CN109361410A - A kind of high power solid state transmitter circuitry - Google Patents

A kind of high power solid state transmitter circuitry Download PDF

Info

Publication number
CN109361410A
CN109361410A CN201811526211.3A CN201811526211A CN109361410A CN 109361410 A CN109361410 A CN 109361410A CN 201811526211 A CN201811526211 A CN 201811526211A CN 109361410 A CN109361410 A CN 109361410A
Authority
CN
China
Prior art keywords
amplification circuit
power
solid state
circuit
directional coupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811526211.3A
Other languages
Chinese (zh)
Other versions
CN109361410B (en
Inventor
谭琮
曹骑佛
王仁洁
王孜知
杨家棚
刘�文
杨留邡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aerospace Jiangnan Group Co ltd
Guizhou Aerospace Electronic Technology Co Ltd
Original Assignee
Guizhou Aerospace Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guizhou Aerospace Electronic Technology Co Ltd filed Critical Guizhou Aerospace Electronic Technology Co Ltd
Priority to CN201811526211.3A priority Critical patent/CN109361410B/en
Publication of CN109361410A publication Critical patent/CN109361410A/en
Application granted granted Critical
Publication of CN109361410B publication Critical patent/CN109361410B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B1/0483Transmitters with multiple parallel paths
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0408Circuits with power amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B7/00Radio transmission systems, i.e. using radiation field
    • H04B7/02Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/06Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station

Abstract

A kind of high power solid state transmitter circuitry provided by the invention, including frequency source, drive amplification circuit, microwave switch, 3dB directional coupler A, 3dB directional coupler B, power amplification circuit 1, power amplification circuit 2, modulation circuit, modulation and ON-OFF control circuit, antenna 1, antenna 2;The frequency source and drive amplification circuit connection, the modulation and ON-OFF control circuit are connect with drive amplification circuit with microwave switch respectively, the microwave switch is connect with two input terminals of 3dB directional coupler A, the output end of the 3dB directional coupler A respectively with power amplification circuit 1, the input terminal of power amplification circuit 2 connects, the input terminal of the 3dB directional coupler B respectively with power amplification circuit 1, the output end of power amplification circuit 2 connects, the modulation circuit respectively with power amplification circuit 1, power amplification circuit 2 connects, the output end of the 3dB directional coupler B respectively with antenna 1, antenna 2 connects.

