CN109375087A - A kind of protection circuit and method with high speed detection IGBT short trouble - Google Patents

A kind of protection circuit and method with high speed detection IGBT short trouble Download PDF

Info

Publication number
CN109375087A
CN109375087A CN201811184831.3A CN201811184831A CN109375087A CN 109375087 A CN109375087 A CN 109375087A CN 201811184831 A CN201811184831 A CN 201811184831A CN 109375087 A CN109375087 A CN 109375087A
Authority
CN
China
Prior art keywords
circuit
short
igbt
grid
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811184831.3A
Other languages
Chinese (zh)
Other versions
CN109375087B (en
Inventor
席伟
刘忠超
张雨
张永浩
徐磊
廖良闯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lianyungang Jierui Electronics Co Ltd
Original Assignee
Lianyungang Jierui Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lianyungang Jierui Electronics Co Ltd filed Critical Lianyungang Jierui Electronics Co Ltd
Priority to CN201811184831.3A priority Critical patent/CN109375087B/en
Publication of CN109375087A publication Critical patent/CN109375087A/en
Application granted granted Critical
Publication of CN109375087B publication Critical patent/CN109375087B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

The present invention is a kind of protection circuit with high speed detection IGBT short trouble, including detection control circuit, HSF short-circuit detecting circuit, FUL short-circuit detecting circuit, or gate logic circuit, gate driving circuit, soft breaking circuit and grid resistance RG.The invention also discloses the methods that a kind of pair of IGBT short trouble is protected.The present invention detects respectively to hard switching short trouble and with two kinds of short-circuit-types of short trouble are carried, and proposes corresponding detection circuit, and is provided with detection control circuit, controls the working condition of short-circuit detecting circuit；Soft breaking circuit carries out short-circuit shutdown processing to IGBT, while locking to the output signal of driving circuit.The present invention is to grid voltage VGEWith driving voltage VGGIt is detected, detection circuit is simple, and the short-circuit detecting time is short, can handle fast and reliablely short trouble, be effectively protected power device.

