CN109314120A - Photographing module and photographic device - Google Patents
Photographing module and photographic device Download PDFInfo
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- CN109314120A CN109314120A CN201780024403.1A CN201780024403A CN109314120A CN 109314120 A CN109314120 A CN 109314120A CN 201780024403 A CN201780024403 A CN 201780024403A CN 109314120 A CN109314120 A CN 109314120A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 271
- 239000000758 substrate Substances 0.000 claims abstract description 139
- 230000003287 optical effect Effects 0.000 claims abstract description 59
- 238000006243 chemical reaction Methods 0.000 claims description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 31
- 238000002604 ultrasonography Methods 0.000 claims description 23
- 238000009434 installation Methods 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 12
- 210000005075 mammary gland Anatomy 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 230000000007 visual effect Effects 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 230000005622 photoelectricity Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 230000001815 facial effect Effects 0.000 claims description 2
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 16
- 238000002059 diagnostic imaging Methods 0.000 abstract description 4
- 201000010099 disease Diseases 0.000 abstract description 3
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 description 30
- 238000002591 computed tomography Methods 0.000 description 23
- 239000002585 base Substances 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 16
- 239000000523 sample Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 210000001519 tissue Anatomy 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 11
- 238000010183 spectrum analysis Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 201000011510 cancer Diseases 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 206010028980 Neoplasm Diseases 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 239000002872 contrast media Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 229910001385 heavy metal Inorganic materials 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003685 thermal hair damage Effects 0.000 description 5
- 230000002285 radioactive effect Effects 0.000 description 4
- 210000001015 abdomen Anatomy 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 210000004556 brain Anatomy 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000003745 diagnosis Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002189 fluorescence spectrum Methods 0.000 description 3
- 230000003902 lesion Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- INGWEZCOABYORO-UHFFFAOYSA-N 2-(furan-2-yl)-7-methyl-1h-1,8-naphthyridin-4-one Chemical compound N=1C2=NC(C)=CC=C2C(O)=CC=1C1=CC=CO1 INGWEZCOABYORO-UHFFFAOYSA-N 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 210000004204 blood vessel Anatomy 0.000 description 2
- 210000000481 breast Anatomy 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 108010002255 deoxyhemoglobin Proteins 0.000 description 2
- 230000023077 detection of light stimulus Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 206010006187 Breast cancer Diseases 0.000 description 1
- 208000026310 Breast neoplasm Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010054147 Hemoglobins Proteins 0.000 description 1
- 102000001554 Hemoglobins Human genes 0.000 description 1
- 102000010445 Lactoferrin Human genes 0.000 description 1
- 108010063045 Lactoferrin Proteins 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 206010061902 Pancreatic neoplasm Diseases 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 206010060862 Prostate cancer Diseases 0.000 description 1
- 208000000236 Prostatic Neoplasms Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000033115 angiogenesis Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 208000006990 cholangiocarcinoma Diseases 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000013399 early diagnosis Methods 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000799 fluorescence microscopy Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 germanium ion Chemical class 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- CSSYQJWUGATIHM-IKGCZBKSSA-N l-phenylalanyl-l-lysyl-l-cysteinyl-l-arginyl-l-arginyl-l-tryptophyl-l-glutaminyl-l-tryptophyl-l-arginyl-l-methionyl-l-lysyl-l-lysyl-l-leucylglycyl-l-alanyl-l-prolyl-l-seryl-l-isoleucyl-l-threonyl-l-cysteinyl-l-valyl-l-arginyl-l-arginyl-l-alanyl-l-phenylal Chemical compound C([C@H](N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CS)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(C)C)C(=O)NCC(=O)N[C@@H](C)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CS)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(O)=O)C1=CC=CC=C1 CSSYQJWUGATIHM-IKGCZBKSSA-N 0.000 description 1
- 229940078795 lactoferrin Drugs 0.000 description 1
- 235000021242 lactoferrin Nutrition 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 208000015486 malignant pancreatic neoplasm Diseases 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 210000001835 viscera Anatomy 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/044—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances for absorption imaging
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/043—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances for fluorescence imaging
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/046—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances for infrared imaging
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B10/00—Other methods or instruments for diagnosis, e.g. instruments for taking a cell sample, for biopsy, for vaccination diagnosis; Sex determination; Ovulation-period determination; Throat striking implements
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Surgery (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Biomedical Technology (AREA)
- Animal Behavior & Ethology (AREA)
- Veterinary Medicine (AREA)
- Public Health (AREA)
- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Radiology & Medical Imaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Biophysics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Endoscopes (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention is by improving the space in the photographic devices such as optical charting device or light CT device, time, energy resolution, and diagnostic imaging precision is greatly improved by the miniaturization of photographic device, to realize the early detection of disease etc. and the abatement of payment for medical care.The present invention provides a kind of photographic device of photographing module, the photographing module be to using with the side surface part of the semiconductor substrate in the semiconductor-based plate face vertical direction for being formed with integrated circuit as the semiconductor camera element of light-receiving surface, in the semiconductor-based plate face for being formed with integrated circuit, one or more light source portions are configured in such a way that the normal direction of the exit direction of the light from light source portion and substrate-side face is consistent and are formed.
Description
Technical field
The present invention relates to energy, space and time excellent in resolution, and realize high sensitivity, small-size light-weight, low-power consumption
Photographing module, and used the photographic device of the photographing module.
Background technique
Light CT (computed tomography) device (patent document 1) using near infrared light is disclosed at present.But due to
The multiple detectors of radial configuration are needed, or make the rotary motion around subject of light source portion, thus cannot be abundant
Space resolution, it is difficult to the miniaturization of realization device.Similarly, it is also disclosed and is penetrated using the mammary gland X of near infrared light
Line camera (patent document 2), but due to the shape of subject coincide detector and light source configuration exist restrict and
The number of detector is also restricted, and therefore, it is difficult to find the minute lesion position within early stage or several millimeters.In addition, for making
With the optical charting device (patent document 3) of near infrared light, the number of combinations of used detector and light source there is also restriction,
Thus it cannot get sufficient resolution ratio, it is to be further improved to the phases such as subsequent image analysis or diagnosis of progress.In addition, either newborn
Gland X-ray imaging device or optical charting device are difficult to accurately set the relative positional relationship of light source and detector, furthermore
For subject, brought pain and unplessantness displeasure also become when these devices are equipped on body by closely sealed or compressing
Problem.On the other hand, it discloses the image information obtained by visible light and is carried out by the information that supersonic detector obtains
The compound photographic device (patent document 4) of combination, but also need to obtain the intracorporal image letter of biology simultaneously using near infrared light
Breath is to early detection cancer and Other diseases and mitigates burden of patients.
It is disclosed at present by keeping X-ray incident from the side of semiconductor substrate and in X-ray in semiconductor-based intralamellar part
Photoelectric conversion is carried out during advancing to the direction parallel with semiconductor-based plate face, to realize the method (patent of X-ray spectral analysis
Document 5), and there is the photographing element (patent document 6) of sensitivity near infrared light.Compared with visible light, X-ray and close red
Outside line is all to improve sensitivity by increasing the incident light light path inside silicon.It is recorded in patent document 7 and enters above-mentioned side
The principle for penetrating photographing element is applied to the example of X ray CT device.But it is this using substrate side surfaces as the camera shooting of acceptance part member
Part is to be divided (singualtion) as cutting (Dicing) semiconductor crystal wafer for obtained from photographing element one by one.Cause
This, the peripheral portion or sidewall portion on photographing element surface can because of the cutting action mechanically damaged, thermal damage and generate crystal
Defect, and be exposed to from the pollution of external heavy metal or reactive chemical etc..Thus, like this by base
Plate side as acceptance part photographing element there are still not yet solve the technical issues of.
Existing technical literature:
Patent document 1: Japanese Unexamined Patent Publication 4-241850
Patent document 2: Japanese Unexamined Patent Application Publication 2002-502652
Patent document 3: Japanese Unexamined Patent Application 63-275323
Patent document 4: Japanese Unexamined Patent Application 57-145650
Patent document 5: Japanese Unexamined Patent Publication 8-29329
Patent document 6: Japanese Unexamined Patent Publication 2011-205085
Patent document 7: Japanese Unexamined Patent Application Publication 2012-517604
Summary of the invention
Problems to be solved by the invention:
The problem to be solved by the present invention is to provide for the photophysical property to determinand relative near infrared light etc.
The photographing module of spectrum analysis or camera shooting and the photographic device using the photographing module are carried out, realizes space, energy and time point
The raising of resolution, detection sensitivity, resolution, the raising of dynamic range and photographic device miniaturization and low function
Consumptionization.In addition, also residing in the expansion for realizing detectable lambda1-wavelength region；It can be with various tested shapes and size etc. pair
The photographing module answered and using the photographing module photographic device and spectral analysis device etc. application field expansion.In addition,
It also resides in and has used different optical source wavelength or signal source and can by realizing fluorescent analysis apparatus or ultrasonic imaging apparatus etc.
The photographic device for carrying out the mixed type photographing module of camera shooting or spectrum analysis simultaneously can be realized the shadow of high-precision and high reliability
As diagnosis or the early diagnosis and therapy based on specimen analyzing.In addition, also residing in application photographing module and using the camera shooting mould
The human body of mitigation subject and spiritual burden, realize noninvasive or underload inspection when the photographic device of block.Specifically,
Mainly following items are the technical task to be solved.
It is accurate in two dimension or three-dimensional space to configure multiple detectors and light source portion to improve space resolution.Realize detection
The expansion of the high-sensitivity of device, high-resolution and dynamic range.The correct setting detection identical with the shape of subject
The relative positional relationship of the configuration of device and light source, the number of detector and light source and light source and detector, and then optimization and quilt
The light-receiving surface shape of the suitable detector of the shape of a specimen and the exit facet direction of the light from light source.Inhibit between multiple detectors
Characteristic it is uneven, improve based on high speed, the temporal resolution of low-power drive.By using half beyond used die size
Conductor photographing element (also referred to as photo-electric conversion element) can be realized the camera shooting of the large-scale subject such as human body.
Take into account the high-sensitivity and low crosstalk to long wavelength lights such as near infrared lights (NIR).And it improves to incident light
Energy resolution.Photographing module is constituted using following semiconductor camera element, i.e. semiconductor camera shooting member can reduce driving electricity
Pressure and the special material that will increase cost without using SOI (Silicon on Insulator) substrate, high resistance silicon wafer etc..Pass through
It can be avoided used silicon substrate and form partly leading for deeper photoelectric conversion regions and component separation area in a thickness direction
The structure of body photographing element inhibits the load of manufacturing process.In the semiconductor camera element for photographing module, inhibit half
The generation of the crystal defect of conductor substrate-side face prevents the camera shooting characteristic caused by external pollution etc. or reliability
It reduces.
It realizes small-sized, light weight pocket and can reduce the pain of subject and the photographic device of burden or spectrum analysis
Device.
Solution to problem:
To achieve the above object, photographing module according to the present invention is configured that in the semiconductor for having photoelectric conversion part
There is one or more light sources portion, and the light exit portion in light source portion is located at light receiving side on photographing element, wherein above-mentioned photoelectricity turns
The portion of changing be using be formed with integrated circuit semiconductor-based plate face vertical direction on semiconductor substrate side surface part as light
Face.Photographing module of the invention has one or more light sources in the side surface part side for the semiconductor substrate for having light-receiving surface side
Portion.In photographing module according to the present invention, connection be arranged in light-receiving surface pixel array pixel center line with connect light
The line at the light exit portion center in source portion is in the same plane.Photographing module according to the present invention is by being formed with integrated circuit
Semiconductor substrate surface side or semiconductor substrate back side there is the structure in one or more light source portions and constitute.Involved by the present invention
And photographing module in, semiconductor camera element is layered on installation base plate, and with the face that is equipped with semiconductor camera element
There is one or more light sources portion on identical face or on the installation base plate face of opposite side.
Photographing module according to the present invention is the shape of the semiconductor substrate side surface part as light-receiving surface in plane angle
Upper is in curved structure.Photographing module according to the present invention is characterized in that, becomes the semiconductor substrate side surface part of light-receiving surface
Shape be round on plane angle.In photographing module according to the present invention, semiconductor camera element portion is by by two
The knot that above semiconductor camera element is laminated in the side vertical with semiconductor-based plate face upwardly through electrical couplings means
Structure is constituted.
Photographing module according to the present invention is complete for the light-receiving surface of semiconductor camera element and the light exit direction in light source portion
(360 °) of orientation surrounds the structure of subject.Therefore, hollow portion is set in the inside of single semiconductor substrate, or is taken the photograph multiple
As module array is set as on an x-y plane around subject.In addition, the shape of peripheral part is circular ring shape on plane angle.
Semiconductor substrate side surface part as light-receiving surface is covered by insulating films such as silicon oxide layers.In addition, in the insulating film
High concentration impurities layer is arranged in lower layer.Germanic SiGe domain is arranged in photoelectric conversion part on a silicon substrate.It is laminated on light-receiving surface
The optical components such as lenticule.The photoelectric conversion part of semiconductor camera element is formed by CIGS and other photoconductive films.Mould will be imaged
The substrate thickness of semiconductor camera element used in block is thin to 5~20 μm or so.
