CN109302050A - A kind of MOS drive circuit applied to battery management - Google Patents
A kind of MOS drive circuit applied to battery management Download PDFInfo
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- CN109302050A CN109302050A CN201811505273.6A CN201811505273A CN109302050A CN 109302050 A CN109302050 A CN 109302050A CN 201811505273 A CN201811505273 A CN 201811505273A CN 109302050 A CN109302050 A CN 109302050A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims description 30
- 230000005611 electricity Effects 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0063—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with circuits adapted for supplying loads from the battery
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H02J2007/0067—
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- Engineering & Computer Science (AREA)
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Abstract
The present invention discloses a kind of MOS drive circuit applied to battery management, the MOS drive circuit includes PWM signal generator, voltage lifting circuit, switching signal circuit, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor and first voltage comparator, is connected with rectification circuit between voltage lifting circuit and first voltage comparator.The metal-oxide-semiconductor that driving circuit of the invention can be used the driving signal of lower voltage class to drive driving voltage more demanding, it is at low cost without using isolating device or the driving chip of profession, be conducive to popularize.
Description
[technical field]
The present invention relates to driving circuit technical fields, specifically, being related to a kind of MOS driving electricity applied to battery management
Road.
[background technique]
With industry it is increasingly developed, battery management the fields such as battery producer aging and electric car fast development.Its
In, battery management is mainly surveyed by the multiple check of cell voltage, electric current and the Uniform Discharge circuit of battery forms.For more piece electricity
The Uniform Discharge circuit in pond, most of on the market is all using MOSFET as switch tube discharge, the driving voltage one of MOSFET
As be much higher than single-chip microcontroller control voltage, so generalling use MOSFET special driving chip.
However, the drive for the MOSFET that current battery management system is mainly used for the pressure discharge circuit of multisection lithium battery
Dynamic is mostly special driving chip on the market, and this driving chip is relatively high in cost, is unfavorable for popularity application.
[summary of the invention]
For overcome the deficiencies in the prior art, the main object of the present invention is to provide a kind of MOS applied to battery management
Driving circuit, the driving circuit can use lower voltage class without using the driving chip of isolating device or profession
Driving signal is come the metal-oxide-semiconductor that drives driving voltage more demanding.
In order to realize above-mentioned main purpose, a kind of MOS drive circuit packet applied to battery management provided by the invention
Include PWM signal generator, voltage lifting circuit, switching signal circuit, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor and
One voltage comparator, is connected with rectification circuit between voltage lifting circuit and first voltage comparator, voltage lifting circuit it is defeated
Enter the first pwm signal that end receives PWM signal generator output, the input terminal of switching signal circuit receives PWM signal generator
Second pwm signal of output, the output end of switching signal circuit are sent out to the grid of the grid of the second metal-oxide-semiconductor, third metal-oxide-semiconductor respectively
Driving signal is sent to control the on or off of the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the drain electrode of the second metal-oxide-semiconductor is compared with first voltage
The inverting input terminal of device is electrically connected, and the drain electrode of third metal-oxide-semiconductor is electrically connected with the non-inverting input terminal of first voltage comparator, the first electricity
The output end of pressure comparator is electrically connected with the grid of the first metal-oxide-semiconductor, and the source electrode of the first metal-oxide-semiconductor meets the negative terminal of battery, the first MOS
The drain electrode of pipe connects the anode of battery.
Further embodiment is that rectification circuit includes rectifier bridge and third capacitor, and third capacitor is connected in parallel on rectifier bridge
Between third end and the 4th end.
Further scheme is that voltage lifting circuit includes second voltage comparator, tertiary voltage comparator, the second electricity
The inverting input terminal of comparator, the non-inverting input terminal of tertiary voltage comparator is pressed to receive the first pwm signal, second voltage comparator
Non-inverting input terminal be connected to the inverting input terminal of tertiary voltage comparator.
Further scheme is, the non-inverting input terminal of second voltage comparator be also connected with second resistance, the second capacitor,
First diode, the first termination power voltage terminal of second resistance, the first end of the second capacitor are connected to the second of second resistance
Between end and the cathode of first diode, the anode of the second capacitance connection to first diode.