Description

A kind of high power solid state transmitter circuitry
Technical field
The present invention relates to a kind of high power solid state transmitter circuitrys.
Background technique
For transmitter as the important component in command guidance system, major function is to realize the amplification of electromagnetic wave signal And modulation.New demand is proposed in modern war, to the anti-electromagnetic interference capability of command guidance system to meet new demand hair Machine is penetrated to develop towards big bandwidth, high transmitting power direction.Existing transmitter solution: frequency source generates a high-frequency signal, Magnetron is injected after drive amplification, signal is further amplified magnetron, then gives signal to day by microwave switch Line.Modulated signal controls drive amplification and magnetron carries out impulse modulation, and switch control signal control gives signal to antenna 1 also It is antenna 2.Existing transmitter solution uses magnetron as power amplifying device, because of performance of magnetron, work Bandwidth is small, reliability is low, because magnetron reliability has resulted in huge economic losses in production process.In addition background scheme will be micro- Wave switch is placed on after magnetron, therefore microwave switch needs to bear high-power, this just proposes the design of microwave switch huge Challenge, linear large power microwave switch is with high costs at present, and reliability is not high.The electromagnetic environment for the battlefield complexity that faces the future, hair It penetrates machine list and as antijamming measure is no longer satisfied requirement using high-power.And background scheme because magnetron limit, cannot Increase such as frequency hopping, direct expansion antijamming measure.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of high power solid state transmitter circuitrys.
The present invention is achieved by the following technical programs.
A kind of high power solid state transmitter circuitry provided by the invention, including frequency source, drive amplification circuit, microwave are opened Pass, 3dB directional coupler A, 3dB directional coupler B, power amplification circuit 1, power amplification circuit 2, modulation circuit, modulation and ON-OFF control circuit, antenna 1, antenna 2;The frequency source and drive amplification circuit connection, the modulation and ON-OFF control circuit It is connect respectively with drive amplification circuit with microwave switch, two input terminals of the microwave switch and 3dB directional coupler A connect It connects, the output end of the 3dB directional coupler A is connect with the input terminal of power amplification circuit 1, power amplification circuit 2 respectively, institute The input terminal for stating 3dB directional coupler B is connect with the output end of power amplification circuit 1, power amplification circuit 2 respectively, the tune Circuit processed is connect with power amplification circuit 1, power amplification circuit 2 respectively, the output end of the 3dB directional coupler B respectively with Antenna 1, antenna 2 connect.
The frequency source generates a high frequency continuous microwave carrier signal.
The drive amplification circuit carries out gain amplification to the small signal that frequency source generates, and is made of power amplifier.
The microwave switch is single-pole double-throw switch (SPDT), is controlled by the switch control signal that the ON-OFF control circuit generates.
The 3dB directional coupler is quadrature hybrid, straight-through to have 90 degree of phases between the output signal of coupled end Potential difference.The signal that wherein 3dB directional coupler A receives microwave switch transmission outputs it 90 degree of two-way phase phase difference, power phase Same signal;Using 90 degree of electric bridges, as power combiner, two-way power combing both may be implemented, together in its 3dB directional coupler B When can control the selection of output port again, while guaranteeing output power, promote bandwidth of operation, using such synthesizer When microwave switch low power microwave can be selected to switch, improve reliability.
1,2 pair of input signal of the power amplification circuit is amplified and is modulated, and exports highpowerpulse signal, by solid State power tube composition has higher reliability, higher duty ratio, bigger bandwidth of operation compared to traditional magnetron.
The modulation circuit receives external TTL and controls signal, to the drain voltage of solid state power pipe in power amplification circuit Carry out impulse modulation.
The modulation and ON-OFF control circuit receive external TTL and control signal, to solid state power pipe in drive amplification circuit Drain voltage carry out impulse modulation, microwave switch is controlled.
The beneficial effects of the present invention are: the present invention uses solid state power pipe as power amplifying device, compared to traditional Magnetron has higher reliability, higher duty ratio, bigger bandwidth of operation, faster response time, higher efficiency.
Detailed description of the invention
Fig. 1 is invention's principle block diagram.
Specific embodiment
Be described further below technical solution of the present invention, but claimed range be not limited to it is described.
A kind of high power solid state transmitter circuitry includes frequency source, drive amplification circuit, microwave switch, 3dB directional couple Device A, 3dB directional coupler B, power amplification circuit 1, power amplification circuit 2, modulation circuit, modulation and ON-OFF control circuit, day Line 1, antenna 2;The frequency source and drive amplification circuit connection, the modulation and ON-OFF control circuit are electric with drive amplification respectively Road is connect with microwave switch, and the microwave switch is connect with two input terminals of 3dB directional coupler A, the 3dB directional couple The output end of device A is connect with the input terminal of power amplification circuit 1, power amplification circuit 2 respectively, the 3dB directional coupler B's Input terminal is connect with the output end of power amplification circuit 1, power amplification circuit 2 respectively, and the modulation circuit is put with power respectively Big circuit 1, power amplification circuit 2 connect, and the output end of the 3dB directional coupler B is connect with antenna 1, antenna 2 respectively.
The frequency source generates a high frequency continuous microwave carrier signal.
The drive amplification circuit carries out gain amplification to the small signal that frequency source generates, and is made of power amplifier.
The microwave switch is single-pole double-throw switch (SPDT), is controlled by the switch control signal that the ON-OFF control circuit generates.
The 3dB directional coupler is quadrature hybrid, straight-through to have 90 degree of phases between the output signal of coupled end Potential difference.The signal that wherein 3dB directional coupler A receives microwave switch transmission outputs it 90 degree of two-way phase phase difference, power phase Same signal;Using 90 degree of electric bridges, as power combiner, two-way power combing both may be implemented, together in its 3dB directional coupler B When can control the selection of output port again, while guaranteeing output power, promote bandwidth of operation, using such synthesizer When microwave switch low power microwave can be selected to switch, improve reliability.
The power amplification circuit 1, power amplification circuit 2 are amplified and are modulated to input signal, export high-power arteries and veins Signal is rushed, is made of solid state power pipe, there is higher reliability, higher duty ratio, bigger compared to traditional magnetron Bandwidth of operation.
The modulation circuit receives external TTL and controls signal, to the drain voltage of solid state power pipe in power amplification circuit Carry out impulse modulation.
The modulation and ON-OFF control circuit receive external TTL and control signal, to solid state power pipe in drive amplification circuit Drain voltage carry out impulse modulation, microwave switch is controlled.
Working principle: frequency source generates a small signal of high frequency continuous microwave as carrier wave in the present invention, puts into driving Big circuit amplifies small signal in the case where modulating the control with ON-OFF control circuit, exports one by pulse modulated micro- Wave signal enters microwave switch, and microwave switch is single-pole double-throw switch (SPDT), and in the case where modulating the control with ON-OFF control circuit, selection will The pulse signal of drive amplification circuit input passes to a port of 3dB directional coupler A, and 3dB directional coupler A is orthogonal Hybrid network can export 90 degree of two-way phase phase difference, the identical two paths of signals of power enters corresponding power amplification circuit, function Rate amplifying circuit is using solid state power pipe, and selection inputs the difference into 3dB directional coupler B under the control of modulation circuit Input terminal is input in corresponding antenna after the power combing of 3dB directional coupler B.

