CN109300886B - 一种六边形芯片平面级联显示屏及其生产工艺 - Google Patents
一种六边形芯片平面级联显示屏及其生产工艺 Download PDFInfo
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Abstract
本发明一种六边形芯片平面级联显示屏及其生产工艺,通过将每一组芯片单元,一组组级联,组成单元板,能让面射型一组组芯片单元,移到显示屏单元板表层,有效提高发光效率,降低使用成本;采用该工艺制造显示屏工艺过程简单,可大幅提高封装效率及良率,降低生产成本,延长显示屏使用寿命;芯片单元组之间无缝结合,将显示屏像素间距实现微米级跨越;每个芯片单元组中的芯片均为正六边形,可以带来无限扩展延伸,且不影响像素间距;通过刻蚀出规则排列的圆锥体来实现光在衬底内的多次反射,从而达到芯片外部光的取光效率的提升;通过2次转移技术,使芯片的正负电极直接与硅基板连接,结构更简单;通过增加金属凸点,使得正负极在一个平面上。
Description
技术领域
本发明属于半导体技术领域,尤其涉及一种新型显示屏及其显示屏生产工艺。
背景技术
一块好的显示屏最关键的在于使用客户的肯定,所以其分辨率,色彩还原度及亮度等因素都影响着人们的直观感觉。
进入2018年以来,Micro/Mini LED量产进程不断加速的消息,让LED背光和显示屏行业都为之“振奋”。但是,在Micro/Mini LED落地之声就在耳畔之时,关于这种新品的“成本”担忧亦风生水起,Micro/Mini LED厂商加速上中游产业链布局,同时,LED技术本身一直在不断进步中,近来有许多研究,表明LED技术在不同应用领域获得新成果,能否让RGB芯片单元直接固化在COB板上,实现更小间距、更小单元的技术跨越,从Mini跨越到Micro,实现质的飞跃,从技术革新的核心工艺看,Micro LED技术如何突破?怎么实现?是Micro LED产品落地的重中之重。
另外,传统的显示屏在芯片切割完毕后,直接对整颗LED芯片进行封装,驱动电路与封装好的灯珠正负极连接,驱动封装好的灯珠。
发明内容
本发明实施例提供了一种光色质量好、工序简单、成本可控的六边形芯片平面级联显示屏及其生产工艺。
本发明是这样实现的:
一种六边形芯片平面级联显示屏,包括单元板,所述单元板由若干芯片单元级联组成,各所述芯片单元分别与一倒装焊盘连接,各所述倒装焊盘均位于所述单元板上,所述芯片单元分别由一红光芯片、一蓝光芯片、一绿光芯片相互连接组成,其中,所述蓝光芯片和所述绿光芯片组成蓝绿光芯片,所述芯片单元的一侧为蓝绿光芯片结构,另一侧为红光芯片结构,所述红光芯片、蓝光芯片以及绿光芯片上分别设有正负极,且与所述倒装焊盘上的正负极一一对应。
在本具体实施例中还包括,所述芯片为正六边形结构,所述正六边形的每边为8um。
在本具体实施例中还包括,所述倒装焊盘上的正极为圆形,负极为正六边形。
在本具体实施例中还包括,所述蓝绿光芯片结构从上到下依次为蓝宝石衬底层、缓冲层以及N型氮化镓层,所述N型氮化镓层下表面分别设有MQW有源层和N电极,所述MQW有源层下表面设有P型氮化镓层,所述P型氮化镓层下表面设有P电极,所述蓝宝石衬底层与所述缓冲层之间均匀设有若干圆锥体,所述N型氮化镓层与所述N电极之间设有金属凸点。
在本具体实施例中还包括,所述红光芯片结构从上到下依次为砷化镓衬底层、缓冲层以及N型铝镓铟磷下限制层,所述N型铝镓铟磷下限制层下表面分别设有铝镓铟磷有源层和N电极,所述铝镓铟磷有源层下表面设有P型铝镓铟磷上限制层,所述P型铝镓铟磷上限制层下表面设有P电极,所述砷化镓衬底层与所述缓冲层之间均匀设有若干圆锥体,所述N型铝镓铟磷下限制层与所述N电极之间设有金属凸点。
在本具体实施例中还包括,所述N电极与所述P电极的下表面位于同一水平线上。
本发明还提供了一种显示屏生产工艺,包括如下步骤:
S1、同时在所述蓝宝石衬底层和砷化镓衬底层的上表面上刻蚀出规则排列的圆锥体,形成PSS层,在所述PSS层上进行外延生长,分别制作蓝绿光外延片和红光外延片;
S2、在所述蓝绿光外延片和红光外延片上经过一系列光刻、台阶刻蚀、ITO蒸镀、电极制作、保护层蒸镀、衬底减薄、背镀反射层等工艺,形成芯片;
S3、按照每边长度为8um的正六边形进行芯片切割;
S4、采用离子薄膜转移技术,进行芯片两次转移;
S5、将芯片单元中红光芯片正极、绿光芯片正极、蓝光芯片正极与单元板的倒装焊盘的正极分别相连;
S6、用硅胶胶粘剂在室温48h固化,将若干芯片单元构成单元板;
S7、再将封装好的单元板有序拼合在一起,完成显示屏的制备工艺。
在本具体实施例中还包括,在步骤S1中,所述蓝绿光外延片从上到下依次为缓冲层以及N型氮化镓层,所述N型氮化镓层下表面分别设有MQW有源层和N电极,所述MQW有源层下表面设有P型氮化镓层,所述P型氮化镓层下表面设有P电极,所述N型氮化镓层与所述N电极之间设有金属凸点,所述N电极与所述P电极的下表面位于同一水平线上。
在本具体实施例中还包括,在步骤S1中,从上到下依次为缓冲层以及N型铝镓铟磷下限制层,所述N型铝镓铟磷下限制层下表面分别设有铝镓铟磷有源层和N电极,所述铝镓铟磷有源层下表面设有P型铝镓铟磷上限制层,所述P型铝镓铟磷上限制层下表面设有P电极,所述N型铝镓铟磷下限制层与所述N电极之间设有金属凸点,所述N电极与所述P电极的下表面位于同一水平线上。
在本具体实施例中还包括,在步骤S4中,首先将芯片P电极和N电极与临时基板进行贴合,通过范德华力吸附芯片,再通过物理或化学腐蚀的方法,除去所述蓝宝石衬底层和砷化镓衬底层,仅保留光刻后成型芯片,最后将成型红光芯片、绿光芯片、蓝光芯片分别或者同时移到硅基板上,组成芯片单元。
本发明的有益效果为:1、采用正六边形平面互联技术,将接合线材以细薄扁平的金属接线取代,每个芯片都切成正六边形芯片,分别由1个红光芯片、1个蓝光芯片、1个蓝光芯片组成RGB芯片单元,每一组芯片单元,一组组级联,组成单元板,能让面射型一组组芯片单元,移到显示屏单元板表层,有效提高发光效率,降低使用成本;
2、采用该工艺制造显示屏工艺过程简单,可大幅提高封装效率及良率,降低生产成本,延长显示屏使用寿命;
3、芯片单元组之间无缝结合,将显示屏像素间距实现微米级跨越;
4、每个芯片单元组中的芯片均为正六边形,可以带来无限扩展延伸,且不影响像素间距;
5、通过刻蚀出规则排列的圆锥体来实现光在衬底内的多次反射,从而达到芯片外部光的取光效率的提升;
6、芯片电极与电极间不需要金线连接,将通过2次转移技术,使芯片的正负电极直接与硅基板连接,结构更简单,且可靠性提高;
7、剥离蓝宝石衬底层和砷化镓衬底层取光效率增加;
8、通过增加金属凸点,正负极在一个平面上,形成了出光效率更高的类倒装芯片结构。
附图说明
图1是本发明芯片单元的外观结构示意图。
图2是本发明芯片单元与倒装焊盘结构示意图。
图3是本发明芯片单元内部结构示意图。
图4是本发明蓝宝石衬底层与圆锥体连接示意图。
图5是本发明砷化镓衬底层与圆锥体连接示意图。
图6是本发明显示屏的工艺流程图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
以下结合具体实施例对本发明的实现进行详细描述:
如图1-5所示,本发明提供了一种六边形芯片平面级联显示屏,包括单元板,单元板由若干芯片单元100级联组成,各芯片单元100分别与一倒装焊盘连接,各倒装焊盘均位于单元板上,芯片单元100分别由一红光芯片1、一蓝光芯片2、一绿光芯片3相互连接组成,其中,蓝光芯片2和绿光芯片3组成蓝绿光芯片,芯片单元100的一侧为蓝绿光芯片结构110,另一侧为红光芯片结构120,所述红光芯片1、蓝光芯片2以及绿光芯片3上分别设有正负极,且与所述倒装焊盘上的正负极一一对应。
在本具体实施例中还包括,所述芯片为正六边形结构,正六边形的每边为8um。具体地,芯片切割,先编程,按照正六边形的每边为8um的长度,用810nm虹膜识别芯片配合摄像镜头,实现智能化机器人激光切割大元片。
在本具体实施例中还包括,所述倒装焊盘上的正极101为圆形,负极102为正六边形。
在本具体实施例中还包括,所述蓝绿光芯片结构110从上到下依次为蓝宝石衬底层9、缓冲层(未示出)以及N型氮化镓层7,所述N型氮化镓层7下表面分别设有MQW有源层8和N电极5,所述MQW有源层8下表面设有P型氮化镓层6,所述P型氮化镓层6下表面设有P电极4,所述蓝宝石衬底层9与所述缓冲层之间均匀设有若干圆锥体91,所述N型氮化镓层7与所述N电极5之间设有金属凸点(未示出)。
此外,所述MQW有源层8还可以用多量子阱有源层代替。其中,缓冲层为U-GaN层。
在本具体实施例中还包括,所述红光芯片结构120从上到下依次为砷化镓衬底层10、缓冲层以及N型铝镓铟磷下限制层11,所述N型铝镓铟磷下限制层11下表面分别设有铝镓铟磷有源层12和N电极5,所述铝镓铟磷有源层12下表面设有P型铝镓铟磷上限制层13,所述P型铝镓铟磷上限制层13下表面设有P电极4,所述砷化镓衬底层10与所述缓冲层之间均匀设有若干圆锥体101,所述N型铝镓铟磷下限制层11与所述N电极5之间设有金属凸点。
具体地,常见的芯片结构分为正装结构,垂直结构和倒装结构。由于垂直结构应用较少,此处仅分析正装结构和倒装结构。倒装结构与正装结构主要差别:1)倒装芯片正负电极可以设计在一个平面上,使连接更方便;2)倒装芯片电极与电极间不需要金线连接,正负极直接与基板接触,结构更简单,且可靠性提高;3)更容易剥离蓝宝石衬底层9和砷化镓衬底层10,取光效率增加。但是,从芯片角度看,如想直接将芯片的正负极与硅基板连接,当然可以把正装芯片倒过来,用正装芯片实现倒装封装形式。但是正装芯片的P电极4和N电极5不在一个平面上,要用正装芯片实现倒装封装,需要制作特殊的金属凸点,使不在一个平面上的P电极4和N电极5与硅基板相连;此外正装芯片包含金线,本身结构也更复杂,影响LED芯片的出光效果。所以本发明将采用正负极在一个平面上,且出光效率更高的类倒装芯片结构。
同时,通过刻蚀出规则排列的圆锥体91来实现光在衬底内的多次反射,从而达到芯片外部光的取光效率的提升。
在本具体实施例中还包括,所述N电极5与所述P电极4的下表面位于同一水平线上。
本发明能应用在研发产品和生产上,并整合LED在产业上的应用,促进未来各应用领域的机动性,本发明不仅能应用到大尺寸电视墙和大型显示屏,也能应用在环绕照明及感测系统,同时也可应用在手机、智能摄像机上,并能带动信息娱乐化等潜在市场。采用该工艺制造显示屏工艺过程简单,可大幅提高封装效率及良率,降低生产成本,延长显示屏的使用寿命。
请再参考图6,本发明还提供了一种显示屏生产工艺,包括如下步骤:
S1、同时在所述蓝宝石衬底层9和砷化镓衬底层10的下表面上刻蚀出规则排列的圆锥体91,形成PSS层,在所述PSS层上进行外延生长,分别制作蓝绿光外延片和红光外延片;
S2、在所述蓝绿光外延片和红光外延片上经过一系列光刻、台阶刻蚀、ITO蒸镀、电极制作、保护层蒸镀、衬底减薄、背镀反射层等工艺,形成芯片;
S3、按照每边长度为8um的正六边形进行芯片切割;
S4、采用离子薄膜转移技术,进行芯片两次转移;
S5、将芯片单元100中红光芯片1正极、绿光芯片3正极、蓝光芯片2正极与单元板的倒装焊盘的正极分别相连;
S6、用硅胶胶粘剂在室温48h固化,将若干芯片单元100构成单元板;
S7、再将封装好的单元板有序拼合在一起,完成显示屏的制备工艺。
在本具体实施例中还包括,在步骤S1中,所述蓝绿光外延片从上到下依次为缓冲层以及N型氮化镓层7,所述N型氮化镓层7下表面分别设有MQW有源层8和N电极5,所述MQW有源层8下表面设有P型氮化镓层6,所述P型氮化镓层6下表面设有P电极4,所述N型氮化镓层7与所述N电极5之间设有金属凸点,所述N电极5与所述P电极4的下表面位于同一水平线上。
此外,所述MQW有源层8还可以用多量子阱有源层代替。其中,缓冲层为U-GaN层。
在本具体实施例中还包括,在步骤S1中,从上到下依次为缓冲层以及N型铝镓铟磷下限制层11,所述N型铝镓铟磷下限制层11下表面分别设有铝镓铟磷有源层12和N电极5,所述铝镓铟磷有源层12下表面设有P型铝镓铟磷上限制层13,所述P型铝镓铟磷上限制层13下表面设有P电极4,所述N型铝镓铟磷下限制层11与所述N电极5之间设有金属凸点,所述N电极5与所述P电极4的下表面位于同一水平线上。
采用正六边形平面互联技术,将接合线材以细薄扁平的金属接线取代,每个芯片都切成正六边形芯片,分别由1个红光芯片1、1个蓝光芯片2、1个蓝光芯片3组成RGB芯片单元100,每一组芯片单元100,一组组级联,组成单元板,能让面射型一组组芯片单元100,移到显示屏单元板表层,有效提高发光效率,降低使用成本。
在本具体实施例中还包括,在步骤S4中,首先将芯片P电极4和N电极5与临时基板进行贴合,通过范德华力吸附芯片,再通过物理或化学腐蚀的方法,除去所述蓝宝石衬底层9和砷化镓衬底层10,仅保留光刻后成型芯片,最后将成型红光芯片1、绿光芯片3、蓝光芯片2分别或者同时移到硅基板上,组成芯片单元100。芯片单元100组之间无缝结合,将显示屏像素间距实现微米级跨越;由于每个芯片单元100组中的芯片均为正六边形,可以带来无限扩展延伸,且不影响像素间距。
具体地,范德华力(又称分子作用力)产生于分子或原子之间的静电相互作用。其能量计算的经验方程为:U=B/r12-A/r6(对于2个碳原子间,其参数值为B=11.5×10-6kJ·nm12/mol;A=5.96×10-3kJnm^6/mol;不同原子间A、B有不同取值)当两原子彼此紧密靠近电子云相互重叠时,发生强烈排斥,排斥力与距离12次方成反比。图中低点是范德华力维持的距离作用力最大,称范德华半径。分子引力与距离6次方成反比,分子斥力与距离12次方成反比。
在显示屏后续制作过程中,将通过2次转移技术,使芯片的正负电极直接与硅基板连接。由于芯片尺寸非常小,留给芯片的引线布线空间不足,故本发明采用电极和硅基板直接键合的形式,这个形式类似于芯片的倒装封装结构,只是芯片倒装封装结构是封装一颗芯片,而本发明的显示屏是将数颗芯片单元先与硅基板直接连接,再进行封装。
具体地,传统的LED显示屏在芯片切割完毕后,直接对整颗芯片进行封装,驱动电路与封装好的灯珠正负极连接,再驱动封装好的灯珠;而本发明的芯片在光刻步骤后,并不会直接封装,这是由于封装材料会增大芯片体积,无法实现芯片间的微距。需要将芯片直接从蓝宝石衬底层9和砷化镓衬底层10转移到硅基板上,将红光芯片1、绿光芯片3、蓝光芯片2分别或者同时转移到硅基板上,组成了芯片单元,再将芯片单元中红光芯片1正极、绿光芯片3正极、蓝光芯片2正极直接与显示屏单元板的倒装焊盘正极分别相连。由于需要将红色、蓝色、绿色芯片分别进行转移或者同时进行转移,组成芯片单元100,需要非常精准的工艺完成芯片单元的定位。
在本发明的描述中,需要理解的是,术语“内”、“上表面”、“上”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的单元或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本实用新型的限制。
在本发明中,除非另有明确的规定和限定,术语“安装”、“设有”、“连接”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系,除非另有明确的限定。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
尽管已描述了本申请实施例的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例做出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本申请实施例范围的所有变更和修改。
最后,还需要说明的是,在本文中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者终端设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的相同要素。
以上对本申请所提供的一种身体信息检测设备及跌倒检测系统,进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的一般技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。
Claims (10)
1.一种显示屏生产工艺,其特征在于,包括如下步骤:
S1、同时在蓝宝石衬底层和砷化镓衬底层的上表面上刻蚀出规则排列的圆锥体,形成PSS层,在PSS层上进行外延生长,分别制作蓝绿光外延片和红光外延片;
S2、在外延片上经过一系列光刻、台阶刻蚀、ITO蒸镀、电极制作、保护层蒸镀、衬底减薄、背镀反射层工艺,形成芯片;
S3、按照每边长度为8um的正六边形进行芯片切割;
S4、采用离子薄膜转移技术,进行芯片两次转移;
S5、将芯片单元中红光芯片正极、绿光芯片正极、蓝光芯片正极与单元板的倒装焊盘的正极分别相连;
S6、用硅胶胶粘剂在室温48h固化,将若干芯片单元构成单元板;
S7、再将封装好的单元板有序拼合在一起,完成显示屏的制备工艺。
2.根据权利要求1所述的显示屏生产工艺,其特征在于,在步骤S1中,所述蓝绿光外延片从上到下依次为缓冲层以及N型氮化镓层,所述N型氮化镓层下表面分别设有MQW有源层和N电极,所述MQW有源层下表面设有P型氮化镓层,所述P型氮化镓层下表面设有P电极,所述N型氮化镓层与所述N电极之间设有金属凸点,所述N电极与所述P电极的下表面位于同一水平线上。
3.根据权利要求1所述的显示屏生产工艺,其特征在于,在步骤S1中,从上到下依次为缓冲层以及N型铝镓铟磷下限制层,所述N型铝镓铟磷下限制层下表面分别设有铝镓铟磷有源层和N电极,所述铝镓铟磷有源层下表面设有P型铝镓铟磷上限制层,所述P型铝镓铟磷上限制层下表面设有P电极,所述N型铝镓铟磷下限制层与所述N电极之间设有金属凸点,所述N电极与所述P电极的下表面位于同一水平线上。
4.根据权利要求1所述的显示屏生产工艺,其特征在于,在步骤S4中,首先将芯片P电极和N电极与临时基板进行贴合,通过范德华力吸附芯片,再通过物理或化学腐蚀的方法,除去所述蓝宝石衬底层和砷化镓衬底层,仅保留光刻后成型芯片,最后将成型红光芯片、绿光芯片、蓝光芯片分别或者同时移到硅基板上,组成芯片单元。
5.一种六边形芯片平面级联显示屏,其特征在于,采用权利要求1-4任一项所述显示屏生产工艺制得;
包括单元板,所述单元板由若干芯片单元级联组成,各所述芯片单元分别与一倒装焊盘连接,各所述倒装焊盘均位于所述单元板上,所述芯片单元分别由一红光芯片、一蓝光芯片、一绿光芯片相互连接组成,其中,所述蓝光芯片和所述绿光芯片组成蓝绿光芯片,所述芯片单元的一侧为蓝绿光芯片结构,另一侧为红光芯片结构,所述红光芯片、蓝光芯片以及绿光芯片上分别设有正负极,且与所述倒装焊盘上的正负极一一对应。
6.根据权利要求5所述的六边形芯片平面级联显示屏,其特征在于,所述芯片为正六边形结构,所述正六边形的每边为8um。
7.根据权利要求5所述的六边形芯片平面级联显示屏,其特征在于,所述倒装焊盘上的正极为圆形,负极为正六边形。
8.根据权利要求5所述的六边形芯片平面级联显示屏,其特征在于,所述蓝绿光芯片结构从上到下依次为蓝宝石衬底层、缓冲层以及N型氮化镓层,所述N型氮化镓层下表面分别设有MQW有源层和N电极,所述MQW有源层下表面设有P型氮化镓层,所述P型氮化镓层下表面设有P电极,所述蓝宝石衬底层与所述缓冲层之间均匀设有若干圆锥体,所述N型氮化镓层与所述N电极之间设有金属凸点。
9.根据权利要求5所述的六边形芯片平面级联显示屏,其特征在于,所述红光芯片结构从上到下依次为砷化镓衬底层、缓冲层以及N型铝镓铟磷下限制层,所述N型铝镓铟磷下限制层下表面分别设有铝镓铟磷有源层和N电极,所述铝镓铟磷有源层下表面设有P型铝镓铟磷上限制层,所述P型铝镓铟磷上限制层下表面设有P电极,所述砷化镓衬底层与所述缓冲层之间均匀设有若干圆锥体,所述N型铝镓铟磷下限制层与所述N电极之间设有金属凸点。
10.根据权利要求8所述的六边形芯片平面级联显示屏,其特征在于,所述N电极与所述P电极的下表面位于同一水平线上。
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