CN109264700A - A method of graphene is prepared from graphene oxide - Google Patents

A method of graphene is prepared from graphene oxide Download PDF

Info

Publication number
CN109264700A
CN109264700A CN201811492933.1A CN201811492933A CN109264700A CN 109264700 A CN109264700 A CN 109264700A CN 201811492933 A CN201811492933 A CN 201811492933A CN 109264700 A CN109264700 A CN 109264700A
Authority
CN
China
Prior art keywords
graphene oxide
graphene
low layer
layer number
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811492933.1A
Other languages
Chinese (zh)
Other versions
CN109264700B (en
Inventor
李星
刘长虹
蔡雨婷
漆长席
蒋虎南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daying Juneng Science And Technology Development Co Ltd
Sichuan Polychuang Graphene Technology Co Ltd
Original Assignee
Daying Juneng Science And Technology Development Co Ltd
Sichuan Polychuang Graphene Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daying Juneng Science And Technology Development Co Ltd, Sichuan Polychuang Graphene Technology Co Ltd filed Critical Daying Juneng Science And Technology Development Co Ltd
Priority to CN201811492933.1A priority Critical patent/CN109264700B/en
Publication of CN109264700A publication Critical patent/CN109264700A/en
Application granted granted Critical
Publication of CN109264700B publication Critical patent/CN109264700B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/184Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/198Graphene oxide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00Structure or properties of graphene
    • C01B2204/04Specific amount of layers or specific thickness
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00Structure or properties of graphene
    • C01B2204/20Graphene characterized by its properties
    • C01B2204/30Purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

The present invention provides a kind of methods for preparing graphene from graphene oxide, which comprises prepares low layer number graphene oxide;Low layer number graphene oxide is restored, obtains low layer number graphene, wherein preparing low layer number graphene oxide includes: to be dispersed in water graphene oxide, and form graphene oxide hydrogel;Graphene oxide hydrogel is placed at the first temperature and the first pressure, so that the hydrone in graphene oxide hydrogel is congealed into ice and molecule and sublimates, obtain the graphene oxide of low layer number;It include: that low layer number graphene oxide is obtained into low layer number graphene by self gravity sequence experience temperature and pressure differential responses area to the reduction of low layer number graphene oxide.The present invention obtains low layer number graphene oxide by the method being freeze-dried, and will not destroy the structure of oxidized graphite flake layer, preferably preservation functional group;It can make full use of graphene and melt the high feature of boiling point, metal, the nonmetallic inclusion in graphene can be removed.

