CN109243504A - Reference current generating circuit, nonvolatile memory and reference current production method - Google Patents
Reference current generating circuit, nonvolatile memory and reference current production method Download PDFInfo
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- CN109243504A CN109243504A CN201810999246.2A CN201810999246A CN109243504A CN 109243504 A CN109243504 A CN 109243504A CN 201810999246 A CN201810999246 A CN 201810999246A CN 109243504 A CN109243504 A CN 109243504A
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- effect tube
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Abstract
The invention discloses a kind of reference current generating circuit, nonvolatile memory and reference current production methods, are related to non-volatile memory technologies field.The reference current generating circuit includes two memory devices parallel with one another, and respectively with concatenated two gating switches of two memory devices, the other end of two memory devices, which is connected to, programs COM line and erasing COM line；Two gating switches are connected to first group of field-effect tube far from one end of memory device；The grid and source electrode of the first field-effect tube in first group of field-effect tube are also connected with the grid of the second field-effect tube in second group of field-effect tube, and the source electrode of second group of field-effect tube is connected to the output end of reference current generating circuit.Technical solution of the present invention in use, can be according to the variation of programmed and erased cycle-index and temperature etc., and accordingly adjusts according to influence degree the number of first group of field-effect tube and second group of field-effect tube, it is ensured that reference current has enough current margins.
Description
Technical field
The present invention relates to non-volatile memory technologies field, more particularly to reference current generating circuit, non-volatile
Memory and reference current production method.
Background technique
What nonvolatile memory usually relied on reference current to distinguish memory device is that value 0(is less than reference current) or
Value 1 (is greater than reference current).In order to generate reference current, the designs of many nonvolatile memories is by nonvolatile memory
Bit location as reference cell.In the prior art, there are many reference current production methods of nonvolatile memory, still
With programming erasing cycle-index, time, technique difference, source voltage and variation of temperature etc., current reference current can not
The curent change of memory device is fully compensated, so that reference current be caused to become smaller apart from the sense margin of memory device electric current.
Summary of the invention
The main purpose of the present invention is to provide a kind of reference current generating circuit, nonvolatile memory and reference currents
Production method, it is intended to allow the reference current generated that programming erasing cycle-index, time, technique, supply voltage is fully compensated
With the variation bring curent change of temperature, guarantee maximum current detecting nargin.
To achieve the above object, the present invention provides a kind of reference current generating circuit, the reference current generating circuit packet
Include two memory devices parallel with one another, and respectively with concatenated two gating switches of two memory devices, two memories
The other end of part is connected to programming COM line and erasing COM line；Two gating switches far from the memory device one
End is connected to first group of field-effect tube；The grid and source electrode of the first field-effect tube in first group of field-effect tube are also connected with
The grid of second field-effect tube in second group of field-effect tube, the source electrode of second group of field-effect tube are connected to the reference current
The output end of generation circuit.
Preferably, the drain electrode of first field-effect tube and the drain electrode of second field-effect tube are grounded.
Preferably, first group of field-effect tube includes m field-effect tube in parallel, and second group of field-effect tube includes
N field-effect tube in parallel.
Preferably, the circuit further includes comparator, and the first input end of the comparator is connected to memory cell current
Output end, the second input terminal of the comparator are connected to the output end of the reference circuit generation circuit, the comparator ratio
The cell current and the reference current simultaneously export comparison result.
Preferably, two memory devices of the parallel connection and the gating switch both being connected to constitute storage stack
Part, multi-bank memory part constitute reference cell.
The present invention also provides a kind of nonvolatile memory, the memory includes storage unit and benchmark as mentioned
Current generating circuit, the reference current generating circuit include reference cell and the first group of field effect for being connected to the reference cell
Ying Guan, the reference cell and the storage unit are located in the same N trap.
It preferably, include multi-bank memory part in the reference cell, wherein the memory device of half is to have programmed benchmark
Unit, the other half memory device are to have wiped reference cell.
Preferably, the electric current for having programmed reference cell is matched with the memory cell current holding programmed；It is described
The electric current for wiping reference cell is matched with the memory cell current wiped holding.
