CN109243912A - A kind of MEMS inertia switch based on three-stage bistable state girder construction - Google Patents
A kind of MEMS inertia switch based on three-stage bistable state girder construction Download PDFInfo
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- CN109243912A CN109243912A CN201811066882.6A CN201811066882A CN109243912A CN 109243912 A CN109243912 A CN 109243912A CN 201811066882 A CN201811066882 A CN 201811066882A CN 109243912 A CN109243912 A CN 109243912A
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- mass block
- switch
- girder construction
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- mems inertia
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
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- Electromagnetism (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of MEMS inertia switches based on three-stage bistable state girder construction.It include: switch housing, bistable mechanism and switch auxiliary body, switch auxiliary body and bistable mechanism are successively set on inside switch housing on acceleration direction, switching auxiliary body includes spring body and the first mass block, bistable mechanism includes three-stage girder construction and the second mass block, switch housing with the second mass block relative position at be provided with switch contact, first mass block is oppositely arranged with the second mass block, the quality of first mass block is greater than the quality of the second mass block, MEMS inertia switch is when by setting acceleration, first mass block is under the action of inertia, collide the second mass block, move the second mass block along acceleration direction, bistable mechanism is by a kind of stable state to another stable state, press the switch contact, turning circuit.MEMS inertia switch provided by the invention has the advantage that high sensitivity, anti-electromagnetic interference capability are strong and resistance to mechanical vibration ability is strong.
Description
Technical field
The present invention relates to micro electro mechanical system fields, used more particularly to a kind of MEMS based on three-stage bistable state girder construction
Property switch.
Background technique
MEMS (MEMS) refer to size at several millimeters or even smaller high-tech Mechatronic device, internal junction
For structure generally in micron even nanometer scale, common MEMS product size is generally all in millimeter magnitude, or even arrives several hundred microns.
MEMS is mainly made of sensor, movement device (actuator) and micro- energy three parts.MEMS acceleration switch be gathered it is micro-
The MEMS device of type sensor and actuator can complete closure-disconnection (On- of switch under the excitation of environment acceleration
Off) function.Currently, common MEMS inertia sensing and performer are mainly accelerometer, structure by induction mass block,
Support beam system and feedback control circuit composition, structure is sufficiently complex, and difficulty of processing is big.Feedback control circuit is needed in power-up
In the case of work, malfunction is easy to produce under strong electromagnetic, is not suitable for the equipment of electromagnetism interference.In addition, there are also one
Micro- acceleration switch of a little pure mechanic structures, still, these do not have lock function after closing the switch, therefore, resistance to mechanical vibration etc.
External environment interference performance is insufficient.
Summary of the invention
The object of the present invention is to provide a kind of MEMS inertia switches based on three-stage bistable state girder construction, have sensitivity
Advantage high, anti-electromagnetic interference capability is strong and resistance to mechanical vibration ability is strong.
To achieve the above object, the present invention provides following schemes:
A kind of MEMS inertia switch based on three-stage bistable state girder construction, comprising: switch housing, bistable mechanism and open
Auxiliary body is closed, the switch auxiliary body and bistable mechanism are arranged inside the switch housing, and in acceleration direction
On set gradually;
The switch auxiliary body includes spring body and the first mass block, and the both ends of the spring body are respectively with described first
Mass block and the switch housing inner wall are connected;
The bistable mechanism includes three-stage girder construction and the second mass block, and the three-stage girder construction includes the first beam
Structure and the second girder construction, first girder construction include the first flexible beam, the second flexible beam and buckstay, the bistable state machine
For structure in the first stable position, first flexible beam and the second flexible beam are not conllinear horizontal beam, and the buckstay is oblique
Beam, first flexible beam one end are fixedly connected with switch housing side wall, the other end of first flexible beam and buckstay
One end is fixedly connected, and the other end of the buckstay is fixedly connected with one end of second flexible beam, second flexible beam
The other end be fixedly connected with the side of second mass block, first girder construction and the second girder construction are about described second
The central axes of mass block are symmetrical arranged;
The switch housing with second mass block relative position at be provided with switch contact;
First mass block is oppositely arranged with second mass block, and the quality of first mass block is greater than described the
The quality of two mass blocks, the MEMS inertia switch is when by setting acceleration, effect of first mass block in inertia
Under, it is contacted with second mass block, the active force in acceleration direction, second mass block is generated to second mass block
It is moved along acceleration direction, presses the switch contact.