Description

A method of graphene is prepared from graphene oxide
Technical field
The present invention relates to technical field of new material preparation, more specifically, are related to one kind from graphene oxide and prepare graphite The method of alkene.
Background technique
Currently, the graphene preparation method of mainstream has mechanical stripping method, oxidation-reduction method, epitaxial growth method, chemical vapor Sedimentation etc., wherein oxidation-reduction method due to its is low in cost, production equipment is simple, single yield is maximum, in gas producing formation manifold, The advantages that lateral dimension is uniform becomes industrialized production most popular method.But in the method for preparing graphene, on the one hand, use The graphene of oxidation-reduction method preparation, since during aoxidizing intercalation, the crystal structure of its own is easily broken, and is led It causes graphene internal flaw to increase, significantly affects the performance of graphene;On the other hand, it is produced using oxidation-reduction method Graphene there is also a large amount of metals, nonmetallic inclusion, this also further affects large-scale development and the application of graphene.
Summary of the invention
It is above-mentioned existing in the prior art it is an object of the present invention to solving for the deficiencies in the prior art One or more problems.For example, one of the objects of the present invention is to provide one kind can serialization using graphene oxide prepare stone The method of black alkene.
To achieve the goals above, of the invention to provide a kind of method for preparing graphene from graphene oxide, it is described Method may comprise steps of: prepare low layer number graphene oxide;Low layer number graphene oxide is restored, low layer number stone is obtained Black alkene, wherein described the step of preparing low layer number graphene oxide includes: that containing functional group and will contain with first number of plies The graphene oxide of metal impurities and/or nonmetallic inclusion is dispersed in water, and forms graphene oxide hydrogel;Stone will be aoxidized Black alkene hydrogel is placed at the first temperature and the first pressure, the molecule so that hydrone in graphene oxide hydrogel congeals into ice And sublimate, to obtain the graphene oxide with second number of plies, first number of plies is ten several layers to tens of layers, described second The number of plies is less than first number of plies, and first temperature is not higher than -50 DEG C and temperature change is no more than ± 4 DEG C, described first Pressure is lower than 1 atmospheric pressure and pressure change is no more than ± 100Pa;Described the step of restoring to low layer number graphene oxide, wraps It includes: low layer number graphene oxide being undergone into vertically arranged the i-th reaction zone and the n-th reaction zone by gravity sequence, is obtained Graphene, and the temperature of n-th reaction zone and pressure are controlled as TnAnd Pn, by the temperature of i-th reaction zone and Pressure is controlled as TiAnd Pi, wherein Ti=w1·i/n·Tn, Pi=(P0-Pn) (1-i/n), wherein w10.80~ It is selected between 1.20, P0Indicate 1 standard atmospheric pressure, TnAnd PnRespectively 1250 DEG C or more and 30Pa~500Pa, n is natural number And >=2, i gets all natural numbers less than n.
In an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention, first number of plies It can be 20 layers~30 layers, second number of plies can be 5 layers~7 layers.
In an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention, first temperature It can be selected within the scope of -55~-65 DEG C and temperature change is no more than ± 2 DEG C.
In an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention, first pressure It can be selected in the range of 10~100Pa and pressure change is no more than ± 10Pa.
In an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention, the graphite oxide The solid content of alkene hydrogel can be 0.1~50wt%.
It is described to low layer number in an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention Graphene oxide restore the step of may include: by low layer number graphene oxide by gravity sequence undergo it is vertically arranged The i-th reaction zone and jth reaction zone of first reaction member, and the temperature of i-th reaction zone and pressure are controlled as Ti And Pi, the temperature of the jth reaction zone and pressure are controlled as TjAnd Pj, obtain first material;By first material by weight Power sequence of operation undergoes the m reaction zone and the n-th reaction zone of the second vertically arranged reaction member, and the m is reacted The temperature and pressure in area are controlled as TmAnd Pm, the temperature of n-th reaction zone and pressure are controlled as TnAnd Pn, receive Collect graphene, wherein the Ti=w1·i/n·Tn, Pi=(P0-Pn) (1-i/n), Tj=k1·j/n·Tn, Pj=(P0- Pn) (1-j/n), the i gets all natural numbers less than or equal to j, and j is natural number and >=1, w1And k10.80~ The T is selected between 1.20m=w2·m/n·Tn, Pm=(P0-Pn) (1-m/n), the m gets greater than j and is less than or equal to All natural numbers of n, n are natural number and n >=2, w2It is selected between 0.80~1.20, P0Indicate 1 standard atmospheric pressure, TnWith PnRespectively 1250 DEG C or more and 30Pa~500Pa.
In an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention, the metal impurities It can be one of iron, manganese, potassium and sodium or a variety of, the nonmetallic inclusion can be one or both of sulphur, silicon.
It is described to low layer number in an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention The step of graphene oxide restores can also include that air-flow is passed through into reaction zone to control the low layer number graphene oxide and exist Decrease speed in reaction zone.
