CN109321971A - A kind of abnormal shape polycrystalline furnace crucible guard boards - Google Patents
A kind of abnormal shape polycrystalline furnace crucible guard boards Download PDFInfo
- Publication number
- CN109321971A CN109321971A CN201811532145.0A CN201811532145A CN109321971A CN 109321971 A CN109321971 A CN 109321971A CN 201811532145 A CN201811532145 A CN 201811532145A CN 109321971 A CN109321971 A CN 109321971A
- Authority
- CN
- China
- Prior art keywords
- side plate
- hole
- polycrystalline furnace
- guard boards
- furnace crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002159 abnormal effect Effects 0.000 title claims description 6
- 230000035939 shock Effects 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000007770 graphite material Substances 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 238000009434 installation Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of special-shaped polycrystalline furnace crucible guard boards in silicon wafer manufacturing field, backplate is sequentially connected by the side plate of four pieces of rectangles and is surrounded, and a side of every block of side plate is equipped with fixation hole, and every two blocks of side plates cooperatively form connection by fixing piece and fixation hole；The plate face of every block of side plate, which is located on the position of fixation hole, offers the shock relieve vent intersected with fixation hole, cover board mounting groove is machined at the top of side plate, cover board mounting groove includes a pair of of processing two sides and L shaped plate shape structure being oppositely arranged at the top of side plate, the present invention is by being arranged cover board mounting groove at the top of side plate, it collides with and the set-up time so that reducing installation when cover board is installed, fixing bolt quantity on side plate periphery is reduced, installation effectiveness is improved, can be used in polycrystalline furnace.
Description
Technical field
The present invention relates to a kind of polycrystalline ingot furnace, in particular to a kind of polycrystalline furnace crucible.
Background technique
Photovoltaic power generation is one of currently the most important clean energy resource, has great development potentiality.Due to casting polysilicon
Preparation process it is relatively easy, cost is far below monocrystalline silicon, and polysilicon gradually replaces pulling of silicon single crystal in solar cell material
The leading position in market becomes most important photovoltaic material in industry.China's solar battery manufacturing industry is now small rule
Mould, the representative enterprise with strength is based on private enterprise.According to relevant industries data statistics, in China's photovoltaic industry chain,
Production of polysilicon quotient a total of 20 to 30, there are more than 60 families in silicon wafer enterprise, and there are more than 60 families in battery enterprise, and component enterprise has 330
More families, industry annual value of production are more than more than 3,000 hundred million yuan, and 22,000,000,000 dollars of import-export volume, 300,000 people of employment volume.
With expiring for 630 photovoltaic subsidy policys, competitive pressure is increasing, as silicon wafer enterprise, promotes silicon wafer photoelectricity
Transfer efficiency is the most important thing.And the impurity being inherently present in silicon material cannot effectively exclude that silicon wafer photoelectric conversion effect will be directly affected
Rate.
As shown in figure 5, silica crucible plays the role of carrying silicon material, but in height during producing the ingot casting of polysilicon
Under temperature, silica crucible, which can cause to collapse due to softening, to cause the accident, and crucible guard boards are then to guarantee that it does not collapse and deposits surrounding
Fixed accessory.Disclose a kind of crucible guard boards in the prior art, Publication No.: 205024354 U of CN, the backplate by
The side plate of four pieces of rectangles, which is sequentially connected, to be surrounded, and a side of every block of side plate is equipped with fixation hole, and every two blocks of side plates are logical
Fixing piece is crossed to connect with cooperatively forming for the fixation hole；The plate face of every block of side plate, which is located on the position of the fixation hole, to be opened
Equipped with the anti-fault trough intersected with the fixation hole；Crucible guard boards are made of isostatic pressing formed graphite, higher cost, due to aging itself and
The problems such as colliding with problem in use process, being easy to produce chipping causes to scrap；And backplate directly affects furnace gas due to it
The type of flow, and gas then directly affects the impurities removal situation of silicon ingot, and therefore, the design for backplate shape is particularly significant.This
Patent is based on both of these problems, has redesigned Novel fender, improves problem above.