Further scheme is to be connected with first between the output end of second voltage comparator and the first end of rectifier bridge
Resistance, the first TVS pipe, first capacitor, the first termination power voltage terminal of first resistor, the first end of the first TVS pipe are connected to
Between the second end of first resistor and the first end of first capacitor.
Further scheme is to be connected with the 8th between the output end of second voltage comparator and the second end of rectifier bridge
Resistance, the second TVS pipe, the 4th capacitor, the first termination power voltage terminal of the 8th resistance, the first end connection of the second TVS pipe
Between the second end of the 8th resistance and the first end of the 4th capacitor.
Further scheme is that switching signal circuit includes the 4th voltage comparator, the 5th voltage comparator, the 4th electricity
The inverting input terminal of comparator, the non-inverting input terminal of the 5th voltage comparator is pressed to receive the second pwm signal, the 4th voltage comparator
Non-inverting input terminal be connected to the inverting input terminal of the 5th voltage comparator, the output end of the 4th voltage comparator is connected to second
The output end of the grid of metal-oxide-semiconductor, the 5th voltage comparator is connected to the grid of third metal-oxide-semiconductor.
Further scheme is also connected between the output end of the 4th voltage comparator and the grid of the second metal-oxide-semiconductor
14th resistance, the 15th resistance, the 16th resistance and third diode, the first termination supply voltage of the 14th resistance
End, the second end of the 14th resistance are connected to the first end of the 15th resistance, and the cathode of third diode is connected to the 15th electricity
Between the second end of resistance and the first end of the 16th resistance, the second end of the 16th resistance is connected to the anode of third diode.
Further scheme is also connected between the output end of the 5th voltage comparator and the grid of third metal-oxide-semiconductor
17th resistance, the 18th resistance, the 19th resistance and the 4th diode, the first termination supply voltage of the 17th resistance
End, the second end of the 17th resistance are connected to the first end of the 18th resistance, and the cathode of the 4th diode is connected to the 18th electricity
Between the second end of resistance and the first end of the 19th resistance, the second end of the 19th resistance is connected to the anode of the 4th diode.
It can be seen that MOS drive circuit provided by the invention is mainly by voltage lifting circuit, rectification circuit, switching signal
The composition such as circuit and driving circuit, voltage lifting circuit and rectification circuit constitute a boostrap circuit, which is mainly used for
The DC voltage of certain value is raised on the basis of input voltage；Switching signal circuit is mainly used for believing the 2nd PWM of low pressure
It number is transformed between input voltage and above-mentioned DC voltage, for driving the metal-oxide-semiconductor of high voltage position；Metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3
Two comparison signals that can control first voltage comparator by the driving signal of switching signal circuit, to compare generation one
The driving signal of a metal-oxide-semiconductor.Wherein, the effect of the first pwm signal is the oscillation source for being lifted voltage；Second pwm signal is metal-oxide-semiconductor
The driving signal of driving can produce two-way driving signal to control the switch of metal-oxide-semiconductor.
So the driving signal of lower voltage class can be used to drive driving voltage more demanding in the driving circuit
Metal-oxide-semiconductor, it is at low cost, can be widely used in metal-oxide-semiconductor and drive this neck without using isolating device or the driving chip of profession
Domain.
[Detailed description of the invention]
Fig. 1 is a kind of schematic diagram of the MOS drive circuit embodiment applied to battery management of the present invention.
Fig. 2 is voltage lifting circuit and rectification in a kind of MOS drive circuit embodiment applied to battery management of the present invention
The circuit diagram that circuit, driving circuit connect jointly.
Fig. 3 is the circuit of switching signal circuit in a kind of MOS drive circuit embodiment applied to battery management of the present invention
Schematic diagram.
[specific embodiment]
In order to which the objects, technical solutions and advantages of invention are more clearly understood, with reference to the accompanying drawings and embodiments, to this
Invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, not
It limits the use of in the present invention.
