CN109320916A - A kind of silicon substrate graphene resin conductive composite material and preparation method and application - Google Patents
A kind of silicon substrate graphene resin conductive composite material and preparation method and application Download PDFInfo
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- CN109320916A CN109320916A CN201811231674.7A CN201811231674A CN109320916A CN 109320916 A CN109320916 A CN 109320916A CN 201811231674 A CN201811231674 A CN 201811231674A CN 109320916 A CN109320916 A CN 109320916A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
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Abstract
The invention discloses a kind of silicon substrate graphene resin conductive composite material, the raw material including following parts by weight: 30~50 parts of graphene oxide, 20~40 parts of epoxy resin, 15~35 parts of isocyanates, 15~35 parts of butyl acrylate, 15~30 parts of Dimethylhydrazine, 10~25 parts of n-methyl-2-pyrrolidone, 10~25 parts of hexadecyl trimethoxy silane, 10~20 parts of silane coupling agent, 10~20 parts of phenol, 10~20 parts of diphenylamines, 10~20 parts of toluene and 3~5 parts of nano silica fume.The invention also discloses the preparation method and application of above-mentioned silicon substrate graphene resin conductive composite material, the present invention makes thermoplastic resin and graphene interact by addition silicon substrate graphene and high-temperature heat treatment, and make the intermolecular of composite material that there is stronger active force, electric conductivity, heat resistance and the toughness of epoxy resin are improved, and reduces production cost.
Description
Technical field
The present invention relates to conducing composite material technical field, specifically a kind of silicon substrate graphene resin conductive composite material and
Preparation method and application.
Background technique
Epoxy resin is a kind of thermosetting resin with highly cross-linked reticular structure.Its performance most outstanding is excellent
Thermo oxidative stability and excellent electrical insulation capability.In addition, epoxy resin also has the moisture resistance of brilliance, waterproof, resists cold, is resistance to smelly
The weather resistances such as oxygen, but solvent-proof performance is poor.Therefore epoxy resin is mainly for the preparation of insulated paint, hydrophobic coating etc..
It is but also most hard nano material that graphene, which is currently most thin in the world, it is almost fully transparent, only absorption
2.3% light;Thermal coefficient is up to 5300W/mK, is higher than carbon nanotube and diamond, its electron mobility is more than under room temperature
15000cm2/Vs, it is higher than carbon nanotubes or silicon crystal, and resistivity is about
10-6 Ω cm, it is lower than copper or silver, it is the current the smallest material of world resistivity.Just because of its resistivity pole
Low, the speed of electron transfer is exceedingly fast, and graphene is the most conductive material in the world, according to its excellent electric conductivity, makes it
Also there is huge application potential in microelectronic field.Graphene is possible to that the substitute of silicon can be become, and manufactures superminiature crystal
Pipe, for producing following supercomputer, it is higher that the higher electron mobility of carbon can be such that following computer obtains
Speed.
The coating that epoxy resin is applied to electronics industry etc. is haveed the shortcomings that one very big is exactly that electric conductivity is poor, greatly
Ground limits its use scope.Propose the electric conductivity performance of epoxy coating by the way that conductive filler is added, usual additive amount compared with
Greatly.
Summary of the invention
The purpose of the present invention is to overcome the deficiency in the prior art, adapts to realistic development, provides a kind of silicon substrate graphite olefine resin
Conducing composite material.
In order to achieve the above objectives, The technical solution adopted by the invention is as follows:
A kind of silicon substrate graphene resin conductive composite material, the raw material including following parts by weight: graphene oxide 30~50
Part, 20~40 parts of epoxy resin, 15~35 parts of isocyanates, 15~35 parts of butyl acrylate, 15~30 parts of Dimethylhydrazine, N- first
10~25 parts of base -2-Pyrrolidone, 10~25 parts of hexadecyl trimethoxy silane, 10~20 parts of silane coupling agent, phenol 10
~20 parts, 10~20 parts of diphenylamines, 10~20 parts of toluene and 3~5 parts of nano silica fume.
