CN109280970A - A kind of high rigidity Sapphire mobile phone backboard - Google Patents

A kind of high rigidity Sapphire mobile phone backboard Download PDF

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Publication number
CN109280970A
CN109280970A CN201811010345.XA CN201811010345A CN109280970A CN 109280970 A CN109280970 A CN 109280970A CN 201811010345 A CN201811010345 A CN 201811010345A CN 109280970 A CN109280970 A CN 109280970A
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China
Prior art keywords
sapphire
layer
mobile phone
component
backboard
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CN201811010345.XA
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Chinese (zh)
Inventor
沈荣存
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Fujian Hualing Technology Co.,Ltd.
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Nanjing Tongli Crystal Materials Research Institute Co Ltd
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Priority to CN201811010345.XA priority Critical patent/CN109280970A/en
Publication of CN109280970A publication Critical patent/CN109280970A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Signal Processing (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A kind of high rigidity Sapphire mobile phone backboard provided by the invention; high-intensitive sapphire layer, graphene protective layer, the glass-engraving layer being set in turn in backboard frame including backboard frame and from bottom to top; the graphene protective layer is coated on high-intensitive sapphire layer surface, and the glass-engraving layer is detachably set in backboard frame；The high intensity sapphire layer is more doping sapphire materials, and more doping sapphire materials include high-purity Al2O3, the component that changes colour, modified component；The modified component includes silicon nitride or silicon carbide and graphene, graphite, zirconium oxide.More doping Sapphire mobile phone backboards are made of sapphire crystal, simple process, and raw material sources are abundant, rich in color, and intensity is high, and hardness is high, and wearability is good, is not likely to produce scratch；Graphene protective layer can further protect sapphire layer simultaneously；And glass-engraving layer is detachable, can be arranged according to hobby, has greatly enriched the selection of people.

