CN109299629A - Semiconductor fingerprint sensor and preparation method thereof - Google Patents
Semiconductor fingerprint sensor and preparation method thereof Download PDFInfo
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- CN109299629A CN109299629A CN201710607099.5A CN201710607099A CN109299629A CN 109299629 A CN109299629 A CN 109299629A CN 201710607099 A CN201710607099 A CN 201710607099A CN 109299629 A CN109299629 A CN 109299629A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000010410 layer Substances 0.000 claims abstract description 381
- 239000002184 metal Substances 0.000 claims abstract description 122
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 238000002161 passivation Methods 0.000 claims abstract description 62
- 239000011241 protective layer Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims description 68
- 238000004519 manufacturing process Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 21
- 239000004642 Polyimide Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
The invention discloses a kind of semiconductor fingerprint sensor and preparation method thereof, a protective layer is directly covered on the top layer metallic layer by the first metal interconnecting layer structure in the pixel region of semiconductor fingerprint sensor.In this way; compared with prior art; in the pixel region for the semiconductor fingerprint sensor that the present invention is formed; just without passivation layer between first metal interconnecting layer structure and protective layer; then; just reduce the noise capacitor in semiconductor fingerprint sensor there is no capacitor caused by passivation layer in semiconductor fingerprint sensor, semiconductor fingerprint sensor performance can be improved.
Description
Technical field
The present invention relates to technical field of integrated circuits, in particular to a kind of semiconductor fingerprint sensor and preparation method thereof.
Background technique
For security purposes, many physiological characteristics of people can be used as personnel identity identification, these features such as fingerprint,
Retina, iris even face feature are partly led for these can distinguish the device of certain physiological characteristics of personnel identity
Body fingerprint sensor is widely used in many fields.
Semiconductor fingerprint sensor is referred to generally according to the capacitor formed between finger surface and fingerprint sensing panel
Line detection.Wherein, the pixel region of semiconductor fingerprint sensor, in the prior art, pixel region are distributed on fingerprint sensing panel
Domain generally includes metal interconnecting layer structure and the passivation layer (Passivation) that is sequentially located in metal interconnecting layer structure and protects
Sheath, the material of the passivation layer are the combination of silica and silicon nitride, and the material of the protective layer is polyimides
(Polyimide).The pixel region is for acquiring finger print information, specifically, passing through the capacitance of acquisition finger different zones
(the conductive metal layer composition of finger surface and metal interconnecting layer structure generates the up/down pole plate of effective capacitance value), and by capacitor
Value is converted to electric signal, can obtain finger print information according to electric signal.However, passivation layer and guarantor in metal interconnecting layer structure
Sheath can generate certain noise capacitor (C to the effective capacitance valueNiose=CPassvision+CPolyimide), the noise capacitor is half-and-half
Conductor fingerprint sensor performance generates adverse effect, therefore, it is necessary to provide a kind of new semiconductor fingerprint sensor and its system
Make method, to improve semiconductor fingerprint sensor performance.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of semiconductor fingerprint sensors and preparation method thereof, to improve
Semiconductor fingerprint sensor performance.
To solve above-mentioned technical problem and relevant issues, the production method packet of semiconductor fingerprint sensor provided by the invention
It includes:
A substrate is provided, the substrate includes pixel region；
One first metal interconnecting layer structure, the first metal interconnecting layer structure are formed on the pixel region of the substrate
Including at least a top layer metallic layer；
Protective layer is formed on the top layer metallic layer.
Optionally, in the step of forming the first metal interconnecting layer structure on the pixel region of the substrate further include:
The second metal interconnecting layer structure is formed in the substrate, second metal interconnecting layer is located in the logic region of the substrate,
The first metal interconnecting layer structure and the second metal interconnecting layer structure are located on the same floor and electrically isolate.