Above-mentioned base case is carried out preferably, the raw material including following parts by weight: 40 parts of graphene oxide, epoxy resin 30
Part, 25 parts of isocyanates, 25 parts of butyl acrylate, 22 parts of Dimethylhydrazine, 20 parts of n-methyl-2-pyrrolidone, cetyl front three
20 parts of oxysilane, 15 parts of silane coupling agent, 15 parts of phenol, 15 parts of diphenylamines, 15 parts of toluene and 4 parts of nano silica fume.
The invention also discloses the preparation methods of above-mentioned silicon substrate graphene resin conductive composite material, including prepare step as follows
It is rapid:
(1) it takes graphene oxide to pour into N-Methyl pyrrolidone, is ultrasonically treated after mixing, stand, take supernatant
Liquid is heat-treated at 70~180 DEG C, obtains solid powder;
(2) solid powder, nano silica fume and hexadecyl trimethoxy silane are added to the water, ultrasonic disperse is uniform, so
Phenol, diphenylamines and silane coupling agent are sequentially added wherein afterwards, and it is uniform to continue ultrasonic disperse, mixed solution is obtained, by institute
It states mixed solution and is placed in 24~120h of reaction at 70~100 DEG C, obtain organogel;
(3) it takes isocyanates, butyl acrylate, toluene and water to be added in reaction kettle, is uniformly mixed, then organogel is fallen
Enter reaction kettle, increases temperature to 50~60 DEG C, 40~50min of insulated and stirred, the sodium hydroxide of 6~10moL/l is added dropwise, adjust pH
It to 11~12, stirs evenly, Dimethylhydrazine is added, under the conditions of 75~80 DEG C, insulated and stirred 16~for 24 hours, silicon substrate graphene is obtained,
Then epoxy resin is added, under inert gas protection, is heated to 200~300 DEG C, 8~12h of insulation reaction, discharging cooling is gone
Ionized water, dehydrated alcohol are dried in vacuo 1~2h under the conditions of successively washing 2~3 times, 80~85 DEG C, obtain silicon substrate graphite olefine resin
Conducing composite material.
Preferably, the graphene oxide is prepared by the Hummers method of optimization, and step is by graphite powder
It is dissolved in ice bath in sodium nitrate and concentrated sulfuric acid mixed liquor, is then slowly added to potassium permanganate, is warming up to 50 DEG C, is added after concentrated nitric acid is added
Water dilution, finally settles in the aqueous solution of hydrogen peroxide, and precipitating centrifugation is taken to obtain.
Above-mentioned silicon substrate graphene resin conductive composite material can be as conductive, Heat Conduction Material application.
Compared with prior art, the advantages and positive effects of the present invention are as follows:
(1) electric conductivity, heat resistance and toughness of epoxy resin are improved by addition silicon substrate graphene and high-temperature heat treatment.
(2) it under the protection of inert gas, avoids silicon substrate graphene from contacting with the oxygen in air, is heated to 200~300
DEG C reaction, silicon substrate graphene surface active site carry out in-situ chemical reaction, make hydroxyl, carboxyl, carbonyl etc. and hydrogen bond phase interaction
With using pi bond electron-transport, the silicon substrate graphene resin conductive composite material made has good electric conductivity and thermally conductive
Performance.
The method of preparation silicon substrate graphene resin conductive composite material provided by the present invention, makes thermoplastic resin and graphite
Alkene interaction makes the intermolecular of composite material have stronger active force, and assigns its preferable conductive and heat-conductive ability, reduces
Production cost.
Silicon substrate graphene resin conductive composite material provided by the invention can be used to as conductive, Heat Conduction Material
As conductive film, corrosion resistant Heat Conduction Material, conductive fiber, corrosion-resistant conductive coating etc. application preparation industry, be made various military projects and
Civilian equal conductive plastics product, meets the needs of client, has good commercial value.
