CN109287131A - 光电模块组件和制造方法 - Google Patents

光电模块组件和制造方法 Download PDF

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CN109287131A
CN109287131A CN201780027639.0A CN201780027639A CN109287131A CN 109287131 A CN109287131 A CN 109287131A CN 201780027639 A CN201780027639 A CN 201780027639A CN 109287131 A CN109287131 A CN 109287131A
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substrate
assembly
photovoltaic module
optical
installation
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马丁·卢卡斯·巴丽曼
马蒂亚斯·葛鲁尔
菲利普·布希尤
尤卡·阿拉西尼奥
哈特穆特·拉德曼
尼古拉·斯普林
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Ams Sensors Singapore Pte Ltd
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Heptagon Micro Optics Pte Ltd
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Abstract

一种光电模块组件,所述光电模块组件包括光电模块。所述模块包括:有源光电部件,所述有源光电部件在安装衬底中或上;光学子组件;以及间隔件,所述间隔件安置在所述安装衬底与所述光学子组件之间,以便在所述有源光电部件与所述光学子组件之间形成特定距离。所述光电模块组件还包括凹陷衬底,所述凹陷衬底包括第一表面和第二表面,其中所述第二表面在平面中比所述第一表面更接近所述光学子组件。所述光电模块安装在所述第一表面上。所述第二表面用于安装其他部件。

