CN109302559A - Realize phase focusing method of the cmos image sensor under pixel synthesis mode - Google Patents
Realize phase focusing method of the cmos image sensor under pixel synthesis mode Download PDFInfo
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- CN109302559A CN109302559A CN201710606819.6A CN201710606819A CN109302559A CN 109302559 A CN109302559 A CN 109302559A CN 201710606819 A CN201710606819 A CN 201710606819A CN 109302559 A CN109302559 A CN 109302559A
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- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 33
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- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
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- 230000000295 complement effect Effects 0.000 claims description 12
- 230000003252 repetitive effect Effects 0.000 claims description 6
- 210000004276 hyalin Anatomy 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
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- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 description 13
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- 238000003384 imaging method Methods 0.000 description 4
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- 238000009792 diffusion process Methods 0.000 description 2
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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Abstract
The present invention proposes a kind of phase focusing method for realizing cmos image sensor under pixel synthesis mode, provides four dot structures with same color filter coating；4 adjacent four dot structures are a chunking；Several chunkings form image sensor pixel array；Partial occlusion is carried out at least two pixel units in four dot structure corresponding in several chunkings, the occlusion area position consistency of pixel unit in same four dot structure；Under pixel synthesis mode, partial occlusion based at least two pixel units in several four dot structures, it obtains signal message and extracts corresponding phase information, focusing state is compared with the phase information, realize the rapid focus under the pixel synthesis mode of four dot structures.The phase focusing method of realization cmos image sensor of the invention under pixel synthesis mode not only can guarantee compared with high sensitivity, but also energy rapid focus, to meet the application demand of taking pictures of more intelligent and portable equipment.
Description
Technical field
Realize cmos image sensor in the phase focusing side that pixel synthesizes under (binning) mode the present invention relates to a kind of
Method.
Background technique
With the increasing popularization of smart mobile phone, people also proposed increasingly the image taking effect of mobile intelligent terminal
High requirement can be realized rapid focus in some dynamic scenes, and clearly some written in water shadows under candid photograph
Picture becomes more and more Man's Demands.Meanwhile changeable scene is coped with, for high dynamic range, the requirement of high sensitivity is also more next
It is higher.
Focusing technology more advanced at present is phase-detection auto-focusing (PDAF) technology, be may be implemented more quickly
Focusing.PDAF is realized at present, is mainly blocked using the metal structure progress in optical path is additional, to extract the information of phase,
The dot structure more blocked can carry phase information in the signal message being collected into, and phase information is extracted by algorithm,
With the variation of object and the position of focal plane, phase information can also generate variation, and designed structure is extracted
Defocus can fit a curve to the phase information of focus, when actual scene goes to the position of detection defocus object,
The mobile position that how much can reach focus cracking can be calculated, and then realizes rapid focus.
As shown in Figure 1, common PDAF hides more in the cmos image sensor using tradition RGB Bayer array structure
Structure being kept off usually in the pixel of same row, such as in blue (B) pixel of same row, in the dot structure blocked two more
Between can be spaced a B pixel, certainly, this structure is also not limited to this, but be all one-to-many barrier structure form occur, one
To in more barrier structures comprising a left side is blocked and a right side is blocked structure, while the pixel color of this one-to-many barrier structure
It can be replaced by green (G) or white (W), to increase transmitance.
But the imaging sensor of current some high pixels, traditional RGB Bayer array structure is not used, but is used
Four pixels (4cell) structure, as shown in Fig. 2, be specifically with the pixel unit of 2 × 2 same colors for one or four dot structures, phase
4 adjacent four dot structures do the arrangement of RGB again, constitute a chunking；Several chunkings form image sensor pixel array；
The pixel synthesis of signal rank may be implemented in this structure, to realize higher sensitivity under pixel synthesis mode.
But it if continuing to use existing PDAF barrier structure on the imaging sensor of four dot structures, just has no idea
Phase information is extracted, so the imaging sensor of current this four dot structure, under pixel synthesis mode, being can not
Realize PDAF function, application demand that this scene being increasingly commonly encountered for some people is taken pictures, such as whenever and wherever possible before
The application demands such as self-timer are taken the photograph, user's needs are unable to satisfy.