It is described to low layer number in an exemplary embodiment for preparing the method for graphene from graphene oxide in the present invention The step of graphene oxide restores can also include the steps that recycling the metal impurities and/or nonmetallic inclusion.
Compared with prior art, the beneficial effect comprise that
(1) present invention obtains the graphene oxide of low layer number by the method being freeze-dried, and will not destroy oxidized graphite flake Layer structure, preferably preservation functional group, it is freeze-dried after graphite oxide be not susceptible to agglomeration;
(2) dry greater than other drying means by the lamella interlamellar spacing of freeze-dried obtained low layer number graphene oxide Graphene oxide product after dry has superior dispersion performance, the less number of plies and bigger specific surface area;
(3) present invention using high-temperature low-pressure make under different temperature, pressure region by force the graphene oxide of low layer number according to It reacts by self gravity experience reaction zone, graphene is prepared, take full advantage of graphene and melt the high feature of boiling point;? In low pressure environment, metal, the nonmetallic inclusion in graphene can be removed by high temperature, and remove graphene oxide institute simultaneously A large amount of oxygen-containing functional groups of band, repair graphene oxide during the preparation process caused by SP3Hydridization defect;
(4) present invention can pre-process to reduce energy consumption graphene oxide in lower temperature region, can effectively close Reason utilizes waste heat, can significantly improve reduction efficiency, can be realized the continuous production of graphene;
(5) the low layer number graphene impurity content that the present invention is prepared is low, and fault of construction is few, and the number of plies is lower, comprehensive It can be excellent.
Detailed description of the invention
By the description carried out with reference to the accompanying drawing, above and other purpose of the invention and feature will become more clear Chu, in which:
The process for the method that the slave graphene oxide that Fig. 1 shows an illustrative embodiment of the invention prepares graphene is shown It is intended to.
Fig. 2 shows an illustrative embodiment of the invention to the reaction zone in low layer number graphene oxide reduction step Arrangement schematic diagram.
Specific embodiment
Hereinafter, it will be described in detail in conjunction with attached drawing and exemplary embodiment according to the present invention a kind of from graphite oxide The method that alkene prepares graphene.
The process for the method that the slave graphene oxide that Fig. 1 shows an illustrative embodiment of the invention prepares graphene is shown It is intended to.Fig. 2 shows an illustrative embodiment of the invention to the reaction zone cloth in low layer number graphene oxide reduction step Set schematic diagram.
The present invention provides a kind of methods for preparing graphene from graphene oxide, of the invention from graphene oxide system In one exemplary embodiment of the method for standby graphene, as shown in Figure 1, the method may include:
Step S100 prepares low layer number graphene oxide using freeze-drying method.
Step S200 makes the graphene oxide of the low layer number react in different reaction zones, obtains low layer number Graphene.
Specifically, described to use freeze-drying method for step S100, prepare low layer number graphene oxide Step may include:
Step S110 forms graphene oxide hydrogel.
Graphene oxide with first number of plies is dispersed in water, and forms graphene oxide hydrogel.Wherein, described First number of plies can be for ten several layers to tens of layers, for example, 20~30 layers.Contain oxygen-containing functional group in graphene oxide.For example, institute State the graphene oxide with first number of plies can be by being prepared using Bronsted acid intercalated graphite.In dispersion process, preferably Further strengthen dispersion effect by ultrasonic disperse, thus make hydrone well into the lamellar structure to graphene oxide or In person's fold, or with the functional groups of surface of graphene oxide graphene oxide hydrogel is formed at hydrated ion.Oxidation Graphene hydrogel, which has, is combined with structure of water molecules in the lamella or fold of the graphene oxide of its own.Aoxidize stone The solid content of black alkene hydrogel can be 0.1~50wt%.Water for dispersing graphene oxide is preferably secondary deionized water.
The graphene oxide of first number of plies can contain metal and/or nonmetallic inclusion.The metal impurities can be with It is combined including one or more of iron, manganese, potassium, sodium etc..The nonmetallic inclusion may include one of impurity such as sulphur, silicon Or two kinds of combinations.The processing for passing through low-voltage high-temperature environment in step s 200, can will contain above-mentioned in low layer number graphite Impurity is removed.
The graphene oxide of first number of plies can be containing including one in carboxyl, hydroxyl, carbonyl, ehter bond and epoxy group Kind or a variety of functional groups.
Step S120 carries out cryogenic vacuum freeze-drying to graphene oxide hydrogel.
Graphene oxide hydrogel is placed at the first temperature and the first pressure, so that the water in graphene oxide hydrogel Molecule, which congeals into ice, molecule and sublimates, to obtain the graphene oxide with second number of plies to get to low layer number graphite oxide Alkene.Also, the first temperature is controlled as not higher than -50 DEG C and the temperature change of the first temperature is no more than ± 4 DEG C always, the first pressure It is controlled as by force being no more than ± 100Pa always lower than the variation of 1 atmospheric pressure and the first pressure.Further, the first temperature can With the selection within the scope of -55~-65 DEG C and temperature change is no more than ± 2 DEG C.First pressure can be in the range of 10~100Pa It selects and pressure change is no more than ± 10Pa.
