CN109305661A - A method of preparing rhombic system black phosphorus monocrystalline - Google Patents

A method of preparing rhombic system black phosphorus monocrystalline Download PDF

Info

Publication number
CN109305661A
CN109305661A CN201710644806.8A CN201710644806A CN109305661A CN 109305661 A CN109305661 A CN 109305661A CN 201710644806 A CN201710644806 A CN 201710644806A CN 109305661 A CN109305661 A CN 109305661A
Authority
CN
China
Prior art keywords
black phosphorus
iodine
preparation
phosphorus
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710644806.8A
Other languages
Chinese (zh)
Inventor
闾敏
王东亚
谢小吉
黄岭
黄维
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Tech University
Original Assignee
Nanjing Tech University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Tech University filed Critical Nanjing Tech University
Priority to CN201710644806.8A priority Critical patent/CN109305661A/en
Publication of CN109305661A publication Critical patent/CN109305661A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/02Preparation of phosphorus
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

The present invention relates to rhombic system black phosphorus method for preparing single crystal, specifically: ternary phosphor tin iodine catalyst and red phosphorus are mixed, it is placed in reactor, exclude by temperature programming and cooling to prepare black phosphorus after air is tamping, wherein ternary phosphor tin iodine catalyst can preparatory mass production, and it is good as the black phosphorus crystal property of catalyst acquisition using it, purity is high, yield is up to 99%, and catalyst can be reused, and provides great convenience for subsequent black phosphorus application development.