A kind of crucible for casting ingots graphite protective plate is also disclosed in the prior art, publication number: 108286070 A of CN,
Venthole is opened up at the top of side plate, but the venthole is that the impurity of precipitation is passed through gas to be passed through argon gas to surface of the silicon liquid
Stream guidance discharge, shortcoming, for this ventilating mode when clearing up the impurity of surface of the silicon liquid, cleaning effect is poor, can not show a candle to
The effect that argon gas is cleared up is passed through from crucible top.
Summary of the invention
The object of the present invention is to provide a kind of special-shaped polycrystalline furnace crucible guard boards, solve above-mentioned technical problem, so that crucible protects
The service life is longer for plate, improves installation effectiveness.
The object of the present invention is achieved like this: a kind of abnormal shape polycrystalline furnace crucible guard boards, and the backplate is by four pieces of rectangles
Side plate, which is sequentially connected, to be surrounded, and a side of every block of side plate is equipped with fixation hole, every two blocks of side plates by fixing piece with
The fixation hole cooperatively forms connection；The plate face of every block of side plate be located on the position of the fixation hole offer with it is described
The shock relieve vent that fixation hole intersects, is machined with cover board mounting groove at the top of the side plate, the upper end of the side plate offer a row with
The deflector hole of mounting groove cooperation.
Compared with prior art, the beneficial effects of the present invention are the present invention is pacified by the way that cover board is arranged at the top of side plate
Tankage collides with and the set-up time so that reducing installation when cover board is installed, reduces fixing bolt quantity on side plate periphery, improves installation effect
Rate opens up row's deflector hole enhancing by the upper end in side plate in order to avoid being vented the unsmooth problem for causing internal pressure excessively high
Internal gas flow.The present invention can be used in polycrystalline furnace.
In order to enable the assembly between side plate is more convenient, the fixation hole is threaded hole, and the fixing piece is bolt.
In order to which bolt fixation is more convenient, every block of side plate also has a location hole, described in the screw bolt passes one
The location hole of side plate, another side plate threaded hole with by two blocks of side plates connection.
In order to avoid the bolt after fixing impacts the installation of the heater of backplate periphery, the positioning hole machined
For counter sink.The design of counter sink simultaneously is conducive to identify the installation both forward and reverse directions of side plate.
It is further limited as of the invention, the shock relieve vent is waist-shaped hole, and complete penetration backplate.
In order to extend the service life of backplate, the shock relieve vent is provided with two column along the vertical direction, and the location hole is along perpendicular
Histogram is to being provided with two column.After shock relieve vent and the location hole damage in outside, chipping part can be directly cut off, then be used in
In lesser crucible.
In order to enable deflector hole exhaust is more smooth, the deflector hole is processed into angling hole, and aperture is lower than on the inside of backplate
Outside aperture.
It is directly contacted to reduce gas with carbon impurity, reduces carbon impurity and Hard Inclusion generates, the backplate is graphite material
Matter, and coating is provided on the inside of backplate.
Detailed description of the invention
Fig. 1 is latus inframedium schematic perspective view of the present invention.
Fig. 2 is latus inframedium positive structure schematic of the present invention.
Fig. 3 is the sectional view along A-A along Fig. 2.
Fig. 4 is schematic structural view of the invention.
Fig. 5 is that crucible guard boards use schematic diagram in the prior art.
Wherein, 1 side plate, 2 mounting grooves, 3 threaded holes, 4 shock relieve vents, 5 deflector holes, 6 location holes, 7 coatings.
Specific embodiment
A kind of special-shaped polycrystalline furnace crucible guard boards as shown in Figs 1-4, are sequentially connected by the side plate 1 of four pieces of rectangles and are surrounded, often
A side of block side plate 1 is equipped with threaded hole 3, and every two blocks of side plates 1 are connect by bolt with cooperatively forming for threaded hole 3, and every piece
Side plate 1 also has a location hole 6, the location hole 6 of screw bolt passes side plate 1, another side plate 1 threaded hole 3 by this two pieces
Side plate 1 connects, and location hole 6 is provided with two column along the vertical direction, and location hole 6 is processed as counter sink；The plate face of every block of side plate 1 is located at
Offer the shock relieve vent 4 intersected with fixation hole on the position of fixation hole, shock relieve vent 4 is waist-shaped hole, and complete penetration backplate, damping
Hole 4 is provided with two column along the vertical direction, and the top of side plate 1 is machined with cover board mounting groove 2, and the upper end of side plate 1 offers a row and leads
Discharge orifice 5, deflector hole 5 are processed into angling hole, and 1 inside aperture of side plate is lower than outside aperture, and side plate 1 is graphite material, and side plate 1
Inside be provided with coating 7.