Description

A kind of protection circuit and method with high speed detection IGBT short trouble
Technical field
The invention belongs to device for power switching to drive protection field, and in particular to a kind of to use IGBT as power switch device The short-circuit protection method and its circuit of part.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has on-state pressure It reduces, the big advantage of current capacity, high with more input impedance, fast response time controls simple advantage, therefore since appearance Since develop very rapidly, be widely used in power electronic equipment.However it is easy to happen when power device IGBT application Various failures, wherein IGBT short trouble is one of most common failure.Under normal conditions, IGBT short trouble can be divided into two Class, hard switching short trouble (HSF, Hard Switching Fault) and with carry short trouble (FUL, Fault Under Load), hard switching short trouble refers to occurs short circuit in IGBT opening process, and when IGBT conducting, impedance loop is fairly small. Band carries short trouble and refers to that IGBT has been opened into after stablizing on state, and short circuit occurs for load.When short circuit occurs for IGBT Afterwards, device current increases rapidly, and can reach 5 ~ 10 times under normal circumstances, a large amount of heat is generated, more than the trouble free service of device Area, since the short-circuit withstanding time of power device IGBT is very short, in case of short circuit, power device IGBT can be in the very short time Interior failure, thus it is most important to quickly detecting and protect for the short trouble of IGBT.
To the short-circuit protection of IGBT, there are many schemes.In the prior art, IGBT is carried out using series resistance detection technique Short-circuit detecting: short-circuit detecting circuit is by a detection resistance RSHUNT, filter resistance RF, filter capacitor CFWith comparator CMPT1 group At passing through detection resistance RSHUNTOn pressure drop come whether decision circuitry occurs short circuit, it is generally recognized that flow through RSHUNTThe electric current of resistance Determine that short circuit occurs for IGBT when reaching 1.7 times of normal current, by the way that detection resistance R is arrangedSHUNTResistance value so that electric at this time Hinder RSHUNTVoltage reach short-circuit protection reference threshold VREFT1, comparator CMPT1 exports high level, and then controls NMOS tube M1 Conducting, turns off IGBT.Intelligent power module (the Smart Power of external Fairchild Semiconductor design Module, SPM) this method is generallyd use, the disadvantages of the method are as follows resistor detection method needs isolation circuit, and introduce miscellaneous Inductance is dissipated, instantaneous detection accuracy and response performance are bad, and detection resistance needs to be connected on main power high-tension circuit, destroy master The compactedness of circuit structure is lost also bigger.
A kind of use is also disclosed in the prior art and moves back saturation detection method to IGBT progress short-circuit protection, which does not break Bad main circuit structure compactedness: moving back saturation detection circuit mainly includes a high-voltage diode DS, resistance RS, delay circuit 1, prolong When circuit 2, comparator CMPT2 and NMOS tube M2.The collector of IGBT is connected to a high voltage bearing diode cathode, it is right The saturation behavior of moving back of IGBT is detected.When IGBT is under normal operating conditions, IGBT works in saturation region, IGBT current collection Pole tension is very low, at this time diode DSIn forward conduction state, diode DSAnode voltage is lower than reference threshold voltage VREFT2, When short trouble occurs for IGBT, IGBT collector current is risen rapidly, and IGBT exits into active area, collector by saturation region Voltage rises very rapidly up to busbar voltage, and the voltage of diode anode is also with raising, when its voltage is greater than reference threshold VREFT2When, Then think that IGBT short trouble occurs, then IGBT is protected, the effect of delay circuit 1 is to guarantee that IGBT can be led completely Logical, so that collector emitter voltage drops to saturation voltage drop, the effect of delay circuit 2 was carried out to the noise signal in work Filter.The shortcomings that short-circuit detecting and protection scheme is: circuit is not isolated with power stage first, is easy to happen error detection, The secondary presence due to delay circuit 1, the circuit need the blanking time of 1 ~ 5us, and detection circuit can just detect short trouble, because This cannot be used for quickly detecting HSF short trouble, and the short-circuit detecting time is longer, increase the risk of IGBT damage.
Also disclose in the prior art it is a kind of using gate charge detection method to IGBT carry out short-circuit protection, this method Detection short trouble speed quickly, additionally due to detection circuit in this method and main high current power stage circuit point It opens, therefore the working characteristics of power device is smaller by being influenced.Its detection circuit includes a gate charge sensor circuit With a comparator CMPT3, detection circuit gives driving circuit offer feedback signal after detecting short trouble.Gate charge induction Circuit output voltage VQGRepresent the variation of gate charge, reference voltage VREFT3It is and grid voltage VGERelevant amount, IGBT is just Often when work, voltage VQGHigher than reference voltage VREFT3, when short circuit occurs for IGBT, voltage VQGLower than reference voltage VREFT3, this method The shortcomings that be: one is that gate charge measurement circuit design difficulty is big, the other is the gate charge of small-power grade IGBT becomes Change amount is small, it is not easy to distinguish.
Summary of the invention
The technical problem to be solved by the present invention is to places in view of the shortcomings of the prior art, provide a kind of with high speed Guard method and the circuit of IGBT short trouble are detected, the program passes through the grid voltage V of IGBTGEWith driving voltage VGGDetection, Judge whether IGBT occurs HSF short trouble and FUL short trouble respectively, circuit is simple, and detection time is short, and it is short to solve IGBT The integrity problem of road protection.
Another technical problem to be solved by this invention carries out short circuit event using aforementioned protection circuit there is provided a kind of Hinder the method for protection.
The technical problem to be solved by the present invention is to what is realized by technical solution below.The present invention is that one kind has The protection circuit of high speed detection IGBT short trouble, its main feature is that: including detecting control circuit, HSF short-circuit detecting circuit, FUL Short-circuit detecting circuit, or gate logic circuit, gate driving circuit, soft breaking circuit and grid resistance RG；
The output V of gate driving circuitGGConnect grid resistance RGOne end, grid resistance RGThe other end connect power device The grid of IGBT detects control circuit to grid voltage VGEProcessing, output detection control signal VCPControl HSF short-circuit detecting electricity Road and the work of FUL short-circuit detecting circuit, the input terminal of HSF short-circuit detecting circuit connect VGGAnd VGE, HSF short-circuit detecting circuit is defeated HSF short-circuit signal V outSC1As an input terminal of or gate logic circuit, the input terminal of FUL short-circuit detecting circuit connects VGGWith VGE, FUL short-circuit detecting circuit output FUL short-circuit signal VSC2Another input terminal or gate logic electricity as or gate logic circuit Road output short-circuit signal VSCAs the input control end of soft breaking circuit, soft breaking circuit carries out soft switching processing to IGBT, and Export locking signal VSTTo gate driving circuit.
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: the HSF short-circuit detecting circuit includes: PMOS tube MP1, resistance R1, capacitor C1, comparator CMP1, The source electrode connection driving circuit of PMOS tube MP1 exports VGG, the grid of the grid connection IGBT of PMOS tube, the drain electrode connection of PMOS tube One end of resistance R1, one end V of the other end connection capacitor C1 of resistance R1C1, the other end ground connection of capacitor C1, comparator CMP1's Positive input meets reference voltage VREF2, one end V of the negative input connection capacitor C1 of comparator CMP1C1, comparator CMP1 Control terminal connection grid control circuit output VCP, the output signal V of comparator CMP1SC1Output as HSF short-circuit detecting Signal.
