CN109346612A - A kind of solar battery and preparation method thereof with multilayer organic film - Google Patents
A kind of solar battery and preparation method thereof with multilayer organic film Download PDFInfo
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Abstract
The present invention relates to a kind of solar battery and preparation method thereof with multilayer organic film, method includes the following steps: forming multiple arranged in parallel and spaced first groove in the upper surface of N-type silicon chip；Multiple first grooves and multiple first convex blocks of the upper surface of the N-type silicon chip are ground, so that the base angle of first groove is the first arc angle, and two angles at the top of first convex block are made to be the second arc angle；P3HT composite layer, PEDOT:PSS composite conductive layers and positive gate electrode are formed in the upper surface of the N-type silicon chip；Layer of lithium fluoride and back side aluminium electrode are prepared in the lower surface of the N-type silicon chip.Solar battery of the invention has excellent photoelectric conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of solar-electricity with multilayer organic film
Pond and preparation method thereof.
Background technique
It is increasingly depleted with mineral resources such as petroleum, coals, lead to jumping up for phase dutiable value, and then obstruction section
The development and progress of skill.Solar energy limits small, green cleaning, safety non-pollution since its is inexhaustible, nexhaustible, regional
The advantages that be increasingly valued by people.It is benefit based on the solar battery that photovoltaic effect converts the solar into electric energy
With one of the main path of solar energy.However, the solar battery being commercialized at present substantially uses crystalline silicon or inorganic chemical
For object semiconductor as active layer material, preparation process is complicated, at high cost.On the other hand, using organic semiconducting materials as activity
Although the solar battery of layer have cheap material, solvable liquefaction preparation, annealing temperature it is low, can large area flexible make etc. it is excellent
Point, however, there are also carrier mobilities it is low, light abstraction width is narrow the defects of, and then limit organic solar batteries
Photoelectric conversion efficiency.Organic inorganic hybridization solar battery combine inorganic material high mobility and organic material can solution
Change the advantages such as preparation, can theoretically obtain the solar battery of high efficiency, low cost, and then causes the extensive pass of people
Note.
Summary of the invention
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, a kind of solar energy with multilayer organic film is provided
Battery and preparation method thereof.
To achieve the above object, the technical solution adopted by the present invention is that:
A kind of preparation method of the solar battery with multilayer organic film, comprising the following steps:
1) N-type silicon chip is provided, the upper surface of the N-type silicon chip is burnishing surface, is formed in the upper surface of the N-type silicon chip
Multiple arranged in parallel and spaced first groove, the section of first groove are isosceles triangle, adjacent described first
One first convex block is respectively formed between groove, the interface of first convex block is isosceles trapezoid；
2) then multiple first grooves to the upper surface of the N-type silicon chip and multiple first convex blocks carry out
Milled processed, so that the base angle of first groove is the first arc angle, the radius of curvature of first arc angle is that 60-80 is micro-
Rice, and two angles at the top of first convex block is made to be the second arc angle, the radius of curvature of second arc angle is
25-50 microns；
3) solution containing ethanol tantalum is then sprayed in the upper and lower surfaces of the N-type silicon chip, and carries out first
Secondary annealing is respectively formed tantalum oxide layers with the upper and lower surfaces in the N-type silicon chip；
4) then contain the first chlorobenzene solution of P3HT in the upper surface spin coating of the N-type silicon chip, first chlorobenzene is molten
The concentration of P3HT described in liquid is 0.5-1mg/ml, then carries out second and makes annealing treatment；
5) then contain the second chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in the second chlorobenzene solution is 0.8-1.2mg/ml, and the concentration of the silver nano-grain is 0.1-
Then 0.15mg/ml carries out third time annealing；
6) then contain the third chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in third chlorobenzene solution is 0.6-0.9mg/ml, and the concentration of the silver nano-grain is 0.15-
Then 0.2mg/ml carries out the 4th annealing；
7) then contain the tetrachloro benzole soln of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in tetrachloro benzole soln is 0.3-0.5mg/ml, and the concentration of the silver nano-grain is 0.2-
Then 0.25mg/ml carries out the 5th annealing；
8) then contain the first PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.2-0.3mg/ml, then carries out the 6th annealing；
9) then contain the 2nd PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.3-0.4mg/ml, then carries out the 7th annealing；
10) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.4-0.5mg/ml, then carries out the 8th annealing；
11) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.5-0.6mg/ml, then carries out the 9th annealing；
12) positive gate electrode then is prepared in the upper surface of the N-type silicon chip；
13) layer of lithium fluoride and back side aluminium electrode then are prepared in the lower surface of the N-type silicon chip.