The light source portion of photographing module according to the present invention is any one of light emitting diode, laser diode or optical fiber
Either their combination, making its emergent light is, for example, near infrared light.
Smooth CT device according to the present invention has more than two photographing modules vertical with semiconductor-based plate face
The three-dimensional structure being composed on direction.
Smooth CT device or optical charting device according to the present invention have by more than two photographing modules with constitute by
The longitudinal direction of the semiconductor substrate side of smooth surface knot made of radial circular mode configures centered on straight line
Structure.
Smooth CT device, mammary gland X-ray shooting device or optical charting device according to the present invention be characterized in that, be by
More than two photographing modules three-dimensional structure being composed on the direction vertical with semiconductor-based plate face, and adjacent camera shooting
The circular diameter Ga of module is gradually expanded or reduces, and in above-mentioned photographing module, becomes the side surface part of the semiconductor substrate of light-receiving surface
Shape is round for concavity on plane angle.
Smooth CT device, mammary gland X-ray shooting device or optical charting device according to the present invention be characterized in that, can
Elongate or shorten the relative position between more than two photographing modules.
Smooth CT device, mammary gland X-ray shooting device or optical charting device according to the present invention are characterized in that, by net
Shape structure is constituted, which is the radial more than two circular shapes of combination in the longitudinal by domed shape
Photographing module, and on the dimension direction of domed shape made of the photographing module of combination annulus shape.
Smooth ultrasonic imaging apparatus according to the present invention has photographing module, and the photographing module is by becoming the half of light-receiving surface
The shape of the side surface part of conductor substrate is semiconductor camera element, light source portion and the ultrasound examination portion of convex on plane angle
Composition.
Smooth ultrasonic endoscope device according to the present invention has photographing module, and the photographing module is by becoming light-receiving surface
The shape of the side surface part of semiconductor substrate is the circular semiconductor camera element of convex, light source portion and ultrasonic wave on plane angle
Test section composition.
Invention effect
It can be realized miniaturization and the low power consumption of the photographic device or spectral device etc. using near infrared light.I.e.
Make that the higher image quality that photographic device miniaturization can also be had to image, high-speed camera, sensitivity variations be small, glitch
Etc. few camera shooting characteristic, the expansion of application range is brought.There is the photographing element being suitble to tested shape due to can be realized
Shape and its photographic device of configuration, so it is excellent to obtain high image quality, high-resolution and energy, time, spatial resolution
Photographic device.It can obtain preventing the image deteriorations such as white mark, crosstalk occur on the image obtained, improve the reliable of photographing element
The effect of property and life of product.Mixed type camera shooting diagnostic device can be obtained, which can be achieved at the same time in single photographing module
The different camera functions for having used supersonic detector etc., other than miniaturization, highly sensitive higher image quality, also
With multiple diagnostic functions.Also, it will realize size, shape or the various quilts that can get with subject (human body or internal organs etc.)
A specimen forms the novel brain image of the corresponding most suitable image information of difference of (bone, muscle, blood vessel etc.) and incident laser energy, cream
The diagnostic imaging devices such as gland X-ray, endoscope apparatus.In such manner, it is possible to obtain accurately setting the opposite of light source and detector
Positional relationship and the photographing module coincideing with tested shape, therefore can realize especially and can reduce subject's mentally meat
Minimally invasive or noninvasive medical photographic device or spectral analysis device of pain and unplessantness displeasure on body etc..
Detailed description of the invention
Fig. 1 (a) is the perspective view and its 3-D walls and floor of an example for indicating photographing module of the invention；
Fig. 1 (b) is the sectional view of the module of position shown in the dotted arrow A-A ' of Fig. 1 (a)；
Fig. 1 (c) is the plan view for illustrating the structure in the semiconductor camera element portion in the module；
Fig. 2 (a) is another perspective view and its 3-D walls and floor for indicating photographing module of the invention；
Fig. 2 (b) is the sectional view of the module of position shown in the dotted arrow B-B ' of Fig. 2 (a)；
Fig. 2 (c) is the plan view for illustrating the structure in the semiconductor camera element portion in the module；
Fig. 3 (a) is another perspective view and its 3-D walls and floor for indicating photographing module of the invention；
Fig. 3 (b) is the sectional view of the module of position shown in the dotted arrow C-C ' of Fig. 3 (a)；
Fig. 3 (c) is the plan view for illustrating the structure in the semiconductor camera element portion in the module；
Fig. 4 (a) is another plan view and its two-dimensional coordinates for indicating photographing module of the invention；
The light-receiving surface and light source of module when Fig. 4 (b) is for from illustrating the direction hollow arrow D shown in Fig. 4 (a)
The plan view of the structure of light exit portion；
Fig. 4 (c) is the plan view of the compound photographing module by the configuration of more than two photographing modules on an x-y plane；
Fig. 5 (a) is another perspective view and its 3-D walls and floor for indicating photographing module of the invention；
Fig. 5 (b) is the plan view of the module；
The light-receiving surface and light source of module when Fig. 5 (c) is for from illustrating the direction hollow arrow E shown in Fig. 5 (b)
The plan view of the structure of light exit portion；
Fig. 6 (a) is another plan view and its two-dimensional coordinates for indicating photographing module of the invention；
Fig. 6 (b) is another plan view and its two-dimensional coordinates for indicating photographing module of the invention；
Fig. 7 (a) is another perspective view and its 3-D walls and floor for indicating photographing module of the invention；
Fig. 7 (b) is the sectional view of the module at the portion dotted arrow F-F ' of Fig. 7 (a)；
Fig. 7 (c) is another perspective view and its 3-D walls and floor for indicating photographing module of the invention.
Fig. 8 (a) is the plan view of the detailed construction of the part 250a for being surrounded in explanatory diagram 5 (b) by dotted line；
Fig. 8 (b) is its variation；
Fig. 8 (c) is the semiconductor camera element on position shown in dotted arrow corresponding with index wire G, G in Fig. 8 (a) '
Sectional structure chart, Fig. 8 (d) are the sectional structure charts of other variations；
Fig. 9 (a) is in the major part sectional structure chart of semiconductor camera element 270 of the invention and the Z-direction of Ge atom
Concentration profile；
Fig. 9 (b) is the major part sectional structure chart of the semiconductor camera element 271 of other embodiments.
The major part cross-section structure in Z-direction when Figure 10 (a) is the slave X-direction observation of laminated type photographing module 620；
The main portion of the light receiving side in Z-direction when Figure 10 (b) is the slave Y direction observation of laminated type photographing module 620
Divide cross-section structure.
Figure 11 (a) is the cross-section structure of the Z-direction of laminated type photographing module 630, and Figure 11 (b) is semiconductor camera element portion
Equivalent circuit diagram；
Figure 12 (a) is the major part cross-section structure in the semiconductor camera element portion in photographing module 640 involved in embodiment
Figure；
Figure 12 (b) is the major part section in the semiconductor camera element portion in other photographing modules 641 involved in embodiment
Structure chart；
Figure 12 (c) is photographing module 640 involved in embodiment or plan view when 641 from Z-direction；
Figure 13 (a) is the major part perspective view and its 3-D walls and floor of smooth CT device according to the present invention；
Figure 13 (b) is the plan view of the major part from U axis direction；
Figure 13 (c) be the major part other embodiments involved in from U axis direction when plan view；
Figure 14 (a) and Figure 14 (b) is the perspective view and its three-dimensional seat of smooth CT device or optical charting device according to the present invention
Parameter；
Figure 15 (a) is the side view and its two-dimensional coordinates of other smooth CT devices or optical charting device according to the present invention；
Plan view when Figure 15 (b) is the device from U axis direction；
Figure 15 (c) is the perspective view and its 3-D walls and floor of other smooth CT devices or optical charting device according to the present invention；
Figure 16 (a) is the structure chart of smooth ultrasonic imaging apparatus according to the present invention；
Figure 16 (b) is the perspective view of the photographing module for the light ultrasonic probe front end that group enters the device；
Figure 16 (c) is the sectional structure chart of the Y-Z plane of the module.
Figure 17 (a) is the perspective view of smooth ultrasonic endoscope device according to the present invention；
Figure 17 (b) is an example for the camera picture for being overlapped the ultrasonography obtained by the device with light signal strength distribution.
Specific embodiment
The photographing module of the first embodiment of the present invention is illustrated.The vertical of photographing module 110 is shown in Fig. 1 (a)
Body figure and 3-D walls and floor.In order to illustrate photographing module 110 and its constituent element, 3-D walls and floor is defined.It will be formed with integrated
The semiconductor-based plate face of circuit is defined as X-Y plane, by the direction vertical with the semiconductor-based plate face, the i.e. thickness of semiconductor substrate
Degree direction is defined as Z axis.Semiconductor substrate is for example configured with multiple light receiving window 2, table at the side surface part of silicon substrate (X-Z plane)
Show the part for receiving incident light.It as described below, with the comparable part of light receiving window 2 is prolonged along the y axis in semiconductor substrate
The photoconduction on each pixel electrode in being constituted made of the end for the photoelectric conversion regions stretched or aftermentioned stacking photoconductive film
Film portion.In addition, light receiving window 2 separated each other by component separation area or on position corresponding with pixel electrodes by every
It opens.Circuit block described below etc. is formed in above-mentioned semiconductor-based plate face.In addition, there are two light for installation on photographing module 110
Source portion 310.As light source portion 310, such as light emitting diode (LED), laser diode (LD), optical fiber etc. can be used, in this reality
Apply the case where being illustrated in example using LED.The number in light source portion 310, can be according to shape physical property of subject etc. or light source portion
Luminous intensity, optical wavelength etc. determine.
The cross-section structure in the face Y-Z of the photographing module 110 on the position of dotted arrow A-A ' shown in Fig. 1 (a) is shown in
Fig. 1 (b).Semiconductor camera element 210 is for example formed in p-type silicon substrate 6, by the photoelectric conversion regions 15 for being imported with p-type impurity
Constitute pn photodiode.If incident light 1 is incident from the side of semiconductor substrate 6, optical signal is in pn photodiode portion quilt
It is converted into electric signal.As shown in the figure, it can be achieved that the p-type impurity region 15 of photoelectric conversion is from edge near semiconductor substrate side surface part
Y-axis (right side) direction and along semiconductor substrate surface extend and formed.According to this structure, circuit design pattern can be passed through
That is the photo-mask process extended distance that easily sets p-type impurity region 15, therefore can be obtained according to such as lambda1-wavelength most suitable
The photoelectric conversion efficiency of conjunction.When visible wavelength is, for example, 380~700 nanometers (nm), the extended distance in p-type impurity region 15 is
5 microns of (μm) left and right are i.e. abundant, and when for example, near infrared light (such as 700~1000nm of wavelength), p-type impurity region 15 is prolonged
It stretches distance and needs to be 10 to 50 μm or so.It should be noted that as described below, when using silicon substrate, entering because of the band gap of silicon
The Long wavelength region medium sensitivity for penetrating a length of 900nm or more of light wave drastically reduces.In this regard, existing visible image capturing element detection with
Silicon substrate plate face almost the near infrared light of vertical incidence when, need the depth by the Z-direction in p-type impurity region be set in 10 μm with
On.But in the manufacturing process, needs to carry out the thermal diffusion process of long-time and high temperature using high resistance substrate or need height
Energy ion implantation apparatus etc..In addition in this deeper p-type impurity structure, the high driving electricity of some tens of volts (V) or more is needed
Pressure.
The semiconductor camera element in semiconductor substrate side surface part with light receiving window is by cutting (dicing) semiconductor
Wafer is divided (singualtion) at obtained from photographing element one by one.Therefore, the peripheral portion on photographing element surface or side
Wall portion can due to the cutting action mechanically damaged, thermal damage and generate crystal defect, and be exposed to from external
In the pollution of heavy metal or reactive chemical etc..In order to solve that there is partly leading for light receiving window in semiconductor substrate side surface part
These technical tasks existing for body photographing element, for example, being covered as shown in Fig. 1 (b) with insulating film (such as silicon oxide layer) 7,9,17
Surface, the back side and the acceptance part side of lid semiconductor substrate.As a result, it is possible to make using semiconductor substrate side surface part as acceptance part
Photographing element and external electrical insulation, while preventing from external pollution (alkali metal, heavy metal, other particles etc.) or crystalline substance
The generation etc. of volume defect etc..In addition, can also become (not shown) such as flowering structure: in the semiconductor-based of the lower part of insulating film 7,9,17
The n-type impurity layer that plate surface has concentration higher than semiconductor substrate 6, the signal charge detected not vulnerable to insulating film with it is semiconductor-based
Interface trap between plate, the influence such as lattice defect.In addition, being formed with photomask on semiconductor camera element 210
13 and as input and output terminal engagement pad 11.Photomask 13 is preferably the metallic films such as aluminium (Al), copper (Cu), tungsten (W).It is logical
In addition to this unnecessary stray light that crossing photomask 13 can cover in addition to the incident light 1 of desired detection also has and inhibits
The temperature in light source portion 310 rises to the increased effect of such as dark current of the influence to semiconductor camera element 210.It should be noted that
By the way that photomask is also laminated on the back side, that is, insulating film 9 of semiconductor camera element 210, unnecessary light can be prevented from the back side
Side intrusion.It is laminated with light source portion 310 on the top of semiconductor camera element 210, light source portion 310 is for example made of LED.In this reality
It applies in example, light source portion 310 is by the component of the encapsulation such as resin, and driving signal passes through the wiring layer on semiconductor camera element 210
Supply.I.e. by the way that dimpling block etc. to be inserted between illumination region and semiconductor camera element 210, semiconductor camera element can be passed through
210 pairs of light source portions 310 carry out drive control.