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: the FUL short-circuit detecting circuit includes: PMOS tube MP2, resistance R2, capacitor C2 and comparator CMP2, The grid of the source electrode connection IGBT of PMOS tube MP2, the output V of the grid connection driving circuit of PMOS tubeGG, the drain electrode company of PMOS tube One end of connecting resistance R2, one end V of the other end connection capacitor C2 of R2C2, the other end ground connection of capacitor C2, comparator CMP2's is negative Reference voltage V is terminated to inputREF3, one end V of the positive input connection capacitor C2 of comparator CMP2C2, comparator CMP2's The output V of control terminal connection grid control circuitCP, comparator CMP2 output signal VSC2Output as FUL short-circuit detecting circuit Signal.
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: the gate driving circuit includes: Schmidt trigger SMT1, phase inverter INV1, NAND gate NAND1 and door AND1, buffer circuit BUF1 and BUF2, PMOS tube MP3, NMOS tube MN1 and MN2, resistance RD；Schmidt's is defeated Enter input V of the end as driving circuitIN, short-circuit signal VSCThe grid of NMOS tube MN1 is connected, the output of Schmidt trigger connects Meet the input terminal of an input terminal and phase inverter INV1 of NAND gate NAND1, output end connection and the door AND1 of phase inverter INV1 An input terminal, resistance RDOne end connect power supply VCC with the source electrode of PMOS tube MP3, the source of NMOS tube MN1 and MN2 connect It is grounded GND, resistance RDThe other end, the drain electrode of NMOS tube MN1, another input terminal of NAND gate NAND1 and with door AND1's Another input terminal links together, the input terminal of the output end connection buffer BUF1 of NAND gate NAND1, defeated with door AND1 Outlet connects the input terminal of buffer BUF2, the grid of the output end connection PMOS tube MP3 of BUF1, the output end connection of BUF2 The grid of NMOS tube MN2, the drain electrode of PMOS tube MP3 and the drain electrode of NMOS tube MN2 are connected together as the output of driving circuit VGG。
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: the soft breaking circuit include: Schmidt trigger SMT2, NMOS tube MN3 and MN4, resistance R3 and RSOFT, capacitor CGWith C3, diode D1 and D2, Zener voltage-stabiliser tube Z1；The anode and resistance R of diode D1SOFTOne end connect function The source electrode of the grid of rate device IGBT, NMOS tube MN3, MN4 connects ground terminal GND, the grid of NMOS tube MN3 with one end of capacitor C3 The cathode of pole, one end of resistance R3 and diode D2 links together, the input terminal V as soft breaking circuitSC, diode D1's Cathode and capacitor CGOne end, Zener voltage-stabiliser tube Z1 cathode link together, capacitor CGThe other end, Zener voltage-stabiliser tube sun The drain electrode of pole and NMOS tube MN3 links together, the anode of diode D2, the other end of resistance R3, capacitor C3 the other end and The input terminal of Schmidt trigger SMT2 links together, and the grid of the output end connection NMOS tube MN4 of Schmidt trigger connects It is connected together, the drain electrode of NMOS tube MN4 and resistance RSOFTThe other end link together.
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: the detection control circuit input signal is the grid voltage V of power deviceGE, detect control circuit Output signal VCPWhether control HSF short-circuit detecting circuit and FUL short-circuit detecting circuit work normally, as grid voltage VGEReach Reference threshold VREF1When, which exports VCPFor high level, HSF short-circuit detecting circuit and FUL short-circuit detecting circuit It works normally；As grid voltage VGEFor lower than reference threshold VREF1When, which exports VCPFor low level, HSF is short Alignment detection circuit and FUL short-circuit detecting circuit non-normal working, detection circuit export VSCFor low level.
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: in the HSF short-circuit detecting circuit: in IGBT in turn on process, if (VGG-VGE) it is higher than PMOS The conduction threshold of pipe MP1 | VTH1| when, PMOS tube MP1 conducting, driving voltage VGGCapacitor C1 is given by PMOS tube MP1 and resistance R1 Charging, in IGBT shutdown, using the body diode characteristic of PMOS tube, capacitor C1 passes through the body two of resistance R1 and PMOS tube MP1 Pole pipe electric discharge.
Protection circuit of the present invention with high speed detection IGBT short trouble, further preferred technical solution Or technical characteristic is: in the FUL short-circuit detecting circuit: IGBT after switch, if (VGE-VGG) it is higher than PMOS tube The conduction threshold of MP2 | VTH2| when, PMOS tube MP2 conducting, driving voltage VGGIt is filled by PMOS tube MP2 and resistance R2 to capacitor C2 Electricity, in IGBT shutdown, using the body diode characteristic of PMOS tube, capacitor C2 passes through two pole of body of resistance R2 and PMOS tube MP2 Tube discharge.
The present invention has in the protection circuit solutions of high speed detection IGBT short trouble, the reference voltage VREF1、VREF2And VREF3It is provided by chip interior reference circuit.
The present invention also provides the methods that a kind of pair of IGBT short trouble is protected, its main feature is that: this method use with Protection circuit described in any one of upper technical solution with high speed detection IGBT short trouble realizes IGBT short trouble Protection；This method is the gate drive voltage V according to IGBTGGWith grid voltage VGEIn normally process and short trouble Different characteristics state judge whether IGBT occurs HSF short trouble and FUL short trouble；Short-circuit detecting circuit is first to grid Pole tension VGEIt is detected, as grid voltage VGEWhen higher than given threshold, start HSF short-circuit detecting and FUL short-circuit detecting, if It does not detect short trouble, then illustrates that IGBT is in normal operating conditions；If detecting short trouble, IGBT is carried out soft Shutdown handles while locking grid, finally turns off IGBT.
The method that above-described a kind of pair of IGBT short trouble is protected, further preferred technical solution is:
When detecting that short trouble occurs for IGBT, short-circuit signal VSCWhen for high level, NMOS tube MN1 is in the conductive state, NMOS tube MN1 drain voltage be low level, i.e. NAND gate NAND1 input terminal X2 and with door AND1 input terminal X4 be low level, then The output end of NAND gate NAND1 is high level, and the output end with door AND1 is low level, and PMOS tube MP3 and NMOS tube MN2 are in Off state, grid input signal VGGNot by input signal VINInfluence；
When IGBT generation short trouble is not detected, short-circuit signal VSCFor low level, NMOS tube MN1 is in close state, NMOS tube MN4 drain voltage be high level, NAND gate NAND1 input terminal X2 and with door AND1 input terminal X4 be high level, then with The output end of NOT gate NAND1 and with the output end of door AND1 by input signal VINControl, work as VINWhen for high level, grid is driven Dynamic output VGGFor high level, work as VINWhen for low level, gate driving exports VGGFor low level；
When short trouble occurs for IGBT, short-circuit signal VSC is high level, and NMOS tube MN3 is in the conductive state, Zener diode Z1 breakdown, grid voltage VSC rapidly drop to a lower voltage, which is higher than the conducting voltage of IGBT, reduce IGBT and hold The short circuit current received improves the short-circuit withstanding time of IGBT, short-circuit signal VSCIt is exported after capacitor C3 and resistance R1 delay VSCT, VSCTV is exported after Schmidt trigger SMT2 shapingSOFT, VSOFTNMOS tube MN4 conducting is controlled, IGBT passes through resistance RSOFTIt is slowly turned off with NMOS tube MN4.
Compared with prior art, advantages of the present invention is as follows:
(1) present invention is the gate drive voltage V to IGBTGGWith grid voltage VGEIt is detected, wink is connected in detection power device State state, detection circuit is simple, and the short-circuit detecting time is short, can handle short trouble, effectively protect fast and reliablely Protect power device.