Optionally, the step of forming the first metal interconnecting layer structure and the second metal interconnecting layer structure on the substrate and
Between the step of forming protective layer on the top layer metallic layer, the production method of the semiconductor fingerprint sensor further include:
Passivation layer is formed in the first metal interconnecting layer structure and the second metal interconnecting layer structure；One is formed on the passivation layer
Photoresist pattern, the photoresist pattern expose the passivation layer in the first metal interconnecting layer structure；It is exposed described in removal
Passivation layer is to expose the first metal interconnecting layer structure；Remove the photoresist pattern.
Optionally, in the production method of the semiconductor fingerprint sensor, the passivation layer includes covering described the
The silicon dioxide layer and the nitrogen in the silicon dioxide layer of one metal interconnecting layer structure and the second metal interconnecting layer structure
SiClx layer.
Further, in the production method of the semiconductor fingerprint sensor, the thickness of the protective layer is greater than institute
State the thickness of passivation layer.
Optionally, the step of forming the first metal interconnecting layer structure on the pixel region of the substrate and in the top layer
Between the step of forming protective layer on metal layer, the production method of the semiconductor fingerprint sensor further include: etching described the
Top layer metallic layer in one metal interconnecting layer structure makes the top layer metallic layer at least partially deviate from the surface of the substrate
Non-planar surfaces.
Optionally, in the production method of the semiconductor fingerprint sensor, using the first metal described in wet etching
Top layer metallic layer in interconnection layer structure.
Optionally, it in the production method of the semiconductor fingerprint sensor, is gone in the wet etching using photoresist
Except the conjugate solutions of agent and isopropanol.
Optionally, in the production method of the semiconductor fingerprint sensor, the non-planar surfaces are concave surface, convex surface
Or male and fomale(M&F).
Optionally, in the production method of the semiconductor fingerprint sensor, the concave surface, convex surface section be triangle
Shape or arc, the male and fomale(M&F) is staggeredly connected by the concave surface, the convex surface to be formed.
Correspondingly, another side according to the present invention, the present invention also provides a kind of semiconductor fingerprint sensors, comprising:
One substrate, including pixel region；
One first metal interconnecting layer structure, the first metal interconnecting layer structure are located on the pixel region of the substrate,
And the first metal interconnecting layer structure includes at least a top layer metallic layer；
One protective layer, the protective layer are located on the first metal interconnecting layer structure, and with the top layer metallic layer
Contact.
Further, the substrate further includes a logic region, and the second metal is formed on the logic region of the substrate
Interconnection layer structure, the second metal interconnecting layer structure and the first metal interconnecting layer structure be located on the same floor and electrically every
From.
It optionally, further include one in the semiconductor fingerprint sensor on the second metal interconnecting layer structure
Passivation layer.
Optionally, in the semiconductor fingerprint sensor, the passivation layer includes covering the second metal interconnection
The silicon dioxide layer of layer structure and the silicon nitride layer in the silicon dioxide layer.
Optionally, in the semiconductor fingerprint sensor, the thickness of the protective layer is greater than the thickness of the passivation layer
Degree.
Optionally, in the semiconductor fingerprint sensor, the top layer metallic layer at least partially deviates from the base
The surface at bottom is non-planar surfaces.
Optionally, in the semiconductor fingerprint sensor, the non-planar surfaces are concave surface, convex surface or male and fomale(M&F).
Optionally, in the semiconductor fingerprint sensor, the concave surface, convex surface section be triangle or arc,
The male and fomale(M&F) is staggeredly connected by the concave surface, the convex surface to be formed.
Compared with prior art, the invention has the following advantages:
The top that the present invention passes through the first metal interconnecting layer structure in the pixel region of the semiconductor fingerprint sensor
A protective layer is directly covered on layer metal layer.In this way, compared with prior art, the semiconductor fingerprint sensor that the present invention is formed
In pixel region, just without passivation layer between the first metal interconnecting layer structure and protective layer, then, sensed in semiconductor fingerprint
Just there is no capacitor C caused by passivation layer in devicepassvision, that is, reduce the noise capacitor in semiconductor fingerprint sensor,
Semiconductor fingerprint sensor performance can be improved.
