CN109347455A - Graphene resonant mode analog-digital converter - Google Patents
Graphene resonant mode analog-digital converter Download PDFInfo
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- CN109347455A CN109347455A CN201811231074.0A CN201811231074A CN109347455A CN 109347455 A CN109347455 A CN 109347455A CN 201811231074 A CN201811231074 A CN 201811231074A CN 109347455 A CN109347455 A CN 109347455A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0073—Integration with other electronic structures
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- H—ELECTRICITY
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0075—Arrangements or methods specially adapted for testing microelecro-mechanical resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2426—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators in combination with other electronic elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02251—Design
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Abstract
The invention discloses a kind of graphene resonant mode analog-digital converters, are made of driving circuit, modulating mechanism, graphene beam, vibration pickup, feed circuit, vibration excitor, frequency measurement circuit, resolver, input tested analog quantity, export digital quantity.The analog quantity of input is converted to M signal by driving circuit.Modulating mechanism generates modulation forces under M signal control, that is, acts on the axial force on graphene beam.Vibration pickup experiences vibration parameters, generates pick-up signal.Feed circuit inputs pick-up signal, exports accumulation signal.Vibration excitor generates exciting force under accumulation signal control, that is, acts on the normal force on graphene beam.Frequency measurement circuit measures resonance frequency.The measured value of resonance frequency is substituted into conversion function and calculated by resolver, and taking resulting value is the digital quantity of graphene resonant mode analog-digital converter output.The present invention can effectively improve stability, widen operating temperature range, it can be achieved that higher anti-radiation performance.
Description
Technical field
The invention belongs to analog-digital converter (ADC) technical fields, and in particular to a kind of graphene resonant mode analog-digital converter.
Background technique
1. requirement background of the invention
The present invention is mainly directed towards the high-performance TT&C system or fine measuring instrument of special dimension.These system requirements are high-quality
Low frequency (30kHz~3MHz) analog quantity in amount processing, also handles high frequency (3MHz~30MHz) signal sometimes.For ADC, it is desirable that
It takes into account exchange performance and DC performance, is operable with wide temperature range (such as -55 DEG C~+125 DEG C or wider).With the hair of demand
Exhibition, increasingly tends to the built-in ADC in ASIC (applied customization integrated circuit).Certain occasions are there is also a desire for certain Flouride-resistani acid phesphatase
Index request.This kind of system is generally the tandem product of semi-custom or Industry-oriented user, and small batch is belonged in quantity, weight
In performance, allow slightly higher cost.
2. the tradition ADC state of the art and problem
Traditional ADC mainly includes the structures such as Pipeline, Sigma-Delta, SAR, belongs to switched-capacitor circuit, therefore
All use integrated capacitor and MOS switch.According to specific structure, it is also possible to use analog comparator or operational amplifier.It is surveying
Measure the occasion of absolute magnitude (rather than relative scale), it is necessary to use sufficiently accurate voltage reference.
The DC performance index of ADC includes resolution ratio (digit), precision (zero point and full scale error), stability (zero point
Drift about with full scale), non-linear (INL, DNL) etc., exchange performance indicator includes conversion time, sample rate, SFDR etc..Voltage base
Quasi- main performance index includes precision (initial error), stability (drift), noise etc..
Influence ADC transformation result factor include: (1) element itself, as integrated capacitor (precision, charge-discharge characteristic),
MOS switch (charge injection, conducting resistance, leakage current), operational amplifier (input imbalance, input current, drift, slew rate),
Analog comparator (imbalance, input current, speed)；(2) matching precision of key element；(3) principle design and design parameter, such as
Capacitor array scale, pipeline series, charging and discharging currents, special technique measure (such as accelerating charge and discharge using inductance)；(4) electric
Press the performance of benchmark.
Wherein, integrated capacitor is usually made of metal electrode and silicon dioxide insulator medium, and characteristic is imitated by edge
It answers, the influence of numerous physical factors such as medium tan δ parameter, dielectric leakage stream, stray capacitance；Operational amplifier, analog comparator
With MOS switch using MOS transistor as primary element, performance is fundamentally by the gate-source effect of MOS transistor, channel
The influence of the physical factors such as effect and carrier mobility；Element matching precision depends on domain skill and craft precision；Array
Scale is restricted by factors such as cost, stray capacitance, lead impedances；Charging and discharging currents are restricted by factors such as power consumption, local heat effects；
The temperature drift of voltage reference is determined by the physics law of band-gap circuit, due to the temperature of band-gap circuit and compensation circuit song
Line formula is different, substantially cannot be completely eliminated.
Following apparatus volume data describes the problem.
For requirement background of the invention, the type selecting section of ADC is 20Msps~100Msps/14bit~16bit.It is popular
Industrial SoC processor (such as STM32 series) piece in ADC do not reach requirement, only consider one chip High Performance ADC product.Allusion quotation
Type model includes the MAX19588 of the AD9265 and Maxim company of ADI company.Their INL is better than 3LSB even 2LSB, zero point
Drift is better than ± 2ppm/ DEG C, and full scale drift is better than ± 15ppm/ DEG C, number of transistors 108Magnitude, using 0.18 μm of rank
Technique.The unit price of these products is hundred dollars of magnitudes, if to handle very multiple signals, cost is more considerable.
In terms of voltage reference, commercially available typical high-performance product is the MAX6350 of Maxim, and index (precision, temperature drift) is
0.02%, 1ppm/ DEG C, but operating voltage is higher；The ADR4525 index of ADI is 0.02%, 2ppm/ DEG C, and can be in work under 3V
Make.These belong to independent voltage reference device, generally obtain high-performance, the voltage base built in ASIC using laser correction technique
Standard generally is difficult to reach this performance.
Using the IC products of standard technology, normal operating temperatures range is -40 DEG C~+85 DEG C, high-grade device
Reachable+105 DEG C even+125 DEG C, but performance indicator can reduce under high temperature；And there is likely to be coupled interference problems by ASIC.
In short, ADC belongs to mixed signal processing circuit, natively there is the difficulty of parameter optimization and layout design in research and development
Topic.To meet integrated more important of DC performance, exchange performance, circuit scale, power consumption, high-temperature behavior, anti-radiation performance, ASIC
It asks, related research and development institution needs to pay bigger cost.