Referring to Fig. 1 and Fig. 2, a kind of MOS drive circuit applied to battery management of the invention includes PWM signal generator
10, voltage lifting circuit 20, switching signal circuit 30, driving circuit 40, wherein driving circuit 40 includes metal-oxide-semiconductor Q1, metal-oxide-semiconductor
Q2, metal-oxide-semiconductor Q3 and first voltage comparator U2A, are connected with whole between voltage lifting circuit 20 and first voltage comparator U2A
Current circuit 21, the input terminal of voltage lifting circuit 20 receive the first pwm signal that PWM signal generator 10 exports, switching signal
The input terminal of circuit 30 receives the second pwm signal that PWM signal generator 10 exports, the output end difference of switching signal circuit 30
Send driving signal to the grid of the grid of metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 to control the on or off of metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3,
The drain electrode of metal-oxide-semiconductor Q2 is electrically connected with the inverting input terminal of first voltage comparator U2A, the drain electrode of metal-oxide-semiconductor Q3 and first voltage ratio
Non-inverting input terminal electrical connection compared with device U2A, the output end of first voltage comparator U2A are electrically connected with the grid of metal-oxide-semiconductor Q1, MOS
The source electrode of pipe Q1 connects the negative terminal of battery 1, and the drain electrode of metal-oxide-semiconductor Q1 connects the anode of battery 1.In the present embodiment, pwm signal occurs
Device 10 can be the circuit chip for directly passing through chip interior module output pwm signal, which can be STM32 series
Chip, DSP2812 or DSP28335 processor.
Wherein, rectification circuit 21 include rectifier bridge U3 and capacitor C3, capacitor C3 be connected in parallel on rectifier bridge U3 third end and
Between 4th end.
In the present embodiment, voltage lifting circuit 20 includes second voltage comparator U1A, tertiary voltage comparator U1B, the
The inverting input terminal of two voltage comparator U1A, the non-inverting input terminal of tertiary voltage comparator U1B the first pwm signal of reception, second
The non-inverting input terminal of voltage comparator U1A is connected to the inverting input terminal of tertiary voltage comparator U1B.
Wherein, the non-inverting input terminal of second voltage comparator U1A is also connected with resistance R2, capacitor C2, diode D1, resistance
R2 first termination power voltage terminal, the first end of capacitor C2 be connected to resistance R2 second end and diode D1 cathode it
Between, capacitor C2 is connected to the anode of diode D1.
Wherein, resistance R1, TVS are connected between the output end of second voltage comparator U1A and the first end of rectifier bridge U3
Pipe D7, capacitor C1, resistance R1 first termination power voltage terminal, the first end of TVS pipe D7 be connected to resistance R1 second end and
Between the first end of capacitor C1, the second end of TVS pipe D7 is grounded, and the first end of capacitor C1 is connected to the first end of rectifier bridge U3；
Resistance R8, TVS pipe D8, capacitor C4 are connected between the output end of second voltage comparator U1A and the second end of rectifier bridge U3, electricity
The first termination power voltage terminal of R8 is hindered, the first end of TVS pipe D8 is connected to the second end of resistance R8 and the first end of capacitor C4
Between, the second end of TVS pipe D8 is grounded, and the second end of capacitor C4 is connected to the second end of rectifier bridge U3.Specifically, capacitor C1 and
Capacitor C2 is voltage increase capacitor, and TVS pipe D7 and TVS pipe D8 limit the voltage of comparator output terminal, can prevent comparator
Damage.
In the present embodiment, driving circuit 40 further includes resistance R4, resistance R9, resistance R12, resistance R5, resistance R10, electricity
Hinder R13, resistance R6, resistance R11, resistance R7 and diode D2.
Referring to Fig. 3, switching signal circuit 30 includes the 4th voltage comparator U4A, the 5th voltage comparator U2B, the 4th electricity
The inverting input terminal of comparator U4A, the non-inverting input terminal of the 5th voltage comparator U2B is pressed to receive the second pwm signal, the 4th voltage
The non-inverting input terminal of comparator U4A is connected to the inverting input terminal of the 5th voltage comparator U2B, the 4th voltage comparator U4A's
Output end is connected to the grid of metal-oxide-semiconductor Q2, and the output end of the 5th voltage comparator U2B is connected to the grid of metal-oxide-semiconductor Q3.