Further, the thickness of the protective layer of the invention is greater than the thickness of the passivation layer, increases the protective layer
Thickness can reduce capacitor C caused by the protective layerPolyimide, that is, further reduce in semiconductor fingerprint sensor
Noise capacitor, to improve semiconductor fingerprint sensor performance.
Further, the step of forming the first metal interconnecting layer structure on the substrate and in the top layer metallic layer
Between the step of upper formation protective layer, the production method of the semiconductor fingerprint sensor further include: etching first metal
Top layer metallic layer in interconnection layer structure keeps the top layer metallic layer at least partially non-planar away from the surface of the substrate
Surface, the non-planar surfaces are concave surface, convex surface or male and fomale(M&F).Top layer metallic layer with non-planar surfaces increases its surface
Conductive area be more conducive to improving semiconductor fingerprint sensing to increase the effective capacitance value of semiconductor fingerprint sensor
Device performance.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the production method of semiconductor fingerprint sensor；
Fig. 2 to Fig. 4 is the corresponding structural schematic diagram of step each in the production method of semiconductor fingerprint sensor；
Fig. 5 is the flow chart of the production method of semiconductor fingerprint sensor in the embodiment of the present invention；
Fig. 6 to Figure 11 is the corresponding structure of each step in the production method of semiconductor fingerprint sensor in the embodiment of the present invention
Schematic diagram.
Specific embodiment
Wherein Fig. 1 is a kind of flow chart of the production method of semiconductor fingerprint sensor referring to FIG. 1 to FIG. 4, and Fig. 2 is extremely
Fig. 4 is the corresponding structural schematic diagram of step each in the production method of the semiconductor fingerprint sensor.As shown in Figure 1, firstly, executing
Step S11, provides a substrate, and the substrate 10 includes semiconductor substrate and what is formed on a semiconductor substrate partly lead accordingly
Body structure, such as the material of the semiconductor substrate can be silicon, germanium, silicon-on-insulator (SOI), the semiconductor structure can be with
But it is not limited to include source electrode, grid, drain electrode etc.；Also, what those of ordinary skill in the art were known, semiconductor fingerprint sensor
In generally include pixel region and logic region, then the substrate 10 is divided for two large divisions, and first part I is pixel region, the
Two part II are logic region, the pixel region and logic region electrically isolate (such as can by fleet plough groove isolation structure into
Row electrically isolates, and schematic diagram omits in figure), as shown in Figure 2.
Then, in order to draw the electrical property of the semiconductor structure in the substrate 10, step S12 is executed, in the substrate
Upper formation metal interconnecting layer structure, the metal interconnecting layer structure include the first metal interconnecting layer structure and the second metal interconnecting layer
Structure, the first metal interconnecting layer structure are located in the pixel region of the semiconductor fingerprint sensor, second metal
Interconnection layer structure is located in the logic region of the semiconductor fingerprint sensor, the first metal interconnecting layer structure and the second gold medal
Belong to interconnection layer structure to be located on the same floor and electrically isolate.As shown in Fig. 2, forming first on the first part I of the substrate 10
Metal interconnecting layer structure forms the second metal interconnecting layer structure, first metal on the second part II of the substrate 10
Interconnection layer structure and the second metal interconnecting layer structure are located on the same floor and electrically isolate.It should be noted that only illustrating in Fig. 2
The top layer metallic layer in metal interconnecting layer structure is gone out, that is, lower metal interconnection layer structure, top layer dielectric layer and phase is omitted
Close through-hole structural schematic diagram, these be all those of ordinary skill in the art will appreciate that, no details will be provided herein.Such as
Fig. 2 illustrates the first top layer metallic layer being formed in the upper first metal interconnecting layer structure of first part I of the substrate 10
110, the second top layer metallic layer 111 in the second metal interconnecting layer structure on the second part II of the substrate 10 is described
First top layer metallic layer 110 and the second top layer metallic layer 111 are located on the same floor and electrically isolate and (be formed with groove between the two
A, as shown in Figure 2), the specific forming process of first top layer metallic layer 110 and the second top layer metallic layer 111 can with but it is unlimited
First top layer is then obtained by lithography and etching technique in the top layer metallic layer for the one covering substrate 10 of formation
Metal layer 110 and the second top layer metallic layer 111.
