CN109244114A - A kind of array substrate and preparation method thereof and display panel - Google Patents
A kind of array substrate and preparation method thereof and display panel Download PDFInfo
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- CN109244114A CN109244114A CN201811088504.8A CN201811088504A CN109244114A CN 109244114 A CN109244114 A CN 109244114A CN 201811088504 A CN201811088504 A CN 201811088504A CN 109244114 A CN109244114 A CN 109244114A
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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Abstract
The present invention provides a kind of array substrate and preparation method thereof and display panel.The array substrate includes the transistor that viewing area is arranged in, it further include the gas detector that non-display area is set, gas detector includes heating layer, first electrode, second electrode and gas sensitive layer, heating layer material identical as the setting of the grid same layer of transistor and use, is used for heat gas sensitive layer；First electrode and second electrode material identical as the setting of the source-drain electrode same layer of transistor and use.The array substrate, which can be realized, is integrated in gas detector inside portable display apparatus, so that it is more convenient to carry gas detector；The array substrate can also enable the part-structure of gas detector and certain film layers of transistor prepare simultaneously using same process, to make gas detector without being directly installed on inside portable display apparatus, installation cost is not only reduced, and reduces the preparation cost for being integrated with the display device of gas detector.
Description
Technical field
The present invention relates to field of display technology, and in particular, to a kind of array substrate and preparation method thereof and display panel.
Background technique
The detection of pernicious gas is necessary, if with the detection function to pernicious gas on the portable equipment of people
Can, self-protection will be greatlyd improve.
But carrying portable gas detecting instrument has inconvenience, if loading gas detector in portable equipment such as hand
Inside machine, and it can additionally increase the cost of manufacture of portable equipment.
Therefore, gas detecting instrument can have been carried by portable equipment again by how neither additionally increasing portable equipment cost of manufacture
As current urgent problem to be solved.
Summary of the invention
The present invention is directed to the above-mentioned technical problems in the prior art, provide a kind of array substrate and preparation method thereof and
Display panel.The array substrate, which can be realized, is integrated in gas detector inside portable display apparatus, so that gas be made to visit
Survey device is carried more convenient；The array substrate can also enable certain film layers of the part-structure of gas detector with transistor
It is prepared using same process, to make gas detector without being directly installed on inside portable display apparatus, is not only dropped simultaneously
Low installation cost, and reduce the preparation cost for being integrated with the display device of gas detector.
The present invention provides a kind of array substrate, the transistor including viewing area is arranged in, and further includes being arranged in non-display area
Gas detector, the gas detector includes heating layer, first electrode, second electrode and gas sensitive layer, the heating
Layer material identical as the setting of the grid same layer of the transistor and use, for heating the gas sensitization layer；First electricity
Pole and second electrode material identical as the setting of the source-drain electrode same layer of the transistor and use.
Preferably, the array substrate further includes substrate, and the gate insulation layer of the transistor extends to the non-display area；
The first electrode, the gate insulation layer, the second electrode and the gas sensitization layer are far from the substrate
Direction on set gradually.
Preferably, the first electrode and the second electrode constitute interdigital electrode.
Preferably, the interdigital electrode it is adjacent it is interdigital between clearance distance range be 3-10 μm, the interdigital electrode
Interdigital width range is 5-20 μm, and the thickness range of the interdigital electrode is 100-350nm.
Preferably, the material of the heating layer includes silver, copper, aluminium, molybdenum, tungsten, any one in magnesium；The gas sensitization
The material of layer includes any one being added in the tin oxide, iron oxide, zinc oxide of platinum or palladium.
Preferably, the gas detector is multiple, and multiple gas detectors are arranged in array.
The present invention also provides a kind of display panels, including above-mentioned array substrate.
The present invention also provides a kind of preparation methods of above-mentioned array substrate, comprising: prepares to form transistor in viewing area；Also
It include: to prepare to form gas detector in non-display area；The heating layer of the gas detector and the grid of the transistor are adopted
It is formed simultaneously with same patterning processes；The first electrode and second electrode of the gas detector and the source-drain electrode of the transistor
It is formed simultaneously using same patterning processes.