The present invention is in use, the gas sprayed by crucible top can reflect around when contacting silicon ingot surface, and from leading
Discharge orifice is discharged with impurity from deflector hole.
This patent has done following design with regard to cost efficiency problem:
1. increasing shock relieve vent 4 in two pieces of 1 bearings of side plate, the direct impact of power is reduced, reduces in furnace and shakes to crucible side plate 1
Whole destruction increases by 1 service life of side plate.
2. designing two column location holes 6, shock relieve vent 4 in side, two kinds of crucible sizes are taken into account.It is preferentially used for large scale crucible
Outside is used for smaller size crucible if the problems such as chipping occurs, can remove chipping part.
3. location hole 6 is processed into counter sink, not only it is conducive to the installation of side plate 1, while when shove charge heat-insulation cage merges,
Colliding between fixing bolt and side heat-insulation cage or heater is reduced, and can identify 1 both forward and reverse directions of side plate.
This patent has done following improvement with regard to security risk:
1. designing the cover board mounting groove 2 of the cover board of 1 top of side plate, reduction installation is collided with and the set-up time, improves security performance,
It eliminates safe hidden trouble, cover board and side plate cooperation assembly reduce fixing bolt quantity on 1 periphery of side plate, improve installation effectiveness；When assembly,
As shown in figure 4, mounting groove 2 is arranged in opposite a pair of side plates, another pair side plate is without opening up mounting groove 2.
2. designing several carrier gas deflector holes 5 on 1 top of side plate, internal gas impact is reduced, causes cover board mobile, collides with
Heater generates safety accident.
In terms of this patent just improves Ingot quality, following design has been done:
1. designing several carrier gas deflector holes 5 on 1 top of side plate, which is set as the gas port with certain angle, and
This angle is set as angle diagonally downward, so that the gas with a large amount of impurity of internal aggregation, can timely and effectively arrange
It removes, and external contaminated gas cannot be introduced into inside crucible, play very good effect to the impurities removal of crystal.
2. the position that 1 inside of side plate is directly contacted with gas, increases coating 7, gas working method: blows from top to bottom
Gas；Silicon ingot is in furnace: beneath is graphite bottom plate, surrounding graphite protective plate, top carbon fiber cover board；Since air blowing process can be in inside
Air ring is generated around such graphite carbon dust can follow airflow direction to move, and (former broken silicon material, carries out high-temperature molten in the silicon ingot that can enter
Crystallization becomes solid after changing), can therewith together after in the thawing of broken silicon material, into crystallization process, graphite carbon dust is entered again, such silicon
It just will appear inside ingot and (cause the generation of carbon content and Hard Inclusion, Ingot quality decline), can be solved in this way by the way that coating is arranged
The technical issues of.
The present invention is not limited to the above embodiments, on the basis of technical solution disclosed by the invention, the skill of this field
For art personnel according to disclosed technology contents, one can be made to some of which technical characteristic by not needing creative labor
A little replacements and deformation, these replacements and deformation are within the scope of the invention.
Claims (9)
1. a kind of abnormal shape polycrystalline furnace crucible guard boards, the backplate are sequentially connected by the side plate of four pieces of rectangles and are surrounded, every piece of side
A side of plate is equipped with fixation hole, and every two blocks of side plates are connect by fixing piece with cooperatively forming for the fixation hole；Often
The plate face of side plate described in block, which is located on the position of the fixation hole, offers the shock relieve vent intersected with the fixation hole, and feature exists
In being machined with the mounting groove of cooperation cover board at the top of the side plate, the upper end of the side plate offers a row and mounting groove and cooperates
Deflector hole.
2. a kind of special-shaped polycrystalline furnace crucible guard boards according to claim 1, which is characterized in that the fixation hole is screw thread
Hole, the fixing piece are bolt.