Specific embodiment
It elaborates below to specific embodiments of the present invention.
Embodiment 1
A kind of silicon substrate graphene resin conductive composite material, the raw material including following parts by weight: 30 parts of graphene oxide, ring
20 parts of oxygen resin, 15 parts of isocyanates, 15 parts of butyl acrylate, 15 parts of Dimethylhydrazine, 10 parts of n-methyl-2-pyrrolidone, 16
10 parts of alkyl trimethoxysilane, 10 parts of silane coupling agent, 10 parts of phenol, 10 parts of diphenylamines, 10 parts of toluene and nano silica fume 3
Part.
The preparation method of above-mentioned silicon substrate graphene resin conductive composite material, including following preparation step:
(1) it takes graphene oxide to pour into N-Methyl pyrrolidone, carries out ultrasonic treatment 3h after mixing, stand, take
Clear liquid is heat-treated at 70 DEG C, obtains solid powder;
(2) solid powder, nano silica fume and hexadecyl trimethoxy silane are added to the water, ultrasonic disperse is uniform, so
Phenol, diphenylamines and silane coupling agent are sequentially added wherein afterwards, and it is uniform to continue ultrasonic disperse, mixed solution is obtained, by institute
It states mixed solution and is placed at 70 DEG C and react for 24 hours, obtain organogel;
(3) it takes isocyanates, butyl acrylate, toluene and water to be added in reaction kettle, is uniformly mixed, then organogel is fallen
Enter reaction kettle, increase temperature to 50 DEG C, insulated and stirred 40min, the sodium hydroxide of 6moL/l is added dropwise, adjust pH to 11, stirring is equal
It is even, Dimethylhydrazine is added, under the conditions of 75~80 DEG C, insulated and stirred 16h obtains silicon substrate graphene, epoxy resin is then added,
Under nitrogen protection, it being heated to 200 DEG C, insulation reaction 8h, discharging cooling, deionized water, dehydrated alcohol successively wash 2~3 times, and 80
It is dried in vacuo 1h under the conditions of~85 DEG C, obtains silicon substrate graphene resin conductive composite material.
The graphene oxide is prepared by the Hummers method of optimization, and step is that graphite powder is dissolved in nitre
In sour sodium and concentrated sulfuric acid mixed liquor, ice bath is then slowly added to potassium permanganate, is warming up to 50 DEG C, is added after concentrated nitric acid plus water is dilute
It releases, is finally settled in the aqueous solution of hydrogen peroxide, precipitating centrifugation is taken to obtain.
The conductivity of the silicon substrate graphene resin conductive composite material are as follows: 3.2 × 102S/m。
Embodiment 2
A kind of silicon substrate graphene resin conductive composite material, the raw material including following parts by weight: 40 parts of graphene oxide, ring
30 parts of oxygen resin, 25 parts of isocyanates, 25 parts of butyl acrylate, 22 parts of Dimethylhydrazine, 20 parts of n-methyl-2-pyrrolidone, 16
20 parts of alkyl trimethoxysilane, 15 parts of silane coupling agent, 15 parts of phenol, 15 parts of diphenylamines, 15 parts of toluene and nano silica fume 4
Part.
