CN109273467A - Back side illumination image sensor and its manufacturing method - Google Patents
Back side illumination image sensor and its manufacturing method Download PDFInfo
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- CN109273467A CN109273467A CN201811024241.4A CN201811024241A CN109273467A CN 109273467 A CN109273467 A CN 109273467A CN 201811024241 A CN201811024241 A CN 201811024241A CN 109273467 A CN109273467 A CN 109273467A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 110
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- 238000003491 array Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 72
- 229910052710 silicon Inorganic materials 0.000 claims description 72
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of back side illumination image sensor and its manufacturing methods.The back side illumination image sensor includes: substrate, has multiple pixel regions arranged in arrays on the substrate；The pixel region, which has, to be stacked gradually along the direction perpendicular to the substrate in the first photosensitive layer, the first insulating layer, the second photosensitive layer on the substrate；First photosensitive layer is converted into the first electric signal for absorbing the first optical signal；First insulating layer is for electrically isolating first photosensitive layer and second photosensitive layer；Second photosensitive layer is used to absorb the second optical signal for having different wave length with first optical signal, and is converted into the second electric signal.The present invention no setting is required optical filter, simplifies the manufacturing process of back side illumination image sensor, reduces the manufacturing cost of back side illumination image sensor.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of back side illumination image sensor and its manufacturers
Method.
Background technique
So-called imaging sensor refers to the device for converting optical signals to electric signal.It is different according to the principle of its foundation, it can
To divide into CCD (Charge Coupled Device, charge coupled cell) imaging sensor and CMOS
(Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device) imaging sensor.Due to
Cmos image sensor is made of traditional cmos circuit technique, therefore can will be outer required for imaging sensor and its
It encloses circuit to be integrated, so that cmos image sensor has wider array of application prospect.
According to the difference for the position for receiving light, cmos image sensor can be divided into imaging sensor front-illuminated and back-illuminated
Formula (Back Side Illumination, BSI) imaging sensor.Wherein, compared with imaging sensor front-illuminated, back-illuminated type figure
As being exactly to change the structure inside element in place of the maximum optimization of sensor, i.e., the element input path of photosensitive layer is turned
Light can be entered from back side direct projection, avoids in imaging sensor front-illuminated, light will receive lenticule and photoelectricity for direction
The influence of structure and thickness between diode, improves the efficiency of light receiver.CMOS back side illumination image sensor has work
Skill is simple, be easy to integrated other devices, small in size, light-weight, small power consumption and it is at low cost the advantages that.Therefore, with image sensing
The development of technology, CMOS back side illumination image sensor replace CCD back side illumination image sensor to be applied to all kinds of electricity more and more
In sub- product.Currently, CMOS back side illumination image sensor has been widely used for static digital camera, DV, medical treatment
With photographic device and automobile-used photographic device etc..
In order to realize the isolation to different wave length light, optical filter is both provided in existing back side illumination image sensor.
The effect of optical filter is that the light of specific wavelength is allowed to pass through, and by the light absorption or reflection of other wavelength.But optical filter system
It is expensive to make complex steps, the prices of raw materials, the manufacturing process complexity of back side illumination image sensor is caused to increase, manufacturing cost
It increases.
Therefore, how to simplify the manufacturing process of back side illumination image sensor, reduce manufacturing cost, be urgently to be resolved at present
Technical problem.
Summary of the invention
The present invention provides a kind of back side illumination image sensor and its manufacturing method, passes for solving existing back side illumination image
Sensor manufacturing process complexity, the higher problem of manufacturing cost.
To solve the above-mentioned problems, the present invention provides a kind of back side illumination image sensors, comprising:
Substrate has multiple pixel regions arranged in arrays on the substrate；
It is photosensitive in first on the substrate that there is the pixel region edge to stack gradually perpendicular to the direction of the substrate
Layer, the first insulating layer, the second photosensitive layer；
First photosensitive layer is converted into the first electric signal for absorbing the first optical signal；
First insulating layer is for electrically isolating first photosensitive layer and second photosensitive layer；
Second photosensitive layer be used for absorbs with first optical signal with different wave length the second optical signal, and by its
Be converted to the second electric signal.