Preferably, the apex angle of the isosceles triangle is 60 ° -90 °, first groove in the step (1)
Depth is 120-180 microns.
Preferably, the concentration of ethanol tantalum is 2-4mg/ in the solution containing ethanol tantalum in the step (3)
Ml, it is described first annealing specifically comprises the processes of: 450-550 DEG C at a temperature of make annealing treatment 15-25 minutes.
Preferably, the revolving speed of spin coating is 3500-5500 revs/min in the step (4-7), the time of spin coating
It is 1-3 minutes, the temperature of the second, third, fourth, fifth annealing is 120-150 DEG C, second of the annealing
The time of processing is 3-5 minute, and the time of third time annealing is 6-9 minutes, make annealing treatment for described 4th time when
Between be 9-12 minute, it is described 5th time annealing time be 10-20 minutes.
Preferably, the partial size of the silver nano-grain is 3-6 nanometers in the step (5-7).
Preferably, the length of the silver nanowires is 10-20 microns, the silver nanoparticle in the step (8-11)
The diameter of line is 10-25 nanometers, and the revolving speed of spin coating is 3000-4000 revs/min, and the time of spin coating is 2-4 minutes, described
The temperature of six, the seven, the eight, the 9th annealings is 110-130 DEG C, and the time of the 6th annealing is 2-4
Minute, the time of the 7th annealing is 3-6 minutes, and the time of the 8th annealing is 5-10 minutes, institute
The time for stating the 9th annealing is 10-15 minutes.
Preferably, in the step (12), the material of the positive gate electrode is silver, copper or aluminium, it is described just
Face gate electrode with a thickness of 200-400 nanometers；In the step (13), the layer of lithium fluoride with a thickness of 1-2 nanometers, the back side
The aluminium of electrode, the rear electrode with a thickness of 200-400 nanometers.
The present invention also proposes the solar battery with multilayer organic film using above method preparation.
Compared with the prior art, the invention has the following advantages:
In the preparation process of solar battery with multilayer organic film of the invention, by the N-type silicon chip
The first groove is arranged in upper surface, and first groove and first convex block progress to the upper surface of the N-type silicon chip
Milled processed so that the base angle of the first groove is the first arc angle, and makes two angles at the top of first convex block
It is the second arc angle, and advanced optimizes the radius of curvature of the first arc angle and the second arc angle, allows in N-type silicon chip
Surface forms high quality organic film.Pass through the distribution situation of silver nano-grain in P3HT layers of optimization of generation type, P3HT layers
And the annealing time in each step, one layer of fine and close P3HT layer is obtained, and then improve P3HT layers of filming performance and conductivity,
Pass through moving back in the distribution situation and each step of silver nanowires in PEDOT:PSS layers of optimization of generation type, PEDOT:PSS layers
The fiery time obtains the PEDOT:PSS layer of a high quality, further increase corresponding solar battery short circuit current and filling because
Son.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the solar battery with multilayer organic film of the invention.