(2) present invention without introducing high tension apparatus, be isolated with power circuit by protection circuit, low in energy consumption, is easily integrated；
(3) present invention examines respectively to hard switching short trouble (HSF) and with short trouble (FUL) two kinds of short-circuit-types are carried It surveys, proposes corresponding detection circuit, and be provided with detection control circuit, control the working condition of short-circuit detecting circuit；Soft pass Deenergizing carries out short-circuit shutdown processing to IGBT, while locking to the output signal of driving circuit.
(4) present invention separately designs detection circuit to two kinds of short troubles of IGBT, is examined compared to existing based on gate charge Survey method, implementing circuit is simple, and parameter is easy to set up, high reliablity.
Detailed description of the invention
Fig. 1 be IGBT in normally and occur HSF short-circuit conditions under gate drive voltage VGGAnd grid voltage VGEThe comparison diagram changed over time；
Fig. 2 be IGBT in normally and occur FUL short-circuit conditions under gate drive voltage VGGWith grid voltage VGEWith The comparison diagram of time change；
Fig. 3 is a kind of circuit diagram of the invention；
Fig. 4 is gate driving circuit schematic diagram；
Fig. 5 is soft breaking circuit schematic diagram；
Fig. 6 is the operation schematic diagram for detecting control circuit in the work of IGBT normally；
Fig. 7 is to detect control circuit the operation schematic diagram under HSF short-circuit conditions occurs in IGBT；
Fig. 8 is to detect control circuit the operation schematic diagram under FUL short-circuit conditions occurs in IGBT；
Fig. 9 is IGBT short-circuit protection method flow diagram.
Specific embodiment:
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the example lifted is served only for explaining the present invention, not For limiting the scope of the invention.
As shown in Figure 1, IGBT in normally and occur HSF short-circuit conditions under gate drive voltage VGGAnd grid Voltage VGEThe comparison diagram changed over time, wherein dotted portion gate drive voltage VGGWith the curve graph of time change, solid line Part is grid VGEThe relational graph changed over time.
As shown in Figure 1, for IGBT in normally, grid voltage has a Muller platform during rising Stage, at this time gate drive voltage VGGWith grid voltage VGEIt differs greatly, and the gate driving electricity when HSF short circuit occurs for IGBT Press VGGWith grid voltage VGEDirect fast linear rises to supply voltage VCC, gate drive voltage VGGWith grid voltage VGEValue Be closer to, comparison discovery, IGBT occur the gate charges time under HSF short-circuit conditions than it is normally-open when gate charges when Between short, while the difference of gate drive voltage and grid voltage | VGG-VGE| normally situation process value more than occur HSF Value under short-circuit conditions wants high, using the characteristic, by the grid voltage V for detecting IGBTGEWith gate drive voltage VGGTo judge Whether IGBT occurs HSF short trouble.
As shown in Fig. 2, IGBT in normally and occur FUL short-circuit conditions under gate drive voltage VGGAnd grid Voltage VGEThe comparison diagram changed over time, wherein dotted portion gate drive voltage VGGWith the curve graph of time change, solid line Part is grid VGEThe relational graph changed over time.IGBT is in the case where occurring FUL short-circuit conditions, collector current ICIt increases sharply, And then collector emitter voltage VCEAlso it increases sharply, due to thisdv/dtInfluence, grid voltage VGEAlso it will increase, grid electricity Press VGEThere is a big overshoot, overshoot voltage size and grid resistance R at this timeGIt is related, it is 15V, without grid in supply voltage In the case where the clamp circuit of pole, grid voltage can be up to 25V, be higher than supply voltage VCC.Therefore it was connected by detecting IGBT Gate voltage overshoot in journey can judge whether IGBT occurs FUL short trouble.
As shown in figure 3, a kind of protection circuit with high speed detection IGBT short trouble, including detection control circuit 001, HSF short-circuit detecting circuit 002, FUL short-circuit detecting circuit 003, or gate logic circuit 004, gate driving circuit 005, soft switching Circuit 006 and grid resistance RG, the output V of gate driving circuit 005GGConnect grid resistance RGOne end, grid resistance RGIt is another One end connects the grid of power device IGBT, detects control circuit 001 to grid voltage VGEProcessing, output detection control signal VCPIt controls HSF short-circuit detecting circuit 002 and FUL short-circuit detecting circuit 003 works, the input terminal of HSF short-circuit detecting circuit 002 connects Meet VGGAnd VGE, the output of HSF short-circuit detecting circuit 002 HSF short-circuit signal VSC1An input as or gate logic circuit 004 The input terminal at end, FUL short-circuit detecting circuit 003 connects VGGAnd VGE, the output of FUL short-circuit detecting circuit 003 FUL short-circuit signal VSC2 As another input terminal of or gate logic circuit 004, or gate logic circuit (004) output short-circuit signal VSCAs soft switching electricity The input control end on road 006, soft breaking circuit 006 carries out soft switching processing to IGBT, and exports locking signal VSTIt is driven to grid Dynamic circuit 005.
HSF short-circuit detecting circuit includes PMOS tube MP1, resistance R1, capacitor C1, comparator CMP1, the source electrode of PMOS tube MP1 It connects driving circuit and exports VGG, the grid of the grid connection IGBT of PMOS tube, one end of the drain electrode connection resistance R1 of PMOS tube, electricity Hinder one end V of the other end connection capacitor C1 of R1C1, the other end ground connection of capacitor C1, the positive input of comparator CMP1 connects ginseng Examine voltage VREF2, one end V of the negative input connection capacitor C1 of comparator CMP1C1, the control terminal connection grid of comparator CMP1 The output V of pole control circuitCP, the output signal V of comparator CMP1SC1Output signal as HSF short-circuit detecting；
FUL short-circuit detecting circuit includes PMOS tube MP2, resistance R2, capacitor C2, comparator CMP2, the source electrode connection of PMOS tube MP2 The grid of IGBT, the output V of the grid connection driving circuit of PMOS tubeGG, one end of the drain electrode connection resistance R2 of PMOS tube, R2's One end V of other end connection capacitor C2C2, the other end ground connection of capacitor C2, the positive input of comparator CMP2 connects reference voltage VREF3, one end V of the negative input connection capacitor C2 of comparator CMP2C2, the control terminal connection grid control of comparator CMP2 The output V of circuitCP, comparator CMP2 output signal VSC2Output signal as FUL short-circuit detecting circuit；
Protection circuit with high speed detection IGBT short trouble includes two detection circuits, and one is the detection of HSF short trouble Circuit, the other is FUL short trouble detection circuit, according to the gate drive voltage V of IGBTGGWith grid voltage VGENormal Different characteristics state in turn on process and short trouble judges whether IGBT occurs HSF short trouble and FUL short trouble.
When IGBT is worked normally, specific works waveform diagram is as shown in fig. 6, when IGBT is normally opened, the grid of IGBT Pole tension has a platform phase, at this time grid voltage VGELower than driving voltage VGG, as shown in figure 1t 1-t 2Period, PMOS Pipe MP1 is connected, at this time grid voltage VGEIt is charged by resistance R1 to capacitor C1, the voltage on capacitor is gradually raised, when grid electricity Press VGEHigher than reference threshold VREF1When, comparator CMP1 is worked normally, and capacitor C1 is after overcharge at this time, voltage VC1Higher than reference Threshold value VREF2, comparator output voltage VSC1For low level, after IGBT is fully on, the grid voltage V of IGBTGEEqual to driving Voltage VGG, PMOS tube MP2 cut-off, therefore the voltage on capacitor C2 is always low level, comparator CMP2 exports VSC2For low electricity It is flat, therefore short-circuit detecting circuit output signal VSCFor low level.When IGBT shutdown, grid voltage VGGAnd VGEFor low level, PMOS tube MP1 and MP2 are equal to GGMOS device, and capacitor C1 is discharged by the body diode of R1 and MP1, and capacitor C2 passes through resistance The body diode of R2 and MP2 discharges.