Next, executing step S13, a passivation layer is formed, the passivation layer covers the first metal interconnecting layer structure
With the second metal interconnecting layer structure.As shown in figure 3, in the table of first top layer metallic layer 110 and the second top layer metallic layer 111
Face covers a passivation layer 12, in general, the passivation layer 12 is the combination layer of silicon dioxide layer 120 and silicon nitride layer 121, meanwhile,
Silicon dioxide layer 120 can fill the groove A, and the thickness of the passivation layer 12 is about in 3um between 4um.
Then, step S14 is executed, a protective layer is formed, the protective layer covers the passivation layer in the pixel region.Such as
Shown in Fig. 4, protective layer only is formed on the passivation layer 12 in the pixel region (on the first part I of the i.e. described substrate 10)
13, in general, the material of the protective layer 13 is polyimides (Polyimide).
Inventors discovered through research that the semiconductor fingerprint sensor obtained by above-mentioned production method, with finger watch
When forming capacitor between face, passivation layer 12 and protective layer 13 on first top layer metallic layer 110 can generate certain noise
Capacitor (i.e. CNiose=CPassvision+CPolyimide), which generates bad shadow to the performance of semiconductor fingerprint sensor
It rings, leads to semiconductor fingerprint sensor poor performance.
Based on the studies above and discovery, a kind of production method that the present invention proposes new semiconductor fingerprint sensor, comprising:
Step S21, a substrate is provided, the substrate includes pixel region；
Step S22, one first metal interconnecting layer structure is formed on the pixel region of the substrate, first metal is mutual
Even layer structure includes at least a top layer metallic layer；
Step S23, protective layer is formed on the top layer metallic layer.
Correspondingly, another side according to the present invention, the present invention also provides a kind of semiconductor fingerprint sensors, comprising:
One substrate, including pixel region；
One first metal interconnecting layer structure, the first metal interconnecting layer structure are located on the pixel region of the substrate,
And the first metal interconnecting layer structure includes at least a top layer metallic layer；
One protective layer, the protective layer are located on the first metal interconnecting layer structure, and with the top layer metallic layer
Contact.
The top that the present invention passes through the first metal interconnecting layer structure in the pixel region of the semiconductor fingerprint sensor
A protective layer is directly covered on layer metal layer.In this way, compared with prior art, the semiconductor fingerprint sensor that the present invention is formed
In pixel region, just without passivation layer between the first metal interconnecting layer structure and protective layer, then, sensed in semiconductor fingerprint
Just there is no capacitor C caused by passivation layer in devicePassvision, that is, reduce the noise capacitor in semiconductor fingerprint sensor,
Semiconductor fingerprint sensor performance can be improved.
Semiconductor fingerprint sensor of the invention and preparation method thereof is carried out more below in conjunction with flow chart and schematic diagram
Detailed description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify and retouch herein
The present invention stated, and still realize advantageous effects of the invention.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
It is exemplified below the embodiment of described semiconductor fingerprint sensor and preparation method thereof, clearly to illustrate in of the invention
Hold, it is understood that, the contents of the present invention are not restricted to following embodiment, other to pass through those of ordinary skill in the art's
The improvement of conventional technical means is also within thought range of the invention.
Fig. 5 to Figure 11 is please referred to, wherein figure 5 show the production methods of semiconductor fingerprint sensor in the embodiment of the present invention
Flow chart, it is corresponding that Fig. 6 to Figure 11 shows in the embodiment of the present invention each step in the production method of semiconductor fingerprint sensor
Structural schematic diagram.