Claims (9)

1. a kind of high power solid state transmitter circuitry, including frequency source, drive amplification circuit, microwave switch, 3dB directional coupler A, 3dB directional coupler B, power amplification circuit 1, power amplification circuit 2, modulation circuit, modulation and ON-OFF control circuit, antenna 1, antenna 2;It is characterized by: the frequency source and drive amplification circuit connection, the modulation and ON-OFF control circuit respectively and Drive amplification circuit is connect with microwave switch, and the microwave switch is connect with two input terminals of 3dB directional coupler A, described The output end of 3dB directional coupler A is connect with the input terminal of power amplification circuit 1, power amplification circuit 2 respectively, and the 3dB is fixed It is connect respectively with the output end of power amplification circuit 1, power amplification circuit 2 to the input terminal of coupler B, the modulation circuit point Do not connect with power amplification circuit 1, power amplification circuit 2, the output end of the 3dB directional coupler B respectively with antenna 1, day Line 2 connects.
2. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the frequency source generates one High frequency continuous microwave carrier signal.
3. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the drive amplification circuit pair The small signal that frequency source generates carries out gain amplification, is made of power amplifier.
4. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the microwave switch is hilted broadsword Commutator is controlled by the switch control signal that ON-OFF control circuit generates.
5. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the 3dB directional coupler A It is quadrature hybrid, it is straight-through to export 90 degree of two-way phase phase difference signal identical with power respectively with coupled end.
6. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the 3dB directional coupler B The two pulse signals that power amplification circuit exports are synthesized as power combiner using 90 degree of electric bridges.
7. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the power amplification circuit 1, Power amplification circuit 2 is amplified and is modulated to input signal, is exported highpowerpulse signal, is made of solid state power pipe.
8. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the modulation circuit receives outer Portion TTL controls signal, carries out impulse modulation to the drain voltage of solid state power pipe in power amplification circuit.
9. a kind of high power solid state transmitter circuitry as described in claim 1, it is characterised in that: the modulation and switch control Circuit receives external TTL signal and switch control signal, carries out pulse tune to the drain voltage of solid state power pipe in amplifying circuit It makes and microwave switch is controlled with switch pulse signal output port.
CN201811526211.3A 2018-12-13 2018-12-13 High-power solid-state transmitter circuit Active CN109361410B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811526211.3A CN109361410B (en) 2018-12-13 2018-12-13 High-power solid-state transmitter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811526211.3A CN109361410B (en) 2018-12-13 2018-12-13 High-power solid-state transmitter circuit

Publications (2)

Publication Number Publication Date
CN109361410A true CN109361410A (en) 2019-02-19
CN109361410B CN109361410B (en) 2021-02-26

Family

ID=65328684

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811526211.3A Active CN109361410B (en) 2018-12-13 2018-12-13 High-power solid-state transmitter circuit

Country Status (1)