When HSF short circuit occurs for IGBT, specific works waveform diagram is as shown in fig. 7, IGBT grid voltage and grid drive Dynamic voltage VGGRapid linear rise is to supply voltage VCC, in IGBT turn on process, grid voltage VGEWith driving voltage VGGIt connects Closely, simultaneously because IGBT turn-on time is short under short-circuit conditions, therefore grid voltage VGGBy resistance R1 to the charging electricity of capacitor C1 Lotus is more much smaller than in the case of normally, the voltage V on capacitorC1It is very low, it is lower than given threshold VREF2, therefore, work as grid voltage VGEReach given threshold VREF1, comparator CMP1 normal work, comparator CMP1 output VSC1For high level, short-circuit detecting circuit Export VSCHigh level is exported, detects that short trouble occurs for IGBT.
When FUL short circuit occurs for IGBT, specific works waveform diagram is as shown in figure 8, Fig. 2'st 3Moment, IGBT hair Life is short-circuit, at this time grid voltage VGEHigher than gate drive voltage VGG, there is a grid overshoot stage, with reference to Fig. 2'st 3-t 4, PMOS tube MP2 conducting, therefore grid voltage VGGIt is charged by resistance R2 to capacitor C2, the voltage V on capacitorC2Gradually raise, it is high In given threshold VREF3, meanwhile, grid voltage VGEHigher than given threshold VREF1, comparator CMP2 normal work, comparator CMP2 Export VSC2For high level, short-circuit detecting circuit exports VSCHigh level is exported, detects that short trouble occurs for IGBT.
Gate driving circuit figure is as shown in Figure 4.Gate driving circuit include Schmidt trigger SMT1, phase inverter INV1, NAND gate NAND1 and door AND1, buffer circuit BUF1 and BUF2, PMOS tube MP3, NMOS tube MN1 and MN2, resistance RD.Shi Mi Input V of the special input terminal as driving circuitIN, short-circuit signal VSCThe grid of NMOS tube MN1 is connected, Schmidt trigger Output connection NAND gate NAND1 an input terminal and phase inverter INV1 input terminal, phase inverter INV1 output end connection with An input terminal of door AND1, resistance RDOne end power supply VCC is connected with the source electrode of PMOS tube MP3, NMOS tube MN1's and MN2 Source connection ground GND, resistance RDThe other end, the drain electrode of NMOS tube MN1, another input terminal of NAND gate NAND1 and with door Another input terminal of AND1 links together, the input terminal of the output end connection buffer BUF1 of NAND gate NAND1, with door The input terminal of the output end connection buffer BUF2 of AND1, the grid of the output end connection PMOS tube MP3 of BUF1, the output of BUF2 The grid of end connection NMOS tube MN2, the drain electrode of PMOS tube MP3 and the drain electrode of NMOS tube MN2 are connected together as driving circuit Output VGG。
When detecting that short trouble occurs for IGBT, short-circuit signal VSCWhen for high level, NMOS tube MN1 is on shape State, NMOS tube MN1 drain voltage be low level, i.e. NAND gate NAND1 input terminal X2 and with door AND1 input terminal X4 be low level, Then the output end of NAND gate NAND1 is high level, is low level with the output end of door AND1, at PMOS tube MP3 and NMOS tube MN2 In off state, grid input signal VGGNot by input signal VINInfluence.When IGBT generation short trouble is not detected, Short-circuit signal VSCFor low level, NMOS tube MN1 is in close state, and NMOS tube MN4 drain voltage is high level, NAND gate NAND1 input terminal X2 and with door AND1 input terminal X4 be high level, then the output end of NAND gate NAND1 and the output with door AND1 End is by input signal VINControl, analyze it is found that working as VINWhen for high level, gate driving exports VGGFor high level, work as VINIt is low When level, gate driving exports VGGFor low level.
Soft breaking circuit figure as shown in figure 5, soft breaking circuit include Schmidt trigger SMT2, NMOS tube MN3 and MN4, Resistance R3 and RSOFT, capacitor CGWith C3, diode D1 and D2, Zener voltage-stabiliser tube Z1.The anode and resistance R of diode D1SOFTOne The grid of end connection power device IGBT, the source electrode of NMOS tube MN3, MN4 connect ground terminal GND, NMOS tube with one end of capacitor C3 The cathode of the grid of MN3, one end of resistance R3 and diode D2 links together, the input terminal V as soft breaking circuitSC, two The cathode and capacitor C of pole pipe D1GOne end, Zener voltage-stabiliser tube Z1 cathode link together, capacitor CGThe other end, Zener it is steady The drain electrode of the anode and NMOS tube MN3 of pressure pipe links together, the anode of diode D2, the other end of resistance R3, capacitor C3 The input terminal of the other end and Schmidt trigger SMT2 link together, and the output end of Schmidt trigger connects NMOS tube MN4 Grid link together, the drain electrode of NMOS tube MN4 and resistance RSOFTThe other end link together.
When short trouble occurs for IGBT, short-circuit detecting circuit output signal VSC is high level, and NMOS tube MN3 is in and leads Logical state, Zener diode Z1 breakdown, grid voltage VSC rapidly drop to a lower voltage, which leads higher than IGBT's Be powered pressure, reduces the short circuit current that IGBT is born, improves the short-circuit withstanding time of IGBT, short-circuit signal VSCBy capacitor C3 and electricity V is exported after resistance R1 delaySCT, VSCTV is exported after Schmidt trigger SMT2 shapingSOFT, VSOFTNMOS tube MN4 conducting is controlled, IGBT passes through resistance RSOFTIt is slowly turned off with NMOS tube MN4.
Circuit shown in Fig. 3 to IGBT carry out short-circuit protection method flow diagram as shown in figure 9, when driver work when, Short-circuit detecting circuit is first to grid voltage VGEIt is detected, as grid voltage VGEWhen higher than given threshold, starting HSF short circuit Detection and FUL short-circuit detecting illustrate that IGBT is in normal operating conditions if not detecting short trouble.If detecting short Road failure then carries out soft switching processing to IGBT while locking grid, finally turns off IGBT, which is based on to IGBT Grid voltage V in turn on processGEWith gate drive voltage VGGDetection and design, therefore detection time is short, and detection time is small In 300ns, the soft switching time is less than 400ns, and total short-circuit response time is less than 700ns.
The foregoing is merely preferred embodiments of the invention, however it is not limited to the present invention, for those skilled in the art For, the present invention can have various modifications and variations.All within the spirits and principles of the present invention, any modification for being made, equivalent Replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of protection circuit with high speed detection IGBT short trouble, it is characterised in that: including detecting control circuit, HSF Short-circuit detecting circuit, FUL short-circuit detecting circuit, or gate logic circuit, gate driving circuit, soft breaking circuit and grid resistance RG；
The output V of gate driving circuitGGConnect grid resistance RGOne end, grid resistance RGThe other end connect power device The grid of IGBT detects control circuit to grid voltage VGEProcessing, output detection control signal VCPControl HSF short-circuit detecting electricity Road and the work of FUL short-circuit detecting circuit, the input terminal of HSF short-circuit detecting circuit connect VGGAnd VGE, HSF short-circuit detecting circuit is defeated HSF short-circuit signal V outSC1As an input terminal of or gate logic circuit, the input terminal of FUL short-circuit detecting circuit connects VGGWith VGE, FUL short-circuit detecting circuit output FUL short-circuit signal VSC2Another input terminal or gate logic electricity as or gate logic circuit Road output short-circuit signal VSCAs the input control end of soft breaking circuit, soft breaking circuit carries out soft switching processing to IGBT, and Export locking signal VSTTo gate driving circuit.
2. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described HSF short-circuit detecting circuit includes: PMOS tube MP1, resistance R1, capacitor C1, comparator CMP1, and the source electrode of PMOS tube MP1, which connects, to be driven Dynamic circuit output VGG, the grid of the grid connection IGBT of PMOS tube, one end of the drain electrode connection resistance R1 of PMOS tube, resistance R1's One end V of other end connection capacitor C1C1, the other end ground connection of capacitor C1, the positive input of comparator CMP1 connects reference voltage VREF2, one end V of the negative input connection capacitor C1 of comparator CMP1C1, the control terminal connection grid control of comparator CMP1 The output V of circuitCP, the output signal V of comparator CMP1SC1Output signal as HSF short-circuit detecting.
3. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described FUL short-circuit detecting circuit includes: PMOS tube MP2, resistance R2, capacitor C2 and comparator CMP2, the source electrode connection of PMOS tube MP2 The grid of IGBT, the output V of the grid connection driving circuit of PMOS tubeGG, one end of the drain electrode connection resistance R2 of PMOS tube, R2's One end V of other end connection capacitor C2C2, the other end ground connection of capacitor C2, the negative input of comparator CMP2 connects reference voltage VREF3, one end V of the positive input connection capacitor C2 of comparator CMP2C2, the control terminal connection grid control of comparator CMP2 The output V of circuitCP, comparator CMP2 output signal VSC2Output signal as FUL short-circuit detecting circuit.
4. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described Gate driving circuit includes: Schmidt trigger SMT1, phase inverter INV1, NAND gate NAND1 and door AND1, buffer circuit BUF1 and BUF2, PMOS tube MP3, NMOS tube MN1 and MN2, resistance RD；Input of the input terminal of Schmidt as driving circuit VIN, short-circuit signal VSCConnect the grid of NMOS tube MN1, an input of the output connection NAND gate NAND1 of Schmidt trigger The input terminal at end and phase inverter INV1, an input terminal of the output end connection and door AND1 of phase inverter INV1, resistance RDOne End connects power supply VCC with the source electrode of PMOS tube MP3, and NMOS tube MN1 connects ground GND, resistance R with the source of MN2DThe other end, It the drain electrode of NMOS tube MN1, another input terminal of NAND gate NAND1 and links together with another input terminal of door AND1, The input terminal of the output end connection buffer BUF1 of NAND gate NAND1, connect the defeated of buffer BUF2 with the output end of door AND1 Enter end, the grid of the output end connection PMOS tube MP3 of BUF1, the grid of the output end connection NMOS tube MN2 of BUF2, PMOS tube The drain electrode of MP3 and the drain electrode of NMOS tube MN2 are connected together as the output V of driving circuitGG。
5. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described Soft breaking circuit includes: Schmidt trigger SMT2, NMOS tube MN3 and MN4, resistance R3 and RSOFT, capacitor CGWith C3, diode D1 and D2, Zener voltage-stabiliser tube Z1；The anode and resistance R of diode D1SOFTOne end connection power device IGBT grid, NMOS The source electrode of pipe MN3, MN4 connect ground terminal GND, the grid of NMOS tube MN3, one end of resistance R3 and diode with one end of capacitor C3 The cathode of D2 links together, the input terminal V as soft breaking circuitSC, the cathode and capacitor C of diode D1GOne end, Zener The cathode of voltage-stabiliser tube Z1 links together, capacitor CGThe other end, Zener voltage-stabiliser tube anode connected with the drain electrode of NMOS tube MN3 Together, the input terminal of the anode of diode D2, the other end of resistance R3, the other end of capacitor C3 and Schmidt trigger SMT2 It links together, the grid of the output end connection NMOS tube MN4 of Schmidt trigger links together, the drain electrode of NMOS tube MN4 With resistance RSOFTThe other end link together.
6. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described Detect the grid voltage V that control circuit input signal is power deviceGE, detect control circuit output signal VCPControl HSF short circuit Whether detection circuit and FUL short-circuit detecting circuit work normally, as grid voltage VGEReach reference threshold VREF1When, the detection control Circuit output V processedCPFor high level, HSF short-circuit detecting circuit and FUL short-circuit detecting circuit are worked normally；As grid voltage VGEFor Lower than reference threshold VREF1When, which exports VCPFor low level, HSF short-circuit detecting circuit and FUL short-circuit detecting Circuit non-normal working, detection circuit export VSCFor low level.
7. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described In HSF short-circuit detecting circuit: in IGBT in turn on process, if (VGG-VGE) it is higher than the conduction threshold of PMOS tube MP1 | VTH1| When, PMOS tube MP1 conducting, driving voltage VGGIt is charged by PMOS tube MP1 and resistance R1 to capacitor C1, in IGBT shutdown, benefit With the body diode characteristic of PMOS tube, capacitor C1 is discharged by the body diode of resistance R1 and PMOS tube MP1.
8. the protection circuit according to claim 1 with high speed detection IGBT short trouble, it is characterised in that: described In FUL short-circuit detecting circuit: IGBT after switch, if (VGE-VGG) it is higher than the conduction threshold of PMOS tube MP2 | VTH2| when, PMOS tube MP2 conducting, driving voltage VGGIt is charged by PMOS tube MP2 and resistance R2 to capacitor C2, in IGBT shutdown, is utilized The body diode characteristic of PMOS tube, capacitor C2 are discharged by the body diode of resistance R2 and PMOS tube MP2.
9. the method that a kind of pair of IGBT short trouble is protected, it is characterised in that: this method is appointed using in claim 1-8 Protection circuit described in what one with high speed detection IGBT short trouble realizes the protection of IGBT short trouble；This method is root According to the gate drive voltage V of IGBTGGWith grid voltage VGEDifferent characteristics state in normally process and short trouble is come Judge whether IGBT occurs HSF short trouble and FUL short trouble；Short-circuit detecting circuit is first to grid voltage VGEIt is examined It surveys, as grid voltage VGEWhen higher than given threshold, start HSF short-circuit detecting and FUL short-circuit detecting, if not detecting short-circuit event Barrier, then illustrate that IGBT is in normal operating conditions；If detecting short trouble, soft switching processing is carried out to IGBT while being locked Grid finally turns off IGBT.
10. the method that a kind of pair of IGBT short trouble according to claim 9 is protected, it is characterised in that:
When detecting that short trouble occurs for IGBT, short-circuit signal VSCWhen for high level, NMOS tube MN1 is in the conductive state, NMOS tube MN1 drain voltage be low level, i.e. NAND gate NAND1 input terminal X2 and with door AND1 input terminal X4 be low level, then The output end of NAND gate NAND1 is high level, and the output end with door AND1 is low level, and PMOS tube MP3 and NMOS tube MN2 are in Off state, grid input signal VGGNot by input signal VINInfluence；
When IGBT generation short trouble is not detected, short-circuit signal VSCFor low level, NMOS tube MN1 is in close state, NMOS tube MN4 drain voltage be high level, NAND gate NAND1 input terminal X2 and with door AND1 input terminal X4 be high level, then with The output end of NOT gate NAND1 and with the output end of door AND1 by input signal VINControl, work as VINWhen for high level, grid is driven Dynamic output VGGFor high level, work as VINWhen for low level, gate driving exports VGGFor low level；
When short trouble occurs for IGBT, short-circuit signal VSC is high level, and NMOS tube MN3 is in the conductive state, Zener diode Z1 breakdown, grid voltage VSC rapidly drop to a lower voltage, which is higher than the conducting voltage of IGBT, reduce IGBT and hold The short circuit current received improves the short-circuit withstanding time of IGBT, short-circuit signal VSCIt is exported after capacitor C3 and resistance R1 delay VSCT, VSCTV is exported after Schmidt trigger SMT2 shapingSOFT, VSOFTNMOS tube MN4 conducting is controlled, IGBT passes through resistance RSOFTIt is slowly turned off with NMOS tube MN4.
CN201811184831.3A 2018-10-11 2018-10-11 Protection circuit and method for detecting IGBT short-circuit fault at high speed Active CN109375087B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811184831.3A CN109375087B (en) 2018-10-11 2018-10-11 Protection circuit and method for detecting IGBT short-circuit fault at high speed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811184831.3A CN109375087B (en) 2018-10-11 2018-10-11 Protection circuit and method for detecting IGBT short-circuit fault at high speed