Description

光电模块组件和制造方法
相关申请的交叉引用
本申请要求在2017年3月23日提交的美国临时专利申请NO.62/312,026的优先权权利。先前申请的内容以全文引用的方式并入本文中。
技术领域
本公开涉及光电模块组件和用于制造这些组件的方法。
背景技术
包括光学辐射发射器和/或光学传感器的光电模块能够用于广泛范围的应用中,所述应用包括例如距离测量、接近感测、手势感测以及成像。在一些应用中,此类光电模块包括在各种消费型电子装置的外壳中,所述消费型电子装置例如移动计算装置(例如,平板和个人数字助理(PDA)、智能手机)和其他装置。
然而,空间在模块将集成到的这类装置中常常非常珍贵。这个问题对于例如智能手机制造商以及空间非常珍贵的其他电子设备和系统的制造商来说特别重要。因此,希望提供紧凑的并且相对容易制造的模块。
发明内容
本公开描述了光电模块组件,和用于制造此类组件的方法。
在一些例子中,所述方法能够促进光电模块的制造,所述光电模块具有电接点以准许对光电装置的主动对准。所述方法还能够促进组件的制造,所述组件合并所述光电模块并且具有相对小的z高度。
在一个方面,例如,本公开描述了一种光电模块组件,所述光电模块组件包括光电模块。所述模块包括:有源光电部件,所述有源光电部件在安装衬底中或上;光学子组件;以及间隔件,所述间隔件安置在所述安装衬底与所述光学子组件之间,以便在所述有源光电部件与所述光学子组件之间形成特定距离。所述光电模块组件还包括凹陷衬底,所述凹陷衬底包括第一表面和第二表面,其中所述第二表面在平面中比所述第一表面更接近所述光学子组件。所述光电模块安装在所述第一表面上。所述第二表面用于安装其他部件。
一些实现方式包括以下特征中的一个或多个特征。例如,所述凹陷衬底能够包括第一部分和第二部分,所述凹陷衬底的所述第二部分由热导率比所述第一部分高的材料构成。所述第二部分的表面充当所述有源光电部件安装所在的所述第一表面。所述第一部分安置在所述第二部分上,但是不覆盖所述第一表面。
在一些情况下,所述凹陷衬底的所述第一部分包括印制电路板。
在一些例子中,所述凹陷衬底的所述第二部分由金属或陶瓷材料构成。在一些实现方式中,所述凹陷衬底的所述第二部分至少部分地由导电材料构成。
所述光电模块组件能够包括所述安装衬底的第一表面上的第一电接点,以及安置在所述安装衬底的第二对置表面上的第二电接点,其中所述安装衬底的所述第二表面比所述安装衬底的所述第一表面更接近所述凹陷衬底的所述第一表面。
在一些实现方式中,填充物材料安置在所述安装衬底的所述第二表面与所述凹陷衬底的所述第一表面之间。所述填充物材料优选地具有良好热导率和/或良好热容量。此外,在一些例子中,电绝缘材料基本上填充所述凹陷衬底的所述第二部分与所述安装衬底之间的空间。
所述间隔件能够包括电绝缘安装突起,所述电绝缘安装突起突出超出所述安装衬底,其中所述安装突起通过黏合剂附接到所述凹陷衬底的所述第一表面。在一些例子中,所述间隔件包括与所述有源光电部件接触的对准突起。
本公开还描述了一种光电模块,所述光电模块包括:有源光电部件,所述有源光电部件在安装衬底中或上;光学子组件;以及间隔件。所述安装衬底具有第一表面并且具有在与所述第一表面对置的侧上的第二表面。所述间隔件安置在所述安装衬底与所述光学子组件之间,以便在所述有源光电部件与所述光学子组件之间形成特定距离。第一电接点安置在所述安装衬底的所述第一表面上,并且第二电接点安置在所述安装衬底的所述第二表面上。
根据又一方面,本公开描述了一种用于制造光电模块组件的方法。所述方法包括建立到处于安装衬底的第一侧中或上的有源光电部件的电接触,其中通过所述安装衬底的第二侧上的与所述第一侧的电接点对置的电接点来建立所述电接触。所述方法还包括执行主动对准以使光学子组件与所述有源光电部件基本上对准,其中所述主动对准是在保持到所述有源光电部件的所述电接触的同时执行。在衬底的凹陷区域上安装所述光电组件,并且通过所述安装衬底的所述第一侧上的电接点来建立到所述有源光电部件的电接触。
其他方面、特征以及优点将从以下详细描述、附图以及权利要求显而易见。
附图说明
图1A至1E图示了在光电模块组件的制造期间的各种阶段。
图2、3和4图示了光电模块组件的实例。
图5A至5B图示了光电模块组件的另一实例。
图5C图示了图5A至5B的光电模块组件的一部分。
具体实施方式
本公开描述了一种方法,所述方法能够促进光电模块的制造,所述光电模块具有准许对光电装置的主动对准的电接点。所述方法还能够促进组件的制造,所述组件合并所述光电模块并且具有相对小的z高度。
图1A至图1E根据一些实现方式图示了光电模块组件的制造中的各种阶段的实例。特别地,图1A至图1C图示了光电模块的制造中的多个阶段,而图1D至图1E图示了所述模块到组件中的集成。
如图1A所示,有源光电装置10安装在安装衬底12的第一表面上,所述装置例如具有导电接线的引线框、印制电路板(PCB)或陶瓷板。光电装置10能够实现为例如光学发射器芯片,例如发光二极管(LED)、红外(IR)LED、有机LED(OLED)、红外(IR)激光器、垂直腔面发射激光器(VCSEL),或其他光学辐射源。在其他例子中,光电装置10实现为例如光学传感器芯片,例如飞行时间(TOF)光学传感器芯片或其他图像传感器芯片(例如,CMOS或CCD图像传感器),所述芯片包括光敏感像素的阵列。安装衬底12的第二(底部)表面包括电接点(例如,焊盘)14,所述电接点通过安装衬底12中的接线电连接到光电装置10。
