CN109256160A - A kind of spin(-)orbit square magnetic memory read method - Google Patents
A kind of spin(-)orbit square magnetic memory read method Download PDFInfo
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Abstract
The present invention discloses a kind of spin(-)orbit square magnetic memory read method, and steps are as follows: S1, will read signal function in spin(-)orbit square magnetic memory data cells to be read, records the first data-signal that the data cell generates；S2, apply the heavy metal film that auxiliary signal acts on data cell, the data cell is made to be in temporary stable state；The size relation of S3, the second data-signal and the first data-signal that are generated according to the data cell under temporary stable state, read the information of the data cell；S4, information is read according to step S3, data cell is reverted into the state before reading from temporary stable state.The method of the present invention eliminates the influence of device technology error compared to traditional self-reference method, ensure that the reliability of reading data；Simplify control complexity and circuit structure；Reduce device loss；Reading speed is faster.
Description
[technical field]
The invention belongs to non-volatile memory technologies field more particularly to a kind of spin(-)orbit square magnetic memory reading sides
Method.
[background technique]
Spin(-)orbit square magnetic tunnel-junction (Spin orbit torque magnetic tunnel junction, SOT-
It MTJ) is a kind of resistive memory based on tunnel magneto effect, by the height of resistance value states, to indicate binary system
Information, therefore can be used for constructing non-volatile spin(-)orbit square magnetic RAM (Spin orbit torque
magnetic random access memory,SOT-MRAM).According to the difference of easy axis and film surface direction, SOT-
MTJ can be divided into two kinds: (In-plane) magnetic anisotropy SOT-MTJ (I-SOT-MTJ) and vertical (Perpendicular) in face
Magnetic anisotropy SOT-MTJ (P-SOT-MTJ).P-SOT-MTJ storage density, write-in power consumption, in terms of be better than
I-SOT-MTJ, therefore receive wider concern, structure and circuit symbol are respectively as shown in Figure 1A and Figure 1B.P-SOT-
MTJ can complete the reliable data write operation of high speed by logic gates (Spin-Hall effect, SHE), overcome
Conventional spin shifts initial time delay existing for square magnetic tunnel-junction (Spin transfer torque MTJ, STT-MTJ)
The problem of (Incubation delay) and potential barrier puncture, while the non-volatile of STT-MTJ is remained, it is anti-radiation, it is resistance to erasable
The advantages that, thus be expected to become next-generation low-power consumption storage unit.
The data cell of SOT-MRAM is made of SOT-MTJ and corresponding access transistor, and the reading of data is logical
It crosses and detects the height of MTJ resistance value in its data cell and be achieved.Existing P-SOT-MTJ read method is generally divided into two classes:
The first kind compares the voltage value that they are accordingly generated by applying identical electric current (or voltage) to data cell and reference unit
The height of (or current value) judges the information of data cell；Second class by carrying out to same data cell, " write by reading-reference
Enter-comparing reading-is written again " operation, carry out self-reference reading.Reduce however as process, process deviation increases, and deposits
The standard deviation of storage unit and reference unit resistance value increases, so that the reliability decrease of first kind read method；Second quasi-tradition is certainly
With reference to method high reliablity in first kind method, but since it is desired that write operation twice, lead to higher read latch and serious
Device lifetime is lost, in addition, the operation window (Margin) for reading electric current during " comparing reading " is extremely limited, controls difficulty
It is high.Therefore above-mentioned two classes method is unable to satisfy the demand of the reading performance under submicron-scale.
[summary of the invention]
Aiming at the problem that performances such as reading reliability, speed and the control complexity mentioned in above-mentioned background are difficult to take into account,
The invention discloses a kind of spin(-)orbit square magnetic memory read methods.The method overcome the deficiencies in the prior art, utilize device
The advantages that part intrinsic attribute generates self-generated reference signal, has high reliablity, and control complexity is low, and device loss is small, and speed is fast.
The technical scheme is that a kind of spin(-)orbit square magnetic memory read method, the method includes following steps
It is rapid:
S1, signal function will be read in spin(-)orbit square magnetic memory data cells to be read, records the data sheet
The first data-signal that member generates；
When the reading signal is current signal, the first data-signal is a voltage signal, can be by voltage sampling circuit
Record its amplitude；When the reading signal is voltage signal, the first data-signal is a current signal, can be by current sample electricity
Road records its amplitude.