3. a kind of special-shaped polycrystalline furnace crucible guard boards according to claim 2, which is characterized in that every block of side plate also has
Location hole, the location hole of side plate described in the screw bolt passes one, another side plate threaded hole with by two blocks of side plates
Connection.
4. a kind of special-shaped polycrystalline furnace crucible guard boards according to claim 3, which is characterized in that the location hole is processed as sinking
Head bore.
5. a kind of special-shaped polycrystalline furnace crucible guard boards according to claim 3, which is characterized in that the shock relieve vent is waist type
Hole, and complete penetration backplate.
6. a kind of special-shaped polycrystalline furnace crucible guard boards according to claim 3, which is characterized in that the shock relieve vent is along vertical side
To being provided with two column.
7. a kind of special-shaped polycrystalline furnace crucible guard boards according to claim 3, which is characterized in that the location hole is along vertical side
To being provided with two column.
8. a kind of abnormal shape polycrystalline furnace crucible guard boards described in any one of -7 according to claim 1, which is characterized in that the water conservancy diversion
Hole machined is at angling hole, and side plate interior sides aperture is lower than outside aperture.
9. a kind of abnormal shape polycrystalline furnace crucible guard boards described in any one of -7 according to claim 1, which is characterized in that the side plate
For graphite material, and coating is provided on the inside of side plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811532145.0A CN109321971A (en) | 2018-12-14 | 2018-12-14 | A kind of abnormal shape polycrystalline furnace crucible guard boards |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811532145.0A CN109321971A (en) | 2018-12-14 | 2018-12-14 | A kind of abnormal shape polycrystalline furnace crucible guard boards |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109321971A true CN109321971A (en) | 2019-02-12 |
Family
ID=65257388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811532145.0A Pending CN109321971A (en) | 2018-12-14 | 2018-12-14 | A kind of abnormal shape polycrystalline furnace crucible guard boards |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109321971A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990034083U (en) * | 1998-01-14 | 1999-08-16 | 구본준 | Shower Head of Semiconductor Wafer Deposition Equipment |
| CN205024354U (en) * | 2015-09-06 | 2016-02-10 | 扬州荣德新能源科技有限公司 | Crucible backplate and crucible |
| CN205275777U (en) * | 2015-11-06 | 2016-06-01 | 晶科能源有限公司 | Crucible and crucible backplate thereof |
| CN108286070A (en) * | 2017-01-09 | 2018-07-17 | 镇江荣德新能源科技有限公司 | A kind of crucible for casting ingots graphite protective plate |
| CN108531984A (en) * | 2018-06-12 | 2018-09-14 | 江西旭阳雷迪高科技股份有限公司 | A method of reducing ingot casting carbon oxygen content for polycrystalline silicon ingot or purifying furnace |
| CN209276674U (en) * | 2018-12-14 | 2019-08-20 | 扬州荣德新能源科技有限公司 | A kind of abnormal shape polycrystalline furnace crucible guard boards |
-
2018
- 2018-12-14 CN CN201811532145.0A patent/CN109321971A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990034083U (en) * | 1998-01-14 | 1999-08-16 | 구본준 | Shower Head of Semiconductor Wafer Deposition Equipment |
| CN205024354U (en) * | 2015-09-06 | 2016-02-10 | 扬州荣德新能源科技有限公司 | Crucible backplate and crucible |
| CN205275777U (en) * | 2015-11-06 | 2016-06-01 | 晶科能源有限公司 | Crucible and crucible backplate thereof |
| CN108286070A (en) * | 2017-01-09 | 2018-07-17 | 镇江荣德新能源科技有限公司 | A kind of crucible for casting ingots graphite protective plate |
| CN108531984A (en) * | 2018-06-12 | 2018-09-14 | 江西旭阳雷迪高科技股份有限公司 | A method of reducing ingot casting carbon oxygen content for polycrystalline silicon ingot or purifying furnace |
| CN209276674U (en) * | 2018-12-14 | 2019-08-20 | 扬州荣德新能源科技有限公司 | A kind of abnormal shape polycrystalline furnace crucible guard boards |
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