3. new technology approach and its feasibility
Based on the technical progress of graphene resonator, the invention proposes new technological approaches, that is, are based on graphene resonance
The technological approaches of device.
Graphene is a kind of New Two Dimensional thin-film material, and thickness only has one layer of atom, with special mechanically and electrically spy
Property.In micro-nano device field, the resonator based on graphene (refering in particular to single-layer graphene) is one of important research direction.
In terms of graphene resonator experimental study: 2007, McEuen P L seminar of Cornell Univ USA for the first time will
Graphene is applied to resonator, has obtained the certain law of its resonance frequency.2009, Columbia Univ USA's Hone J class
Topic group has developed the single-layer graphene resonator in conjunction with silicon MEMS structure, realizes the electrical detection of mechanical oscillation, concurrently
It is related with silicon electrode voltage resonance frequency has been showed.2010, McEuen P L seminar of Cornell Univ USA passed through electric excitation
Self-control graphene resonator is tested with light detection means.2013, which was made periphery fixed using SU-8 glue
Drum type resonator.2016, the design of Fan Shang spring research group of BJ University of Aeronautics & Astronautics was prepared for a kind of circular membrane graphene
Resonator, by theoretical and experimental study structural parameters and temperature to the affecting laws of its resonance characteristic.These experiments are stone
The technical feasibility of black alkene resonator provides foundation.
In terms of graphene resonator theoretical research: 2008, Sweden Chalmers, Thomas technology university Atalaya J etc. was by single layer
Graphene regards elastic sheet as, analyzes the steady-error coefficient and dynamic response of zero defect arbitrary loading graphene, gives resonance
Frequency approximate formula.2009, the Institute of Technology of India Murmu T etc. was analyzed using nonlocal elasticity theory embedded in elasticity
The vibration characteristics of single-layer graphene in medium.2012, Canadian the university of manitoba Arash B used molecular dynamics side
Method has studied nonlocal elasticity theory.2012, Shi Ming university of South Korea Kwon O K etc. was analyzed using Molecular Dynamics method
The mechanical response of graphene resonator under nano impress, discovery graphene resonator largely can by nanometer pressure and just
Therefore beginning Displacement Tuning, graphene resonator also have the great potential for being made into sensor.2016, BJ University of Aeronautics & Astronautics
The towering research group of Xing Wei is using Molecular Dynamics Method and summarizes the resonance characteristic of single-layer graphene resonator, including from
The factors such as resonance frequency and the vibration shape and size, chirality, strain, initial displacement, boundary condition when by vibrating are to its resonance spy
The influence of property, provides part of theory foundation for the combination of graphene resonator and silicon micro mechanism.
In terms of graphene resonator manufacture craft: 2010, passing through of McEuen P L seminar of Cornell Univ USA
It learns vapour deposition process and produces single-layer graphene resonator.Develop in recent years in Ni metal and Ni paillon or SiO2Film surface
By CVD growth single layer or the method for thin graphene, the production quality of graphene film has obtained large increase.2016,
Chinese Academy of Sciences's CAS Institute of Physics nanoscale physics and devices laboratory obtains millimeter magnitude high quality in Ru (0001) single-crystal surface and connects
Continue flawless monocrystalline single-layer graphene material.These high-quality graphene materials are without the system suspected of High-performance graphene resonator
Solid foundation is established.
4. summarizing
Based on above-mentioned reference, the required graphene resonator of the present invention, i.e., based on grapheme material, can be with telecommunications
Mechanical resonator that is number interactive, can integrating with silicon MEMS structure, has had been provided with preliminary theoretical basis and technical feasibility.
But ADC is constituted by core of this resonator, it there is no similar research both at home and abroad.
For constituting ADC, the beneficial features of graphene resonator include: size small (nanometer to micron dimension), resonance
Frequency height (hundreds of MHz to GHz magnitude), temperature stability are high, Q value is high, and, as a kind of mechanical resonator, hardly
The influence of raying.
Summary of the invention
1. present invention solves the technical problem that
The present invention solves to integrate design difficulty height, the technology difficulty height, work that High Performance ADC is faced in special dimension ASIC
The problems such as making that temperature range is limited, is not easy to realize that Flouride-resistani acid phesphatase index, circuit scale are huge, and relying on high-performance voltage reference.
2. the present invention solves the technical solution that above-mentioned technical problem uses
Graphene resonant mode analog-digital converter, including driving circuit 1, modulating mechanism 2, graphene beam 3, vibration pickup 4, feedback
Circuit 5, vibration excitor 6, frequency measurement circuit 7 and resolver 8, input include tested analog quantity AinWith sampling clock Ks, output
Including digital quantity Dout, it is tested analog quantity AinFor analog electrical signal, sampling clock KsFor dagital clock signal, numeral output DoutFor
Digital quantity；Driving circuit 1 is amplifying circuit, inputs tested analog quantity Ain, export M signal Am；Modulating mechanism 2 is held for electromechanics
Row mechanism inputs M signal Am, generate modulation forces Fm；M signal AmFor voltage or electric current, amplitude is much larger than driving circuit
1 output equivalent noise, the output less than driving circuit 1 is saturated amplitude, less than the maximum allowable input range of modulating mechanism 2；
Graphene beam 3 is the clamped beam resonator of the both-end that is manufactured with grapheme material；Modulation forces FmGraphene is applied axially to for edge
The power of beam, exciting force FexiFor the alternating force for being applied to graphene beam along normal direction；Vibration pickup 4 is mechanical quantity sensor, experiences stone
The vibration parameters P of black alkene beam 3v, export pick-up signal Adet, vibration parameters PvFor speed, acceleration, the displacement etc. of graphene beam,
Pick-up signal AdetFor with vibration parameters PvCorresponding electric signal；Feed circuit 5 inputs the pick-up signal Adet, export exciting
Signal Aexi, accumulation signal AexiFor with pick-up signal AdetCorresponding voltage or electric current；Vibration excitor 6 is in accumulation signal AexiUnder control
Generate corresponding exciting force Fexi；Frequency measurement circuit 7 include sequential logical circuit, further include frequency reference device or have frequency base
Quasi- input terminal inputs pick-up signal Adet, output frequency numerical value of Nf；Frequency values NfIt is t at every sampling momentsiPick-up letter
Number AdetThe measured value of frequency；Sampling instant tsiFor sampling clock KsA series of defined time slices；Resolver 8 is numerical value
Algorithm, by frequency values NfSubstitute into conversion function gkValue is found a function, with obtained functional value for the numeral output Dout's
Numerical value；Conversion function gkFor the reversible real function of unitary.