The present invention also provides a kind of reference current production methods, comprising the following steps:
When carrying out erasing operation to nonvolatile memory memory device, the memory device in reference cell is switched to erasing
COM line, synchronous erasing have programmed reference cell, to obtain erasing electric current；
The BL of the memory device of half in reference cell is terminated into logical high level, the memory device of half in reference cell is carried out
Programming operation, to obtain program current；
By program current and erasing electric current through first group of field-effect tube and second group of field-effect tube mirror image, to obtain reference current.
Preferably, first group of field-effect tube includes m field-effect tube in parallel, and second group of field-effect tube includes
N field-effect tube in parallel.
Technical solution of the present invention connects programming COM line and erasing COM line with gating switch by memory device, and will programming
Electric current and erasing electric current pass through first group of field-effect tube and second group of field-effect tube mirror image to obtain reference current, non-volatile
In memory use process, can according to the variation of programmed and erased cycle-index, time, process corner, supply voltage and temperature etc.,
And the number of first group of field-effect tube and second group of field-effect tube is accordingly adjusted according to influence degree, it is ensured that reference current without
By be apart from program current or erasing electric current have enough current margins.
Detailed description of the invention
Fig. 1 is the circuit diagram of reference current generating circuit of the present invention；
Fig. 2 is benchmark current detecting amplifying circuit；
Fig. 3 is that reference cell and storage unit circuit arrange schematic diagram in the present invention；
Fig. 4 is that reference cell and storage unit circuit arrange diagrammatic cross-section in the present invention；
Fig. 5 is reference current production method flow diagram of the present invention.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
The following further describes the present invention with reference to the drawings.
As shown in Figure 1, a kind of reference current generating circuit, the reference current generating circuit includes two parallel with one another
Memory device Mref_program and Mref_erase, and respectively with the concatenated two gating switch Q1 of two memory devices and
Q2, the other end of two memory devices Mref_program and Mref_erase are connected to programming COM line (common
Line, common wire) COM_ref_program and erasing COM line COM_ref_erase；Two gating switch Q1 and Q2 are remote
One end from the memory device is connected to first group of field-effect tube；The first field-effect tube M1 in first group of field-effect tube
Grid and source electrode be also connected with the grid of the second field-effect tube M2 in second group of field-effect tube, second group of field-effect tube
Source electrode is connected to the output end Iref of the reference current generating circuit.
Technical solution of the present invention connects programming COM line and erasing COM line with gating switch by memory device, and will programming
Electric current and erasing electric current pass through first group of field-effect tube and second group of field-effect tube mirror image to obtain reference current, non-volatile
In memory use process, can according to programming or the variation of erasing cycle-index, time, process corner, supply voltage and temperature etc.,
And the number of first group of field-effect tube and second group of field-effect tube is accordingly adjusted according to influence degree, it is ensured that reference current without
By be apart from program current or erasing electric current have enough current margins.
In a particular embodiment, the drain electrode of the first field-effect tube M1 and the drain electrode of the second field-effect tube M2 connect
Ground.
Preferably, first group of field-effect tube includes m field-effect tube in parallel, and second group of field-effect tube includes
N field-effect tube in parallel.Specifically, m and n is positive integer, and the numerical value of the two can be according to different nonvolatile memories
Usage scenario by user's sets itself.
As shown in Fig. 2, the circuit further includes comparator, the first input end of the comparator is connected to storage unit electricity
Output end Icell is flowed, the second input terminal of the comparator is connected to the output end Iref of the reference circuit generation circuit, institute
It states the comparator cell current and the reference current and exports comparison result Vout.
Specifically, as shown in Figure 1, memory cell current output end Icell is connected to storage unit by gating switch Q3
Memory device Mcell, the memory device Mcell of storage unit and the memory device Mref_erase of reference cell it is in parallel, and
The memory device Mcell of storage unit is connected to COM line.Specifically, the source electrode of the memory device Mcell of storage unit is connected to
COM line drains and is connected to gating switch Q3, and the grid of the memory device Mref_erase of grid and reference cell connects, and even
It is connected to CGi(control gate i, i) line is deleted in control.The grid of gating switch Q1, Q2 and Q3 are connected with each other, and are connected to WLi
(word line i, wordline i).
Preferably, two memory devices of the parallel connection and the gating switch both being connected to constitute storage stack
Part, multi-bank memory part constitute reference cell.
