CN109301045B

CN109301045B - Light-emitting device, preparation method thereof and display device

Info

Publication number: CN109301045B
Application number: CN201811221378.9A
Authority: CN
Inventors: 董晓楠; 周宏儒; 田茂坤; 黄中浩; 赵永亮
Original assignee: BOE Technology Group Co Ltd; Chongqing BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Chongqing BOE Optoelectronics Technology Co Ltd
Priority date: 2018-10-19
Filing date: 2018-10-19
Publication date: 2020-07-31
Anticipated expiration: 2038-10-19
Also published as: CN109301045A

Abstract

The embodiment of the invention provides a light-emitting device, a preparation method thereof and a display device, relates to the technical field of display, and can solve the problem that a backlight assembly is easy to age and damage due to bending. The light emitting device includes: the first substrate base plate and the second substrate base plate are oppositely arranged; the first substrate base plate and the second substrate base plate are flexible substrate base plates; a first electrode and a second electrode for forming an electric field; a plurality of PN junctions disposed between the first substrate base plate and the second substrate base plate, the PN junctions for emitting photons under the action of the electric field; and the photoluminescent layer is arranged on the first substrate and used for emitting light under the excitation of photons emitted by the PN junction. The curved surface light source is used for providing a surface light source for the curved surface liquid crystal display panel.

Description

Light-emitting device, preparation method thereof and display device

Technical Field

The invention relates to the technical field of display, in particular to a light-emitting device, a preparation method of the light-emitting device and a display device.

Background

In recent years, various types of Display devices have been developed with rapid development of Display technologies, for example, liquid Crystal Display devices (L liquid Crystal Display, abbreviated as L CD) and Organic electroluminescent Display devices (Organic L light-Emitting Display, abbreviated as O L ED).

Although the O L ED display device is outstanding in its ultra-thin, self-luminous, large viewing angle and low power consumption, the O L ED display device has high development and production costs, which limit the mass production of the O L ED display device.

Because the flexible curved surface display technology has a large visual angle and brings special visual experience to people, the flexible curved surface display technology is favored by consumers, and various large-display technology companies invest huge capital to carry out pioneering research. However, for the curved liquid crystal display device, the backlight assembly, which is one of the major components of the liquid crystal display device, needs to be bent at a certain angle by using a bending frame to match the curved liquid crystal display panel, so that the flat backlight assembly is subjected to external stress and climate environment change for a long time, and the structure of the backlight assembly is easily aged and damaged, thereby greatly limiting the development of the curved liquid crystal display device.

Disclosure of Invention

The embodiment of the invention provides a light-emitting device, a preparation method thereof and a display device, which can solve the problem that a backlight assembly is easy to age and damage due to bending.

In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:

in a first aspect, a light emitting device is provided, a first substrate board and a second substrate board arranged oppositely; the first substrate base plate and the second substrate base plate are flexible substrate base plates; a first electrode and a second electrode for forming an electric field; a plurality of PN junctions disposed between the first substrate base plate and the second substrate base plate, the PN junctions for emitting photons under the action of the electric field; and the photoluminescent layer is arranged on the first substrate and used for emitting light under the excitation of photons emitted by the PN junction.

Preferably, the PN junction includes a semiconductor rod and a dopant doped in the semiconductor rod.

Preferably, the size of the semiconductor rods is in the nanometer order.

Preferably, the material of the semiconductor rod is a metal oxide semiconductor.

Preferably, the light emitting device further includes: and arranging an insulating buffer solvent between the first substrate base plate and the second substrate base plate, wherein the PN junction is immersed in the buffer solvent.

Preferably, the material of the photoluminescent layer is phosphor.

Preferably, the light emitting device further includes: and a light guide plate disposed on the first substrate.

In a second aspect, there is provided a display device comprising a liquid crystal display panel and the above-described light emitting device; the light emitting device is used for providing a surface light source for the liquid crystal display panel.

In a third aspect, there is provided a display apparatus including a first light emitting device, a second light emitting device, and a third light emitting device; the first light emitting device, the second light emitting device and the third light emitting device are the light emitting devices described above; the first light-emitting device, the second light-emitting device and the third light-emitting device are used for respectively emitting light of three primary colors; alternatively, the display device comprises a plurality of the above light emitting devices and a color filter disposed on the light emitting side of the light emitting devices; wherein the light emitting device is used for emitting white light.