S2, apply the heavy metal film 14 that auxiliary signal acts on data cell, the data cell is made to be in temporary stable state；
The auxiliary signal specifically: logic gates electric current, direction and amplitude are to fix not during application
Become, can simplify reading control complexity and circuit structure；The temporary stable state refers to that the resistance value of the data cell is temporarily steady
The intermediate resistance value being scheduled between its high and low resistance value.
The size relation of S3, the second data-signal and the first data-signal that are generated according to the data cell under temporary stable state,
Read the information of the data cell；
Second data-signal is produced under the same reading signal function of step S1 by the data cell under temporary stable state
It is raw, it is same type electric signal with the first data-signal, the size relation of their amplitudes can be judged via comparison circuit；
If the second data-signal is greater than the first data-signal, judge data cell for low resistance state；Conversely, if the second data
Signal then judges data cell for high-impedance state less than the first data-signal；Low resistance state can represent storage information as " 0 ", high-impedance state
It is " 1 " that storage information, which can be represented, or vice versa, i.e., high-impedance state, which can represent, stores information as " 0 ", and low resistance state can represent storage
Information is " 1 ".
S4, information is read according to step S3, data cell is reverted into the state before reading from temporary stable state.
It is described that data cell is reverted into the state before reading from temporary stable state, specifically:
The reading information of S41, obtaining step S3 data cell；
S42, according to the reading information of step S3 data cell, determine the spin-transfer torque for restoring the required application of data
(STT) current direction；If reading information is low resistance state, applied STT current direction is it is ensured that write data cell as low-resistance
State, i.e. the two of the magnetic tunnel-junction ferromagnetic layer direction of magnetization are parallel to each other；If reading information is high-impedance state, applied STT current
Direction is it is ensured that write data cell as high-impedance state, the i.e. mutual rather parallel of the two of the magnetic tunnel-junction ferromagnetic layer direction of magnetization；
S43, the auxiliary signal that step S2 is applied is removed, while applies the restoring current for having determined that direction in step S42,
Data cell is reverted into the state before reading from temporary stable state.
A kind of the advantages of spin(-)orbit square magnetic memory read method of the present invention, is:
(1) present invention generates self-generated reference signal using device intrinsic attribute, eliminates the influence of device technology error, guarantees
The reliability of reading data.
(2) compared to traditional self-reference method, twi-read electric current (voltage) can be used identical amplitude, do not need the present invention
It is accurately sized, simplifies control complexity and circuit structure.
(3) present invention has only carried out primary recovery write-in behaviour compared to traditional self-reference method in entire reading process
Make, and used auxiliary signal acts on heavy metal film, and without device itself, reduce device loss.
(4) present invention induces spin(-)orbit square, write efficiency ratio using auxiliary signal compared to traditional self-reference method
Other Nonvolatile resistance variation devices are high, and the generation of self-generated reference signal and the recovery of data unit information, therefore this can be rapidly completed
The reading speed of invention is faster.
[Detailed description of the invention]
Figure 1A is the structural schematic diagram of P-SOT-MTJ device.
Figure 1B is P-SOT-MTJ circuit symbol figure.
Fig. 2A is that the direction of magnetization of MTJ free layer defines figure.
Fig. 2 B is logic gates function of current schematic diagram.
Fig. 3 is a kind of spin(-)orbit square magnetic memory reading method diagram proposed by the present invention.
Fig. 4 is an a kind of specific embodiment of spin(-)orbit square magnetic memory read method proposed by the present invention.
Fig. 5 is according to embodiment of the present invention, for realizing the circuit diagram of the specific embodiment.
