CN109285933A - A kind of die-bonding method and terminal - Google Patents
A kind of die-bonding method and terminal Download PDFInfo
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- CN109285933A CN109285933A CN201811133318.1A CN201811133318A CN109285933A CN 109285933 A CN109285933 A CN 109285933A CN 201811133318 A CN201811133318 A CN 201811133318A CN 109285933 A CN109285933 A CN 109285933A
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 235000012431 wafers Nutrition 0.000 claims description 138
- 239000000463 material Substances 0.000 claims description 22
- 239000012528 membrane Substances 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 15
- 238000004590 computer program Methods 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims 2
- 238000004364 calculation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a kind of die-bonding method and terminal, method includes: the first image information of the wafer to be fixed of acquisition at least two respectively；It calculates separately to obtain the grid deviation of wafer to be fixed according to the first image information and wafer reference point to be fixed；It is adjusted according to the wafer to be fixed of the grid deviation of wafer to be fixed and die bond reference point at least two；At least two the second image information to die bond position is obtained respectively；It calculates separately according to second image information and to die bond position reference point to obtain the grid deviation to die bond position；It is adjusted according to grid deviation and die bond reference point at least two to die bond position to die bond position；By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in on die bond position.It is greatly improved die bond efficiency and die bond precision, is suitable for carrying out batch die bond to Mini LED.
Description
Technical field
The present invention relates to die bond technical field more particularly to a kind of die-bonding method and terminals.
Background technique
With the development of LED technology, Mini LED will be as the core of next-generation backlight technology, when using traditional die bond
When equipment carries out die bond to the wafer of Mini LED, die bond speed is slow, low efficiency, and aligning accuracy is low, it will serious shadow
Ring the use of later period Mini LED.
Summary of the invention
The technical problems to be solved by the present invention are: providing a kind of die-bonding method and terminal, it is greatly improved die bond efficiency
With die bond precision.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of die-bonding method, comprising:
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
According to the first image information and wafer reference point to be fixed calculate separately to obtain at least two described in solid
Determine the grid deviation of wafer；
According to the grid deviation and die bond reference point at least two of at least two wafer to be fixed to
Fixed wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position with
At least two wafer to be fixed is arranged in a one-to-one correspondence；
To solid described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation of brilliant position；
Described in grid deviation and die bond reference point at least two according at least two to die bond position to
Die bond position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond
On position.
Another technical solution of the present invention are as follows:
A kind of die bond terminal can be run on a memory and on a processor including processor, memory and storage
Computer program,
The processor performs the steps of when executing the computer program
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
According to the first image information and wafer reference point to be fixed calculate separately to obtain at least two described in solid
Determine the grid deviation of wafer；
According to the grid deviation and die bond reference point at least two of at least two wafer to be fixed to
Fixed wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position with
At least two wafer to be fixed is arranged in a one-to-one correspondence；
To solid described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation of brilliant position；
Described in grid deviation and die bond reference point at least two according at least two to die bond position to
Die bond position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond
On position.
The beneficial effects of the present invention are: grid deviation is carried out to each wafer to be fixed and to die bond position respectively
It calculates, is then adjusted correspondingly, be conducive to improve die bond precision；Simultaneously by multiple wafers to be fixed be fixed on it is multiple to
On die bond position, die bond is high-efficient.Die-bonding method and terminal of the invention is suitable for carrying out die bond to Mini LED.
Detailed description of the invention
Fig. 1 is the flow chart of the die-bonding method of the embodiment of the present invention one；
Fig. 2 is the structural schematic diagram of the die bond terminal of the embodiment of the present invention two.
Label declaration:
100, die bond terminal；1, processor；2, memory.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained.
The most critical design of the present invention is: being adjusted to each wafer to be fixed and to die bond position, then will
Multiple wafers to be fixed are also secured to multiple to be greatly improved die bond efficiency and die bond precision on die bond position.
Please refer to Fig. 1, a kind of die-bonding method, comprising:
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
According to the first image information and wafer reference point to be fixed calculate separately to obtain at least two described in solid
Determine the grid deviation of wafer；
According to the grid deviation and die bond reference point at least two of at least two wafer to be fixed to
Fixed wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position with
At least two wafer to be fixed is arranged in a one-to-one correspondence；
To solid described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation of brilliant position；
Described in grid deviation and die bond reference point at least two according at least two to die bond position to
Die bond position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond
On position.