Description

A kind of high rigidity Sapphire mobile phone backboard
Technical field
The present invention relates to field of mobile phones, especially a kind of high rigidity Sapphire mobile phone backboard.
Background technique
Currently, smart phone has become most important information spreading tool.Important component of the backboard as mobile phone, Its material requires have good mechanical property, thermal conductivity and dielectric properties.As 5G wireless communication technique develops, signal transmission Into the high frequency epoch, antenna for mobile phone will use array format, it is desirable that back veneer material has good wave transparent performance, thus backboard Material must have antiradar reflectivity, low-k, low-dielectric loss.
Mobile phone back veneer material includes metal, glass and zirconia ceramics etc. at present, these materials have limitation.
Metal backing: along with the progress of mobile phone light-weighted paces and metal working process, metal material starts largely It applies on mobile phone.Compared to plastics, almag intensity wants several times high, and heat dissipation performance might as well be very much, with CNC and pressure The progress of technical level is cast, processing technology no longer becomes the obstruction of metal permeability promotion.But identical as plastics, magnesium alloy is hard Spend it is lower, intolerant to scratching and corrosion, be used for a long time rear body surface can leave scratch.Metal is conductor, has electromagnetic shielding Characteristic, even if the position by adjusting antenna can evade this problem to a certain extent, but will cause signal de-emphasis etc. Adverse effect, the problem will be highlighted more in upcoming 5G communication times.Metal fuselage processing cost is higher at present, main It applies in middle and high ends type.
Glass back plate: glass experienced one section of tortuous process in the application of mobile phone.Glass, which belongs to, is relatively early applied to hand The material of machine backboard, but the portable electronic device that mobile phone is high as frequency of use, can inevitably go out during routine use Situations such as now falling, collide, squeezing, and conventional glass materials intensity is lower, easily caused when encountering above situation it is broken or Slight crack becomes the obstruction of mobile phone sale after mobile phone unit price rises violently rapidly, is replaced by metal rapidly.By the development of many years, Great promotion has been obtained in glass properties, and newest 5th generation corning glass falls in 1.6 meters of test height, serviceability rate Up to 80%.Solve the problems, such as frangible, glass starts to show compared with the advantage of metal material, since glass is by the characteristic of thermal softening, Heat it is easily processed into type, so cost declines to a great extent compared with metal.In addition glass facilitates Cell Phone Design to the unshielded effect of signal When antenna layout.
Pottery backboard: for the unremitting pursuit to appearance and texture, part cellphone enterprise begins trying to make of new material Mobile phone backboard, and what is be wherein most expected is exactly ceramics.Ceramic high temperature sintering process is easy to produce deformation and crack, once sintering After molding, the high-intensitive low feature of hardness brings high difficulty to following process.It is well known that ceramic hardness is high, Therefore CNC working hour needed for finishing be easy to cause damage far more than metal, and when processing, and yields is difficult to ensure.But ceramics have Other materials is difficult to the advantage reached, such as wear-resisting, corrosion-resistant, excellent without electromagnetic shielding, texture, promotes the mobile phone brand manufacturers to be The volume production of pottery backboard mobile phone makes unremitting effort.
Sapphire is commonly called as corundum, has excellent mechanics, optics, calorifics, dielectric properties, is a kind of high comprehensive performance Structure, function integration material.As backboard application, sapphire has high intensity, high rigidity, high heat conductance characteristic, and has Have excellent wave transparent performance: sapphire reflectivity is lower, dielectric constant is moderate (9.3-11.5), and dielectric loss is very low, high frequency item Very little is lost in electromagnetic wave under part.
Sapphire, which is directlyed adopt, as mobile phone backboard still deficiency.Pure Al2O3(sapphire main component) is colorless and transparent And breaking strength be 450MPa or so, and mobile phone backboard needs certain color and biggish breaking strength, ethereal blue jewel one As by carrying out processing on surface and becoming composite material being painted and being modified, but in this way, to lose back veneer material most heavy for processing The wave transparent ability wanted.
Also have by adding toughening material in sapphire to improve sapphire wear-resisting property, however, but can be certain Its wave transmission rate is influenced in degree.
Summary of the invention
Technical problem: in order to solve the defects of prior art, the present invention provides a kind of high rigidity Sapphire mobile phone backboards.
Technical solution: a kind of high rigidity Sapphire mobile phone backboard provided by the invention, including backboard frame (1) and from lower and On be set in turn in high-intensitive sapphire layer (2), graphene protective layer (3), glass-engraving layer (4) in backboard frame (1), it is described Graphene protective layer (3) is coated on high-intensitive sapphire layer (2) surface, and the glass-engraving layer (4) is detachably set to backboard In frame (1)；The high intensity sapphire layer (2) is more doping sapphire materials, and more doping sapphire materials include high-purity Spend Al2O3, the component that changes colour, modified component；The modified component includes silicon nitride or silicon carbide and graphene, graphite, oxidation Zirconium.
The component that changes colour includes TiO2、Fe2O3、Cr2O3, NiO and V2O5One or more of.
The high-purity Al2O3, change colour component and modified component mass ratio be 100:(0.5-1): (5-10).
Modified component includes the following parts by weight: silicon nitride or 6-8 parts of silicon carbide, and 1-2 parts of graphene, graphite 10 Part, 1-2 parts of zirconium oxide.
The preparation method of more doping sapphire materials, comprising the following steps:
(1) high-purity Al is weighed respectively2O3, change colour component and modified component, the ball milling on planetary ball mill obtain thick mixing；
(2) thick mixing is placed in EFG technique molybdenum crucible, the direction a sapphire seed crystal is packed into seed holder, rare gas To 2500 DEG C, thick mixing is molten into melt for persistently overheating in body atmosphere；Crystal starts along seed crystal in melt seed crystal contact surface position Crystalline growth, seeding temperature of sowing are 2100 DEG C, and shouldering growth period rate is gradually increased to 30mm/h, isometrical rank from 6mm/h Section crystal growth rate is 30mm/h, after crystal growth, 4-5h be cooled to room temperature to get.
The utility model has the advantages that more doping Sapphire mobile phone backboards provided by the invention are made of sapphire crystal, technique letter Single, raw material sources are abundant, rich in color, and intensity is high, and hardness is high, and wearability is good, is not likely to produce scratch；Graphene protective layer simultaneously Sapphire layer can further be protected；And glass-engraving layer is detachable, can be arranged according to hobby, has greatly enriched people's Selection.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of Sapphire mobile phone backboard of the present invention.
Specific embodiment
The present invention is further illustrated below.
Embodiment 1
More doping sapphire materials, including high-purity Al2O3, the component that changes colour, modified component, the high-purity Al2O3, change The mass ratio of colour cell part and modified component is 100:0.75:7.5.
The component that changes colour includes TiO2、Fe2O3、Cr2O3, NiO and V2O5One or more of.
Modified component includes the following parts by weight: silicon nitride or 6-8 parts of silicon carbide, and 1-2 parts of graphene, graphite 10 Part, 1-2 parts of zirconium oxide.
The preparation method of above-mentioned more doping sapphire materials, comprising the following steps:
(1) high-purity Al is weighed respectively2O3, change colour component and modified component, the ball milling on planetary ball mill obtain thick mixing；
(2) thick mixing is placed in EFG technique molybdenum crucible, the direction a sapphire seed crystal is packed into seed holder, rare gas To 2500 DEG C, thick mixing is molten into melt for persistently overheating in body atmosphere；Crystal starts along seed crystal in melt seed crystal contact surface position Crystalline growth, seeding temperature of sowing are 2100 DEG C, and shouldering growth period rate is gradually increased to 30mm/h, isometrical rank from 6mm/h Section crystal growth rate is 30mm/h, after crystal growth, 4.5h be cooled to room temperature to get.
Breaking strength is measured with the universal testing machine three-point bending method of INSTRON-1195, test size is 4mm × 40mm × 3mm, the results show that breaking strength is 682Mpa.
Test its hardness: 9 grades of Mohs；Wave transmission rate 90%.
Embodiment 2
More doping sapphire materials, including high-purity Al2O3, the component that changes colour, modified component, the high-purity Al2O3, change The mass ratio of colour cell part and modified component is 100:0.5:10.
The component that changes colour includes TiO2、Fe2O3、Cr2O3, NiO and V2O5One or more of.
Modified component includes the following parts by weight: silicon nitride or 6 parts of silicon carbide, and 2 parts of graphene, 10 parts of graphite, oxygen Change 2 parts of zirconium.
The preparation method of above-mentioned more doping sapphire materials, comprising the following steps:
(1) high-purity Al is weighed respectively2O3, change colour component and modified component, the ball milling on planetary ball mill obtain thick mixing；
(2) thick mixing is placed in EFG technique molybdenum crucible, the direction a sapphire seed crystal is packed into seed holder, rare gas To 2500 DEG C, thick mixing is molten into melt for persistently overheating in body atmosphere；Crystal starts along seed crystal in melt seed crystal contact surface position Crystalline growth, seeding temperature of sowing are 2100 DEG C, and shouldering growth period rate is gradually increased to 30mm/h, isometrical rank from 6mm/h Section crystal growth rate is 30mm/h, after crystal growth, 4h be cooled to room temperature to get.
Breaking strength is measured with the universal testing machine three-point bending method of INSTRON-1195, test size is 4mm × 40mm × 3mm, the results show that breaking strength is 674Mpa.
Test its hardness: 9 grades of Mohs；Wave transmission rate 86%.
Embodiment 3
More doping sapphire materials, including high-purity Al2O3, the component that changes colour, modified component, the high-purity Al2O3, change The mass ratio of colour cell part and modified component is 100:1:5.
The component that changes colour includes TiO2、Fe2O3、Cr2O3, NiO and V2O5One or more of.
Modified component includes the following parts by weight: silicon nitride or 8 parts of silicon carbide, and 1 part of graphene, 10 parts of graphite, oxygen Change 1 part of zirconium.
The preparation method of above-mentioned more doping sapphire materials, comprising the following steps:
(1) high-purity Al is weighed respectively2O3, change colour component and modified component, the ball milling on planetary ball mill obtain thick mixing；
(2) thick mixing is placed in EFG technique molybdenum crucible, the direction a sapphire seed crystal is packed into seed holder, rare gas To 2500 DEG C, thick mixing is molten into melt for persistently overheating in body atmosphere；Crystal starts along seed crystal in melt seed crystal contact surface position Crystalline growth, seeding temperature of sowing are 2100 DEG C, and shouldering growth period rate is gradually increased to 30mm/h, isometrical rank from 6mm/h Section crystal growth rate is 30mm/h, after crystal growth, 5h be cooled to room temperature to get.
Breaking strength is measured with the universal testing machine three-point bending method of INSTRON-1195, test size is 4mm × 40mm × 3mm, the results show that breaking strength is 670Mpa.
Test its hardness: 9 grades of Mohs；Wave transmission rate 87%.
Embodiment 4
High rigidity Sapphire mobile phone backboard is set in turn in backboard frame (1) including backboard frame (1) and from bottom to top High-intensitive sapphire layer (2), graphene protective layer (3), glass-engraving layer (4), the graphene protective layer (3) are coated on high-strength Sapphire layer (2) surface is spent, the glass-engraving layer (4) is detachably set in backboard frame (1)；The high intensity sapphire layer It (2) is more doping sapphire materials of embodiment 1 to 3.