如图1A另外所示,间隔件16横向地围绕光电装置10。间隔件16充当所述模块的外侧壁并且在光电装置10与安置在光电装置10上方的光学子组件18之间形成规定距离(参见图1B)。所述间隔件还能够帮助在光电装置10与光学子组件18之间形成光学对准。能够例如通过真空注入或其他成型技术来形成间隔件16。
在一些例子中,安装衬底12的部分12A在横向上略超出间隔件16的外表面延伸。安装衬底12的这个部分12A能够具有在所述部分的表面上(即,在装置10安装所在的同一表面上)的电接点(焊盘)22。接点22能够用以例如在如下所述地将装置10集成到组件中之后确定到所述装置10的电接点。
接下来,如图1B所示,光学子组件18是使用例如胶水的黏合剂19附接到间隔件16的自由端。光学子组件18能够包括一个或多个无源光学元件,例如透镜。在使黏合剂固化或允许黏合剂硬化之前,机器人微型夹具20A、20B能够用以执行光学子组件18相对于装置10的主动对准。一个微型夹具20A将间隔件16保持在适当位置,同时第二夹具20B使所述光学子组件移动以实现恰当对准。为了促进所述主动对准,背面接点14能够用以向装置10供电、向装置10提供控制信号和/或从装置10接收输出信号。能够执行对准校正以提供x、y、z以及旋转方向上的恰当聚焦和对准。
在所述主动对准完成之后,黏合剂能够固化或被允许硬化,并且微型夹具20能够被移除。能够废除通过背面接点14的到装置10的电接触。在图1C中图示了所得模块24。在随后的制造阶段中,如下文所描述,模块24合并到光电模块组件中。
如图1D所示,模块24安装在凹陷衬底26上,所述凹陷衬底26具有处于两个不同高度的用于安装部件的表面。在所说明的实例中,凹陷衬底26包括附接到基本上平坦的第二部分28的基本上平坦的第一部分30,以使得第二部分28提供用于安装模块24的第一下部表面28A,并且第一部分30提供用于安装其他电子部件的第二较高表面30A。两个表面28A、30A基本上彼此平行。
例如,凹陷衬底26的第一部分30能够由例如FR4的PCB材料构成,FR4是分配给玻璃增强型环氧层叠片、管、杆以及PCB的等级代号,并且是由防火的具环氧树脂黏结剂的编织玻璃纤维织物构成的复合材料。此类PCB材料具有相对低的热导率(例如,在20℃下约0.25W/mK)。另一方面,优选地,凹陷衬底26的第二部分28具有良好热性质(即,比第一部分30高的热导率和/或热容量)以利于散热。因此,第二部分28能够由例如金属或陶瓷材料构成,并且在一些例子中为组件提供硬质壳体。作为一实例,在一些实现方式中,凹陷衬底26的第二部分28由铝(Al)(热导率为在20℃下约200W/m K)或铜(Cu)(热导率为在20℃下约400W/m K)构成的金属。在一些实现方式中,第二部分28是由氮化铝(AlN)(热导率为在20℃下80到200W/m)构成的陶瓷。其他材料也能够用于所述第二部分。
在所说明实例中,PCB 30具有凹部32,以使得模块24能够安装在直接在第二部分28上的凹部32内。因此,第一部分30(例如,PCB)不覆盖第二部分28的表面28A,模块24附接在所述表面28A中。通过将模块24直接安装在第二部分28上(例如,利用黏合剂)而不是安装在PCB 30上,组件的总体z高度能够减小。
接下来,如图1E所示,电连接件(例如,导电接线)34能够设置在安装衬底12上的电接点22与PCB 30上的电接点(例如,焊盘)36之间。在一些例子中,模块制造商制造如图1A至图1C中所图示的模块,而另一制造商将所述模块组装成如图1D至图1E中所图示的组件。在其他例子中,同一制造商可以执行如图1A至图1E中所图示的所有制造阶段。
在一些实现方式中,能够省略安装衬底12的装置侧上的电接点22。替代地,能够提供从安装衬底12的底面上的电接点14到凹陷衬底26的第二部分28的外部表面的电连接。在这些情形中,也可能省略安装衬底12的延伸超出间隔件16的外表面的部分12A。图2图示了此类实现方式的一实例。
如图1E和图2的实现方式中所说明,间隔件16稍微延伸超出安装衬底12的下部表面,以使得安装衬底12的下部表面与凹陷衬底26的第二部分28的上部表面之间存在空间。间隔件16能够有利地由电绝缘材料构成。在一些例子中,安装衬底12的下部表面与凹陷衬底26的第二部分28的上部表面之间的空间38能够基本上用材料来填充,所述材料电绝缘和/或具有相对高的热导率和/或热容量。
在一些例子中,安装衬底12直接搁置在凹陷衬底26的第二部分28上,如例如图3和4所示。
此外,如图5A至5C所示,在一些实现方式中,光电装置10能够实现为在衬底12本身中形成的基于半导体的发光或光敏元件40,而不是实现为安装在衬底12上的单独芯片。在所说明实例中,间隔件16包括对准突起16A,所述对准突起16A直接地(无需黏合剂)搁置在装置10的表面上。间隔件16还包括安装突起16B,所述安装突起16B(例如,通过黏合剂)附接到凹陷衬底26的第二部分28的表面。这种布置能够促进在发光或光敏元件40与光学子组件18的无源光学元件(例如,透镜)之间形成更精确距离。间隔件16还能够(例如通过黏合剂42)附接到PCB 30的表面30A。图5C图示了在间隔件16和光学子组件18被移除的情况下的光电模块组件的一部分,使得能够看到有源光电装置10搁置在PCB 30的凹陷开口32(在凹陷衬底26的第二部分28上)内。额外的电子部件44能够设置在PCB 30的表面30A上。
尽管已经描述了各种实施方案,但是在本公开的精神内,能够做出许多修改。此外,在一些例子中,结合不同实施方案所描述的特征能够包括在同一实现方式中。因此,其他实现方式在权利要求的范围内。

Claims (17)

1.一种光电模块组件,所述光电模块组件包括:
光电模块,所述光电模块包括:
有源光电部件,所述有源光电部件在安装衬底中或上,
光学子组件,以及
间隔件,所述间隔件安置在所述安装衬底与所述光学子组件之间,以便在所述有源光电部件与所述光学子组件之间形成特定距离;以及
凹陷衬底,所述凹陷衬底包括第一表面,所述光电模块安装在所述第一表面上,所述凹陷衬底还包括用于安装其他部件的第二表面,所述第二表面在平面中比所述第一表面更接近所述光学子组件。
2.如权利要求1所述的光电模块组件,其中所述凹陷衬底包括印制电路板和除所述印制电路板以外的第二部分,所述第二部分的表面充当所述第一表面,其中所述印制电路板安置在所述第二部分上,但是不覆盖所述第一表面。
3.如权利要求2所述的光电模块组件,其中所述凹陷衬底的所述第二部分由金属或陶瓷材料构成。
4.如权利要求2所述的光电模块组件,其中所述凹陷衬底的所述第二部分至少部分地由导电材料构成。
5.如权利要求1所述的光电模块组件,其中所述凹陷衬底包括第一部分和第二部分,所述凹陷衬底的所述第二部分由热导率高于所述第一部分的材料构成,其中所述第二部分的表面充当所述第一表面,并且其中所述第一部分安置在所述第二部分上,但是不覆盖所述第一表面。
6.如权利要求1所述的光电模块组件,所述光电模块组件还包括所述安装衬底的第一表面上的第一电接点;和安置在所述安装衬底的第二对置表面上的第二电接点,其中所述安装衬底的所述第二表面比所述安装衬底的所述第一表面更接近所述凹陷衬底的所述第一表面。
7.如权利要求6所述的光电模块组件,所述光电模块组件还包括填充物材料,所述填充物材料安置在所述安装衬底的所述第二表面与所述凹陷衬底的所述第一表面之间。
8.如权利要求7所述的光电模块组件,其中所述填充物材料具有良好热导率。
9.如权利要求7所述的光电模块组件,其中所述填充物材料具有良好热容量。
10.如权利要求2所述的光电模块组件,其中电绝缘材料基本上填充所述凹陷衬底的所述第二部分与所述安装衬底之间的空间。
11.如权利要求1所述的光电模块组件,其中所述间隔件包括电绝缘安装突起,所述电绝缘安装突起突出超出所述安装衬底,所述安装突起通过黏合剂附接到所述凹陷衬底的所述第一表面。
12.如权利要求11所述的光电模块组件,其中所述间隔件还包括与所述有源光电部件接触的对准突起。
13.如前述权利要求中任一项所述的光电模块组件,其中所述第一表面和所述第二表面彼此平行。
14.一种光电模块,所述光电模块包括:
有源光电部件,所述有源光电部件在安装衬底中或上,所述安装衬底具有第一表面并且具有在与所述第一表面对置的侧上的第二表面;
光学子组件;以及
间隔件,所述间隔件安置在所述安装衬底与所述光学子组件之间,以便在所述有源光电部件与所述光学子组件之间形成特定距离;
第一电接点,所述第一电接点安置在所述安装衬底的所述第一表面上;以及
第二电接点,所述第二电接点安置在所述安装衬底的所述第二表面上。
15.如权利要求14所述的光电模块,其中所述间隔件包括电绝缘突起,所述电绝缘突起在离开所述光学子组件的方向上突出超出所述安装衬底的所述第二表面。
16.如权利要求14所述的光电模块,其中所述安装衬底包括具有导电接线的引线框、印制电路板或陶瓷板。
17.一种用于制造光电模块组件的方法,所述方法包括:
建立到处于安装衬底的第一侧中或上的有源光电部件的电接触,其中通过所述安装衬底的第二侧上的与所述第一侧的电接点对置的电接点来建立所述电接触;
执行主动对准以使光学子组件与所述有源光电部件基本上对准,其中所述主动对准是在保持到所述有源光电部件的所述电接触的同时执行;
在衬底的凹陷区域上安装所述光电组件;以及
通过所述安装衬底的所述第一侧上的电接点来建立到所述有源光电部件的电接触。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050013562A1 (en) * 2003-07-17 2005-01-20 Naoki Tatehata Optical component and manufacture method of the same
US20060006486A1 (en) * 2004-06-10 2006-01-12 Byoung-Rim Seo Image sensor package and method of manufacturing the same
US20070117236A1 (en) * 2005-11-18 2007-05-24 Seiko Epson Corporation Method of manufacturing optical module
US20080111949A1 (en) * 2006-06-30 2008-05-15 Sony Corporation Backlight device, liquid crystal display device, and electronic apparatus
US8299589B2 (en) * 2010-07-26 2012-10-30 TDK Taiwan, Corp. Packaging device of image sensor
US20130023072A1 (en) * 2011-07-19 2013-01-24 Digitaloptics Corporation East Substrate For Integrated Modules