As can be seen from the above description, the beneficial effects of the present invention are: respectively to each wafer to be fixed and to die bond position
The calculating for carrying out grid deviation is set, is then adjusted correspondingly, is conducive to improve die bond precision；Simultaneously by multiple crystalline substances to be fixed
Member is fixed on multiple to which on die bond position, die bond is high-efficient.
Further, it is described according at least two the wafer to be fixed grid deviation and die bond reference point at least
Two wafers to be fixed are adjusted specifically:
The first average value of grid deviation is calculated according to the grid deviation of at least two wafer to be fixed；
It is adjusted according to the wafer to be fixed of first average value and die bond reference point at least two.
Seen from the above description, the grid deviation of multiple wafers to be fixed is carried out to the calculating of average value, then according to flat
Mean value adjusts multiple wafers to be fixed, and regulated efficiency is high, and the grid deviation of each wafer to be fixed can connect
By in the range of.
Further, it is described according at least two to die bond position grid deviation and die bond reference point at least
Two described is adjusted to die bond position specifically:
The second average value of grid deviation is calculated in grid deviation according at least two to die bond position；
It is adjusted according to second average value and die bond reference point at least two to die bond position.
Seen from the above description, the calculating that multiple grid deviations to die bond position are carried out to average value, then according to flat
Mean value is multiple to die bond position to adjust, and regulated efficiency is high, and each grid deviation to die bond position can connect
By in the range of.
Further, the wafer to be fixed by adjusted at least two is fixed on adjusted at least two
It is described to before on die bond position further include: coat adhesive layer on to die bond position.
Further, at least two wafer to be fixed is fixedly installed on membrane material respectively, it is described will adjustment after
At least two wafer to be fixed be fixed on adjusted at least two it is described on die bond position specifically:
The wafer to be fixed of driving at least two is moved towards close to the direction to die bond position simultaneously, and is passed through simultaneously
The mode of vacuum suction adsorbs the membrane material, separates membrane material with wafer to be fixed, completes die bond.
Seen from the above description, the adsorption film material by way of vacuum suction is conducive to make membrane material and crystalline substance to be fixed
First quick separating improves die bond efficiency.
Referring to figure 2., another technical solution of the present invention are as follows:
A kind of die bond terminal 100, including processor 1, memory 2 and be stored on memory 2 and can be on processor 1
The computer program of operation,
The processor 1 performs the steps of when executing the computer program
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
According to the first image information and wafer reference point to be fixed calculate separately to obtain at least two described in solid
Determine the grid deviation of wafer；
According to the grid deviation and die bond reference point at least two of at least two wafer to be fixed to
Fixed wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position with
At least two wafer to be fixed is arranged in a one-to-one correspondence；
To solid described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation of brilliant position；
Described in grid deviation and die bond reference point at least two according at least two to die bond position to
Die bond position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond
On position.
Further, it is described according at least two the wafer to be fixed grid deviation and die bond reference point at least
Two wafers to be fixed are adjusted specifically:
The first average value of grid deviation is calculated according to the grid deviation of at least two wafer to be fixed；
It is adjusted according to the wafer to be fixed of first average value and die bond reference point at least two.
Further, it is described according at least two to die bond position grid deviation and die bond reference point at least
Two described is adjusted to die bond position specifically:
The second average value of grid deviation is calculated in grid deviation according at least two to die bond position；
It is adjusted according to second average value and die bond reference point at least two to die bond position.
Further, it is also performed the steps of when the processor 1 executes the computer program
The wafer to be fixed by adjusted at least two be fixed on adjusted at least two described in
Before on die bond position further include: coat adhesive layer on to die bond position.
Further, at least two wafer to be fixed is fixedly installed on membrane material respectively, it is described will adjustment after
At least two wafer to be fixed be fixed on adjusted at least two it is described on die bond position specifically:
The wafer to be fixed of driving at least two is moved towards close to the direction to die bond position simultaneously, and is passed through simultaneously
The mode of vacuum suction adsorbs the membrane material, separates membrane material with wafer to be fixed, completes die bond.
