CN109216183A - A kind of dry method etch technology and its application of GaAs - Google Patents
A kind of dry method etch technology and its application of GaAs Download PDFInfo
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- CN109216183A CN109216183A CN201810959093.9A CN201810959093A CN109216183A CN 109216183 A CN109216183 A CN 109216183A CN 201810959093 A CN201810959093 A CN 201810959093A CN 109216183 A CN109216183 A CN 109216183A
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- gaas
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- cavity
- semiconductor laser
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 29
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 28
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000460 chlorine Substances 0.000 claims abstract description 18
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 18
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 18
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 14
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 14
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 8
- 230000000873 masking effect Effects 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of dry method etch technology of GaAs and its applications.Specifically, the technique is in gallium arsenide film surface deposition SiO2Then film layer photoetching and corrodes SiO out2Mask layer；Using inductively coupled plasma etching technique in SiO2GaAs is etched under the masking of mask layer, etching gas be chlorine and boron chloride.The present invention does not generate lateral etch, etches the GaAs side wall come and bottom surface smoother.
Description
Technical field
The present invention relates to a kind of dry method etch technologies of GaAs.The invention further relates to the applications of the technique.
Background technique
It is excellent that vertical-cavity-face emitting semiconductor laser (VCSEL) has that the angle of divergence is small, resonant cavity is short, threshold current is low etc.
Point makes it have a wide range of applications in terms of optical information, optical interconnection and fiber coupling.Its structure includes active layer, p-type
With N-type Bragg mirror and the resonant cavity being clipped in the middle.P-type and N-type Bragg mirror are all made of multilayer epitaxial piece, with
Reach 99% reflectivity.In order to reach low threshold current, it will usually have one layer of high aluminous layer, high aluminous layer is by part oxygen
It is melted into alumina insulating layer, form high value restricted area can reduce in this way for carrying out the limitation and optical confinement to electric current
Threshold current and raising electro-optical efficiency.The threshold current that further reduced device of oxide-confined process, and
Electro-optical efficiency is improved, is to realize that photoelectricity limits used technical way in current VCSEL element manufacturing.Carry out
Before oxidation technology, etching technique is used to produce oxidation window to expose layer to be oxidized.
Oxide-confined process generallys use wet oxidation method, i.e. high alumina between active layer and p-type Bragg mirror
The AlGaAs layer of component is aoxidized, and is generated aluminium oxide from lateral oxidation using water vapour, is formed high value restricted area.Therefore,
VCSEL generallys use mesa structure, so that high aluminium oxide layers side be made to be exposed in water vapour.It is to connect that mesa structure, which needs side wall,
Nearly 90 degree, without lateral etch, and side wall and bottom surface all smoothers is required, can reduce leakage current in this way, and increase
The electro-optical efficiency of laser.VCSEL mesa structure generallys use wet etching method and is prepared.Traditional GaAs wet process
Etching process brings the side wall of out of plumb, and corrosion rate is uncontrollable, is easy to produce lateral etch, and mesa dimensions cannot be controlled accurately
System.For VCSEL, such mesa structure can generate big leakage current, the serious electro-optical efficiency for reducing laser.
Summary of the invention
One of the objects of the present invention is to provide a kind of dry method etch technology of GaAs, which does not generate lateral erosion
It carves, etches the GaAs side wall come and bottom surface is smooth.
An object of the present invention is to be achieved through the following technical solutions: a kind of dry method etch technology of GaAs,
Gallium arsenide film surface deposition SiO2Then film layer photoetching and corrodes SiO out2Mask layer；It is etched using inductively coupled plasma
Technology is in SiO2GaAs is etched under the masking of mask layer, etching gas be chlorine (Cl2) and boron chloride
(BCl3)。
The flow-rate ratio of the chlorine and boron chloride is 1:4-1:1.
The etch-rate of the etch process is in 1um/min or more.It is preferred that 1-2um/min.
The second purpose of the present invention is to provide the applications of above-mentioned technique.More particularly to the technique in vertical-cavity surface-emitting half
The application of conductor laser mesa structure etching.
The three of the object of the invention are to provide a kind of vertical-cavity-face emitting semiconductor laser mesa structure etch process.It should
Technique etches the GaAs verticality come close to 90 degree, and side wall and bottom surface smoother, meets wanting for VCSEL laser
It asks.
