CN109374151A - Temperature sensing circuit - Google Patents
Temperature sensing circuit Download PDFInfo
- Publication number
- CN109374151A CN109374151A CN201811571117.XA CN201811571117A CN109374151A CN 109374151 A CN109374151 A CN 109374151A CN 201811571117 A CN201811571117 A CN 201811571117A CN 109374151 A CN109374151 A CN 109374151A
- Authority
- CN
- China
- Prior art keywords
- module
- connect
- gating
- resistance
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The present invention provides a kind of temperature sensing circuit, comprising: at least two temperature sensor input units；Gating module is connect respectively respectively to export the detectable voltage signals of a temperature sensor input unit at least two temperature sensor input units at least two temperature sensors input unit；Signal amplification module, input terminal are connect with the output end of the gating module, and the detectable voltage signals for exporting gating module are amplified to obtain amplified signal；Integration module is connect with the output end of the signal amplification module to obtain the amplified signal of signal amplification module output, and carry out integral operation to the amplified signal；Voltage comparison module is connected with integration module and is compared with the integral voltage exported after the integral operation by the integration module with predeterminated voltage, and according to comparison result outputs level signals；Central processing module is connect with the voltage comparison module, and the central processing module is used to be calculated the temperature value of corresponding temperature sensor detection according to the level signal that the voltage comparison module exports.
Description
Technical field
The present invention relates to temperature detection fields, and in particular to a kind of temperature sensing circuit.
Background technique
In the prior art, temperature detection is mostly using thermistor come temperature sensor variation, and passes through sensing temperature-sensitive
Ohmically voltage change realizes temperature detection.
But the detection sensitivity of temperature sensing circuit in the prior art is lower, can not detect lesser temperature
Variation, moreover, circuit structure is complicated, higher cost.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The object of the present invention is to provide a kind of temperature sensing circuits, have raising detection accuracy and reduce having for cost
Beneficial effect.
The embodiment of the invention provides a kind of temperature sensing circuits, comprising:
At least two temperature sensor input units are used for cut-in temperature sensor；
Gating module is connect respectively respectively by least two temperature at least two temperature sensors input unit
Spend the detectable voltage signals output of a temperature sensor unit in cell input unit；
Signal amplification module, input terminal are connect with the output end of the gating module, the detection for exporting gating module
Voltage signal amplifies to obtain amplified signal；
Integration module is connect to obtain the amplification of the signal amplification module output with the output end of the signal amplification module
Signal, and integral operation is carried out to the amplified signal；
Voltage comparison module connect the integral voltage to export after the integral operation by the integration module with the integration module
It is compared with predeterminated voltage, and according to comparison result outputs level signals；
Central processing module is connect with the voltage comparison module, and the central processing module is used for according to the voltage ratio
Compared with the temperature value that the detection of corresponding temperature sensor is calculated in the level signal of module output.
In temperature sensing circuit of the present invention, the control terminal of the central processing module and the gating module connects
It connects, to export the detectable voltage signals of corresponding temperature cell input unit to the integral for controlling the gating module
Module.
In temperature sensing circuit of the present invention, the gating module includes the second gating chip and third gating
Chip；The quantity of at least two temperature sensors input unit is four；
Two input terminals of third gating chip respectively with two temperature in four temperature sensor input units
Cell input unit connects correspondingly, and the output end and four temperature sensors of the third gating chip are defeated
Enter three input terminals of other two temperature sensor input units and the second gating chip in unit correspondingly
Connection；The output end of the second gating chip is connect with the input terminal of the signal amplification module；
The control terminal of the second gating chip and third gating chip is connect with the central processing module respectively.
In temperature sensing circuit of the present invention, the integration module includes that the first gating chip and integral are single
Member, the first gating chip are connect with the integral unit, the control of the central processing module and the first gating chip
End connection processed is switched between integration phase and discharge regime with controlling the integral unit by first gating unit.