Wherein, second number of plies is less than first number of plies.Under second number of plies can have significantly compared to first number of plies Drop.Here, second number of plies can be the 1/3~1/6 of first number of plies.For example, second number of plies can be 5~7 layers.
It is not higher than 1 standard atmospheric pressure by being not higher than -50 DEG C and by the control of the first pressure by the control of the first temperature, Hydrone can be made to become ice molecule, by volume expansion, further widen the lamellar structure of graphite;And ice is low in low temperature The volatilization that can sublimate is depressed, temperature is low, and " entropy " value is low, and the structure for enabling to graphene oxide to be softened is maintained, and makes to prepare Graphene oxide composite material good dispersion, large specific surface area.Moreover, by relative constant cryogenic temperature (for example, not higher than- 50 DEG C and control the intracorporal temperature change of chamber of entire cold dry chamber and be no more than ± 4 DEG C) and relative constant vacuum degree (for example, low In 1 atmospheric pressure and the entire intracorporal pressure change of chamber of control is no more than ± 100Pa), is conducive to the rate of set for making hydrone It is relatively stable with degree, therefore, to " strutting " effect stability of graphene oxide layer;And be conducive to the speed of sublimating for making ice molecule Degree and degree are relatively stable, therefore, are also beneficial to avoid office caused by the local stress because of graphene oxide layer to a certain degree Portion's defect.It further says, by the control climate of cold dry chamber is temperature at -55~-65 DEG C by control temperature unit and pressure control unit In range and the entire intracorporal temperature change of chamber of control is no more than ± 2 DEG C and pressure is controlled in 10~100Pa and controlled entire The intracorporal pressure change of chamber is no more than ± 10Pa, is more conducive to stablizing the rate of set of hydrone and degree further, from And to " strutting " effect stability of graphene oxide layer;And be conducive to make ice molecule sublimate speed and degree it is further steady It is fixed, to be also beneficial to further avoid local defect caused by the local stress because of graphene oxide layer.
Specifically, for step S200, low layer number graphite is prepared by restoring low layer number graphene oxide May include: in the exemplary embodiment of the step of alkene
The gravity that the graphene oxide of low layer number is utilized to itself, sequentially undergoes vertically arranged along vertical direction I-th reaction zone and the n-th reaction zone, obtain graphene.Wherein, n is natural number and >=2, i gets all natural numbers less than n.
The reaction zone is respectively arranged with different temperature and pressure, is allowed by the temperature and pressure that control differential responses area Graphene oxide is reacted.The temperature and pressure of n-th reaction zone are controlled as TnAnd Pn.The TnIt can be 1250 Value in DEG C range above, further, the temperature TnIt can be 1700 DEG C~2500 DEG C, further, the temperature Tn It can be 1700 DEG C~2200 DEG C.The pressure PnIt can be 30Pa~500Pa, further, the pressure PnIt can be 60Pa ~100P, further, the pressure PnIt can be 85Pa~95Pa.
The temperature T of i-th reaction zoneiIt indicates, pressure PiIt indicates.The temperature TiIt can be Ti=w1·i/n· Tn, wherein w1It is selected between 0.80~1.20, further, w1It can be selected between 0.85~1.14, for example, w1It can be with Take 0.98.The pressure PiIt can be Pi=(P0-Pn) (1-i/n), wherein P0Indicate 1 standard atmospheric pressure.For example, by institute It states graphene oxide and undergoes 3 vertically arranged reaction zones respectively.The temperature and pressure of 3rd reaction zone be respectively 1500 DEG C and 100Pa.According to above-mentioned temperature and pressure formula, w is taken1The temperature for being the 0.9, the 1st reaction zone is T1=0.9 × 1/3 × 1500= 450 DEG C, pressure P1=(1.01 × 105- 100) (1-1/3)=0.67 × 105Pa, the temperature of the 2nd reaction zone are T2=0.9 × 2/3 × 1500=900 DEG C, pressure P1=(1.01 × 105- 100) × (1-2/3)=0.34 × 105Pa。
For reaction time of the graphene oxide in each reaction zone can based on experience value or actual field operate into Row determines.For example, it is assumed that the reaction time in the n-th reaction zone is tn, then the reaction time of the i-th reaction zone can be ti=r1· i/n·tn, the r1It can be selected between 0.9~1.1.
For step S200, by restoring the step of low layer number graphene is prepared in low layer number graphene oxide May include: in one exemplary embodiment
Step S210, as shown in Fig. 2, the first reaction member is added in low layer number graphene oxide.First reaction is single Member includes j vertically arranged reaction zone.Each reaction zone in the j reaction zone is adjacent in the vertical direction respectively to be set It sets.The low layer number graphene oxide relies on self gravity, since the 1st reaction zone of the first reaction member, sequence experience the The i-th reaction zone and jth reaction zone of one reaction member, the i get all natural numbers less than or equal to j, j be natural number and ≥1.By the temperature T for controlling the i-th reaction zoneiWith the pressure P of the i-th reaction zonei, the temperature T of jth reaction zonejWith jth reaction zone Pressure PjLow layer number graphene oxide is handled, first material is obtained.
The Ti=w1·i/n·Tn, Pi=(P0-Pn) (1-i/n), Tj=k1·j/n·Tn, Pj=(P0-Pn)·(1- J/n), w1And k1Selected between 0.80~1.20.Further, the w1And k1It can be selected between 0.87~1.17, For example, w1And k1It can be 0.96.