Preferably, the wavelength of first optical signal is greater than the wavelength of second optical signal；
The substrate includes the support substrate and device substrate being stacked；The device lining is directed toward along the support substrate
The direction at bottom, first photosensitive layer, first insulating layer, second photosensitive layer are cascadingly set on the device lining
Bottom deviates from the surface of the support substrate.
Preferably, the pixel region further include:
First memory block is set in the device substrate；
First transmission channel, while first memory block and first photosensitive layer are connected, for electric by described first
Signal is transmitted to first memory block；
Second memory block is set in the device substrate；
Second transmission channel, while second memory block and second photosensitive layer are connected, for electric by described second
Signal is transmitted to second memory block.
Preferably, first photosensitive layer includes the first P-type silicon layer and the first N-type silicon layer being stacked；Described
Two photosensitive layers include the second P-type silicon layer and the second N-type silicon layer being stacked；First insulating layer is set to described first
Between N-type silicon layer and the second P-type silicon layer.
Preferably, the pixel region further include along perpendicular to the substrate direction stack gradually it is photosensitive in described second
The second insulating layer of layer surface, third photosensitive layer；
The second insulating layer is for electrically isolating second photosensitive layer and the third photosensitive layer；
The third photosensitive layer is converted into third electric signal, and second light for absorbing third optical signal
The wavelength of signal is greater than the wavelength of the third optical signal.
To solve the above-mentioned problems, the present invention also provides a kind of manufacturing methods of back side illumination image sensor, including such as
Lower step:
One substrate is provided；
The first photosensitive layer is formed on the substrate, first photosensitive layer is for absorbing the first optical signal, and by its turn
It is changed to the first electric signal；
The first insulating layer is formed in the described first photosensitive layer surface；
The second photosensitive layer is formed in first surface of insulating layer, second photosensitive layer is for absorbing and first light
The wavelength of signal is greater than the wavelength of second optical signal, and is converted into the second electric signal.
Preferably, the substrate includes the support substrate and device substrate being stacked；The first photosensitive layer is formed in described
Specific steps on substrate include:
Deposits dielectric materials deviate from the surface of the support substrate in the device substrate, form dielectric layer；
The first P-type silicon materials are deposited in the dielectric layer surface, form the first P-type silicon layer；
The first N-type silicon materials are deposited in the first P-type silicon surface, form the first N-type silicon layer.
Preferably, the surface of the device substrate towards the support substrate is provided with the first conductive contact layer；Deposition the
One P-type silicon materials include: in the specific steps of the dielectric layer surface
The dielectric layer and the device substrate are etched to the first conductive contact layer surface, forms the first hole；
The first P-type silicon materials are deposited in the dielectric layer surface and first hole, are formed simultaneously first P-type
Silicon layer and the first transmission channel.
Preferably, the surface of the device substrate towards the support substrate is provided with the second conductive contact layer；Form the
Two photosensitive layers include: in the specific steps of first surface of insulating layer
The second P-type silicon materials are deposited in first surface of insulating layer, form the second P-type silicon layer；
Etch the second P-type silicon layer, first insulating layer, the first N-type silicon layer, the first P-type silicon
Layer, the dielectric layer and the device substrate form the second hole to the second conductive contact layer surface；
The second N-type silicon materials are deposited in the second P-type silicon surface and second hole, are formed simultaneously the 2nd N-
Type silicon layer and the second transmission channel.
Preferably, forming the second photosensitive layer after first surface of insulating layer further includes following steps:
Second insulating layer is formed in the described second photosensitive layer surface；
Third photosensitive layer is formed in the second insulating layer surface, the third photosensitive layer is used to absorb third optical signal,
And it is converted into third electric signal, and the wavelength of second optical signal is greater than the wavelength of the third optical signal.
Back side illumination image sensor provided by the invention and its manufacturing method, according to the light of different wave length in semiconductor material
In absorbed depth it is different, the position that photoelectron generates is different, so that tool is arranged in the photosurface in back side illumination image sensor
There is the uptake zone of different depth, be collected, handled respectively with the optical signal to different wave length, realize light splitting function, so that back
Setting complex process, expensive filter sheet structure are no longer needed in illuminated image sensor, simplify back side illumination image sensor
Manufacturing process, reduce the manufacturing cost of back side illumination image sensor.