Optionally, the quantity of the three-stage girder construction is 4N1Root, the bistable mechanism in the first stable position,
4N1Three-stage girder construction described in root is parallel to each other, wherein N1For positive integer.
Optionally, the described first flexible beam length is less than the rigid beam length, the described first flexible beam length and second
Flexible beam length is identical.
Optionally, the quantity of the spring body is multiple, and the spring body is symmetrical in the two sidewalls of first mass block
Setting, the spring body are folded spring beam, and one end of the folded spring beam is fixedly connected with the side wall of the switch case,
The other end is fixedly connected with the side wall of first mass block, and first mass block is supported and fixed on by the folded spring beam
Inside the switch case.
Optionally, the spring body is by N2Root folded spring beam composition, wherein N2For positive integer.
Optionally, the quantity of the spring body is 4, is symmetrically disposed on the upper of the opposite two sidewalls of first mass block
Portion and lower part.
Optionally, the side wall of first mass block and the inner sidewall of the switch case are tooth comb-type structure, described
The tooth comb-type structure of first mass block and the tooth comb-type structure of the switch case match setting, and fit system is matched for gap
It closes.
Optionally, the switch auxiliary body is process on soi wafer using two-sided etching technics, wherein described
First mass block is process by the bottom and device layer of soi wafer, the spring body by soi wafer device layer processing and
At.
Optionally, the bistable mechanism is process on soi wafer using two-sided etching technics, wherein described the
Two mass blocks are process by the bottom and device layer of soi wafer, the three-stage type beam by soi wafer device layer processing and
At.
Optionally, the switch case is to be process in the bottom and device layer of soi wafer using two-sided etching technics.
The specific embodiment provided according to the present invention, the invention discloses following technical effects: provided by the invention to be based on
The MEMS inertia switch of three-stage bistable state girder construction includes switch housing, bistable mechanism and switch auxiliary body, is switched auxiliary
The setting of Agency steady state mechanism is helped to set gradually inside switch housing, and on acceleration direction;Switch auxiliary body's packet
Spring body and the first mass block are included, bistable mechanism includes three-stage girder construction and the second mass block, the first mass block and second
Mass block is oppositely arranged, and the quality of the first mass block is greater than the quality of second mass block;Switch housing with the second mass
Block is provided with switch contact at relative position;For MEMS inertia switch when by certain acceleration, the first mass block is in inertia
Under the action of, it is contacted with the second mass block, the active force in acceleration direction is generated to the second mass block, the second mass block is along acceleration
Direction movement is spent, bistable mechanism, to another stable state, presses the switch contact, switch conduction by a kind of stable state.The present invention
The MEMS inertia switch of offer is the disconnection for fully relying on mechanical structure completion and the switch of closure function, thus is had good
Anti-electromagnetic interference capability, moreover, MEMS inertia switch provided by the invention is due to the switch auxiliary body that has, so as to small
Acceleration can also incude and act, have the characteristics that high sensitivity, meanwhile, bistable mechanism tool is being pressed there are two stable state
There is self-locking function, resistance to mechanical vibration ability is strong after electric shock.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structural schematic diagram of the MEMS inertia switch of three-stage of embodiment of the present invention bistable state girder construction;
Fig. 2 is the structural schematic diagram of switch auxiliary body;
Fig. 3 is the structural schematic diagram of switch shell;
Fig. 4 is the structural schematic diagram of bistable mechanism of the embodiment of the present invention;
Fig. 5 is the bistable state schematic diagram of three-stage of embodiment of the present invention bistable state girder construction;
Fig. 6 is bistable mechanism of embodiment of the present invention force-displacement relationship schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of MEMS inertia switches based on three-stage bistable state girder construction, have sensitivity
Advantage high, anti-electromagnetic interference capability is strong and resistance to mechanical vibration ability is strong.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is the structural schematic diagram of MEMS inertia switch of the embodiment of the present invention based on three-stage bistable state girder construction, such as
Shown in Fig. 1, the MEMS inertia switch provided by the invention based on three-stage bistable state girder construction include: switch housing 1, switch it is auxiliary
Agency steady state mechanism is helped, the switch auxiliary body and bistable mechanism are arranged inside the switch housing 1, and are adding
It is set gradually on directional velocity;
Switch auxiliary body is spring-damper structure, as shown in Fig. 2, including spring body 3 and the first mass block 2, spring body
3 both ends are connected with first mass block 2 and 1 inner wall of switch housing respectively;The quantity of the spring body 3 be it is multiple,
The spring body 3 is symmetrical arranged in the two sidewalls of first mass block 2, and the spring body 3 can be folded spring beam, described
One end of folded spring beam is fixedly connected with the side wall of the switch case 1, and the side wall of the other end and first mass block 2 is solid
First mass block 2 is supported and fixed on inside the switch case by fixed connection, the folded spring beam, the spring body 3
By N2Root folded spring beam composition.The rigidity of the folded spring beam is setting value.