In a fourth aspect, there is provided a method of manufacturing a light emitting device, comprising: providing a second substrate base plate; forming a plurality of PN junctions on the second substrate base plate to form a second substrate; the PN junction is used for emitting photons under the action of an electric field; forming a first substrate on the PN junction, wherein the first substrate comprises a first substrate and a photoluminescence layer; the first substrate base plate and the second substrate base plate are flexible substrate base plates; the first substrate and/or the second substrate comprise a first electrode and a second electrode; the first electrode and the second electrode are used for forming an electric field.

Preferably, forming a plurality of PN junctions on the second substrate includes: forming a plurality of semiconductor rods on the second substrate base plate; and doping the semiconductor rod to form a PN junction.

Further preferably, after forming a plurality of PN junctions on the second substrate and before forming the first substrate on the PN junctions, the method for manufacturing a light emitting device further includes: forming an insulating buffer solvent on the plurality of PN junctions.

The embodiment of the invention provides a light-emitting device, a preparation method thereof and a display device, wherein the light-emitting device comprises a first electrode, a second electrode, a PN junction and a photoluminescent layer, the PN junction can emit photons under the action of an electric field formed by the first electrode and the second electrode, and the photoluminescent layer can emit light under the excitation of the photons emitted by the PN junction, so that the light-emitting device can emit light.

In addition, the conventional lcd apparatus is not easy to bend, for example, for the direct-type backlight assembly, since the backlight source in the backlight assembly is composed of a plurality of L ED lamps disposed on the back plate, in order to dispose L ED lamps and control the wiring of L ED lamps, the back plate must be made of a material with high hardness, which results in that the backlight assembly is not easy to bend and has poor flexibility.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a first schematic structural diagram of a light emitting device according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a light emitting device according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a light-emitting device according to an embodiment of the present invention;

fig. 4a is a schematic structural diagram of a light emitting device according to an embodiment of the present invention;

fig. 4b is a schematic structural diagram of a light emitting device according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present invention;

fig. 6 is a schematic flow chart of a method for manufacturing a light-emitting device according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of forming a plurality of PN junctions on a second substrate according to an embodiment of the present invention;

FIG. 8 is a schematic structural diagram of a second substrate with a plurality of semiconductor rods formed thereon according to an embodiment of the present invention;

FIG. 9 is a schematic diagram illustrating a doping structure for doping a semiconductor rod according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram of a first substrate and a photoluminescent layer formed on a PN junction according to an embodiment of the present invention;

fig. 11 is a schematic structural diagram of forming a first substrate, a photoluminescent layer, and a light guide plate on a PN junction according to an embodiment of the present invention.

Reference numerals:

01-liquid crystal display panel; 02-a light emitting device; 10-a first substrate base plate; 20-a second substrate base plate; 30-a first electrode; 40-a second electrode; a 50-PN junction; 501-a P-type semiconductor layer; 502-N type semiconductor layer; 503-semiconductor rod; 504-a dopant; 60-a photoluminescent layer; 70-a buffer solvent; 80-light guide plate.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

An embodiment of the present invention provides a light emitting device, as shown in fig. 1 and 2, including: the first substrate base plate 10 and the second substrate base plate 20 are oppositely arranged, and the first substrate base plate 10 and the second substrate base plate 20 are flexible substrate base plates; a first electrode 30 and a second electrode 40, the first electrode 30 and the second electrode 40 for forming an electric field; a plurality of PN junctions 50 disposed between the first substrate base 10 and the second substrate base 20, the PN junctions 50 for emitting photons under the action of an electric field; and a photoluminescent layer 60 disposed on the first substrate 10 for emitting light upon excitation of photons emitted from the PN junction 50.

First, the materials of the first substrate 10 and the second substrate 20 are not limited, and are flexible and bendable. For example, may be an organic material.

The material of the first substrate 10 and the material of the second substrate 20 may be the same or different.