Wherein, map parameter is defined as:
11: the first ferromagnetic layers；
12: barrier layer；
13: the second ferromagnetic layers；
14: heavy metal film；
21: the fixing layer direction of magnetization；
22: the free layer direction of magnetization；
23: the electronics spun up；
24: spin downward electronics；
41: reading control module in periphery；
42: storage array；
43: signal sampling module；
44: signal decision module；
45: data recovery module；
T1-T3: it is followed successively by the first, second, and third electrode；
SHE: logic gates are the abbreviation of Spin-Hall Effect；
STT: spin-transfer torque is the abbreviation of Spin Transfer Torque；
θ: polar angle of the free layer direction of magnetization in reference axis；
Azimuth of the free layer direction of magnetization in reference axis；
σ: the electron spin unit vector of free layer is injected into because of logic gates；
SR: the reading signal that selected data cell generates；
Sd_1: the signal obtained after sampling for the first time；
Sd_2: the signal obtained after second of sampling；
BL: bit line is the abbreviation of Bit Line；
WL: wordline is the abbreviation of Word Line；
TG1-TG8: being followed successively by transmission gate 1-8, and TG is the abbreviation of Transmission Gate；
Iread: flow through the reading electric current of data cell；
C1: for sampling SRFirst capacitor of signal；
C2: for sampling SRSecond capacitor of signal；
VDD: power supply voltage；
Vout1: the output signal of one end of signal decision module, with Vout2Logic low and high level each other；
Vout2: the output signal of one end of signal decision module, with Vout1Logic low and high level each other；
[specific embodiment]
Referring to attached drawing, substantive distinguishing features of the invention are further illustrated.Detailed exemplary embodiment is disclosed,
Specific CONSTRUCTED SPECIFICATION and function detail are only that the purpose for indicating description example embodiment therefore can be with many selectable
Form implements the present invention, and the present invention is not construed as the example embodiment for being limited only to herein propose, but answers
All changes, equivalent and the refill that the covering is fallen within the scope of the present invention.In addition, will not be described in detail or will omit
Well-known element of the invention, device and sub-circuit, in order to avoid obscure the correlative detail of the embodiment of the present invention.
Figure 1A is the structural schematic diagram of P-SOT-MTJ device；Figure 1B is P-SOT-MTJ circuit symbol figure.
As shown in Figure 1A, P-SOT-MTJ device is constituted by four layers from top to bottom, successively are as follows: the first ferromagnetic layer 11, barrier layer
12, the second ferromagnetic layer 13 and heavy metal film 14.The upper end of first ferromagnetic layer 11 is coated with first electrode T1, heavy metal film 14
Both ends be coated with second electrode T2 and third electrode T3 respectively.First ferromagnetic layer 11, barrier layer 12 and the second ferromagnetic layer 13 composition
Mtj structure is made on 14 top of heavy metal film.According to two ferromagnetic layer easy magnetization axis directions, MTJ can be divided into magnetic in face
Two class of anisotropy and perpendicular magnetic anisotropic.In Figure 1A, easy axis is vertical with film surface, so being perpendicular magnetic respectively to different
Property MTJ.Wherein the direction of magnetization of the first ferromagnetic layer 11 is constant, referred to as fixing layer；The direction of magnetization of second ferromagnetic layer 13 can
Parallel with the first ferromagnetic layer 11 or antiparallel two kinds of orientations, referred to as free layer is presented.More specifically, working as fixing layer and freedom
When the layer direction of magnetization is parallel, low resistance is presented in MTJ；When antiparallel, high value is presented in MTJ, therefore can store binary message.
P-SOT-MTJ realizes the transformation of resistance states, the specific implementation side of one of pure electricity by spin(-)orbit square
Formula is to utilize to flow through logic gates (SHE) electric current of heavy metal film 14 and flow through spin-transfer torque (STT) electric current of MTJ
It is common to complete write operation, as shown in Figure 1B.Wherein, SHE electric current can induce spin(-)orbit square, in the write-in initial stage, make MTJ
The free layer direction of magnetization is overturn rapidly by vertical direction to direction in face.However, individually SOT cannot achieve determining overturning,
This is because vertically upward and vertically downward, two states direction in face is equivalent, thus when the free layer direction of magnetization is overturn
In to face behind direction, SHE electric current need to be removed, final reverses direction is determined by STT current.In Figure 1B, it is assumed that fixing layer magnetic
Change the vertical heavy metal film 14 in direction upwards, then when SHE electric current flows to the end T3 (or flowing to the end T2 from the end T3) from the end T2, if
STT current flows to the end T2 (or flow to the end T3 from T1) from the end T1, and MTJ becomes high value；If STT current flows to the end T1 from the end T2
(or flow to the end T1 from T3), MTJ becomes low resistance.