Another important feature is, when photographing module 110 is equipped on light CT device and other photographic devices, becomes
The semiconductor camera element 210 in optical signal detecting portion and light source portion 310 can simultaneously and relative positional relationship with not generating deviation
Certainly installation is positioned in photographic device.Its result can improve the spatial resolution of camera data.From light source portion 310 for example to
With the emergent light 3 of Y-axis (left side) the direction irradiation near infrared region of figure.A part of emergent light 3 is in quilts such as subjects (not shown)
It absorbs, reflect or diffuses.Therefore, a part of such reflected light or diffused light becomes incident light 1, and can be again by semiconductor
Photographing element 210 detects.The present invention is not limited to the light that this photographing module 110 issues itself to diffuse in subject, propagate
The case where being detected again by same photographing module 110 afterwards.Such as it is also possible to noninvasive near-infrared fluorescence imaging method, this method
Be from the illumination region 310 of photographing module 110 project emergent light 3 (such as exciting light of wavelength X 1) irradiation make to be detected it is intracorporal
Optical contrast agent shines, to detected as incident light 1 (such as fluorescence of wavelength X 2) by semiconductor camera element 210.It answers
Explanation is given, the wavelength of excitation wavelength lambda 1 is generally shorter than wavelength of fluorescence λ 2.In addition, as described below, also can be used as and be based on from camera shooting
Light that second, third and other photographing modules in device project and become the incident light 1 of transmitted light or diffused light and observe.
Fig. 1 (c) is the plan view for illustrating the structure of semiconductor camera element 210.In order to illustrate, show removal hide
Circuit block figure after light film 13.As described above, the surface of light-receiving surface is covered by thin silicon oxidation film 17.This is to reduce with machine
Tool damage, thermal damage crystal defect, and protect photoelectric conversion part 15 not by from external heavy metal or reactive chemicals
The pollution of matter etc..In addition, sensitivity can be improved by the way that antireflection film (not shown) is laminated.As shown, photoelectric conversion part 15 from
The side surface part of semiconductor camera element 210 extends to the region for being formed with integrated circuit block.Multiple photoelectric conversion parts 15 are because of element
Separated region and be separated, as shown in Fig. 1 (a), when from Y direction, light receiving window 2 (also referred to as pixel) is formed as one-dimensional
Array-like.The array pitch of light receiving window 2 can be schemed as described below by manufacturing and designing the stage of semiconductor camera element 210
Case, such as determined with 0.1 μm of precision below.In this Fig. 1 (c), circuit block 19 is for reading from photoelectric conversion part 15
Take the signal-obtaining scanning circuit of signal charge；Circuit block 21 is in the inside of semiconductor camera element 210 or to luminous
The timing pulse generator circuit (TG) of control signal needed for portion 310 provides；Circuit block 23 be for the electric signal read out into
The A/D converter circuit (ADC) of line number word conversion；Circuit block 25 is that the number for being handled digitized picture signal is believed
Number processing circuit (DSP)；Circuit block 27 is interface (I/F) circuit for being communicated with outer member；11 be to be used to form
Engagement pad with the electric contact of external circuit, as input and output terminal.In signal-obtaining scanning circuit 19, institute as follows
It states, the noise canceller circuits such as cd amplifier (SFA), sampling hold circuit are arranged near each photoelectric conversion part 15, because
This is capable of detecting when faint optical charge and can be integrated on single semiconductor substrate, therefore can be by multiple photoelectric conversions
Sensitivity variations in portion 15 inhibit in minimum limit.Similarly, high speed, low noise and low can be obtained by piece ADC and DSP
The digital signal of power consumption exports.In addition, as described below, input/output terminal subnumber is restricted whens for endoscope etc., but at this time
By exporting again after parallel signal is carried out serial conversion in interface (I/F) circuit, reducing input/output terminal subnumber becomes to hold
Easily, multiple picture element signals can be obtained by single photographing module.
As a result, by using semiconductor substrate side surface part as light-receiving surface, even if the penetration distance of incident light is for example tens of μ
M or more can also obtain high-photoelectric transformation efficiency and without high voltage drive.In addition, even if using silicon substrate,
High detection sensitivity can be obtained to 1 μm of near infrared light below of wavelength etc., by carrying out piece to peripheral circuits such as TG, ADC or DSP
Upperization can be reduced, it can be achieved that parallel AD conversion as unit of photographing element or pixel group by signal processing high speed and drive
Dynamic frequency reduces the power consumption or calorific value generated.In addition, adjacent pixel is formed in the side of same semiconductor substrate, therefore energy
Enough make the sensitivity variations minimum limit between pixel.The previous high temperature for needing impurity and prolonged thermal diffusion process or use
Energetic ion injection device forms deeper photoelectric conversion regions 15 in the Z-axis direction.But in the present embodiment, pass through light
It carves (mask design), can easily set extended distance of the photoelectric conversion regions 15 on the direction parallel with X-Y plane.Separately
Outside, as shown, foregoing circuit block (19 etc.) is formed in the region with light receiving side opposite side across photoelectric conversion regions 15, because
This is different in the structure of light of direction incidence vertical with semiconductor-based plate face from existing detection, can prevent incident light and its
Its stray light causes malfunction or the noise of circuit block.
The photographing module of the second embodiment of the present invention is illustrated.In Fig. 2 (a), photographing module 120 is shown
Perspective view and 3-D walls and floor.The part for being different from first embodiment is illustrated.Constituting semiconductor camera element 220
The side surface part of semiconductor substrate, such as silicon substrate is configured with multiple light receiving window 2, but the semiconductor substrate side facing side is as schemed
Show and non-rectilinear, but the convex bending on X-Y plane visual angle.Also, multiple illumination regions 320 are pacified along above-mentioned bending section
Dress.Light source portion 320 is shown in the present embodiment to the case where using optical fiber such as usable LED, LD, optical fiber.Light source
The number in portion 320 can be according to shape physical characteristic of subject etc. or the luminous intensity required light source portion 320, luminous wave
Long and other conditions determine, can be inconsistent with the number of above-mentioned light receiving window.The optical fiber in light source portion 320 is from optical fiber mounting portion
321 are fixed on semiconductor camera element 220 towards light receiving window 2.The effect of optical fiber mounting portion 321 is not only that will connect from outside
The optical fiber connect is bundled, additionally it is possible to be carried out transmission light by optical fiber of the optics connection means to light source portion 320 and be reallocated.Or
It can be in the light-emitting components such as LED or LD built in 321 inside of optical fiber mounting portion, to the structure of the optical fiber supply light in light source portion.
Cross-section structure by the photographing module 120 of the position of dotted arrow B-B ' shown in Fig. 2 (a) in the face Y-Z is shown in Fig. 2 (b).
To 220 structure of semiconductor camera element, only illustrate the part being different from the first embodiment below.Circuit block and insulating film 7 and reality
It is different to apply example 1, positioned at the face opposite with the face for being fixed with light source portion 320 and optical fiber mounting portion 321.Therefore, the also position of engagement pad 11
In the semiconductor camera element face with 320 opposite side of light source portion.Therefore, photomask 13 is formed in the top of insulating film 9.By this
Structure, the configuration that can be avoided input and output terminal are restricted by optical fiber etc..
Fig. 2 (c) is the plan view for illustrating the structure of semiconductor camera element 220.As described above, the surface of light-receiving surface
Convex bending, and covered by thin dielectric membrane (silicon oxide layer etc.) 17.In addition, can be improved by the way that antireflection film (not shown) is laminated
Sensitivity.Photoelectric conversion part 15 extends shape to the region for being formed with integrated circuit block from the side surface part of semiconductor camera element 220
At.Similarly to the first embodiment, multiple photoelectric conversion parts 15 are isolated from each other by component separation area, as shown in Fig. 2 (a), from Y
When axis direction is observed, light receiving window 2 is formed as one-dimensional array shape.Furthermore it is preferred that the direction of the emergent ray from light source portion 320 with
The normal direction of above-mentioned bending curve is consistent.As a result, by making light-receiving surface surface become the structure of convex curvature, so as to picture
It detects the incident light 1 from extensive angle like that equipped with wide-angle lens, therefore for example as described below, is formed and as ultrasonic probe
The shape that the near infrared detector of this shape in front end matches.It should be noted that the composition of the circuit block of this Fig. 2 (c) and the
The case where one embodiment, (Fig. 1 (c)) was identical.
Photographing module 130 involved in the third embodiment of the present invention is illustrated.Camera shooting mould is shown in Fig. 3 (a)
The perspective view and 3-D walls and floor of block 130.The part different from the first, second embodiment is illustrated.Constituting semiconductor
The side surface part of the semiconductor substrate of photographing element 230 is configured with multiple light receiving window 2, but the semiconductor substrate side facing side is as schemed
Show simultaneously non-rectilinear, but it is concavely curved on X-Y plane visual angle.In the present embodiment, installation base plate 430 is layered in semiconductor
On photographing element 230, the end sides of installation base plate 430 are concavely curved in the same manner as semiconductor camera element 230.In addition,
It is installed along above-mentioned bending section in multiple light sources portion 330.Scheme in the present embodiment such as usable LED, LD, optical fiber in light source portion 330
The case where having shown using LD.The number in light source portion 330 can be according to shape physical property of subject etc. or to the requirement of illumination region 330
Luminous intensity, emission wavelength and his other conditions determine, can be inconsistent with the number of above-mentioned light receiving window.
The cross-section structure of the photographing module 130 of the position of dotted arrow C-C' shown in Fig. 3 (a) is shown in Fig. 3 (b).Half-and-half lead
The structure of body photographing element 230 only illustrates the part being different from the first embodiment below.In semiconductor camera element 230 and light
Installation base plate 430 is equipped between source portion 330, it can be by the input of dimpling block 10 and semiconductor camera element 230 and light source portion 330
Output terminal electrical connection (not shown).In addition, installation base plate 430 carries out the transmission of signal between peripheral circuit (not shown)
And reception, in addition it is subjected to power supply.Installation base plate 430 is preferably silicon intermediary layer.This is because easy to form complicated and small
Multilayer wiring pattern, in addition, being easy to be supplied respectively to different supply voltages to semiconductor camera element 230 and light source portion 330.It hides
Light film 13 is formed on insulating film 9, and when the shaded effect of installation base plate 430 is insufficient, screening can also be laminated on insulating film 7
Light film.
Fig. 3 (c) is the plan view for illustrating the structure of semiconductor camera element 230.As described above, the surface of light-receiving surface
It is concavely curved and by thin dielectric membrane (silicon oxide layer etc.) 17 cover.In the same manner as second embodiment, photoelectric conversion part 15 is along curved
Bent normal to a surface direction and from the side surface part of semiconductor camera element 230 to be formed with integrated circuit block region extend.This
Outside, the direction for being preferred from the emergent ray in light source portion 330 is consistent with the normal direction of above-mentioned bending curve.As a result, by making
Light-receiving surface surface becomes the structure of convex curve, can expeditiously examine like that the light CT device etc. being configured to around subject
Survey the incident light 1 of radial diffusion.Circuit in this Fig. 3 (c) constitutes identical as (Fig. 2 (c)) the case where second embodiment.
Photographing module 140 involved in the fourth embodiment of the present invention is illustrated.Camera shooting mould is shown in Fig. 4 (a)
The X-Y plane figure and two-dimensional coordinates of block 140.In the side surface part and for constituting the semiconductor substrate of semiconductor camera element 240
One~3rd embodiment is similarly configured with multiple light receiving window 2 (not shown).In the present embodiment, in the same manner as 3rd embodiment,
The substrate-side face of the semiconductor camera element is concavely curved.In addition, in the present embodiment, in semiconductor in convex curve portion
A part of the substrate of photographing element is equipped with grooving (having at three in this), in addition, in the grooving portion inserted with light source portion 340.Light
Source portion 340 is such as usable LED, LD.It is preferred from the direction of the emergent light 3 in light source portion 340 and the length of photoelectric conversion part 15
Edge direction is consistent with the center position of circular arc.
The side surface part knot of photographing module 140 when Fig. 4 (b) is in explanatory diagram 4 (a) from the direction hollow arrow D
The plan view of structure.Actually the side surface part as shown in Fig. 4 (a) is concavely curved, but is reduced to plan view here for convenience of explanation.