Detailed description of the invention
Attached drawing 1 is the structural schematic diagram of back side illumination image sensor in the specific embodiment of the invention；
Attached drawing 2 is the manufacturing method flow chart of back side illumination image sensor in the specific embodiment of the invention；
Attached drawing 3A-3J is the main technique of back side illumination image sensor in the fabrication process in the specific embodiment of the invention
Structural schematic diagram.
Specific embodiment
With reference to the accompanying drawing to the specific embodiment of back side illumination image sensor provided by the invention and its manufacturing method
It elaborates.
Present embodiment provides a kind of back side illumination image sensor, and attached drawing 1 is in the specific embodiment of the invention
The structural schematic diagram of back side illumination image sensor.As shown in Figure 1, the back side illumination image sensor packet that present embodiment provides
Include: substrate has multiple pixel regions arranged in arrays on the substrate；The pixel region has along perpendicular to the lining
The direction at bottom is stacked gradually in the first photosensitive layer, the first insulating layer 134, the second photosensitive layer on the substrate；First sense
Photosphere is converted into the first electric signal for absorbing the first optical signal；First insulating layer 134 is for electrically isolating institute
State the first photosensitive layer and second photosensitive layer；Second photosensitive layer has different waves from first optical signal for absorbing
The second long optical signal, and it is converted into the second electric signal.
Arrow direction indicates that light injects the direction of the back side illumination image sensor in Fig. 1.Specifically, the substrate
It is upper that there are multiple pixel regions arranged in arrays, divided between adjacent pixel regions by the first insulated column 16 perpendicular to substrate
Every to avoid the electrical property interference between adjacent pixel regions.The periphery of the pixel region is additionally provided with weld pad 17, for receiving
External control signal.First photosensitive layer, first insulating layer 134, second photosensitive layer are along perpendicular to the substrate
Direction stack gradually, constitute stacked structure.After light is from the extraneous injection pixel region, the light of different wave length is in institute
It states the different depth position in stacked structure and is absorbed and generates photoelectron, thus realize the separation to different wave length light, it is real
Function possessed by traditional optical filter is showed, structure is complicated, expensive optical filter manufacturing step to eliminate, and simplifies
The manufacturing process of back side illumination image sensor, reduces the manufacturing cost of back side illumination image sensor.The substrate is preferably
Silicon substrate.
Preferably, the wavelength of first optical signal is greater than the wavelength of second optical signal；The substrate includes stacking
The support substrate 10 and device substrate 11 of setting；It is directed toward the direction of the device substrate 11 along the support substrate 10, described
One photosensitive layer, first insulating layer 134, second photosensitive layer are cascadingly set on the device substrate 11 away from described
The surface of support substrate 10.
First photosensitive layer and second photosensitive layer can be constituted using semiconductor material of the same race.The support substrate
10 are used to support device architecture thereon.The surface of the device substrate 11 towards the support substrate 10 is provided with metal interconnection
Layer 111, first photosensitive layer, first insulating layer 134, second photosensitive layer are stacked gradually along direction from the bottom to top
It is set to the surface that the device substrate 11 deviates from the support substrate 10, ambient is along described in direction injection from top to bottom
Pixel region.Wherein, the direction from the bottom to top refers to that the support substrate 10 is directed toward the direction of the device substrate 11, institute
It states direction from top to bottom and refers to that the device substrate 11 is directed toward the direction of the support substrate 10.
For example, first optical signal can be red signal light, and second optical signal can be green optical signal.It is red
The wavelength of light is longer, and the semiconductor material is smaller to the absorption coefficient of feux rouges, and the depth that feux rouges injects pixel region is larger, because
This feux rouges is absorbed in first photosensitive layer and generates photoelectron；The wavelength of green light is short compared with feux rouges, the semiconductor material pair
The absorption coefficient of green light is greater than feux rouges, and the depth that green light injects pixel region is small compared with feux rouges, therefore green light is photosensitive described second
Layer is absorbed and generates photoelectron.