Fig. 2A is that the direction of magnetization of MTJ free layer defines figure.
Without loss of generality, it is assumed that the fixing layer direction of magnetization 21 is along reference axis z-axis positive direction, the free layer direction of magnetization 22 and coordinate
The polar angle of axis and azimuth be denoted as respectively for θ withWhen θ=0 °, MTJ is in low resistance and uses RPIt indicates；When θ=180 °, MTJ is in
High value simultaneously uses RAPIndicate, then can be calculated as follows to obtain MTJ tunnel magneto rate (Tunnel Magnetoresistance,
TMR),
Particularly, if the TMR value under zero-bias is denoted as TMR0, then the actual resistance R of MTJMTJIt can be calculated as follows:
Wherein, V indicates MTJ bias voltage, VhIndicate that TMR value becomes TMR0Bias voltage when half.Above formula shows MTJ
Actual resistance RMTJIt is the function of bias V and polar angle θ.
Fig. 2 B is logic gates function of current schematic diagram.
SHE electric current can be not only used for write operation, also can be used as the auxiliary signal in reading process.As shown in Figure 2 B,
When SHE electric current flows through heavy metal film 14, the electronics 23 spun up can be made and the downward electronics 24 that spins is along z-axis two sides etc.
Amount aggregation, causes the strong Effect of Spin-orbit Coupling of heavy metal material, induces spin(-)orbit square, makes the MTJ free layer direction of magnetization
It is overturn rapidly by vertical direction to direction in face (that is, θ=90 °).Later, if continuing to be passed through SHE electric current, free layer can be made to magnetize
Direction is temporarily retained in direction in face, and according to formula (2), the resistance value of MTJ is about the intermediate resistance value between high and low resistance value at this time,
It can be used as the reference resistance value of data read operation.Using this intrinsic attribute, self-generated reference signal can be generated by device itself,
Realize high reliability, the reading data of high speed.
Fig. 3 is a kind of spin(-)orbit square magnetic memory reading method diagram proposed by the present invention.
In step sl, signal function will be read in spin(-)orbit square magnetic memory data cells to be read, record institute
State the first data-signal of data cell generation.
In this step, when the reading signal is current signal, the first data-signal is a voltage signal, can be by voltage
Sample circuit records its amplitude；When the reading signal is voltage signal, the first data-signal is a current signal, can be by electricity
Stream sample circuit records its amplitude.
In step s 2, apply the heavy metal film 14 that auxiliary signal acts on data cell, make at the data cell
In temporary stable state；
In this step, the auxiliary signal specifically: logic gates electric current, direction and amplitude are during application
It is fixed and invariable, can simplify reading control complexity and circuit structure；The temporary stable state refers to the resistance of the data cell
It is worth intermediate resistance value of the temporary stabilization between its high and low resistance value.
In step s3, the second data-signal and the first data-signal generated according to the data cell under temporary stable state it is big
Small relationship reads the information of the data cell；
In this step, second data-signal be by the data cell under temporary stable state step S1 same reading signal
Effect is lower to be generated, and is same type electric signal with the first data-signal, can judge that the size of their amplitudes is closed via comparison circuit
System；
If the second data-signal is greater than the first data-signal, judge data cell for low resistance state；Conversely, if the second data
Signal then judges data cell for high-impedance state less than the first data-signal；Low resistance state can represent storage information as " 0 ", high value
Storage information can be represented as " 1 ", or vice versa.
In step s 4, information is read according to step S3, data cell is reverted into the state before reading from temporary stable state.
It is described that data cell is reverted into the state before reading from temporary stable state in this step, specifically:
The reading information of S41, obtaining step S3 data cell；
S42, according to the reading information of step S3 data cell, determine the spin-transfer torque for restoring the required application of data
(STT) current direction；If reading information is low resistance state, applied STT current direction is it is ensured that write data cell as low-resistance
State, i.e. the two of the magnetic tunnel-junction ferromagnetic layer direction of magnetization are parallel to each other；If reading information is high-impedance state, applied current direction
It is ensured that being write data cell as high-impedance state, the i.e. mutual rather parallel of the two of the magnetic tunnel-junction ferromagnetic layer direction of magnetization；
S43, the auxiliary signal that step S2 is applied is removed, while applies the restoring current for having determined that direction in step S42,
Data cell is reverted into the state before reading from temporary stable state.