As described above, being formed with multiple light receiving window 2 in semiconductor substrate side surface part.It is also deposited in the side surface part of semiconductor camera element 240
Light source portion 340 is embedded in slot portion, the part.It is preferred that the illumination region exit facet central part 341 in light source portion 340 is configured
To be located along the same line with the central part of light receiving window 2.The pixel center connection of the pixel array of light-receiving surface will be arranged in
The line that line is connect with by the center of light source portion light exit portion is in the same plane, thus, for example from opposed locations are located at
When the emergent light 3 of other photographing modules 140 becomes incident light 1 and is detected, incident light 1 will be incident on semiconductor camera element
On the center line of 240 light receiving window, therefore it can be improved the precision for reconstructing the spatial positional information of image or detection signal.
The X-Y plane figure using the variation of fourth embodiment is shown in Fig. 4 (c).Photographing module 141 is by will be with figure
Photographing module 140 identical photographing module 140-1,140-2,140-3,140-4 are in a manner of being surrounded by circumference shown in 4 (a)
Structure made of on installation base plate 440 is configured to constitute.The maximum shape of each photographing module 140-1~140-4 depends on being made
The full-size of semiconductor crystal wafer, but by this structure, the maximum for the subject that photographing module 141 can image can be expanded
Size.In addition, as shown in the figure subject can be surrounded with 360 ° to circle center direction, therefore as described below, it is applicable to
Mammary gland X-ray shooting device, brain optical charting device etc..
The perspective view of photographing module 150 and its 3-D walls and floor involved in the fifth embodiment of the present invention are shown in Fig. 5
(a).In the present embodiment, semiconductor camera element 250 has circular hollow area in the central portion of single semiconductor substrate
Domain, the inner wall of the hollow region are equipped with light source portion 350.I.e. multiple light receiving window are also disposed in the side wall of the hollow portion.Formed by
The diameter of a circle of the hollow portion of smooth surface depends on the size of used semiconductor substrate such as silicon wafer.Die size is 12 inches
It is especially effective when being applied to the diagnosis of the optical image such as head and other human bodies or toy when left and right.
Fig. 5 (b) is the X-Y plane figure of photographing module 150.Photographing module 150 is by semiconductor camera element 250 and illumination region
350 are constituted, and are fixed with light source portion 350 the inner wall of hollow portion is closely sealed.Multiple smooth exit portion 351 in light source portion 350 are towards in circle
Heart direction arranged at equal intervals, therefore the optical axis of emergent light 3 is also towards the center of the circle.Similarly, photoelectric conversion part 15 is from hollow
The circle center direction in portion is radial to be configured towards semiconductor substrate internal stretch, becomes the semiconductor substrate side surface part of light-receiving surface
By the covering (not shown) of insulating film 17 in the same manner as other embodiments.It should be noted that circuit block 19,21,23,25,27 is above
In have been carried out explanation, circuit block 29 is buffer storage block.Purpose is to cope with the data with photographing module enlargement
The increase of amount and temporarily save data.As a result, using the photographing module 150 of single semiconductor substrate can 360 ° be enclosed in it is tested
Around body, therefore when being imaged to subject, without rotating photographing element, light source portion around subject or half-and-half leading
Body photographing element and the relative positional relationship in light source portion are finely adjusted, and can get high space point in shooting image to play
The excellent effect of resolution.In addition, can be carried out at photoelectric conversion and signal by the integrated circuit formed on single semiconductor substrate
Reason, therefore it can be expected that between pixel the characteristics such as sensitivity unevenness minimum, and by signal processing high speed and driving frequency drop
The reduction etc. of reduction and the calorific value of the raw power consumption of low yield.Further, since can be by the circuit on semiconductor camera element for example
TG carries out light emitting control to the driving in light source portion, therefore can play the high-speed driving that can be realized photographing module 150 or substantially mention
The special-effect of high time resolution.Further, since the shape small-sized light of the photographic device of this photographing module can will be used
Quantization, thus can also obtain can be easily implemented can it is portable or can be vehicle-mounted etc. pocket (mobile) light CT device etc.
Effect.It should be noted that the detailed content of part 250a shown in dotted line in the figure be explained below.
Fig. 5 (c) be in Fig. 5 (b) from the direction hollow arrow E when light source portion 350 plan view.Actually light source portion
It is equally curved along the side wall for the circular hollow for being formed in semiconductor camera element 250 known to 350 surface element from Fig. 5 (b)
It is bent.As described above, being also laminated with light source portion 350 on the semiconductor substrate surface side for becoming light-receiving surface is facial.Light source portion 350 is for example excellent
It is selected as organic LED.The light exit portion 351 and its substrate parts is kept to constitute that light source portion 350 is made of organic LED film.
Substrate parts are preferably such as transparent and plastic foil with flexibility.As shown in Fig. 5 (c), through substrate parts it can be seen that
The light receiving window 2 of semiconductor camera element 250.Light exit portion 351 is formed between light receiving window 2 arranged at equal interval, preferably light
The arrangement of the center of window 2 and light exit portion 351 is point-blank.In the present embodiment, the substrate parts in light receiving window 2 are also
It is formed with optical filter 352.This makes it possible to obtain following effects: applying flexibly the feature with multiple acceptance parts, images semiconductor
Element 250 has multiple spectrum characteristic, or makes the incident optical attenuation etc. in addition to the wavelength of test object light.Thereby, it is possible to
The a variety of photophysical property information obtained from subject compare additionally by S (the signal)/N (noise) for improving optical signal detected
High-sensitivity can be further realized.
Fig. 6 (a) and (b) are 160 plan views of photographing module involved in sixth embodiment.In any of Fig. 6 (a) and (b)
In embodiment, the outer shape of photographing module 160 and 161 is circle on plane angle.As shown in Fig. 6 (a), mould is imaged
Block 160 has hollow portion, therefore the outer shape with circular ring shape.The center position of photoelectric conversion part 15 towards annulus shape is in
Radial formation.Light source portion 360 is, for example, LD, is configured at certain intervals between photoelectric conversion part 15.In addition to becoming light-receiving surface
Except the insulating film 17 of semiconductor substrate surface side face, semiconductor substrate peripheral part is also covered by thin silicon oxidation film 22.In figure
11m is miniature weld pad, when being formed with through electrode 30 (not shown) thereunder, or is formed with the progress of dimpling block and its thereon
It is used when the electrical connection of its semiconductor substrate or installation base plate.Circuit block 19,21,23,25,27,29 is said above
It is bright.There are following situations for the emergent light 3 issued from LD: the photoelectric conversion part 15 that linear rows are in opposed locations in turn is used as
Penetrate the detection of light 1；And it scatters, reflect repeatedly etc. in the subject for being located at hollow portion and by any photoelectric conversion part 15 as entering
Penetrate the detection of light 1.Semiconductor substrate peripheral part and semiconductor substrate peripheral part close on configured with circuit block 19,21,23,25,
27,29.Insulating film 22 can reduce with mechanical damage, thermal damage crystal defect, and can protect integrated circuit not by
Influence from pollutions such as external heavy metal, reactive chemicals.Cut silicon substrate side surface part by cutting
It is disconnected to expose, such as after thinning silicon substrate, expose silicon substrate side surface part using dry etching or reactive ion etching etc.,
It is covered again with silicon oxide layer etc..As a result, it is possible to be formed integrated circuit to silicon substrate side surface part, semiconductor can be made to take the photograph
260 enlargement of element.Such as when using 12 inches of silicon wafer, although the shape of above-mentioned annulus shape, that is, maximum gauge is insufficient
12 inches, but still ensure that its internal diameter is 10 inches or 11 inches or more.It is imaged by using the semiconductor of this wafer size
Element 260 can be realized small-sized, portable light CT device.It especially may be implemented with gear division, head, breast and other body
Light CT device for the purpose of the diagnostic imaging of the toys such as position or pet etc..In addition, as described below, for circle will to be changed
Knot is particularly advantageous when the compound photographing module for the three-dimensional shape that multiple photographing modules 160 of ring-shaped diameter are composed
Structure.
In this regard, the configuration (not shown) of light receiving window 2 is in the semiconductor for constituting photographing module 161 in the embodiment of Fig. 6 (b)
The periphery of photographing element 261.Photoelectric conversion regions 15, and light source portion are formed in the convex peripheral side face of semiconductor substrate
361 are alternately arranged with photoelectric conversion regions 15.The number in light source portion 361 can be fewer than the number of photoelectric conversion part 15.With Fig. 7
(a) on the contrary, insulating film 17 covers the periphery of semiconductor camera element 261, circuit block group (19,21,23,25,27) and miniature weldering
11m configuration is padded in semiconductor-based intralamellar part.Thereby, it is possible to will turn from the incident light 1 of comprehensive (360 ° of directions) incidence in photoelectricity
It changes region 15 and is converted into electric signal.The extended distance of photoelectric conversion regions 15 is being explained above, can be set as 10
Micron is not limited to infrared light to several millimeters or so, also effective for the detection of radioactive ray.The case where with Fig. 7 (a), is same
Sample, expose by cutting the cutting of silicon substrate side surface part, and insulating film 17 can be reduced with mechanical damage, thermal damage
Crystal defect, and integrated circuit can be protected not influenced by from pollutions such as external heavy metal, reactive chemicals,
Therefore it does not need needing to obtain taking the photograph for compact in reserved cutting surplus in the peripheral region of semiconductor camera element 261 etc.
As special effect can be obtained when module, for narrow viewing area using the case where be also advantageous structure.
The perspective view of laminated type photographing module 610 and its 3-D walls and floor involved in the seventh embodiment of the present invention are shown
In Fig. 7 (a).Laminated type photographing module 610 be by electrical connection means will with Fig. 5 (a), (b) and (c) shown in photographing module
What 150 identical photographing module 150-1,150-2,150-3 were laminated.As shown in Fig. 7 (b), photographing module 150-1 with
It is formed with dimpling block 10 between 150-2 and between 150-2 and 150-3 and miniature weld pad (not shown) is used as and is electrically connected means,
Thus, it is possible to realize the electrical connection between photographing module.It should be noted that being formed with so-called silicon in photographing module 150-1 and 150-2
Through electrode (TSV) 30, so that the surface of photographing module 150-1 and 150-2 become easy with being electrically connected for the back side.In camera shooting mould
Insulating properties adhesive layer 32 is accompanied between block 150-1 and 150-2 and between 150-2 and 150-3 and integrally formed stacking camera shooting mould
Block 610.Side wall in hollow portion is covered by insulating film 17, further in photographing module 150-1,150-2 stacked together,
150-3 is fitted with integrally formed light source portion 350.Stacking 610 bottom of photographing module, which is formed with, can be achieved to be electrically connected with external
Input and output engagement pad 11.Thus the photophysical property information from subject, therefore example can also be obtained in the Z-axis direction
Such as have the following advantages: by increasing the stacking number in Z-direction, even if subject, activity can also obtain letter simultaneously in hollow portion
Breath.
On the other hand, the photographing module of Fig. 5 (a), Fig. 6 (a) and Fig. 7 (a) have to be formed by a piece of semiconductor crystal wafer and take the photograph
Element portion is a little, difficult if used semiconductor die size is, for example, 12 inches or 14 inches but for its size
To form the large-scale photographing module for being greater than the size.Therefore by as shown in Fig. 4 (c) by multiple photographing elements in one plane
Permutation and combination can further realize large-scale photographing module.But be only bent on one side as shown in Fig. 4 (a) and its excess-three side be square
When a part of shape (140 etc.), original part area cannot be efficiently used, in addition the maximum shape of the photographing module 141 of Fig. 4 (c)
Size is also required to further enlargement.
It can be achieved to the 8th of further heavy caliber to implement to be illustrated in Fig. 7 (c).Photographing module 162 and Fig. 6's (a) takes the photograph
As module 160 similarly on X-Y plane visual angle be circular ring shape, be multiple photographing module 162-1~162-8 are closely combined and
At.Each photographing module 162-1~162-8 is in arcuate bending as shown in the figure, and its width r2 is, for example, number mm~at most 3cm left
It is right.Therefore, the photographing element of the multi-disc arcuate and strip can be easily formed by a piece of semiconductor crystal wafer.As a result, camera shooting
The hollow portion diameter r1 of module 162 can for example be extended to 70~100cm or so.Combined arcuate photographing module number be not limited to as
8 of the present embodiment, can increase or decrease.Alternatively, it is also possible to the photographing module 610 as Fig. 7 (a) in the Z-axis direction
Multiple photographing modules 162 are laminated.
Fig. 8 (a) is the plan view for the structure of region 250a as shown in dotted line in explanatory diagram 5 (b).Region 250a with
The structure of one pixel of so-called MOS type photoelectric conversion (camera shooting) element is suitable.Photoelectric conversion regions 15 can be along light (1)
Incident direction extends to form in semiconductor substrate, therefore becomes and be not limited to visible light, such as the photoelectricity of near infrared light (NIR)
Convert also structure easy to perform.The charge generated in photoelectric conversion regions 15 is sent to signal-obtaining scanning circuit 19.