Wherein, resistance R14, resistance are also connected between the output end of the 4th voltage comparator U4A and the grid of metal-oxide-semiconductor Q2
R15, resistance R16 and diode D3, the first termination power voltage terminal of resistance R14, the second end of resistance R14 are connected to resistance
The first end of R15, the cathode of diode D3 are connected between the second end of resistance R15 and the first end of resistance R16, resistance R16
Second end be connected to the anode of diode D3；Also connect between the output end of 5th voltage comparator U2B and the grid of metal-oxide-semiconductor Q3
It is connected to resistance R17, resistance R18, resistance R19 and diode D4, the first of resistance R17 terminates power voltage terminal, resistance R17's
Second end is connected to the first end of resistance R18, the cathode of diode D4 be connected to resistance R18 second end and resistance R19
Between one end, the second end of resistance R19 is connected to the anode of diode D4.Specifically, switching signal circuit 30 refers to second
Pwm signal can thus generate two-way driving signal compared with fixed voltage as the switching signal that amplitude is 5V, i.e., when the
The end drive1 is high level when two pwm signals are high level, and the end drive2 is low level, when the second pwm signal is low level
The end drive1 is low level, and the end drive2 is high level.
It can be seen that MOS drive circuit provided by the invention is mainly by voltage lifting circuit 20, rectification circuit 21, switch
The composition such as signal circuit 30 and driving circuit 40, voltage lifting circuit 20 and rectification circuit 21 constitute a boostrap circuit, the electricity
Road is mainly used for being raised to the DC voltage of certain value on the basis of input voltage；Switching signal circuit 30 is mainly used for will be low
Second pwm signal of pressure is transformed between input voltage and above-mentioned DC voltage, for driving the metal-oxide-semiconductor of high voltage position；MOS
Pipe Q2 and metal-oxide-semiconductor Q3 can control two comparisons of first voltage comparator U2A by the driving signal of switching signal circuit 30
Signal, to compare the driving signal for generating a metal-oxide-semiconductor Q1.
Wherein, the frequency of the first pwm signal is 100Khz or more, and it acts as the oscillation sources of lifting voltage；2nd PWM letter
Number for metal-oxide-semiconductor driving driving signal, can produce two-way driving signal to control the switch of metal-oxide-semiconductor.
So the driving signal of lower voltage class can be used to drive driving voltage requirement in the MOS drive circuit
Higher metal-oxide-semiconductor, it is at low cost, can be widely used in metal-oxide-semiconductor and drive this without using isolating device or the driving chip of profession
One field.
It should be noted that the above is only a preferred embodiment of the present invention, but the design concept invented is not limited thereto,
All insubstantial modifications made using this design to the present invention, are also fallen within the scope of protection of the present invention.
Claims (9)
1. a kind of MOS drive circuit applied to battery management characterized by comprising
PWM signal generator, voltage lifting circuit, switching signal circuit, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor and
First voltage comparator is connected with rectification circuit, the electricity between the voltage lifting circuit and the first voltage comparator
The input terminal that pressure promotes circuit receives the first pwm signal of PWM signal generator output, the switching signal circuit it is defeated
Enter the second pwm signal that end receives the PWM signal generator output, the output end of the switching signal circuit is respectively to described
The grid of second metal-oxide-semiconductor, the third metal-oxide-semiconductor grid send driving signal to control second metal-oxide-semiconductor, the third
The drain electrode of the on or off of metal-oxide-semiconductor, second metal-oxide-semiconductor is electrically connected with the inverting input terminal of the first voltage comparator,
The drain electrode of the third metal-oxide-semiconductor is electrically connected with the non-inverting input terminal of the first voltage comparator, the first voltage comparator
Output end be electrically connected with the grid of first metal-oxide-semiconductor, the source electrode of first metal-oxide-semiconductor connects the negative terminal of battery, described
The drain electrode of one metal-oxide-semiconductor connects the anode of the battery.
2. a kind of MOS drive circuit applied to battery management according to claim 1, it is characterised in that:
The rectification circuit includes rectifier bridge and third capacitor, the third capacitor be connected in parallel on the rectifier bridge third end and
Between 4th end.