Preferably, preparation forms the transistor and preparation forms the gas detector and includes:
The figure including the heating layer and the grid is formed on the substrate；
Form the figure of the gate insulation layer of the transistor；The gate insulation layer extends to the non-display area；
Form the figure of the active layer including the transistor；
Form the figure including the first electrode, the second electrode and the source-drain electrode；
Form the figure of the passivation layer of the transistor；The passivation layer is removed in the non-display area, so that described the
One electrode and the second electrode are contacted with the gas sensitization layer of the gas detector；
Form the figure of the gas sensitization layer.
Preferably, the figure of the gas sensitization layer for forming the gas detector includes:
The figure of the gas sensitization layer is formed using physical vaporous deposition.
Beneficial effects of the present invention: array substrate provided by the present invention, by being arranged gas detector in array base
The non-display area of plate can be realized gas detector being integrated in portable display apparatus (such as mobile phone) inside, to make gas
Detector is carried more convenient；By making the grid same layer setting of the heating layer of gas detector and transistor and using phase
Same material, and make the first electrode of gas detector and second electrode material identical as the setting of the source-drain electrode same layer of transistor and use
Material enables the part-structure of gas detector and certain film layers of transistor to prepare simultaneously using same process, to make gas
Detector not only reduces installation cost, and reduce and be integrated with gas without being directly installed on inside portable display apparatus
The preparation cost of the display device of bulk detector.
Display panel provided by the present invention can be realized the display panel by gas by using above-mentioned array substrate
Bulk detector is integrated inside it, so that it is more convenient to carry gas detector；Also it is not necessarily to gas detector simultaneously
Be directly installed on inside the display panel, not only reduce installation cost, and reduce be integrated with gas detector this is aobvious
Show the preparation cost of panel.
Detailed description of the invention
Fig. 1 is the partial structure sectional view of array substrate in the embodiment of the present invention 2；
Fig. 2 is the top view of array substrate in the embodiment of the present invention 2；
Fig. 3 is the measuring circuit figure of gas detector in the embodiment of the present invention 2；
Fig. 4 is the structure top view for the interdigital electrode being made of in the embodiment of the present invention 2 first electrode and second electrode；
Fig. 5 is the array base-plate structure cross-sectional view that heating layer and grid are formed in the embodiment of the present invention 2；
Fig. 6 is the array base-plate structure cross-sectional view that gate insulation layer is formed in the embodiment of the present invention 2；
Fig. 7 is the array base-plate structure cross-sectional view that active layer is formed in the embodiment of the present invention 2；
Fig. 8 is that first electrode, the array base-plate structure section view of second electrode and source-drain electrode are formed in the embodiment of the present invention 2
Figure；
Fig. 9 is the array base-plate structure cross-sectional view that passivation layer is formed in the embodiment of the present invention 2；
Figure 10 is the array base-plate structure cross-sectional view that gas sensitization layer is formed in the embodiment of the present invention 2.
Description of symbols therein:
1. viewing area；2. transistor；21. grid；22. source-drain electrode；23. gate insulation layer；24. active layer；25. passivation layer；
3. non-display area；4. gas detector；41. heating layer；42. first electrode；43. second electrode；44. gas sensitization layer；5. base
Bottom.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, with reference to the accompanying drawing and it is embodied
Mode is described in further detail a kind of array substrate provided by the present invention and preparation method thereof and display panel.
Embodiment 1:
The present embodiment provides a kind of array substrates, the transistor including viewing area is arranged in, and further include being arranged non-display
The gas detector in area, gas detector include heating layer, first electrode, second electrode and gas sensitive layer, heating layer and brilliant
The grid same layer of body pipe is arranged and uses identical material, is used for heat gas sensitive layer；First electrode and second electrode and crystal
The source-drain electrode same layer of pipe is arranged and uses identical material.