Second, the positions where the first electrode 30 and the second electrode 40 are disposed are not limited to the positions where the electric field can be formed. For example, the first electrode 30 and the second electrode 40 may be both disposed on the first substrate base 10; or may be both provided on the second base substrate 20; of course, the electrodes may be disposed on the first substrate 10 and the second substrate 20, respectively (fig. 1 and 2 in the description illustrate the case where the first electrode 30 and the second electrode 40 are disposed on the first substrate 10 and the second substrate 20, respectively). When the first electrode 30 and the second electrode 40 are disposed on the same substrate, the first electrode 30 and the second electrode 40 may be disposed on the same layer, and at this time, the first electrode 30 and the second electrode 40 are both in the shape of a strip; the first electrode 30 and the second electrode 40 may also be disposed on different layers, and in this case, both the first electrode 30 and the second electrode 40 may be stripe-shaped, or one may be stripe-shaped, and one may be planar-shaped.

Third, the structure of the PN junction 50 is not limited. Here, the PN junction 50 may be a homogeneous PN junction or a heterogeneous PN junction.

Two specific structures of the PN junction 50 are provided below.

The first method comprises the following steps: as shown in fig. 1, the PN junction 50 includes a P-type semiconductor layer 501 and an N-type semiconductor layer 502 which are stacked. Here, a transition region in the vicinity of an interface between the P-type semiconductor layer 501 and the N-type semiconductor layer 502 is referred to as a PN junction.

Here, the positions of the P-type semiconductor layer 501 and the N-type semiconductor layer 502 in the PN junction 50 are not limited, and the P-type semiconductor layer 501 may be close to the second substrate 20; the N-type semiconductor layer 502 may be adjacent to the second substrate 20.

And the second method comprises the following steps: as shown in fig. 2, the PN junction 50 includes a semiconductor rod 503 and a dopant 504 doped in the semiconductor rod 503.

The plurality of semiconductor rods 503 may be distributed in an array or may be distributed arbitrarily. The shape of the semiconductor rods 503 along a cross section parallel to the first substrate board 10 may be circular or square, but may be any regular or irregular shape.

Here, the material of the semiconductor rod 503 is not limited, and may be an organic semiconductor or an inorganic semiconductor, for example, a metal oxide semiconductor. Since the metal oxide semiconductor has the advantages of wide source, no pollution, environmental friendliness, stable physical and chemical properties, strong resistance to photo-induced corrosion, and the like, the material of the semiconductor rod 503 is preferably the metal oxide semiconductor in the embodiment of the present invention. Specifically, the metal oxide semiconductor may be ZnO (zinc oxide), CdO (cadmium oxide), or the like.

On this basis, the dopant 504 doped in the semiconductor rod 503 is not limited to be able to form the PN junction 50. For example, if the material of the semiconductor rod 503 is an N-type semiconductor, a PN junction can be formed by performing P-type electron injection doping; if the material of the semiconductor rod 503 is a P-type semiconductor, a PN junction can be formed by performing N-type electron injection doping. The PN junction formed by each semiconductor rod 503 doped by electron injection is a homogeneous PN junction.

Further, as a method for doping the semiconductor rods 503, an alloy method, a diffusion method, an ion implantation method, an epitaxial growth method, or the like can be selected.

The structure of the PN junction 50 includes, but is not limited to, the above two structures, and any structure including a PN junction is within the scope of the present invention.

In addition, the PN junction 50 may not be in contact with both the first electrode 30 and the second electrode 40; the PN junction 50 may also be in contact with the first electrode 30 and/or the second electrode 40. In order to make the PN junction 50 emit photons more efficiently under the action of the electric field, it is preferable in the embodiment of the present invention that the PN junction 50 is in contact with the first electrode 30 and/or the second electrode 40.

Fourth, in the light emitting device, by controlling the direction of the electric field formed by the first electrode 30 and the second electrode 40 or at least the direction of the electric field component of the formed electric field to be directed from the P-type region to the N-type region of the PN junction 50, photons are formed when the majority and minority carriers cross the potential barrier and then recombine at the PN junction 50 under the action of the electric field.

Fifth, the material of the photoluminescent layer 60 is not limited to be capable of emitting light under excitation of photons emitted from the PN junction 50.