In temperature sensing circuit of the present invention, the integral unit includes capacitor C23, resistance R20 and first
Operational amplifier；
The inverting input terminal of first operational amplifier respectively with the first end of the capacitor C23 and the resistance R20
The normal phase input end of first end connection, first operational amplifier accesses the first reference voltage, first operational amplifier
Output end respectively connect with the second end of the voltage comparison module and the capacitor C23, the first gating chip
Port Z is connect with the second end of the capacitor C23, the first end of the port Z1 and the capacitor C23 of the first gating chip
The port x of connection, the first gating chip is connect with the second end of the resistance R20, and the one of the first gating chip is defeated
Enter end to connect with the output end of the signal amplification module；
The central processing module is connect with the control terminal of the first gating chip, is being integrated with controlling the integration module
Switch between stage and discharge regime.
In temperature sensing circuit of the present invention, in integration phase, the first gating chip by port Z and
It is isolated between the Z1 of port, the input terminal of control module connection and the port x is connected, capacitor C23, resistance R20 and first
Operational amplifier constitutes integral unit and charges to capacitor C23；
In discharge regime, the first gating chip is by port Z and port Z1 connection, to discharge capacitor C23.
In temperature sensing circuit of the present invention, the voltage comparison module includes second operational amplifier；
The inverting input terminal of the second operational amplifier is connect with the output end of first operational amplifier；
The normal phase input end of the second operational amplifier also accesses the first reference voltage.
It further include latch in temperature sensing circuit of the present invention, the output end of the second operational amplifier
It is connect with an input terminal of the latch, the output end of the latch and another input terminal and the central processing module
Connection.
In temperature sensing circuit of the present invention, each temperature sensor input unit includes resistance R1, electricity
Hinder R6 and capacitor C1；
The both ends of the temperature sensor are connect with the both ends of the resistance R6 respectively, the default electricity of one end access of the resistance R1
Pressure, the other end of the resistance R1 are connect with one end of the resistance R6, and the other end of the resistance R6 is with the capacitor C1's
One end connection, the other end ground connection of the capacitor C1；The voltage of the common node of the resistance R6 and the capacitor C1 is institute
State detectable voltage signals.
In temperature sensing circuit of the present invention, the central processing module respectively with each temperature sensor
The common node of the resistance R1 and resistance R6 of input unit are connected to detect whether corresponding temperature sensor has in connection.
The present invention is connect by providing signal amplification module input terminal with the output end of the gating module, for that will gate
The detectable voltage signals of module output are amplified to obtain amplified signal；Integration module, the output with the signal amplification module
End connection carries out integral operation to the amplified signal to obtain the amplified signal of the signal amplification module output；Voltage ratio
Compared with module, the integral voltage and predeterminated voltage to export after the integral operation by the integration module are connect with the integration module
It is compared, and according to comparison result outputs level signals；Central processing module is connect with the voltage comparison module, institute
It is defeated for corresponding temperature sensor to be calculated according to the level signal that the voltage comparison module exports to state central processing module
Enter the temperature value of unit detection；To have the beneficial effect for improving temperature detection sensitivity, and cost can be reduced.
Detailed description of the invention
Fig. 1 is a kind of functional block diagram of the temperature sensing circuit in some embodiments of the invention.
Fig. 2 is a kind of circuit structure diagram of the temperature sensing circuit in some embodiments of the invention.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In description of the invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected or can mutually communicate；It can be directly connected, it can also be by between intermediary
It connects connected, can be the connection inside two elements or the interaction relationship of two elements.For the ordinary skill of this field
For personnel, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Fig. 1 is please referred to, Fig. 1 is the structural schematic diagram of the temperature sensing circuit in one embodiment of the invention, the temperature detection
Circuit, comprising: at least two temperature sensor input units 10, gating module 20, signal amplification module 30, integration module 40,
Voltage comparison module 50 and central processing module 60.