Preferably, the pixel region further include: the first memory block 181 is set in the device substrate 11；First passes
Defeated channel 123, while first memory block 181 and first photosensitive layer are connected, it is used for first electric signal transmission
To first memory block 181；Second memory block 182 is set in the device substrate 11；Second transmission channel 133, simultaneously
Second memory block 182 and second photosensitive layer are connected, for storing second electric signal transmission to described second
Area 182.
In order to avoid interfering with each other between adjacent storage zones, first memory block 181 and second memory block 182
It is electrically isolated by the second insulated column 15.By the way that first transmission channel 123 and second transmission channel 133 is arranged,
To realize the photoelectronic collection generated to different wave length light, first optical signal and second light also can be effectively avoided
Interfering with each other between signal.
Since absorption coefficient of the silicon materials to different wave length light differs greatly, in order to further avoid the string between light
It disturbs, it is preferred that first photosensitive layer includes the first P-type silicon layer 121 and the first N-type silicon layer 122 being stacked；Described
Two photosensitive layers include the second P-type silicon layer 131 and the second N-type silicon layer 132 being stacked；First insulating layer 134 is arranged
Between the first N-type silicon layer 122 and the second P-type silicon layer 131.
In order to be further simplified manufacturing process, passed it is furthermore preferred that the first P-type silicon layer 121 is also filled up in described first
In defeated channel 123, the second N-type silicon layer 132 is also filled up in second transmission channel 133.In other embodiments
In, the first N-type silicon layer 122 can also be filled in first transmission channel 123.
Preferably, the pixel region further include along perpendicular to the substrate direction stack gradually it is photosensitive in described second
The second insulating layer 144 of layer surface, third photosensitive layer；The second insulating layer 144 is for electrically isolating second photosensitive layer
With the third photosensitive layer；The third photosensitive layer is converted into third electric signal, and institute for absorbing third optical signal
The wavelength for stating the second optical signal is greater than the wavelength of the third optical signal.
Specifically, the third optical signal can be blue light signals.Blue light wavelength is short compared with green light, the semiconductor material
Green light is greater than to the absorption coefficient of blue light, the depth that blue light injects pixel region is small compared with green light, therefore blue light is in the third sense
Photosphere is absorbed and generates photoelectron.Correspondingly, the third photosensitive layer includes the third P-type silicon layer 141 being stacked and
Three N-type silicon layers 142；The second insulating layer 144 is set to the third P-type silicon layer 141 and the second N-type silicon layer 132
Between.It further include the third memory block 183 being set in the device substrate 11 in the pixel region；Third transmission channel
143 one end connect the third memory block 183, the other end connects the third N-type silicon layer 142, the third N-type silicon layer
142 also fill up in the third transmission channel 143.
In order to further avoid interfering with each other between electric signal, in first transmission channel 123, second transmission
The sidewall surfaces of channel 133 and the third transmission channel 143 are also covered with insulation material layer.
In the back side illumination image sensor that present embodiment provides, in order to by the control in the metal interconnecting layer
Electric signal transmission is to corresponding memory block, each memory block (such as the first memory block 181, the second memory block 182 or third storage
Area 183) in be respectively provided with there are two transistor, and the drain electrode of one of transistor is electrically connected with the source electrode of another transistor,
To reduce the connection line in the back side illumination image sensor, to be further simplified the system of the back side illumination image sensor
Make technique.
Moreover, present embodiment additionally provides a kind of manufacturing method of back side illumination image sensor, and attached drawing 2 is
The manufacturing method flow chart of back side illumination image sensor in the specific embodiment of the invention, attached drawing 3A-3J are of the invention specific real
Apply the main technique structural schematic diagram of back side illumination image sensor in the fabrication process in mode.As shown in Fig. 2, Fig. 3 A- Fig. 3 J,
The manufacturing method for the back side illumination image sensor that present embodiment provides, includes the following steps:
Step S21 provides a substrate, as shown in Figure 3A.
Step S22 forms the first photosensitive layer on the substrate, and first photosensitive layer is used to absorb the first optical signal,
And it is converted into the first electric signal.