The third object of the present invention is to be achieved through the following technical solutions: a kind of vertical-cavity-face emitting semiconductor laser
Mesa structure etch process, in molding vertical-cavity-face emitting semiconductor laser epitaxial wafer surface deposition SiO2Film layer, so
Photoetching and corrode SiO out afterwards2Mesa mosk layer；Using inductively coupled plasma etching technique in SiO2Mesa mosk layer is covered
Cover it is lower GaAs is etched to form mesa structure, etching gas be chlorine and boron chloride.
The flow-rate ratio of the chlorine and boron chloride is 1:1-4.
The etch-rate of the etch process is in 1um/min or more.It is preferred that 1-2um/min.
The invention has the following advantages:
1. the dry method etch technology of GaAs provided by the invention does not generate lateral etch, the GaAs side wall come is etched
It is smooth with bottom surface.It is applied to the etching of vertical-cavity-face emitting semiconductor laser mesa structure, etches the GaAs come and hang down
Straight degree is close to 90 degree, and side wall and bottom surface smoother, meets the requirement of VCSEL laser.
Detailed description of the invention
Fig. 1 is the etching picture generated using wet etching, since wet etching is isotropic etching, so lateral erosion
It carves than more serious.
Fig. 2 is using dry etching gas ratio: Cl2:BCl3Etching picture when=4:1, lateral etch is serious, side wall
It is relatively rough with bottom.
Fig. 3 is using dry etching gas ratio: Cl2:BCl3Etching picture when=1:3, side wall do not have close to 90 degree
Lateral etch, and side wall and bottom all smoothers.
Specific embodiment
In order to more clearly state the present invention, the present invention is further described with reference to the accompanying drawing.
Embodiment one
It is formed sediment using Metalorganic Chemical Vapor Deposition on molding vertical-cavity-face emitting semiconductor laser epitaxial wafer surface
Product forms SiO2Then film layer photoetching and corrodes SiO out2Mesa mosk layer.Existed using inductively coupled plasma etching technique
The SiO of upper and lower two table tops2GaAs is etched to form mesa structure under the masking of mesa mosk layer, etching gas is yes
Chlorine (Cl2) and boron chloride (BCl3), the flow-rate ratio of chlorine and boron chloride is 1:3, etch-rate 1um/min, and etching is deep
Degree is probably in 4um or so.The sidewall profile of mesa structure as shown in figure 3, side wall close to 90 degree, without lateral etch, and side
Wall and bottom all smoothers.Such pattern can reduce electric leakage, be conducive to the passivation on surface, and VCSEL can be improved
The electro-optical efficiency of laser.
Embodiment two
It is formed sediment using Metalorganic Chemical Vapor Deposition on molding vertical-cavity-face emitting semiconductor laser epitaxial wafer surface
Product forms SiO2Then film layer photoetching and corrodes SiO out2Mesa mosk layer.Existed using inductively coupled plasma etching technique
The SiO of upper and lower two table tops2GaAs is etched to form mesa structure under the masking of mesa mosk layer, etching gas is yes
Chlorine (Cl2) and boron chloride (BCl3), the flow-rate ratio of chlorine and boron chloride is 1:3, etch-rate 2um/min, and etching is deep
Degree is probably in 4um or so.Mesa side walls are close to 90 degree, without lateral etch, and side wall and bottom all smoothers.
Embodiment three
It is formed sediment using Metalorganic Chemical Vapor Deposition on molding vertical-cavity-face emitting semiconductor laser epitaxial wafer surface
Product forms SiO2Then film layer photoetching and corrodes SiO out2Mesa mosk layer.Existed using inductively coupled plasma etching technique
The SiO of upper and lower two table tops2GaAs is etched to form mesa structure under the masking of mesa mosk layer, etching gas is yes
Chlorine (Cl2) and boron chloride (BCl3), the flow-rate ratio of chlorine and boron chloride is 1:3, etch-rate 4um/min, and etching is deep
Degree is probably in 4um or so.Mesa side walls are close to 90 degree, without lateral etch, and side wall and bottom all smoothers.