The present invention also provides a kind of nonvolatile memories, and as shown in Figure 3 and Figure 4, the memory includes storage unit
And reference current generating circuit as described above, the reference current generating circuit include reference cell and are connected to the base
First group of field-effect tube of quasi- unit, the reference cell and the storage unit are located in the same N trap.Reference cell is same to be deposited
For storage unit among the same N trap, current characteristics can keep the current characteristics of the storage unit of same surrounding to exactly match.
As shown in Fig. 2, nonvolatile memory further includes detection amplifying circuit, detection amplifying circuit stores list by comparing
The size of elementary current and reference cell current, judges whether storage unit programs.When memory cell current is greater than reference cell electricity
It is programming unit when stream, exporting is ' 1 '；When memory cell current is less than reference cell current, it is erasing unit, exports and be
‘0’。
Reference cell and storage unit circuit Rankine-Hugoniot relations are as shown in Figure 3: in dotted line frame is reference cell, reference cell
Middle half is the reference cell programmed, and half is the reference cell wiped.It is storage unit outside dotted line frame.On the basis of Fig. 4
Unit and storage unit sectional view, reference cell and storage unit are located in the same N trap.
It preferably, include multi-bank memory part in the reference cell, wherein the memory device of half is to have programmed benchmark
Unit, the other half memory device are to have wiped reference cell.
Preferably, the electric current for having programmed reference cell is matched with the memory cell current holding programmed；It is described
The electric current for wiping reference cell is matched with the memory cell current wiped holding.
As shown in figure 5, the present invention also provides a kind of reference current production method of nonvolatile memory, including following step
It is rapid:
When carrying out erasing operation to nonvolatile memory memory device, the memory device in reference cell is switched to erasing
COM line, synchronous erasing have programmed reference cell, to obtain erasing electric current；
The BL of the memory device of half in reference cell is terminated into logical high level, the memory device of half in reference cell is carried out
Programming operation, to obtain program current；
By program current and erasing electric current through first group of field-effect tube and second group of field-effect tube mirror image, to obtain reference current.
When carrying out erasing operation to nonvolatile memory every time, while to the reference cell programmed in reference cell
Erasing operation is carried out, i.e., as shown in Fig. 1, Fig. 3, the end COM_ref_program and the end COM_ref_erase are also chosen simultaneously
Add positive high voltage, reference cell is wiped；Then programming operation is done to the half of reference cell again, i.e., such as institute in Fig. 1, Fig. 3
Show, BL_ref_program adds positive high voltage when programming, and BL_ref_erase adds 0V；To guarantee reference cell and storage unit
Programming or erasing cycle-index are consistent, so that the current characteristics of reference cell and memory cell current characteristics match.
Preferably, first group of field-effect tube includes m field-effect tube in parallel, and second group of field-effect tube includes
N field-effect tube in parallel.
Reference current is (to have been wiped by program current (electric current of the reference cell programmed) plus erasing electric current
Reference cell current) the sum of, then obtained by first group of field-effect tube and second group of field-effect tube current mirror.It is specific logical
Following equatioies are crossed to be calculated:
Wherein, Iref is benchmark electric current, and Iref_program is program current, and Iref_erase is erasing electric current.
It should be understood that the above is only a preferred embodiment of the present invention, the scope of the patents of the invention cannot be therefore limited,
It is all to utilize equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, it is applied directly or indirectly in
Other related technical areas are included within the scope of the present invention.
Claims (10)
1. a kind of reference current generating circuit, which is characterized in that the reference current generating circuit includes two parallel with one another
Memory device, and respectively with concatenated two gating switches of two memory devices, the other end of two memory devices connects respectively
It is connected to programming COM line and erasing COM line；Two gating switches are connected to first group of field far from one end of the memory device
Effect pipe；The grid and source electrode of the first field-effect tube in first group of field-effect tube are also connected in second group of field-effect tube
The source electrode of the grid of second field-effect tube, second group of field-effect tube is connected to the output of the reference current generating circuit
End.
2. reference current generating circuit according to claim 1, which is characterized in that the drain electrode of first field-effect tube and
The drain electrode of second field-effect tube is grounded.
3. reference current generating circuit according to claim 1, which is characterized in that first group of field-effect tube includes m
The field-effect tube of a parallel connection, second group of field-effect tube include n field-effect tube in parallel.