The preparation method of above-mentioned silicon substrate graphene resin conductive composite material, including following preparation step:
(1) it takes graphene oxide to pour into N-Methyl pyrrolidone, carries out ultrasonic treatment 4h after mixing, stand, take
Clear liquid is heat-treated at 150 DEG C, obtains solid powder;
(2) solid powder, nano silica fume and hexadecyl trimethoxy silane are added to the water, ultrasonic disperse is uniform, so
Phenol, diphenylamines and silane coupling agent are sequentially added wherein afterwards, and it is uniform to continue ultrasonic disperse, mixed solution is obtained, by institute
It states mixed solution and is placed at 85 DEG C and react 80h, obtain organogel;
(3) it takes isocyanates, butyl acrylate, toluene and water to be added in reaction kettle, is uniformly mixed, then organogel is fallen
Enter reaction kettle, increase temperature to 55 DEG C, insulated and stirred 45min, the sodium hydroxide of 8moL/l is added dropwise, adjust pH to 12, stirring is equal
It is even, Dimethylhydrazine is added, under the conditions of 75~80 DEG C, insulated and stirred 20h obtains silicon substrate graphene, epoxy resin is then added,
Under helium protection, 250 DEG C, insulation reaction 10h are heated to, discharging cooling, deionized water, dehydrated alcohol successively wash 2~3 times,
It is dried in vacuo 1.5h under the conditions of 80~85 DEG C, obtains silicon substrate graphene resin conductive composite material.
The graphene oxide is prepared by the Hummers method of optimization, and step is that graphite powder is dissolved in nitre
In sour sodium and concentrated sulfuric acid mixed liquor, ice bath is then slowly added to potassium permanganate, is warming up to 50 DEG C, is added after concentrated nitric acid plus water is dilute
It releases, is finally settled in the aqueous solution of hydrogen peroxide, precipitating centrifugation is taken to obtain.
The conductivity of the silicon substrate graphene resin conductive composite material are as follows: 2.8 × 102S/m。
Embodiment 3
A kind of silicon substrate graphene resin conductive composite material, the raw material including following parts by weight: 50 parts of graphene oxide, ring
40 parts of oxygen resin, 35 parts of isocyanates, 35 parts of butyl acrylate, 30 parts of Dimethylhydrazine, 25 parts of n-methyl-2-pyrrolidone, 16
25 parts of alkyl trimethoxysilane, 20 parts of silane coupling agent, 20 parts of phenol, 20 parts of diphenylamines, 20 parts of toluene and nano silica fume 5
Part.
The preparation method of above-mentioned silicon substrate graphene resin conductive composite material, including following preparation step:
(1) it takes graphene oxide to pour into N-Methyl pyrrolidone, carries out ultrasonic treatment 5h after mixing, stand, take
Clear liquid is heat-treated at 180 DEG C, obtains solid powder;
(2) solid powder, nano silica fume and hexadecyl trimethoxy silane are added to the water, ultrasonic disperse is uniform, so
Phenol, diphenylamines and silane coupling agent are sequentially added wherein afterwards, and it is uniform to continue ultrasonic disperse, mixed solution is obtained, by institute
It states mixed solution and is placed at 100 DEG C and react 120h, obtain organogel;
(3) it takes isocyanates, butyl acrylate, toluene and water to be added in reaction kettle, is uniformly mixed, then organogel is fallen
Enter reaction kettle, increase temperature to 60 DEG C, insulated and stirred 50min, the sodium hydroxide of 10moL/l is added dropwise, adjust pH to 12, stirring is equal
It is even, Dimethylhydrazine is added, under the conditions of 75~80 DEG C, insulated and stirred for 24 hours, obtains silicon substrate graphene, epoxy resin is then added,
Under argon gas protection, 300 DEG C, insulation reaction 12h are heated to, discharging cooling, deionized water, dehydrated alcohol successively wash 2~3 times,
It is dried in vacuo 1~2h under the conditions of 80~85 DEG C, obtains silicon substrate graphene resin conductive composite material.
The graphene oxide is prepared by the Hummers method of optimization, and step is that graphite powder is dissolved in nitre
In sour sodium and concentrated sulfuric acid mixed liquor, ice bath is then slowly added to potassium permanganate, is warming up to 50 DEG C, is added after concentrated nitric acid plus water is dilute
It releases, is finally settled in the aqueous solution of hydrogen peroxide, precipitating centrifugation is taken to obtain.