More than, when i is equal with j, i.e. the first reaction member only has a reaction zone.
First material is added in the second reaction member step S220, and the first material relies on the gravity of itself, sequence Undergo the m reaction zone and the n-th reaction zone being arranged in second reaction member.By the temperature T for controlling m reaction zonem With pressure Pm, the temperature T of the n-th reaction zonenWith pressure Pn, graphene is prepared.N-m+1 in second reaction member Reaction zone is disposed adjacent in the vertical direction.Wherein, the Tm=w2·m/n·Tn, Pm=(P0-Pn) (1-m/n), the m All natural numbers of n are got greater than j and are less than or equal to, n is natural number and n >=2, w2It is selected between 0.80~1.20, P0Table Show 1 standard atmospheric pressure, TnAnd PnRespectively 1250 DEG C or more and 30Pa~500Pa.Further, the w2It can be 0.88 It is selected between~1.17, for example, w2It can be 0.99.
The temperature TnIt can be 1250 DEG C or more, such as 1250 DEG C~2500 DEG C, further, the temperature TnIt can be with It is 1700 DEG C~2200 DEG C.The pressure PnIt can be 30Pa~500Pa, further, the pressure PnCan be 60Pa~ 100Pa。
More than, undergo each reaction zone to all have the sufficient time in order to preferably control low layer number graphene oxide It is reacted, when being declined by the low layer number graphene oxide self gravity, due to the reaction ginseng of each area setting Number is different, will there is the different reaction time in each area.When needing longer there are some or certain several reaction zone reactions Between when, may will result in reaction zone needs excessive height, cause the preparation cost of equipment to increase, operate have difficulties. Therefore, n reaction zone of low layer number graphite oxide alkene reaction can be carried out segmentation and set by the excessive height of equipment in order to prevent It sets.For example, as shown in Figure 1, n reaction zone, which is respectively set, becomes two reaction members.It include j inside first reaction member Jth of a reaction zone, i.e. low layer number graphene oxide the sequence experience from the first reaction member the 1st reaction zone to the first reaction member Reaction zone.Then, the obtained first material after jth reaction zone will be undergone to be added in the second reaction member, it is single from the second reaction 1st reaction zone of member starts, and sequence undergoes n-m+1 reaction zone of the second reaction member, after undergoing the n-th reaction zone, instead It should finish to obtain graphene.
The first material can be low layer number graphene oxide, graphene or low layer number graphene oxide and graphene Mixture.Due to that can be configured with the reaction member number in the first reaction member, if anti-in the first reaction member Answer number setting in area's more, also, theoretically speaking, functional group can be removed at 1000 DEG C of temperature or more, but in this temperature The impurity contained in graphene cannot be effectively removed down, and therefore, first material may be graphene.When the first reaction member The reaction zone of setting is few, and removal oxygen-containing functional group is not achieved in the final reaction zone temperature that may will have the first reaction member Purpose, first material at this time may be low layer number graphene oxide.Certainly, if reaching the temperature of abjection functional group, But undergoing the time of the first reaction member shorter, first material may be the mixing of graphene Yu low layer number graphene oxide Object.
It, can be with when the first material for obtaining the first reaction member jth reaction zone is added into second reaction zone First material is transported in the channel that a low pressure is arranged, and second unit is added in first material by way of sucking In, certainly, first material Adding Way of the invention is without being limited thereto, for example, also may be used using elevating mechanism addition.
More than, since the impurity such as iron, manganese, potassium, sodium, sulphur, silicon may be contained in the graphene oxide of low layer number.In the present invention High-temperature low-pressure environment under, the metal impurities and nonmetallic inclusion contained in graphene oxide are with gas under high-temperature low-pressure environment The form of state is volatilized away.At high temperature, such as under 2000 DEG C or so of hot conditions, it can achieve in graphene oxide and contain The fusing point and boiling point of some metal impurities and nonmetallic inclusion, to be separated from graphene oxide.Further, certain low Pressure, the fusing point and boiling point of metal impurities and nonmetallic inclusion can reduce further, the temperature that is arranged through the invention and Vacuum degree is easy to the metal impurities and nonmetallic inclusion contained in removal graphene oxide.Contain in graphene oxide of the invention The type of some metals and nonmetallic inclusion is not limited to above-described impurity, other can under high temperature and pressure of the invention energy The impurity enough to volatilize.The reaction being arranged through the invention, ferro element and manganese element in the low layer number graphene being prepared Content can achieve less than 20PPm.In the existing method for preparing graphene, the content of preparation-obtained graphene is generally all In 2000PPm or more, the present invention can effectively reduce the impurity iron contained in graphene, can preferably be used in as lithium Ion battery conductive additive.
