CN109271717A - A kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule - Google Patents
A kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule Download PDFInfo
- Publication number
- CN109271717A CN109271717A CN201811124762.7A CN201811124762A CN109271717A CN 109271717 A CN109271717 A CN 109271717A CN 201811124762 A CN201811124762 A CN 201811124762A CN 109271717 A CN109271717 A CN 109271717A
- Authority
- CN
- China
- Prior art keywords
- fbsm
- state
- equivalent
- full
- hbsm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
Abstract
This application provides a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule, the working condition of full-bridge submodule FBSM is divided into positive switching state, negative sense switching state and blocking according to the difference of control signal EN；Modeling method includes: that the working condition of FBSM is judged according to control signal EN, and when controlling signal EN=1, FBSM is in positive switching state, and when controlling signal EN=-1, FBSM is in negative sense switching state, and when controlling signal EN=0, FBSM is in blocking；Full-bridge submodule FBSM is equivalent to HBSM circuit according to the working condition of FBSM and calculates the circuit parameter of HBSM circuit, obtains MMC electro-magnetic transient equivalent model；Whether it is normal operating condition according to last moment, determines whether be introduced into transition state when locking.The application is by being first divided into positive switching state, negative sense switching state and blocking for the operating status of FBSM, so that FBSM is equivalent to HBSM circuit by the principle of equal effects according to HBSM.The present invention can accelerate the simulation velocity of FBSM-MMC in PSCAD/EMTDC under conditions of not reducing precision.
Description
Technical field
The present invention relates to technical field of power systems more particularly to a kind of equivalent moulds of MMC electro-magnetic transient of full-bridge submodule
The modeling method of type.
Background technique
As modularization multi-level converter (Modular Multilevel Converter, MMC) is due to its output electricity
Flat height, harmonic content is few, can independent control active power, reactive power and be widely applied.There are three types of its submodules: half
Bridge submodule (half bridge sub-module, HBSM), clamper Shuangzi module (clamp double sub-module,
CDSM), full-bridge submodule (full bridge sub-module, FBSM).Study now it is more for topologies it is simple
HBSM, but due to its can not isolated DC side failure, generally require exchange side setting breaker, increase engineering cost.And
FBSM is since it can realize isolated DC side failure by locking, and compared to FBSM the advantages that can be realized fault traversing
And it receives significant attention.
But when being studied using PSCAD/EMTDC, when the three end FBSM-MMC system level numbers built reach 21
When level, the time needed for discovery emulation 1 second has reached 3 hours unexpectedly, has seriously affected Efficiency.
In order to solve the problems, such as that FBSM-MMC simulation velocity is slow, a kind of MMC electro-magnetic transient etc. of full-bridge submodule is proposed
Imitate the modeling method of model.
Summary of the invention
The present invention provides a kind of modeling methods of the MMC electro-magnetic transient equivalent model of full-bridge submodule, for solving
The slow technical problem of FBSM-MMC simulation velocity, is first divided into normal operating condition and blocking for the operating status of FBSM.?
According to the principle of equal effects of HBSM under normal condition, in the lockout condition according to bridge arm current, FBSM external voltage and capacitance voltage
Size relatively determine its state being accurately in, thus carry out it is equivalent, with equivalent model carry out emulation can greatly improve
Simulation velocity.
In view of this, the application first aspect provides a kind of building for the MMC electro-magnetic transient equivalent model of full-bridge submodule
The working condition of mould method, the full-bridge submodule FBSM is divided into positive switching state, negative sense according to the difference of control signal EN
Switching state and blocking；
The modeling method includes:
The working condition that FBSM is judged according to control signal EN, when controlling signal EN=1, FBSM is in positive switching shape
State, when controlling signal EN=-1, FBSM is in negative sense switching state, and when controlling signal EN=0, FBSM is in blocking；
Judged to be in forward direction when FBSM locking according to the size relation of the positive and negative of the electric current for flowing through FBSM, the end FBSM voltage and capacitance voltage
Charged state, positive big resistance states, negatively charged state or the big resistance states of negative sense；FBSM by positive switching state or
Person's negative sense switching state, which is jumped between blocking, joined a kind of transition state；
The full-bridge submodule FBSM is equivalent to HBSM circuit according to the working condition of FBSM and calculates HBSM circuit
Circuit parameter obtains MMC electro-magnetic transient equivalent model.
Preferably, the full-bridge submodule FBSM includes IGBT1, IGBT2, IGBT3, IGBT4, diode D1, diode
D2, diode D3, diode D4 and capacitor C；
The diode D1, diode D2, diode D3, diode D4 anode respectively with IGBT1, IGBT2, IGBT3,
The emitter of IGBT4 connects, diode D1, diode D2, diode D3, diode D4 cathode respectively with IGBT1, IGBT2,
The collector of IGBT3, IGBT4 connects, and forms switching group T1, switching group T2, switching group T3, switching group T4, and the first of capacitor C1
End connection diode D1 cathode, the second end of capacitor C1 connect diode D2 anode, and the port of the FBSM is denoted as N1 and N2, N1
Connect the emitter of IGBT, the collector of N2 connection IGBT4；
The forward direction switching state includes positive investment state and excision state, and negative sense switching state includes negative sense investment shape
State and excision state；
If IGBT1, IGBT4 are connected, when IGBT2, IGBT3 are turned off, the capacitor of FBSM is in positive investment state, FBSM pairs
The voltage of outer performance is that submodule capacitor voltage is Vc；
If IGBT2, IGBT3 be connected, IGBT1, IGBT4 turn off when, the capacitor of FBSM be in negative sense put into state, FBSM pairs
The voltage of outer performance is the negative value-Vc of submodule capacitor voltage；
When IGBT1, IGBT3 conducting and IGBT2, IGBT4 turn off when either work as IGBT2, IGBT4 conducting and IGBT1,
When IGBT3 is turned off, capacitor is in excision state, and the voltage that FBSM is externally showed is 0；
When IGBT1, IGBT2, IGBT3, IGBT4 are turned off, FBSM is blocking.