As shown in figure 5, firstly, execution step S21, provides a substrate, as shown in fig. 6, the substrate 20 includes semiconductor
Substrate and the corresponding semiconductor structure formed on a semiconductor substrate, such as the semiconductor substrate material can for silicon,
Germanium, silicon-on-insulator (SOI) etc., the semiconductor structure can be, but not limited to include source electrode, grid, drain electrode etc., not do herein
It limits.Also, what those of ordinary skill in the art were known, pixel region and logic are generally included in semiconductor fingerprint sensor
Region, then the substrate 20 is divided for two large divisions, and the first part I of the substrate 20 is pixel region, and the of the substrate 20
Two part II are logic region, the pixel region and logic region electrically isolate (such as can by fleet plough groove isolation structure into
Row electrically isolates, and schematic diagram omits in figure), as shown in Figure 6.
Then, in order to draw the electrical property of the semiconductor structure in the substrate 20, step S22 is executed, in the substrate
The first metal interconnecting layer structure of upper formation, the first metal interconnecting layer structure are located at the pixel of the semiconductor fingerprint sensor
In region, the pixel region is for acquiring finger print information, and first metal interconnection structure includes at least one first top layer
Metal layer.Detailed, in actual process, the semiconductor fingerprint sensor includes pixel region and logic region, wherein patrolling
Volume region includes the second metal interconnecting layer structure, therefore, in the present embodiment, the is formed on the first part I of the substrate 20
It further include that the second metal interconnecting layer structure is formed on the second part II of the substrate 20 while one metal interconnecting layer structure
(the i.e. described second metal interconnecting layer structure is located in the logic region of the semiconductor fingerprint sensor), first metal is mutual
Even layer structure is located on the same floor and electrically isolates with the second metal interconnecting layer structure.It should be noted that only being illustrated in Fig. 6
The second top-level metallic in the first top layer metallic layer 210 and the second metal interconnecting layer structure in first metal interconnecting layer structure
Layer 211, that is, be omitted the structural schematic diagram of lower metal interconnection layer structure, top layer dielectric layer and associated through-holes, these are all
Those of ordinary skill in the art will appreciate that, no details will be provided herein.Fig. 6 illustrate be formed in as described in substrate 20
The upper first metal interconnecting layer structure of first part I in the first top layer metallic layer 210, in the second part II of the substrate 20
On the second metal interconnecting layer structure in the second top layer metallic layer 211, first top layer metallic layer 210 and the second top layer gold
Belong to layer 211 to be located on the same floor and electrically isolate and (be formed with groove B between the two, as shown in Figure 6).First top-level metallic
The specific forming process of layer 210 and the second top layer metallic layer 211 can be, but not limited to form the top of a covering substrate 20
Then layer metal layer obtains first top layer metallic layer 210 and the second top layer metallic layer 211 by lithography and etching technique.
Next, before the step of formation one covers the protective layer of first top layer metallic layer, being in the present embodiment
The dependency structure of the protection logic region, can be initially formed the passivation layer of a covering the second metal interconnecting layer structure.Tool
Body, in the present embodiment, as shown in fig. 7, the passivation layer covers first metal interconnecting layer firstly, forming a passivation layer
Structure and the second metal interconnecting layer structure, i.e. the surface shape in first top layer metallic layer 210 and the second top layer metallic layer 211
At passivation layer 22.Preferably, the passivation layer 22 is the combination layer of silicon dioxide layer 220 and silicon nitride layer 221, meanwhile, dioxy
SiClx layer 220 can fill the groove B, the thickness of the passivation layer 22 about 3um between 4um (the i.e. described passivation layer 22
Thickness is equal with the thickness of passivation layer 12 mentioned above)；
Then, referring to Fig. 8, forming a photoresist pattern on the passivation layer, the photoresist pattern exposes described
Passivation layer on one top layer metallic layer.Preferably, first coating a photoresist layer on the passivation layer 22, pass through the shape that exposes, develops
At the photoresist pattern 23, the photoresist pattern 23 exposes the passivation layer on first top layer metallic layer 210.The present embodiment
What the photoetching process that the middle formation photoresist pattern 23 can be known by those of ordinary skill in the art obtained, the photoresist
The layer photoresist that can both be positive may be negative photoresist (such as polyimide), be not limited thereto；
Then, using the photoresist pattern as mask, the passivation layer exposed described in removal is to expose the first top layer gold
Belong to layer.As shown in Figure 9, it is preferred that using described in the passivation layer and exposing exposed described in dry etching removal in the present embodiment
First top layer metallic layer 210 retains (including second top layer gold of passivation layer 22 ' for covering second top layer metallic layer 211
Belong to the silicon dioxide layer 220 ' and silicon nitride layer 221 ' on layer 211), finally remove the photoresist pattern.