Description

A method of preparing rhombic system black phosphorus monocrystalline
Technical field
The invention belongs to optoelectronic semiconductor two-dimensional material fields, and in particular to a kind of side of preparation of rhombic system black phosphorus material Method.
Background technique
More stringent requirements are proposed for development of the rapid development of semiconductor electronic industry to material.Graphene has started two dimension The epoch of material, the carrier mobility (15000cm of superelevation2/ V*s) and other superior physicochemical properties make it It is considered as the most possible material for replacing silicon, however the characteristic that band gap is zero limits the development of graphene.With graphite alkenes Seemingly, black phosphorus is a kind of two-dimensional material of single element, there is Van der Waals force between layers, and difference can be obtained by way of removing The flat crystal of the number of plies.Black phosphorus not only possesses superhigh current carrying transport factor (200~50000cm of class graphene2/ V*s), and Its band gap can adjust (0.3eV~2.0eV) by the number of plies, compensate for the deficiency of graphene.In addition to this, black phosphorus material internal Electronics and photon show the anisotropy of height in lamella, therefore are suitble to the development of future electronic industry.
The research of black phosphorus at present is in the starting stage, and development is slower, is primarily due to currently without a kind of simple height The synthetic method of effect.1914, Bridgman heated white phosphorus to 200 DEG C, finds black phosphorus for the first time under the pressure of 1.2GPa In the presence of;Nineteen fifty-five, German chemist Krebs, H. under normal pressure, use mercury as catalyst, and using a small amount of black phosphorus as crystal seed, At a temperature of 370 DEG C, white phosphorus is converted to black phosphorus;1981, Tokyo University scientist Maruyama, Y. used the simple substance melted Bismuth dissolves white phosphorus, and then Slow cooling recrystallization synthesizes acicular black phosphorus.However, the severe toxicity and ignition quality of white phosphorus limit The application of these methods.2007, Nilges, Tom utilized Au, Sn and SnI4As combination catalyst, under vacuum conditions, add Hot red phosphorus obtains black phosphorus to 600 DEG C, but the introducing of noble metal improves production cost and the purity of black phosphorus decreases; CA105133009A, CA105460910 and CA105565289 also disclose the improvement to this method, but former to temperature control and red phosphorus That expects is more demanding, and there is catalyst choice certain limitation (to be only limitted to Au, Sn, I2Or its product that reacts to each other) and simultaneously It does not reuse;2010, Cheol-Min Park utilized high energy ball mill, synthesized the composite material of red phosphorus and black phosphorus, but High-energy ball milling method is difficult accurately to control the pressure and temperature of inside reactor, influences the controllability of preparation process.Therefore at present More commonly used synthetic method is high pressure (10kbar) method, but these methods have high requirement to laboratory apparatus.
Summary of the invention
The purpose of the present invention is to provide a kind of low in cost, convenient and safe rhombic system black phosphorus method for preparing single crystal.
To achieve the goals above, the present invention provides a kind of preparation method of rhombic system black phosphorus monocrystalline, wherein this method Include: to mix phosphorus raw material with phosphor tin iodine three-way catalyst, be placed in reactor, be tamping after excluding oxygen and pass through temperature programming Black phosphorus is prepared with cooling.
Compared with prior art, the present invention using reusable new catalyst, reaction temperature is optimized, is simplified Heating process shortens the reaction time.Other features and advantages of the present invention will give in detail in the following detailed description section It describes in detail bright.
Detailed description of the invention
Attached drawing is to further understand for providing to invention, and constitute part of specification, and following specific Embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the temperature lowering curve that heats up in black phosphorus preparation process;
Fig. 2 is the X-ray powder diffraction spectrum of catalyst in embodiment 2;
Fig. 3 is the digital photograph of catalyst in embodiment 2;
Fig. 4 is the digital photograph of black phosphorus crystal in embodiment 2;
Fig. 5 is the X-ray diffractogram tested after black phosphorus crystal grinding in embodiment 2
Fig. 6 is the X-ray diffractogram in embodiment 2 after black phosphorus crystal removing;
Fig. 7 is the Raman spectrogram of black phosphorus crystal in embodiment 2;
Specific embodiment
Detailed description of the preferred embodiments below.It should be understood that described herein specific Embodiment is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
The present invention provides a kind of preparation method of black phosphorus monocrystalline, wherein this method comprises: by phosphorus raw material, catalyst mixing, It is placed in reactor, oxygen rear enclosed will be excluded in reactor, and black phosphorus is prepared by temperature programming and temperature-fall period.Wherein it is catalyzed Agent is phosphor tin iodine three-way catalyst, includes Sn24P19.3I8;Discharge oxygen can be by vacuumizing or being discharged with inert gas empty The mode of gas is realized;In Temperature Programmed Processes, pass through time t from room temperature first1It is warming up to sublimation temperature T1, then through time t2Drop To crystallization initiation temperature T2, by time t3Reach crystallization final temperature T3.Wherein time t1、t2It does not limit, T1It is more than or equal to 450 DEG C, preferably T1More than or equal to 535 DEG C;Time t3It is relatively long, it is greater than 4 hours, T3More than or equal to 416 DEG C, it is preferable that T3 More than or equal to 450 DEG C;T3It is down to the process of room temperature not limited way, Temperature fall, air cooling-down, condensed water drop can be used The modes such as temperature are realized.
According to the present invention, the preparation of black phosphorus is divided into two processes, respectively catalyst preparation and black phosphorus preparation, this process It is to industrialize large scale preparation catalyst for convenience, reduces the process that material is launched, but is not excluded for merging two steps, it will The reactor of black phosphorus synthesis is added in catalyst raw material and red phosphorus, during temperature programming and cooling in-situ preparation catalyst from And synthesize black phosphorus.