Specific embodiment
The present invention proposes a kind of preparation method of solar battery with multilayer organic film, comprising the following steps:
1) N-type silicon chip is provided, the upper surface of the N-type silicon chip is burnishing surface, is formed in the upper surface of the N-type silicon chip
Multiple arranged in parallel and spaced first groove, the section of first groove are isosceles triangle, adjacent described first
One first convex block is respectively formed between groove, the interface of first convex block is isosceles trapezoid；
2) then multiple first grooves to the upper surface of the N-type silicon chip and multiple first convex blocks carry out
Milled processed, so that the base angle of first groove is the first arc angle, the radius of curvature of first arc angle is that 60-80 is micro-
Rice, and two angles at the top of first convex block is made to be the second arc angle, the radius of curvature of second arc angle is
25-50 microns；
3) solution containing ethanol tantalum is then sprayed in the upper and lower surfaces of the N-type silicon chip, and carries out first
Secondary annealing is respectively formed tantalum oxide layers with the upper and lower surfaces in the N-type silicon chip；
4) then contain the first chlorobenzene solution of P3HT in the upper surface spin coating of the N-type silicon chip, first chlorobenzene is molten
The concentration of P3HT described in liquid is 0.5-1mg/ml, then carries out second and makes annealing treatment；
5) then contain the second chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in the second chlorobenzene solution is 0.8-1.2mg/ml, and the concentration of the silver nano-grain is 0.1-
Then 0.15mg/ml carries out third time annealing；
6) then contain the third chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in third chlorobenzene solution is 0.6-0.9mg/ml, and the concentration of the silver nano-grain is 0.15-
Then 0.2mg/ml carries out the 4th annealing；
7) then contain the tetrachloro benzole soln of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in tetrachloro benzole soln is 0.3-0.5mg/ml, and the concentration of the silver nano-grain is 0.2-
Then 0.25mg/ml carries out the 5th annealing；
8) then contain the first PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.2-0.3mg/ml, then carries out the 6th annealing；
9) then contain the 2nd PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.3-0.4mg/ml, then carries out the 7th annealing；
10) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.4-0.5mg/ml, then carries out the 8th annealing；
11) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.5-0.6mg/ml, then carries out the 9th annealing；
12) positive gate electrode then is prepared in the upper surface of the N-type silicon chip；
13) layer of lithium fluoride and back side aluminium electrode then are prepared in the lower surface of the N-type silicon chip.
Wherein, in the step (1), the apex angle of the isosceles triangle is 60 ° -90 °, the depth of first groove
It is 120-180 microns.In the step (3), the concentration of ethanol tantalum is 2-4mg/ml, institute in the solution containing ethanol tantalum
State the first annealing specifically comprises the processes of: 450-550 DEG C at a temperature of make annealing treatment 15-25 minutes.In the step (4-
7) in, the revolving speed of spin coating is 3500-5500 revs/min, and the time of spin coating is 1-3 minutes, it is described second, third, the 4th,
The temperature of 5th annealing is 120-150 DEG C, and the time of second of annealing is 3-5 minutes, the third time
The time of annealing is 6-9 minutes, and the time of the 4th annealing is 9-12 minutes, the 5th annealing
Time be 10-20 minutes.In the step (5-7), the partial size of the silver nano-grain is 3-6 nanometers.In the step
In (8-11), the length of the silver nanowires is 10-20 microns, and the diameter of the silver nanowires is 10-25 nanometers, and spin coating turns
Speed is 3000-4000 revs/min, and the time of spin coating is 2-4 minutes, the six, the seven, the eight, the 9th annealing
Temperature be 110-130 DEG C, it is described 6th time annealing time be 2-4 minute, it is described 7th time make annealing treatment when
Between be 3-6 minute, it is described 8th time annealing time be 5-10 minute, it is described 9th time make annealing treatment time be 10-
15 minutes.In the step (12), the material of the positive gate electrode is silver, copper or aluminium, the positive gate electrode
With a thickness of 200-400 nanometers；In the step (13), the layer of lithium fluoride with a thickness of 1-2 nanometers, the aluminium of rear electrode,
The rear electrode with a thickness of 200-400 nanometers.
As shown in Figure 1, the present invention proposes a kind of solar battery with multilayer organic film, it is described to have multilayer organic
The solar battery of film includes positive gate electrode 1, PEDOT:PSS composite conductive layers 2, P3HT composite layer 3, N-type from top to bottom
Silicon wafer 4, layer of lithium fluoride 5, back side aluminium electrode 6, wherein the upper surface of the N-type silicon chip 4 has the first groove 41.