Preferably, the positive switching state includes positive investment state and excision state, and negative sense switching state includes negative
To investment state and excision state；
Following steps are executed after control signal EN=1 judges that FBSM is in positive switching state:
Judge whether the IGBT trigger signal F (i) of FBSM is equal to 1, if the IGBT trigger signal F (i) of FBSM is not equal to 1,
Then judge that FBSM is in excision state, judges that FBSM is in positive investment shape if the IGBT trigger signal F (i) of FBSM is equal to 1
State；
Following steps are executed after control signal EN=1 judges that FBSM is in negative sense switching state:
Judge whether the IGBT trigger signal F (i) of FBSM is equal to 1, if the IGBT trigger signal F (i) of FBSM is not equal to 1,
Then judge that FBSM is in excision state, judges that FBSM is in negative sense investment shape if the IGBT trigger signal F (i) of FBSM is equal to 1
State；
The full-bridge submodule FBSM is equivalent to HBSM circuit by the working condition according to FBSM
When judging the working condition of FBSM for positive switching state, the full-bridge submodule FBSM is being equivalent to HBSM just
The full-bridge submodule FBSM is equivalent to when judging the working condition of FBSM for negative sense switching state to access circuit
HBSM negative sense accesses circuit.
Preferably, the blocking includes positive charge state, positive big resistance states, negatively charged state and negative sense
Big resistance states；
Following steps are executed after judging that FBSM is in blocking according to control signal EN:
When the input current iarm (t) for judging FBSM is greater than 0, the end FBSM voltage u is judgediWhether capacitance voltage u is greater thanc,
If so, judging that FBSM is in positive charge state, if not.Then judge that FBSM is in positive big resistance states；
When judging the input current iarm (t) of FBSM no more than 0, by the end FBSM voltage uiTake negative value judgement-uiIt is whether big
In capacitance voltage uc, if so, judging that FBSM is in negatively charged state, if it is not, then judging that FBSM is in the big resistance shape of negative sense
State；
The full-bridge submodule FBSM is equivalent to HBSM circuit by the working condition according to FBSM
When judging the working condition of FBSM for positive charged state or positive big resistance states, by the full-bridge submodule
FBSM is equivalent to HBSM forward direction access circuit, when judging the working condition of FBSM for negative sense charged state or the big resistance states of negative sense
When, the full-bridge submodule FBSM is equivalent to HBSM negative sense access circuit.
Preferably, when the working condition of FBSM is converted to blocking from positive switching state or negative sense switching state
When, it executes following steps and carries out transition:
Enable flag=1, flag_1=1 and flag_2=1；
Judge whether flag is greater than 0, if so, carrying out in next step, if it is not, then transient process terminates；
Judge whether the input current iarm (t) of FBSM is greater than 0, if so, judging whether flag_1 is greater than 0, if it is not, sentencing
Whether disconnected flag_2 is greater than 0；
When judging result is that flag_1 is greater than 0, then the working condition of FBSM is judged for positive charged state and enables flag_
2=-1；When judging result is that flag_2 is greater than 0, then the working condition of FBSM is judged for negative sense charged state and enables flag_1
=-1；When judging result is that flag_1 is not more than 0 no more than 0 or flag_2, then flag=-1 is enabled；
It is returned after preset time and executes the step of whether flag is greater than 0 judged.
Preferably, the circuit parameter for calculating HBSM circuit specifically includes:
IGBT and anti-paralleled diode are equivalent to variable resistance, wherein it is set as R1 with the concatenated variable resistance of capacitor C,
It is set as R2 with the whole variable resistance in parallel of capacitor C and R1；Specifically, when R1 is small resistance, and R2 is big resistance, show
The capacitor of HBSM is in investment state；When R1 is big resistance, and R2 is small resistance, the capacitor of HBSM is in excision state；It will be electric
Hold the equivalent circuit form that C is equivalent to current source parallel circuit.
The equivalent circuit parameter of HBSM circuit is calculated by formula group；
The formula group are as follows:
Wherein, iarm (t) is the input current of HBSM, ucFor capacitance voltage；IGBT and anti-paralleled diode etc. in HBSM
Effect is variable resistance, and the variable resistance being connected in series to the capacitor is set as R1, with capacitor and R1Whole variable resistance in parallel is set as
R2, R1And R2Value determined according to working condition, when HBSM locking is in positive big resistance states or the big resistance states of negative sense
When, R1And R2All value is big resistance；RcFor the resistance of the corresponding equivalent Norton model of capacitor C, ICSIt is corresponding equivalent for capacitor C
The current source of Norton model；ReqFor the resistance of the equivalent Norton model of HBSM submodule, IeqFor the equivalent promise of HBSM submodule
The current source of model；T indicates current time, and t- Δ t indicates the previous moment at simulation process current time.
The application second aspect provides a kind of modelling apparatus of the MMC electro-magnetic transient equivalent model of full-bridge submodule, described
Equipment includes processor and memory:
Said program code is transferred to the processor for storing program code by the memory；
The processor is used for a kind of full-bridge submodule according to the above-mentioned first aspect of instruction execution in said program code
The modeling method of the MMC electro-magnetic transient equivalent model of block.
The application third aspect provides a kind of computer readable storage medium, and the computer readable storage medium is for depositing
Program code is stored up, a kind of MMC electro-magnetic transient for full-bridge submodule that said program code is used to execute above-mentioned first aspect is equivalent
The modeling method of model.
The application fourth aspect provides a kind of computer program product including instruction, when run on a computer,
So that the computer executes a kind of modeling side of the MMC electro-magnetic transient equivalent model of full-bridge submodule of above-mentioned first aspect
Method.