Wherein, in the present embodiment, the quantity of at least two temperature sensors input unit 10 is 4.Each temperature
Cell input unit 10 is used to cut-in temperature sensor, detects temperature and generates corresponding detectable voltage signals.Gate mould
Block 20 is connect respectively respectively by least two temperature sensor at least two temperature sensors input unit 10
The detectable voltage signals of a temperature sensor input unit 10 in input unit 10 export；The input of signal amplification module 30
End is connect with the output end of the gating module 20, and the detectable voltage signals for exporting gating module 20 are amplified to be put
Big signal；Integration module 40 is connect to obtain the signal amplification module 30 and export with the output end of the signal amplification module 30
Amplified signal, and to the amplified signal carry out integral operation；Voltage comparison module 50 is connect to incite somebody to action with the integration module 40
The integral voltage exported after the integral operation of the integration module 40 is compared with predeterminated voltage, and exports electricity according to comparison result
Ordinary mail number；Central processing module 60 is connect with the voltage comparison module 50, and the central processing module 60 is used for according to the electricity
Ordinary mail number obtains the temperature value of corresponding temperature sensor detection, specially according in the level signal of the output of voltage comparison module 50
High level duration calculate corresponding temperature sensor detection temperature value.
Wherein, referring to Fig. 2, which connect with the control terminal of the gating module 20, with
The detectable voltage signals of corresponding temperature cell input unit 10 are exported to the integration module in controlling the gating module 20
40.The central processing module 60 uses single-chip microcontroller, model AT89S51RT2, naturally it is also possible to using the monolithic of other models
Machine or micro-chip processor.Central processing module 60 that is to say chip processor AT89S51 RT2 respectively with each temperature sensor
The common node of the resistance R1 and resistance R6 of input unit 10 are connected to detect whether corresponding temperature sensor has in connection.
Specifically, each temperature sensor input unit 10 includes resistance R1, resistance R6 and capacitor C1；Temperature sensor
Both ends connect respectively with the both ends of resistance R6, such as both ends with a temperature sensor respectively the terminal K11 and K12 in figure
Connection, terminal K21 and K22 are connect with the both ends of a temperature sensor respectively, and terminals P 31 and K32 are passed with a temperature respectively
The both ends of sensor connect, and terminal K41 and K32 are connect with the both ends of a temperature sensor respectively.One end of resistance R1 is accessed
Predeterminated voltage, such as 2.5V, the other end of the resistance R1 are connect with one end of the resistance R6, the other end of the resistance R6
It is connect with one end of the capacitor C1, the other end ground connection of the capacitor C1；The resistance R6's and capacitor C1 is public
The voltage of node is the detectable voltage signals.Also, the temperature sensor that each temperature sensor input unit 10 accesses with
One end of capacitor C1 connection also that is to say that chip processor AT89S51 RT2 is connect with the central processing module 60.Specifically, in figure
Terminal K12, K22, K32 and K42 respectively with port P00, P01, P02, P03 of chip processor AT89S51 RT2 correspondingly
Connection.
Wherein, which includes that the second gating chip U5 and third gate chip U7；At least two temperature
The quantity for spending cell input unit 10 is four.Temperature sensor can use thermocouple.
Wherein, two input terminals of third gating chip U7 are respectively and in four temperature sensor input units 10
Two temperature sensor input units 10 connect correspondingly, the output end of third gating chip U7 and four institutes
It states other two temperature sensor input units 10 in temperature sensor input unit 10 and described second and gates chip U5's
Three input terminals connect correspondingly；The input of the output end and the signal amplification module 30 of the second gating chip U5
End connection；It is described second gating chip U5 and the third gating chip U7 control terminal respectively with the central processing module
60 connections.
Wherein, the second gating chip U5 and third gating chip U7 can use 4053 chip of model.This
The port VEE of three gating chip U7 is grounded by capacitor C26, and the port INH and the port GND are grounded, which gates chip
Gating control port A, B, C of U7 that is to say respectively with the central processing module 60 chip processor AT89S51 RT2 port P20,
P21 and P22 are connected correspondingly.The port x 1 of third gating chip U7 is connect with terminal K32, which gates core
The port Y1 of piece U7 is connect with the terminals P 42.Wherein, port x 1, Y1 and the Z1 of third gating chip U7 is the signal
Input port.The port x of third gating chip U7 that is to say that Strobe output mouth and the signal of second gating chip U5 are defeated
Entering end that is to say port Z1 connection.The central processing module 60 by control this export to the third gate chip U7 port A,
B, the level of C come control the third gating chip U7 strobe case.