Publications (2)

Publication Number Publication Date
CN109375087A true CN109375087A (en) 2019-02-22
CN109375087B CN109375087B (en) 2021-06-15

Family

ID=65403112

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811184831.3A Active CN109375087B (en) 2018-10-11 2018-10-11 Protection circuit and method for detecting IGBT short-circuit fault at high speed

Country Status (1)

Country Link
CN (1) CN109375087B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110501601A (en) * 2019-09-26 2019-11-26 中国航空工业集团公司西安飞机设计研究所 A kind of determination device and method of solid state power device short-circuit protection time
CN110794285A (en) * 2019-10-18 2020-02-14 淮安中科晶上智能网联研究院有限公司 Full-bridge switching circuit state detection circuit and method
CN111474460A (en) * 2020-05-29 2020-07-31 中煤科工集团重庆研究院有限公司 IGBT grid resistance fault detection system
CN112051494A (en) * 2019-11-28 2020-12-08 长城汽车股份有限公司 Grid electrode detection circuit of insulated gate bipolar transistor
CN112886541A (en) * 2021-03-05 2021-06-01 阳光电源股份有限公司 Converter and IGBT gate drive protection circuit and method
CN113589128A (en) * 2021-08-06 2021-11-02 湖南大学 Short-circuit fault detection method for SiC MOSFET power module
CN113659968A (en) * 2021-06-17 2021-11-16 许继集团有限公司 IGBT two-stage soft turn-off short circuit protection device
CN113904668A (en) * 2021-09-28 2022-01-07 山西大学 Device and method for measuring short-circuit protection static threshold of power switch tube driving circuit
CN117572288A (en) * 2024-01-15 2024-02-20 安徽大学 Short-circuit fault detection circuit and detection method
US12019115B2 (en) 2019-11-28 2024-06-25 Great Wall Motor Company Limited Gate detection circuit of insulated gate bipolar transistor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1236183A (en) * 1998-05-18 1999-11-24 株式会社东芝 Semiconductor element, and its driving method and driving device
JP2004064930A (en) * 2002-07-30 2004-02-26 Mitsubishi Electric Corp Drive circuit for power semiconductor device
US20080212247A1 (en) * 2006-11-21 2008-09-04 Lee Jun-Bae Insulated gate bipolar transistor fault protection system
CN101421910A (en) * 2006-04-06 2009-04-29 三菱电机株式会社 The drive circuit of semiconductor element
CN101471561A (en) * 2007-12-25 2009-07-01 三菱电机株式会社 Failure detection device for power circuit including switching element
CN102157921A (en) * 2011-04-01 2011-08-17 欧瑞传动电气有限公司 Insulated gate bipolar transistor (IGBT) short circuit protection circuit and control method
CN106099864A (en) * 2016-07-19 2016-11-09 东南大学 The short-circuit protection method of a kind of IGBT device for power switching and circuit thereof
CN108508342A (en) * 2018-05-28 2018-09-07 中国科学院上海微系统与信息技术研究所 A kind of IGBT short circuit overcurrents detection circuit