As can be seen from the above technical solutions, the invention has the following advantages that
This application provides a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule, full-bridge submodules
The working condition of FBSM is divided into positive switching state, negative sense switching state and blocking according to the difference of control signal EN；It builds
Mould method includes: that the working condition of FBSM is judged according to trigger signal EN, and when controlling signal EN=1, FBSM is in positive switching
State, when controlling signal EN=-1, FBSM is in negative sense switching state, and when controlling signal EN=0, FBSM is in latch like
State；Full-bridge submodule FBSM is equivalent to HBSM circuit according to the working condition of FBSM and calculates the circuit parameter of HBSM circuit,
Obtain MMC electro-magnetic transient equivalent model.The application is by being first divided into positive switching state, negative sense switching for the operating status of FBSM
State and blocking, in positive switching state and equivalent according to the principle of equal effects of HBSM under negative sense switching state, but negative sense
It is equivalent to HBSM when switching and reversely accesses circuit, so that FBSM is equivalent to HBSM circuit by the principle of equal effects according to HBSM.This hair
It is bright under conditions of not reducing precision, the simulation velocity of FBSM-MMC in PSCAD/EMTDC can be accelerated.
Detailed description of the invention
It in order to illustrate the embodiments of the present invention more clearly, below will be to required use in embodiment or description of the prior art
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without any creative labor, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is one of a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule provided by the present application
The flow chart of embodiment；
Fig. 2 is the structure chart of full-bridge submodule FBSM；
Fig. 3 a and Fig. 3 b be when FBSM is in positive switching with equivalent process schematic diagram when negative sense switching；
Fig. 4 is FBSM variable resistance R1, R2 decision logic figure under positive switching state；
Fig. 5 is equivalent HBSM calculation flow chart；
Fig. 6 a and Fig. 6 b are equivalent schematic when FBSM bridge arm current is positive and is negative；
Fig. 7 is transition state variable resistance R1, R2 decision logic figure；
Fig. 8 is variable resistance R1, R2 decision logic figure under FBSM blocking；
Fig. 9 a and Fig. 9 b are equivalent FBSM model and its input interface figure in PSCAD/EMTDC；
Figure 10 a and Figure 10 b are the simulation accuracy of equivalent FBSM and device model in stateful switching and stateless switching
Comparison diagram.
Specific embodiment
The present invention provides a kind of modeling methods of the MMC electro-magnetic transient equivalent model of full-bridge submodule, for solving
The slow technical problem of FBSM-MMC simulation velocity, is first divided into normal operating condition and blocking for the operating status of FBSM.?
According to the principle of equal effects of HBSM under normal condition, in the lockout condition according to bridge arm current, FBSM external voltage and capacitance voltage
Size relatively determine its state being accurately in, thus carry out it is equivalent, with equivalent model carry out emulation can greatly improve
Simulation velocity.
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
Attached drawing in embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that disclosed below
Embodiment be only a part of the embodiment of the present invention, and not all embodiment.Based on the embodiments of the present invention, this field
Those of ordinary skill's all other embodiment obtained without making creative work, belongs to protection of the present invention
Range.
In order to make it easy to understand, referring to Fig. 1, a kind of equivalent mould of MMC electro-magnetic transient of full-bridge submodule provided by the present application
The working condition of one embodiment of the modeling method of type, full-bridge submodule FBSM is divided into forward direction according to the difference of control signal EN
Switching state, negative sense switching state and blocking；
Modeling method includes:
The working condition that FBSM is judged according to control signal EN, when controlling signal EN=1, FBSM is in positive switching shape
State, when controlling signal EN=-1, FBSM is in negative sense switching state, and when controlling signal EN=0, FBSM is in blocking；
Full-bridge submodule FBSM is equivalent to HBSM circuit according to the working condition of FBSM and calculates the circuit of HBSM circuit
Parameter obtains MMC electro-magnetic transient equivalent model.
Specifically, when FBSM is in positive switching state, it is equivalent to HBSM forward direction access circuit；FBSM is in negative sense switching
When state, then FBSM is equivalent to HBSM and reversely accesses circuit；FBSM is in locking operating status, then according to the electric current for flowing through FBSM
The positive and negative, end FBSM voltage and the size relation of capacitance voltage which height of FBSM present blocking at this time specifically judged
State (including positive charge state, positive big resistance states, negatively charged state and the big resistance states of negative sense), and FBSM by
Positive switching state or negative sense switching state, which are jumped between blocking, joined a kind of transition state.
Further, as shown in Fig. 2, full-bridge submodule FBSM includes IGBT1, IGBT2, IGBT3, IGBT4, diode
D1, diode D2, diode D3, diode D4 and capacitor C；
Diode D1, diode D2, diode D3, diode D4 anode respectively with IGBT1, IGBT2, IGBT3,
The emitter of IGBT4 connects, diode D1, diode D2, diode D3, diode D4 cathode respectively with IGBT1, IGBT2,
The collector of IGBT3, IGBT4 connects, and forms switching group T1, switching group T2, switching group T3, switching group T4, and the first of capacitor C1
End connection diode D1 cathode, the second end of capacitor C1 connect diode D2 anode, and the port of FBSM is denoted as N1 and N2, N1 connection
The emitter of IGBT, the collector of N2 connection IGBT4；
Positive switching state includes positive investment state and excision state, negative sense switching state include negative sense investment state and
Excision state；
If IGBT1, IGBT4 are connected, when IGBT2, IGBT3 are turned off, the capacitor of FBSM is in positive investment state, FBSM pairs
The voltage of outer performance is that submodule capacitor voltage is Vc；
If IGBT2, IGBT3 be connected, IGBT1, IGBT4 turn off when, the capacitor of FBSM be in negative sense put into state, FBSM pairs
The voltage of outer performance is the negative value-Vc of submodule capacitor voltage；
When IGBT1, IGBT3 conducting and IGBT2, IGBT4 turn off when either work as IGBT2, IGBT4 conducting and IGBT1,
When IGBT3 is turned off, capacitor is in excision state, and the voltage that FBSM is externally showed is 0；
When IGBT1, IGBT2, IGBT3, IGBT4 are turned off, FBSM is blocking.
That is, under normal operating conditions when, if T1, T4 be connected, T2, T3 turn off when, no matter current direction,
Capacitor is in positive investment state；If T2, T3 are connected, when T1, T4 are turned off, no matter current direction, capacitor is in negative sense throwing
Enter state.When T1, T3 are connected, T2, T4 shutdown or T2, T4 are connected, when T1, T3 are turned off, no matter current direction, at capacitor
In excision state.When regulation control signal EN=1, FBSM is in positive switching operating status；When EN=-1, FBSM is in negative sense
Switching operating status；When EN=0, FBSM is in locking operating status.
It can be seen from analyzing above as EN=1, FBSM exports 0 and Vc, can be equivalent to HBSM forward direction access circuit；
As EN=-1, FBSM output 0 and-Vc can be equivalent to HBSM negative sense access circuit；As EN=0, FBSM is according to current direction
It is positive and negative, export Vc and-Vc respectively.
Wherein FBSM is in as shown in Figure 3 with the equivalent process when negative sense switching when positive switching.The equivalent method of FBSM
For IGBT and anti-paralleled diode are equivalent to variable resistance.
Further, positive switching state includes positive investment state and excision state, and negative sense switching state includes negative sense
Investment state and excision state；
Following steps (as shown in Figure 4) is executed after controlling signal EN=1 and judging that FBSM is in positive switching state:
Judge whether the IGBT trigger signal F (i) of FBSM is equal to 1, if the IGBT trigger signal F (i) of FBSM is not equal to 1,
Then judge that FBSM is in excision state, judges that FBSM is in positive investment shape if the IGBT trigger signal F (i) of FBSM is equal to 1
State；
As shown in figure 4, FBSM can be equivalent to HBSM as EN=1.When R1 is small resistance, and R2 is big resistance, capacitor
In investment state；When R1 is big resistance, and R2 is small resistance, capacitor is in excision state.Variable resistance R1 when positive switching,
The judgement of R2 is as shown in Figure 4.Wherein, F (i) is submodule trigger signal, when F (i)=1, indicates that submodule puts into operation；F(i)
When=0, submodule excision is indicated.
It should be noted that F (i) expression is actually to be equivalent to the submodule entirety trigger signal after HBSM, such as F
(i)=1 T2 is turned off while what is indicated is T1 conducting.Fig. 3 (a) is please referred to, positive switching refers to that T3 is latched, when electric current is timing
By D4, when electric current is negative, T4 is conducted through T4, i.e. the circuit structure of FBSM at this time can be reduced to the form of Fig. 3 (a), quite
In a HBSM, T1 and T2 be practical control element at this time.And T1 and T2 always complementary conducting.Therefore F (i)=1 can be with
T2 is turned off while what is indicated is T1 conducting.Other situations can specifically be set around this principle.
Following steps are executed after trigger signal EN=1 judges that FBSM is in negative sense switching state:
Judge whether the IGBT trigger signal F (i) of FBSM is equal to 1, if the IGBT trigger signal F (i) of FBSM is not equal to 1,
Then judge that FBSM is in excision state, judges that FBSM is in negative sense investment shape if the IGBT trigger signal F (i) of FBSM is equal to 1
State；
It is similar when FBSM equivalent process is with positive switching state when FBSM is in negative sense switching state, only change
When submodule is put into, the incidence of capacitor.Its size resistance decision logic also with positive switching state when it is similar.Due at this time
Capacitor negative sense accesses circuit, illustrates that bridge arm current is less than 0 when bridge arm current is greater than 0 corresponding positive switching at this time.Therefore, size
Resistance decision logic only needs the iarm (t)<0 in decision block in Fig. 4 being changed to iarm (t)>0.
Full-bridge submodule FBSM, which is equivalent to HBSM circuit, according to the working condition of FBSM includes:
When judging the working condition of FBSM for positive switching state, full-bridge submodule FBSM is equivalent to HBSM forward direction and is connect
Enter circuit, when judging the working condition of FBSM for negative sense switching state, full-bridge submodule FBSM is equivalent to HBSM negative sense and is connect
Enter circuit.
Further, blocking includes that positive charge state, positive big resistance states, negatively charged state and negative sense are big
Resistance states；
Following steps are executed after judging that FBSM is in blocking according to trigger signal EN:
When the input current iarm (t) for judging FBSM is greater than 0, the end FBSM voltage u is judgediWhether capacitance voltage u is greater thanc,
If so, judging that FBSM is in positive charge state, if not.Then judge that FBSM is in positive big resistance states；
When judging the input current iarm (t) of FBSM no more than 0, by the end FBSM voltage uiTake negative value judgement-uiIt is whether big
In capacitance voltage uc, if so, judging that FBSM is in negatively charged state, if it is not, then judging that FBSM is in the big resistance shape of negative sense
State；
Full-bridge submodule FBSM, which is equivalent to HBSM circuit, according to the working condition of FBSM includes:
When judging the working condition of FBSM for positive charged state or positive big resistance states, by full-bridge submodule FBSM
It is equivalent to HBSM forward direction access circuit, when judging the working condition of FBSM for negative sense charged state or the big resistance states of negative sense,
Full-bridge submodule FBSM is equivalent to HBSM negative sense access circuit.
Under FBSM blocking, the trigger signal of all IGBT of FBSM is all 0, and equivalent circuit is as shown in Figure 6.Fig. 6
Thick line route is the possible path of circuit flowing, as seen from Figure 6:
A) when electric current iarm (t) > 0, if current path exists, due to the effect of diode, capacitor is electric by forward direction access
Road.Judge the size of the end FBSM voltage ui and capacitance voltage uc.As ui > uc, capacitor is then in positive charge state；When ui <
When uc, FBSM is in positive big resistance states.Therefore when electric current is timing, FBSM equivalent model is equivalent to HBSM equivalent model and connects
Enter circuit.
B) when electric current iarm (t) < 0, if current path exists, due to the presence of diode, capacitor is in parallel connection,
The end FBSM voltage is negative value at this time.As-ui > uc, capacitor is in negatively charged state；As-ui <uc, FBSM is in negative sense
Big resistance states.Therefore when electric current is negative, FBSM equivalent model is equivalent to HBSM equivalent model negative sense access circuit.
Wherein, R1 is small resistance, and R2 is big resistance or R1 is big resistance, and R2 is that small resistance indicates charged state；R1, R2 are equal
Big resistance states are indicated for big resistance.
Further, when the working condition of FBSM is converted to blocking from positive switching state or negative sense switching state
When, it executes following steps and carries out transition:
Enable flag=1, flag_1=1 and flag_2=1；
Judge whether flag is greater than 0, if so, carrying out in next step, if it is not, then transient process terminates；
Judge whether the input current iarm (t) of FBSM is greater than 0, if so, judging whether flag_1 is greater than 0, if it is not, sentencing
Whether disconnected flag_2 is greater than 0；
When judging result is that flag_1 is greater than 0, then the working condition of FBSM is judged for positive charged state and enables flag_
2=-1；When judging result is that flag_2 is greater than 0, then the working condition of FBSM is judged for negative sense charged state and enables flag_1
=-1；When judging result is that flag_1 is not more than 0 no more than 0 or flag_2, then flag=-1 is enabled；
It is returned after preset time and executes judge the step of whether flag is greater than 0, (i.e. each a period of time was just sentenced again
It is disconnected, such as it is per second judged, every millisecond judged, be equivalent to real-time judge).
Transition state, which refers to, to be added when FBSM jumps into blocking by normal operating condition in order to improve simulation accuracy.Its
Decision logic is shown in attached drawing 7.When entering blocking for the first time, flag=1 meets flag > 0 at this time, and circuit enters transition state,
Pass through the positive and negative further positive charge state or negative for judging FBSM and whether coming into transition state of bridge arm current again
To charged state.If iarm (t) > 0, further judge whether FBSM came into the negatively charged state of transition state,
If flag_1 > 0, indicate that FBSM had not entered the negatively charged state of transition state, FBSM enters the positive charge of transition state
State, and flag_2=-1 is enabled, so that FBSM is not jumped into the reverse charging state of transition state, if flag_1 < 0, then it represents that
FBSM came into the negatively charged state of transition state, enabled flag=-1, jumped out this transition state；If iarm (t) < 0,
Further judge whether FBSM came into the positive charge state of transition state, if flag_2 > 0, indicate FBSM not into
Enter the positive charge state of transition state, FBSM enters the negatively charged state of transition state, and enables flag_2=-1, makes
FBSM does not jump into the positive charge state of transition state, if flag_2 < 0, then it represents that FBSM was coming into transition state just
To charged state, flag=-1 is enabled, terminates transition state.
Further, the equivalent circuit parameter for calculating HBSM specifically includes:
IGBT and anti-paralleled diode are equivalent to variable resistance, wherein it is set as R1 with the concatenated variable resistance of capacitor C,
It is set as R2 with the whole variable resistance in parallel of capacitor C and R1；Specifically, when R1 is small resistance, and R2 is big resistance, show
The capacitor of HBSM is in investment state；When R1 is big resistance, and R2 is small resistance, the capacitor of HBSM is in excision state；It will be electric
Hold the equivalent circuit form that C is equivalent to current source parallel circuit.
The circuit parameter of HBSM circuit is calculated by formula group；
Formula group are as follows:
Wherein, iarm (t) is the input current of HBSM, ucFor capacitance voltage；IGBT and anti-paralleled diode etc. in HBSM
Effect is variable resistance, and the variable resistance being connected in series to the capacitor is set as R1, with capacitor and R1Whole variable resistance in parallel is set as
R2, when HBSM locking resistance states big in forward direction resistance states or negative sense greatly, R1And R2All value is big resistance；RcFor
The resistance of the corresponding equivalent Norton model of capacitor C, ICSFor the current source of the corresponding equivalent Norton model of capacitor C；ReqFor HBSM
The resistance of the equivalent Norton model of module, IeqFor the current source of the equivalent Norton model of HBSM submodule；T indicates current time,
The previous moment at t- Δ t expression simulation process current time.Specific calculation process is such as the formula calculation process in Fig. 5.In Fig. 5
Calculation formula (3) are not needed, are because formula (3) are the capacitor discrete time-domain difference formulas most started, it is split into formula
(6) it is executed respectively with formula (5), so without formula (3).
What R1 was indicated is the whole equivalent resistance of IGBT T1 and antiparallel diode D1 in Fig. 3, and there are two types of value feelings for it
Condition, perhaps very big 1000000 Europe or 0.001 Europe of very little, this is codetermined by trigger signal and bridge arm current, tool
The equivalent method of body is shown in that the meaning of Fig. 3, R2 and R1 are identical.That is, when R1 is big resistance, it can be with value for 1000000
Europe can be with value for 0.001 Europe when R1 is small resistance, which can specifically set as the case may be.Resistance R2
Similarly.
It should be noted that having with the resistance value of R1, R2 after the above-mentioned working condition for having judged FBSM and being associated with pass
System.
Specifically:
Wherein, positive charge state, positive big resistance states, negatively charged state and the big resistance states of negative sense are belonged to and are closed
Lock status, excision state had both belonged to positive switching state, also belonged to negative sense switching state.R1R2 resistance value in table only shows
Example, technical staff can carry out other values according to exact requirements and actual conditions, as long as guaranteeing electricity when value is small resistance
Resistance value is sufficiently small, and resistance value is sufficiently large when value is big resistance.
(a) or third circuit (b) in Fig. 3, capacitor C is equivalent at equivalent circuit, and a resistance Rc is in parallel
The form of one current source Ics, this is to calculate the voltage and current formula discrete difference differentiation of capacitor later.Req is indicated
Be the equivalent resistance being equivalent to entire submodule in (a) or the 4th circuit (b) in Fig. 3 after promise circuit, Ieq table
What is shown is the size of equivalent current source.What Uc (t) was indicated is the voltage at capacitor both ends, and ic (t) is the electric current for flowing through capacitor.u
What is indicated is the end voltage of submodule, and iarm (t) indicates to flow through the electric current of submodule.
After having built 21 level of FBSM-MMC, three end model in PSCAD, initial time controls signal EN=1, works as t=
2.986s when, EN=0.