Specifically, the substrate includes the support substrate 10 and device substrate 11 being stacked；Form the first photosensitive layer
Include: in the specific steps on the substrate
(S22-1) deposits dielectric materials deviate from the surface of the support substrate 10 in the device substrate 11, form medium
Layer 124.Specifically, the support substrate 10 is used to support device architecture on it, and the device substrate 11 is towards described
The surface of support substrate 10 is provided with metal interconnecting layer 111, and ambient is directed toward the support substrate from the device substrate 11
The back side illumination image sensor is injected in 10 direction, avoids the influence that metal interconnecting layer transmits light.
(S22-2) the first P-type silicon materials of deposition form the first P-type silicon layer 121, such as scheme in 124 surface of dielectric layer
Shown in 3C.Specifically, P-type ion first is carried out to polysilicon or amorphous silicon to adulterate in situ, form the first P-type silicon materials；
Then the first P-type silicon materials are deposited in institute using chemical vapor deposition (Chemical VaporDeposition, CVD)
124 surface of dielectric layer is stated, to avoid damage of the ion implanting mode to device architecture.
Preferably, the surface of the device substrate 11 towards the support substrate 10 is provided with the first conductive contact layer；It is heavy
Accumulating specific steps of the first P-type silicon materials in 124 surface of dielectric layer includes:
(a) dielectric layer 124 and the device substrate 11 to the first conductive contact layer surface are etched, forms first
Hole 31, as shown in Figure 3B；
(b) the first P-type silicon materials of deposition are described in being formed simultaneously in 124 surface of dielectric layer and first hole 31
First P-type silicon layer 121 and the first transmission channel 123, as shown in Figure 3 C.Wherein, the first P-type silicon materials are being deposited in institute
Before stating in the first hole 31, the device lining can also be completely cut off in the sidewall surfaces deposition of insulative material layer in first hole 31
Bottom 11 and the first P-type silicon layer 121.First transmission channel 123 is used for the photoelectricity that will be generated in first photosensitive layer
Son is transmitted to first conductive contact layer, then is transmitted to the first memory block 181 through first conductive contact layer.
(S22-3) the first N-type silicon materials of deposition form the first N-type silicon layer in 121 surface of the first P-type silicon layer
122, as shown in Figure 3D.Specifically, N-type ion first is carried out to polysilicon or amorphous silicon to adulterate in situ, form the first N-type
Silicon materials；Then the first N-type silicon is deposited using chemical vapor deposition (Chemical Vapor Deposition, CVD)
Material is in 121 surface of the first P-type silicon layer, to avoid damage of the ion implanting mode to device architecture.
Step S23 forms the first insulating layer 134 in the described first photosensitive layer surface, as shown in FIGURE 3 E.Wherein, described
One insulating layer 134 can by the way of chemical vapor deposition deposition of insulative material in the 122 surface shape of the first N-type silicon layer
At.The insulating materials is preferably the higher insulating materials of light transmittance, such as silica.
Step S24 forms the second photosensitive layer in 134 surface of the first insulating layer, and second photosensitive layer is for absorbing
It is greater than the wavelength of second optical signal with the wavelength of first optical signal, and is converted into the second electric signal.
Preferably, the surface of the device substrate 11 towards the support substrate 10 is provided with the second conductive contact layer；Shape
Specific steps at the second photosensitive layer in 134 surface of the first insulating layer include:
(S23-1) the second P-type silicon materials of deposition form the second P-type silicon layer 131 in 134 surface of the first insulating layer,
As illustrated in Figure 3 F.Specifically, P-type ion (such as boron ion) first is carried out to polysilicon or amorphous silicon to adulterate in situ, formed
Second P-type silicon materials；Then it is formed using the second P-type silicon materials described in CVD deposition in 134 surface of the first insulating layer
The second P-type silicon layer 131.
(S23-2) etch the second P-type silicon layer 131, first insulating layer 134, the first N-type silicon layer 122,
The first P-type silicon layer 121, the dielectric layer 124 and the device substrate 11 are to the second conductive contact layer surface, shape
At the second hole.
