CN109213690A - L2P table reconstruction method and related device - Google Patents
L2P table reconstruction method and related device Download PDFInfo
- Publication number
- CN109213690A CN109213690A CN201811108586.8A CN201811108586A CN109213690A CN 109213690 A CN109213690 A CN 109213690A CN 201811108586 A CN201811108586 A CN 201811108586A CN 109213690 A CN109213690 A CN 109213690A
- Authority
- CN
- China
- Prior art keywords
- count flag
- chinese ink
- brush dipped
- ssd
- lower electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 230000015654 memory Effects 0.000 claims abstract description 252
- 238000012545 processing Methods 0.000 claims abstract description 33
- 239000000976 ink Substances 0.000 claims description 123
- 230000005611 electricity Effects 0.000 claims description 66
- 238000013507 mapping Methods 0.000 claims description 25
- 238000004590 computer program Methods 0.000 claims description 9
- 230000008439 repair process Effects 0.000 claims description 4
- 230000002159 abnormal effect Effects 0.000 abstract description 13
- 238000011084 recovery Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000003672 processing method Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 13
- 239000000872 buffer Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012464 large buffer Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/0292—User address space allocation, e.g. contiguous or non contiguous base addressing using tables or multilevel address translation means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The application discloses a reconstruction method of an L2P table, which comprises the following steps: when the SSD is powered on abnormally, acquiring a power-off counting mark of a last-flushed L2P table storage block from a nonvolatile memory; judging whether the power-off counting mark is the same as the updated power-off counting mark or not; if yes, the L2P table is flashed from the non-volatile memory to the volatile memory; if not, the L2P table is written into the volatile memory from the nonvolatile memory, and L2P reconstruction processing is executed according to the L2P table to obtain a reconstructed L2P table. Whether a complete L2P table is stored in the nonvolatile memory is judged through the acquired power-off counting mark, and then corresponding operation is carried out on the L2P table, so that the recovery speed and the stability of abnormal power-on of the SSD are improved. The application also discloses a reconstruction device of the L2P table, an abnormal power-off processing method of the SSD, an abnormal power-off processing device and a computer readable storage medium, which have the beneficial effects.
Description
Technical field
This application involves field of computer technology, in particular to a kind of method for reconstructing of L2P table, reconstructing device, SSD it is different
Often lower electric treatment method, abnormal lower electric treatment device, device and computer readable storage medium.
Background technique
When using SSD (Solid State Drives solid state hard disk) storing data content, need to use FTL (Flash
Translation Layer flash translation layer (FTL)) mapping table, also referred to as L2P table (Logical To Physical Table logic
Mapping table of the block to physical block), for recording host logical address space (LBA Logical Block Address logical block
Address) arrive Flash flash memory physical address space (PBA Logical Block Address logical block address) mapping relations.
Specifically, L2P table be it is a with LBA for index, PBA is the sequence list of content.SSD at work, can patrol each user
It collects data and writes with a brush dipped in Chinese ink flash memory address space, while recording the logical address to the mapping relations of physical address, that is, L2P is recorded
In table.When host needs to read the data, the address LBA for sending the data is searched L2P table by LBA, looked for SSD, SSD
To corresponding flash memory physical space address (PBA), the data stored on Flash flash memory are read by PBA, are then returned to use
Family.L2P table is typically stored in Flash, when SSD is powered on, L2P table is read from Flash flash memory and is put into DDR, L2P is made
It can play the role of corresponding.When SSD works, user data is write with a brush dipped in Chinese ink to after Flash, and SSD master control can dynamically update L2P table,
And periodically or according to certain rule by the update part of whole part L2P table or L2P table write with a brush dipped in Chinese ink the additional space in Flash flash memory.
Generally during using SSD, there can be the case where powered-off fault, the storage capacitor carried in SSD will continue to
It is powered to SSD, before storage capacitor electricity exhausts, it is possible that the write buffer of the L2P saved in DDR is without all brushes
The case where writing complete.After powering on again to SSD, a new L2P table will can only be read from Flash, this part time new
When L2P table does not include last time power down, the mapping of data in Flash is write with a brush dipped in Chinese ink, that is, do not wrap in the L2P table read at this time
Mapping containing latest data, the case where will cause user data loss.
In order to solve this problem, the prior art is that SSD is carried out to depth recovery, rebuilds L2P table.Namely pass through PBA
The mode of scan full hard disk rebuilds L2P table, but the time-consuming rebuild is directly proportional to SSD amount of capacity, if it is the SSD of 2TB, carries out
The time of depth recovery can reach a few hours, the service performance of strong influence SSD.
Therefore, how to improve rebuild after powered-off fault L2P table speed be those skilled in the art's concern Important Problems.
Summary of the invention
The purpose of the application be to provide the method for reconstructing of L2P table a kind of, reconstructing device, SSD the lower electric treatment method of exception,
Abnormal lower electric treatment device, device and computer readable storage medium are judged non-volatile by the lower electric count flag of acquisition
Property memory in whether save complete L2P table, and then corresponding operation is carried out to the L2P table of different conditions, avoiding can not
The time differentiating the state of L2P table and being lost improves the resume speed that SSD is powered on extremely, enhances the stability of SSD.