This second gating chip U5 other two quotation marks input terminal that is to say port x 1 and port Y1 respectively with terminal
K12 and terminal K22 connection.The Strobe output mouth of second gating chip U5 that is to say port x and the signal amplification module
30 input terminal connection.Port A, B, C of second gating chip U5 that is to say single-chip microcontroller with central processing module 60 respectively
Port P15, P16, P17 of AT89S51RT2 is connected.The central processing module 60 by control this export to this second gating core
The level of port A, B, C of piece U5 come control this second gating chip U5 strobe case.The signal amplification module 30 is using existing
There is the normal signal amplifying circuit in technology can be realized, this will not be repeated here.
In some embodiments, which includes the first gating chip U6 and integral unit, first choosing
Obturator piece U6 is connect with the integral unit, the central processing module 60 with it is described first gating chip control terminal connect with
The integral unit is controlled by the first gating unit U6 to switch between integration phase and discharge regime.
Specifically, which includes capacitor C23, resistance R20 and the first operational amplifier F2；First operation amplifier
The inverting input terminal of device F2 is connect with the first end of the first end of the capacitor C23 and the resistance R20 respectively, and described first
The normal phase input end of operational amplifier F2 accesses the first reference voltage, the output end of the first operational amplifier F2 respectively with institute
State voltage comparison module 50 and the second end connection of the capacitor C23, the port Z and the electricity of the first gating chip F2
Holding the second end connection of C23, the port Z1 of the first gating chip F2 is connect with the first end of the capacitor C23, and described the
One gating chip F2 port x connect with the second end of the resistance R20, it is described first gate chip an input terminal with it is described
The output end of signal amplification module 30 connects；The control terminal of the central processing module 60 and the first gating chip U6 connects
It connects, is switched between integration phase and discharge regime with controlling the integration module 40.
Wherein, which further includes that a reference voltage provides unit, the reference voltage provide unit be used for this
The normal phase input end of one operational amplifier F2 provides preset stable reference voltage.It includes controllable that the reference voltage, which provides unit,
Silicon rectifier U2, resistance R12, resistance R26, resistance R10, capacitor C20, capacitor C13, resistance R16 and resistance R17.Wherein, should
Resistance R12, resistance R26, resistance R10 are sequentially connected, and predeterminated voltage is accessed in one end far from resistance R26 of resistance R12, such as
The cathode of 5V, silicon controlled rectifier (SCR) U2 are connect with the common node of resistance R12 and resistance R26, the silicon controlled rectifier (SCR)
The anode of U2 is connect with one end far from resistance R26 of resistance R10, the control electrode of silicon controlled rectifier (SCR) U2 and the resistance
The common node of R26 and resistance R10 connection, the both ends of the capacitor C20 respectively with the cathode of silicon controlled rectifier (SCR) U2 and
Anode connection, the both ends of capacitor C13 are connect with the cathode of silicon controlled rectifier (SCR) U2 and anode respectively, and the one of resistance R16
End connect with one end of capacitor C13, the other end of resistance R16 is connect with one end of resistance R17, the other end of resistance R17 and
The common node of the other end connect and ground of capacitor C13, resistance R16 and resistance R17 and first operational amplifier
The normal phase input end of F2 is connected to give the normal phase input end of first operational amplifier F2 to provide stable reference voltage.Benchmark electricity
TL431 or three terminal regulator can be used in pressure chip U2.
In integration phase, the central processing module 60 that is to say chip processor AT89S51 RT2 by port P15, P16 with
And P17 sends control signal to port A, port B and the port C of first gating chip U6, so that the first gating chip
U6 will be isolated between port Z and port Z1 and hanging, the input terminal that signal amplification module 30 is connected and port x connection,
It that is to say and connect the port x 1 of port first gating chip U6 and the port x, capacitor C23, resistance R20 and the first fortune
Amplifier F2 is calculated to constitute integral unit and charge to capacitor C23.