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1236183A (en) * 1998-05-18 1999-11-24 株式会社东芝 Semiconductor element, and its driving method and driving device
JP2004064930A (en) * 2002-07-30 2004-02-26 Mitsubishi Electric Corp Drive circuit for power semiconductor device
CN101421910A (en) * 2006-04-06 2009-04-29 三菱电机株式会社 The drive circuit of semiconductor element
US20080212247A1 (en) * 2006-11-21 2008-09-04 Lee Jun-Bae Insulated gate bipolar transistor fault protection system
CN101471561A (en) * 2007-12-25 2009-07-01 三菱电机株式会社 Failure detection device for power circuit including switching element
CN102157921A (en) * 2011-04-01 2011-08-17 欧瑞传动电气有限公司 Insulated gate bipolar transistor (IGBT) short circuit protection circuit and control method
CN106099864A (en) * 2016-07-19 2016-11-09 东南大学 The short-circuit protection method of a kind of IGBT device for power switching and circuit thereof
CN108508342A (en) * 2018-05-28 2018-09-07 中国科学院上海微系统与信息技术研究所 A kind of IGBT short circuit overcurrents detection circuit

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110501601B (en) * 2019-09-26 2021-10-22 中国航空工业集团公司西安飞机设计研究所 Device and method for determining short-circuit protection time of solid-state power device
CN110501601A (en) * 2019-09-26 2019-11-26 中国航空工业集团公司西安飞机设计研究所 A kind of determination device and method of solid state power device short-circuit protection time
CN110794285A (en) * 2019-10-18 2020-02-14 淮安中科晶上智能网联研究院有限公司 Full-bridge switching circuit state detection circuit and method
CN110794285B (en) * 2019-10-18 2021-06-22 淮安中科晶上智能网联研究院有限公司 Full-bridge switching circuit state detection circuit and method
US12019115B2 (en) 2019-11-28 2024-06-25 Great Wall Motor Company Limited Gate detection circuit of insulated gate bipolar transistor
CN112051494A (en) * 2019-11-28 2020-12-08 长城汽车股份有限公司 Grid electrode detection circuit of insulated gate bipolar transistor
WO2021104297A1 (en) * 2019-11-28 2021-06-03 长城汽车股份有限公司 Gate detection circuit of insulated gate bipolar transistor
CN112051494B (en) * 2019-11-28 2021-07-20 长城汽车股份有限公司 Grid electrode detection circuit of insulated gate bipolar transistor
CN111474460B (en) * 2020-05-29 2022-03-22 中煤科工集团重庆研究院有限公司 IGBT grid resistance fault detection system
CN111474460A (en) * 2020-05-29 2020-07-31 中煤科工集团重庆研究院有限公司 IGBT grid resistance fault detection system
CN112886541A (en) * 2021-03-05 2021-06-01 阳光电源股份有限公司 Converter and IGBT gate drive protection circuit and method
CN112886541B (en) * 2021-03-05 2024-04-12 阳光电源股份有限公司 Protection circuit and method for converter and IGBT gate electrode drive
CN113659968A (en) * 2021-06-17 2021-11-16 许继集团有限公司 IGBT two-stage soft turn-off short circuit protection device
CN113659968B (en) * 2021-06-17 2023-10-20 许继集团有限公司 IGBT two-stage soft turn-off short-circuit protection device
CN113589128A (en) * 2021-08-06 2021-11-02 湖南大学 Short-circuit fault detection method for SiC MOSFET power module
CN113904668A (en) * 2021-09-28 2022-01-07 山西大学 Device and method for measuring short-circuit protection static threshold of power switch tube driving circuit
CN117572288A (en) * 2024-01-15 2024-02-20 安徽大学 Short-circuit fault detection circuit and detection method
CN117572288B (en) * 2024-01-15 2024-04-16 安徽大学 Short-circuit fault detection circuit and detection method

Also Published As

Publication number Publication date
CN109375087B (en) 2021-06-15

Similar Documents

Publication Publication Date Title
CN109375087A (en) A kind of protection circuit and method with high speed detection IGBT short trouble
CN106026621B (en) A kind of band avoids the IGBT drive circuit and detection method of short-circuit protection blind area
CN106099864B (en) A kind of short-circuit protection method and its circuit of IGBT device for power switching
CN110568335B (en) SiC MOSFET short circuit detection protection system and method without detection blind area
CN201266914Y (en) Driver circuit of IGBT
CN1307797C (en) Overvoltage protection circuit of output MOS transistor
CN102263544B (en) IGBT driving circuit with electrification protection
CN102315763B (en) Intelligent power module having soft turn off function
CN105932864B (en) A kind of intelligentized IGBT constant current driving device
CN105577153A (en) Semiconductor device
CN205829455U (en) The IGBT drive circuit of short-circuit protection blind area avoided by a kind of band
CN107394753B (en) A kind of soft switching protection circuit and method for power device
CN102122813A (en) Switch embedded integrated circuit and method for protecting battery
CN109698611A (en) Multistage drop grid voltage type SiC-MOSFET driving circuit
CN110392975B (en) Method and voltage multiplier for converting an input voltage and separating circuit
CN105262468A (en) IGBT protection and drive circuit
CN104218558B (en) Anti-surging high tension protection circuit
CN110289841A (en) A kind of ladder driving circuit
CN202840920U (en) IGBT (insulated gate bipolar transistor) drive circuit
CN103022977B (en) The method of moving back saturation detection protective circuit is controlled in a kind of T font three-level inverter
CN109995350A (en) A kind of driving stage short-circuit protection of power field effect pipe and guard method
CN202930915U (en) Short circuit protection device of frequency converter switch power supply
CN105655974B (en) A kind of electric vehicle motor controller, which is uncapped, protects control method
CN205829454U (en) A kind of intelligentized IGBT constant current driving device
CN109981089B (en) IGBT drive protection system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant