CN109324482A - A kind of extracting method of electron-beam exposure scattering parameter - Google Patents
A kind of extracting method of electron-beam exposure scattering parameter Download PDFInfo
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- CN109324482A CN109324482A CN201710675206.8A CN201710675206A CN109324482A CN 109324482 A CN109324482 A CN 109324482A CN 201710675206 A CN201710675206 A CN 201710675206A CN 109324482 A CN109324482 A CN 109324482A
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- electron
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2061—Electron scattering (proximity) correction or prevention methods
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
Abstract
The present invention relates to a kind of extracting methods of electron-beam exposure scattering parameter.In order to solve the problems, such as cumbersome in existing electron-beam exposure scattering parameter extracting method and be difficult to ensure accuracy, the present invention provides a kind of extracting method of electron-beam exposure scattering parameter, and this method designs the extraction domain of the ratio between suitable preceding scattering parameter α, backscatter parameters β and forward scattering and backscattering sedimentary energy η according to the electron sensitive resist and substrat structure characteristic of the parameter extraction of being carried out；Then the domain designed respectively three kinds on electronic corrosion-resistant to be measured and substrat structure become the e-beam direct-writing exposure of dosage；One group of suitable scattering parameter is finally determined according to the graphic structure feature after the exposure of multiple groups different parameters, development and removing.Without carrying out a large amount of loaded down with trivial details measurements measurement error is not present, and reduce due to Mathematical treatment bring error in the present invention, keeps parameter extraction accurate and simple and easy.
Description
Technical field
The present invention relates to electron beam lithography fields, and in particular to a kind of extraction side of electron-beam exposure scattering parameter
Method.
Background technique
Electron beam lithography (including e-beam direct-writing exposure and projection exposure) is the important hand of modern micro-nano technology
The strong candidate of section and Next Generation Lithography.Due to the wavelength of electron ray it is extremely short (when 15~20kv of acceleration voltage,
Wavelength is about 0.1~0.07 angstrom), so will not be limited as optical lithography by diffraction effect and can achieve higher point
Resolution.But the diffusion of the exposure range as caused by scattering of the incident electron in resist layer and substrate constrains its resolution ratio
Raising and affect image quality.Such as graph outline is caused to extend to adjacent domain, edge blurry, all wedge angles all become
At fillet, hachure figure can not show, and rubber thickness asymmetry, verticality of side wall decline etc., this effect is known as electron beam
Expose kindred effect.
It can effectively improve the resolution ratio and exposal image-forming quality of electron beam exposure by proximity correction technology.Dosage
Bearing calibration is proximity effect correction method most widely used, that effect is best.The basic principle is that by figure difference portion
Position is assigned to different exposure doses and final whole figure is made to obtain uniform sedimentary energy Density Distribution.In neighbouring effect
It answers usually using the method for approximate function in the electron beam exposures analogue technique such as dose modification, i.e., summarizes resist layer with mathematic(al) representation
In sedimentary energy Density Distribution, experiments have shown that double gauss distribution approximate function can preferably approximate sedimentary energy density point
Cloth.Shown in double gauss distribution expression formula such as formula (1).Remove proportionality coefficient in formula, contained two respectively represent before to dissipating
It penetrates and sedimentary energy Density Distribution caused by backscattering.Usually when carrying out dose modification, need accurately to extract relevant
Scattering parameter, scattering parameter α, backscatter parameters β and the ratio between preceding scattering and back scattering sedimentary energy η etc. before including.
F (r)=k (1+ η) π × { 1 α 2exp [- (r α) 2]+η β 2xp [- (r β) 2] } --- (1)]] >
Currently, the extraction of electron-beam exposure scattering parameter is sunk generally by that will measure resulting exposure experiments data
It accumulates the curve matching of energy density and obtains.This method needs to carry out a large amount of wire width measuring and the data of a series of complex are located in advance
Reason, so instrument error, the theoretical error of Mathematical treatment and other human errors are inevitably present, so that parameter mentions
It takes inaccurate and operationally also more difficult.
Summary of the invention
In order to solve cumbersome in existing electron-beam exposure scattering parameter extracting method and be difficult to ensure asking for accuracy
Topic, the present invention provide a kind of extracting method of electron-beam exposure scattering parameter, this method without carry out a large amount of cumbersome measurements and
Data prediction and data fitting, because measurement error may be not present, and reduce due to Mathematical treatment bring error, make parameter
It is accurate and simple and easy to extract.
In order to achieve the above objectives, a kind of the technical solution adopted by the present invention are as follows: extraction side of electron-beam exposure scattering parameter
Method, the extracting method include the following steps:
(1) surface cleaning and heat treatment are carried out to substrate；
(2) electron beam lithography resist is applied on the surface of a substrate, and the pretreatment before being exposed；
(3) the corresponding dose-modulated table being calculated according to multiple groups preset electronic scattering parameter, it is to be measured at this
Electron beam lithography resist and substrat structure on respectively to preceding scattering parameter α, backscatter parameters β and forward scattering and backscattering
The extraction domain of the ratio between sedimentary energy η become the e-beam direct-writing exposure of dosage；
(4) developed to the electron beam lithography resist that finishes of exposure and substrate, be fixed and evaporated metal is removed
Processing；
(5) one group of suitable scattering parameter is determined according to the graphic structure feature that obtains after lift-off processing.
Substrate in above-mentioned steps (1) is the substrate of the structure based on silicon wafer or other semiconductors, conductor.
Coating in above-mentioned steps (2) is carried out using sol evenning machine coating method, and against corrosion to electronics with baking oven or hot plate
Agent and substrate are toasted.
Extraction domain in above-mentioned steps (3) need to be according to the resolution ratio of the electron sensitive resist and to certain energy-incident height
Can the scattering properties of electronics design.
The e-beam direct-writing exposure for becoming dosage described in above-mentioned steps (5) should have biggish variation range, the variation of dosage
Range should be depending on the sensitivity for the resist tested and specific dimension of picture.
It is wide thin different lines that the standard that scattering parameter determines in above-mentioned steps (7), which is respectively as follows: the standard that alpha parameter determines,
Show since same dose；β parameter determine standard be different spacing two squares between hachure since same dose
Show；Hachure between two squares of the standard difference spacing that η parameter determines shows since same dose, while from two squares
Between the long line that extends out also reach same length at this dose.
Compared with prior art, technical solution of the present invention has the advantages that
1, for the more conventional method of the present invention, without carrying out a large amount of loaded down with trivial details measurements, because measurement error may be not present
It influences；Data prediction and data without carrying out loaded down with trivial details are fitted, and further reduce the error as brought by Mathematical treatment,
Keep parameter extraction accurate and simple and easy.
2, electron-beam exposure scattering parameter extracting method provided by the present invention removing biggish for resist layer thickness
Technique is especially useful, and stripping technology success or not is heavily dependent on the shape of resist layer section, and the present invention is actually
Stripping technology is considered in the exposure of electron beam proximity correction.
Detailed description of the invention
Fig. 1 is the implementation flow chart of electron-beam exposure scattering parameter extracting method provided by the invention；
Fig. 2 is to extract in the embodiment of the present invention to electron sensitive resist polymethyl methacrylate (PMMA) scattering parameter
Method flow diagram；
Fig. 3 is the extraction domain of preceding scattering parameter α in the embodiment of the present invention；
Fig. 4 is the extraction domain of backscatter parameters β in the embodiment of the present invention；
The enlarged drawing for extracting the 1st block graphics in domain that Fig. 5 is backscatter parameters β；
The enlarged drawing for extracting the 12nd block graphics in domain that Fig. 6 is backscatter parameters β；
Fig. 7 is the extraction domain of the ratio between forward scattering and backscattering sedimentary energy η in the embodiment of the present invention；
Fig. 8 is the portion the A enlarged drawing of Fig. 7；
Fig. 9 is the portion the B method figure of Fig. 7.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
As shown in FIG. 1, FIG. 1 is the implementation flow charts of electron-beam exposure scattering parameter extracting method provided by the invention, should
Method the following steps are included:
(1) surface cleaning and heat treatment are carried out to the substrate for making micrographics on it in advance；
(2) coating needs to extract the electron beam lithography resist layer of scattering parameter on the surface of a substrate, and before being exposed
Pretreatment；
(3) before being designed suitably according to the electron beam lithography resist for the parameter extraction of being carried out and substrat structure characteristic
The extraction domain of the ratio between scattering parameter α, backscatter parameters β, forward scattering and backscattering sedimentary energy η；
(4) multiple groups electron scattering parameter is preset, and inputs proximity correction software to obtain corresponding dose-modulated table
Lattice；
(5) according to default multiple groups electron scattering parameter and corresponding dose-modulated table in the electric lithography to be measured
The domain designed respectively three kinds on resist and substrat structure become the e-beam direct-writing exposure of dosage；
(6) developed to the electron beam lithography resist that finishes of exposure and substrate, be fixed and evaporated metal is removed
Processing；
(7) one group of suitable scattering parameter is determined according to the graphic structure feature obtained after lift-off processing；
(8) with the scattering parameter determined, it is exposed experiment again to examine extracted parameter；If exposure development
Gained figure and design layout are more coincide afterwards, then illustrate the neighbouring effect under the conditions of extracted parameter can be used for the exposure development
It should correct.
Substrate in the step (1) can be with the substrate for structure based on silicon wafer or other semiconductors, conductor.
Coating in the step (2) is carried out using sol evenning machine coating method, and against corrosion to electronics with baking oven or hot plate
Agent and substrate carry out the baking of certain time and certain temperature.
Extraction domain in the step (3) need to be according to the resolution ratio of the electron sensitive resist and to certain energy-incident height
Can the scattering properties of electronics design.
Electron beam exposure proximity correction software in the step (4) can be CAPROX, LayoutBeamer etc.,
Gained modulates the format of table depending on specific software.
Change dose exposure described in the step (5) should have biggish variation range, and the variation range of dosage should be according to institute
Depending on the sensitivity of the resist of test and specific dimension of picture.
The standard that scattering parameter determines in the step (7) is respectively:
The standard that alpha parameter determines: wide thin different lines show since same dose；
The standard that β parameter determines: the hachure between two squares of different spacing shows since same dose；
The standard that η parameter determines: the hachure between two squares of different spacing shows since same dose, while from two
The long line to extend out between square also reaches same length at this dose.
Embodiment
In the present embodiment, by using for polymetylmethacrylate positive electronic corrosion-resistant, in conjunction with attached drawing into
One step illustrates the method that electron-beam exposure scattering parameter provided by the invention extracts.
Step 201: surface cleaning and heat treatment are carried out to two cun of silicon chip substrates；
First a collection of (20) new silicon wafer deionized water shower is then placed into and fills the dedicated of the concentrated sulfuric acid in this step
It is heated 40 minutes in container at 300 DEG C or so, it is to be cooled by silicon chip extracting, it is clean with deionized water shower, it is placed in baking oven,
It is toasted 2 hours at 180 DEG C, to aqueous vapor evaporating completely.
Step 202: the spin coated PMMA electron beam lithography resist layer on Si substrate surface, it is enterprising in 180 DEG C of hot plates
The processing of 2 minutes front bakings of row, allows organic solvent sufficiently to volatilize, measures resist layer with step instrument with a thickness of 450nm or so.
Step 203: being designed suitably according to the electron sensitive resist for the parameter extraction of being carried out and substrat structure characteristic
The extraction domain of the ratio between preceding scattering parameter α, backscatter parameters β, forward scattering and backscattering sedimentary energy η, see respectively Fig. 3, Fig. 4,
Fig. 7；
Fig. 3 is the extraction domain of preceding scattering parameter α, and totally 13 block graphics, filament width increase to 650nm by 50nm, variation
Step-length is 50nm；
Fig. 4 is the extraction domain of backscatter parameters β, totally 12 block graphics, the intermediate filament of figure and the spacing dimension of two sides
700nm, change step 50nm are increased to by 100nm；Fig. 5 is the 1st block graphics, the intermediate filament of figure and the distance ruler of two sides
Very little is 100nm, and Fig. 6 is the 12nd block graphics, and the intermediate filament of figure and the spacing dimension of two sides are 700nm；
Fig. 7 is the extraction domain of the ratio between forward scattering and backscattering sedimentary energy η, totally 12 block graphics, the intermediate filament of figure
Size increases to 270nm, change step 20nm by 50nm, and it is all from two squares extend out part line length all
It is 10 μm；Fig. 8 is the partial enlarged view of the 1st block graphics, and the filament width dimensions among figure are 50nm, and Fig. 9 is the 12nd group picture
The partial enlarged view of shape, the filament width dimensions among figure are 270nm.
Step 204: default multiple groups electron scattering parameter, and it is corresponding to obtain to input proximity correction software CAPROX
Dose-modulated table；
The proximity correction exposure parameter of the domain of scattering parameter α before testing: β is fixed to be set as 10 μm, and η fixation is set as
0.8, α is changed to 140nm from 20nm, and variation step pitch is 10nm.