The quantity of spring body 3 can be 4, be symmetrically disposed on the opposite two sidewalls of first mass block 2 top and
Lower part.Switch auxiliary body can perceive environment acceleration auxiliary switch and complete closure.
The side wall of first mass block 2 and the inner sidewall of switch case 1 are tooth comb-type structure, the stripping fork of the first mass block 2
The tooth comb-type structure of type structure and switch case 1 matches setting, and fit system is clearance fit.The first mass block 2 can be given
Movement provides enough air dampings, reaches cushioning effect, meanwhile, interdigitated electrode structure structure can limit the first mass block 2,
The structure chart of switch case 1 is as shown in Figure 3.
Bistable mechanism includes three-stage girder construction 4 and the second mass block 6, three-stage girder construction include the first girder construction and
Second girder construction, as shown in figure 4, the bistable mechanism, in the first stable position, the first girder construction and the second girder construction are closed
It is symmetrical arranged in the central axes of the second mass block 6, the first girder construction includes the first flexible beam, the second flexible beam and buckstay, double
For steady state mechanism in stable state, the first flexible beam and the second flexible beam are not conllinear horizontal beam, and buckstay is cant beam, and first is flexible
Beam one end is fixedly connected with switch housing side wall, and the other end of the first flexible beam is fixedly connected with one end of buckstay, buckstay
The other end be fixedly connected with one end of the second flexible beam, the side of the other end of the second flexible beam and the second mass block is fixed to be connected
Connect, the first flexible beam length is less than rigid beam length, and the first flexible beam length is less than rigid beam length, the first flexible beam length and
Second flexible beam length is identical;The quantity of three-stage girder construction 4 is 4N1Root (N1For positive integer), 4N1Three-stage beam knot described in root
Structure 4 is arranged in parallel.In order to improve structure perpendicular to the anti-interference ability on acceleration sensitive direction, 4N can be used1Root three
Segmentation girder construction 4 supports the second mass block 6.Second mass block 6 is processed by highly doped polysilicon, electrically conductive.
Bistable mechanism is machined with metal electrode on switch housing 1 for realizing the closure and lock function of switch, and
It is provided with switch contact 5 at 6 relative position of the second mass block, behind 6 impact switch contact 5 of the second mass block, conducting switch
Circuit, after by thresholding acceleration effect, the second mass block 6 leaves switch contact 5, and switch disconnects.
The quality of first mass block 2 is greater than the quality of the second mass block 5, and the first mass block 2 is set relatively with the second mass block 6
It sets, bistable mechanism includes two stable states, and original state is the first stable state, when by setting acceleration, the first mass
Block 2 under the action of inertia, is contacted with the second mass block 6, to the second mass block 6 generate acceleration direction active force, second
Mass block 6 is moved along acceleration direction, and MEMS is connected by the first stable state to the second stable state, push switch contact 5 in bistable mechanism
Inertia switch circuit, after by reversed thresholding acceleration effect, the second mass block 6 leaves switch contact 5, and switch disconnects.
Auxiliary body is switched by the first mass block 2 and 4N of an interdigitated electrode structure2Root folded spring beam composition, in soi wafer
It is upper to be process using two-sided etching technics, wherein 4N2Root folded spring beam is process by soi wafer device layer silicon, and first
Mass block 2 is formed by soi wafer device layer and the two-sided lithography of bottom.
Bistable mechanism is by second mass block 5 and 4N1Root three-stage girder construction 4 forms, and bistable mechanism is in SOI silicon
On piece is process using two-sided etching technics, wherein 4N14 structure of root three-stage girder construction processed by soi wafer device layer and
At the second mass block 5 is formed by soi wafer device layer and the two-sided lithography of bottom, and the second mass block 5 is rectangle mass block.