(S23-3) the second N-type silicon materials of deposition are in 131 surface of the second P-type silicon layer and second hole, simultaneously
The second N-type silicon layer 132 and the second transmission channel 133 are formed, as shown in Figure 3 G.Second transmission channel 133 is used for will be described
The photoelectron transfer generated in second photosensitive layer is transmitted to second conductive contact layer, then through second conductive contact layer
Second memory block 182.
Specifically, N-type ion (such as phosphonium ion) first is carried out to polysilicon or amorphous silicon to adulterate in situ, form the
Two N-type silicon materials；Then it is formed using the second N-type silicon materials described in CVD deposition in 131 surface of the second P-type silicon layer
The second N-type silicon layer 132.Wherein, the second N-type silicon materials are being deposited before in second hole, it can also be
The sidewall surfaces deposition of insulative material layer in second hole completely cuts off the second N-type silicon materials in second transmission channel 133
With the device substrate 11, the first N-type silicon layer 122 and the first P-type silicon layer 121.
Preferably, forming the second photosensitive layer after 134 surface of the first insulating layer further includes following steps:
Second insulating layer 144 is formed in the described second photosensitive layer surface；
Third photosensitive layer is formed in 144 surface of second insulating layer, the third photosensitive layer is for absorbing third light letter
Number, and it is converted into third electric signal, and the wavelength of second optical signal is greater than the wavelength of the third optical signal.
Specifically, the second insulating layer 144 is being formed after 132 surface of the second N-type silicon layer: using CVD
Process deposits third P-type silicon materials form third P-type silicon layer 141 in 144 surface of second insulating layer；Etch described
Three P-type silicon layers 141, the second insulating layer 144, second photosensitive layer, first insulating layer 134, the dielectric layer
124 and the device substrate 11, form the third hole for being through to third conductive contact layer surface；Using CVD process deposits
Three N-type silicon materials are formed simultaneously the third N-type silicon in 141 surface of third P-type silicon layer and the third hole
Layer 142 and third transmission channel 143.The third transmission channel 143 is used for the photoelectron that will be generated in the third photosensitive layer
It is transmitted to the third conductive contact layer, then is transmitted to third memory block 183 through the third conductive contact layer.
After the deposition for completing the third photosensitive layer, etch the third photosensitive layer, the second insulating layer 144,
Second photosensitive layer, first insulating layer 134, first photosensitive layer, the dielectric layer 124, the device substrate 11
To the device substrate 11 towards the surface of the support substrate 10, clearance hole 161 is formed, as shown in fig. 31；Then in described
In clearance hole 161 and the photosensitive layer surface deposits dielectric materials of third, the first insulated column 16 is formed, to electrically isolate adjacent picture
Plain region；Finally, forming weld pad 17 by techniques such as etching, depositions, the encapsulation to the back side illumination image sensor is realized, such as
Shown in Fig. 3 J.
The back side illumination image sensor and its manufacturing method that present embodiment provides, according to the light of different wave length half
Absorbed depth is different in conductor material, and the position that photoelectron generates is different, thus in the photosensitive of back side illumination image sensor
Uptake zone with different depths is arranged in face, is collected, is handled respectively with the optical signal to different wave length, realizes light splitting function
Can, so that no longer needing to setting complex process, expensive filter sheet structure in back side illumination image sensor, simplify back-illuminated type figure
As the manufacturing process of sensor, the manufacturing cost of back side illumination image sensor is reduced.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of back side illumination image sensor characterized by comprising
Substrate has multiple pixel regions arranged in arrays on the substrate；
The pixel region have along the direction perpendicular to the substrate stack gradually on the substrate the first photosensitive layer, the
One insulating layer, the second photosensitive layer；
First photosensitive layer is converted into the first electric signal for absorbing the first optical signal；
First insulating layer is for electrically isolating first photosensitive layer and second photosensitive layer；
Second photosensitive layer is used to absorb the second optical signal for having different wave length with first optical signal, and is converted
For the second electric signal.
2. back side illumination image sensor according to claim 1, which is characterized in that the wavelength of first optical signal is greater than
The wavelength of second optical signal；
The substrate includes the support substrate and device substrate being stacked；The device substrate is directed toward along the support substrate
Direction, first photosensitive layer, first insulating layer, second photosensitive layer are cascadingly set on the device substrate back
Surface from the support substrate.