The conductivity of the silicon substrate graphene resin conductive composite material are as follows: 3.0 × 102S/m。
Above-described embodiment is only more excellent embodiment of the invention, is implemented according to the technical essence of the invention to above
Any simple modification, modification and the alternate variation that example is made, belong in the range of technical solution of the present invention.
Claims (5)
1. a kind of silicon substrate graphene resin conductive composite material, which is characterized in that the raw material including following parts by weight: graphite oxide
30~50 parts of alkene, 20~40 parts of epoxy resin, 15~35 parts of isocyanates, 15~35 parts of butyl acrylate, Dimethylhydrazine 15~30
Part, 10~25 parts of n-methyl-2-pyrrolidone, 10~25 parts of hexadecyl trimethoxy silane, 10~20 parts of silane coupling agent,
10~20 parts of phenol, 10~20 parts of diphenylamines, 10~20 parts of toluene and 3~5 parts of nano silica fume.
2. a kind of silicon substrate graphene resin conductive composite material according to claim 1, which is characterized in that including following heavy
Measure the raw material of part: 40 parts of graphene oxide, 30 parts of epoxy resin, 25 parts of isocyanates, 25 parts of butyl acrylate, Dimethylhydrazine 22
Part, 20 parts of n-methyl-2-pyrrolidone, 20 parts of hexadecyl trimethoxy silane, 15 parts of silane coupling agent, 15 parts of phenol, two
15 parts of aniline, 15 parts of toluene and 4 parts of nano silica fume.
3. a kind of preparation method of silicon substrate graphene resin conductive composite material of any of claims 1 or 2, which is characterized in that
Including following preparation step:
(1) it takes graphene oxide to pour into N-Methyl pyrrolidone, is ultrasonically treated after mixing, stand, take supernatant,
It is heat-treated at 70~180 DEG C, obtains solid powder;
(2) solid powder, nano silica fume and hexadecyl trimethoxy silane are added to the water, ultrasonic disperse is uniform, then will
Phenol, diphenylamines and silane coupling agent are sequentially added wherein, and it is uniform to continue ultrasonic disperse, obtains mixed solution, will be described mixed
It closes solution and is placed in 24~120h of reaction at 70~100 DEG C, obtain organogel;
(3) it takes isocyanates, butyl acrylate, toluene and water to be added in reaction kettle, is uniformly mixed, then organogel is poured into instead
Kettle is answered, temperature is increased to 50~60 DEG C, 40~50min of insulated and stirred, the sodium hydroxide of 6~10moL/l is added dropwise, adjust pH to 11
~12, it stirs evenly, Dimethylhydrazine is added, under the conditions of 75~80 DEG C, insulated and stirred 16~for 24 hours, silicon substrate graphene is obtained, then
Epoxy resin is added, under inert gas protection, is heated to 200~300 DEG C, 8~12h of insulation reaction, discharging cools down, deionization
Water, dehydrated alcohol are dried in vacuo 1~2h under the conditions of successively washing 2~3 times, 80~85 DEG C, obtain silicon substrate graphene resin conductive
Composite material.
4. a kind of preparation method of silicon substrate graphene resin conductive composite material according to claim 3, which is characterized in that
The graphene oxide is prepared by the Hummers method of optimization, and step is that graphite powder is dissolved in sodium nitrate and dense
Ice bath in sulfuric acid mixture liquid, is then slowly added to potassium permanganate, is warming up to 50 DEG C, is diluted with water after concentrated nitric acid is added, finally exists
It is settled in the aqueous solution of hydrogen peroxide, precipitating centrifugation is taken to obtain.
5. silicon substrate graphene resin conductive composite material as described in claim 1 is as conductive, Heat Conduction Material application.
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Cited By (1)
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CN110010867A (en) * | 2019-04-02 | 2019-07-12 | 深圳市八六三新材料技术有限责任公司 | A kind of graphene silicon substrate flexible compound lithium cell cathode material and preparation method thereof |
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Application publication date: 20190212 |