Here, the material of the photoluminescent layer 60 may be an organic photoluminescent material, or may be an inorganic photoluminescent material, such as phosphor. In an embodiment of the present invention, the material of the photoluminescent layer 60 is preferably phosphor.

The material of the PN junction 50 and the material of the photoluminescent layer 60 should be matched to ensure that photons emitted from the PN junction 50 under the action of the electric field can excite the photoluminescent layer 60 to emit light. Since the shorter the wavelength of the photon, the more energy, the PN junction 50 preferably emits short wavelength photons under the influence of an electric field.

On this basis, the color of light emitted from the light emitting device depends on the color of light emitted from the photoluminescent layer 60, and the color of light emitted from the photoluminescent layer 60 is related to the material of the photoluminescent layer 60. The photoluminescent layer 60 may emit white light, red light, green light, etc.

The embodiment of the invention provides a light-emitting device, which comprises a first electrode 30, a second electrode 40, a PN junction 50 and a photoluminescent layer 60, wherein the PN junction 50 can emit photons under the action of an electric field formed by the first electrode 30 and the second electrode 40, and the photoluminescent layer 60 can emit light under the excitation of the photons emitted by the PN junction 50, so that the light-emitting device can emit light.

In addition, the conventional lcd apparatus is not easy to bend due to a number of reasons, for example, for the direct-type backlight assembly, since the backlight source in the backlight assembly is composed of a plurality of L ED (L light-emitting diode) lamps disposed on the back plate, in order to dispose L ED lamps and to control the wiring of L ED lamps, the back plate must be made of a material with high hardness, which results in the backlight assembly being not easy to bend and having poor flexibility.

As shown in fig. 2, when the PN junction 50 includes a semiconductor rod 503 and a dopant 504 doped in the semiconductor rod 503, the semiconductor rod 503 of the preferred embodiment of the present invention has a size of nanometer.

In the embodiment of the invention, the size of the semiconductor rod 503 is nano-scale, so that the light-emitting device has excellent mechanical, mechanical and physicochemical properties by utilizing the nano-scale effect, and the flexibility and the bending property of the light-emitting device are further improved.

Preferably, as shown in fig. 3, the light emitting device further includes: an insulating buffer solvent 70 between the first substrate board 10 and the second substrate board 20 is provided, and the PN junction 50 is immersed in the buffer solvent 70.

Here, the material of the buffer solvent 70 is not limited, and may be an organic buffer solvent or an inorganic buffer solvent. Since the inorganic buffer solvent is likely to generate induced static electricity under the action of an electric field, and the organic buffer solvent has a strong electron binding force, it is preferable in the embodiment of the present invention that the buffer solvent 70 is an organic buffer solvent.

In the embodiment of the invention, since the light emitting device includes the buffer solvent 70, the buffer solvent 70 can relieve the external stress, thereby further improving the flexibility of the light emitting device and enabling the light emitting device to be more easily bent.

Preferably, as shown in fig. 4a and 4b, the light emitting device further includes a light guide plate 80 disposed on the first substrate base 10.

As shown in fig. 4a, the light guide plate 80 may be disposed on a side of the photoluminescent layer 60 away from the first substrate 10, and at this time, photons emitted from the PN junction 50 are homogenized by the light guide plate 80 and then irradiate the photoluminescent layer 60, so that the photoluminescent layer 60 emits light uniformly; as shown in fig. 4b, the light guide plate 80 may be disposed between the photoluminescent layer 60 and the first substrate 10, and at this time, photons emitted from the PN junction 50 strike the photoluminescent layer 60 to excite the photoluminescent layer 60 to emit light, and light emitted from the photoluminescent layer 60 is uniformly emitted after passing through the light guide plate 80.

In the embodiment of the present invention, since the light emitting device includes the light guide plate 80 disposed on the first substrate 10, it is possible to ensure that the light emitted from the light emitting device is uniform. When the light emitting device is used to provide a surface light source for a liquid crystal display panel, it can be ensured that the surface light source is uniform.

An embodiment of the present invention provides a display apparatus, as shown in fig. 5, including a liquid crystal display panel 01 and the above-described light emitting device 02, where the light emitting device 02 is used to provide a surface light source for the liquid crystal display panel 01.

Here, the liquid crystal display panel 01 includes an array substrate, a facing-cell substrate, and a liquid crystal layer disposed between the array substrate and the facing-cell substrate. The color filter may be disposed on the cartridge substrate or on the array substrate. The Color Filter is disposed on the Array substrate, which may also be referred to as a COA substrate (Color Filter on Array).

Embodiments of the present invention provide a display apparatus, the display apparatus includes the above-mentioned light emitting device 02, and the display apparatus includes the light emitting device 02 having the same structure and advantageous effects as the light emitting device 02 provided in the above-mentioned embodiments, and since the above-mentioned embodiments have described the structure and advantageous effects of the light emitting device 02 in detail, the detailed description is omitted here.

The embodiment of the invention also provides another display device, which comprises a first light-emitting device, a second light-emitting device and a third light-emitting device; the first light emitting device, the second light emitting device, and the third light emitting device are the light emitting devices 02 described above; the first light-emitting device, the second light-emitting device and the third light-emitting device are used for respectively emitting light of three primary colors; alternatively, the display device includes a plurality of the above-described light emitting devices 02 and a color filter provided on the light emitting side of the light emitting devices 02; among them, the light emitting device 02 is used to emit white light.

Note that one light-emitting device 02 in the display device corresponds to one sub-pixel. The luminance of light emitted from the light emitting device 02 may be controlled by controlling the magnitude of the electric field generated by the first electrode 30 and the second electrode 40 in the light emitting device 02, thereby adjusting the gray scale of each sub-pixel.

Here, adjacent light emitting devices 02 in the display apparatus may be spaced apart from each other by a pixel defining layer.

The first light-emitting device, the second light-emitting device and the third light-emitting device are used for respectively emitting three primary color lights, and the three primary color lights can be red light, green light and blue light; yellow, magenta and cyan light are also possible.

Embodiments of the present invention provide a display device, in which when the light emitting device 02 is a flexible light emitting device, the display device is a flexible display device.

An embodiment of the present invention provides a method for manufacturing a light emitting device, as shown in fig. 6, including:

s100, a second substrate 20 is provided.

Since the second substrate 20 is a flexible substrate, the flexible second substrate 20 may be formed on a rigid substrate, and then each film layer may be formed on the second substrate 20, and after the light emitting device 02 is manufactured, the second substrate 20 may be peeled off from the rigid substrate.

S101, forming a plurality of PN junctions 50 on a second substrate 20 to form a second substrate; the PN junction 50 is used to emit photons under the influence of an electric field.

Here, no limitation is made on how the PN junction 50 is formed on the second substrate board 20, and two specific implementations are provided below.

The first method comprises the following steps: as shown in fig. 7, a P-type semiconductor layer thin film and an N-type semiconductor thin film are formed and patterned on the second substrate 20 to form a P-type semiconductor layer 501 and an N-type semiconductor layer 502, which are stacked as shown in fig. 7.

And the second method comprises the following steps: s200, as shown in fig. 8, a plurality of semiconductor rods 503 are formed on the second substrate 20.

Here, how to form the plurality of semiconductor rods 503 on the second substrate base plate 20 is not limited. For example, a plurality of semiconductor rods 503 may be grown on the second substrate base plate 20 using an electrochemical deposition method. For another example, a semiconductor thin film is formed on the second substrate 20, and the semiconductor thin film is patterned to form a plurality of semiconductor rods 503.

On this basis, the size of the semiconductor rods 503 is not limited, and in order to provide good flexibility to the formed light emitting device 02, the size of the semiconductor rods 503 is preferably in the nanometer order according to the embodiment of the present invention. When the size of the semiconductor rods 503 is in the nanometer order, the embodiment of the present invention preferably grows a plurality of semiconductor rods 503 on the second substrate base plate 20 using an electrochemical deposition method.

Here, the plurality of semiconductor rods 503 formed on the second substrate base plate 20 may be arranged in an array, or may be arranged arbitrarily. The shape of the semiconductor rods 503 along a cross section parallel to the first substrate board 10 may be circular or square, but may be any regular or irregular shape.

The material of the semiconductor rod 503 is not limited, and may be an organic semiconductor or an inorganic semiconductor, such as a metal oxide semiconductor. In the embodiment of the present invention, the material of the semiconductor rod 503 is preferably a metal oxide semiconductor. Specifically, the metal oxide semiconductor may be ZnO, CdO, or the like.

S201, as shown in fig. 9, the semiconductor bar 503 is doped to form a PN junction 50.

Here, the method of doping the semiconductor rods 503 is not limited, and the semiconductor rods 503 may be doped by a diffusion method, an ion implantation method, or the like. Preferably, in the embodiment of the present invention, electron injection doping is performed using an acceptor gas (i.e., a reaction gas) by using a PECVD (plasma enhanced Chemical Vapor Deposition) technique.

The dopant 504 doped in the semiconductor rod 503 is not limited to be able to form the PN junction 50. For example, if the material of the semiconductor rod 503 is an N-type semiconductor, P-type electron injection doping is performed; if the material of the semiconductor rod 503 is a P-type semiconductor, N-type electron injection doping is performed. And performing electron injection doping on the semiconductor rod 503 to form a PN junction which is a homogeneous PN junction.

S102, as shown in fig. 10, forming a first substrate on the PN junction 50, the first substrate including a first substrate 10 and a photoluminescent layer 60; the first substrate 10 and the second substrate 20 are flexible substrates, and the first substrate and/or the second substrate comprise a first electrode 30 and a second electrode 40; the first electrode 30 and the second electrode 40 are used to form an electric field (the first electrode 30 and the second electrode 40 are not shown in fig. 10).

The positions where the first electrode 30 and the second electrode 40 are disposed are not limited to the positions where the electric field can be formed. For example, the first electrode 30 and the second electrode 40 may be both formed on the first substrate base plate 10; may be formed on the second substrate base plate 20; of course, they may be formed on the first substrate board 10 and the second substrate board 20, respectively. If the first electrode 30 and/or the second electrode 40 are formed on the second substrate 20, the first electrode 30 and/or the second electrode 40 may be formed on the second substrate 20, and then the PN junction 50 may be formed; if the first electrode 30 and/or the second electrode 40 are formed on the first substrate 10, the first electrode 30 and/or the second electrode 40 may be formed on the first substrate 10, and then the photoluminescent layer 60 may be formed; the photoluminescent layer 60 may be formed on the first substrate 10, and then the first electrode 30 and/or the second electrode 40 may be formed.

Here, the material of the first substrate 10 and the material of the second substrate 20 may be the same or different.

As shown in fig. 10, when the first substrate includes the first substrate 10 and the photoluminescent layer 60, the photoluminescent layer 60 may be formed on the first substrate 10, and then the first substrate may be formed on the PN junction 50.

Further, as shown in fig. 11, the first substrate may include a light guide plate 80 in addition to the first substrate 10 and the photoluminescent layer 60. The light guide plate 80 may be formed on a side of the photoluminescent layer 60 away from the first substrate 10, and at this time, photons emitted from the PN junction 50 are homogenized by the light guide plate 80 and then irradiate the photoluminescent layer 60, so that the photoluminescent layer 60 uniformly emits light; the light guide plate 80 may also be formed between the photoluminescent layer 60 and the first substrate 10, and at this time, photons emitted from the PN junction 50 strike the photoluminescent layer 60 to make the photoluminescent layer 60 emit light, and the light emitted from the photoluminescent layer 60 is uniformly emitted after passing through the light guide plate 80. The light guide plate 80 may make the light emitting device 02 emit light uniformly.

As described above, the photoluminescent layer 60 may be formed directly on the light guide plate 80 or may be formed directly on the first substrate 10. When the photoluminescent layer 60 is formed on the light guide plate 80, the first substrate 10 may also be formed on the light guide plate 80. In addition, the photoluminescent layer 60 may be formed through a coating process. Specifically, for example, the photoluminescent layer 60 may be formed on the light guide plate 80, and the first underlying substrate 10 may be formed on the photoluminescent layer 60. The first substrate 10 may be formed on the photoluminescent layer 60 by covering the first substrate 10 on the photoluminescent layer 60, or by depositing, for example, the first substrate 10 on the photoluminescent layer 60. For another example, the photoluminescent layer 60 is formed on the first substrate 10, and the first substrate 10 on which the photoluminescent layer 60 is formed on the light guide plate 80.

Embodiments of the present invention provide a method for manufacturing a light emitting device, where the method for manufacturing the light emitting device 02 has the same structure and beneficial effects as those of the light emitting device 02 provided in the above embodiments, and since the structure and beneficial effects of the light emitting device 02 have been described in detail in the above embodiments, further description is omitted here.

Preferably, after step S101 and before step S102, the method for manufacturing a light emitting device further includes: an insulating buffer solvent 70 is formed on the plurality of PN junctions 50.

Here, the buffer solvent 70 may be sprayed or coated on the plurality of PN junctions 50.

The material of the buffer solvent 70 is not limited, and may be an organic buffer solvent or an inorganic buffer solvent. Since the inorganic buffer solvent is likely to generate induced static electricity under the action of an electric field, and the organic buffer solvent has a strong electron binding force, it is preferable in the embodiment of the present invention that the buffer solvent 70 is an organic buffer solvent.

In the embodiment of the present invention, the insulating buffer solvent 70 is formed on the plurality of PN junctions 50, and since the external stress can be relieved by the buffer solvent 70, the flexibility of the light emitting device 02 is improved. When the light emitting device 02 is used to provide a light source for a curved liquid crystal display panel, the light emitting device 02 can be prevented from being aged and damaged by external stress and climate environmental changes.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims

1. A light emitting device, comprising:

the first substrate base plate and the second substrate base plate are oppositely arranged; the first substrate base plate and the second substrate base plate are flexible substrate base plates;

a first electrode and a second electrode for forming an electric field;

a plurality of PN junctions disposed between the first substrate base plate and the second substrate base plate, the PN junctions for emitting photons under the action of the electric field;

the photoluminescent layer is arranged on the first substrate base plate and is used for emitting light under the excitation of photons emitted by the PN junction;

the PN junction includes a semiconductor rod and a dopant doped within the semiconductor rod.

2. The light-emitting device according to claim 1, wherein the semiconductor rods have a size of a nanometer order.

3. The light-emitting device according to claim 1, wherein a material of the semiconductor rod is a metal oxide semiconductor.

4. The light-emitting device according to claim 1, further comprising: and arranging an insulating buffer solvent between the first substrate base plate and the second substrate base plate, wherein the PN junction is immersed in the buffer solvent.

5. The light-emitting device according to claim 1, wherein a material of the photoluminescent layer is a phosphor.

6. The light-emitting device according to claim 1, further comprising: and a light guide plate disposed on the first substrate.

7. A display device comprising a liquid crystal display panel and the light-emitting device according to any one of claims 1 to 6; the light emitting device is used for providing a surface light source for the liquid crystal display panel.

8. A display apparatus, characterized in that the display apparatus comprises a first light emitting device, a second light emitting device, and a third light emitting device; the first light emitting device, the second light emitting device, and the third light emitting device are the light emitting device according to any one of claims 1 to 6; the first light-emitting device, the second light-emitting device and the third light-emitting device are used for respectively emitting light of three primary colors;

alternatively, the display device comprises a plurality of light emitting devices according to any one of claims 1 to 6 and a color filter disposed on a light emitting side of the light emitting devices; wherein the light emitting device is used for emitting white light.

9. A method of making a light emitting device, comprising:

providing a second substrate base plate;

forming a plurality of PN junctions on the second substrate base plate to form a second substrate; the PN junction is used for emitting photons under the action of an electric field;

forming a first substrate on the PN junction, wherein the first substrate comprises a first substrate and a photoluminescence layer;

the first substrate base plate and the second substrate base plate are flexible substrate base plates; the first substrate and/or the second substrate comprise a first electrode and a second electrode; the first electrode and the second electrode are used for forming an electric field;

wherein forming a plurality of PN junctions on the second substrate base plate comprises:

forming a plurality of semiconductor rods on the second substrate base plate;

and doping the semiconductor rod to form a PN junction.

10. The method for manufacturing a light-emitting device according to claim 9, wherein after forming a plurality of PN junctions on the second substrate board and before forming the first substrate board on the PN junctions, the method for manufacturing a light-emitting device further comprises:

forming an insulating buffer solvent on the plurality of PN junctions.