According to the present invention, the phosphor tin iodine three-way catalyst be comprising phosphorus, tin, iodine atom mixture, tin atom and iodine Molar ratio >=2.5 of atom, preferably >=3, molar ratio >=2 of phosphorus atoms and iodine atom preferably >=2.4 are warming up to 450 DEG C More than, 500 DEG C or more are preferably risen to, kept for 10 hours or more, preferably kept for 72 hours or more, it is down to room temperature, is produced Object is used as catalyst after grinding uniformly.
Embodiment 1
Catalyst preparation:
By 12mmol Sn, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 40mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 91%, for bulk.
Embodiment 2
Catalyst preparation:
By 12mmol Sn, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 99%, for bulk.
Embodiment 3
Catalyst preparation:
By 1.5mmol Sn, 0.25mmol I2, 1.2mmol red phosphorus is added in hyaline-quartz pipe, then (interior to quartz ampoule Diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.450 DEG C are warming up to, is kept for 10 hours, is down to Room temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 30mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 99%, for bulk.
Embodiment 4
Catalyst preparation:
By 12mmol Sn, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.550 DEG C are warming up to, is kept for 96 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 99%, for bulk.
Embodiment 5
Catalyst preparation:
By 10mmol Sn, 2mmol I2, 8mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, Long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room temperature, It is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 88%, for bulk.
Embodiment 6
Catalyst preparation:
By 20mmolSn, 2mmol I2, 20mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, Long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room temperature, It is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 96%, for bulk.
Embodiment 7
Catalyst preparation:
By 12mmol Sn, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-450 DEG C of room temperature - 30min-450 DEG C -480min-416 DEG C-room temperature, obtained black phosphorus conversion ratio is 46%, for bulk.
Embodiment 8
Catalyst preparation:
By 12mmol Sn, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-535 DEG C of room temperature - 30min-535 DEG C -480min-450 DEG C-room temperature, obtained black phosphorus conversion ratio is 80%, for bulk.
Embodiment 9
Catalyst preparation:
By 8mmol Sn, 1mmol SnI4, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C -120min-200 DEG C-room temperature, obtained black phosphorus conversion ratio is 98%, for bulk.
Embodiment 10
Catalyst preparation:
By 10mmolSn, 2mmol SnI2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C -120min-200 DEG C-room temperature, obtained black phosphorus conversion ratio is 98%, for bulk.
Embodiment 11
Catalyst preparation:
By 3.2mmol Sn4P3, 2mmol I2, it is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room temperature, is ground with agate Alms bowl is uniformly stand-by by product grinding.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C -120min-200 DEG C-room temperature, obtained black phosphorus conversion ratio is 98%, for bulk.
Embodiment 12
Catalyst preparation:
By 9.6mmol Sn3P, 2mmol I2, it is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room temperature, is ground with agate Alms bowl is uniformly stand-by by product grinding.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C -120min-200 DEG C-room temperature, obtained black phosphorus conversion ratio is 90%, for bulk.
Embodiment 13
Catalyst preparation:
By 1.3mmol PI3, 12mmol Sn, 8.3mmol red phosphorus is added in hyaline-quartz pipe, then (interior to quartz ampoule Diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to Room temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C -120min-200 DEG C-room temperature, obtained black phosphorus conversion ratio is 95%, for bulk.
Embodiment 14
Catalyst preparation:
By 4mmol SnIP, 8mmol Sn, 4mmol red phosphorus is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C -120min-200 DEG C-room temperature, obtained black phosphorus conversion ratio is 80%, for bulk.
Embodiment 15
Catalyst preparation:
By 12mmol Pb, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 95%, for bulk.
Embodiment 16
Catalyst preparation:
By 12mmol Pb, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 25mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 95%, for bulk.
Embodiment 17
Catalyst preparation:
By 8mmol Pb, 4mmol Sn, 2mmol I2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz Pipe (internal diameter 1cm, long 10cm) is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, holding 72 is small When, it is down to room temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 25mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 96%, for bulk.
Embodiment 18
Catalyst preparation:
It will be by 10mmol Pb, 2mmol PbI2, 9.65mmol red phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, It is down to room temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 25mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 95%, for bulk.
Embodiment 19
Catalyst preparation:
By 12mmol Sn, 2mmol I2, 9.65mmol black phosphorus, be added hyaline-quartz pipe in, then to quartz ampoule (internal diameter 1cm, long 10cm) it is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.500 DEG C are warming up to, is kept for 72 hours, is down to room Temperature, it is with agate mortar that product grinding is uniformly stand-by.
Black phosphorus preparation:
Catalyst 20mg, red phosphorus 300mg are taken, is added in hyaline-quartz pipe, then to quartz ampoule (internal diameter 1cm, long 10cm) It is vacuumized, when vacuum degree reaches 1Pa encapsulation quartz ampoule.It is reacted according to following heating schedule: -60min-650 DEG C of room temperature - 60min-650 DEG C -480min-500 DEG C-room temperature, obtained black phosphorus conversion ratio is 99%, for bulk.
Embodiment 20
Product black phosphorus in embodiment 1 is taken out, remaining catalyst (20mg) is transferred to another quartz ampoule (internal diameter 1cm, long 10cm), 300mg red phosphorus is added, then quartz ampoule is vacuumized, encapsulates quartz ampoule when vacuum degree reaches 1Pa, It is reacted according to following heating schedule: -60min-650 DEG C -120min-650 DEG C -480min-500 DEG C-room temperature of room temperature, temperature-fall period In such a way that condensed water cools.
Obtaining black phosphorus conversion ratio is about 82%, for bulk.