4. reference current generating circuit according to claim 1, which is characterized in that the circuit further includes comparator, institute
The first input end for stating comparator is connected to memory cell current output end, and the second input terminal of the comparator is connected to described
The output end of reference circuit generation circuit, the comparator cell current and the reference current and export compare knot
Fruit.
5. reference current generating circuit according to claim 1, which is characterized in that two memory devices of the parallel connection with
And it is connected to the gating switch composition storage stack part of the two, multi-bank memory part constitutes reference cell.
6. a kind of nonvolatile memory, which is characterized in that the memory includes storage unit and such as claim 1 to 5
The reference current generating circuit of nonvolatile memory described in any one of item, the reference current generating circuit includes benchmark
Unit and first group of field-effect tube for being connected to the reference cell, the reference cell are located at same with the storage unit
In N trap.
7. nonvolatile memory according to claim 6, which is characterized in that include that multiple groups store in the reference cell
Device, wherein the memory device of half is to have programmed reference cell, the other half memory device is to have wiped reference cell.
8. nonvolatile memory according to claim 7, which is characterized in that the electric current for having programmed reference cell with
The memory cell current programmed keeps matching；The electric current for having wiped reference cell is protected with the memory cell current wiped
Hold matching.
9. a kind of reference current production method, which comprises the following steps:
When carrying out erasing operation to nonvolatile memory memory device, the memory device in reference cell is switched to erasing
COM line, synchronous erasing have programmed reference cell, to obtain erasing electric current；
The BL of the memory device of half in reference cell is terminated into logical high level, the memory device of half in reference cell is carried out
Programming operation, to obtain program current；
By program current and erasing electric current through first group of field-effect tube and second group of field-effect tube mirror image, to obtain reference current.
10. reference current production method according to claim 9, which is characterized in that first group of field-effect tube includes m
The field-effect tube of a parallel connection, second group of field-effect tube include n field-effect tube in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810999246.2A CN109243504A (en) | 2018-08-30 | 2018-08-30 | Reference current generating circuit, nonvolatile memory and reference current production method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810999246.2A CN109243504A (en) | 2018-08-30 | 2018-08-30 | Reference current generating circuit, nonvolatile memory and reference current production method |
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| CN109243504A true CN109243504A (en) | 2019-01-18 |
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| CN1779857A (en) * | 2004-11-09 | 2006-05-31 | 松下电器产业株式会社 | Non-volatile semiconductor memory device and method for reading the same |
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| US8069382B2 (en) * | 2007-10-29 | 2011-11-29 | Micron Technology, Inc. | Memory cell programming |
| CN103874966A (en) * | 2011-10-14 | 2014-06-18 | 矢崎总业株式会社 | Output setting device of constant current circuit |
| CN104715781A (en) * | 2013-12-16 | 2015-06-17 | 三星电子株式会社 | Sense amplifier, semiconductor memory device using thereof and read method thereof |
| CN104766623A (en) * | 2015-04-20 | 2015-07-08 | 北京航空航天大学 | Circuit for enhancing STT-MRAM (Spin Transfer Torque-Magnetoresistive Random Access Memory) reading reliability by using substrate bias voltage feedback |
-
2018
- 2018-08-30 CN CN201810999246.2A patent/CN109243504A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779857A (en) * | 2004-11-09 | 2006-05-31 | 松下电器产业株式会社 | Non-volatile semiconductor memory device and method for reading the same |
| CN1892905A (en) * | 2005-06-03 | 2007-01-10 | 秦蒙达股份公司 | Sensing scheme for a non-volatile semiconductor memory cell |
| US8069382B2 (en) * | 2007-10-29 | 2011-11-29 | Micron Technology, Inc. | Memory cell programming |
| CN103874966A (en) * | 2011-10-14 | 2014-06-18 | 矢崎总业株式会社 | Output setting device of constant current circuit |
| CN104715781A (en) * | 2013-12-16 | 2015-06-17 | 三星电子株式会社 | Sense amplifier, semiconductor memory device using thereof and read method thereof |
| CN104766623A (en) * | 2015-04-20 | 2015-07-08 | 北京航空航天大学 | Circuit for enhancing STT-MRAM (Spin Transfer Torque-Magnetoresistive Random Access Memory) reading reliability by using substrate bias voltage feedback |
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