Test the proximity correction exposure parameter of the domain of backscatter parameters β: α is fixed to be set as 80nm, and η fixation is set as
0.8, β is changed to 10 μm from 1 μm, and variation step pitch is 1 μm.
The proximity correction exposure parameter of the ratio between the test forward scattering and backscattering sedimentary energy domain of η: α fixation is set as
80nm, β are fixed to be set as 10 μm, and η is changed to 3 from 0.5, and variation step pitch is 0.5.
Step 205: according to preset proximity parameter and corresponding dose-modulated table in the electronic corrosion-resistant to be measured and
The domain designed respectively three kinds on substrat structure become the e-beam direct-writing exposure of dosage；
The proximity correction exposure of the domain of scattering parameter α before testing, exposure dose is from 200 μ C/cm2It is changed to 2000
μC/cm2, variation step pitch is 100 μ C/cm2。
The proximity correction exposure of the domain of backscatter parameters β is tested, exposure dose is from -100 μ C/cm2It is changed to 900
μC/cm2, variation step pitch is 50 μ C/cm2。
Test the proximity correction exposure of the ratio between the forward scattering and backscattering sedimentary energy domain of η, exposure dose is from 100
μC/cm2It is changed to 900 μ C/cm2, variation step pitch is 50 μ C/cm2。
Step 206: being developed to piece that exposure finishes, be fixed and evaporated metal carries out lift-off processing；
Developer solution used is MIBK and IPA with the mixed solution of volume ratio 1: 3, fixing solution IPA, cleaning solution in this step
For deionized water, and with being dried with nitrogen.Deposited by electron beam evaporation method deposits 5nm's in the piece sublist face of existing graphics structure respectively
Then piece is placed in acetone soln and carries out lift-off processing by layers of chrome and 200nm layer gold.
Step 207: one group of suitable scattering parameter is determined according to the graphic structure feature of above-mentioned lift-off processing acquired results；
Step 208: being exposed experiment again to examine extracted parameter.
In the present invention in this embodiment, the electronic corrosion-resistant of progress parameter extraction verifying is that PMMA positive electronic is anti-
Lose agent.In practical applications, present invention may apply to most of electronic corrosion-resistants, such as ZEP520A, SAL601 or HSQ electronics
Resist etc..Proximity correction software used in the present embodiment is CAPROX, and it is neighbouring that the present disclosure applies equally to other
Effect calibration software.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (3)
1. a kind of extracting method of electron-beam exposure scattering parameter, it is characterised in that: the extracting method includes the following steps:
(1) surface cleaning and heat treatment are carried out to substrate；
(2) electron beam lithography resist is applied on the surface of a substrate, and the pretreatment before being exposed；
(3) the corresponding dose-modulated table being calculated according to multiple groups preset electronic scattering parameter, in the electricity to be measured
Preceding scattering parameter α, backscatter parameters β and forward scattering and backscattering are deposited respectively on beamlet photoetching resist and substrat structure
The extraction domain of the ratio between energy η become the e-beam direct-writing exposure of dosage；
(4) developed to the electron beam lithography resist that finishes of exposure and substrate, be fixed and evaporated metal carries out lift-off processing；
(5) one group of scattering parameter, the mark that the scattering parameter determines are determined according to the graphic structure feature that obtains after lift-off processing
It is that wide thin different lines show since same dose that standard, which is respectively as follows: the standard that alpha parameter determines,；β parameter determine standard be
Hachure between two squares of different spacing shows since same dose；The standard that η parameter determines is two sides of different spacing
Hachure between block shows since same dose, while also reaching same at this dose from the long line to extend out between two squares
One length.
2. the extracting method of electron-beam exposure scattering parameter as described in claim 1, it is characterised in that: in the step (1)
Substrate be the structure based on silicon wafer or other semiconductors, conductor substrate.
3. the extracting method of electron-beam exposure scattering parameter as described in claim 1, it is characterised in that: in the step (2)
Coating be to be carried out using sol evenning machine coating method, and electronic corrosion-resistant and substrate are toasted with baking oven or hot plate.
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| CN201710675206.8A CN109324482A (en) | 2017-07-31 | 2017-07-31 | A kind of extracting method of electron-beam exposure scattering parameter |
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| CN201710675206.8A CN109324482A (en) | 2017-07-31 | 2017-07-31 | A kind of extracting method of electron-beam exposure scattering parameter |
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