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7773836B2 (en) * 2005-12-14 2010-08-10 Luxtera, Inc. Integrated transceiver with lightpipe coupler
US7872686B2 (en) * 2004-02-20 2011-01-18 Flextronics International Usa, Inc. Integrated lens and chip assembly for a digital camera
GB2417826B (en) * 2004-09-16 2006-08-09 Kingpak Tech Inc Image sensor module structure
SG10201606075XA (en) 2011-08-10 2016-09-29 Heptagon Micro Optics Pte Ltd Opto-electronic module and method for manufacturing the same
US9640709B2 (en) 2013-09-10 2017-05-02 Heptagon Micro Optics Pte. Ltd. Compact opto-electronic modules and fabrication methods for such modules
KR102380064B1 (ko) * 2014-02-18 2022-03-28 에이엠에스 센서스 싱가포르 피티이. 리미티드. 초점 길이 조정 및/또는 기울기의 축소를 위한 고객 맞춤화 가능한 스페이서를 포함하는 광학 모듈, 및 광학 모듈의 제조
US9711552B2 (en) 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
US10651624B2 (en) 2016-01-11 2020-05-12 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules having features for improved alignment and reduced tilt

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050013562A1 (en) * 2003-07-17 2005-01-20 Naoki Tatehata Optical component and manufacture method of the same
US20060006486A1 (en) * 2004-06-10 2006-01-12 Byoung-Rim Seo Image sensor package and method of manufacturing the same
US20070117236A1 (en) * 2005-11-18 2007-05-24 Seiko Epson Corporation Method of manufacturing optical module
US20080111949A1 (en) * 2006-06-30 2008-05-15 Sony Corporation Backlight device, liquid crystal display device, and electronic apparatus
US8299589B2 (en) * 2010-07-26 2012-10-30 TDK Taiwan, Corp. Packaging device of image sensor
US20130023072A1 (en) * 2011-07-19 2013-01-24 Digitaloptics Corporation East Substrate For Integrated Modules

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US20190088801A1 (en) 2019-03-21
US11114573B2 (en) 2021-09-07
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CN109287131B (zh) 2022-07-19
WO2017164819A1 (en) 2017-09-28
US10566468B2 (en) 2020-02-18
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EP3446338A1 (en) 2019-02-27
TWI777947B (zh) 2022-09-21

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