In discharge regime, the central processing module 60 that is to say chip processor AT89S51 RT2 by port P15, P16 with
And P17 sends control signal to port A, port B and the port C of first gating chip U6, so that the first gating chip U6
By port Z and port Z1 connection, to discharge capacitor C23.
Wherein, which includes second operational amplifier F3, capacitor C15 and capacitor C18；Described second
The inverting input terminal of operational amplifier F3 is connect with the output end of the first operational amplifier F2, the second operational amplifier
The normal phase input end of F3 is connect with one end of one end of the capacitor C15 and capacitor C18 respectively, and the capacitor C15's is another
The other end of end and capacitor C18 ground connection；The normal phase input end of second operational amplifier F3 also accesses the first reference voltage.
In some embodiments, which further includes including latch UC and resistance R27, second fortune
The output end for calculating amplifier F3 is connect with one end of the resistance R27, and the other end of the resistance R27 is with the latch UC's
The connection of one input terminal, the output end and another input terminal of the latch UC are connect with the central processing module 60, specifically
To be connect with the port P16 of the central processing module 60.
Specific workflow: the central processing module 60 gates core by controlling the second gating chip and third first
The strobe case of piece selects corresponding temperature sensor input unit 10 as detectable voltage signals supplier, then, is integrating
When the stage, which that is to say that chip processor AT89S51 RT2 sends control letter by port P15, P16 and P17
Port A, port B and the port C of first gating chip U6 number are given, so that the first gating chip U6 is by port Z and end
Be isolated between mouthful Z1 and hanging, the input terminal and the port x that signal amplification module 30 is connected are connected, that is to say by port this
The port x 1 and the port x of one gating chip U6 is connected, and capacitor C23, resistance R20 and the first operational amplifier F2 constitute product
Sub-unit simultaneously charges to capacitor C23.
When discharge regime, the central processing module 60 that is to say chip processor AT89S51 RT2 by port P15, P16 and
P17 sends control signal to port A, port B and the port C of first gating chip U6, so that the first gating chip U6 will
Port Z and port Z1 connection, to discharge capacitor C23.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the invention.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of temperature sensing circuit characterized by comprising
At least two temperature sensor input units are used for cut-in temperature sensor；
Gating module is connect respectively respectively by least two temperature at least two temperature sensors input unit
Spend the detectable voltage signals output of a temperature sensor unit in cell input unit；
Signal amplification module, input terminal are connect with the output end of the gating module, the detection for exporting gating module
Voltage signal amplifies to obtain amplified signal；
Integration module is connect to obtain the amplification of the signal amplification module output with the output end of the signal amplification module
Signal, and integral operation is carried out to the amplified signal；
Voltage comparison module connect the integral voltage to export after the integral operation by the integration module with the integration module
It is compared with predeterminated voltage, and according to comparison result outputs level signals；
Central processing module is connect with the voltage comparison module, and the central processing module is used for according to the voltage ratio
Compared with the temperature value that the detection of corresponding temperature sensor is calculated in the level signal of module output.
2. temperature sensing circuit according to claim 1, which is characterized in that the central processing module and the gating mould
The control terminal of block connects, with for controlling the gating module that the detectable voltage signals of corresponding temperature cell input unit are defeated
Out to the integration module.
3. temperature sensing circuit according to claim 2, which is characterized in that the gating module includes the second gating chip
And third gates chip；The quantity of at least two temperature sensors input unit is four；
Two input terminals of third gating chip respectively with two temperature in four temperature sensor input units
Cell input unit connects correspondingly, and the output end and four temperature sensors of the third gating chip are defeated
Enter three input terminals of other two temperature sensor input units and the second gating chip in unit correspondingly
Connection；The output end of the second gating chip is connect with the input terminal of the signal amplification module；
The control terminal of the second gating chip and third gating chip is connect with the central processing module respectively.