The top of signal-obtaining scanning circuit 19 is formed with line-group 20.Furthermore it is preferred that the semiconductor substrate side between adjacent pixels
Photomask 14 is laminated in portion to mitigate the crosstalk between adjacent pixels.Fig. 8 (b) is the mos semiconductor photographing element knot of Fig. 8 (a)
The variation of structure.I.e. as shown, photoelectric conversion regions are divided on incident light direction is formed as 15-1,15-2 and 15-3.It is logical
This structure is crossed, such as mainly can detect that green (G) light in photoelectric conversion regions 15-1, mainly may be used in photoelectric conversion regions 15-2
Detect red (R) light, mainly can detect that near infrared light (NIR) in photoelectric conversion regions 15-3, thus can also be used for into
Penetrate the energy resolved of light.
Use the photoelectric conversion regions 15 and signal-obtaining scanning circuit in Fig. 8 (c) explanatory diagram in the portion dotted arrow G-G '
19 element section structure.Surface, the back side and the side surface part equipped with light receiving window of semiconductor substrate are respectively by insulating film 7,9 and 17
Covering, is also formed with high concentration of p-type impurity layer 8,18 and 12 in the lower part of these insulating films.In addition, the bottom surface of semiconductor substrate
It is laminated with photomask 13.Incident light 1 is incident from drawing left direction, advances in photoelectric conversion regions 15 and generates optical charge.By
The signal charge that photoelectric conversion regions 15 are transmitted is by the signal charge detection circuit such as SFA41 in signal-obtaining scanning circuit 19
It reads.Signal-obtaining scanning circuit 19 is formed in p-type well region domain 16.By applying driving pulse in photodiode depletion
Start to expose under state.It in this configuration, can since photoelectric conversion regions 15 and semiconductor-based plate face extend parallel to
By be used to exhaust photoelectric conversion regions 15 exhaust voltage be set to it is lower.Therefore, the driving of semiconductor camera element can be made
Voltage passes through output 31 quilt of gate terminal close to the optical charge that the two-dimentional MOS type photographing element that existing semiconductor surface exposes generates
It is transmitted to floating diffusion layer (FD) 39.Terminal 35 and 37 is respectively reseting terminal and reset drain.As a result, incident light with Z axis
Decay during advancing in semiconductor substrate on orthogonal direction.As noted previously, as can be by photoelectric conversion regions 15
Extended distance be set in the range of hundreds of μm~10mm or so, therefore can obtain to infrared light, radioactive ray etc. also have spirit
The photographing module of sensitivity.Fig. 8 (d) is different from Fig. 8 (c), is an example of the cross-section structure of CCD type semiconductor camera element.Photoelectricity
Road is transmitted as charge in the top of transition region 15, is formed with transmission electrode group 40 on a semiconductor substrate.By playing CCD type
The feature of semiconductor camera element, such as do not need segmentation and form photoelectric conversion regions 15, the charge packet of reading is also respectively provided with
Location information, therefore the spectrum analysis of accurate incident laser energy can be carried out, in addition the pixel of each charge packet adds (rejecting)
It is easy.
Fig. 9 (a) is the main portion in the photoelectric conversion part region in semiconductor camera element 270 involved in the 9th embodiment
Divide cross-section structure.As shown, in the inside for the semiconductor substrate 6 (such as p-type silicon substrate) for constituting semiconductor camera element 270
The silicon of germanic (Ge) that is represented by the dotted line is formed near the photoelectric conversion regions 15 (such as high concentration n-type silicon region) of formation
The direction in region germanium (SiGe) 24, the distribution extension direction, that is, incident light (1) parallel with real estate extends.It is shown on the right side of the figure
An example of the concentration distribution of Germanium in Si substrate thickness direction (Z-direction).The concentration of germanium is not needed in Si substrate
On thickness direction uniformly, it is distributed in the way of maximum concentration peak by Si substrate thickness direction immediate vicinity as shown in the figure.This be because
It is incident to Si substrate-side face on the left of the figure for incident light, it advances in the direction parallel with X-Y plane, that is, semiconductor-based plate face.
Such concentration distribution has the advantages that can be by the ion implanting of germanium ion (such as acceleration energy: 1~10MeV；Injection
Dosage: 10E15~10E17/ squares of cm) and thermal diffusion process thereafter be readily formed.Further, since most of incident light meeting
By the SiGe domain 24 with high concentration germanium, therefore the long wavelength of the spectral sensitivity frequency spectrum to semiconductor camera element 270
Change especially effective.By spectral sensitivity frequency spectrum shown by semiconductor camera element 270 compared with existing Si photodiode, by
The photodiode that silicon (Si) simple substance is constituted have the tendency that wavelength be more than after 900nm the longer spectral sensitivity of wavelength drastically reduce,
It may not be abundant when using in the near infrared region.According to the present embodiment, by importing germanium, the light of long wavelength side in photoelectric conversion regions
Spectral sensitivity can improve to 900nm or more, such as 1100nm or so.
Similarly, Fig. 9 (b) is the major part section knot of semiconductor camera element 271 involved in the tenth embodiment
Composition.It is characterized in that, carrying out photoelectric conversion in the photoconductive film 36 for being laminated in 271 side surface part of semiconductor camera element.I.e. half
The side surface part of conductor substrate 6 is covered by high concentration impurities layer 18 and insulating film 17, is also laminated with pixel electrode 34 at an upper portion thereof.It is right
In pixel electrode 34, when being equipped with more than two pixels (test section) along the peripheral part of above-mentioned semiconductor substrate side surface part,
It is patterned with the pixel electrode 34 of identical quantity.It is laminated with photoconductive film 36 on the top of pixel electrode 34, is further formed
There is opposite electrode 38.Opposite electrode 38 is different from pixel electrode 34, when pixel (test section) is multiple, can be used as unitary electrode shape
At, but need the material of incident light transmissive.Opposite electrode 38 can prolong in the opposite back side of the wiring layer of pixel electrode 34
Its long wiring.Insulating film 30 is formed between semiconductor substrate and opposite electrode 38.Photoconduction used in photoconductive film 36
Membrane material can select most suitable material according to lambda1-wavelength.Such as it has been known that there is cupric, indium, gallium, selenium compound semiconductors
(commonly referred to as CIGS) is the chalcopyrite based compound semiconductor of representative；It is to contain selenium, bismuth and other atoms whens X-ray detection etc.
The photoconductive film of the big element of serial number；It is amorphous silicon, organic photoelectric guided membrane etc. when visible light region.The especially photoelectricity of CIGS-based
Guided membrane also has spectral sensitivity near infrared region, therefore is also applied to the purposes other than solar battery.The photoelectricity of generation
Lotus is read from pixel electrode 34, opens gate electrode 31, is read by FD (39), then is expanded by SFA (41).The reset of FD (39) is dynamic
Work and the processing of other follow-up signals, component structure etc. are identical as embodiments described above.The semiconductor for being laminated with CIGS is taken the photograph
The spectrophotometric spectra of element 271 can make spectral sensitivity extend further to length compared with above-mentioned the case where having imported SiGe
Near the 1200nm of wavelength side.Thereby, it is possible to almost cover the wider range of the 700~1300nm of wavelength of referred to as " biological window ".
Another important feature is that is be possibly realized in the present application has the side surface part of round or hollow portion semiconductor substrate
Above, it can also pass through other physical chemistry film forming sides such as vapor deposition (CVD), vapor deposition, molecular beam epitaxy, sputtering on flexure plane
Photoelectric conversion part freely is formed in method.Thus, it is contemplated that group enters to have the semiconductor for having used the photoelectric conversion films such as CIGS camera shooting member
The application range of the photographing module of part will significantly expand.
It is main when Figure 10 (a) is the slave Y-Z plane observation of laminated type photographing module 620 involved in the 11st embodiment
Fragmentary cross-sectional view, Figure 10 (b) are the structures for light-receiving surface when illustrating the laminated type photographing module 620 from Y direction
Plan view.As shown, by semiconductor-based plate thickness (Z axis) direction be laminated semiconductor camera element 281-1,281-2,
Stacked semiconductor photographing element made of 281-3 is constituted.Here, light source portion is not shown in the figure, such as in stacking FIG. 1 to FIG. 3
In structure semiconductor camera element when, consider only in top layer or undermost semiconductor camera element be arranged light source portion
Structure, on the other hand, be laminated Fig. 4~Fig. 6 in semiconductor camera element when, can be in whole semiconductor camera elements
Upper setting light source portion is also possible to that the structure in light source portion is arranged on semiconductor photographing element in office.Semiconductor camera element
281-1~281-3 be with the same component structures such as semiconductor camera element 240,250 explained above, but due to being laminated with
More semiconductor photographing element, so through electrode portion (TSV) 30 is formed in each semiconductor camera element, so that with upper layer member
The signal of part is transmitted and is received or the electrical connection of interelement becomes easy.Through electrode portion (TSV) 30 itself is because of insulating film 43
And it is electrically insulated with semiconductor substrate.As shown, semiconductor camera element 281-1~281-3 is formed with photoelectric conversion regions 15-
21,15-22,15-23；Read gate electrode 31-1,31-2,31-3；And the part FD 33-1,33-2,33-3.By FD (33-1
Deng) read optical charge as described above by SFA (not shown) amplification after be transferred to back segment circuit.As described below, Z-direction
Multiple FD (33-1,33-2,33-3) of upper adjoining are electrically connected to each other, and can be by the structure of common SFA reading.The present embodiment
In, important technology item is as follows.Each semiconductor camera element 281-1,281-2,281- can be formed with relatively thin thickness d
3.Thickness d is, for example, 5~20 μm, and high concentration (p-type) impurity layer 12 of as component separation area and semiconductor-based back connects
The depth of touching degree.By reducing thickness d, the high resistance of used semiconductive material substrate can avoid, result can
Make the further lower voltage of driving voltage.Further, since component separation area reaches the high concentration (p-type) of semiconductor-based back
Impurity layer 12, therefore the signal electricity between adjacent photoelectric conversion regions on the direction parallel with above-mentioned X-Y plane can be prevented
The leakage (crosstalk) of lotus.In contrast, existing semiconductor camera element (in the structure of the direction incidence vertical with silicon substrate plate face)
In, if expanding photoelectric conversion region in substrate thickness direction to improve the sensitivity of red light (R), near infrared light (NIR)
Domain can not then eliminate the raising of driving voltage and cause to go here and there to adjacent pixel leaks in the signal charge that substrate deep generates
The problem of disturbing increase.
The formation of this structure not only component separation area 26 is easy, the shape in photoelectric conversion regions 15 or through electrode portion 30 etc.
It also becomes easy at process, therefore is advantageous from the point of view of manufacture view.This structure is investigated from other sides below.Figure 10 (b)
X-Z when being the side surface part of the light receiving side from the stacked semiconductor photographing element portion of photographing module 620 from Y direction
Plan view.Due to being laminated with photographing module 281-1~281-3, the dimension D in thickness (Z axis) direction is photographing module 281-1
The thickness of~281-3 adds the size of adhesive layer.On the other hand, the size W in the X-direction of each light-receiving surface is above-mentioned photographing module
Size in 281-1~281-3 in the X-direction of each light-receiving surface.In the present embodiment, such as in the light area surrounded by dotted line
In 45, preferably W is identical size with D.In other words, it may be said that be by the size of existing single pixel (acceptance part) be horizontal W, vertical
The structure of D only three structures being split to form on vertical (Z axis) direction.Due to being originally single pixel (single acceptance part), so
By the signal for the pixel portion i.e. 3 layer photoelectric conversion part being split to form from three, pass through the circuit structure in the shared portion FD described below
At summing up, export.It, can also be by increasing the half of stacking even the size of light area 45 such as 30 μm of 30 μ m
Conductor photographing element number reduces the thickness d of each semiconductor camera element.As a result, being easy to make reading voltage of optical charge etc.
The further lower voltage such as driving voltage.When such as the present embodiment is laminated 3 in this way, 10 μm of thickness d or so can be made.It is logical
The thickness d for reducing semiconductor camera element in this way is crossed, component separation area, photoelectric conversion regions, through electrode portion etc. can be played
Special-effect easy to form.
Figure 11 (a) is the main of the semiconductor camera element portion that photographing module 630 involved in the 12nd embodiment uses
Cut-away section structure chart.Light source portion is not shown, the top or lower part of the semiconductor camera element after being mounted to stacking
Structure, or light source portion can also be configured at the position for eliminating a part of photoconductive film described below.Photographing module 630
The laminated type photographing module constituted by structure made of multiple semiconductor camera elements (291-1,291-2,291-3) is laminated,
Photoconductive film 36 is connected on pixel electrode (34-1,34-2,34-3) and is connected opposite electrode 38 at an upper portion thereof and is integrally formed.
