CN109338308A - High-entropy alloy thin-film material and preparation method thereof - Google Patents
High-entropy alloy thin-film material and preparation method thereof Download PDFInfo
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- CN109338308A CN109338308A CN201811350484.7A CN201811350484A CN109338308A CN 109338308 A CN109338308 A CN 109338308A CN 201811350484 A CN201811350484 A CN 201811350484A CN 109338308 A CN109338308 A CN 109338308A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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Abstract
The invention discloses a kind of CoCrFeNiAl0.3 high-entropy alloy thin-film materials and preparation method thereof, this method comprises: the sample silicon chip that cleaning is to be processed, cleaned sample substrate is placed on the substrate heating device of pulse laser depositing device；High-entropy alloy target is fixed on the target rotating electric machine of pulse laser depositing device；Vacuumize process is carried out to the vacuum chamber of pulse laser depositing device, its vacuum degree is made to reach predetermined vacuum value；The plated film experiment parameter of pulse laser depositing device is set, and the processing of pulse laser pre-sputtering is carried out to sample substrate；And plating high-entropy alloy film processing is carried out to the sample substrate according to the plated film experiment parameter.This process simplify the preparation flow of film, the industrial application cost of high-entropy alloy is reduced, while being convenient for the high-entropy alloy thin-film material uniform in complicated component surface prepared composition, its intensity, abrasion resistance and hardness is improved, increases its service life.
Description
Technical field
The present invention relates to technical field of new material preparation more particularly to a kind of CoCrFeNiAl0.3High-entropy alloy thin-film material
And preparation method thereof.
Background technique
In recent years, high-entropy alloy become Metal Material Science research one of new hot spot, usual high-entropy alloy be by five kinds or
Five kinds or more metallic elements to approach the alloy that equal atomic ratios are formed, with good high temperature resistant, it is corrosion-resistant, high-intensitive and
The excellent properties such as high tenacity.And block structure material is concentrated on for the preparation of high-entropy alloy and research at present, since high entropy closes
The constituent element of golden material is more, industrial application higher cost, on the other hand, due to high entropy alloy material hardness and strength very
Greatly, cause its process and form it is relatively difficult, using being significantly restrained especially on some complicated components.It will be high
On the one hand entropy alloy, which is prepared into film, can save material, reduce preparation cost, on the other hand can apply high-entropy alloy one
A little complicated component surfaces and inner cavity have surface adaptability strong, and keep high entropy alloy material it is original it is high-intensitive,
The special performances such as high rigidity and high-wearing feature.Therefore, it is necessary to a kind of high-entropy alloy thin-film materials and preparation method thereof in solution
State problem.
Summary of the invention
The present invention provides a kind of high-entropy alloy thin-film materials and preparation method thereof, reduce the industry of high entropy alloy material
Application cost, and convenient for preparing high-entropy alloy thin-film material in complicated piece surface.
On the one hand, the present invention provides a kind of preparation methods of high-entropy alloy thin-film material, set using pulse laser deposition
It is standby, which comprises
Sample substrate to be processed is cleaned, cleaned sample substrate is placed on to the base of the pulse laser depositing device
On piece heating device；
High-entropy alloy target is fixed on the target rotating electric machine of the pulse laser depositing device；
Carrying out vacuumize process to the vacuum chamber of the pulse laser depositing device makes its vacuum degree reach predetermined vacuum value；
The plated film experiment parameter of the pulse laser depositing device is set, and to the carry out pre-sputtering of the sample substrate at
Reason；And
Plating high-entropy alloy film processing is carried out to the sample substrate according to the plated film experiment parameter.
In the preparation process in accordance with the present invention, described that cleaned sample substrate is placed on the pulse laser depositing device
Substrate heating device on before, further includes: polyimides high-temp glue is pasted onto the edge of the sample substrate.
In the preparation process in accordance with the present invention, the plated film experiment parameter of the setting pulse laser depositing device, comprising:
Substrate temperature, single pulse energy, target spacing, plated film time, vacuum degree and the frequency of the pulse laser depositing device are set.
In the preparation process in accordance with the present invention, the substrate temperature be 25 DEG C, single pulse energy 300mJ/cm2, target spacing
It is 1 hour for 5cm, plated film time, vacuum degree 10-4Pa and frequency are 10Hz.
In the preparation process in accordance with the present invention, cleaning sample substrate to be processed, comprising:
Using supersonic cleaning instrument, successively sample substrate is preset using ultrapure water, acetone, absolute alcohol and ultrapure water
The cleaning treatment of time；And the sample substrate after cleaning is dried up to complete to the clear of the sample substrate using pure nitrogen
It washes.
In the preparation process in accordance with the present invention, the preset time includes that ultrapure water cleans 10min, acetone cleans 10min, pure
Alcohol and ultrapure water clean 10min.
In the preparation process in accordance with the present invention, the predetermined vacuum value is 10-4Pa；It is described to the pulse laser depositing device
Vacuum chamber carry out vacuumize process so that its vacuum degree is reached predetermined vacuum value, comprising: using mechanical pump will be in the vacuum chamber
Air pressure be evacuated to 101Pa；And the indoor air pressure of the vacuum is evacuated to 10 using molecular pump-4Pa。
In the preparation process in accordance with the present invention, described that the sample substrate is carried out to plate high entropy according to the plated film experiment parameter
After alloy firm processing, further includes: boosted using vacuum chamber of the mechanical pump to the pulse laser depositing device, described in closing
Pulse laser depositing device simultaneously takes out the sample substrate for being coated with high-entropy alloy film.
On the other hand, the present invention also provides a kind of high-entropy alloy thin-film materials, and the high-entropy alloy thin-film material is logical
Cross the thin-film material prepared using any one of the above preparation method.
In high-entropy alloy thin-film material of the invention, the high-entropy alloy thin-film material with a thickness of 234.5nm；It is described
The surface roughness of high-entropy alloy thin-film material is 1 to 2nm.
The embodiment of the invention provides high-entropy alloy thin-film material and preparation method thereof, the pulse laser that this method uses is heavy
Product technology, energy is higher, is conducive to the sputtering of target；The technique has good guarantor's ingredient simultaneously, and parameter regulation facilitates
Advantage can play better superiority in conjunction with high entropy alloy material, the vacuum chamber as where plated film do not need except target and
Other substances other than substrate participate in, therefore finished product is convenient for cleaning treatment, while can simplify the process of preparation, to obtain ingredient
Uniform high-entropy alloy film.
Detailed description of the invention
Technical solution in order to illustrate the embodiments of the present invention more clearly, below will be to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the pulse laser depositing device that one embodiment of the invention provides；
Fig. 2 is a kind of schematic flow diagram of the preparation method for high-entropy alloy thin-film material that one embodiment of the invention provides；
Fig. 3 is the structural schematic diagram for the high-entropy alloy target that one embodiment of the invention provides；
Fig. 4 a is the schematic diagram for the high-entropy alloy film sample that one embodiment of the invention provides；
Fig. 4 b is the effect diagram for the high-entropy alloy film mirror surface that one embodiment of the invention provides；
Fig. 5 a is a kind of low power macroscopic surface shape appearance figure for high-entropy alloy film that one embodiment of the invention provides；
Fig. 5 b is a kind of high power macroscopic surface shape appearance figure for high-entropy alloy film that one embodiment of the invention provides；
Fig. 6 is the section microstructure figure of the high-entropy alloy film deposition of one embodiment of the invention offer on a silicon substrate；
Fig. 7 is the afm scan surface topography of high-entropy alloy film that one embodiment of the invention provides and coarse
Degree figure.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
It should be appreciated that ought use in this specification and in the appended claims, term " includes " and "comprising" instruction
Described feature, entirety, step, operation, the presence of element and/or component, but one or more of the other feature, whole is not precluded
Body, step, operation, the presence or addition of element, component and/or its set.
It is also understood that mesh of the term used in this description of the invention merely for the sake of description specific embodiment
And be not intended to limit the present invention.As description of the invention and it is used in the attached claims, unless on
Other situations are hereafter clearly indicated, otherwise " one " of singular, "one" and "the" are intended to include plural form.
It will be further appreciated that the term "and/or" used in description of the invention and the appended claims is
Refer to any combination and all possible combinations of one or more of associated item listed, and including these combinations.
The embodiment of the invention provides a kind of high-entropy alloy thin-film materials and preparation method thereof, and wherein the preparation method is base
It is realized in pulse laser depositing device, so that high entropy alloy material is deposited on matrix surface using pulsed laser deposition technique, it should
Matrix is silicon substrate, and then is prepared into high-entropy alloy thin-film material.The high-entropy alloy thin-film material is iron-cobalt-nickel chromium aluminium
(CoCrFeNiAl0.3)。
Referring to Fig. 1, the structural schematic diagram for the pulse laser depositing device that one embodiment of the invention provides, as shown in Figure 1,
The pulse laser depositing device includes: that vacuum chamber 110 and the substrate heating device 11 being arranged in vacuum chamber 110, high entropy close
Gold target material 12, target rotating electric machine 13, substrate rotating electric machine 14, observation window 15, plumage brightness 16, vacuum valve 17, laser light incident window
18, argon gas room 21, flowmeter 22, valve 23, laser 31, reflecting mirror 32 and condenser lens 33.
Wherein, substrate heating device 11 is used for fixed placement sample substrate, and passes through axis connection with substrate rotating electric machine 14,
It can be rotated under 14 driving effect of substrate rotating electric machine.High-entropy alloy target 12 can under the driving of target rotating electric machine 13
It is rotated.
Laser 31 is YAG laser, and the laser beam issued passes through the reflection of reflecting mirror 32, and in condenser lens 33
Polymerization is incident on high-entropy alloy target 12 by laser light incident window 18, and generates plumage brightness 16.
Before being prepared, it is also necessary to be taken out by vacuum chamber 110 of the vacuum valve 17 to pulse laser depositing device
It is vacuum-treated；Observation window 15 is used for the convenient observation in real time when preparing material.
Argon gas room 21 stores argon inert gas, in the preparation process of high-entropy alloy thin-film material, opens valve 23
And it adjusts flowmeter 22 and argon gas is filled with to the vacuum chamber 110 of pulse laser depositing device.
Referring to Fig. 2, Fig. 2 is a kind of showing for the preparation method for high-entropy alloy thin-film material that one embodiment of the invention provides
Meaning flow chart.The preparation method is to carry out high-entropy alloy thin-film material system using the pulse laser depositing device in above-described embodiment
It is standby, as shown in Figure 1, the preparation method of the high-entropy alloy thin-film material specifically includes step S101~S105.
Cleaned sample substrate is placed on the pulse laser deposition and set by S101, cleaning sample substrate to be processed
On standby substrate heating device.
Firstly, getting out sample substrate to be processed, which can be complicated part, be also possible to simply flat
Surface parts sample, material can be silicon base.And the sample substrate to be processed is cleaned, by cleaned sample substrate fixed placement
On the substrate heating device 11 of the pulse laser depositing device.
In one embodiment, described to clean wait locate in order to which preferably cleaning sample substrate cleans sample substrate more
The sample substrate of reason, comprising: supersonic cleaning instrument is utilized, successively using ultrapure water, acetone, absolute alcohol and ultrapure water to sample base
The cleaning treatment of piece progress preset time；And the sample substrate after cleaning is dried up to complete to the sample using pure nitrogen
Savor the cleaning of substrate.
Wherein, the preset time includes ultrapure water cleaning 10min, acetone cleaning 10min, absolute alcohol and ultrapure water cleaning
10min, naturally it is also possible to be cleaned with other times.
In one embodiment, in the substrate that cleaned sample substrate is placed on to the pulse laser depositing device
Before on heating device, further includes: polyimides high-temp glue is pasted onto the edge of the sample substrate.So as to subsequent measurement
The thickness of high-entropy alloy thin-film material.
Specifically polyimides high-temp glue is pasted in the edge of sample substrate after cleaning, high temperature will be pasted with
The sample substrate fixed placement of glue is on substrate heating device.
S102, high-entropy alloy target is fixed on the target rotating electric machine of the pulse laser depositing device.
It is prepared to be divided into the high-entropy alloy target of CoCrFeNiAl0.3, which is specially circular configuration, such as
Shown in Fig. 3, diameter D1It is 5 centimetres.Ready high-entropy alloy target is fixedly mounted on the pulse laser depositing device
Target rotating electric machine on.
S103, its vacuum degree is made to reach default true the vacuum chamber progress vacuumize process of the pulse laser depositing device
Null value.
In particular it is required that the vacuum degree for carrying out vacuumize process to the vacuum chamber to vacuum chamber reaches predetermined vacuum value,
The predetermined vacuum value is 10-4Pa, naturally it is also possible to for the other values higher than this vacuum degree.
In one embodiment, the vacuum chamber to the pulse laser depositing device, which carries out vacuumize process, makes its vacuum
Degree reaches predetermined vacuum value, comprising: the indoor air pressure of vacuum is evacuated to 10 using mechanical pump1Pa, and use molecular pump by institute
It states the indoor air pressure of vacuum and is evacuated to 10-4Pa.So that the indoor air pressure of vacuum is rapidly evacuated to preset pressure.
The plated film experiment parameter of S104, the setting pulse laser depositing device, and the sample substrate is splashed in advance
Penetrate processing.
Wherein, the plated film experiment parameter of the setting pulse laser depositing device, comprising: the pulse laser is set
Substrate temperature, single pulse energy, target spacing, plated film time, vacuum degree and the frequency of depositing device.
Specifically, the substrate temperature be 25 DEG C, single pulse energy 300mJ/cm2, target spacing be 5cm, plated film time
For 1 hour, vacuum degree 10-4Pa and frequency are 10Hz.Although these plated film experiment parameter values are optimum value, limit is not constituted
It is fixed.
In other embodiments, the substrate temperature, single pulse energy, target spacing, plated film time, vacuum degree and frequency can
Accordingly to change.
S105, plating high-entropy alloy film processing is carried out to the sample substrate according to the plated film experiment parameter.
After setting up parameter, opens laser and the sample substrate is plated according to the plated film experiment parameter of setting
The processing of high-entropy alloy film.Specifically, as shown in Figure 1, after one section of plated film time, high-entropy alloy is formed in sample substrate 10
Film 100.
In one embodiment, it is also wrapped before step S105 to preferably complete plated film and guarantee plated film purity
It includes: being filled with argon gas to the vacuum chamber of the pulse laser depositing device.
Specifically, argon gas room 21 and valve 23 are opened, and adjusts flowmeter 22 to the vacuum chamber of pulse laser depositing device
110 are filled with argon gas, naturally it is also possible to be filled with other similar gas or inert gas.
In one embodiment, described that plating high-entropy alloy film is carried out to the sample substrate according to the plated film experiment parameter
After processing, further includes: boosted using vacuum chamber of the mechanical pump to the pulse laser depositing device, close the pulse laser
Depositing device simultaneously takes out the sample substrate for being coated with high-entropy alloy film, completes the preparation of high-entropy alloy film.
The pulsed laser deposition technique that above-mentioned preparation method uses, energy is higher, is conducive to the sputtering of target；The work simultaneously
Skill has many advantages, such as good guarantor's ingredient, and parameter regulation is convenient, can play better superiority in conjunction with high entropy alloy material,
Vacuum chamber as where plated film does not need the participation of other substances in addition to target and substrate, and finished product is convenient at cleaning
Reason, while the process of preparation can be simplified, to obtain the high-entropy alloy film of uniform component.
Fig. 4 a and 4b are please referred to, Fig. 4 a is the schematic diagram for the high-entropy alloy film sample that one embodiment of the invention provides, figure
4b is the effect diagram for the high-entropy alloy film mirror surface that one embodiment of the invention provides.The high-entropy alloy thin-film material is to pass through
Use the standby thin-film material of wheat flour on a silicon substrate of any one preparation method in above-described embodiment.
Wherein, which is circular configuration, diameter D2And D3It is to be coated with high-entropy alloy for 7.62cm, Fig. 4 a
(CoCrFeNiAl0.3) film sample, wherein Fig. 4 a is the effect picture under shading treatment；Fig. 4 b is high-entropy alloy
(CoCrFeNiAl0.3) film mirror surface effect picture.
By SEM scanning electron microscope to high-entropy alloy (CoCrFeNiAl0.3) film sample handled to obtain its it is right
The SEM figure answered, specifically as shown in figure 5a and 5b, Fig. 5 a and 5b are that the SEM of different amplification schemes, and Fig. 5 a shows a wide range of interior
It is coated with high-entropy alloy (CoCrFeNiAl0.3) film sample substrate surface with the presence of particle；Fig. 5 b is coated with high entropy in a small range
Alloy (CoCrFeNiAl0.3) film sample substrate surface it is relatively smooth.
Referring to Fig. 6, Fig. 6 is that the section that the high-entropy alloy film that one embodiment of the invention provides deposits on a silicon substrate is aobvious
Micromorphology figure.Fig. 6 show the high-entropy alloy film with a thickness of 234.5nm.
Referring to Fig. 7, Fig. 7 is the afm scan surface for the high-entropy alloy film that one embodiment of the invention provides
Microstructure and roughness figure；It can be seen from figure 7 that the high-entropy alloy film surface prepared using pulsed laser deposition technique
Fluctuating in 1-2nm or so, illustrate that the high-entropy alloy film surface being prepared is smooth.
Table 1 is high-entropy alloy (CoCrFeNiAl0.3) film EDS elemental analysis table
As known from Table 1, in the elemental composition of the high-entropy alloy thin-film material of preparation, Fe, Co, Ni and high-entropy alloy target
The ratio of middle tie element is close, and difference is 1% or so；And the ingredient of Cr in the film is relatively low, Al is then higher, reflects that Al exists
It is easier to be sputtered in pulse laser impact process and deposit, then situation is opposite by Cr.It therefore can by data in the elemental analysis table
To find out, there are micro differences for each element component between target and film, show pulsed laser deposition process to high-entropy alloy
There are different deposition capabilities for various constituent elements in target.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with right
It is required that protection scope subject to.
Claims (10)
1. a kind of preparation method of high-entropy alloy thin-film material, which is characterized in that apply pulse laser depositing device, comprising:
Sample substrate to be processed is cleaned, the substrate that cleaned sample substrate is placed on the pulse laser depositing device is added
In thermal；
High-entropy alloy target is fixed on the target rotating electric machine of the pulse laser depositing device；
Carrying out vacuumize process to the vacuum chamber of the pulse laser depositing device makes its vacuum degree reach predetermined vacuum value；
The plated film experiment parameter of the pulse laser depositing device is set, and pre-sputtering processing is carried out to the sample substrate；With
And
Plating high-entropy alloy film processing is carried out to the sample substrate according to the plated film experiment parameter.
2. preparation method according to claim 1, which is characterized in that it is described cleaned sample substrate is placed on it is described
Before on the substrate heating device of pulse laser depositing device, further includes:
Polyimides high-temp glue is pasted onto the edge of the sample silicon chip.
3. preparation method according to claim 1, which is characterized in that the plating of the setting pulse laser depositing device
Film experiment parameter, comprising:
Substrate temperature, single pulse energy, target spacing, plated film time, vacuum degree and the frequency of the pulse laser depositing device are set
Rate.