Embodiment 1:
A kind of preparation method of the solar battery with multilayer organic film, comprising the following steps:
1) N-type silicon chip is provided, the upper surface of the N-type silicon chip is burnishing surface, is formed in the upper surface of the N-type silicon chip
Multiple arranged in parallel and spaced first groove, the section of first groove are isosceles triangle, adjacent described first
One first convex block is respectively formed between groove, the interface of first convex block is isosceles trapezoid；
2) then multiple first grooves to the upper surface of the N-type silicon chip and multiple first convex blocks carry out
Milled processed, so that the base angle of first groove is the first arc angle, the radius of curvature of first arc angle is 70 microns,
And two angles at the top of first convex block is made to be the second arc angle, the radius of curvature of second arc angle is 40 micro-
Rice；
3) solution containing ethanol tantalum is then sprayed in the upper and lower surfaces of the N-type silicon chip, and carries out first
Secondary annealing is respectively formed tantalum oxide layers with the upper and lower surfaces in the N-type silicon chip；
4) then contain the first chlorobenzene solution of P3HT in the upper surface spin coating of the N-type silicon chip, first chlorobenzene is molten
The concentration of P3HT described in liquid is 0.75mg/ml, then carries out second and makes annealing treatment；
5) then contain the second chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in the second chlorobenzene solution is 1mg/ml, and the concentration of the silver nano-grain is 0.12mg/ml, then into
Row third time makes annealing treatment；
6) then contain the third chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in third chlorobenzene solution is 0.8mg/ml, and the concentration of the silver nano-grain is 0.18mg/ml, then
Carry out the 4th annealing；
7) then contain the tetrachloro benzole soln of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in tetrachloro benzole soln is 0.4mg/ml, and the concentration of the silver nano-grain is 0.2mg/ml, then
Carry out the 5th annealing；
8) then contain the first PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.25mg/ml, then carries out the 6th annealing；
9) then contain the 2nd PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.35mg/ml, then carries out the 7th annealing；
10) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.45mg/ml, then carries out the 8th annealing；
11) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.55mg/ml, then carries out the 9th annealing；
12) positive gate electrode then is prepared in the upper surface of the N-type silicon chip；
13) layer of lithium fluoride and back side aluminium electrode then are prepared in the lower surface of the N-type silicon chip.
Wherein, in the step (1), the apex angle of the isosceles triangle is 80 °, and the depth of first groove is
150 microns.In the step (3), the concentration of ethanol tantalum is 3mg/ml in the solution containing ethanol tantalum, and described first moves back
Fire processing specifically comprises the processes of: 500 DEG C at a temperature of make annealing treatment 20 minutes.In the step (4-7), the revolving speed of spin coating
It is 4500 revs/min, the time of spin coating is 2 minutes, and the temperature of the second, third, fourth, fifth annealing is
140 DEG C, the time of second annealing is 4 minutes, and the time of the third time annealing is 8 minutes, described the
The time of four annealings is 10 minutes, and the time of the 5th annealing is 15 minutes.At the step (5-7)
In, the partial size of the silver nano-grain is 4 nanometers.In the step (8-11), the length of the silver nanowires is 15 microns,
The diameter of the silver nanowires is 20 nanometers, and the revolving speed of spin coating is 3500 revs/min, and the time of spin coating is 3 minutes, described
The temperature of six, the seven, the eight, the 9th annealings is 120 DEG C, and the time of the 6th annealing is 3 minutes, institute
The time for stating the 7th annealing is 5 minutes, and the time of the 8th annealing is 7 minutes, the 9th annealing
The time of processing is 12 minutes.In the step (12), the material of the positive gate electrode is silver, the positive gate electrode
With a thickness of 300 nanometers；In the step (13), the layer of lithium fluoride with a thickness of 1.5 nanometers, the aluminium of rear electrode, institute
State rear electrode with a thickness of 300 nanometers.
The photoelectric conversion efficiency of the solar battery with multilayer organic film of above method preparation is 16.2%.