In above-mentioned read method, under the auxiliary signal effect of such as logic gates electric current, the intrinsic category of device is utilized
Property generate self-generated reference signal, not only speed also eliminates the influence of device technology error up to subnanosecond grade, ensure that reading
Reliability.Compared to traditional self-reference method, on the one hand, auxiliary signal used by this method acts on heavy metal film 14,
And without device itself, reduce device loss；On the other hand, the reading process of entire " stable state-temporarily stable state-stable state " only phase
It is operated when in write-once, therefore speed is faster, loss is lower, and power consumption is smaller.
Fig. 4 is an a kind of specific embodiment of spin(-)orbit square magnetic memory read method proposed by the present invention.
A kind of spin(-)orbit square magnetic memory read module of the present embodiment reads control module 41, one by a periphery
The signal decision module 44 of signal sampling module 43, one of storage array 42, one and a data recovery module 45 form.It
Between position connection relationship and signal trend be: periphery read control module 41 with remaining each module be connected, for controlling
Signal and auxiliary signal are read in entire reading process and offer；Storage array 42 is connected with 43 input terminal of signal sampling module,
The data-signal generated in the case where reading signal function is provided；44 input terminal of 43 output end of signal sampling module and signal decision module
It is connected, is used for sampled data signal, output applies the first data-signal and the second data-signal generated before and after auxiliary signal；Letter
Number 44 output end of judging module is connected with 45 input terminal of data recovery module, compares the first data-signal of judgement and the second data letter
Number size relation, output data read information；45 output end of data recovery module is connected with storage array 42, believes according to reading
Corresponding data unit is reverted to the state before reading from temporary stable state by breath.
Fig. 5 is according to embodiment of the present invention, for realizing the circuit diagram of the specific embodiment.
This circuit is identical as Fig. 4 structure.Wherein, periphery reads control module 41 and provides each module control signal, reads letter
Number IreadAnd auxiliary signal SHE electric current；Storage array 42 is made of m × n data cell and corresponding access transistor, is passed through
Bit line BL and wordline WL can choose unit to be read；The sampled data signal before and after applying auxiliary signal of signal sampling module 43
SRAnd obtain the first data-signal Sd_1With the second data-signal Sd_2；Signal decision module 44 receives Sd_1And Sd_2, compare judgement
Their size is simultaneously amplified to logic level, and complementary output reads result Vout1And Vout2；Data recovery module 45 receives Vout1With
Vout2, restoring current is generated according to information is read, after removing auxiliary signal SHE electric current, by restoring current by data cell
The state before reading is reverted to from temporary stable state.
More specifically, the data read process of the specific embodiment of the invention can be divided into following four steps:
(1) in the case where the manipulation of control module 41 is read in periphery, signal I will be readreadIt acts in storage array 42 and is selected
Spin(-)orbit square magnetic memory data cells, the sampling of signal sampling module 43 data voltage signal S at this timeR, and be recorded as
First data-signal Sd_1。
(2) apply the auxiliary signal SHE function of current in the heavy metal film 14 of data cell, data cell is made to be in temporarily steady
State.Since the resistance value of data cell is changed, signal S is readRCan correspondingly it change.
(3) in identical reading electric current IreadUnder, the S after the sampling change of signal sampling module 43R, it is denoted as the second data-signal
Sd_2, and by Sd_1And Sd_2It exports to signal decision module 44；Signal decision module 44 compares Sd_1And Sd_2Size relation and put
Greatly to logic level, the information of the data cell is read；If Sd_2Greater than Sd_1, data cell is judged for low resistance state, and storage is believed
Breath is logical zero；If Sd_2Less than Sd_1, data cell is judged for high-impedance state, and storage information is logical one.
(4) data recovery module 45, which obtains, reads information；According to information is read, the STT current direction for restoring data is determined；
If reading information is low resistance state, STT current direction is the direction that data cell is write as to parastate；If reading information is height
Resistance state, then STT current direction is the direction that data cell is write as to antiparallel states；Auxiliary signal SHE electric current is removed later,
Data cell is reverted to the state before reading from temporary stable state by the STT current for applying determining direction simultaneously.