4. preparation method according to claim 3, which is characterized in that the substrate temperature is 25 DEG C, single pulse energy is
300mJ/cm2, target spacing be 5cm, plated film time is 1 hour, vacuum degree 10-4Pa and frequency are 10Hz.
5. preparation method according to claim 1, which is characterized in that cleaning sample substrate to be processed, comprising:
Using supersonic cleaning instrument, preset time successively is carried out to sample substrate using ultrapure water, acetone, absolute alcohol and ultrapure water
Cleaning treatment；And
The sample substrate after cleaning is dried up to complete the cleaning to the sample substrate using pure nitrogen.
6. preparation method according to claim 5, which is characterized in that the preset time include ultrapure water cleaning 10min,
Acetone cleans 10min, and absolute alcohol and ultrapure water clean 10min.
7. preparation method according to claim 1, which is characterized in that the predetermined vacuum value is 10-4Pa；It is described to described
The vacuum chamber of pulse laser depositing device, which carries out vacuumize process, makes its vacuum degree reach predetermined vacuum value, comprising:
The indoor air pressure of vacuum is evacuated to 10 using mechanical pump1Pa, and be evacuated to the indoor air pressure of the vacuum using molecular pump
10-4Pa。
8. preparation method according to claim 1, which is characterized in that it is described according to the plated film experiment parameter to the sample
Savor substrate carry out plating high-entropy alloy film processing after, further includes:
It is boosted using vacuum chamber of the mechanical pump to the pulse laser depositing device, closes the pulse laser depositing device and take
It is coated with the sample substrate of high-entropy alloy film out.
9. a kind of high-entropy alloy thin-film material, which is characterized in that the high-entropy alloy thin-film material is by using the right
It is required that any one preparation method and the thin-film material for preparing in 1 to 8.
10. high-entropy alloy thin-film material according to claim 9, which is characterized in that the high-entropy alloy thin-film material
With a thickness of 234.5nm；The surface roughness of the high-entropy alloy thin-film material is 1 to 2nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989001A (en) * | 2019-04-09 | 2019-07-09 | 西安交通大学 | A kind of method of pulsed laser deposition technique preparation high rigidity infusibility high-entropy alloy film |
| CN111218657A (en) * | 2020-01-03 | 2020-06-02 | 北京工业大学 | Amorphous tungsten-based high-entropy alloy thin film material and preparation method thereof |
| CN114457388A (en) * | 2022-01-25 | 2022-05-10 | 南阳师范学院 | Electrolyzed water oxygen evolution anode and preparation method thereof |
| CN115011928A (en) * | 2021-03-05 | 2022-09-06 | 台湾积体电路制造股份有限公司 | Method for regenerating target material and method for forming material film |
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2018
- 2018-11-14 CN CN201811350484.7A patent/CN109338308A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989001A (en) * | 2019-04-09 | 2019-07-09 | 西安交通大学 | A kind of method of pulsed laser deposition technique preparation high rigidity infusibility high-entropy alloy film |
| CN111218657A (en) * | 2020-01-03 | 2020-06-02 | 北京工业大学 | Amorphous tungsten-based high-entropy alloy thin film material and preparation method thereof |
| CN111218657B (en) * | 2020-01-03 | 2021-07-30 | 北京工业大学 | Amorphous tungsten-based high-entropy alloy thin film material and preparation method thereof |
| CN115011928A (en) * | 2021-03-05 | 2022-09-06 | 台湾积体电路制造股份有限公司 | Method for regenerating target material and method for forming material film |
| CN115011928B (en) * | 2021-03-05 | 2024-03-05 | 台湾积体电路制造股份有限公司 | Method for regenerating target material and method for forming material film |
| CN114457388A (en) * | 2022-01-25 | 2022-05-10 | 南阳师范学院 | Electrolyzed water oxygen evolution anode and preparation method thereof |
| CN114457388B (en) * | 2022-01-25 | 2024-02-13 | 南阳师范学院 | Electrolytic water oxygen evolution anode and preparation method thereof |
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