3. a kind of MOS drive circuit applied to battery management according to claim 2, it is characterised in that:
The voltage lifting circuit includes second voltage comparator, tertiary voltage comparator, the second voltage comparator it is anti-
Non-inverting input terminal reception first pwm signal of phase input terminal, the tertiary voltage comparator, the second voltage comparator
Non-inverting input terminal be connected to the inverting input terminal of the tertiary voltage comparator.
4. a kind of MOS drive circuit applied to battery management according to claim 3, it is characterised in that:
The non-inverting input terminal of the second voltage comparator is also connected with second resistance, the second capacitor, first diode, and described
First termination power voltage terminal of two resistance, the first end of second capacitor are connected to second end and the institute of the second resistance
It states between the cathode of first diode, the anode of second capacitance connection to the first diode.
5. a kind of MOS drive circuit applied to battery management according to claim 4, it is characterised in that:
First resistor, the first TVS are connected between the output end of the second voltage comparator and the first end of the rectifier bridge
Pipe, first capacitor, the first termination power voltage terminal of the first resistor, the first end of first TVS pipe is connected to described
Between the second end of first resistor and the first end of the first capacitor.
6. a kind of MOS drive circuit applied to battery management according to claim 5, it is characterised in that:
The 8th resistance, the 2nd TVS are connected between the output end of the second voltage comparator and the second end of the rectifier bridge
Pipe, the 4th capacitor, the first termination power voltage terminal of the 8th resistance, the first end of second TVS pipe are connected to institute
It states between the second end of the 8th resistance and the first end of the 4th capacitor.
7. a kind of MOS drive circuit applied to battery management according to any one of claims 1 to 6, it is characterised in that:
The switching signal circuit include the 4th voltage comparator, the 5th voltage comparator, the 4th voltage comparator it is anti-
Non-inverting input terminal reception second pwm signal of phase input terminal, the 5th voltage comparator, the 4th voltage comparator
Non-inverting input terminal be connected to the inverting input terminal of the 5th voltage comparator, the output end of the 4th voltage comparator connects
It is connected to the grid of second metal-oxide-semiconductor, the output end of the 5th voltage comparator is connected to the grid of the third metal-oxide-semiconductor.
8. a kind of MOS drive circuit applied to battery management according to claim 7, it is characterised in that:
The 14th resistance, are also connected between the output end of 4th voltage comparator and the grid of second metal-oxide-semiconductor
15 resistance, the 16th resistance and third diode, the first termination power voltage terminal of the 14th resistance, the described tenth
The second end of four resistance is connected to the first end of the 15th resistance, and the cathode of the third diode is connected to the described tenth
Between the second end of five resistance and the first end of the 16th resistance, the second end of the 16th resistance is connected to described
The anode of three diodes.
9. a kind of MOS drive circuit applied to battery management according to claim 8, it is characterised in that:
The 17th resistance, are also connected between the output end of 5th voltage comparator and the grid of the third metal-oxide-semiconductor
18 resistance, the 19th resistance and the 4th diode, the first termination power voltage terminal of the 17th resistance, the described tenth
The second end of seven resistance is connected to the first end of the 18th resistance, and the cathode of the 4th diode is connected to the described tenth
Between the second end of eight resistance and the first end of the 19th resistance, the second end of the 19th resistance is connected to described
The anode of four diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811505273.6A CN109302050A (en) | 2018-12-10 | 2018-12-10 | A kind of MOS drive circuit applied to battery management |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811505273.6A CN109302050A (en) | 2018-12-10 | 2018-12-10 | A kind of MOS drive circuit applied to battery management |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109302050A true CN109302050A (en) | 2019-02-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811505273.6A Pending CN109302050A (en) | 2018-12-10 | 2018-12-10 | A kind of MOS drive circuit applied to battery management |
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| Country | Link |
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| CN (1) | CN109302050A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11996723B2 (en) | 2019-03-21 | 2024-05-28 | Dongguan Nvt Technology Limited | Driving circuit for switch and battery control circuit using the same |
-
2018
- 2018-12-10 CN CN201811505273.6A patent/CN109302050A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11996723B2 (en) | 2019-03-21 | 2024-05-28 | Dongguan Nvt Technology Limited | Driving circuit for switch and battery control circuit using the same |
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