3. back side illumination image sensor according to claim 2, which is characterized in that the pixel region further include:
First memory block is set in the device substrate；
First transmission channel, while first memory block and first photosensitive layer are connected, it is used for first electric signal
It is transmitted to first memory block；
Second memory block is set in the device substrate；
Second transmission channel, while second memory block and second photosensitive layer are connected, it is used for second electric signal
It is transmitted to second memory block.
4. back side illumination image sensor according to claim 3, which is characterized in that first photosensitive layer includes that stacking is set
The the first P-type silicon layer and the first N-type silicon layer set；Second photosensitive layer includes the second P-type silicon layer and second being stacked
N-type silicon layer；First insulating layer is set between the first N-type silicon layer and the second P-type silicon layer.
5. back side illumination image sensor according to claim 2, which is characterized in that the pixel region further includes along vertical
The second insulating layer in the described second photosensitive layer surface, third photosensitive layer are stacked gradually in the direction of the substrate；
The second insulating layer is for electrically isolating second photosensitive layer and the third photosensitive layer；
The third photosensitive layer is converted into third electric signal, and second optical signal for absorbing third optical signal
Wavelength be greater than the third optical signal wavelength.
6. a kind of manufacturing method of back side illumination image sensor, which comprises the steps of:
One substrate is provided；
The first photosensitive layer is formed on the substrate, first photosensitive layer is converted into for absorbing the first optical signal
First electric signal；
The first insulating layer is formed in the described first photosensitive layer surface；
The second photosensitive layer is formed in first surface of insulating layer, second photosensitive layer is for absorbing and first optical signal
Wavelength be greater than the wavelength of second optical signal, and be converted into the second electric signal.
7. the manufacturing method of back side illumination image sensor according to claim 6, which is characterized in that the substrate includes layer
The support substrate and device substrate of folded setting；The first photosensitive layer, which is formed, in the specific steps on the substrate includes:
Deposits dielectric materials deviate from the surface of the support substrate in the device substrate, form dielectric layer；
The first P-type silicon materials are deposited in the dielectric layer surface, form the first P-type silicon layer；
The first N-type silicon materials are deposited in the first P-type silicon surface, form the first N-type silicon layer.
8. the manufacturing method of back side illumination image sensor according to claim 7, which is characterized in that the device substrate court
The surface of the support substrate is provided with the first conductive contact layer；The first P-type silicon materials are deposited in the dielectric layer surface
Specific steps include:
The dielectric layer and the device substrate are etched to the first conductive contact layer surface, forms the first hole；
The first P-type silicon materials are deposited in the dielectric layer surface and first hole, are formed simultaneously the first P-type silicon layer
With the first transmission channel.
9. the manufacturing method of back side illumination image sensor according to claim 8, which is characterized in that the device substrate court
The surface of the support substrate is provided with the second conductive contact layer；The second photosensitive layer is formed in first surface of insulating layer
Specific steps include:
The second P-type silicon materials are deposited in first surface of insulating layer, form the second P-type silicon layer；
Etch the second P-type silicon layer, first insulating layer, the first N-type silicon layer, the first P-type silicon layer, institute
Dielectric layer and the device substrate are stated to the second conductive contact layer surface, forms the second hole；
The second N-type silicon materials are deposited in the second P-type silicon surface and second hole, are formed simultaneously the second N-type silicon
Layer and the second transmission channel.
10. the manufacturing method of back side illumination image sensor according to claim 6, which is characterized in that it is photosensitive to form second
Layer further includes following steps after first surface of insulating layer:
Second insulating layer is formed in the described second photosensitive layer surface；
Third photosensitive layer is formed in the second insulating layer surface, the third photosensitive layer is used to absorb third optical signal, and will
It is converted to third electric signal, and the wavelength of second optical signal is greater than the wavelength of the third optical signal.
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| CN109786416A (en) * | 2019-03-25 | 2019-05-21 | 德淮半导体有限公司 | Back side illumination image sensor and its manufacturing method |
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