Claims (5)

1. a kind of high rigidity Sapphire mobile phone backboard, it is characterised in that: be set in turn in including backboard frame (1) and from bottom to top High-intensitive sapphire layer (2), graphene protective layer (3), glass-engraving layer (4) in backboard frame (1), the graphene protective layer (3) it is coated on high-intensitive sapphire layer (2) surface, the glass-engraving layer (4) is detachably set in backboard frame (1)；It is described High-intensitive sapphire layer (2) is more doping sapphire materials, and more doping sapphire materials include high-purity Al2O3, group of changing colour Part, modified component；The modified component includes silicon nitride or silicon carbide and graphene, graphite, zirconium oxide.
2. a kind of high rigidity Sapphire mobile phone backboard according to claim 1, it is characterised in that: the component that changes colour includes TiO2、Fe2O3、Cr2O3, NiO and V2O5One or more of.
3. a kind of high rigidity Sapphire mobile phone backboard according to claim 1, it is characterised in that: the high-purity Al2O3、 The mass ratio of component and modified component of changing colour is 100:(0.5-1): (5-10).
4. a kind of high rigidity Sapphire mobile phone backboard according to claim 1, it is characterised in that: modified component includes following The component of parts by weight: silicon nitride or 6-8 parts of silicon carbide, 1-2 parts of graphene, 10 parts of graphite, 1-2 parts of zirconium oxide.
5. a kind of high rigidity Sapphire mobile phone backboard according to claim 1, it is characterised in that: more doping sapphires The preparation method of material, comprising the following steps:
(1) high-purity Al is weighed respectively2O3, change colour component and modified component, the ball milling on planetary ball mill obtain thick mixing；
(2) thick mixing is placed in EFG technique molybdenum crucible, the direction a sapphire seed crystal is packed into seed holder, rare gas gas To 2500 DEG C, thick mixing is molten into melt for persistently overheating in atmosphere；Crystal starts to crystallize along seed crystal in melt seed crystal contact surface position Growth, seeding temperature of sowing are 2100 DEG C, and shouldering growth period rate is gradually increased to 30mm/h from 6mm/h, and the isometrical stage is brilliant Body growth rate is 30mm/h, after crystal growth, 4-5h be cooled to room temperature to get.
CN201811010345.XA 2018-08-31 2018-08-31 A kind of high rigidity Sapphire mobile phone backboard Pending CN109280970A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110528076A (en) * 2019-10-08 2019-12-03 四川大学 A kind of sapphire and graphene doping generate sapphire method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110528076A (en) * 2019-10-08 2019-12-03 四川大学 A kind of sapphire and graphene doping generate sapphire method

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