After having executed above-mentioned steps, in order to further increase the semiconductor fingerprint sensor performance, in the present embodiment,
It, will also be to first top layer metallic layer 210 before the step of forming the protective layer of covering first top layer metallic layer
Surface performs corresponding processing, to increase the surface area of the first top layer metallic layer 210.Preferably, in the present embodiment, such as Figure 10
It is shown, first top layer metallic layer 210 is etched, makes first top layer metallic layer 210 ' at least part away from the substrate
20 surface is non-planar surfaces.Preferably, using the first top layer metallic layer 210 described in wet etching, in the wet etching
It can be, but not limited to select EKC solution (conjugate solutions that EKC solution is photoresist remover EKC-265 and isopropanol IPA)；It is preferred that
, the non-planar surfaces are concave surface, convex surface or male and fomale(M&F), the concave surface, convex surface section including but not limited to triangle or
Arc, the male and fomale(M&F) is staggeredly connected by the concave surface, the convex surface to be formed.It is furthermore preferred that in order to make the first top layer metallic layer
210 ' Maximizing surface area, in the present embodiment, the non-planar surfaces are hemispherical, and as shown in Figure 10 having is in hemisphere
First top layer metallic layer 210 ' of the concave surface of shape, because the surface conductance area of first top layer metallic layer 210 ' maximizes, from
And increase the effective capacitance value of semiconductor fingerprint sensor, be conducive to improve semiconductor fingerprint sensor performance.
Next, executing step S23, the protective layer of covering the first metal interconnecting layer structure is formed.The present embodiment
In, as shown in figure 11, a protective layer 24 is above formed in the first top layer metallic layer 210 ' with hemispherical concave surface, preferably
, the material of the protective layer 24 is polyimides (Polyimide), moreover, the thickness of the protective layer 24 is greater than described blunt
The thickness for changing layer 22, under the premise of the thickness of the entire pixel region of maintenance is constant, the thickness of the protective layer 24 is compared to above
The thickness for the protective layer 13 mentioned increases the thickness (or thickness of passivation layer mentioned above 12) of the about described passivation layer 22.
The detailed process for forming the protective layer 24 can be, but not limited to include first coating a polyimide layer, the polyamides
Imine layer covers first top layer metallic layer 210 ' and passivation layer 22 '；Then covering institute is obtained by lithography and etching technique
State the protective layer 24 of the first top layer metallic layer 210 '；It certainly, further include that cured technique is carried out to the protective layer 24, these are all
Be it will be appreciated by those skilled in the art that, this will not be repeated here.It should be noted that solidifying to the protective layer 24
During, the protective layer 24 can be densified more, and in the present embodiment, the thickness of the protective layer 24 can at least be thickened
1.5um to 2um thickens because the thickness of the protective layer 24 is opposite, therefore, can reduce capacitor caused by the protective layer 24
CPolyimide, that is, the noise capacitor in semiconductor fingerprint sensor is further reduced, to improve semiconductor fingerprint sensor
Energy.