In addition, being laminated with the peripheral circuit element 292 being made of driving circuit, signal processing circuit etc..I.e. by imaging semiconductor
Duplicate circuit etc. is arranged on peripheral circuit element 292 in element 291-1,291-2,291-3, can simplify semiconductor camera shooting
The structure of element 291-1,291-2,291-3 or easy specialization go out to be best suited for the component structure and system of photoelectric conversion regions
Make technique.As shown, semiconductor camera element 291-1,291-2,291-3 be formed with pixel electrode 34-1,34-2,34-3 and
Gate electrode 31-1,31-2,31-3 and FD39 are read, FD39 is by through electrode (TSV) 30 in semiconductor camera element
It is shared between 291-1,291-2,291-3.Moreover, the optical charge read by FD39 is by after the SFA41 amplification on semiconductor element 292
It is transferred to subsequent conditioning circuit.As shown in the equivalent circuit of Figure 11 (b), FD39 is shared, reads gate electrode 31-1,31-2,31-
3 independent functions, therefore any one of can choose semiconductor camera element 291-1,291-2,291-3 and be read out,
Or it is read again after the signal charge from multiple semiconductor camera elements can also being added.According to this structure, it is desirable to
When increasing resolution of the light-receiving surface number (pixel number) on semiconductor-based plate thickness direction to improve the direction, reading respectively,
In the case that input light intensity level is low, sensitivity can be improved by adding, therefore can be by sensitivity, resolution, dynamic
The expansion etc. of range is set to suitable characteristic.When manufacturing this stacked semiconductor photographing element 630, work can be laminated in wafer
Photoconductive film and the opposite electrode of upper part 38 are formed in above-mentioned multiple semiconductor camera elements (291-1~291-3) after sequence
On, there is no need to which photoconductive film etc. is laminated respectively to each semiconductor camera element, photoconductive film quality deterioration etc. can be led
The factor for causing yield rate low is suppressed to minimum, and can simplify manufacturing process to reduce manufacturing cost.
Using Figure 12 to the main of semiconductor camera element used in photographing module 640 involved in the 13rd embodiment
Part is illustrated.Light source portion is not illustrated, what is illustrated in FIG. 1 to FIG. 3 can be used to be mounted on semiconductor camera element top
Or the structure of lower part；Or the structure for being mounted on semiconductor substrate side surface part illustrated in Fig. 4~Fig. 6 etc..It is public in the present embodiment
Long wavelength's sensitivity of the sensitivity, particularly 700nm or more that can improve photoelectric conversion part and the new-type element of crosstalk are opened
Structure.As shown in Figure 12 (a), semiconductor camera element portion is laminated with optical component in the side surface part of semiconductor substrate.That is light
Department of the Chinese Academy of Sciences's part 46 is convex lenticule, and optical component 47 is concave type macro-lens, and optical component 48 is the different component (48-1 of refractive index
And 48-2) constitute optical waveguide.Material used in lenticule etc. can be selected according to the wavelength etc. of incident light, but especially be needed
It is noted that the wavelength dependency of refractive index.In the present embodiment to simultaneously used the example of these three optical components to be schemed
Show, can also suitably be selected according to the Calculation of Optical Path etc. any.Other structures carry out in the embodiment of Fig. 8 (c), Fig. 9 (a) etc.
Explanation.It is preferred that lenticule is configured that the incident light across lenticule central part can be by semiconductor-based plate thickness (Z axis)
On direction with the position of semiconductor substrate surface distance d1.Here, d1 is the thickness of semiconductor camera element in the Z-axis direction
Spend about the 1/2 of d.Thereby, it is possible to expeditiously assemble incident light to improve sensitivity, in this point and existing photographing element
The effect of lenticule is similar, but should be noted that this structure may also function as special-effect described below.In i.e. existing photographing element, enter
Light is penetrated from the incidence of the Z-direction top of same figure and passes through photoelectric conversion regions 15 towards semiconductor substrate bottom surface direction.But it is special
It is not in the case where the long wavelength light of 700nm or more, when using silicon substrate, it is necessary to by the thickness d and light that expand silicon substrate
The depth of electric transition region 15 ensures sensitivity.So, manufacturing process need to use with general CMOS manufacturing process not
Same technology need to also import special material in high resistance substrate etc., and increase this in face of not can avoid driving voltage etc.
The serious problem of kind.Even if photoelectric conversion regions 15 is made to be formed deeper, crosstalk between adjacent photoelectric conversion regions can be generated on the contrary
The drawbacks of increase.In contrast, in the present embodiment, incident light 1 with it is near the photoelectric conversion regions 15, with X-Y plane
The mode of the depletion layer area 49 of parallel direction Z-direction expansion is advanced from right direction on the left of the figure, and there is no need into one
Step, which expands silicon substrate plate thickness d, can be realized as efficient photoelectric conversion.It is being because by photoelectric conversion regions 15 in above-mentioned incidence
It is that can be solved with common patterning (photoetching) that the range that length on light direction is set as 5~100 μm of (design), which carries out manufacture,
Certainly the problem of.In addition, incident light can be nearly all distributed by depletion layer area 49, i.e. germanium (Ge) high concentration as shown in Fig. 9 (a)
Region 24, therefore also it can be expected that further increasing the effect of long wavelength light sensitivity.The three-dimensional shape of lenticule 46 etc. can be with
It is known as the shape of " semicircle cone-shaped " or biconvex lens.It should be noted that in composition (such as the Fig. 9 for having used photoconductive film
(b), Figure 10 (a) etc.) in, since so-called aperture opening ratio is sufficiently large, so it is not absolutely required to micro- from the viewpoint of sensitivity
Lens can be by above-mentioned optical component to prevent the incident angle dependence of incident light 1 or to the light intrusion etc. of adjacent pixels
It is layered on photoconductive film.
Figure 12 (b) is that semiconductor used in photographing module 641 involved in the variation of the structure of above-mentioned Figure 12 (a) is taken the photograph
The major part sectional view of element.It in the present embodiment, is characterized in that, the optics of the optical components such as lenticule in the Z-axis direction
1/2 small (d2 < d1) of the position at center with semiconductor camera element surface distance d2 than the thickness d of semiconductor camera element.
Ge when according to this structure, SiGe forming region 24 can be formed more shallowly in the Z-axis direction, therefore can reduce ion implanting
The acceleration energy of ion realizes low temperature or the short time of heat treatment procedure.In addition, as shown, by utilizing lenticule etc.
Condensing optical system is carefullyyer bunched by the light beam of incident light, so as to the highest area of cover Ge ion distribution concentration
Domain.According to this structure, the thickness d of semiconductor substrates such as silicon substrate itself can be further decreased, as a result, it is possible to realize element
The formation of separated region 26, the i.e. aufhellung of component separation area 26 in the Z-axis direction, while can be realized further improvement crosstalk
Deng effect, and the sensitivity improving to long wavelength lights such as near infrared lights.
It is illustrated using another important feature of the Figure 12 (c) to the photographing element with lenticule.Figure 12 (c) is from Z
Axis direction observes X-Y plane figure when semiconductor camera element portion used in photographing module 650.In semiconductor camera element
Side surface part and Figure 12 (a), (b) are identically formed with lenticule 46,47.For purposes of illustration only, being shown in figure at one without micro-
The acceptance part of lens.To the acceptance part incidence with lenticule light almost each along the extending direction (Y of photoelectric conversion part 15
Axis) it advances, the risk for invading adjacent photoelectric conversion regions 15 is small.On the other hand, as shown, not having the light of lenticule
In portion, the incident light invaded with the incidence angle different from Y direction is especially the long wavelength light of above-mentioned 700nm or more the case where
Under, incident light 1 is not decayed substantially, thus the risk of generation optical charge becomes larger and increases in adjacent multiple photoelectric conversion regions 15
Big crosstalk.For the optical charge generated near photoelectric conversion regions 15 or depletion layer area 49, above it is stated that can lead to
Crossing component separation area 26 prevents from leaking to adjacent photoelectric conversion regions 15.There is this structure of optical component by combining, also
It is able to suppress incident light itself to leak to adjacent photoelectric conversion regions 15, therefore the long wavelengths such as near infrared light can be solved simultaneously
The sensitivity improving and clutter reduction of light.
710 perspective view of stereo camera shooting module and its 3-D walls and floor involved in the 14th embodiment of the present invention are shown in
Figure 13 (a).Stereo camera shooting module 710 is by entering cylinder-shaped branch for photographing module 110a, 110b, 110c, 110d, 110e, 110f group
Structure made of support body 171 is constituted.Photographing module 110a, 110b, 110c, 110d, 110e, 110f are with partly leading with light receiving window
Structure base board side surface part and the mode of columnar centerline parallel are fixed.Photographing module 110a, 110b, 110c, 110d, 110e,
The photographing module being equal with the photographing module 110 (Fig. 1) illustrated in first embodiment for example can be used in 110f.It should be noted that this
In figure, photographing module 110d, 110e, 110f are hidden in cylindrical support body 171 so can't see.Here three-dimensional is redefined
Reference axis U, V, W.As shown, if the center line of cylinder is defined as U axis direction, it is suitable with the upper surface of cylinder, lower surface
Plane be then V-W plane.Stereo camera shooting module 710 is equivalent to portion rack (Gantry) in X ray CT device.Therefore, lead to
Crossing keeps subject (not shown) mobile to arrow direction inside stereo camera shooting module 710, can rebuild the tested of three-dimensional shape
The three-dimensional tomographic image of body.That is, being suitable as the framework portion of light CT device.By cuing open in the V-W plane of stereo camera shooting module 710
Face is illustrated in Figure 13 (b).Photographing module 110a, 110b, 110c constitute compound photographing module 173, similarly, photographing module
110d, 110e, 110f constitute compound photographing module 175.The compound configuration of photographing module 173 and 175 is opposite to each other in cylindrical shape
The symmetrical position in the center of supporter 171.Compound photographing module 173 and 175 is revolved by the center line around supporter 171
Turn, the faultage image of subject 171 can be rebuild, furthermore by making subject 172 or stereo camera shooting module 710 in U axis direction
Upper movement can obtain multiple faultage images.For example, the emergent light 3a straight line from photographing module 110a, which is advanced, becomes camera shooting mould
The incident light 1a of block 110d is detected, and similarly the emergent light 3d straight line from photographing module 110d, which is advanced, becomes photographing module
The incident light 1d of 110a is detected.At this point, by changing emergent light 3a and 3d wavelength, based on being detected intracorporal different optical physics
Matter can obtain the information of more detailed molecular level.It is taken the photograph it should be noted that having been used in this figure containing the compound of multiple photographing modules
Picture module 173,175, therefore between adjacent photographing module (such as 110a and 110c), the emergent light that a side projects can be by another
Side detects, so that the diffused light near subject surface can also be detected.To simplify device, opposed one can also be used only
To photographing module (such as 110a and 110d).This is because 360 ° of scannings can be carried out by rotary stereo photographing module 710.
Figure 13 (c) is the V-W plan view for indicating the stereo camera shooting module 720 of other variations of the 14th embodiment.It is vertical
Body photographing module 720 is by entering cylindrical shape for multiple radial groups at equal intervals of photographing module 110 (including 110p, 110q, 110r)
Structure made of in supporter 171 is constituted.The photographing module 110 that group enters is with semiconductor substrate side surface part and circle with light receiving window
The mode of the centerline parallel of tubular supporter 171 is fixed.Photographing module 110 for example can be used and illustrate in first embodiment
The equivalent photographing module of photographing module 110 (Fig. 1).It is formed on V ー W plane visual angle around 360 ° of encirclement subjects 172
Structure.Therefore, there is no need to that stereo camera shooting module 720 is made to rotate the small-size light-weight that device itself can be realized around subject
Change.Stereo camera shooting module 720 be applicable to diffusion optical tomographic imaging apparatus (Diffused Optical Tomography,
) and other smooth CT devices DOT.Such as internal diffusion and propagation of the infrared light 3 of photographing module 110p injection in subject 172,
It is detected in photographing module 110r as incident light 1.In addition, the diffused light of other a part passes through cancerous tissue 174 and propagates,
It is detected in photographing module 110q as incident light 1.Using in normal tissue and cancerous tissue 174 based on subject 172
The image reconstruction algorithm of the difference of the absorption coefficient of light, diffusion coefficient, can it is noninvasive and not by radioactive ray irradiation make cancerous tissue 174
Presence visualization.In addition, also acting as the special-effect that can be used for fluorescence CT device.
The perspective view and its 3-D walls and floor of stereo camera shooting module 810 involved in the 15th embodiment of the present invention are shown
In Fig. 9 (a).4 of configuration of the stereo camera shooting module 810 by using photographing module 180a, 180b, 180c and for determining them
The structure that 181 solid of supporter assembles is constituted.The structure of photographing module 180a, 180b, 180c phase with Fig. 5 (a) and (b)
Together, as light source, preferably LED or LD.In addition, photographing module 180a, 180b, 180c have the circular hollow portion of diameter R.Come
It can be connect from the signal wire of each photographing module via connector portion 182 with external image processing system (not shown).The present embodiment
It is to constitute the semiconductor substrate of the semiconductor camera element in each photographing module and is detected with the distinctive points of the embodiment of Figure 13
The positional relationship of body.I.e. in the present embodiment, to pass through subject in the hollow region in photographing module, photographing module is curved
Bent semiconductor substrate side is the structure that comprehensive (360 ° of directions) surrounds subject, in contrast, in the embodiment of Figure 13,
Photographing module (110a, 110b, 110c etc.) relative to the structure of subject center position radial configuration by constituting.Therefore,
In stereo camera shooting module 810 shown in Figure 14 (a), does not need the radial accurate configuration of multiple photographing modules or make to image
Module rotates around subject.Therefore, spatial position precision is high and can realize miniaturization, is suitable for portable DOT etc.