(1) as EN=1, judge that FBSM is in positive switching state, it is equivalent equivalent identical as HBSM.First, in accordance with figure
4 judge the size of variable resistance R1, R2, then start to calculate according to calculation process shown in attached drawing 5.As EN=-1, it is only necessary to will
Iarm (t)<0 in Fig. 4 in decision block is changed to iarm (t)>0.
(2) as EN=0, judge that FBSM is in blocking, due to just entering blocking from normal operating condition, this
When FBSM should enter transition state.The decision logic of variable resistance R1, R2 is as shown in Fig. 7 at this time.
(3) when decision logic shown in 7 jumps out transition state with reference to the accompanying drawings, FBSM formally enters blocking at this time.
The decision logic of its variable resistance R1, R2 is as shown in Fig. 8 at this time.
The custom block of the above-mentioned equivalent FBSM of realization has been write in PSCAD/EMTDC.Custom block such as 9 institute of attached drawing
Show.Left end input is IGBT trigger signal and EN, and right end output is submodule capacitor voltage.Double-click the setting that can enter FBSM
The size of FBSM number of modules Yu submodule capacitor can be set in interface.
Since single-ended FBSM-MMC system puts into operation state without negative sense, in order to verify proposed FBSM equivalent model just
True property establishes single bridge arm MMC model in this example in PSCAD/EMTDC, and setting FBSM submodule number is 4, submodule capacitor
Be dimensioned to 3000uF.In PSCAD/EMTDC, the accuracy of equivalent model is compared with device model, identical
In the case where parameter, comparing result when FBSM statelessly switches and when stateful switching is as shown in Fig. 10.
Comparing result can be found from attached drawing 10, FBSM equivalent model and device model in capacitance voltage control effect, just
The simulation precision switched between normal state and blocking has met the application precision of normal MMC model.And equivalent model and device
The changed power trend that part builds model is completely the same, illustrates that equivalent model is full for the buffer action of system dc side failure
Sufficient required precision.Meanwhile equivalent model builds model with device in terms of controller operational effect and keeps height consistent, illustrates
Equivalent model has good compatibility for control system.
In order to verify the present invention for the validity of simulation accelerating, 7 level, 15 level, 21 have been built respectively in PSCAD
The single-ended model of level.It is as shown in the table the time required to emulating 1 second with device model:
The equivalent FBSM of table 2 and device model simulation velocity compare
As seen from Table 2, equivalent model has great superiority in terms of simulation velocity.And with the increasing of system scale
Greatly, the speed-raising effect of equivalent model is more obvious.No matter only there are two sections in systems for reaction because of the number of equivalent model level number
Point.And with the increase of system scale, increased number of nodes is significantly smaller than device model, so its simulation velocity mentions significantly
Height, and with the increase of system scale, this effect is obvious.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection scope of claim
Subject to.
The application provides a kind of embodiment of the modelling apparatus of the MMC electro-magnetic transient equivalent model of full-bridge submodule, described
Equipment includes processor and memory:
Said program code is transferred to the processor for storing program code by the memory；
The processor is used for a kind of full-bridge submodule according to instruction execution above-described embodiment in said program code
MMC electro-magnetic transient equivalent model modeling method.
The application provides a kind of computer readable storage medium, and the computer readable storage medium is for storing program generation
Code, said program code are used to execute a kind of modeling of the MMC electro-magnetic transient equivalent model of full-bridge submodule of above-described embodiment
Method.
The application provides a kind of computer program product including instruction, when run on a computer, so that described
Computer executes a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule of above-described embodiment.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although referring to before
Stating embodiment, invention is explained in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (9)
1. a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule, which is characterized in that the full-bridge submodule
The working condition of FBSM is divided into positive switching state, negative sense switching state and blocking according to the difference of control signal EN,
Middle forward direction switching state and negative sense switching state belong to normal operating condition；Blocking is divided into four sub- states: forward direction is filled
Electricity condition, positive big resistance states, negatively charged state and the big resistance states of negative sense；
The modeling method includes:
The working condition that FBSM is judged according to control signal EN, when controlling signal EN=1, FBSM is in positive switching state, when
FBSM is in negative sense switching state when controlling signal EN=-1, and when controlling signal EN=0, FBSM is in blocking；According to stream
The size relation of the positive and negative of electric current through FBSM, the end FBSM voltage and capacitance voltage judges to be in positive charge shape when FBSM locking
State, positive big resistance states, negatively charged state or the big resistance states of negative sense；In FBSM by positive switching state or negative sense
Switching state, which is jumped between blocking, joined a kind of transition state；
The full-bridge submodule FBSM is equivalent to HBSM circuit according to the working condition of FBSM and calculates the circuit of HBSM circuit
Parameter obtains MMC electro-magnetic transient equivalent model.
2. a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule according to claim 1, feature
It is, the full-bridge submodule FBSM includes IGBT1, IGBT2, IGBT3, IGBT4, diode D1, diode D2, diode
D3, diode D4 and capacitor C；
The diode D1, diode D2, diode D3, diode D4 anode respectively with IGBT1, IGBT2, IGBT3,
The emitter of IGBT4 connects, diode D1, diode D2, diode D3, diode D4 cathode respectively with IGBT1, IGBT2,
The collector of IGBT3, IGBT4 connects, and forms switching group T1, switching group T2, switching group T3, switching group T4, and the first of capacitor C1
End connection diode D1 cathode, the second end of capacitor C1 connect diode D2 anode, and the port of the FBSM is denoted as N1 and N2, N1
Connect the emitter of IGBT, the collector of N2 connection IGBT4；
The forward direction switching state includes positive investment state and excision state, negative sense switching state include negative sense investment state and
Excision state；
If IGBT1, IGBT4 are connected, when IGBT2, IGBT3 are turned off, the capacitor of FBSM is in positive investment state, and FBSM is to appearance
Existing voltage is that submodule capacitor voltage is Vc；
If IGBT2, IGBT3 are connected, when IGBT1, IGBT4 are turned off, the capacitor of FBSM is in negative sense investment state, and FBSM is to appearance
Existing voltage is the negative value-Vc of submodule capacitor voltage；
Either work as IGBT2, IGBT4 conducting and IGBT1, IGBT3 when IGBT1, IGBT3 conducting and IGBT2, IGBT4 shutdown
When shutdown, capacitor is in excision state, and the voltage that FBSM is externally showed is 0；
When IGBT1, IGBT2, IGBT3, IGBT4 are turned off, FBSM is blocking.
3. a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule according to claim 1, feature
It is, the forward direction switching state includes positive investment state and excision state, and negative sense switching state includes negative sense investment state
With excision state；
Following steps are executed after control signal EN=1 judges that FBSM is in positive switching state:
Judge whether the IGBT trigger signal F (i) of FBSM is equal to 1, if the IGBT trigger signal F (i) of FBSM is not equal to 1, sentences
Disconnected FBSM is in excision state, judges that FBSM is in positive investment state if the IGBT trigger signal F (i) of FBSM is equal to 1；
Following steps are executed after trigger signal EN=-1 judges that FBSM is in negative sense switching state:
Judge whether the IGBT trigger signal F (i) of FBSM is equal to 1, if the IGBT trigger signal F (i) of FBSM is not equal to 1, sentences
Disconnected FBSM is in excision state, judges that FBSM is in negative sense investment state if the IGBT trigger signal F (i) of FBSM is equal to 1；
The full-bridge submodule FBSM is equivalent to HBSM circuit by the working condition according to FBSM
When judging the working condition of FBSM for positive switching state, the full-bridge submodule FBSM is equivalent to HBSM forward direction and is connect
Enter circuit, when judging the working condition of FBSM for negative sense switching state, the full-bridge submodule FBSM is equivalent to HBSM and is born
To access circuit.
4. a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule according to claim 1, feature
It is, the blocking includes positive charge state, positive big resistance states, negatively charged state and the big resistance shape of negative sense
State；
Following steps are executed after judging that FBSM is in blocking according to trigger signal EN:
When the input current iarm (t) for judging FBSM is greater than 0, the end FBSM voltage u is judgediWhether capacitance voltage u is greater thancIf
It is then to judge that FBSM is in positive charge state, if it is not, then judging that FBSM is in positive big resistance states；
When judging the input current iarm (t) of FBSM no more than 0, by the end FBSM voltage uiTake negative value judgement-uiWhether electricity is greater than
Hold voltage uc, if so, judging that FBSM is in negatively charged state, if it is not, then judging that FBSM is in the big resistance states of negative sense；
The full-bridge submodule FBSM is equivalent to HBSM circuit by the working condition according to FBSM
When judging the working condition of FBSM for positive charged state or positive big resistance states, by the full-bridge submodule FBSM
It is equivalent to HBSM forward direction access circuit, when judging the working condition of FBSM for negative sense charged state or the big resistance states of negative sense,
The full-bridge submodule FBSM is equivalent to HBSM negative sense access circuit.
5. a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule according to claim 1, feature
It is, when the working condition of FBSM is converted to blocking from positive switching state or negative sense switching state, executes following
Step carries out transition:
Enable flag=1, flag_1=1 and flag_2=1；
Judge whether flag is greater than 0, if so, carrying out in next step, if it is not, then transient process terminates；
Judge whether the input current iarm (t) of FBSM is greater than 0, if so, judging whether flag_1 is greater than 0, if it is not, judgement
Whether flag_2 is greater than 0；
When judging result is that flag_1 is greater than 0, then the working condition of FBSM is judged for positive charged state and enables flag_2=-
1；When judging result is that flag_2 is greater than 0, then the working condition of FBSM is judged for negative sense charged state and enables flag_1=-1；
When judging result is that flag_1 is not more than 0 no more than 0 or flag_2, then flag=-1 is enabled；
It is returned after preset time and executes the step of whether flag is greater than 0 judged.
6. a kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule according to claim 1, feature
It is, the equivalent method of the HBSM circuit parameter specifically includes:
IGBT and anti-paralleled diode are equivalent to variable resistance, wherein being set as R1 with the concatenated variable resistance of capacitor C, with electricity
Hold the whole variable resistance in parallel of C and R1 and is set as R2；Specifically, when R1 is small resistance, and R2 is big resistance, show HBSM's
Capacitor is in investment state；When R1 is big resistance, and R2 is small resistance, the capacitor of HBSM is in excision state；Capacitor C is equivalent
For the equivalent circuit form of current source parallel circuit；
The circuit parameter of HBSM circuit is calculated by formula group；
The formula group are as follows:
Wherein, iarm (t) is the input current of HBSM, ucFor capacitance voltage；Be equivalent to can for IGBT and anti-paralleled diode in HBSM
Power transformation resistance, the variable resistance being connected in series to the capacitor are set as R1, with capacitor and R1Whole variable resistance in parallel is set as R2, R1And R2
Value according to working condition determine；RcFor the resistance of the corresponding equivalent Norton model of capacitor C, ICSIt is corresponding equivalent for capacitor C
The current source of Norton model；ReqFor the resistance of the equivalent Norton model of HBSM submodule, IeqFor the equivalent promise of HBSM submodule
The current source of model；T indicates current time, and t- Δ t indicates the previous moment at simulation process current time.
7. a kind of modelling apparatus of the MMC electro-magnetic transient equivalent model of full-bridge submodule, which is characterized in that the equipment includes place
Manage device and memory:
Said program code is transferred to the processor for storing program code by the memory；
The processor is used for according to a kind of full-bridge described in any one of claims 1-6 of the instruction execution in said program code
The modeling method of the MMC electro-magnetic transient equivalent model of submodule.
8. a kind of computer readable storage medium, which is characterized in that the computer readable storage medium is for storing program generation
Code, said program code require a kind of described in any item MMC electro-magnetic transients of full-bridge submodule of 1-6 equivalent for perform claim
The modeling method of model.