Please refer to Fig. 1, the embodiment of the present invention one are as follows:
A kind of die-bonding method, includes the following steps:
S1, die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point.Three reference points
Setting carries out under the same coordinate system, and die bond reference point is the specific seat being fixed on wafer to be fixed to die bond position
Mark, refers specifically to X on horizontal plane, the coordinate in Y-direction here.It wafer reference point to be fixed and is also referred both to die bond position reference point
X on horizontal plane, the coordinate in Y-direction.
First image information of S2, the respectively wafer to be fixed of acquisition at least two.First image information passes through big target surface
Camera obtains, in the present embodiment, using the central point of big target surface camera as wafer reference point to be fixed, the camera shooting of big target surface camera
Head-up, wafer to be fixed is fixedly installed on membrane material, and wafer to be fixed is downward, and wafer to be fixed is located at big target surface phase
The top of machine.Wafer to be fixed is fixed by wafer fixture, and wafer fixture is fixed on wafer workbench, wafer workbench
It can move in the x-direction and the z-direction.
S3, according to the first image information and wafer reference point to be fixed calculate separately to obtain at least two described in
The grid deviation of fixed wafer.The grid deviation possibility of each wafer to be fixed is identical may also be different.
S4, according to the grid deviation and die bond reference point at least two of at least two wafer to be fixed
Wafer to be fixed is adjusted.In the present embodiment, step S4 specifically: S41, according at least two the wafer to be fixed
The first average value of grid deviation is calculated in grid deviation；S42, according to first average value and die bond reference point at least
Two wafers to be fixed are adjusted.When adjustment, each wafer to be fixed by the deviation of the first average value come
It is adjusted, and considers die bond reference point simultaneously, it will be each by driving wafer workbench to move in the x-direction and the z-direction
A wafer to be fixed is adjusted in place.
S5, respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position
The wafer to be fixed set at least two is arranged in a one-to-one correspondence.Second image information is obtained by another big target surface camera
It takes, in the present embodiment, using the central point of this big target surface camera as to die bond position reference point.Big target surface camera setting is to solid
The top of brilliant position, upward to die bond position.To die bond position be arranged on die bond bracket, die bond bracket by stent holder into
Row is fixed, and stent holder is fixed on bracket workbench, and bracket workbench can move in horizontal X-direction and Y-direction.Step
Adhesive layer first is coated on to die bond position before rapid S5.
S6, calculate separately to obtain at least two according to second image information and to die bond position reference point described in
The grid deviation of die bond position.
Described in S7, grid deviation and die bond reference point at least two according at least two to die bond position
It is adjusted to die bond position.In the present embodiment, step S7 specifically: S71, according at least two to die bond position
The second average value of grid deviation is calculated in grid deviation；S72, according to second average value and die bond reference point at least
Two described is adjusted to die bond position.When adjustment, each wait for die bond position pass through the deviation of the second average value into
Row adjustment, and die bond reference point is considered simultaneously, it is moved in the x-direction and the z-direction by driving arm workbench by each
It is adjusted in place to die bond position.
S8, by adjusted at least two wafer to be fixed be fixed on adjusted at least two described in solid
On brilliant position.It is specific: while the wafer to be fixed of driving at least two is moved towards close to the direction to die bond position, and
The membrane material is adsorbed by way of vacuum suction simultaneously, separates membrane material with wafer to be fixed, completes die bond.After adjustment
Wafer to be fixed be located at top to die bond position, die bond is carried out by Welding head mechanism, and Welding head mechanism is located at membrane material
Top, Welding head mechanism are equipped at least two thimble, are arranged with vacuum slot on each thimble, each thimble is ok
A wafer to be fixed is driven to move towards corresponding to die bond position.In the present embodiment, die bond reference point can be Welding head mechanism
Central point, Welding head mechanism only move up and down in z-direction, do not moved in X-direction or Y-direction.In thimble by crystalline substance to be fixed
Member presses to when die bond position, while opening vacuum slot, and wafer to be fixed is quickly allowed to separate with membrane material, and it is solid to complete batch
It is brilliant.
In the present embodiment, step S2~S4 and step S5~S7 in no particular order, can be carried out simultaneously, can also gradually into
Row.
Referring to figure 2., the embodiment of the present invention two are as follows:
A kind of die bond terminal 100, it is corresponding with the method for embodiment one.The die bond terminal 100 includes processor 1, deposits
Reservoir 2 and it is stored in the computer program that can be run on memory 2 and on processor 1,
The processor 1 performs the steps of when executing the computer program
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
According to the first image information and wafer reference point to be fixed calculate separately to obtain at least two described in solid
Determine the grid deviation of wafer；
According to the grid deviation and die bond reference point at least two of at least two wafer to be fixed to
Fixed wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position with
At least two wafer to be fixed is arranged in a one-to-one correspondence；
To solid described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation of brilliant position；
Described in grid deviation and die bond reference point at least two according at least two to die bond position to
Die bond position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond
On position.
Further, it is described according at least two the wafer to be fixed grid deviation and die bond reference point at least
Two wafers to be fixed are adjusted specifically:
The first average value of grid deviation is calculated according to the grid deviation of at least two wafer to be fixed；
It is adjusted according to the wafer to be fixed of first average value and die bond reference point at least two.
Further, it is described according at least two to die bond position grid deviation and die bond reference point at least
Two described is adjusted to die bond position specifically:
The second average value of grid deviation is calculated in grid deviation according at least two to die bond position；
It is adjusted according to second average value and die bond reference point at least two to die bond position.
Further, it is also performed the steps of when the processor 1 executes the computer program
The wafer to be fixed by adjusted at least two be fixed on adjusted at least two described in
Before on die bond position further include: coat adhesive layer on to die bond position.
Further, at least two wafer to be fixed is fixedly installed on membrane material respectively, it is described will adjustment after
At least two wafer to be fixed be fixed on adjusted at least two it is described on die bond position specifically:
The wafer to be fixed of driving at least two is moved towards close to the direction to die bond position simultaneously, and is passed through simultaneously
The mode of vacuum suction adsorbs the membrane material, separates membrane material with wafer to be fixed, completes die bond.
In conclusion a kind of die-bonding method provided by the invention and terminal, are greatly improved die bond efficiency and die bond precision,
Suitable for carrying out batch die bond to Mini LED.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (10)
1. a kind of die-bonding method characterized by comprising
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
It is calculated separately to obtain at least two crystalline substance to be fixed according to the first image information and wafer reference point to be fixed
The grid deviation of member；
According to the described to be fixed of the grid deviation of at least two wafer to be fixed and die bond reference point at least two
Wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position at least
Two wafers to be fixed are arranged in a one-to-one correspondence；
To die bond position described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation set；
To die bond described in grid deviation and die bond reference point at least two according at least two to die bond position
Position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond position
On.
2. die-bonding method according to claim 1, which is characterized in that it is described according at least two the wafer to be fixed
Grid deviation and the wafer to be fixed of die bond reference point at least two be adjusted specifically:
The first average value of grid deviation is calculated according to the grid deviation of at least two wafer to be fixed；
It is adjusted according to the wafer to be fixed of first average value and die bond reference point at least two.
3. die-bonding method according to claim 1, which is characterized in that it is described according at least two to die bond position
Grid deviation and the described of die bond reference point at least two be adjusted to die bond position specifically:
The second average value of grid deviation is calculated in grid deviation according at least two to die bond position；
It is adjusted according to second average value and die bond reference point at least two to die bond position.
4. die-bonding method according to claim 1, which is characterized in that it is described by described in adjusted at least two to solid
Determine wafer be fixed on adjusted at least two it is described to before on die bond position further include: viscous to be coated on die bond position
Connect layer.
5. die-bonding method according to claim 1, which is characterized in that at least two wafer to be fixed is fixed respectively
It is set on membrane material, the wafer to be fixed by adjusted at least two is fixed on adjusted at least two
It is described on die bond position specifically:
The wafer to be fixed of driving at least two is moved towards close to the direction to die bond position simultaneously, and passes through vacuum simultaneously
The mode of absorption adsorbs the membrane material, separates membrane material with wafer to be fixed, completes die bond.
6. a kind of die bond terminal including processor, memory and stores the meter that can be run on a memory and on a processor
Calculation machine program, which is characterized in that
The processor performs the steps of when executing the computer program
Die bond reference point, wafer reference point to be fixed are preset respectively and to die bond position reference point；
The first image information of at least two wafer to be fixed is obtained respectively；
It is calculated separately to obtain at least two crystalline substance to be fixed according to the first image information and wafer reference point to be fixed
The grid deviation of member；
According to the described to be fixed of the grid deviation of at least two wafer to be fixed and die bond reference point at least two
Wafer is adjusted；
Respectively obtain at least two the second image information to die bond position, at least two it is described to die bond position at least
Two wafers to be fixed are arranged in a one-to-one correspondence；
To die bond position described in calculating separately to obtain at least two according to second image information and to die bond position reference point
The grid deviation set；
To die bond described in grid deviation and die bond reference point at least two according at least two to die bond position
Position is adjusted；
By adjusted at least two wafer to be fixed be fixed on adjusted at least two described in die bond position
On.
7. die bond terminal according to claim 6, which is characterized in that it is described according at least two the wafer to be fixed
Grid deviation and the wafer to be fixed of die bond reference point at least two be adjusted specifically:
The first average value of grid deviation is calculated according to the grid deviation of at least two wafer to be fixed；
It is adjusted according to the wafer to be fixed of first average value and die bond reference point at least two.
8. die bond terminal according to claim 6, which is characterized in that it is described according at least two to die bond position
Grid deviation and the described of die bond reference point at least two be adjusted to die bond position specifically:
The second average value of grid deviation is calculated in grid deviation according at least two to die bond position；
It is adjusted according to second average value and die bond reference point at least two to die bond position.
9. die bond terminal according to claim 6, which is characterized in that the processor is gone back when executing the computer program
It performs the steps of
The wafer to be fixed by adjusted at least two be fixed on adjusted at least two described in die bond
Before on position further include: coat adhesive layer on to die bond position.
10. die bond terminal according to claim 6, which is characterized in that at least two wafer to be fixed is solid respectively
Surely it is set on membrane material, the wafer to be fixed by adjusted at least two is fixed on adjusted at least two
It is described on die bond position specifically:
The wafer to be fixed of driving at least two is moved towards close to the direction to die bond position simultaneously, and passes through vacuum simultaneously
The mode of absorption adsorbs the membrane material, separates membrane material with wafer to be fixed, completes die bond.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811133318.1A CN109285933B (en) | 2018-09-27 | 2018-09-27 | A kind of die-bonding method and terminal |
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| CN201811133318.1A CN109285933B (en) | 2018-09-27 | 2018-09-27 | A kind of die-bonding method and terminal |
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| CN101488552A (en) * | 2009-02-06 | 2009-07-22 | 南昌航空大学 | Die bonding method for automatic quartz alignment by image recognition |
| CN101853797A (en) * | 2009-01-13 | 2010-10-06 | 联达科技设备私人有限公司 | System and method for inspecting a wafer |
| CN103219269A (en) * | 2012-01-19 | 2013-07-24 | 中国科学院沈阳自动化研究所 | Wafer pre-locating device based on machine vision and method thereof |
| US8956911B2 (en) * | 2012-07-13 | 2015-02-17 | National Taiwan University | LED phosphor and fabricating method thereof |
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2018
- 2018-09-27 CN CN201811133318.1A patent/CN109285933B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026214A (en) * | 2006-02-22 | 2007-08-29 | 三星电机株式会社 | White light emitting device |
| CN101853797A (en) * | 2009-01-13 | 2010-10-06 | 联达科技设备私人有限公司 | System and method for inspecting a wafer |
| CN101488552A (en) * | 2009-02-06 | 2009-07-22 | 南昌航空大学 | Die bonding method for automatic quartz alignment by image recognition |
| CN103219269A (en) * | 2012-01-19 | 2013-07-24 | 中国科学院沈阳自动化研究所 | Wafer pre-locating device based on machine vision and method thereof |
| US8956911B2 (en) * | 2012-07-13 | 2015-02-17 | National Taiwan University | LED phosphor and fabricating method thereof |
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| Publication number | Publication date |
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| CN109285933B (en) | 2019-09-17 |
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