For temperature T is arranged in any one exemplary embodiment of step S200nOr TmIt is good for 1250 DEG C or more It is in if temperature is lower than 1250 DEG C, the volatilization for being unfavorable for impurity is gone out, and fusing point and the boiling of certain impurity may be not achieved Point.For example, the temperature of setting can be 1250 DEG C~2500 DEG C.If the temperature of setting of the invention is higher than 2800 DEG C, temperature Too it is high may loss to stove it is serious, energy consumption is larger, higher cost, also, higher temperature will lead to and be prepared The specific surface area of low layer number graphene becomes smaller.Further, temperature TnOr TmIt can be 2200 DEG C.Since 2200 DEG C be carbon Material graphitization temperature, and also help the self-defect for repairing graphene oxide.Pressure P is setnIt is good for 30Pa~500Pa It is under above-mentioned pressure vacuum degree, the fusing point and boiling point for the impurity that graphene oxide contains are lower, it is easier to which volatilization is gone It removes.
For in any one exemplary embodiment of step S200, in the n-th reaction zone and in the reaction of m reaction zone Time can be 60min~600min.Since the n-th reaction zone and m reaction zone are each reaction member temperature highest, pressure The smallest reaction zone is the main reaction region of graphene oxide.If heating time is lower than 60min, possible graphene oxide adds The hot time is inadequate, cannot adequately remove impurity;Heating time is higher than 600min, and heating time is too long, and energy consumption consumption is too big.Into One step, heating time is 120min~300min.
For in any one exemplary embodiment of step S200, since the graphene oxide of first number of plies may Containing including one of carboxyl, hydroxyl, carbonyl, ehter bond and epoxy group or a variety of functional groups.Above-mentioned oxygen-containing functional group is at this It invents the high temperature being arranged and carbon dioxide and water can be decomposed under pressure conditions, can effectively remove in graphene oxide Oxygen-containing functional group.Theoretically speaking can be removed functional group at 1000 DEG C of temperature and vacuum environment of the invention, but Be due to impurity removal temperature it is higher, the temperature that the present invention is arranged should be higher than 1250 DEG C.Certainly, of the invention to contain Oxygen functional group is without being limited thereto, and carbon dioxide and water can be decomposed at temperature and pressure of the invention.
For in any one exemplary embodiment of step S200, on the one hand, in order to preferably control the height of reaction zone Degree in the reasonable scope, when needing the longer reaction time, avoids the reaction zone excessive height of setting;On the other hand, in order to more Good control low layer number graphene oxide can be realized and add according to real reaction progress in the time of the reaction of reaction zone Fast or reduction time of the low layer number graphene oxide by reaction zone.In order to achieve the above object, the preparation method can be with Including being passed through air-flow into reaction zone, such as it is passed through inert gas, cooperated with the gravity of low layer number graphene oxide itself, To control the decrease speed of low layer number graphene oxide in the reaction region.When one timing of height of reaction zone setting, if necessary Low layer number graphene oxide reacts longer time in the reaction, then needs to slow down the decrease speed of low layer number graphene oxide, The direction of air-flow flowing at this time can be set to decline with low layer number graphene oxide contrary.When not needing low layer number oxygen When the reaction time of graphite alkene in the reaction region is too long, the direction of air-flow can be set to under low layer number graphene oxide The direction of drop is consistent, can increase the decrease speed of low layer number graphene oxide.
Since the impurity in graphene oxide can be at the temperature and pressure conditions that the present invention is arranged in gaseous form Volatilization is gone out, and therefore, can be recycled to the metal impurities and/or nonmetallic inclusion of volatilization.
In conclusion the present invention utilizes the gravity of graphene oxide itself, by the way that different humidity province and pressure is arranged Strong area completes the preparation of graphene, avoids the even problem of uneven heating in the reaction process of graphene oxide, does not need making Additional ancillary equipment is provided during standby to transport (oxidation) graphene, preparation efficiency height, it can be achieved that graphene company Continuous production.The present invention contains the molten boiling point difference of impurity using graphene with it, by the way that different humidity province and pressure area is arranged, Subregion reaction, while effectively removing impurity, can repair the SP in graphene oxide3Fault of construction and to remove its oxygen-containing Functional group, and then the higher high-quality graphene of purity is prepared.Temperature range appropriate can make the SP in graphene oxide3 Fault of construction is repaired, then is aided with low pressure condition, can remove a large amount of oxygenated functional groups of graphene oxide institute band, and Metal and/or nonmetallic inclusion can be removed from graphene oxide in the form of a vapor.Different temperature and pressure area are set, A pretreatment can be carried out to graphene oxide, be can be realized energy-efficient effect, be can be realized the continuous production of graphene. Make graphite oxide alkene reaction under the conditions of low pressure, can reduce the fusing point and boiling point of impurity in graphene oxide, and then reduce Requirement of the preparation process to temperature can achieve the effect of energy conservation and cost squeeze.
Although those skilled in the art should be clear above by combining exemplary embodiment to describe the present invention Chu can carry out exemplary embodiment of the present invention each without departing from the spirit and scope defined by the claims Kind modifications and changes.