Country Link
CN (1) CN109361410B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202551012U (en) * 2012-04-26 2012-11-21 成都六三零电子设备有限公司 L-wave-band solid-state transmitter
CN203590157U (en) * 2013-11-07 2014-05-07 北京同方吉兆科技有限公司 Dismountable double-tube efficient power amplification module structure
CN105245238A (en) * 2015-10-21 2016-01-13 成都六三零电子设备有限公司 650MHz/150kW solid-state transmitter
CN205081773U (en) * 2015-10-21 2016-03-09 成都六三零电子设备有限公司 Solid -state transmitter
CN106656075A (en) * 2016-12-13 2017-05-10 石家庄开发区泰顺电子通讯有限公司 Short-wave full-band 500W solid-state amplifier
CN206422751U (en) * 2017-02-14 2017-08-18 陕西东方华通微波科技有限公司 A kind of X-band solid-state power amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202551012U (en) * 2012-04-26 2012-11-21 成都六三零电子设备有限公司 L-wave-band solid-state transmitter
CN203590157U (en) * 2013-11-07 2014-05-07 北京同方吉兆科技有限公司 Dismountable double-tube efficient power amplification module structure
CN105245238A (en) * 2015-10-21 2016-01-13 成都六三零电子设备有限公司 650MHz/150kW solid-state transmitter
CN205081773U (en) * 2015-10-21 2016-03-09 成都六三零电子设备有限公司 Solid -state transmitter
CN106656075A (en) * 2016-12-13 2017-05-10 石家庄开发区泰顺电子通讯有限公司 Short-wave full-band 500W solid-state amplifier
CN206422751U (en) * 2017-02-14 2017-08-18 陕西东方华通微波科技有限公司 A kind of X-band solid-state power amplifier

Also Published As

Publication number Publication date
CN109361410B (en) 2021-02-26

Similar Documents

Publication Publication Date Title
CN201600448U (en) MWW (millimeter wave) coherent seeker front end device
CN205812005U (en) A kind of Five-channel millimeter wave transceiving assembly
CN106411405B (en) A kind of high flat upper sideband inhibits to generate system and method than multi-carrier signal
US3895304A (en) Tunable microwave notch filter
CN105450185A (en) Reconfigurable high-efficiency high-linearity broadband power amplifying method and amplifier
CN106646386B (en) A kind of multipolarization microwave launcher and method
CN102819015B (en) Short-distance side-lobe frequency-modulated interrupted continuous-wave radar device
CN102611469B (en) A kind of phase-shift filtering method
Quaglia et al. Load-modulated balanced amplifier: From first invention to recent development
CN109361410A (en) A kind of high power solid state transmitter circuitry
CN103281098B (en) For multi-time slot transceiver and the multi-slot communication method of tdma system
CN105634418A (en) Power synthesis amplifier
CN104683035A (en) Optical down-conversion method and system for high-frequency narrowband signal
CN114122727B (en) Terahertz amplitude modulator utilizing reverse phase interference principle
CN102237931B (en) High-frequency broadband radio frequency signal optical fiber zooming system
CN210225409U (en) TR subassembly of X wave band
CN111162816B (en) High-isolation interference system shared by transmitting and receiving antennas
CN103236869B (en) Multi-function transceiving circuit
CN106656253A (en) Ka-band MIMO transceiving device for cloud target detection experiment
CN107728701B (en) A kind of Ka wave band and spread degree control assembly
CN111130587A (en) Novel SC frequency channel broadband TR subassembly
CN204145461U (en) A kind of high-frequency signal launches modulation circuit
RU2420871C2 (en) Radio transmitter
CN215186653U (en) Doherty power amplifier based on extended continuous B/J-type power amplification mode
CN110336569B (en) Radio frequency switch device for realizing high isolation and no standing wave change

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20221230

Address after: 550009 No.7 Honghe Road, economic and Technological Development Zone, Guiyang City, Guizhou Province

Patentee after: Aerospace Jiangnan Group Co.,Ltd.

Patentee after: GUIZHOU AEROSPACE ELECTRONIC TECHNOLOGY Co.,Ltd.

Address before: 550009, Honghe Road, Xiaohe District, Guizhou, Guiyang 7

Patentee before: GUIZHOU AEROSPACE ELECTRONIC TECHNOLOGY Co.,Ltd.