Summary of the invention
The purpose of the present invention is to provide a kind of phase focusings for realizing cmos image sensor under pixel synthesis mode
Method not only can guarantee compared with high sensitivity, but also energy rapid focus, and meet the application demand of taking pictures of more intelligent and portable equipment.
Based on considerations above, the present invention proposes a kind of phase pair for realizing cmos image sensor under pixel synthesis mode
Burnt method provides four dot structures with same color filter coating；4 adjacent four dot structures are a chunking；Institute
State several chunking composition image sensor pixel arrays；To at least two pixels in four dot structure corresponding in several chunkings
Unit carries out partial occlusion, the occlusion area position consistency of pixel unit in same four dot structure；Under pixel synthesis mode,
Based on the partial occlusion of at least two pixel units in several four dot structures, obtains signal message and extract corresponding
Focusing state is compared phase information with the phase information, realizes fast under the pixel synthesis mode of four dot structures
Speed focusing.
Preferably, part screening is carried out to all four pixel units in four dot structure corresponding in several chunkings
Gear.
Preferably, in several chunkings, the screening of at least two pixel units of four dot structures in several first chunkings
It keeps off region and the occlusion area of at least two pixel units of four dot structures in several second chunkings is partially or completely complementary.
Preferably, the ratio of the occlusion area of at least two pixel unit accounts for the 30% to 70% of pixel cell area.
Preferably, the color filter film of four dot structures blocked is green filter film, hyaline membrane.
Preferably, partially or completely complementary four dot structure is respectively a pair to occlusion area；For the pair of
The lateral distance of inside, one or four dot structure occlusion areas and another four dot structures occlusion area is less than or equal to 4 pixel lists
First distance, fore-and-aft distance are less than or equal to 16 pixel unit distances.
Preferably, partially or completely complementary four dot structure is respectively a pair to occlusion area；It is the pair of with it is another
Lateral distance between a pair is less than or equal to 64 pixel unit distances, and fore-and-aft distance is less than or equal to 64 pixel unit distances.
Preferably, partially or completely complementary four dot structure is respectively a pair to occlusion area；Described at least one
Repetitive unit is formed to four dot structures, several repetitive units are laid in the pixel array.
The phase focusing method of realization cmos image sensor of the invention under pixel synthesis mode, by existing four pixel
Structure and PDAF focus fastly to be combined, and the PDAF phase rapid focus function under pixel synthesis mode may be implemented, compensate for
The loss of traditional PDAF structure phase information in the application of four dot structures, also compensates for PDAF and focuses under low light environment standard
The defect of true property decline, while changing by the difference of the more barrier structures of four pixels, it can also realize that phase information is more accurate
Extraction can also be designed by the variation of barrier structure in the unobvious bright scene secretly compared, realize phase information
Amplification and extraction, so that the application range of PDAF greatly be expanded, may be implemented in more scenes applications more quickly and accurately
Focusing, meets the application demand of taking pictures of more intelligent and portable equipment.
Detailed description of the invention
By Figure of description and then it is used to illustrate the specific reality of the certain principles of the present invention together with Figure of description
Mode is applied, other feature possessed by the present invention and advantage will be apparent or more specifically illustrated.
Fig. 1 is the barrier structure schematic diagram of the existing cmos image sensor using Bayer array；
Fig. 2 is four dot structure schematic diagrames of existing cmos image sensor；
Fig. 3 is the barrier structure schematic diagram according to the cmos image sensor of one embodiment of the invention；
Fig. 4 is the barrier structure schematic diagram according to the cmos image sensor of another embodiment of the present invention；
Fig. 5 is the barrier structure schematic diagram according to the cmos image sensor of further embodiment of this invention.