Claims (9)

1. a kind of method for preparing graphene from graphene oxide, which is characterized in that the described method comprises the following steps:
Prepare low layer number graphene oxide;
Low layer number graphene oxide is restored, low layer number graphene is obtained, wherein
Described the step of preparing low layer number graphene oxide includes:
The graphene oxide containing functional group and containing metal impurities and/or nonmetallic inclusion with first number of plies is dispersed in In water, and form graphene oxide hydrogel;
Graphene oxide hydrogel is placed at the first temperature and the first pressure, so that the hydrone in graphene oxide hydrogel It congeals into ice and molecule and sublimates, to obtain the graphene oxide with second number of plies, first number of plies is ten several layers to number Ten layers, second number of plies be less than first number of plies, first temperature be not higher than -50 DEG C and temperature change be no more than ± 4 DEG C, first pressure is lower than 1 atmospheric pressure and pressure change is no more than ± 100Pa;
It is described to low layer number graphene oxide restore the step of include:
Low layer number graphene oxide is undergone into vertically arranged the i-th reaction zone and the n-th reaction zone by gravity sequence, is obtained Graphene, and the temperature of n-th reaction zone and pressure are controlled as TnAnd Pn, by the temperature of i-th reaction zone and Pressure is controlled as TiAnd Pi,
Wherein, Ti=w1·i/n·Tn, Pi=(P0-Pn) (1-i/n), wherein w1It is selected between 0.80~1.20, P0Indicate 1 A standard atmospheric pressure, TnAnd PnRespectively 1250 DEG C or more and 30Pa~500Pa, n is natural number and >=2, i gets the institute less than n There is natural number.
2. the method according to claim 1 for preparing graphene from graphene oxide, which is characterized in that first number of plies It is 20 layers~30 layers, second number of plies is 5 layers~7 layers.
3. the method according to claim 1 for preparing graphene from graphene oxide, which is characterized in that first temperature It is selected within the scope of -55~-65 DEG C and temperature change is no more than ± 2 DEG C.
4. the method according to claim 1 for preparing graphene from graphene oxide, which is characterized in that first pressure It is selected in the range of 10~100Pa and pressure change is no more than ± 10Pa.
5. the method according to claim 1 for preparing graphene from graphene oxide, which is characterized in that the graphite oxide The solid content of alkene hydrogel is 0.1~50wt%.
6. the method according to claim 1 for preparing graphene from graphene oxide, which is characterized in that described to low layer number Graphene oxide restore the step of include:
By low layer number graphene oxide by gravity sequence undergo the first vertically arranged reaction member the i-th reaction zone and Jth reaction zone, and the temperature of i-th reaction zone and pressure are controlled as TiAnd Pi, by the temperature of the jth reaction zone T is controlled as with pressurejAnd Pj, obtain first material;
First material is undergone to m reaction zone and the n-th reaction of the second vertically arranged reaction member by gravity sequence Area, and the temperature of the m reaction zone and pressure are controlled as TmAnd Pm, by the temperature and pressure of n-th reaction zone It is controlled as TnAnd Pn, collect graphene, wherein
The Ti=w1·i/n·Tn, Pi=(P0-Pn) (1-i/n), Tj=k1·j/n·Tn, Pj=(P0-Pn)·(1-j/ N), the i gets all natural numbers less than or equal to j, and j is natural number and >=1, w1And k1Selected between 0.80~1.20 It selects
The Tm=w2·m/n·Tn, Pm=(P0-Pn) (1-m/n), the m gets greater than j and all less than or equal to n Natural number, n are natural number and n >=2, w2It is selected between 0.80~1.20, P0Indicate 1 standard atmospheric pressure, TnAnd PnRespectively 1250 DEG C or more and 30Pa~500Pa.
7. the method according to claim 1 for preparing graphene from graphene oxide, which is characterized in that the metal impurities For one of iron, manganese, potassium and sodium or a variety of, the nonmetallic inclusion is one or both of sulphur, silicon.
8. the method as claimed in any of claims 1 to 7 for preparing graphene from graphene oxide, feature exist In described the step of restoring to low layer number graphene oxide further includes being passed through air-flow into reaction zone to control low layer number oxidation stone The decrease speed of black alkene in the reaction region.
9. the method as claimed in any of claims 1 to 7 for preparing graphene from graphene oxide, feature exist In described the step of restoring to low layer number graphene oxide further includes returning to the metal impurities and/or nonmetallic inclusion The step of receipts.
CN201811492933.1A 2018-12-07 2018-12-07 Method for preparing graphene from graphene oxide Active CN109264700B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811492933.1A CN109264700B (en) 2018-12-07 2018-12-07 Method for preparing graphene from graphene oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811492933.1A CN109264700B (en) 2018-12-07 2018-12-07 Method for preparing graphene from graphene oxide