9. a kind of computer program product including instruction, which is characterized in that when run on a computer, so that the meter
Calculation machine perform claim requires a kind of described in any item modeling methods of the MMC electro-magnetic transient equivalent model of full-bridge submodule of 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811124762.7A CN109271717A (en) | 2018-09-26 | 2018-09-26 | A kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811124762.7A CN109271717A (en) | 2018-09-26 | 2018-09-26 | A kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109271717A true CN109271717A (en) | 2019-01-25 |
Family
ID=65197654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811124762.7A Pending CN109271717A (en) | 2018-09-26 | 2018-09-26 | A kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109271717A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769756A (en) * | 2020-07-10 | 2020-10-13 | 上海交通大学 | Single-phase half-bridge type multi-level inverter with double alternating current ports and construction and debugging method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103593521A (en) * | 2013-10-31 | 2014-02-19 | 南方电网科学研究院有限责任公司 | Efficient simulation modeling method for full-bridge cascading type multi-level converter |
| CN105045952A (en) * | 2015-05-29 | 2015-11-11 | 许继电气股份有限公司 | Multidimensional modeling method and simulation method for modular multilevel converter |
| CN105117549A (en) * | 2015-08-25 | 2015-12-02 | 浙江大学 | Equivalent simulation method based on clamping double sub-module MMC (modular multilevel converter) and considering various locking modes |
| CN105956323A (en) * | 2016-05-23 | 2016-09-21 | 华北电力大学 | Clamping double-sub-module type MMC (Modular Multilevel Converter) electromagnetic transient equivalent method |
| CN106407616A (en) * | 2016-11-11 | 2017-02-15 | 南方电网科学研究院有限责任公司 | Equivalent simulation method of full-bridge sub-module |
| US9893633B1 (en) * | 2016-03-23 | 2018-02-13 | The Florida State University Research Foundation, Inc. | Modular multilevel DC-DC converter and associated method of use |
-
2018
- 2018-09-26 CN CN201811124762.7A patent/CN109271717A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103593521A (en) * | 2013-10-31 | 2014-02-19 | 南方电网科学研究院有限责任公司 | Efficient simulation modeling method for full-bridge cascading type multi-level converter |
| CN105045952A (en) * | 2015-05-29 | 2015-11-11 | 许继电气股份有限公司 | Multidimensional modeling method and simulation method for modular multilevel converter |
| CN105117549A (en) * | 2015-08-25 | 2015-12-02 | 浙江大学 | Equivalent simulation method based on clamping double sub-module MMC (modular multilevel converter) and considering various locking modes |
| US9893633B1 (en) * | 2016-03-23 | 2018-02-13 | The Florida State University Research Foundation, Inc. | Modular multilevel DC-DC converter and associated method of use |
| CN105956323A (en) * | 2016-05-23 | 2016-09-21 | 华北电力大学 | Clamping double-sub-module type MMC (Modular Multilevel Converter) electromagnetic transient equivalent method |
| CN106407616A (en) * | 2016-11-11 | 2017-02-15 | 南方电网科学研究院有限责任公司 | Equivalent simulation method of full-bridge sub-module |
Non-Patent Citations (2)
| Title |
|---|
| JIABING HU等: "Improved Design and Control of FBSM MMC With Boosted AC Voltage and Reduced DC Capacitance", 《IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS》 * |
| 徐东旭等: "钳位双子模块型MMC的电磁暂态等效模型", 《电网技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769756A (en) * | 2020-07-10 | 2020-10-13 | 上海交通大学 | Single-phase half-bridge type multi-level inverter with double alternating current ports and construction and debugging method |
| CN111769756B (en) * | 2020-07-10 | 2023-11-07 | 上海交通大学 | Single-phase half-bridge type multi-level inverter with double alternating current ports and construction and debugging method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102780226B (en) | Direct-current-side voltage control method of cascaded STATCOM based on chopping-control voltage sharing and control circuit | |
| CN104734484B (en) | The simple start method of clamper Shuangzi module multilevel converter | |
| CN107872166B (en) | A kind of Model Predictive Control strategy of discrete inductance formula paralleling and interleaving inverter | |
| CN105071403B (en) | Reactive power compensator and control method based on dual H-bridge modular multilevel topology | |
| CN105787224A (en) | Non-circulation current simulation model for modularized multi-level current converter and modeling method of non-circulation current simulation model | |
| KR20190086564A (en) | Charging method of sub module based hybrid converter | |
| CN102110988A (en) | Method for expanding MMC-HVDC model simulation scale under RTDS | |
| CN113193766B (en) | Direct prediction control method and system for circulating current suppression of parallel converter cluster | |
| CN108667011A (en) | A kind of quick equivalent modeling methods of MMC for considering to start link | |
| CN107505524A (en) | Converter valve routine test circuit and test method | |
| CN108418192A (en) | A kind of direct current limiter and its control method for coordinating with dc circuit breaker | |
| CN108536949A (en) | LCC-HVDC simulation models and parameter optimization method based on inductance/capacitance switch models | |
| CN109586260A (en) | A kind of resistance sense type capacitor commutation blended learning and its control method | |
| CN103199719A (en) | Submodule capacitor voltage optimization equalizing method of modularization multi-level converter | |
| CN113030613A (en) | Direct-current transformer complete machine test system and method | |
| CN110943634A (en) | Energy type router and soft charging control method and system thereof | |
| CN105956323B (en) | Clamper Shuangzi modular type MMC electro-magnetic transient equivalent method | |
| Liu et al. | Research on MMC improved sub-module topology with DC fault ride-through and negative level output capability | |
| CN110739871A (en) | alternating current charging control strategy suitable for hybrid MMC under different working conditions | |
| CN109271717A (en) | A kind of modeling method of the MMC electro-magnetic transient equivalent model of full-bridge submodule | |
| CN109428340A (en) | A kind of emulation mode and system of flexible DC transmission device | |
| CN113285476A (en) | Method for judging stability of direct-current power distribution system containing alternating-current and direct-current micro-grid | |
| CN102340259B (en) | Novel instantaneous-current-direct-control-based pulse width modulation current tracking control method | |
| CN106887946A (en) | Reactive power compensator based on modularization multi-level converter | |
| CN107482928B (en) | A kind of D.C. high voltage transmission modularization multi-level converter and its control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190125 |