In above-mentioned basic scheme, the modulating mechanism 2 can be based on several physical.Embodiments thereof one are based on quiet
The scheme of Electromechanical effect；Embodiments thereof two are the scheme based on electromagnetism stress effect.
In above-mentioned basic scheme, the vibration pickup 4 can be based on several physical.Embodiments thereof one are based on capacitor
The scheme of effect；Embodiments thereof two are the scheme based on electromagnetic induction effect；Embodiments thereof three are based on piezoresistive effect
Scheme.Wherein, capacity effect reflects Normal Displacement, and electromagnetic induction effect reflects normal velocity, and piezoresistive effect reflects internal stress.
In above-mentioned basic scheme, the sampling clock KsFor square-wave signal；The sampling instant tsiTake the every of square wave
A low level period, perhaps taking each high level period of square wave or taking starts from the upper time slice for jumping edge of each of square wave,
Or take the time slice for starting from jump edge under each of square wave.
In above-mentioned basic scheme, the conversion function gkMethod for building up can be with are as follows: the electricity based on the driving circuit 1
Road model and the physical model of the modulating mechanism 2 find out first function；Mechanical model based on the graphene beam 3 is asked
Second function out；Vibration characteristics based on the graphene beam 3 finds out third function；Find out first function, second function and
The inverse function of the compound function of third function obtains the conversion function gk。
In above-mentioned basic scheme, the conversion function gkMethod for building up or are as follows: in the tested analog quantity Ain's
One group of typical magnitude is taken within the scope of magnitude, successively constitutes X vector；Analog quantity is exported one by one according to X vector with signal source instrument, is made
To be tested analog quantity Ain, while with the intrinsic frequency of analysis instrument measurement 3 normal vibration mode of graphene beam；All measured values according to
Secondary composition Y-direction amount；Using X vector as independent variable, fitting/interpolating function is sought by dependent variable of Y-direction amount, as FM Function fk；It asks
The FM Function fkInverse function, as the conversion function gk。
3. the present invention compared with prior art the advantages of
(1) circuit is replaced with mechanical resonator, and using the material properties of graphene, fundamentally ensure that operating temperature
Range, temperature stability and radiation resistance；
(2) the characteristics of utilizing closed-loop system self-oscillation and digital Frequency Measuring technology, can be realized high score without complicated circuit
Resolution；
(3) voltage reference is replaced with frequency reference, ensure that whole high stability；
(4) change graphene resonator structure snd size can be changed its intrinsic frequency (hundreds of MHz to GHz), thus
Realize different sample rates (tens of MHz to hundreds of MHz)；
(5) requirement to IC design and technique reduces, and the influence of internal system interference also reduces, and is especially needing
When ADC and other parts (such as processor, memory, MEMS device) are integrated into monolithic ASIC, thus the system integration
Difficulty also decreases.
(6) can by a part (such as driving circuit 1, modulating mechanism 2, graphene beam 3, Vibration pickup 4, feed circuit 5,
Exciting element 6) it is encapsulated as individual front-end module, it is physically isolated with other parts, is removed between front-end module and frequency measurement circuit 7
Other than power supply and ground, it is only necessary to a frequency signal line.Front-end module can be enabled to work in more rugged environment in this way, it is such as high
The environment such as temperature, irradiation.
(7) belong to complete analog measurement device, directly obtain the tested analog quantity approximation with physical significance, and
It is not the coding as unit of LSB, programing work can be simplified.
The premise for realizing above-mentioned advantage is that design is correct, and standard includes: that each link structure meets specification, each link input quantity
Value is in Interface Matching, etc. between zone of reasonableness, each link.
Detailed description of the invention
Fig. 1 is basic embodiment schematic diagram of the invention；
Fig. 2 is core of the invention link schematic diagram；
Fig. 3 is core of the invention link calibration process schematic diagram；
Fig. 4 is the embodiment one of modulating mechanism 2；
Fig. 5 is the embodiment two of modulating mechanism 2；
Fig. 6 is the embodiment one of vibration pickup 4；
Fig. 7 is the embodiment two of vibration pickup 4；
Fig. 8 is the embodiment three of vibration pickup 4；
Fig. 9 is the unification of excitation effect-detection effect group；
Figure 10 is the combination two of excitation effect-detection effect；
Figure 11 is the combination three of excitation effect-detection effect；
Figure 12 is the combination four of excitation effect-detection effect.
Specific embodiment
Below in conjunction with description of the invention attached drawing, technical solution of the present invention is explained in more detail, it is clear that institute
The technical solution of description is only a part of technical solution of the present invention, rather than all.Since mentality of designing of the invention there is no
Precedent, therefore the working principle of the invention is briefly first introduced below, so that technical staff carries out relevant design and calculating；Later, complete
At the determination of core link function, the design of the design of core link and each auxiliary link, so that technical staff is being embodied
Middle reference, while showing technical feasibility of the invention.
1. the working principle of the invention brief introduction
The working principle of the invention is related to the rudimentary knowledge of electricity, Elasticity etc., to make statement be more clear rule
It is as shown in table 1 to formulate the unified symbol naming rule of full text referring to common practice for model:
1 symbol naming rule of table
The universal of 1.1ADC
In general, the ideal input/output relation (ignoring non-linear and noise) of ADC describes are as follows:
Vin=LSB × Code+EQ
Wherein VinTo be tested analog voltage (corresponding tested analog quantity A of the inventionin), Code is numeral output, and LSB is
Quantization unit, EQFor quantization error.LSB and EQMeet:
Wherein VrefFor benchmark voltage, N is resolution ratio (digit).The final purpose of measurement, which is not lain in, obtains Code, and is
Obtain Vin, therefore following formula is used to calculate VinApproximation
The formula is to export (Code) conversion according to ADC to be measured (Vin) Practical Formula, be referred to as " reduction formula " for the time being.