Claims (10)

1. a kind of preparation method of rhombic system black phosphorus monocrystalline is placed in reactor this method comprises: catalyst and red phosphorus are mixed Middle exclusion oxygen is simultaneously tamping, and prepares black phosphorus by temperature programming and temperature-fall period;In Temperature Programmed Processes, first from room temperature To sublimation temperature (T1) guarantee that red phosphorus distils completely, then it is down to crystallization initiation temperature (T2), by crystallization time (t3), it is down to knot Brilliant final temperature (T3), it is cooled to room temperature harvest black phosphorus crystal, wherein T1>=450 DEG C, t3>=4 hours, T3≥416℃;This method It is characterized in that catalyst is phosphor tin iodine three-way catalyst, includes Sn24P19.3I8
2. the preparation method of rhombic system black phosphorus monocrystalline according to claim 1, wherein sublimation temperature (T1) it is preferably T1≥ 535 DEG C, crystallize final temperature (T3) it is preferably T3≥450℃。
3. the preparation method of rhombic system black phosphorus monocrystalline according to claim 1 or 2, wherein phosphor tin iodine three-way catalyst The preparation method comprises the following steps: containing only the mixture of three kinds of elements of phosphor tin iodine, wherein molar ratio >=2.5 of tin atom and iodine atom, phosphorus are former Molar ratio >=2 of son and iodine atom exclude air sealing, are warming up to maximum temperature >=450 DEG C, retention time >=10 hour, drop It include Sn in product to room temperature24P19.3I8
4. the preparation method of rhombic system black phosphorus monocrystalline according to claim 1 or 2, wherein phosphor tin iodine three-way catalyst Preparation method is preferred are as follows: the mixture of three kinds of elements of phosphor tin iodine is contained only, the molar ratio of tin atom and iodine atom in mixture >= 3, molar ratio >=2.4 of phosphorus atoms and iodine atom exclude air sealing, are warming up to maximum temperature >=500 DEG C, retention time >=10 hours, it is down to room temperature, temperature-fall period >=72 hour include Sn in product24P19.3I8
5. the preparation method of rhombic system black phosphorus monocrystalline according to claim 3 or 4, wherein containing only three kinds of members of phosphor tin iodine The mixture of element is preferably phosphorus simple substance, tin simple substance, elemental iodine.
6. the preparation method of rhombic system black phosphorus monocrystalline according to claim 3 or 4, wherein containing only three kinds of members of phosphor tin iodine The mixture of element is preferably phosphorus simple substance, tin simple substance, iodine tin compound.
7. the preparation method of rhombic system black phosphorus monocrystalline according to claim 3 or 4, wherein containing only three kinds of members of phosphor tin iodine The mixture of element is preferably phosphor tin compound, elemental iodine.
8. the preparation method of rhombic system black phosphorus monocrystalline according to claim 3 or 4, wherein containing only three kinds of members of phosphor tin iodine The mixture of element is preferably phosphorus simple substance, tin simple substance, phosphorus iodine compound.
9. the preparation method of rhombic system black phosphorus monocrystalline according to claim 3 or 4, wherein containing only three kinds of members of phosphor tin iodine The mixture of element is preferably SnIP and tin simple substance.
10. the preparation method of rhombic system black phosphorus monocrystalline described in any one of -9 according to claim 1, wherein tin atom can To be substituted completely or partially by lead atom.
CN201710644806.8A 2017-07-27 2017-07-27 A method of preparing rhombic system black phosphorus monocrystalline Pending CN109305661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710644806.8A CN109305661A (en) 2017-07-27 2017-07-27 A method of preparing rhombic system black phosphorus monocrystalline