Comparative example one
It is formed sediment using Metalorganic Chemical Vapor Deposition on molding vertical-cavity-face emitting semiconductor laser epitaxial wafer surface
Product forms SiO2Then film layer photoetching and corrodes SiO out2Mesa mosk layer.Existed using inductively coupled plasma etching technique
The SiO of upper and lower two table tops2GaAs is etched to form mesa structure under the masking of mesa mosk layer, etching gas is yes
Chlorine (Cl2) and boron chloride (BCl3), the flow-rate ratio of chlorine and boron chloride is 4:1, etch-rate 1um/min, and etching is deep
Degree is probably in 4um or so.Mesa structure lateral etch is serious, and side wall and bottom are relatively rough.
The present invention can be summarized with others without prejudice to the concrete form of spirit or essential characteristics of the invention.Of the invention
Above-described embodiment can only all be considered the description of the invention rather than limit that all substantial technologicals according to the present invention are to above
Any subtle modifications, equivalent variations and modifications, belong in the range of technical solution of the present invention made by embodiment.Such as chlorine and
For the flow-rate ratio of boron chloride between 1:4-1:1, the etch-rate of etch process is able to achieve the present invention in 1um/min or more.
Claims (9)
1. a kind of dry method etch technology of GaAs, characterized in that in gallium arsenide film surface deposition SiO2Film layer, then photoetching
And corrode SiO out2Mesa mosk layer；Using inductively coupled plasma etching technique in SiO2To arsenic under the masking of mask layer
Gallium is etched, etching gas be chlorine and boron chloride.
2. the dry method etch technology of GaAs according to claim 1, characterized in that the stream of the chlorine and boron chloride
Amount is than being 1:4-1:1.
3. the dry method etch technology of GaAs according to claim 1, characterized in that the etch-rate is in 1um/min
More than.
4. the dry method etch technology of GaAs according to claim 3, characterized in that the etch-rate is 1-2um/
min。
5. the dry method etch technology of the described in any item GaAs of claim 1-4 is in vertical-cavity-face emitting semiconductor laser platform
The application of face structure etching.
6. a kind of vertical-cavity-face emitting semiconductor laser mesa structure etch process, characterized in that in molding vertical cavity surface
Launching semiconductor laser epitaxial wafer surface deposition SiO2Then film layer photoetching and corrodes SiO out2Mesa mosk layer；Use feeling
Answer coupled plasma etching technique in SiO2GaAs is etched to form mesa structure under the masking of mesa mosk layer, is lost
Carving gas to be is chlorine and boron chloride.
7. vertical-cavity-face emitting semiconductor laser mesa structure etch process according to claim 6, characterized in that institute
The flow-rate ratio for stating chlorine and boron chloride is 1:1-4.
8. vertical-cavity-face emitting semiconductor laser mesa structure etch process according to claim 6, characterized in that institute
Etch-rate is stated in 1um/min or more.
9. vertical-cavity-face emitting semiconductor laser mesa structure etch process according to claim 8, characterized in that institute
Stating etch-rate is 1-2um/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810959093.9A CN109216183A (en) | 2018-08-22 | 2018-08-22 | A kind of dry method etch technology and its application of GaAs |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810959093.9A CN109216183A (en) | 2018-08-22 | 2018-08-22 | A kind of dry method etch technology and its application of GaAs |
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| Publication Number | Publication Date |
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| CN109216183A true CN109216183A (en) | 2019-01-15 |
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| CN201810959093.9A Pending CN109216183A (en) | 2018-08-22 | 2018-08-22 | A kind of dry method etch technology and its application of GaAs |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111817138A (en) * | 2020-08-31 | 2020-10-23 | 江西铭德半导体科技有限公司 | Edge-emitting high-power laser and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887788A (en) * | 2017-04-27 | 2017-06-23 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical cavity surface emitting laser and preparation method thereof |
| US20170271840A1 (en) * | 2016-03-16 | 2017-09-21 | Sumitomo Electric Industries, Ltd. | Method for fabricating surface emitting laser |
| CN107195701A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
-
2018
- 2018-08-22 CN CN201810959093.9A patent/CN109216183A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170271840A1 (en) * | 2016-03-16 | 2017-09-21 | Sumitomo Electric Industries, Ltd. | Method for fabricating surface emitting laser |
| CN106887788A (en) * | 2017-04-27 | 2017-06-23 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical cavity surface emitting laser and preparation method thereof |
| CN107195701A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111817138A (en) * | 2020-08-31 | 2020-10-23 | 江西铭德半导体科技有限公司 | Edge-emitting high-power laser and manufacturing method thereof |
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Application publication date: 20190115 |