Publications (2)

Publication Number Publication Date
CN109264700A true CN109264700A (en) 2019-01-25
CN109264700B CN109264700B (en) 2021-03-09

Family

ID=65187176

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811492933.1A Active CN109264700B (en) 2018-12-07 2018-12-07 Method for preparing graphene from graphene oxide

Country Status (1)

Country Link
CN (1) CN109264700B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103058179A (en) * 2013-01-21 2013-04-24 张家港市东大工业技术研究院 Method for preparing spongy graphene oxide by using freeze-drying method
CN106809821A (en) * 2017-01-19 2017-06-09 广东烛光新能源科技有限公司 The preparation method of Graphene
CN206705681U (en) * 2017-04-18 2017-12-05 青岛华高墨烯科技股份有限公司 A kind of continous way graphene microwave reduction stove

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103058179A (en) * 2013-01-21 2013-04-24 张家港市东大工业技术研究院 Method for preparing spongy graphene oxide by using freeze-drying method
CN106809821A (en) * 2017-01-19 2017-06-09 广东烛光新能源科技有限公司 The preparation method of Graphene
CN206705681U (en) * 2017-04-18 2017-12-05 青岛华高墨烯科技股份有限公司 A kind of continous way graphene microwave reduction stove

Also Published As

Publication number Publication date
CN109264700B (en) 2021-03-09

Similar Documents

Publication Publication Date Title
CN106477539A (en) A kind of preparation method of ultra-thin graphite phase carbon nitride
CN108033441A (en) The preparation method and grapheme material of a kind of grapheme material
CN103613093B (en) A kind of hydrogen reducing prepares the method for Graphene
CN106219525B (en) A kind of preparation method of expanded graphite paper
CN104445153A (en) Method for macroscopic quantity preparation of carbon nano coil from graphene
CN105692600A (en) Preparation method of super-soft and lightweight graphene electro-thermal film
CN110655056B (en) Preparation method of porous nano silicon-carbon composite material
CN111559743B (en) Preparation method and application of graphene powder
CN112225209B (en) Method for preparing graphene by using expandable graphite
CN109264700A (en) A method of graphene is prepared from graphene oxide
CN109305674B (en) Method for preparing graphene by using graphene oxide with low impurity content
CN115231557B (en) Graphene film and preparation method thereof
CN110668433A (en) Method for preparing graphite/graphene composite material by supercritical carbon dioxide fluid and application
CN113488376B (en) Two-dimensional silicon dioxide and preparation method and application thereof
CN109319772A (en) A kind of porous fluorinated graphene and preparation method thereof, application
CN109860558A (en) A kind of lithium ion battery graphene-iron oxide film and the preparation method and application thereof
CN109292762B (en) Production method of low-structure-defect graphene
CN111422857B (en) Graphene nano-bubble material, preparation method and application thereof, adsorbent, catalyst, optical material and energy storage material
CN109264699A (en) A kind of low layer number graphene preparation method
CN109264710B (en) Method for improving quality of graphene oxide
CN109264701B (en) Graphene and continuous production method thereof
CN109305671B (en) Method for preparing graphene by using low-layer graphene oxide
CN109455704B (en) Graphene continuous production system
CN109264702B (en) Graphene preparation method, graphene and preparation system thereof
CN109292764B (en) Preparation method of low-impurity-content graphene

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant