CN109245501B - Isolated power supply applied to multistage series IGBT - Google Patents
Isolated power supply applied to multistage series IGBT Download PDFInfo
- Publication number
- CN109245501B CN109245501B CN201811273168.4A CN201811273168A CN109245501B CN 109245501 B CN109245501 B CN 109245501B CN 201811273168 A CN201811273168 A CN 201811273168A CN 109245501 B CN109245501 B CN 109245501B
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- Prior art keywords
- power supply
- alternating current
- igbt
- isolated power
- magnetic ring
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- 238000009413 insulation Methods 0.000 claims abstract description 7
- 230000005284 excitation Effects 0.000 claims abstract description 4
- 230000002457 bidirectional effect Effects 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- 229910000859 α-Fe Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 238000002955 isolation Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/096—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the power supply of the control circuit being connected in parallel to the main switching element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2823—Wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2895—Windings disposed upon ring cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
- H01F27/324—Insulation between coil and core, between different winding sections, around the coil; Other insulation structures
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- H02J5/005—
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Abstract
The invention relates to an isolated power supply, in particular to an isolated power supply applied to a multistage series IGBT. The problems brought to the power supply by adopting a multi-stage IGBT series structure are as follows: each stage of IGBT is connected in series, and the emitter of each stage has different potentials with respect to the ground, so that the power supply of each stage of IGBT needs to be isolated; the power supply of each stage of IGBT has different voltages to ground, so the requirement of the insulation strength of the power supply of each stage of IGBT is different. In order to solve the above problem, a method of using an isolated driving power source of a current bus type is generally adopted. The method has the disadvantages that each transformer is unidirectional excitation, and the utilization rate of the magnetic core is low. Due to the defects of the existing method, a novel isolation driving power supply framework needs to be invented, and the utilization rate of the magnetic core can be improved on the premise that the isolation power supply of the multistage series IGBT can be met.
Description
Technical Field
The invention relates to an isolated power supply, in particular to an isolated power supply applied to a multistage series IGBT.
Technical Field
The IGBT is a typical switching device, has the characteristics of high input impedance, small conduction voltage drop and the like, and is very suitable for being applied to the fields of converter systems with the direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like; in practice, a multi-stage IGBT series structure is often adopted to increase the voltage level.
The problems brought to the power supply by adopting a multi-stage IGBT series structure are as follows: 1. each stage of IGBT is connected in series, and the emitter of each stage has different potentials with respect to the ground, so that the power supply of each stage of IGBT needs to be isolated; 2. the power supply of each stage of IGBT has different voltages to ground, so the requirements of the insulation strength of the power supply of each stage of IGBT are different.
In order to solve the above problems, a method generally adopted is to use a current bus type isolated driving power supply; the method is characterized in that: 1. each stage of IGBT is provided with a transformer, and the transformer adopts a magnetic ring transformer; 2. the primary winding of the magnetic loop transformer has only one turn; and share an alternating current bus which passes through the centers of all transformer magnetic rings.
The method has the disadvantages that each transformer is unidirectional excitation, and the utilization rate of the magnetic core is low. Due to the defects of the existing method, a novel isolation driving power supply framework needs to be invented, and the utilization rate of the magnetic core can be improved on the premise that the isolation power supply of the multistage series IGBT can be met.
Disclosure of Invention
The invention aims to design an isolated power supply applied to a multi-stage series IGBT (insulated gate bipolar transistor) by combining the requirements of the multi-stage series IGBT power supply.
The purpose of the invention can be realized by the following technical scheme: an isolated power supply applied to a multi-stage series IGBT comprises: the device comprises a direct current source, two MOSFETs, two alternating current buses, a PWM controller, N magnetic ring transformers, N rectifier modules and an insulating tube.
The direct current source is a main power supply of an isolated power supply of the multistage series IGBT; the output end of the direct current source is connected with the A ends of the two alternating current buses.
The MOSFET is used for changing the flowing direction of current in the two alternating current buses; the sources of the two MOSFETs are connected with the ground; the grids of the two MOSFETs are respectively connected with two output signal ends of the PWM controller; and the drain electrodes of the two MOSFETs are respectively connected with the ends B of the two alternating current buses.
The two alternating current buses are used as the primary sides of the N magnetic ring transformers; the two alternating current buses are provided with an A end and a B end; the A ends of the two alternating current buses are connected with the output end of the direct current source; the ends B of the two alternating current buses are respectively connected with the drain electrodes of the two MOSFETs; two alternating current buses penetrate through the centers of the N magnetic ring transformers; two ac busbars are placed in an insulating tube for improved insulation.
The magnetic ring transformer has the functions of electrically isolating the alternating current bus from the secondary side coil and transferring energy; ferrite is adopted as a magnetic core of the magnetic ring transformer; the primary side of the magnetic ring transformer is provided with two alternating current buses; two alternating current buses penetrate through the centers of the N magnetic ring transformers; the secondary side of the magnetic ring transformer is a multi-turn coil; and the secondary coil of each magnetic ring transformer is connected with the input end of the corresponding rectifying module.
The PWM controller controls the on and off of the two MOSFETs; two output signal ends of the PWM controller are respectively connected with the grids of the two MOSFETs.
The rectification module rectifies an alternating current signal output by the secondary side of the magnetic ring transformer into a direct current; the input end of each rectifier module is connected with the secondary side coil of the magnetic ring transformer corresponding to the rectifier module; the output end of each rectifying module is connected with a corresponding load.
The insulating tube is used for enhancing the insulating strength of the primary side and the secondary side of the magnetic ring transformer.
Drawings
Fig. 1 is a schematic diagram of an isolated power supply applied to a multi-stage series IGBT.
Fig. 2 is a schematic view of an insulation structure.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments; the present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
An isolated power supply applied to multistage series-connected IGBTs has the function of providing a high-efficiency and reliable power supply under the application condition of multistage series-connected IGBTs; as shown in fig. 1, it is a schematic diagram of an isolated power supply applied to a multi-stage series IGBT; an isolated power supply applied to a multi-stage series IGBT comprises: the power supply comprises a direct current source 1, MOSFETs 2-1 and 2-2, alternating current buses 3-1 and 3-2, magnetic ring transformers 4-1-4-N, rectifier modules 5-1-5-N, PWM, a controller 6 and an insulating tube 7.
The alternating current bus 3-1 and the alternating current bus 3-2 are both provided with two wiring terminals which are marked as an A terminal and a B terminal; the A ends of the alternating current bus 3-1 and the alternating current bus 3-2 are connected with the output end of the direct current source 1; the end B of the alternating current bus 3-1 is connected with the drain electrode of the MOSFET 2-1; terminal B of ac bus 3-2 is connected to the drain of MOSFET 2-2.
The PWM controller 6 is provided with two output ends which are respectively connected with the grids of the MOSFET2-1 and the MOSFET 2-2; the output of the PWM controller 6 is two complementary square wave signals for driving the MOSFET2-1 and the MOSFET 2-2; the MOSFETs 2-1 and 2-2 are alternately turned on under the control of the PWM controller 6 to cause current to alternately appear in the AC bus 3-1 and the AC bus 3-2.
The alternating current bus 3-1 and the alternating current bus 3-2 penetrate through the centers of the magnetic ring transformers 4-1-4-N; alternating currents in the alternating current bus 3-1 and the alternating current bus 3-2 can generate bidirectional excitation in the magnetic ring transformers 4-1-4-N; the magnetic ring transformers 4-1-4-N transmit the energy of the primary side to the secondary side; secondary side coils of the magnetic ring transformers 4-1-4-N are correspondingly connected with input ends of the rectifier modules 5-1-5-N one by one; the output ends of the rectifier modules 5-1-5-N are isolated from each other.
FIG. 2 is a schematic view of an insulation structure; in order to enhance the insulation strength of the primary side and the secondary side of the magnetic ring transformers 4-1-4-N; an insulating pipe 7 is sleeved outside the flow bus 3-1 and the alternating current bus 3-2.
Claims (8)
1. An isolated power supply applied to a multistage series IGBT (insulated gate bipolar transistor), comprising: the device comprises a direct current source, two MOSFETs, two alternating current buses, a PWM controller, N magnetic ring transformers, N rectifier modules and an insulating tube;
the MOSFET is used for changing the flowing direction of current in the two alternating current buses; the sources of the two MOSFETs are connected with the ground; the grids of the two MOSFETs are respectively connected with two output signal ends of the PWM controller; the drain electrodes of the two MOSFETs are respectively connected with the ends B of the two alternating current buses;
the insulation between the two alternating current buses and the secondary side coils of the N magnetic ring transformers is improved; the insulating pipe is sleeved outside the two alternating current buses; the insulating tube penetrates through the centers of the N magnetic ring transformers;
the two alternating current buses are respectively provided with two wiring terminals which are marked as an A terminal and a B terminal; the A ends of the two alternating current buses are connected with the output end of the direct current source.
2. The isolated power supply applied to the multistage series IGBT as claimed in claim 1, wherein the isolated power supply is a main power supply of the isolated power supply of the multistage series IGBT.
3. The isolated power supply applied to the multistage series IGBT as claimed in claim 1, wherein the PWM controller has two output terminals respectively connected with the gates of the two MOSFETs; the output of the PWM controller is two complementary square wave signals for driving the two MOSFETs.
4. The isolated power supply applied to the multistage series IGBT as claimed in claim 1, wherein under the control of the PWM controller, current is alternately generated in the two alternating current buses.
5. An isolated power supply applied to a multi-stage series IGBT as claimed in claim 1, wherein, the power supply passes through the center of the magnetic loop transformer; bidirectional excitation is generated in the magnetic loop transformer.
6. The isolated power supply applied to the multistage series IGBT as claimed in claim 1, wherein ferrite is adopted as the magnetic core of the magnetic ring transformer.
7. The isolated power supply applied to the multistage series IGBT as claimed in claim 1, wherein the primary side of the magnetic loop transformer is provided with two AC buses; two alternating current buses penetrate through the centers of the N magnetic ring transformers; the secondary side of the magnetic ring transformer is a multi-turn coil; and the secondary coil of each magnetic ring transformer is connected with the input end of the corresponding rectifying module.
8. The isolated power supply applied to the multistage series IGBT as claimed in claim 1, wherein the alternating current signal output by the secondary side of the magnetic loop transformer is rectified into direct current; the input end of each rectifier module is connected with the secondary side coil of the magnetic ring transformer corresponding to the rectifier module; the output end of each rectifying module is connected with a corresponding load.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811273168.4A CN109245501B (en) | 2018-10-30 | 2018-10-30 | Isolated power supply applied to multistage series IGBT |
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CN201811273168.4A CN109245501B (en) | 2018-10-30 | 2018-10-30 | Isolated power supply applied to multistage series IGBT |
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CN109245501A CN109245501A (en) | 2019-01-18 |
CN109245501B true CN109245501B (en) | 2021-01-15 |
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CN201811273168.4A Expired - Fee Related CN109245501B (en) | 2018-10-30 | 2018-10-30 | Isolated power supply applied to multistage series IGBT |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002247855A (en) * | 2001-02-15 | 2002-08-30 | Kawamura Electric Inc | Alternating-current voltage regulator |
CN102624245A (en) * | 2011-01-28 | 2012-08-01 | 联正电子(深圳)有限公司 | Quasi resonance push-pull converter and control method thereof |
CN102291010B (en) * | 2011-08-08 | 2013-09-04 | 山东蓝天电能科技有限公司 | Series bus type multi-DC output high voltage high frequency isolated power supply |
US9229459B2 (en) * | 2014-04-03 | 2016-01-05 | Hamilton Sundstrand Corporation | Saturation control of magnetic cores of bidirectional devices |
CN104967336A (en) * | 2015-06-12 | 2015-10-07 | 广西电网有限责任公司电力科学研究院 | Multichannel isolation power supply system and control method therefor |
CN107222096A (en) * | 2017-05-05 | 2017-09-29 | 广西高焱电气工程有限责任公司 | Isolated CUK push-pull topologies in parallel |
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