4. temperature sensing circuit according to claim 1-3, which is characterized in that the integration module includes first
Chip and integral unit are gated, the first gating chip is connect with the integral unit, the central processing module and institute
State the control terminal connection of the first gating chip with controlled by first gating unit integral unit in integration phase and
Switch between discharge regime.
5. temperature sensing circuit according to claim 4, which is characterized in that the integral unit includes capacitor C23, resistance
R20 and the first operational amplifier；
The inverting input terminal of first operational amplifier respectively with the first end of the capacitor C23 and the resistance R20
The normal phase input end of first end connection, first operational amplifier accesses the first reference voltage, first operational amplifier
Output end respectively connect with the second end of the voltage comparison module and the capacitor C23, the first gating chip
Port Z is connect with the second end of the capacitor C23, the first end of the port Z1 and the capacitor C23 of the first gating chip
The port x of connection, the first gating chip is connect with the second end of the resistance R20, and the one of the first gating chip is defeated
Enter end to connect with the output end of the signal amplification module；
The central processing module is connect with the control terminal of the first gating chip, is being integrated with controlling the integration module
Switch between stage and discharge regime.
6. temperature sensing circuit according to claim 5, which is characterized in that in integration phase, the first gating core
Piece will be isolated between port Z and port Z1, the input terminal of control module connection and the port x be connected, capacitor C23, electricity
Resistance R20 and the first operational amplifier constitute integral unit and charge to capacitor C23；
In discharge regime, the first gating chip is by port Z and port Z1 connection, to discharge capacitor C23.
7. temperature sensing circuit according to claim 5, which is characterized in that the voltage comparison module includes the second operation
Amplifier；
The inverting input terminal of the second operational amplifier is connect with the output end of first operational amplifier；
The normal phase input end of the second operational amplifier also accesses the first reference voltage.
8. temperature sensing circuit according to claim 7, which is characterized in that further include latch, second operation is put
The big output end of device is connect with an input terminal of the latch, the output end of the latch and another input terminal with it is described
Central processing module connection.
9. temperature sensing circuit according to claim 1, which is characterized in that each temperature sensor input unit packet
Include resistance R1, resistance R6 and capacitor C1；
The both ends of the temperature sensor are connect with the both ends of the resistance R6 respectively, the default electricity of one end access of the resistance R1
Pressure, the other end of the resistance R1 are connect with one end of the resistance R6, and the other end of the resistance R6 is with the capacitor C1's
One end connection, the other end ground connection of the capacitor C1；The voltage of the common node of the resistance R6 and the capacitor C1 is institute
State detectable voltage signals.
10. temperature sensing circuit according to claim 9, which is characterized in that the central processing module respectively with it is each
The common node of the resistance R1 and resistance R6 of the temperature sensor input unit are connected to detect corresponding temperature sensor
It is no to have in connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811571117.XA CN109374151A (en) | 2018-12-21 | 2018-12-21 | Temperature sensing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811571117.XA CN109374151A (en) | 2018-12-21 | 2018-12-21 | Temperature sensing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109374151A true CN109374151A (en) | 2019-02-22 |
Family