Therefore, it please refers to shown in Figure 11, includes: a substrate by the semiconductor fingerprint sensor that above-mentioned production method obtains
20；One is located at the first metal interconnecting layer structure and the second metal interconnecting layer structure in the substrate 20, the first metal interconnection
Layer structure and the second metal interconnecting layer structure are located on the same floor and electrically isolate, and the in the first metal interconnecting layer structure
One top layer metallic layer 210 ' has hemispherical concave surface；The protective layer 24 of one covering first top layer metallic layer 210 '；With
And one covering second top layer metallic layer 211 passivation layer 22 ', and the thickness of the protective layer 24 is greater than the passivation layer
22 ' thickness.Obviously, the semiconductor fingerprint sensor of the invention is not limited to be made by above-mentioned production method.
Then, in the present embodiment, between the first top layer metallic layer 210 ' in the pixel region and protective layer 24 not only
Without passivation layer, reduce noise capacitor caused by passivation layer；It is thickened moreover, the thickness of the protective layer 24 is opposite,
Consequently reduce capacitor caused by the protective layer 24；Further, the surface of first top layer metallic layer 210 '
With non-planar surfaces, so that the surface area of first top layer metallic layer 210 ' is maximum, that is, leading for pixel region is maximized
Electric metal area is correspondingly improved the effective capacitance value of semiconductor fingerprint sensor, then semiconductor fingerprint sensor performance obtains
It greatly improves.
To sum up, the present invention passes through the first metal interconnecting layer structure in the pixel region of the semiconductor fingerprint sensor
Top layer metallic layer on directly cover a protective layer.In this way, compared with prior art, the semiconductor fingerprint sensing that the present invention is formed
In the pixel region of device, just without passivation layer between the first metal interconnecting layer structure and protective layer, then, in semiconductor fingerprint
Just there is no capacitor C caused by passivation layer in sensorPassvision, that is, reduce the noise electricity in semiconductor fingerprint sensor
Hold, semiconductor fingerprint sensor performance can be improved.
Further, the thickness of the protective layer of the invention is greater than the thickness of the passivation layer, increases the protective layer
Thickness can reduce capacitor C caused by the protective layerPolyimide, that is, further reduce in semiconductor fingerprint sensor
Noise capacitor, to improve semiconductor fingerprint sensor performance.
Further, the step of forming the first metal interconnecting layer structure on the substrate and in the top-level metallic
Between the step of forming protective layer on layer, the production method of the semiconductor fingerprint sensor further include: etching first gold medal
Belong to the top layer metallic layer in interconnection layer structure, keeps the top layer metallic layer at least partially non-flat away from the surface of the substrate
Face surface, the non-planar surfaces are concave surface, convex surface or male and fomale(M&F).Top layer metallic layer with non-planar surfaces increases its table
The conductive area in face is more conducive to improving semiconductor fingerprint biography to increase the effective capacitance value of semiconductor fingerprint sensor
Sensor performance.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (18)
1. a kind of production method of semiconductor fingerprint sensor characterized by comprising
A substrate is provided, the substrate includes pixel region；
One first metal interconnecting layer structure is formed on the pixel region of the substrate, the first metal interconnecting layer structure is at least
Including a top layer metallic layer；
Protective layer is formed on the top layer metallic layer.
2. the production method of semiconductor fingerprint sensor as described in claim 1, which is characterized in that in the pixel of the substrate
In the step of forming the first metal interconnecting layer structure on region further include: form the second metal interconnecting layer knot on the substrate
Structure, second metal interconnecting layer are located in the logic region of the substrate, the first metal interconnecting layer structure and the second gold medal
Belong to interconnection layer structure to be located on the same floor and electrically isolate.