Switch housing 1 is also to process structure using two-sided etching technics on soi wafer.
The bistable state schematic diagram of bistable mechanism of the invention is as shown in figure 5, flexible beam is slender beam.Wherein, solid line is
The first lower state of structure, dotted line are the second lower state of structure, and F is the driving being applied on the second mass block of structure centre
Power, δ are the second mass block vertical direction moving displacement.Bistable state force-displacement relationship curve as shown in fig. 6, be at origin in Fig. 6
First stable position of structure, D point are the second stable position, and B point is unstable equilbrium position.A point power F1For bistable state knot
Structure jumps to the critical force of the second stable state from the first stable state, and (i.e. applied external force has to be larger than F1), C point F2It is that structure is steady from second
State jumps to the critical force of the first stable state.Maximum to guarantee to close the switch rear contact force, contact closure position is arranged the present invention
C point is moved in mass block to correspond at displacement.
The course of work of MEMS inertia switch provided by the invention based on three-stage bistable state girder construction is as follows:
When MEMS inertia switch is by additional thresholding acceleration aonAfter effect, the first mass block 2 and the second mass block 6 are generated
Inertia force overcome the elastic force of spring body 3, drive bistable mechanism, the second mass block 6 depressed into opening on touching switch shell 1
Contact 5 is closed, thus turning circuit, switch completes closed action.
After outer acceleration is removed, the first mass block 2 is retracted by the folded beam of spring body 3, since bistable system provides
Negative stiffness, the second mass block 6 can guarantee that switch contact 5 continues to closed state.
MEMS inertia switch is by backward acceleration aoffThe second mass block 6 can be made to be detached from switch contact 5, work as aoffReach
When switching cut-off threshold, switch is disconnected.
MEMS inertia switch provided by the invention based on three-stage bistable state girder construction has the advantages that
(1) the MEMS inertia switch provided by the invention based on three-stage bistable state girder construction is completed by pure mechanic structure
Closure-break function of switch switchs in the course of work and does not use other device auxiliary switch function such as electrostatic, electromagnetism or electric heating
Can, have the strong feature of anti-electromagnetic interference capability;
(2) the MEMS inertia switch provided by the invention based on three-stage bistable state girder construction has self-locking function, uses
Bistable mechanism completes the locking after closing the switch, and revocation excitation acceleration, switch are still able to maintain contact steady closure after closure,
With very strong resistance to mechanical vibration ability;
(3) under the effect of given backward acceleration, switch can complete unlocking function, and switch may be reused;
(4) first mass blocks are the structure with comb teeth, can provide enough air dampings to the movement of the first mass block,
Reach cushioning effect.Meanwhile interdigitated electrode structure structure can limit first order mass block.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention;At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of MEMS inertia switch based on three-stage bistable state girder construction characterized by comprising switch housing, bistable
State mechanism and switch auxiliary body, the switch auxiliary body and bistable mechanism are arranged inside the switch housing, and
Acceleration is set gradually on direction;
The switch auxiliary body includes spring body and the first mass block, the both ends of the spring body respectively with first mass
Block and the switch housing inner wall are connected;
The bistable mechanism includes three-stage girder construction and the second mass block, and the three-stage girder construction includes the first girder construction
With the second girder construction, first girder construction includes the first flexible beam, the second flexible beam and buckstay, and the bistable mechanism exists
When the first stable position, first flexible beam and the second flexible beam are not conllinear horizontal beam, and the buckstay is cant beam, institute
It states first flexible beam one end to be fixedly connected with switch housing side wall, the other end of first flexible beam and one end of buckstay are solid
Fixed connection, the other end of the buckstay are fixedly connected with one end of second flexible beam, second flexible beam it is another
End is fixedly connected with the side of second mass block, and first girder construction and the second girder construction are about second mass block
Central axes be symmetrical arranged;
The switch housing with second mass block relative position at be provided with switch contact;
First mass block is oppositely arranged with second mass block, and the quality of first mass block is greater than second matter
The quality of gauge block, the MEMS inertia switch by setting acceleration when, first mass block under the action of inertia, with
The second mass block contact, the active force in acceleration direction is generated to second mass block, and the second mass block edge adds
Directional velocity movement, presses the switch contact.