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710644806.8A CN109305661A (en) 2017-07-27 2017-07-27 A method of preparing rhombic system black phosphorus monocrystalline

Publications (1)

Publication Number Publication Date
CN109305661A true CN109305661A (en) 2019-02-05

Family

ID=65205567

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710644806.8A Pending CN109305661A (en) 2017-07-27 2017-07-27 A method of preparing rhombic system black phosphorus monocrystalline

Country Status (1)

Country Link
CN (1) CN109305661A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110467165A (en) * 2019-08-29 2019-11-19 昆明理工大学 A method of high-purity black phosphorus is prepared using fixed-bed catalytic
CN110658178A (en) * 2019-09-29 2020-01-07 江苏拉曼医疗设备有限公司 Fluorescence background subtraction method for Raman spectrum
CN110963474A (en) * 2019-12-03 2020-04-07 昆明理工大学 Preparation method of black phosphorus-based nano material
CN111020697A (en) * 2019-12-06 2020-04-17 深圳市中科墨磷科技有限公司 Sn-doped tin4P3Method for efficiently preparing two-dimensional black phosphorus crystal for catalyst
CN111111712A (en) * 2019-12-19 2020-05-08 昆明理工大学 Multi-section temperature rise and fall preparation of black phosphorus catalyst AxByCzMethod (2)
CN112939065A (en) * 2021-03-12 2021-06-11 昆明理工大学 Preparation method of black phosphorus catalyst
CN113493929A (en) * 2020-03-18 2021-10-12 深圳市中科墨磷科技有限公司 Preparation method of black phosphorus single crystal wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106087050A (en) * 2016-05-30 2016-11-09 南京工业大学 A kind of method preparing rhombic system black phosphorus monocrystalline under low pressure
CN106498492A (en) * 2016-11-01 2017-03-15 南京工业大学 A kind of method for preparing rhombic system black phosphorus monocrystalline

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106087050A (en) * 2016-05-30 2016-11-09 南京工业大学 A kind of method preparing rhombic system black phosphorus monocrystalline under low pressure
CN106498492A (en) * 2016-11-01 2017-03-15 南京工业大学 A kind of method for preparing rhombic system black phosphorus monocrystalline