Light CT device or optical charting device.
The solid of stereo camera shooting module 820 involved in the variation of 15th embodiment is illustrated in Figure 14 (b).It is three-dimensional
Photographing module 820 is made of photographing module 180d, 180e, 180f that the diameter in circular hollow portion is respectively R1, R2, R3.Respectively take the photograph
As module is supported by the supporter 183 that elastomeric element is constituted.Supporter 183 is in snake abdomen shape, can continuously to change, adjust camera shooting mould
The structure of distance between block.There is connector portion 182 in the same manner as with Figure 14 (a) the case where.In addition, can using semiconductor photolithography
The hollow portion diameter of photographing module 180d, 180e, 180f are easily changed to such as diameter R1, R2, R3 (R1 > R2 > R3).Cause
This, can obtain being suitable for light CT device, particularly mammary gland X-ray shooting device, using brain as the knot of the optical charting device of object
Structure.Other than hollow portion diameter, the distance of (U axis direction) is also changed between photographing module, therefore is easy to cater to subject
Shape can be improved the precision of accurate spatial positional information, and can expeditiously send the emergent light from light source
To inside subject.
The side view of stereo camera shooting module 910 and its two-dimensional coordinates involved in the 16th embodiment of the present invention are shown
In Figure 15 (a).Stereo camera shooting module 910 as described below, by photographing module 190a, 190b, 190c, 190d, 190e, 190f,
190g, 190h are constituted.In this figure, 190a and 190e are for ease of illustration illustrated only.Photographing module 190a, 190b, 190c,
190d, 190e, 190f, 190g, 190h are surrounded tested as shown in the figure for example using the composition of photographing module shown in Fig. 4 (a)
Body (such as head).Plan view when Figure 15 (b) is from top top perspective photographing module 910.Photographing module 190a, 190b,
190c, 190d, 190e, 190f, 190g, 190h using any as center radial configuration, and in addition to photographing module 190e with
Other than between 190f, connected each other by the arc-shaped supporter 193 containing elastomeric element.It is stretched by the supporter 193 of arc-shaped
Contracting can open and close around subject in snake abdomen shape.With the 15th embodiment the difference lies in that each photographing module can be configured to court
To the overhead of domed shape cover subject, therefore can further expansion three-dimensional inspection area, thus by check less than
Dead zone minimizes.Therefore, it in addition to features described above, is drawn for mammary gland X-ray shooting device, with cerebration etc. for the optics of object
Map device etc. is especially effectively.
The solid of stereo camera shooting module 920 involved in the variation of 16th embodiment is illustrated in Figure 15 (c).It is three-dimensional
Photographing module 920 is the structure after further improvement stereo camera shooting module 910.Each photographing module of stereo camera shooting module 910
(190a~190h) if be the structure being arranged radially in longitudinal by taking tellurion as an example, and three-dimensional photographing module 920
It is structure made of further also combining the photographing module of multiple annulus shapes on latitude direction.Arranged in longitudinal
Photographing module 195 be, for example, make photographing module shown in Fig. 4 (a) periphery become arc-shaped structure, on latitude direction
Photographing module 197-1,197-2,197-3 of arrangement are for example as making to tie made of the diameter of photographing module shown in Fig. 6 (a) is different
Structure is constituted.According to this structure, body is write for three-dimensional structure, with high position accuracy and can be in net-like configuration light source portion and light
High spatial position precision and resolution ratio can be obtained in test section in acquired image information or reconstruction image.With it is above-mentioned
Each photographing module similarly, can be configured to the domed shape or helmet shape of covering subject entirety, therefore needle by embodiment
To three-dimensional check object can eliminate check less than dead zone.Therefore, in addition to the features described above, photograph for breast X-ray
Device also functions to special-effect with cerebration etc. for optical charting device of object etc..
The overall structure of light ultrasonic imaging apparatus 1000 involved in 17th embodiment of the invention is shown in figure
16(a).Light ultrasonic imaging apparatus 1000 is visualized by the master station 1001 of control image pickup probe 1005, by photographed images
Image displaying part 1003 and the cable 1009 that image pickup probe 1005 is connect with master station 1001 is constituted.Image is taken the photograph
Probe 1007 is imaged as probe 1005 has in its front end, is furthermore built-in with camera shooting mould in the inside of camera shooting probe 1007
Block 198.As described below, photographing module 198 is combined with ultrasound examination portion 510.I.e. as shown in the perspective view of Figure 16 (b), take the photograph
Picture module 198 is for example same as photographing module 120 shown in Fig. 2, and the light-receiving surface of semiconductor camera element 220 is the shape of convex
Shape, it is integrated with the light sources portion 320 such as optical fiber, LD.As shown, being laminated with ultrasound examination portion on the top of photographing module 198
510, the ultrasonic wave exit facet in ultrasound examination portion 510 is also the shape of convex in the same manner as photographing module 198, and from Z axis side
To when observation, it is laminated in the mode that ultrasonic wave exit facet is roughly the same with the light-receiving surface of photographing module 198.
It is further described using the sectional view of Figure 16 (c).Figure 16 (c) is the position of dotted arrow H-H ' in Figure 16 (b)
The sectional view set.As described above, photographing module 198 has the light of the light by sending out LD or LD on semiconductor camera element 220
The light source 320 that fibre is constituted, is laminated with ultrasound examination portion 510 above it.The cross-section structure of semiconductor camera element 220 exists
Explanation in Fig. 2 (b).By going out front end i.e. light-receiving surface, the light exit portion of light source, the ultrasonic wave of 320 photographing module 198 of light source
The movement of 1011 ground of the subjects such as abdomen is tightly attached in the portion of penetrating, and can carry out the absorption diffusion of ultrasonography and near infrared light simultaneously
Deng spectrum analysis.That is, being detected intracorporal absorber of light expansion if irradiating near infrared pulsed laser 3 to subject 1011
Thermoelastic distortion can be generated when with recovery, generates ultrasonic wave corresponding with the absorptivity of light and the irradiation pulse width of laser pulse
5.By detecting the section of generated ultrasonic wave 5 with supersonic detector 510,3-D image can be rebuild.By using this light
Ultrasonic imaging apparatus, it can be achieved that will not by radioactive ray irradiate, check device that is noninvasive and not needing contrast agent, such as by with
Ultrasonic wave picture overlappingly draws the angiogenesis of cancer, can and accurately determine out the lesions such as early stage cancer cell in pole early stage
Position.It is lower than normal tissue new blood vessel and oxygen concentration to be manufactured on tissue periphery when known cancer cell multiplication.Thus, for example
This 3 kinds of 797nm, 756nm, 825nm is selected as near-infrared wavelength.For the near infrared light of wavelength 797nm, oxygenated blood red eggs
It is white identical as the absorption coefficient of deoxyhemoglobin, therefore the distribution of the image display hemoglobin obtained by the wavelength.And it is right
It is big in the absorption coefficient of the near infrared light of wavelength 756nm, deoxyhemoglobin, for the near infrared light of wavelength 825nm, oxygenated blood
The absorption coefficient of Lactoferrin is big, and the oxygen saturation of tissue can be measured using the phenomenon, to would know that the development degree of cancer.By
This, in addition to can be other than early detection breast cancer, prostate cancer etc., also with following special-effect: can be achieved patient pain and
The mitigation of burden, or lesions position can be also reliably determined when acquiring tissue.
In addition, by using optical contrast agent, when the exciting light (wavelength X 3) sent out from photographing module 198 is irradiated in tissue
Optical contrast agent (also referred to as fluorescence probe) when, the fluorescence (wavelength X 1) of sending can be detected by photographing module 198.It should say
It is bright, such as wavelength X 3 is the near infrared light shorter than wavelength X 1.Thereby, it is possible to realize can obtain simultaneously common ultrasonography,
Ultrasonography based near infrared light, based on multiple and different images such as the light activated near-infrared fluorescent images of near-infrared or
Multi-functional or compound (mixing) diagnostic imaging or spectral analysis device of spectral analysis information.
The endoscope structure of light ultrasonic endoscope device 1020 involved in 18th embodiment of the invention is shown
In Figure 17 (a).Group enters to have in the endoscope probe front end 1021 of light ultrasonic endoscope device 1020 examines with ultrasonic wave
The photographing module 199 in survey portion 520.The circle photographing module 161 as shown in Fig. 6 (b) of photographing module 199, its underpart installation
Round ultrasound examination portion 520, circular mounting substrate 1025 and communication power supply cable 1023 are constituted.It should be noted that conduct
Light source 361 used in photographing module 161, it is possible to use the light source being made of organic LED film illustrated in the embodiment of Fig. 5
Portion replaces and (being made of inorganic crystal material) LED, LD.Since fexible film pedestal can be used, so being especially inserted into
It is required that being easy when the periphery Curvature varying of photographing module 161 is larger in the case where in the endoscope probe of thinning
It is corresponding.Ultrasound examination portion 520 is centripetal radiation mode, is made of layered transducer elements, acoustic matching layer, acoustic lens etc..In ultrasonic wave
Installation base plate 1025 is arranged at the lower part of test section 520, and signal wire, power supply line from photographing module 161 etc. are via ultrasound examination
The cylinder interior in portion 520 is connect with installation base plate 1025.Similarly, signal wire, power supply line from ultrasound examination portion 520 etc.
Also it connect with installation base plate 1025, is finally connected with communication power supply cable 1023.Semiconductor camera element is (with Fig. 6 as a result,
(b) 261 are quite), light source portion (quite with the 361 of Fig. 6 (b)) and ultrasound examination portion 520 can comprehensive (360 ° of sides
To) near infrared light injection (3), incident light detection (1), ultrasonic wave injection (not shown), ultrasound examination (5) are carried out, it realizes
Its outer shape is structure that is round and being easy thinning.It should be noted that camera shooting principle is identical as the 17th embodiment, spy is provided
It is not suitably inserted into the photographic device of the endoscope used in vivo, capsule endoscope, laparoscope, conduit etc..
The ideograph of light ultrasonic endoscope device 1020 obtains involved in present embodiment camera picture will be used
1027 are shown in Figure 17 (b).The region 1031,1033,1035 surrounded by dotted line is to have found some abnormal regions.The light of solid line
Spectrum 1029 indicates the intensity distribution of the incident near infrared light obtained by near-infrared fluorescent spectrum analysis.That is, by using fluorescence is contained
The optical contrast agent of probe material, when the exciting light (wavelength X 3) sent out from photographing module 199 is irradiated to cancerous tissue within the organization
When the optical contrast agent of equal aggregations, the fluorescence (wavelength X 1) of sending is detected by semiconductor camera element 161, obtains spatial distribution
1029.It should be noted that wavelength X 3 is shorter than wavelength X 1.Therefore, the outgoing light wavelength from light source portion is preferably imaged than semiconductor
The short wavelength of peak wavelength in the sensitivity spectrum of element.In Figure 17 (b), such as region 1031 passes through common ultrasonic wave
Camera shooting observed diseased region (site part), but since spatial distribution 1029 does not show higher value, so benign cancer group
A possibility that knitting is larger.And in region 1033, in addition to the abnormal position (site part) obtained by common supersonic detector
Except, also overlapping, which is described, the abnormal position (black portions) based on the ultrasonic signal generated by near infrared light.Known to
The value of fluorescence spectrum (1029) based near infrared light also increases.In region 1035, not observing should be by common super
The abnormal position (site part) that sound wave detector obtains, only describing has based on the ultrasonic signal generated by near infrared light
Abnormal position (black portions), and the value of the fluorescence spectrum (1029) based near infrared light also increases.As a result, using logical
The cancerous tissue that normal supersonic detector can not be found can pass through the ultrasonic wave of the near infrared light generation by photographing module 199
Signal is found.In addition, realizing the mixing ultrasonic endoscope device that can play following effect for the first time.That is, pass through while obtaining
The near infrared light fluorescence spectrum (1029) obtained, can know the development degree of cancerous tissue of abnormal position etc. together.As a result, can
Expect the malignant tumour such as cancer of pancreas of especially locations deep within the body.The early detection of cholangiocarcinoma and other minimal diseases.
Industrial availability
It is mainly illustrated centered on medical field above, but photographing module according to the present invention and photographic device
It is useful in the biochemical fields such as animals and plants, various products, food and other industrial circles.
Description of symbols
1 ... comes the emergent light of self-emitting light source, 4 ... ultrasonic waves to the incident light of acceptance part irradiation, 2 ... acceptance parts, 3 ...
Detect window, 5 ... ultrasonic waves, 6 ... semiconductor substrates, the insulating layer of 7 ... semiconductor substrate surfaces, 8 ... photoelectric conversions
The high concentration P-type semiconductor region of region surface, the insulating layer of 9 ... semiconductor-based backs, 10 ... dimpling blocks, 11 ...
The miniature weld pad of engagement pad, 11m ..., the high concentration P-type semiconductor region of 12 ... semiconductor-based backs, 13 ... photomasks
Layer, the light-shielding film layer of 14 ... semiconductor substrate side surface parts, 15,15-1~15-3, the photoelectric conversion region 15-21~15-23 ...