Specific embodiment
To solve above-mentioned the problems of the prior art, the present invention provides a kind of realizations cmos image sensor in pixel synthesis
Phase focusing method under mode not only can guarantee compared with high sensitivity, but also energy rapid focus, set to meet more intelligent and portables
Standby application demand of taking pictures.
In the following detailed description of the preferred embodiment, reference is constituted to the appended attached drawing of present invention a part.Institute
Attached attached drawing, which has been illustrated by way of example, can be realized specific embodiment.Exemplary embodiment is not intended to
Exhaustive all embodiments according to the present invention.It is appreciated that without departing from the scope of the present invention, can use other
Embodiment can also carry out the modification of structure or logic.Therefore, it is below specific descriptions and it is unrestricted, and this
The range of invention is defined by the claims appended hereto.
Fig. 3 is the barrier structure schematic diagram according to the cmos image sensor of one embodiment of the invention.According to Fig. 3, originally
Invention proposes a kind of phase focusing method for realizing cmos image sensor under pixel synthesis mode, provides with same color
Four dot structures of filter coating；4 adjacent four dot structures are a chunking；Several chunkings form imaging sensor
Pixel array；To in four dot structure corresponding in several chunkings at least two pixel units carry out partial occlusion, same four
The occlusion area position consistency of pixel unit in dot structure；Pixel synthesis mode under pixel synthesis mode, in the present invention
Refer to: the electronics of four pixel units in four dot structures imports the same floating diffusion region (Floating
), Diffusion it and by same set of reading circuit reads.Based at least two pixel lists in several four dot structures
The partial occlusion of member obtains signal message and extracts corresponding phase information, focusing state and the phase information are compared
It is right, realize the rapid focus under the pixel synthesis mode of four dot structures.
Heretofore described phase information corresponding change with the change in location of object and focal plane extracts defocus to conjunction
Burnt phase information is fitted to a curve, and actual scene is compared with the curve, is moved to focus quickly to calculate
The distance of position improves focusing accuracy and speed, realizes rapid focus.
At least two pixel units in four dot structures of same color filter coating are blocked, can extract four pixel regions
At least two groups phase information in domain is realized the information amplification of low contrast scene and is extracted.
Under pixel synthesis mode, at least two pixel units in four dot structures with same color filter coating into
Row blocks, and photosensitive intensity is good, and signal strength is high, other normal four dot structures to side, caused by crosstalk signal accounting compared with
It is small, it can be achieved that the phase of dark scene is focused.
In one embodiment, to all four pixel units carry out portions in four dot structure corresponding in several chunkings
Divide and blocks.
In one embodiment, in several chunkings, at least two pixel lists of four dot structures in several first chunkings
Member occlusion area and several second chunkings in four dot structures at least two pixel units occlusion area partially or completely
It is complementary.
In one embodiment, the ratio of the occlusion area of at least two pixel unit accounts for the 30% of pixel cell area
To 70%.In the embodiment shown in fig. 3, the occlusion area of pixel unit accounts for pixel cell area in same four dot structure
Ratio is identical；In the embodiment shown in fig. 4, the occlusion area of pixel unit accounts for pixel cell area in same four dot structure
Difference.
In one embodiment, the color filter film of four dot structures blocked is green filter film, hyaline membrane.
In one embodiment, partially or completely complementary four dot structure is respectively a pair to occlusion area；For institute
It states inside a pair, the lateral distance of one or four dot structure occlusion areas and another four dot structures occlusion area is less than or equal to 4
Pixel unit distance, fore-and-aft distance are less than or equal to 16 pixel unit distances.
In one embodiment, partially or completely complementary four dot structure is respectively a pair to occlusion area；Described one
64 pixel unit distances are less than or equal to the lateral distance between another pair, fore-and-aft distance is less than or equal to 64 pixel units
Distance.
In one embodiment, partially or completely complementary four dot structure is respectively a pair to occlusion area；Described
At least a pair of four dot structures form repetitive unit, and several repetitive units are laid in the pixel array.