The error of reduction formula is EQ, exponentially reduce with N increase.
1.2 concrete principles of the invention
The key element of ADC of the present invention is the graphene beam 3, this is a kind of graphene of girder construction that both-end is clamped
Resonator belongs to micro-nano mechanical resonator.Under small amplitude, the mechanical resonator being made of elastomer can be considered second-order linearity system
System, intrinsic frequency are as follows:
Wherein K is equivalent stiffness, and M is equivalent mass.As it can be seen that ω can be controlled by controlling Kn。
The driving circuit 1 is by tested analog quantity AinConvert M signal Am, M signal AmFor voltage or electric current,
Amplitude is much larger than the output equivalent noise of driving circuit 1, and the output less than driving circuit 1 is saturated amplitude, less than modulating mechanism 2
Maximum allowable input range；AmAxial force, i.e. modulation forces F are generated in graphene beam 3 by modulating mechanism 2m；Due to elastomer
The property of (graphene beam 3), FmChange K, to change ωn；But ωnIt is the inherent attribute of elastomer, can not directly observes, therefore
Resonator (graphene beam 3) is set to work in resonant state using closed-loop system, and resonance frequency frIt, can for the running parameter of circuit
With measurement；frMeasurement completed by frequency measurement circuit 7, measurement result be a reflection frNumerical value, referred to as Nf.As it can be seen that tested simulation
Measure AinIt is ultimately converted to numerical quantities Nf, realize analog-digital conversion:
Ain→Am→Fm→ωn→fr→Nf
Wherein, Ain→AmConversion rule, i.e. the input-output characteristic of driving circuit 1 (Simulation scale-up circuit), with first
Function f1It indicates:
Am=f1(Ain)
Am→FmConversion rule, i.e. the input-output characteristic of modulating mechanism 2 (MEMS executing agency), with second function f2
It indicates:
Fm=f2(Am)
Fm→ωnConversion rule, i.e. the characteristic modulated by axial force of the intrinsic frequency of graphene beam 3, with third function f3
It indicates:
ωn=f3(Fm)
It is above-mentioned from AinTo ωnConversion process be known as " core link " of the invention.The quantitative relationship of core link is letter
Number f1、f2、f3Compound function fk:
ωn=f3(f2(f1(Ain)))=fk(Ain)
Function fk" core link function " referred to as of the invention.Take design and technical measures appropriate, it is ensured that fkFor list
Continuous function is adjusted, therefore there are inverse functionsgk" conversion function " referred to as of the invention, is originally inputted for acquiring:
Ain=gk(ωn)
Product of the present invention answers mating offer g when dispatching from the factorykExpression formula (being typically polynomial fitting).
Due to ωnIt is the inherent attribute of elastomer, can not directly observes, therefore uses closed-loop system.Closed-loop system is resonance
The Normal practice of formula sensor, specific implementation is not focus and claim of the invention, for the ease of technical staff's reality
It applies, its specific method is slightly illustrated below.
Feed circuit 5, exciting element 6, Vibration pickup 4 and graphene beam 3 constitute the closed-loop system of mechanical-electric coupling.Feedback electricity
Road 5 guarantees that accumulation signal and pick-up signal meet the amplitude phase condition of closed loop self-excitation, and resonator (graphene beam 3) has machine
The selecting frequency characteristic of tool resonance, therefore closed-loop system is to approach ωnFrequency carry out self-oscillation, which is known as resonance frequency omegar。
According to mechanical resonant and the theory of closed loop circuit, ωrWith ωnDegree of closeness depend on graphene resonator machine
Tool quality factor (Q value).When Q value is sufficiently high, the two is very close: ωr≈ωn, generally use ωrInstead of ωn。
So far, problem is converted into ωrOr frAcquisition, ωr=2 π fr。ωrFor electrical parameter can be surveyed.
frMeasurement belong to technical problem, solved by frequency measurement circuit 7.Since the signal frequency of each point in circuit is all the same,
It can be needed according to circuit design from the difference number of winning the confidence measured frequency in implementation.For brevity, it is described as without exception in the present invention
" measurement pick-up signal AdetFrequency ".
The group of frequency measurement circuit 7 becomes " frequency reference+sequential logical circuit ", the advantage is that:
(1) standard of magnitude comes from frequency reference, has high precision and stability；
(2) measurement of magnitude is based on sequential logical circuit, it is easy to realize high resolution ratio and stability；
(3) sequential logical circuit main body is counter, and with the raising of resolution ratio, circuit scale and complexity only slightly have
It improves.
The technology relative maturity of frequency measurement circuit 7, specific implementation be not focus of the invention, below only brief analysis its
Error.Assuming that selecting frequency measurement scheme appropriate, so that the time used of measurement frequency is negligible, then frequency measurement circuit output can
It is expressed with the formula below without time parameter:
Nf=Cffr+Ef
Wherein CfFor what is determined by specific Technology of Frequency Measurement by Using (including the factors such as frequency reference, frequency division coefficient, number of counter bits)
Proportionality coefficient constant, EfThe error introduced for rounding-off and noise.Ignore Ef, can be by NfCalculate frApproximation
Therefore, following formula evaluation can be used in application system (or resolver 8 of the invention)
This " reduction formula " i.e. of the invention can be used for the algorithm design of application program.It is comprising approximate twice, due to gk
It is continuous function, so:
gk(2πfr *)≈gk(2πfr)
gk(ωr)≈gk(ωn)
gk(ωr)=gk(2πfr)
Ain=gk(ωn)
It can be seen thatI.e.For AinApproximation.
1.3 error sources of the invention
To sum up, error source of the invention includes 3 aspects:
(1) core link error, i.e. gkOr fkError.As function f1、f2、f3Compound function, fkNature is by three
Correspondent entity (Simulation scale-up circuit, MEMS executing agency and graphene resonator, see above) determine.Usually utilize instrument
F is obtained by calibrationkExact formulas (seeing below) at that time, it is assumed that accuracy of instrument is enough, calibration method is correct, the mistake of this formula
Difference is negligible.Therefore, error essentially consists in fkStability after calibrating the moment, that is, correspond to hardware entities circuit parameter,
Structure size, the stability of material properties.