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DANIELA PFISTER等: "Inorganic Double Helices in Semiconducting SnIP", 《ADV. MATER》 *
LIPKOWSKI. J: "Chapter 10. Structure of Clathrates", 《ANNU. REP. PROG. CHEM., SECT. C: PHYS. CHEM》 *
MARIA A. KIRSANOVA等: "Clathrates and semiclathrates of Type-I: crystal structure and superstructures", 《Z. KRISTALLOGR.-CRYST. MATER.》 *
MING ZHAO等: "Growth Mechanism and Enhanced Yield of Black Phosphorus Microribbons", 《CRYSTAL GROWTH DESIGN》 *
NOVIKOV V. V.等: "Low-temperature structure and lattice dynamics of the thermoelectric clathrate Sn24P19.3I8", 《J. ALLOYS COMPD》 *
SHATRUK M. M等: "First tin pnictide halides Sn24P19.3I8 and Sn24As19.3I8: synthesis and the clathrate-I type of the crystal structure", 《INORG. CHEM.》 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110467165A (en) * 2019-08-29 2019-11-19 昆明理工大学 A method of high-purity black phosphorus is prepared using fixed-bed catalytic
CN110467165B (en) * 2019-08-29 2023-03-10 昆明理工大学 Method for preparing high-purity black phosphorus by adopting fixed bed catalysis
CN110658178A (en) * 2019-09-29 2020-01-07 江苏拉曼医疗设备有限公司 Fluorescence background subtraction method for Raman spectrum
CN110963474A (en) * 2019-12-03 2020-04-07 昆明理工大学 Preparation method of black phosphorus-based nano material
CN111020697A (en) * 2019-12-06 2020-04-17 深圳市中科墨磷科技有限公司 Sn-doped tin4P3Method for efficiently preparing two-dimensional black phosphorus crystal for catalyst
CN111111712A (en) * 2019-12-19 2020-05-08 昆明理工大学 Multi-section temperature rise and fall preparation of black phosphorus catalyst AxByCzMethod (2)
CN113493929A (en) * 2020-03-18 2021-10-12 深圳市中科墨磷科技有限公司 Preparation method of black phosphorus single crystal wafer
CN112939065A (en) * 2021-03-12 2021-06-11 昆明理工大学 Preparation method of black phosphorus catalyst

Similar Documents

Publication Publication Date Title
CN109305661A (en) A method of preparing rhombic system black phosphorus monocrystalline
US9487405B2 (en) Method for manufacturing SiC powders with high purity
CN106087050A (en) A kind of method preparing rhombic system black phosphorus monocrystalline under low pressure
CN109502589A (en) A method of preparing high-purity silicon carbide powder
CN110205674B (en) Method for preparing two-dimensional black phosphorus crystal by taking white phosphorus as raw material
CN110938867B (en) Method for efficiently preparing two-dimensional black phosphorus crystal
CN106498492A (en) A kind of method for preparing rhombic system black phosphorus monocrystalline
CN102958834A (en) Silicon carbide powder and method for producing silicon carbide powder
CN114195656B (en) Large-area high-transmittance metal halide scintillating ceramic and preparation method thereof
CN113023764B (en) Preparation method of copper-based perovskite nanocrystalline film
CN111254494A (en) Preparation method for realizing cheap black phosphorus single crystal by using low-purity red phosphorus
CN103950909A (en) Preparation method of zinc phosphide
CN102168305B (en) Synthesis method of phosphorus-silicon-cadmium polycrystal material
Yang et al. A new mixed-ligand copper pentaborate with square-like, rectangle-like and ellipse-like channels formed via hydrogen bonds
CN108550641B (en) Preparation method of lead iodide and perovskite solar cell using lead iodide as raw material
CN103949655B (en) A kind of raw material of stoichiometric proportion and sol-gal process prepare the method for bismuth silicate powder
CN115874283A (en) Synthesis device and synthesis method of high-purity silicon carbide synthetic powder for crystal growth
Wang et al. Synthesis process dependent photoluminescent properties of Zn2SiO4: Mn2+ upon VUV region
CN113788480A (en) Preparation method of high-purity silicon carbide and corresponding high-purity silicon carbide
CN102268734A (en) LPS:Ce luminescent material and preparation method thereof
CN109437327B (en) Preparation of pure phase Sr97Nd3Co200As200Method for preparing compounds
JPS61222911A (en) Synthesis of phosphorated compound
CN112194105B (en) Preparation method of cadmium telluride
CN110817955B (en) Preparation of pure phase NdPd2As2And compounds prepared thereby
CN112064106B (en) Method for preparing strontium dipotassium cyclic phosphate crystal and application

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190205

WD01 Invention patent application deemed withdrawn after publication