In the embodiment shown in fig. 3, the arrangement mode of the pair of four dot structure is located at same row, art technology
Personnel are appreciated that in unshowned other embodiments, the pair of four dot structure can also be located at same a line, Huo Zheru
In embodiment shown in fig. 5, the pair of four dot structures different lines are not gone together, but certain repetition rule are presented in overall arrangement
Rule.
The phase focusing method of realization cmos image sensor of the invention under pixel synthesis mode, by existing four pixel
Structure and PDAF focus fastly to be combined, and the PDAF phase rapid focus function under pixel synthesis mode may be implemented, compensate for
The loss of traditional PDAF structure phase information in the application of four dot structures, also compensates for PDAF and focuses under low light environment standard
The defect of true property decline, while changing by the difference of the more barrier structures of four pixels, it can also realize that phase information is more accurate
Extraction can also be designed by the variation of barrier structure in the unobvious bright scene secretly compared, realize phase information
Amplification and extraction, so that the application range of PDAF greatly be expanded, may be implemented in more scenes applications more quickly and accurately
Focusing, meets the application demand of taking pictures of more intelligent and portable equipment.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
How from the point of view of, the present embodiments are to be considered as illustrative and not restrictive.In addition, it will be evident that one word of " comprising " not
Exclude other elements and steps, and wording "one" be not excluded for plural number.The multiple element stated in device claim can also
To be implemented by one element.The first, the second equal words are used to indicate names, and are not indicated any particular order.
Claims (8)
1. a kind of phase focusing method for realizing cmos image sensor under pixel synthesis mode, it is characterised in that:
Four dot structures for having same color filter coating are provided；4 adjacent four dot structures are a chunking；If described
Dry chunking forms image sensor pixel array；
Partial occlusion, same four pixels knot are carried out at least two pixel units in four dot structure corresponding in several chunkings
The occlusion area position consistency of pixel unit in structure；
Under pixel synthesis mode, based on the partial occlusion of at least two pixel units in several four dot structures, obtain
It takes signal message and extracts corresponding phase information, focusing state is compared with the phase information, realize four pixel knots
Rapid focus under the pixel synthesis mode of structure.
2. the phase focusing method according to claim 1 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, partial occlusion is carried out to all four pixel units in four dot structure corresponding in several chunkings.
3. the phase focusing method according to claim 1 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, in several chunkings, the occlusion area of at least two pixel units of four dot structures in several first chunkings
It is partially or completely complementary with the occlusion area of at least two pixel units of four dot structures in several second chunkings.
4. the phase focusing method according to claim 1 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, the ratio of the occlusion area of at least two pixel unit accounts for the 30% to 70% of pixel cell area.
5. the phase focusing method according to claim 1 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, the color filter film of four dot structures blocked is green filter film, hyaline membrane.
6. the phase focusing method according to claim 3 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, partially or completely complementary four dot structure is respectively a pair to occlusion area；For the pair of inside, one
The lateral distance of four dot structure occlusion areas and another four dot structures occlusion area is less than or equal to 4 pixel unit distances,
Fore-and-aft distance is less than or equal to 16 pixel unit distances.
7. the phase focusing method according to claim 3 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, partially or completely complementary four dot structure is respectively a pair to occlusion area；It is the pair of with another pair it
Between lateral distance be less than or equal to 64 pixel unit distances, fore-and-aft distance be less than or equal to 64 pixel unit distances.
8. the phase focusing method according to claim 3 for realizing cmos image sensor under pixel synthesis mode,
It is characterized in that, partially or completely complementary four dot structure is respectively a pair to occlusion area；At least a pair of four pictures
Plain structure composition repetitive unit lays several repetitive units in the pixel array.
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| CN112911115A (en) * | 2021-01-28 | 2021-06-04 | 深圳市汇顶科技股份有限公司 | Pixel array, image sensing device, image sensor and related control method |
| WO2021163824A1 (en) * | 2020-02-17 | 2021-08-26 | 深圳市汇顶科技股份有限公司 | Image signal processing method, related image sensing system, and electronic device |
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