Domain, 16 ... p-type traps, the insulating film layer of 17 ... semiconductor substrate side surface parts, 18 ... semiconductor substrate side surface parts it is highly concentrated
Spend P-type semiconductor region, 19 ... charge reader circuit portions, 20 ... with line-group, 21 ... timing pulse generation circuits,
22 ... insulating films, 23 ... A/D converter circuits, 24 ... SiGe domains, 25 ... digital signal processing circuits, 26 ... members
Part separated region, 27 ... interface circuits, 28 ... insulating films, 29 ... buffer storage blocks, 30 ... through electrodes,
31 ... output grids, 32 ... adhesive layers, 33 ... high concentration N-type semiconductor regions, 34 ... pixel electrodes, 35 ... are again
Position terminal, 36 ... photoconductive films, 37 ... reset drains, 38 ... opposite electrodes, 39 ... floating diffusion layers or
Floating diffusion (FD), 40 ... charge transmission electrodes, 41 ... cd amplifiers (SFA), 43 ... perforations
The insulating film of surrounding them, 44 ... external electrodes, 45 ... light areas, 46 ... convex lenticules, 47 ... concaves are micro-
Lens, 48 ... optical waveguides, 48-1, the different component of 48-2 ... refractive index, 49 ... depletion layer areas, 110,120,130,
140,150,160,161,110-a~110-r, 140-1~140-4,150-1~150-3 ... camera shooting according to the present invention
Module, 171 ... racks, 172 ... subjects, 141,162,173,175 ... compound photographing modules, 174 ... indicate quilt
The round light-receiving surface of region, 180-a, 180-b, 180-c ... with diameter R of different photophysical properties inside a specimen is taken the photograph
As module, 180-d, 180-e, 180-f ... are respectively provided with diameter R1, R2, the photographing module of the round light-receiving surface of R3,
181 ... determine the supporter of photographing module configuration, 182 ... for stereo camera shooting module and external image processing system is electric
The supporter containing elastomeric element, the 190-a~190-h ... that the connector portion of connection, 183 ... decision photographing modules configure take the photograph
As module, 193 ... determine the camera shooting of the arc-shaped supporter, 195 ... arc-shapeds containing elastomeric element of photographing module configuration
Module, the cyclic annular photographing module of 197-1,197-2,197-3,197-4 ..., 198,199 ... taking the photograph with ultrasound examination portion
As module, 210,220,230,240,250,260,261,270,271 ... constitute semiconductor camera shooting mould according to the present invention
The semiconductor camera element of block, 292 ... peripheral circuit elements, 310,320,330,340,350,360,361 ... constitute this
The light source portion of photographing module involved in inventing, 321 ... optical fiber mounting portions, 341 ... light source exit facet central parts,
The peace that 351 ... light source exit portion, 352 ... colored filters, 430,440 ... constitute photographing module according to the present invention
Dress substrate, 510,520 ... ultrasound examination portions, 610,620,630,640,650 ... laminated types according to the present invention are taken the photograph
As module, 710,720,810,820,910,920 ... stereo camera shooting modules according to the present invention, 1000 ... institutes of the present invention
The light ultrasonic imaging apparatus that is related to, 1001 ... ultrasonic imaging apparatus master stations, 1003 ... image displaying parts,
1005 ... camera shooting probes, 1007 ... camera shooting probes, 1009 ... cables, 1011 ... diseased regions, 1020 ... are originally
Light ultrasonic endoscope device, 1021 ... endoscope probe front ends involved in inventing, 1023 ... communications and power supply line
Cable, 1025 ... installation base plates, 1027 ... camera pictures, 1029 ... incident near infrared light intensity distributions, 1031 ... lead to
Abnormal position, 1033 ... the abnormal portions based on common ultrasonography and light ultrasonography in normal ultrasound image
Position, 1035 ... the abnormal positions based on light ultrasonography
Claims (27)
1. a kind of photographing module, wherein the face for being formed with integrated circuit on a semiconductor substrate is defined as X-Y plane, should
When the thickness direction of semiconductor substrate is defined as Z axis, using the side face positioned at X-Z plane of the semiconductor substrate as by
Multiple photoelectric conversion parts of smooth surface are formed in the semiconductor-based intralamellar part along the Y direction in the semiconductor substrate, and
And one or more light source portions are installed on the X-Y plane of the semiconductor substrate, and the light outgoing side in the light source portion
It is Y direction to identical as the extending direction of the photoelectric conversion part.
2. a kind of photographing module, wherein the face for being formed with integrated circuit on a semiconductor substrate is defined as X-Y plane, should
When the thickness direction of semiconductor substrate is defined as Z axis, have the side parallel with the Z-direction of the semiconductor substrate
Photoelectric conversion part of the face as light-receiving surface, and the shape of the side surface part side of the semiconductor substrate as the light-receiving surface is only
The convex or convex curve on the X-Y plane visual angle, and on the X-Y plane of semiconductor substrate have one or
Multiple light sources portion, with the consistent side of normal direction of the light-receiving surface immediately below the light exit direction in the light source portion and the light source portion
The light source portion is mounted on the semiconductor substrate by formula.
3. photographing module as claimed in claim 1 or 2, wherein in the semiconductor-based plate face for being formed with the integrated circuit
Back side has the light source portion.
4. the photographing module as described in claims 1 to 3 favorite one, wherein the semiconductor substrate and the light source portion it
Between be laminated with installation base plate.
5. a kind of photographing module, wherein the face for being formed with integrated circuit on a semiconductor substrate is defined as X-Y plane, should
When the thickness direction of semiconductor substrate is defined as Z axis, have the side parallel with the Z-direction of the semiconductor substrate
Photoelectric conversion part of the face as light-receiving surface, and one or more is installed on the side face parallel with the Z-direction
Light source portion.
6. photographing module as claimed in claim 5, wherein connect the pixel center of the pixel array arranged in the light-receiving surface
The line connect is located on the same plane parallel with the X-Y plane with by the line of the center connection of the light source portion light exit portion.
7. such as photographing module described in claim 5 or 6, wherein the side of the semiconductor substrate as the light-receiving surface
The shape in the portion only convex or convex curve on the X-Y plane visual angle.
8. such as photographing module described in claim 5 or 6, wherein the side of the semiconductor substrate as the light-receiving surface
The shape in portion is round on the X-Y plane visual angle.
9. a kind of photographing module, wherein the face for being formed with integrated circuit on a semiconductor substrate is defined as X-Y plane, should
When the thickness direction of semiconductor substrate is defined as Z axis, the central portion of the semiconductor substrate has on the X-Y plane visual angle
In the circular hollow region of Z-direction perforation and using the inner wall part of the hollow region as multiple photoelectricity of light-receiving surface
Converter section, and light source portion is installed in the inner wall part of the hollow region.
10. the photographing module as described in any one of claim 5~9, wherein with the light-receiving surface side surface part or institute
The inner wall part for stating hollow region has grooving portion, is inserted into the grooving portion and is stated light source portion.
11. photographing module as claimed in claim 9, wherein the outer shape of the semiconductor substrate is regarded in the X-Y plane
It is round on angle.
12. the photographing module as described in any one of claim 1~11, wherein the semiconductor substrate is silicon substrate, described
Photoelectric conversion part is formed in the silicon substrate, and contains germanium in the photoelectric conversion part.
13. the photographing module as described in any one of claim 1~12, wherein be laminated with lenticule on the light-receiving surface
Or optical waveguide or the optical component for being composed them.
14. photographing module as claimed in claim 13, wherein have in the Z-direction from the formation of the semiconductor substrate
The face of integrated circuit to the optical component optical centreline position distance than the semiconductor substrate in the Z axis side
The 1/2 of upward thickness is smaller.
15. the photographing module as described in any one of claim 2,5,9, wherein by the semiconductor substrate and the Z axis
The parallel side face in direction is sequentially laminated with picture in the semiconductor substrate side surface part as the photoelectric conversion part of light-receiving surface
Plain electrode, photoconductive film and opposite electrode.
16. more than two claims 5 are laminated by electrical connection means in the Z-direction in a kind of laminated type photographing module
Photographing module described in any one of~15.
17. laminated type photographing module as claimed in claim 16, wherein adjoining is more than two floating in the Z-direction
Diffusion layer region is set to be electrically connected to each other.
18. laminated type photographing module according to claim 16 or 17, wherein each photographing module of stacking is in the Z axis
On direction with a thickness of 3 microns or more and 20 microns hereinafter, size of the acceptance part of each photographing module in the Z-direction with
And total institute with the acceptance part of each photographing module on the direction parallel with the semiconductor-based plate face of the thickness of adhesive layer
The width for stating acceptance part is equal.
19. a kind of laminated type photographing module, photographing module described in any one of one or more claims 5~15 or
On laminated type photographing module described in any one of person's claim 16~18, in the Z-direction by electrical connection means into
One step is laminated with peripheral circuit element.
20. as described in any one of photographing module or claim 16~19 as described in any one of claim 1~15
Laminated type photographing module, wherein project near infrared light in the light source portion.
21. a kind of smooth CT device, wherein using stereo camera shooting module as framework portion, the stereo camera shooting module has following knot
Structure:
It columnar center line is defined as U axis direction, is defined as the columnar upper surface or lower surface defining
When the 3-D walls and floor of V-W plane, by multiple photographing modules described in claim 1 with the semiconductor substrate side with light receiving window
It is facial with the columnar centerline parallel, and on V-W plane angle relative to the center line at the side of symmetric position
Formula group enters columnar supporter.
22. a kind of smooth CT device or optical charting device, wherein it has with stereo camera shooting module, the stereo camera shooting module
Such as flowering structure:
U axis direction is defined as, by the vertical with the U axis direction of the domed shape defining the center line by domed shape
Plane in one when being defined as the 3-D walls and floor of V-W plane, by the shape of the side surface part described in claim 2 or 7
Shape is that concave more than two photographing modules are configured to constitute the semiconductor substrate side of the light-receiving surface on plane angle
Portion covers domed shape, and radial centered on any when overlooking the domed shape from top on V-W plane angle
Configuration.
23. a kind of mammary gland X-ray shooting device or optical charting device are the supports using the configuration for determining photographing module
Body, by more than two photographing modules as claimed in claim 9 on the direction vertical with the semiconductor-based plate face three-dimensional group
Made of conjunction.
24. a kind of smooth CT device, mammary gland X-ray shooting device or optical charting device are that the diameter of circular shape is different
More than two photographing modules as claimed in claim 9, the direction for using continuous change vertical with the semiconductor-based plate face
On distance supporter, it is three-dimensional in the horizontal direction to be composed.
25. a kind of smooth CT device, mammary gland X-ray shooting device or optical charting device, described it uses stereo camera shooting module
Stereo camera shooting module has the following structure:
It combines photographing module described in more than two claims 11 in the direction solid vertical with semiconductor-based plate face, and
Matched on the latitude direction of domed shape in the diameter of circular shape mode successively different between adjacent photographing module
It sets, and the shape of side surface part described in claim 7 for concavity and is made to be formed as arc-shaped outside to take the photograph on plane angle
The structure as made of module radial configuration in the longitudinal of the domed shape.
26. a kind of smooth ultrasonograph diagnostic device is the right of convex on plane angle in the shape of the side surface part
It is required that on photographing module described in 2, it is further big with the side surface part of the convex on X-Y plane visual angle with ultrasonic wave exit facet
Cause consistent mode that ultrasound examination portion is installed.
27. a kind of smooth ultrasonic endoscope device, is equipped with ultrasound examination on photographing module according to any one of claims 8
Portion.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-089228 | 2016-04-27 | ||
| JP2016089228 | 2016-04-27 | ||
| JP2017-085234 | 2017-04-24 | ||
| JP2017085234A JP6201095B1 (en) | 2016-04-27 | 2017-04-24 | Imaging module and imaging apparatus |
| PCT/JP2017/016288 WO2017188219A1 (en) | 2016-04-27 | 2017-04-25 | Imaging module and imaging device |
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| CN109314120A true CN109314120A (en) | 2019-02-05 |
| CN109314120B CN109314120B (en) | 2020-08-04 |
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| CN201780024403.1A Active CN109314120B (en) | 2016-04-27 | 2017-04-25 | Image pickup module and image pickup apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP6201095B1 (en) |
| CN (1) | CN109314120B (en) |
| WO (1) | WO2017188219A1 (en) |
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| CN116387394A (en) * | 2023-06-05 | 2023-07-04 | 苏州焜原光电有限公司 | Photosensitive element annular distribution double-band superlattice detector chip assembly and preparation method thereof |
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| WO2019087971A1 (en) * | 2017-10-30 | 2019-05-09 | 富士フイルム株式会社 | Medical image processing device and endoscope device |
| JP7132076B2 (en) * | 2018-10-11 | 2022-09-06 | 株式会社半導体エネルギー研究所 | CT device |
| JP2021005655A (en) | 2019-06-26 | 2021-01-14 | キヤノン株式会社 | Photoelectric conversion device and apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6201095B1 (en) | 2017-09-20 |
| JP2017201687A (en) | 2017-11-09 |
| WO2017188219A1 (en) | 2017-11-02 |
| CN109314120B (en) | 2020-08-04 |
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