2. the MEMS inertia switch according to claim 1 based on three-stage bistable state girder construction, which is characterized in that described
The quantity of three-stage girder construction is 4N1Root, the bistable mechanism is in the first stable position, 4N1Three-stage girder construction described in root
It is parallel to each other, wherein N1For positive integer.
3. the MEMS inertia switch according to claim 1 based on three-stage bistable state girder construction, which is characterized in that described
First flexible beam length is less than the rigid beam length, and the described first flexible beam length and the second flexible beam length are identical.
4. the MEMS inertia switch according to claim 1 or 2 based on three-stage bistable state girder construction, which is characterized in that
The quantity of the spring body be it is multiple, the spring body the two sidewalls of first mass block be symmetrical arranged, the spring body
One end for folded spring beam, the folded spring beam is fixedly connected with the side wall of the switch case, the other end and described the
The side wall of one mass block is fixedly connected, and first mass block is supported and fixed in the switch case by the folded spring beam
Portion.
5. the MEMS inertia switch according to claim 4 based on three-stage bistable state girder construction, which is characterized in that described
Spring body is by N2Root folded spring beam composition, wherein N2For positive integer.
6. the MEMS inertia switch according to claim 4 or 5 based on three-stage bistable state girder construction, which is characterized in that
The quantity of the spring body is 4, is symmetrically disposed on the upper and lower part of the opposite two sidewalls of first mass block.
7. the MEMS inertia switch according to claim 4 based on three-stage bistable state girder construction, which is characterized in that described
The side wall of first mass block and the inner sidewall of the switch case are tooth comb-type structure, the stripping fork type knot of first mass block
Structure and the tooth comb-type structure of the switch case match setting, and fit system is clearance fit.
8. the MEMS inertia switch according to claim 1 based on three-stage bistable state girder construction, which is characterized in that described
It switchs auxiliary body to be process on soi wafer using two-sided etching technics, wherein first mass block is by soi wafer
Bottom and device layer be process, the spring body is process by the device layer of soi wafer.
9. the MEMS inertia switch according to claim 1 based on three-stage bistable state girder construction, which is characterized in that described
Bistable mechanism is process on soi wafer using two-sided etching technics, wherein second mass block is by soi wafer
Bottom and device layer are process, and the three-stage beam is process by the device layer of soi wafer.
10. the MEMS inertia switch according to claim 1 based on three-stage bistable state girder construction, which is characterized in that institute
Switch case is stated to be process in the bottom and device layer of soi wafer using two-sided etching technics.
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US20040020968A1 (en) * | 2000-07-18 | 2004-02-05 | Larry Howell | Compliant apparatus and method |
CN101288137A (en) * | 2005-10-14 | 2008-10-15 | Nxp股份有限公司 | Mems tunable device |
CN101799086A (en) * | 2010-01-08 | 2010-08-11 | 西安电子科技大学 | Multistable mechanism design method based on single flexible bistable mechanism |
CN101837947A (en) * | 2010-05-14 | 2010-09-22 | 西安电子科技大学 | Multistable mechanism realizing method based on single bistable mechanism and external characteristics thereof |
CN102157277A (en) * | 2010-12-31 | 2011-08-17 | 大连理工大学 | Cascaded-bistable-mechanism-based tri-stable or quaternary-stable mechanism and changing method thereof |
CN106908718A (en) * | 2017-01-18 | 2017-06-30 | 沈阳理工大学 | The test system of threshold value tunable mems inertia switch |
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2018
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Publication number | Priority date | Publication date | Assignee | Title |
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US20040020968A1 (en) * | 2000-07-18 | 2004-02-05 | Larry Howell | Compliant apparatus and method |
CN101288137A (en) * | 2005-10-14 | 2008-10-15 | Nxp股份有限公司 | Mems tunable device |
CN101799086A (en) * | 2010-01-08 | 2010-08-11 | 西安电子科技大学 | Multistable mechanism design method based on single flexible bistable mechanism |
CN101837947A (en) * | 2010-05-14 | 2010-09-22 | 西安电子科技大学 | Multistable mechanism realizing method based on single bistable mechanism and external characteristics thereof |
CN102157277A (en) * | 2010-12-31 | 2011-08-17 | 大连理工大学 | Cascaded-bistable-mechanism-based tri-stable or quaternary-stable mechanism and changing method thereof |
CN106908718A (en) * | 2017-01-18 | 2017-06-30 | 沈阳理工大学 | The test system of threshold value tunable mems inertia switch |
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