It should be appreciated that the physical circuit that described above and Fig. 5 is provided is only a kind of preferred embodiment of the invention, this
The those of ordinary skill in field according to the present invention can conceive without creative work makes many modifications and variations.Cause
This, all within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in the present invention
Protection scope within.
Claims (6)
1. a kind of spin(-)orbit square magnetic memory read method, it is characterised in that: the method includes the following steps:
S1, signal function will be read in spin(-)orbit square magnetic memory data cells to be read, records the data cell and produces
The first raw data-signal；
S2, apply the heavy metal film that auxiliary signal acts on data cell, the data cell is made to be in temporary stable state；
The size relation of S3, the second data-signal and the first data-signal that are generated according to the data cell under temporary stable state, read
The information of the data cell；
S4, information is read according to step S3, data cell is reverted into the state before reading from temporary stable state.
2. a kind of spin(-)orbit square magnetic memory read method according to claim 1, it is characterised in that: institute in step S1
State read signal be current signal when, the first data-signal be a voltage signal, its amplitude can be recorded by voltage sampling circuit；When
When the reading signal is voltage signal, the first data-signal is a current signal, its amplitude can be recorded by current sampling circuit.
3. a kind of spin(-)orbit square magnetic memory read method according to claim 1, it is characterised in that: the auxiliary letter
Number specifically: logic gates electric current, direction and amplitude are fixed and invariable during application.
4. a kind of spin(-)orbit square magnetic memory read method according to claim 1, it is characterised in that: the temporary stable state
Refer to intermediate resistance value of the resistance value temporary stabilization of the data cell between its high and low resistance value.
5. a kind of spin(-)orbit square magnetic memory read method according to claim 1, it is characterised in that: second number
It is believed that number being generated under the same reading signal function of step S1 by the data cell under temporary stable state, it is with the first data-signal
Same type electric signal judges the size relation of their amplitudes via comparison circuit；If the second data-signal is greater than the first data
Signal then judges data cell for low resistance state；Conversely, if the second data-signal judges data sheet less than the first data-signal
Member is high-impedance state；It is " 0 " that low resistance state, which can represent storage information, and high-impedance state, which can represent, stores information as " 1 ", or vice versa,
I.e. high-impedance state can represent storage information as " 0 ", and low resistance state can represent storage information as " 1 ".
6. a kind of spin(-)orbit square magnetic memory read method according to claim 1, it is characterised in that: described in step S4
Data cell is reverted into the state before reading from temporary stable state, specifically:
The reading information of S41, obtaining step S3 data cell；
S42, according to the reading information of step S3 data cell, determine the spin-transfer torque electric current for restoring the required application of data
Direction；If reading information is low resistance state, applied spin-transfer torque current direction it is ensured that write data cell as low resistance state,
That is two ferromagnetic layer direction of magnetizations of magnetic tunnel-junction are parallel to each other；If reading information is high-impedance state, applied spin-transfer torque
Current direction is it is ensured that write data cell as high-impedance state, the i.e. mutual rather parallel of the two of the magnetic tunnel-junction ferromagnetic layer direction of magnetization；
S43, the auxiliary signal that step S2 is applied is removed, while applies the restoring current for having determined that direction in step S42, will counted
The state before reading is reverted to from temporary stable state according to unit.
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| CN109872741A (en) * | 2019-01-25 | 2019-06-11 | 中山大学 | A kind of non-volatile Boolean logic framework of the multivoltage control based on magnetic tunnel-junction |
| CN110391331A (en) * | 2019-07-05 | 2019-10-29 | 北京航空航天大学 | A kind of magnetism analog-digital converter |
| CN110427170A (en) * | 2019-07-05 | 2019-11-08 | 北京航空航天大学 | A kind of full adder based on spin(-)orbit square |
| CN111596891A (en) * | 2020-05-09 | 2020-08-28 | 北京航空航天大学 | True random number generating device and generating method |
| WO2021036446A1 (en) * | 2019-08-30 | 2021-03-04 | 浙江驰拓科技有限公司 | Test structure and test method |
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| CN111596891A (en) * | 2020-05-09 | 2020-08-28 | 北京航空航天大学 | True random number generating device and generating method |
| CN111596891B (en) * | 2020-05-09 | 2023-07-28 | 北京航空航天大学 | True random number generating device and generating method |
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