(2) first approximation error, i.e.,Instead of frError.Its root is technical factor, i.e. EfIt is unable to reach 0.
(3) second of approximate error, i.e. frInstead of fnError.Its root is that the ξ of graphene beam 3 is unable to reach 0 or Q value
It is unable to reach ∞.
Above-mentioned error source can be divided into core error and peripheral error.
Peripheral error: including function f1、f2Error and first approximation error.
Core error: respective function f3Error and second of approximate error.
The mature technologies such as peripheral error and Simulation scale-up circuit, MEMS executing agency, frequency measurement circuit are corresponding, can be well
It solves；Core error depends on graphene resonator, and the beneficial features of previously described graphene resonator are just fundamentally
Ensure that this error future can gradually optimize until meeting requirement.
Graphene itself has the function of piezoresistive effect etc, can help the conversion for realizing mechanical quantity and electricity.Graphene is humorous
Vibration device realizes its function by mechanical oscillation, not raying particle itself influences.Certainly, it controls, there is still a need for matched for detection
Circuit.But these circuits are very simple, and biggish transistor size can be used to enhance anti-radiation particle ability.According to the above original
Reason, these circuits of the invention have no effect on overall performance in a certain range of characteristic variations.
2. embodiments of the present invention
The determination of 2.1 core link functions
In practical application, need to know core link function fkSpecific formula (numerical value of all coefficients is determined, can
Calculate the quantitative equation of specific value, rather than principle type), in the hope of gk。
Function f in above-mentioned principle1、f2、f3With the corresponding relationship of hardware entities are as follows:
(1) function f1The corresponding driving circuit 1；
(2) function f2The corresponding modulation unit 2；
(3) function f3The corresponding graphene beam 3.
Theoretically, according to the exact numerical of circuit structure and parameter, mechanical structure and size, material properties parameter, to each
Hardware entities, which are modeled (theoretical modeling or numerical simulation), can be obtained f1、f2、f3Formula (theoretical formula or fitting/interpolation are public
Formula), compound function is calculated up to fk。
In engineering, Practical Formula generally passes through calibration and obtains.As shown in figure 3, exporting one group of tool to the driving circuit 1
There is the A of typical magnitudein, measure each AinCorresponding fn, with AinSequence be X vector, with fnSequence be Y-direction amount, carry out
Data processing finds out fitting/interpolating function as fk。
Calibration needs reference instrument, at least should include: to generate AinStandard signal source (voltage source or current source), measurement fn
Instrument (such as Network Analyzer, or the instrument specially developed, reference can be made to having with " resonant transducer frequency-characteristic measuring-testing instrument "
The open source literature of pass).The data obtained can be handled with MATLAB, according to curve feature using linear fit, nonlinear fitting,
The methods of spline interpolation.
As it was noted above, gkThe error of itself is one of error source of the invention, should try to reduce in implementation.Improve calibration
The performance of instrument improves calibration operation, can reduce initial error.Design temperature compensation tache etc. in circuit or structure,
The influence of drift can be reduced.
In fact, the also quantitative response design success or failure and matching degree of each link of above-mentioned modeling process.It is specific at one
In the development process of product, it usually needs improved according to the result of modeling, to form iteration optimization on this basis.
Design appropriate should be used in specific implementation, guarantee f1、f2、f3It is monotone continuous function, i.e. fkIt is dull continuous
Function, so that there are invertible functions.The physical entities such as circuit, mechanism, structure usually can guarantee continuity, therefore try in design
Guarantee monotonicity.
The embodiment of 2.2 core links
The 1 and function f of driving circuit1It is corresponding, by the analog quantity A of inputinBe converted to intermediate quantity Am.Its technical characteristic
Including three aspects such as circuit types, output area and transfer characteristic.
(1) circuit types: AinAnd AmIt may be voltage or the magnitude of current, it should be according to the type of the two from four kinds of circuit classes
Selection in type is first, such as table 2 (V represents voltage in table, and C represents the magnitude of current).
Four seed types of 2 driving circuit 1 of table
| AinType | AmType | Circuit types |
| V | V | VCVS (voltage amplifier) |
| V | C | VCCS (trsanscondutance amplifier) |
| C | V | CCVS (trans-impedance amplifier) |
| C | C | CCCS (current amplifier) |
(2) output area: AmRange should with the modulating mechanism 2 realize Optimized Matching.
(3) transfer characteristic: linear characteristic may be selected in the driving circuit 1, but excellent to realize with the modulating mechanism 2
Change matching, selection nonlinear characteristic can also be taken the circumstances into consideration, such as log characteristic, broken line characteristic.
The Optimized Matching of above-mentioned output area and transfer characteristic, better simply principle are to make full use of having for circuit and structure
Range is imitated, while avoiding enter into saturation region even reversal zone.More fully optimization should take into account resolution ratio, the spirit of core link entirety
The indexs such as sensitivity, stability, rapidity, overshoot and signal-to-noise ratio.
The 2 and function f of modulating mechanism2It is corresponding, according to AmGenerate the axial action for acting on the graphene beam 3
Power Fm.The executing agency based on electrostatic stress effect or electromagnetism stress effect can be used.Embodiments thereof one are based on electrostatic stress effect
Scheme, such as Fig. 4.Embodiments thereof two are the scheme based on electromagnetism stress effect, such as Fig. 5.
Theoretically, it is required to adhere to electric conductor on the graphene beam 3 using both effects.Electrostatic stress effect needs
To adhere to one among two pole plates on the graphene beam 3, electromagnetism stress effect is needed along axial direction in the graphite
Adhere to the conducting wire of an overall length on alkene beam 3.Modulating mechanism movable plate electrode 22 (dotted portion) in Fig. 4 is to be attached to graphene beam
Conductive film on 3, the modulating mechanism conductor 32 (dotted portion) in Fig. 5 are to be attached to leading for the whole length of graphene beam 3
Conductive film.
In fact, on the one hand since the excellent electric conductivity of graphene itself is without separately adding electric conductor, it is on the other hand additional
Material will affect mechanical performance, therefore usually should directly utilize grapheme material.