ID=65371173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811571117.XA Pending CN109374151A (en) | 2018-12-21 | 2018-12-21 | Temperature sensing circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109374151A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2244719Y (en) * | 1995-06-15 | 1997-01-08 | 成都小松检测技术研究所 | Wide range high-precision digital thermometer |
| CN2783289Y (en) * | 2004-12-29 | 2006-05-24 | 中国科学院空间科学与应用研究中心 | Multi-channel temperature sampling system for aeronatutics and astronautics system |
| CN101291079A (en) * | 2007-04-18 | 2008-10-22 | 李仕清 | Adaptive battery charging circuit |
| CN101394094A (en) * | 2007-09-20 | 2009-03-25 | 李仕清 | Full automatic high efficient voltage step-up step-down circuit |
| CN201307123Y (en) * | 2008-12-05 | 2009-09-09 | 祁金玉 | Primary instrument with combination of vibration speed and temperature |
| CN202018345U (en) * | 2011-03-07 | 2011-10-26 | 济南大学 | Novel thermocouple temperature measurement module |
| CN206683789U (en) * | 2017-04-13 | 2017-11-28 | 深圳市西林电气技术有限公司 | A kind of multi-channel temperature measurement circuit |
| CN207215304U (en) * | 2017-08-28 | 2018-04-10 | 深圳市英蓓特科技有限公司 | A kind of multichannel temperature Acquisition Circuit |
-
2018
- 2018-12-21 CN CN201811571117.XA patent/CN109374151A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2244719Y (en) * | 1995-06-15 | 1997-01-08 | 成都小松检测技术研究所 | Wide range high-precision digital thermometer |
| CN2783289Y (en) * | 2004-12-29 | 2006-05-24 | 中国科学院空间科学与应用研究中心 | Multi-channel temperature sampling system for aeronatutics and astronautics system |
| CN101291079A (en) * | 2007-04-18 | 2008-10-22 | 李仕清 | Adaptive battery charging circuit |
| CN101394094A (en) * | 2007-09-20 | 2009-03-25 | 李仕清 | Full automatic high efficient voltage step-up step-down circuit |
| CN201307123Y (en) * | 2008-12-05 | 2009-09-09 | 祁金玉 | Primary instrument with combination of vibration speed and temperature |
| CN202018345U (en) * | 2011-03-07 | 2011-10-26 | 济南大学 | Novel thermocouple temperature measurement module |
| CN206683789U (en) * | 2017-04-13 | 2017-11-28 | 深圳市西林电气技术有限公司 | A kind of multi-channel temperature measurement circuit |
| CN207215304U (en) * | 2017-08-28 | 2018-04-10 | 深圳市英蓓特科技有限公司 | A kind of multichannel temperature Acquisition Circuit |
Non-Patent Citations (4)
| Title |
|---|
| 徐锡盛: "挤出机温度控制板电路剖析", 《华南师范大学学报（自然科学版）》 * |
| 李晓明等: "《电路与电子技术》", 31 July 2004, 高等教育出版社 * |
| 许卫等: "双积分AD转换设计", 《2013年全国大学生电子设计竞赛》 * |
| 郑长勇等: "单片机在温度检测与控制中的应用", 《电子质量》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10663423B2 (en) | System for detecting electrical properties of a molecular complex | |
| CN101872193B (en) | Multifunctional measurement and control module based on field bus | |
| CN106768459B (en) | A kind of Temperature and Humidity circuit and control method | |
| CN207215744U (en) | A kind of humidity sensor chip with built-in calibration function | |
| CN109357783A (en) | Temperature sensing circuit | |
| CN109580012A (en) | Temperature sensing circuit based on integral calculation | |
| CN212845790U (en) | Small capacity relay characteristic detector | |
| CN109374151A (en) | Temperature sensing circuit | |
| CN109828224A (en) | A kind of application method of linear Hall integrated circuit in weak magnetic detection sensor | |
| CN109357782A (en) | Temperature sensing circuit | |
| CN109142455A (en) | Humidity detector based on integral operation | |
| CN201654558U (en) | Multifunctional measure and control module based on field bus | |
| CN105277292A (en) | Temperature measurement device | |
| CN109357778A (en) | Temperature-detecting device | |
| CN206556780U (en) | Temperature-detecting device | |
| CN110059664A (en) | Fingerprint recognition circuit and fingerprint identification method | |
| CN109298029A (en) | Intelligent humidity detection device based on integral operation | |
| CN109142456A (en) | Humidity detector based on integral operation | |
| CN209250231U (en) | Temperature protection circuit and temperature-detecting device for it | |
| JPS6336116A (en) | Atmosphere detection card | |
| CN207923316U (en) | A kind of NTC temperature sensor signals detection circuit | |
| CN2365677Y (en) | Apparatus for measuring resistance quantity with one chip machine | |
| CN106197771A (en) | A kind of computer based pressure measurement system | |
| CN220418680U (en) | Temperature detection circuit | |
| CN219675306U (en) | Wide temperature zone temperature detection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190222 |