Embodiment 2
A kind of preparation method of the solar battery with multilayer organic film, comprising the following steps:
1) N-type silicon chip is provided, the upper surface of the N-type silicon chip is burnishing surface, is formed in the upper surface of the N-type silicon chip
Multiple arranged in parallel and spaced first groove, the section of first groove are isosceles triangle, adjacent described first
One first convex block is respectively formed between groove, the interface of first convex block is isosceles trapezoid；
2) then multiple first grooves to the upper surface of the N-type silicon chip and multiple first convex blocks carry out
Milled processed, so that the base angle of first groove is the first arc angle, the radius of curvature of first arc angle is 60 microns,
And two angles at the top of first convex block is made to be the second arc angle, the radius of curvature of second arc angle is 25 micro-
Rice；
3) solution containing ethanol tantalum is then sprayed in the upper and lower surfaces of the N-type silicon chip, and carries out first
Secondary annealing is respectively formed tantalum oxide layers with the upper and lower surfaces in the N-type silicon chip；
4) then contain the first chlorobenzene solution of P3HT in the upper surface spin coating of the N-type silicon chip, first chlorobenzene is molten
The concentration of P3HT described in liquid is 0.5mg/ml, then carries out second and makes annealing treatment；
5) then contain the second chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in the second chlorobenzene solution is 0.8mg/ml, and the concentration of the silver nano-grain is 0.1mg/ml, then
Carry out third time annealing；
6) then contain the third chlorobenzene solution of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in third chlorobenzene solution is 0.6mg/ml, and the concentration of the silver nano-grain is 0.15mg/ml, then
Carry out the 4th annealing；
7) then contain the tetrachloro benzole soln of P3HT and silver nano-grain, institute in the upper surface spin coating of the N-type silicon chip
The concentration for stating P3HT described in tetrachloro benzole soln is 0.5mg/ml, and the concentration of the silver nano-grain is 0.25mg/ml, then
Carry out the 5th annealing；
8) then contain the first PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.2mg/ml, then carries out the 6th annealing；
9) then contain the 2nd PEDOT:PSS solution of silver nanowires, the silver in the upper surface spin coating of the N-type silicon chip
The concentration of nano wire is 0.3mg/ml, then carries out the 7th annealing；
10) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.4mg/ml, then carries out the 8th annealing；
11) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, it is described
The concentration of silver nanowires is 0.5mg/ml, then carries out the 9th annealing；
12) positive gate electrode then is prepared in the upper surface of the N-type silicon chip；
13) layer of lithium fluoride and back side aluminium electrode then are prepared in the lower surface of the N-type silicon chip.
Wherein, in the step (1), the apex angle of the isosceles triangle is 90 °, and the depth of first groove is
120 microns.In the step (3), the concentration of ethanol tantalum is 2mg/ml in the solution containing ethanol tantalum, and described first moves back
Fire processing specifically comprises the processes of: 450 DEG C at a temperature of make annealing treatment 25 minutes.In the step (4-7), the revolving speed of spin coating
It is 3500 revs/min, the time of spin coating is 3 minutes, and the temperature of the second, third, fourth, fifth annealing is
150 DEG C, the time of second annealing is 3 minutes, and the time of the third time annealing is 6 minutes, described the
The time of four annealings is 9 minutes, and the time of the 5th annealing is 12 minutes.In the step (5-7),
The partial size of the silver nano-grain is 3 nanometers.In the step (8-11), the length of the silver nanowires is 20 microns, institute
The diameter for stating silver nanowires is 25 nanometers, and the revolving speed of spin coating is 3000 revs/min, and the time of spin coating is 4 minutes, described the
Six, the temperature of the seven, the eight, the 9th annealings is 110 DEG C, and the time of the 6th annealing is 4 minutes, described
The time of 7th annealing is 6 minutes, and the time of the 8th annealing is 10 minutes, at the 9th annealing
The time of reason is 15 minutes.In the step (12), the material of the positive gate electrode is copper, the positive gate electrode
With a thickness of 400 nanometers；In the step (13), the layer of lithium fluoride with a thickness of 2 nanometers, the aluminium of rear electrode, the back
Face electrode with a thickness of 400 nanometers.
The photoelectric conversion efficiency of the solar battery with multilayer organic film of above method preparation is 15.4%.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
1. a kind of preparation method of the solar battery with multilayer organic film, it is characterised in that: the following steps are included:
1) N-type silicon chip is provided, the upper surface of the N-type silicon chip is burnishing surface, is formed in the upper surface of the N-type silicon chip multiple
Arranged in parallel and spaced first groove, the section of first groove are isosceles triangle, adjacent first groove
Between be respectively formed one first convex block, the interface of first convex block is isosceles trapezoid；
2) then multiple first grooves and multiple first convex blocks of the upper surface of the N-type silicon chip are ground
