CN109254338A - A kind of 19.5nm multi-layer mirror - Google Patents
A kind of 19.5nm multi-layer mirror Download PDFInfo
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- CN109254338A CN109254338A CN201811258124.4A CN201811258124A CN109254338A CN 109254338 A CN109254338 A CN 109254338A CN 201811258124 A CN201811258124 A CN 201811258124A CN 109254338 A CN109254338 A CN 109254338A
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- layer
- film layer
- semiconductor film
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
Abstract
The invention discloses a kind of 19.5nm multi-layer mirrors comprising: substrate, alternately superimposed layer, cap layers, the alternately superimposed layer are arranged in institute's substrate, and the cap layers setting is on alternately superimposed layer；The alternately superimposed layer includes: semiconductor film layer and replaces the molybdenum film layer being superposed with the semiconductor film layer, and the semiconductor film layer replaces superposition multilayer with the molybdenum film layer altogether.19.5nm multi-layer mirror disclosed by the invention has the advantages that resistance to high energy particle irradiation and solar radiation.
Description
Technical field
The present invention relates to optical film technology fields, more particularly to a kind of 19.5nm multi-layer mirror.
Background technique
Understand solar-terrestrial environment and its influence to terrestrial space weather and weather to be that explore one of modern science is important ask
Topic.The activities such as solar flare, the coronal mass ejection of the sun are an important factor for influencing terrestrial space weather and weather.Therefore, people
A large amount of imaging research has been done to the extreme ultraviolet in solar radiation spectrum.Wherein, Ⅻ spectral line (wavelength 19.5nm) of ferro element
It is one of solar spectrum imaging detection important goal, such as SUVI, TXI, EIT and TRACE.They make in imaging optical system
With the Mo/Si multilayer film of normal incidence.In order to guarantee the pure of imaging spectral, it is desirable that the multilayer film should have higher in 19.5nm
Normal incidence reflectivity, bandwidth is also small as far as possible.It is limited to minimum film forming physical thickness, in above-mentioned model, what is used is more
Tunic most narrow bandwidth is 1nm, wherein minimum scale of the Mo in periodic thickness be 0.15, wherein periodic thickness refer to single molybdenum and
The thickness of silicon and.Simultaneously as space environment is wanted there are a large amount of high energy particle (proton, electronics etc.) and solar irradiation etc.
Seeking the film of preparation has certain stability, that is, is resistant to high energy particle and solar irradiation.
In the X-EUV solar imager that China is developing will also imaging detection be carried out to 19.5nm spectral line.Wherein, just enter
The reflectivity and bandwidth requirement for penetrating multilayer film are as above-mentioned model.We also need to develop incidence unlike above-mentioned model
The multilayer film that 45 ° of angle, it is also required to high reflectance and narrow bandwidth, while also requiring good space adaptability.
Summary of the invention
The present invention is directed to overcome defect of the existing technology, the invention adopts the following technical scheme:
The present invention provides a kind of 19.5nm multi-layer mirror, the 19.5nm multi-layer mirror includes:
Substrate, alternately superimposed layer, cap layers, the alternately superimposed layer are arranged in institute's substrate, and the cap layers setting is alternately
On superimposed layer；The alternately superimposed layer includes: that semiconductor film layer and replacing with the semiconductor film layer is superposed
Molybdenum film layer, the semiconductor film layer replace superposition multilayer with the molybdenum film layer altogether.
In some embodiments, the material of the semiconductor film layer is one of silicon, germanium, carbon, boron carbide, described half
Conductor thin film layer is coated with using DC power supply.
In some embodiments, the material of the cap layers is silicon.
In some embodiments, metal iridium film layer is additionally provided with outside the cap layers.
In some embodiments, the cap layers are with a thickness of 7nm, the metal iridium film layer with a thickness of 2nm.
In some embodiments, the surface roughness of the substrate is 0.7nm.
In some embodiments, the surface roughness of the alternately superimposed layer is 0.7nm, described in the alternating superimposed layer
Semiconductor film layer replaces 60 layers of superposition with the molybdenum film layer altogether.
In some embodiments, the surface roughness of the cap layers is 0.7nm.
In some embodiments, the material of the substrate is crystallite or fused quartz.
In some embodiments, the ratio that the molybdenum film layer accounts for periodic thickness is respectively 0.15 and 0.11.
The beneficial effects of the present invention are: a kind of 19.5nm multi-layer mirror provided in an embodiment of the present invention, by setting
Alternately superimposed layer is set, is made outside 19.5nm multi-layer mirror reflectivity with higher, also there is relatively narrow bandwidth, in addition, should
19.5nm multi-layer mirror further includes cap layers, which can resist high energy particle and solar irradiation, so that the 19.5nm of preparation
The resistance to high energy particle irradiation of multi-layer mirror and solar radiation.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of 19.5nm multi-layer mirror according to an embodiment of the invention；
Status diagram when Fig. 2 is 19.5nm multi-layer mirror borrowing floor drain according to an embodiment of the invention.
The present embodiments relate to appended drawing reference it is as follows:
1, substrate；2, alternating superimposed layer；21, semiconductor film layer；22, molybdenum film layer；3, cap layers；100,19.5nm multilayer
Film reflecting mirror.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing and specific implementation
Example, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only to explain this hair
It is bright, but not to limit the present invention.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
It is the structural representation of 19.5nm multi-layer mirror 100 provided in an embodiment of the present invention with reference to shown in Fig. 1-Fig. 2
Figure.
The embodiment of the invention provides a kind of 19.5nm multi-layer mirror 100, the 19.5nm multi-layer mirror 100
Include:
Substrate 1；
Alternately superimposed layer 2, the alternately superimposed layer 2 are arranged in institute's substrate 1, and the alternately superimposed layer 2 includes: semiconductor
Film layer 21 and replace the molybdenum film layer 22 being superposed with the semiconductor film layer 21, the semiconductor film layer 21 with
The molybdenum film layer 22 is alternately superimposed multilayer altogether；
Cap layers 3, the setting of cap layers 3 is on alternately superimposed layer 2.
In some embodiments, the material of the semiconductor film layer 21 be one of silicon, germanium, carbon, boron carbide, it is described
Semiconductor film layer 21 is coated with using DC power supply.
In some embodiments, the material of the cap layers 3 is silicon.
In some embodiments, metal iridium film layer is additionally provided with outside the cap layers 3.
In some embodiments, the cap layers 3 are with a thickness of 7nm, the metal iridium film layer with a thickness of 2nm.
In some embodiments, the surface roughness of the substrate 1 is 0.7nm.
In some embodiments, the surface roughness of the alternately superimposed layer 2 is 0.7nm, institute in the alternately superimposed layer 2
It states semiconductor film layer 21 and replaces 60 layers of superposition altogether with the molybdenum film layer 22.
In some embodiments, the surface roughness of the cap layers 3 is 0.7nm.
In some embodiments, the material of the substrate 1 is crystallite or fused quartz.
In some embodiments, the ratio that the molybdenum film layer 22 accounts for periodic thickness is respectively 0.15 and 0.11.
Below by specific embodiment setting to a kind of 19.5nm multi-layer mirror 100 provided in an embodiment of the present invention
Meter and preparation are described in detail.
Embodiment 1
1. design
IMD optical thin film design software is used first, has separately designed 0 ° and 45 ° of incident angle of 19.5nm period multilayer
Film reflecting mirror, the material used are molybdenum (Mo) and silicon (Si).First layer close to substrate 1 is semiconductor film layer 21, and material is
Silicon (Si), the second layer are molybdenum film layers 22, and material is Mo, and alternating is superimposed to 60 layers, and topmost one layer (61 layers) is cap layers 3, cap
The material selection silicon (Si) of layer.Specific design parameter is shown in Table 1, and the test parameter after practical preparation is shown in Table 2.The material of substrate 1
Select crystallite or fused quartz.
Table 1
Table 2
It can be seen that from the comparison of Tables 1 and 2, the items of the practical 19.5nm multi-layer mirror prepared of the embodiment of the present invention
Test parameter is not much different compared with design parameter, substantially conforms to the setting of design.
The surface roughness of substrate 1 is 0.7nm, and alternately the surface roughness of superimposed layer 2 is 0.7nm, and the surface of cap layers 3 is thick
Rugosity is 0.7nm.
On the basis of period film, (Si 7nm/Ir 2nm) cap layers are increased, outermost layer is metal Ir film.
2. preparation
Semiconductor film layer 21 and the molybdenum film layer 22 are coated with using DC magnetron sputtering method, power is respectively 60W
And 75W, background vacuum are better than 4*10-4Pa, working vacuum degree 0.1Pa.Film thickness is controlled using the time.
In traditional coating process, semiconductor material thin film is typically coated with using radio-frequency power supply.In film thickness monitoring
When precision is less than 1nm, semiconductor material thin film is coated with using radio-frequency power supply, is easy to appear rate calibration inaccuracy, stability is poor
And the disadvantages of poor repeatability.And in this 19.5nm reflecting mirror is coated with, film thickness monitoring precision needs to be accurate to 0.1nm or less.
Therefore, it is coated with semiconductor film layer using radio-frequency power supply, index request is not achieved.Therefore, import coating machine target rifle is changed
It makes, changes their Distribution of Magnetic Field, so that the target rifle is able to use DC power supply and be coated with semiconductor film layer, such as Si material film
Layer.Magnetic pole thickness is chosen as 14.5mm, and magnetic pole magnetic field strength is less than 4500 Gausses.
The beneficial effects of the present invention are: a kind of 19.5nm multi-layer mirror provided in an embodiment of the present invention, by setting
Alternately superimposed layer is set, is made outside 19.5nm multi-layer mirror reflectivity with higher, also there is relatively narrow bandwidth, in addition, should
19.5nm multi-layer mirror further includes cap layers, which can resist high energy particle and solar irradiation, so that the 19.5nm of preparation
The resistance to high energy particle irradiation of multi-layer mirror and solar radiation.The embodiment of the present invention has been coated with this using DC magnetron sputtering method
Reflecting mirror has been coated with semiconductor film layer especially with DC power supply, and this method has rate calibration accurate, stability height and
The features such as reproducible, makes the preparation of pole narrowband multi-layer mirror become simple.It avoids radio-frequency power supply and is coated with semiconductor film
The disadvantages of rate calibration inaccuracy that film layer is easy to appear, stability difference and poor repeatability.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can be executed with hardware, processor
The combination of software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only memory
(ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technical field
In any other form of storage medium well known to interior.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
The above described specific embodiments of the present invention are not intended to limit the scope of the present invention..Any basis
Any other various changes and modifications made by technical concept of the invention should be included in the guarantor of the claims in the present invention
It protects in range.
Claims (10)
1. a kind of 19.5nm multi-layer mirror characterized by comprising substrate, alternately superimposed layer, cap layers, the alternating are folded
Layer is added to be arranged in institute's substrate, the cap layers setting is on alternately superimposed layer；The alternately superimposed layer includes: semiconductor film layer
And replacing the molybdenum film layer being superposed with the semiconductor film layer, the semiconductor film layer and the molybdenum film layer are total
Alternately superposition multilayer.
2. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the material of the semiconductor film layer
For one of silicon, germanium, carbon, boron carbide, the semiconductor film layer is coated with using DC power supply.
3. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the material of the cap layers is silicon.
4. 19.5nm multi-layer mirror according to claim 3, which is characterized in that be additionally provided with metal outside the cap layers
Iridium film layer.
5. 19.5nm multi-layer mirror according to claim 4, which is characterized in that the cap layers are described with a thickness of 7nm
Metal iridium film layer with a thickness of 2nm.
6. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the surface roughness of the substrate is
0.7nm。
7. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the surface of the alternately superimposed layer is thick
Rugosity is 0.7nm, and the alternately semiconductor film layer described in superimposed layer replaces 60 layers of superposition with the molybdenum film layer altogether.
8. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the surface roughness of the cap layers is
0.7nm。
9. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the material of the substrate be crystallite or
Fused quartz.
10. 19.5nm multi-layer mirror according to claim 1, which is characterized in that the molybdenum film layer accounts for period thickness
The ratio of degree is respectively 0.15 and 0.11.
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| CN201811258124.4A CN109254338A (en) | 2018-10-26 | 2018-10-26 | A kind of 19.5nm multi-layer mirror |
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| CN201811258124.4A CN109254338A (en) | 2018-10-26 | 2018-10-26 | A kind of 19.5nm multi-layer mirror |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116926487A (en) * | 2023-07-21 | 2023-10-24 | 中国科学院长春光学精密机械与物理研究所 | Ti seed layer-based ultra-smooth multilayer film and preparation method thereof |
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| CN116926487A (en) * | 2023-07-21 | 2023-10-24 | 中国科学院长春光学精密机械与物理研究所 | Ti seed layer-based ultra-smooth multilayer film and preparation method thereof |
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Application publication date: 20190122 |