At this point, the same physical entity (graphene of girder construction) is logically both the graphene beam 3 and institute
The a part for the modulation unit 2 stated, this is exactly the embodiment of the functionality advantage of grapheme material.
The 3 and function f of graphene beam3It is corresponding, by intermediate quantity AmBe converted to frequency parameter fn, it is that the present invention realizes mould
Analog quantity-digital quantity conversion key link.It is the resonator that the girder construction of substrate is fixed on using graphene as the both ends of material.
Required vibration characteristics (mode of oscillation, intrinsic frequency, Q value are mainly realized in design by the optimization design of structure snd size
Deng).The vibration characteristics under simulation software (such as ANSYS, COMSOL) calculating different structure and size can be used.For nanoscale
Graphene beam, the numerical value calculating sides such as Molecular Dynamics, molecular structure Mechanics Simulation, first-principles calculations can also be used
Method obtains its vibration characteristics.
In manufacture view, single-layer graphene manufacturing method more mature at present includes CVD, removing etc..Process and
The main flawless crystal structure for considering to obtain predetermined size of the selection of technological parameter, and avoid unnecessary curling, fold
Phenomena such as.Manufactured graphene beam both ends should bear certain initial tensile force and guarantee its straightened condition and vibration performance.Graphite
Alkene beam both ends and substrate (silicon) should have reliable contact, guarantee that boundary condition is (practical close to the clamped state on mechanics as far as possible
For between the clamped state between freely-supported).
The embodiment of 2.3 auxiliary links
Auxiliary link of the invention includes: the vibration pickup 4, the feed circuit 5, the vibration excitor 6, described
Frequency measurement circuit 7, the resolver 8.These links belong to the application of related fields mature technology, mainly asking in implementation
Topic is the selection of principle and the determination of basic parameter.
The accumulation signal (hereinafter referred to as pumping signal) that the vibration excitor 6 is exported in the feed circuit 5
Under driving, generating the normal force for acting on the graphene beam 3 to motivate its vibration is a part of closed-loop system.
Its principle, structure and design principle are similar with the modulation unit 2.
It should be noted that being by conjunction two when the modulation unit 2 and the vibration excitor 6 are using same principle
One, i.e. the function of the two is realized on the same physical entity.At this point, the function of the two is to rely on the difference of signal and distinguish
's.Due to AinFrequency be far below fn, with summing circuit by AmThe modulation is applied to after being superimposed with the pumping signal
The respective function of the two can be realized in unit 2, is independent of each other.
The vibration pickup 4 measures the normal vibration of the graphene beam 3, and it is (following to be converted to the pick-up signal
Referred to as detect signal).Available physical effect includes capacity effect, electromagnetic induction effect or piezoresistive effect.Wherein, capacitor is imitated
It should reflect Normal Displacement, electromagnetic induction effect reflects normal velocity, and piezoresistive effect reflects internal stress.Embodiments thereof one be based on
The scheme of capacity effect, such as Fig. 6.Embodiments thereof two are the scheme based on electromagnetic induction effect, such as Fig. 7.Embodiments thereof three
For the scheme based on piezoresistive effect, such as Fig. 8.
Theoretically, it is required to adhere to electric conductor on the graphene beam 3 using capacity effect and electromagnetic induction effect.
Capacity effect needs to adhere to one among two pole plates on the graphene beam 3, and electromagnetic induction effect is needed along axial direction
Adhere to the conducting wire of an overall length on the graphene beam 3.Vibration pickup movable plate electrode 42 (dotted portion) in Fig. 6 is to adhere to
Conductive film on graphene beam 3, the vibration pickup conductor 52 (dotted portion) in Fig. 7 are to be attached to graphene beam 3 all
The conductive film of length.
In fact, on the one hand since the excellent electric conductivity of graphene itself is without separately adding electric conductor, it is on the other hand additional
Material will affect mechanical performance, therefore usually should directly utilize grapheme material.
Graphene itself has piezoresistive effect, is relatively easy to using piezoresistive effect measurement vibration, such as Fig. 8.To enhance pressure drag
Effect, it may be necessary to adhere to some substances on graphene, so-called modification is carried out to graphene.
At this point, the same physical entity (graphene of girder construction) is logically both the graphene beam 3 and institute
The a part for the vibration pickup 4 stated, this is exactly the embodiment of the functionality advantage of grapheme material.
Since the graphene beam size is small (nanometer to micron dimension), minimum (the usually nanometer amount of Oscillation Amplitude
Grade), generated electric signal is also inevitable very faint.Capacitance is about fF~pF magnitude, is needed using weak capacitive detection circuit.
Induced voltage amount is μ V magnitude, is needed using weak voltage detection circuit.Alternation resistance is m Ω magnitude, generally requires utilization
Resistance is converted to voltage by current source, then uses weak voltage detection circuit.Particular technique can refer to having for the field MEMS
Close document.
It should be noted that when the vibration excitor 6 uses electrostatic stress effect, while the vibration pickup 4 uses capacitor
It when effect, will be combined into one, the two is realized in the same physical entity (plate condenser structure), i.e., is worked using single port
Mode.At this point, the vibration pickup 4 is really the variation of the complex impedance shown by alternation capacitive reactance modulated excitation signal
(complex impedance can be mutated when resonance) to measure the variation (whether resonance) of vibrational state indirectly.
It should be noted that when the vibration excitor 6 uses electromagnetism stress effect, while the vibration pickup 4 uses electromagnetism
It when inductive effect, will be combined into one, the two is realized on the same physical entity (conducting wire in magnetic field), that is, uses single port work
Operation mode.At this point, the vibration pickup 4 is really to be superimposed answering of being shown with pumping signal by the inductive signal in conducting wire
The variation (complex impedance can be mutated when resonance) of impedance to measure the variation (whether resonance) of vibrational state indirectly.
Single port operating mode can simplify the realization of structure design and processes, but its signal processing is problem, need to be according to reality
Design further investigation, related document may provide some helps with " micromechanical resonator single port operating mode ".
For the problem for avoiding above-mentioned single port operating mode, the combination of following excitation effect-detection effect can be used.Have
Document in terms of pass " electromagnet-piezo-resistance type micro mechanical resonant beam structure " may provide help to principle therein is understood.
Four kinds of 3 excitation effects of table-detection effect combinations
| Vibration excitor 6 | Vibration pickup 4 | |
| Group unification | Electrostatic stress effect | Electromagnetic induction effect |
| Combination two | Electromagnetism stress effect | Capacity effect |
| Combination three | Electrostatic stress effect | Piezoresistive effect |
| Combination four | Electromagnetism stress effect | Piezoresistive effect |
The technical characteristic of combination 1: 3 both ends of graphene beam are separately connected the input terminal of two operational amplifiers, and two
The in-phase end of a operational amplifier is grounded, and the output of two amplifiers carries out difference processing, and operational amplifier can be to put across resistance
Big device, the accumulation signal are applied between the fixed plate and ground of the plate condenser structure.Such as Fig. 9.
The principle of combination 1: the graphene beam 3 described at this time is both the movable plate electrode of the vibration excitor 6 and described picks up
The conducting wire of vibration device 4.Pumping signal is applied on fixed plate, is capacitively coupled to movable plate electrode (the graphene beam 3), is become
Coupled interference.But it is identical in the interference that 3 both ends of graphene beam generate, it is offset after calculus of differences.After calculus of differences
The induced voltage that net output is only generated by conducting wire (the graphene beam 3) vibration, to realize that pumping signal and detection are believed
Number separation.
The technical characteristic of combination 2: the accumulation signal uses the both-end generated by differential symmetry current source symmetrically electric
Signal is flowed, 3 both ends of graphene beam are separately connected two output ends of differential symmetry current source, the plate condenser
The fixed plate of structure connects weak capacitive detection circuit.Such as Figure 10.
The principle of combination 2: the graphene beam 3 described at this time be both the vibration excitor 6 conducting wire and the pick-up
The movable plate electrode of device 4.Pumping signal (magnitude of current) is applied on conducting wire (i.e. the graphene beam 3), since conductor resistance can produce
Raw voltage, this voltage are capacitively coupled to fixed plate, become coupled interference.But graphene conductive is fabulous, what electric current generated
Voltage is minimum, and uses differential symmetry current source, and the voltage that each point generates on conducting wire (i.e. the graphene beam 3) is also pair
Claim, gross effect is cancelled out each other.It is looked over from fixed plate side, movable plate electrode (i.e. the graphene beam 3) is equivalent to ground connection
Equipotentiality body, therefore can be using the weak capacitive detection circuit for ground capacity, from the change of fixed plate side detection capacitance
Change, to realize pumping signal and detect the separation of signal.
The technical characteristic of combination 3: 3 both ends of graphene beam are separately connected the input terminal of two operational amplifiers, and two
The in-phase end of a operational amplifier connects the constant voltage reference of the small voltage of two phase difference constants, the output of two amplifiers respectively
Difference and blocking processing are carried out, operational amplifier can be trans-impedance amplifier, and the accumulation signal is applied to the plate electricity
On the fixed plate of structure of container.Such as Figure 11.
The principle of combination 3: the graphene beam 3 described at this time is both the movable plate electrode of the vibration excitor 6 and described picks up
The pressure drag component of vibration device 4.Pumping signal is applied on fixed plate, is capacitively coupled to movable plate electrode (the graphene beam 3),
As coupled interference.But it is identical in the interference that 3 both ends of graphene beam generate, it is offset after calculus of differences.Calculus of differences
Rear net output is only because the variation of the resistance value of pressure drag component (the graphene beam 3) and the output that generates.Due to two
The small voltage of the in-phase end phase difference constant of operational amplifier, according to " empty short " principle, two reverse side also differ same small electricity
Pressure.This small voltage is added in the both ends of pressure drag component, generates corresponding electric current.According to Ohm's law, constant voltage and alternation resistance value
Alternating current is generated, and is converted to alternating voltage through trans-impedance amplifier, to realize pumping signal and detect the separation of signal.
The technical characteristic of combination 4: the accumulation signal uses the both-end symmetrical current generated by differential symmetry current source
Signal, 3 both ends of graphene beam are separately connected two input terminals based on operational amplifier, two operational amplifiers it is same
Phase end connects the constant voltage reference of the small voltage of two phase difference constants respectively, and the output of two amplifiers carries out at difference and blocking
Reason, operational amplifier can be trans-impedance amplifier.Such as Figure 12.
The principle of combination 4: the graphene beam 3 described at this time be both the vibration excitor 6 conducting wire and the pick-up
The pressure drag component of device 4.Pumping signal (magnitude of current) is applied on conducting wire (i.e. the graphene beam 3), due to conductor resistance meeting
Voltage is generated, this voltage is capacitively coupled to fixed plate, becomes coupled interference.But graphene conductive is fabulous, and electric current generates
Voltage it is minimum, and use differential symmetry current source, the voltage that each point generates on conducting wire (i.e. described graphene beam 3) is also
Symmetrically, gross effect is cancelled out each other.The resistance only because pressure drag component (the graphene beam 3) is exported only after calculus of differences
The variation of value and the output generated.It is former according to " empty short " due to the small voltage of the in-phase end phase difference constant of two operational amplifiers
Reason, two reverse side also differ same small voltage.This small voltage is added in the both ends of pressure drag component, generates corresponding electric current.Root
According to Ohm's law, constant voltage and alternation resistance value generate alternating current, and are converted to alternating voltage through trans-impedance amplifier, thus real
Existing pumping signal and the separation for detecting signal.
The above are to a kind of description of graphene resonant mode analog to digital converter unit provided by the present invention, for this field
Technical staff, thought according to an embodiment of the present invention, there will be changes in the specific implementation manner and application range, comprehensive
On, the contents of this specification are not to be construed as limiting the invention.
Claims (9)
1. a kind of graphene resonant mode analog-digital converter, it is characterised in that: including driving circuit (1), modulating mechanism (2), graphite
Alkene beam (3), vibration pickup (4), feed circuit (5), vibration excitor (6), frequency measurement circuit (7) and resolver (8), analog-digital converter is defeated
Enter including being tested analog quantity (Ain) and sampling clock (Ks), analog-digital converter output includes digital quantity (Dout), it is tested analog quantity
(Ain) it is analog electrical signal, sampling clock (Ks) it is dagital clock signal, numeral output (Dout) it is digital quantity；Driving circuit (1)
For amplifying circuit, tested analog quantity (A is inputtedin), export M signal (Am)；Modulating mechanism (2) is electromechanical actuator, input
M signal (Am), generate modulation forces (Fm)；M signal (Am) it is voltage or electric current, amplitude is much larger than driving circuit (1)
Output equivalent noise, the output for being less than driving circuit (1) are saturated amplitude, are less than the maximum allowable input range of modulating mechanism (2)；
Graphene beam (3) is the clamped beam resonator of the both-end that is manufactured with grapheme material；Modulation forces (Fm) it is that edge is applied axially to stone
The power of black alkene beam, exciting force (Fexi) it is the alternating force that graphene beam is applied to along normal direction；Vibration pickup (4) is mechanical quantity sensing
Device experiences the vibration parameters (P of graphene beam (3)v), export pick-up signal (Adet), vibration parameters (Pv) it include graphene beam
Speed, acceleration and displacement, pick-up signal (Adet) be and vibration parameters (Pv) corresponding electric signal；Feed circuit (5) inputs institute
Pick-up signal (the A stateddet), export accumulation signal (Aexi), accumulation signal (Aexi) be and pick-up signal (Adet) corresponding voltage
Or electric current；Vibration excitor (6) is in accumulation signal (Aexi) the corresponding exciting force (F of the lower generation of controlexi)；When frequency measurement circuit (7) includes
Sequence logic circuit further includes frequency reference device or has frequency reference input terminal, inputs pick-up signal (Adet), output frequency
Numerical value (Nf)；Frequency values (Nf) it is (t at every sampling momentsi) pick-up signal (Adet) frequency measured value；Sampling instant
(tsi) it is sampling clock (Ks) as defined in a series of time slices；Resolver (8) is numerical algorithm, by frequency values (Nf) generation
Enter conversion function (gk) value is found a function, with obtained functional value for the numeral output (Dout) numerical value；Conversion function
(gk) it is the reversible real function of unitary.
2. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: the modulating mechanism (2)
The plate condenser structure formed for modulating mechanism fixed plate (21) and modulating mechanism movable plate electrode (22)；Modulating mechanism fixed plate
It (21) is fixed plane conductor；Modulating mechanism movable plate electrode (22) is the conductive film for being attached to the graphene beam (3), or
Borrow graphene beam (3) itself；M signal (the Am) it is voltage signal, it is applied to modulating mechanism fixed plate (21) and adjusts
Between mechanism movable plate electrode (22) processed；As the tested analog quantity (Ain) it is voltage signal, the driving circuit (1) is voltage
Amplifying circuit；As tested analog quantity (Ain) it is current signal, driving circuit (1) is across resistance amplifying circuit.
3. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: the modulating mechanism (2)
Including modulating mechanism magnet (31) and modulating mechanism conductor (32)；The magnetic induction intensity that modulating mechanism magnet (31) generates includes to wear
Cross the graphene beam (3) and the component axial and orthogonal normal direction with it；Modulating mechanism conductor (32) uses and is attached to stone
The conductive film of the whole length of black alkene beam (3), or borrow graphene beam (3) itself；M signal (the Am) it is that electric current is believed
Number, flow through modulating mechanism conductor (32)；As the tested analog quantity (Ain) it is current signal, the driving circuit (1) is
Current amplification circuit；As tested analog quantity (Ain) it is voltage signal, driving circuit (1) is mutual conductance amplifying circuit.
4. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: the vibration pickup (4) is
The plate condenser structure of vibration pickup fixed plate (41) and vibration pickup movable plate electrode (42) composition；Vibration pickup fixed plate (41) is to fix
Plane conductor；Vibration pickup movable plate electrode (42) is using the conductive film for being attached to the graphene beam (3), or borrows graphene
Beam (3) itself；Capacitor of the pick-up signal between vibration pickup fixed plate (41) and vibration pickup movable plate electrode (42).
5. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: vibration pickup (4) packet
Include vibration pickup magnet (51) and vibration pickup conductor (52)；The magnetic induction intensity that vibration pickup magnet (51) generates includes across described
Graphene beam (3) and the component axial and orthogonal normal direction with it；Vibration pickup conductor (52) is complete using graphene beam (3) is attached to
The conductive film of minister's degree, or borrow graphene beam (3) itself；The pick-up signal is the electricity at vibration pickup conductor (52) both ends
Pressure.
6. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: the vibration pickup (4) is
Pressure drag component (61)；Pressure drag component (61) uses the film with piezoresistive effect for being attached to the graphene beam (3), or borrows
With graphene beam (3) itself；The pick-up signal is the resistance of pressure drag component (61).
7. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: the sampling clock (Ks)
For square-wave signal；Sampling instant (the tsi) each low level period of square wave is taken, or when taking each high level of square wave
Section, perhaps taking to start from the upper time slice for jumping edge of each of square wave or take starts from the time slice that edge is jumped under each of square wave.
8. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: define the M signal
(Am) about the tested analog quantity (Ain) function be first function, define the modulation forces (Fm) about in described
Between signal (Am) function be second function, define the normal vibration intrinsic frequency (ω of the graphene beam (3)n) about tune
Power (F processedm) function be third function；Circuit model and the modulating mechanism (2) based on the driving circuit (1)
Physical model finds out first function；Mechanical model based on the graphene beam (3) finds out second function；Based on the stone
The vibration characteristics of black alkene beam (3) finds out third function；Find out the inverse of the compound function of first function, second function and third function
Function obtains the conversion function (gk)。
9. graphene resonant mode analog-digital converter according to claim 1, it is characterised in that: in the tested analog quantity
(Ain) magnitude within the scope of take one group of typical magnitude, successively constitute X vector；Mould is exported one by one according to X vector with signal source instrument
Analog quantity, as tested analog quantity (Ain), while with the intrinsic frequency of Network Analyzer measurement graphene beam (3) normal vibration mode
Rate；All measured values successively constitute Y-direction amount；Using X vector as independent variable, fitting/interpolating function is sought by dependent variable of Y-direction amount, is made
For FM Function (fk)；Seek the FM Function (fk) inverse function, as the conversion function (gk)。
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