Processing, so that the base angle of first groove is the first arc angle, the radius of curvature of first arc angle is 60-80 microns,
And two angles at the top of first convex block is made to be the second arc angle, the radius of curvature of second arc angle is 25-
50 microns；
3) solution containing ethanol tantalum is then sprayed in the upper and lower surfaces of the N-type silicon chip, and move back for the first time
Fire processing, is respectively formed tantalum oxide layers with the upper and lower surfaces in the N-type silicon chip；
4) then contain the first chlorobenzene solution of P3HT in the upper surface spin coating of the N-type silicon chip, in first chlorobenzene solution
The concentration of the P3HT is 0.5-1mg/ml, then carries out second and makes annealing treatment；
5) then contain the second chlorobenzene solution of P3HT and silver nano-grain in the upper surface spin coating of the N-type silicon chip, described
The concentration of P3HT described in dichlorobenzene solution is 0.8-1.2mg/ml, and the concentration of the silver nano-grain is 0.1-0.15mg/ml,
Then third time annealing is carried out；
6) then contain the third chlorobenzene solution of P3HT and silver nano-grain in the upper surface spin coating of the N-type silicon chip, described
The concentration of P3HT described in trichlorobenzene solution is 0.6-0.9mg/ml, and the concentration of the silver nano-grain is 0.15-0.2mg/ml,
Then the 4th annealing is carried out；
7) then contain the tetrachloro benzole soln of P3HT and silver nano-grain in the upper surface spin coating of the N-type silicon chip, described
The concentration of P3HT described in tetrachloro benzole soln is 0.3-0.5mg/ml, and the concentration of the silver nano-grain is 0.2-0.25mg/ml,
Then the 5th annealing is carried out；
8) then contain the first PEDOT:PSS solution of silver nanowires, the silver nanoparticle in the upper surface spin coating of the N-type silicon chip
The concentration of line is 0.2-0.3mg/ml, then carries out the 6th annealing；
9) then contain the 2nd PEDOT:PSS solution of silver nanowires, the silver nanoparticle in the upper surface spin coating of the N-type silicon chip
The concentration of line is 0.3-0.4mg/ml, then carries out the 7th annealing；
10) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, the silver is received
The concentration of rice noodles is 0.4-0.5mg/ml, then carries out the 8th annealing；
11) then contain the first PEDOT:PSS solution of silver nanowires in the upper surface spin coating of the N-type silicon chip, the silver is received
The concentration of rice noodles is 0.5-0.6mg/ml, then carries out the 9th annealing；
12) positive gate electrode then is prepared in the upper surface of the N-type silicon chip；
13) layer of lithium fluoride and back side aluminium electrode then are prepared in the lower surface of the N-type silicon chip.
2. the preparation method of the solar battery according to claim 1 with multilayer organic film, it is characterised in that:
In the step (1), the apex angle of the isosceles triangle is 60 ° -90 °, and the depth of first groove is 120-180 microns.
3. the preparation method of the solar battery according to claim 1 with multilayer organic film, it is characterised in that:
In the step (3), the concentration of ethanol tantalum is 2-4mg/ml in the solution containing ethanol tantalum, first annealing
Specifically comprises the processes of: 450-550 DEG C at a temperature of make annealing treatment 15-25 minutes.
4. the solar battery according to claim 1 with multilayer organic film, it is characterised in that: in the step
In (4-7), the revolving speed of spin coating is 3500-5500 revs/min, and the time of spin coating is 1-3 minutes, it is described second, third,
Four, the temperature of the 5th annealing is 120-150 DEG C, and the time of second of annealing is 3-5 minutes, the third
The time of secondary annealing is 6-9 minutes, and the time of the 4th annealing is 9-12 minutes, at the 5th annealing
The time of reason is 10-20 minutes.
5. the solar battery according to claim 4 with multilayer organic film, it is characterised in that: in the step
In (5-7), the partial size of the silver nano-grain is 3-6 nanometers.
6. the preparation method of the solar battery according to claim 1 with multilayer organic film, it is characterised in that:
In the step (8-11), the length of the silver nanowires is 10-20 microns, and the diameter of the silver nanowires is 10-25 nanometers,
The revolving speed of spin coating is 3000-4000 revs/min, and the time of spin coating is 2-4 minutes, and described six, the seven, the eight, the 9th
The temperature of annealing is 110-130 DEG C, and the time of the 6th annealing is 2-4 minutes, the 7th annealing
The time of processing be 3-6 minute, it is described 8th time annealing time be 5-10 minutes, it is described 9th time make annealing treatment when
Between be 10-15 minutes.
7. the preparation method of the solar battery according to claim 1 with multilayer organic film, it is characterised in that:
In the step (12), the material of the positive gate electrode is silver, copper or aluminium, the positive gate electrode with a thickness of 200-
400 nanometers；In the step (13), the layer of lithium fluoride with a thickness of 1-2 nanometers, the aluminium of rear electrode, the back side electricity
Pole with a thickness of 200-400 nanometers.
8. a kind of solar battery with multilayer organic film, which is characterized in that using described in any one of claims 1-6
Prepared by method to form.
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