By the way that gas detector to be arranged in the non-display area of array substrate, it can be realized and be integrated in gas detector just
It is internal to take formula display device (such as mobile phone), so that it is more convenient to carry gas detector；By making gas detector
Heating layer material identical as the setting of the grid same layer of transistor and use, and make the first electrode and second electrode of gas detector
Material identical as the setting of the source-drain electrode same layer of transistor and use enables the certain of the part-structure of gas detector and transistor
Film layer is prepared simultaneously using same process, to make gas detector without being directly installed on inside portable display apparatus, no
It reduced by only installation cost, and reduce the preparation cost for being integrated with the display device of gas detector.
Embodiment 2:
The present embodiment provides a kind of array substrates, as depicted in figs. 1 and 2, the transistor 2 including viewing area 1 is arranged in, and also
Gas detector 4 including non-display area 3 is arranged in, gas detector 4 include heating layer 41, first electrode 42, second electrode
43 and gas sensitive layer 44, the material identical as the setting of 21 same layer of grid of transistor 2 and use of heating layer 41, for heat gas
Sensitive layer 44；First electrode 42 and the material identical as the setting of 22 same layer of source-drain electrode of transistor 2 and use of second electrode 43.
Wherein, array substrate further includes substrate 5, and the gate insulation layer 23 of transistor 2 extends to non-display area 3；It extends to non-
The gate insulation layer 23 of viewing area 3 can separate the heating layer 41 of gas detector 4 and its first electrode 42 and second electrode 43 simultaneously
Mutually insulated, to realize the structure setting of gas detector 4.First electrode 42, gate insulation layer 23, second electrode 43 and gas
Sensitive layer 44 is set gradually on the direction far from substrate 5.
Above structure based on gas detector, for measuring circuit as shown in figure 3, R1 is heating layer 41, R2 is that gas is quick
Feel layer 44, R0 is made of first electrode 42 and second electrode 43；The both ends of R1 are for connecing heating power supply, and R1 is for heating R2；String
The both ends R2 and R0 of connection connection are used to measure the resistance variations of R2 for meeting measurement power supply, R0；Both ends, that is, first electrode 42 of R0
The output voltage signal between second electrode 43；The variation of 44 resistance value of gas sensitization layer can cause the variation of electric current in circuit,
The voltage signal of output calculates the resistance variations of R2 according to the voltage signal taken out on R0, to detect by taking out on resistance R0
The ingredient and concentration of gas.
In the present embodiment, the material of heating layer 41 includes silver, copper, aluminium, molybdenum, tungsten, any one in magnesium；Form heating layer
41 these materials have good thermal conductivity and electric conductivity, can carry out very well in the case where power-up to gas sensitization layer 44
Heating.The material of gas sensitization layer 44 includes any one being added in the tin oxide, iron oxide, zinc oxide of platinum or palladium.
Wherein, platinum and palladium are sensitizer, add the tin oxide, iron oxide or zinc oxide of platinum to oxidizing gas such as propane, iso-butane
Etc. sensitivity with higher, it can be used for detecting the concentration of oxidizing gas；Add tin oxide, iron oxide or the zinc oxide of palladium
To reducibility gas such as CO, H2Deng more sensitive, it can be used for detecting the concentration of reducibility gas.
Wherein, gas detector be mainly used for the parts such as industrial natural gas, coal gas, petrochemical industry it is inflammable, explosive, have
The monitoring of poison, pernicious gas, gas sensitization layer is using the ingredient of chemical substance and concentration as the chemical sensitive layer of detection parameters.
The principle of gas detector the detection of gas compositions and concentration are as follows: when usual gas sensitization layer 44 is worked in air,
Electronics compatible big gas such as oxygen and NO in air2, receive the electronics from metal oxide semiconductor material and adsorb
Negative electrical charge, the conduction electronics for oxidizing metal the surface space-charge layer region of object semiconductor material are reduced, and make surface conductivity
Reduce, so that gas sensitization layer 44 be made to be in high-impedance state；When gas sensitization layer 44 and tested gas (such as reducibility gas CO,
H2Deng) contact, it will react with the oxygen of absorption, the electronics fettered by oxygen is released, 44 surface conductance of gas sensitization layer
Rate increases, and reduces its resistance.For reducibility gas, the resistance value of gas sensitization layer 44 reduces；For oxidizing gas, gas
The resistance value of body sensitive layer 44 increases, in this way, can detect the ingredient of tested gas according to the variation of resistance value.Tested gas
Concentration is different, and the resistance change of gas sensitization layer 44 also can be different, in this way, according to the variation energy detection gas of resistance value
Concentration.The heating of heating layer 41 can make the detection of 44 pairs of tested gas of gas sensitization layer sensitiveer, because metal oxide
Once heating, the oxygen in air will seize gas sensitization layer 44 from the donor level of metal-oxide-semiconductor crystal grain
Electronics, and negative electron is adsorbed on crystal surface, increase crystal surface current potential, so that the movement of conduction electrons is hindered, according to
The principle of 44 the detection of gas compositions of above-mentioned gas sensitive layer and concentration, heating can make the sensitivity of 44 probe gas of gas sensitization layer
It is higher.For example, after adsorbing certain gas at normal temperature, conductivity variations are not using the gas sensitization layer 44 of stannic oxide materials
Greatly, if keeping this gas concentration constant, the conductivity of the gas sensitization layer 44 increases with the raising of itself temperature, especially
Its conductivity variations is very big when within the scope of 100-300 DEG C.
Preferably, in the present embodiment, as shown in figure 4, first electrode 42 and second electrode 43 constitute interdigital electrode.Interdigital electricity
Extremely it is adjacent it is interdigital between clearance distance d range be 3-10 μm, the interdigital width w range of interdigital electrode is 5-20 μm, interdigital electricity
The thickness range of pole is 100-350nm.In addition, the size of the long * wide of outer edge of interdigital electrode entirety is 50*50 μm2、100*
100μm2Or 150*150 μm2.Since the interdigital length-width ratio of interdigital electrode is bigger, interdigital density is bigger, at the beginning of interdigital electrode
Beginning resistance is smaller, and the sensitivity of gas detector and response speed are higher；The electric field strength of interdigital electrode and the thickness of interdigital electrode
Approximate inverse relation is spent into, interdigital electrode is thicker, and electric field strength is smaller；Therefore, by carrying out above structure ginseng to interdigital electrode
Several settings, can be improved the detectivity and response speed of gas detector, so that the gas for improving gas detector is visited
Survey performance.
In the present embodiment, gas detector be it is multiple, multiple gas detectors are arranged in array.Multiple gas detectors
Setting can be improved the accuracy of tested gas componant and concentration detection.
It should be noted that the detection window of gas detector can establish the trade mark in portable display apparatus such as mobile phone
Region or other non-display areas, so that it is guaranteed that the overall aesthetics of display screen is unaffected.
Above structure based on array substrate, the present embodiment also provide a kind of preparation method of array substrate, comprising:
Viewing area prepares to form transistor；Further include: it prepares to form gas detector in non-display area；The heating layer of gas detector with
The grid of transistor is formed simultaneously using same patterning processes；The first electrode and second electrode of gas detector and transistor
Source-drain electrode is formed simultaneously using same patterning processes.
The preparation method of the array substrate can make gas detector without being directly installed on inside portable display apparatus, no
It reduced by only installation cost, and reduce the preparation cost for being integrated with the display device of gas detector.
Preparation forms the transistor and preparation formed the gas detector include: as shown in fig. 5-10,
S101: the figure including heating layer 41 and grid 21 is formed on substrate 5, as shown in Figure 5.
In the step, the figure to form grid 21 and heating layer 41, conventional patterning processes are prepared using conventional patterning processes
Include the steps that film deposition, photoresist coating, exposure, development, etching, is the fabricating technology of comparative maturity, specifically not
It repeats again.
S102: the figure of the gate insulation layer 23 of transistor is formed；Gate insulation layer 23 extends to non-display area 3, such as Fig. 6 institute
Show.
In the step, gate insulation layer 23 prepares to be formed using SiO or AlO material, conventional patterning processes, specifically no longer superfluous
It states.
S103: the figure of the active layer 24 including transistor is formed, as shown in Figure 7.
In the step, active layer 24 prepares to be formed using conventional patterning processes, specifically repeats no more.
S104: the figure including first electrode 42, second electrode 43 and source-drain electrode 22 is formed, as shown in Figure 8.
In the step, prepare to form first electrode 42, second electrode 43 and source-drain electrode 22 using conventional patterning processes, specifically
It repeats no more.
S105: the figure of the passivation layer 25 of transistor is formed；Passivation layer is removed in non-display area 3, so that first electrode 42
It is contacted with second electrode 43 with the gas sensitization layer 44 of gas detector, as shown in Figure 9.
In the step, passivation layer 25 is formed using conventional patterning processes, and details are not described herein again.First electrode 42 and the second electricity
Pole 43 is in contact with gas sensitization layer 44, can the resistance variations to gas sensitization layer 44 accurately sensed, to realize
Detection of the gas detector to tested gas.
S106: the figure of gas sensitization layer 44 is formed, as shown in Figure 10.
In the step, the figure of gas sensitization layer 44 is formed using physical vaporous deposition.Such as deposited using magnetron sputtering
Method prepare to form gas sensitization layer 44, in magnetron sputtering deposition process, by the target and tin oxide of platinum or palladium, iron oxide
Or the target of zinc oxide is all set on target base station, when sputtering, base station rotation makes the target of platinum or palladium and tin oxide, oxidation
The target alternating sputtering of iron or zinc oxide deposition, to form 44 film of gas sensitization layer, to realize tin oxide, iron oxide or oxidation
The addition of platinum or palladium in Zinc material.Physical vaporous deposition is the technology of comparative maturity, is specifically repeated no more.
Embodiment 1-2's the utility model has the advantages that array substrate provided by embodiment 1-2, by the way that gas detector setting exists
The non-display area of array substrate can be realized gas detector being integrated in portable display apparatus (such as mobile phone) inside, thus
Carry gas detector more convenient；By make gas detector heating layer and transistor grid same layer setting and
Using identical material, and make gas detector first electrode and second electrode and the source-drain electrode same layer of transistor setting and use
Identical material enables the part-structure of gas detector and certain film layers of transistor to prepare simultaneously using same process, thus
Make gas detector without being directly installed on inside portable display apparatus, not only reduces installation cost, and reduce collection
At the preparation cost for the display device for having gas detector.
Embodiment 3:
The present embodiment provides a kind of display panels, including the array substrate in embodiment 1 or 2.
By using the array substrate in embodiment 1 or 2, it can be realized the display panel and be integrated in gas detector
Inside it, so that it is more convenient to carry gas detector；Also make gas detector aobvious without being directly installed on this simultaneously
Show panel itself, not only reduce installation cost, and reduces being prepared into for the display panel for being integrated with gas detector
This.
Display device provided by the present invention can for oled panel, OLED TV, LCD panel, LCD TV, display,
Any products or components having a display function such as mobile phone, navigator.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of array substrate, the transistor including viewing area is arranged in, which is characterized in that further include that non-display area is arranged in
Gas detector, the gas detector include heating layer, first electrode, second electrode and gas sensitive layer, the heating layer
Material identical as the setting of the grid same layer of the transistor and use, for heating the gas sensitization layer；The first electrode
Material identical as the setting of the source-drain electrode same layer of the transistor and use with the second electrode.
2. array substrate according to claim 1, which is characterized in that the array substrate further includes substrate, the crystal
The gate insulation layer of pipe extends to the non-display area；
The first electrode, the gate insulation layer, the second electrode and the gas sensitization layer are in the side far from the substrate
It sets gradually upwards.
3. array substrate according to claim 1, which is characterized in that the first electrode and the second electrode constitute fork
Refer to electrode.
4. array substrate according to claim 3, which is characterized in that the interdigital electrode it is adjacent it is interdigital between clearance gap
It is 3-10 μm from range, the interdigital width range of the interdigital electrode is 5-20 μm, and the thickness range of the interdigital electrode is
100-350nm。
5. array substrate according to claim 1, which is characterized in that the material of the heating layer include silver, copper, aluminium, molybdenum,
Any one in tungsten, magnesium；The material of the gas sensitization layer includes tin oxide, iron oxide, zinc oxide added with platinum or palladium
In any one.
6. array substrate described in -5 any one according to claim 1, which is characterized in that the gas detector be it is multiple,
Multiple gas detectors are arranged in array.
7. a kind of display panel, which is characterized in that including array substrate as claimed in any one of claims 1 to 6.
8. a kind of preparation method of array substrate as claimed in any one of claims 1 to 6, comprising: prepare to be formed in viewing area
Transistor；It is characterized by further comprising: preparing to form gas detector in non-display area；The heating layer of the gas detector
It is formed simultaneously with the grid of the transistor using same patterning processes；The first electrode and second electrode of the gas detector
It is formed simultaneously with the source-drain electrode of the transistor using same patterning processes.
9. the preparation method of array substrate according to claim 7, which is characterized in that the array substrate is claim
Array substrate described in 1-2 any one, preparation forms the transistor and preparation forms the gas detector and includes:
The figure including the heating layer and the grid is formed on the substrate；
Form the figure of the gate insulation layer of the transistor；The gate insulation layer extends to the non-display area；
Form the figure of the active layer including the transistor；
Form the figure including the first electrode, the second electrode and the source-drain electrode；
Form the figure of the passivation layer of the transistor；The passivation layer is removed in the non-display area, so that first electricity
Pole and the second electrode are contacted with the gas sensitization layer of the gas detector；
Form the figure of the gas sensitization layer.
10. preparation method according to claim 9, which is characterized in that the gas for forming the gas detector is quick
Sense layer figure include:
The figure of the gas sensitization layer is formed using physical vaporous deposition.
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| CN201811088504.8A CN109244114A (en) | 2018-09-18 | 2018-09-18 | A kind of array substrate and preparation method thereof and display panel |
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| CN201811088504.8A CN109244114A (en) | 2018-09-18 | 2018-09-18 | A kind of array substrate and preparation method thereof and display panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206124A (en) * | 2020-02-03 | 2021-08-03 | 京东方科技集团股份有限公司 | Display panel and display device |
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| US20030049856A1 (en) * | 2000-08-31 | 2003-03-13 | Micron Technology, Inc. | Detection devices, methods and systems for gas phase materials |
| CN102778479A (en) * | 2011-05-09 | 2012-11-14 | 中国科学院微电子研究所 | Integratable amorphous metal oxide semiconductor gas sensor |
| CN104122320A (en) * | 2014-07-11 | 2014-10-29 | 京东方科技集团股份有限公司 | A gas detection sensing device, a display panel and a display device |
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2018
- 2018-09-18 CN CN201811088504.8A patent/CN109244114A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030049856A1 (en) * | 2000-08-31 | 2003-03-13 | Micron Technology, Inc. | Detection devices, methods and systems for gas phase materials |
| CN102778479A (en) * | 2011-05-09 | 2012-11-14 | 中国科学院微电子研究所 | Integratable amorphous metal oxide semiconductor gas sensor |
| CN104122320A (en) * | 2014-07-11 | 2014-10-29 | 京东方科技集团股份有限公司 | A gas detection sensing device, a display panel and a display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206124A (en) * | 2020-02-03 | 2021-08-03 | 京东方科技集团股份有限公司 | Display panel and display device |
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