3. the production method of semiconductor fingerprint sensor as claimed in claim 2, which is characterized in that formed on the substrate
The step of first metal interconnecting layer structure and the second metal interconnecting layer structure and the formation protective layer on the top layer metallic layer
Between step, the production method of the semiconductor fingerprint sensor further include:
Passivation layer is formed in the first metal interconnecting layer structure and the second metal interconnecting layer structure；
A photoresist pattern is formed on the passivation layer, the photoresist pattern exposes in the first metal interconnecting layer structure
Passivation layer；
Using the photoresist pattern as mask, the passivation layer exposed described in removal is to expose the first metal interconnecting layer structure；
Remove the photoresist pattern.
4. the production method of semiconductor fingerprint sensor as claimed in claim 3, which is characterized in that the passivation layer includes covering
It covers the silicon dioxide layer of the first metal interconnecting layer structure and the second metal interconnecting layer structure and is located at the silica
Silicon nitride layer on layer.
5. the production method of semiconductor fingerprint sensor as claimed in claim 3, which is characterized in that the thickness of the protective layer
Greater than the thickness of the passivation layer.
6. the production method of the semiconductor fingerprint sensor as described in claim 1 to 5 any one, which is characterized in that in institute
It states the step of forming the first metal interconnecting layer structure on the pixel region of substrate and forms protective layer on the top layer metallic layer
The step of between, the production method of the semiconductor fingerprint sensor further include: in etching the first metal interconnecting layer structure
Top layer metallic layer, make the top layer metallic layer at least partially deviate from the substrate surface non-planar surfaces.
7. the production method of semiconductor fingerprint sensor as claimed in claim 6, which is characterized in that using described in wet etching
Top layer metallic layer in first metal interconnecting layer structure.
8. the production method of semiconductor fingerprint sensor as claimed in claim 7, which is characterized in that adopted in the wet etching
With the conjugate solutions of light resist removing agent and isopropanol.
9. the production method of semiconductor fingerprint sensor as claimed in claim 6, which is characterized in that the non-planar surfaces are
Concave surface, convex surface or male and fomale(M&F).
10. the production method of semiconductor fingerprint sensor as claimed in claim 9, which is characterized in that the concave surface, convex surface
Section is triangle or arc, and the male and fomale(M&F) is staggeredly connected by the concave surface, the convex surface to be formed.
11. a kind of semiconductor fingerprint sensor characterized by comprising
One substrate, including pixel region；
One first metal interconnecting layer structure, the first metal interconnecting layer structure is located on the pixel region of the substrate, and institute
The first metal interconnecting layer structure is stated including at least a top layer metallic layer；
One protective layer, the protective layer is located on the first metal interconnecting layer structure, and contacts with the top layer metallic layer.
12. semiconductor fingerprint sensor as claimed in claim 11, which is characterized in that the substrate further includes a logic area
Domain, is formed with the second metal interconnecting layer structure on the logic region of the substrate, the second metal interconnecting layer structure with it is described
First metal interconnecting layer structure is located on the same floor and electrically isolates.
13. semiconductor fingerprint sensor as claimed in claim 12, which is characterized in that in the semiconductor fingerprint sensor also
The passivation layer being located on the second metal interconnecting layer structure including one.
14. semiconductor fingerprint sensor as claimed in claim 13, which is characterized in that the passivation layer includes covering described the
The silicon dioxide layer of two metal interconnecting layer structures and the silicon nitride layer in the silicon dioxide layer.
15. semiconductor fingerprint sensor as claimed in claim 13, which is characterized in that the thickness of the protective layer is greater than described
The thickness of passivation layer.
16. the semiconductor fingerprint sensor as described in claim 11 to 15 any one, which is characterized in that the top-level metallic
Layer at least part is non-planar surfaces away from the surface of the substrate.
17. semiconductor fingerprint sensor as claimed in claim 16, which is characterized in that the non-planar surfaces are concave surface, convex
Face or male and fomale(M&F).
18. semiconductor fingerprint sensor as claimed in claim 17, which is characterized in that the concave surface, convex surface section be three
Angular or arc, the male and fomale(M&F) is staggeredly connected by the concave surface, the convex surface to be formed.
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