In order to solve the above technical problems, the application provides a kind of method for reconstructing of L2P table, comprising:
When SSD is powered on extremely, the lower electricity for obtaining the L2P table memory block finally write with a brush dipped in Chinese ink from nonvolatile memory counts mark
Will；
Judge whether the lower electric count flag is identical as lower electric count flag is updated；Wherein, electricity counts under the update
Processing is updated to the lower electric count flag of the last one L2P table memory block when mark is electric at SSD to obtain；
If so, L2P table is write with a brush dipped in Chinese ink into volatile memory from the nonvolatile memory；
If it is not, then write with a brush dipped in Chinese ink the L2P table into the volatile memory from the nonvolatile memory, according to
The L2P table executes L2P reconstruction processing, obtains rebuilding L2P table.
Optionally, when SSD is powered on extremely, the lower electricity for the L2P table memory block finally write with a brush dipped in Chinese ink is obtained from nonvolatile memory
Count flag, comprising:
When SSD is powered on extremely, the L2P table memory block write with a brush dipped in Chinese ink to the end is searched from nonvolatile memory by dichotomy；
Obtain the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink.
Optionally, L2P reconstruction processing is executed according to the L2P table, obtains rebuilding L2P table, comprising:
It is scanned according to all data of the L2P table to the SSD, obtains mapping data to be repaired；
Mapping is executed to the mapping data to be repaired and repairs operation, obtains rebuilding L2P table；
The reconstruction L2P table is write with a brush dipped in Chinese ink in the volatile memory.
Optionally, when electric under the SSD, comprising:
Processing is updated to the lower electric count flag of the last one L2P table memory block, obtains updating lower electricity counting
Mark；
The lower electric count flag of the last one L2P table memory block is updated under the update electric count flag；
All L2P table memory blocks are write with a brush dipped in Chinese ink in nonvolatile memory.
Optionally, after all L2P table memory blocks being write with a brush dipped in Chinese ink nonvolatile memory, further includes:
Count flag electric under the update is write with a brush dipped in Chinese ink in the nonvolatile memory.
Optionally, L2P table is write with a brush dipped in Chinese ink into volatile memory from the nonvolatile memory, comprising:
The L2P table memory block finally write with a brush dipped in Chinese ink is determined from the nonvolatile memory；
First L2P table memory block is determined according to the sequence of addresses of the L2P table memory block；
The L2P table memory block that first L2P table memory block is write with a brush dipped in Chinese ink to the end, is successively read the volatibility and deposits
In reservoir, so that L2P table is write with a brush dipped in Chinese ink in the volatile memory.
The application also provides a kind of reconstructing device of L2P table, comprising:
Lower electricity count flag obtains module, when powering on extremely for SSD, finally writes with a brush dipped in Chinese ink from nonvolatile memory acquisition
The lower electric count flag of L2P table memory block；
Lower electricity count flag judgment module, for judge the lower electric count flag whether with update lower electric count flag phase
Together；Wherein, to the lower electric count flag of the last one L2P table memory block when electric count flag is electric at SSD under the update
It is updated what processing obtained；
L2P table writes with a brush dipped in Chinese ink module, for when the lower electric count flag is identical as lower electricity count flag is updated, from described non-
L2P table is write with a brush dipped in Chinese ink in volatile memory in volatile memory；
L2P table rebuilds module, for when the lower electric count flag and update lower electric count flag it is not identical when, from described
The L2P table is write with a brush dipped in Chinese ink in the volatile memory in nonvolatile memory, L2P is executed according to the L2P table and is rebuild
Processing obtains rebuilding L2P table.
The application also provides the lower electric treatment method of exception of SSD a kind of, comprising:
When SSD lower electricity extremely, the lower electric count flag of the last one L2P table memory block in volatile memory is carried out
Update processing obtains updating lower electric count flag；
The lower electric count flag of the last one L2P table memory block is updated under the update electric count flag；
All L2P table memory blocks are write with a brush dipped in Chinese ink in nonvolatile memory, when so that the SSD being powered on extremely, root
Judge whether L2P table is all write with a brush dipped in Chinese ink to described non-volatile according to the lower electric count flag of the L2P table memory block finally write with a brush dipped in Chinese ink
In memory.
The application also provides the lower electric treatment device of exception of SSD a kind of, comprising:
Lower electricity count flag update module, is used for when SSD lower electricity extremely, by the last one L2P in volatile memory
The lower electric count flag of table memory block is updated processing, obtains updating lower electric count flag；
Lower electricity count flag setup module, for updating the lower electric count flag of the last one L2P table memory block
For count flag electric under the update；
L2P table writes with a brush dipped in Chinese ink module, for writing with a brush dipped in Chinese ink all L2P table memory blocks in nonvolatile memory, so that institute
When stating SSD and powering on extremely, according to the lower electric count flag of the L2P table memory block finally write with a brush dipped in Chinese ink judge L2P table whether whole
It writes with a brush dipped in Chinese ink into the nonvolatile memory.
The application also provides a kind of device, comprising:
Memory, for storing computer program；
Processor, the step of method for reconstructing as described above is realized when for executing the computer program.
The application also provides a kind of computer readable storage medium, and calculating is stored on the computer readable storage medium
The step of machine program, the computer program realizes method for reconstructing as described above when being executed by processor.
The method for reconstructing of a kind of L2P table provided herein, comprising: when SSD is powered on extremely, from nonvolatile memory
Obtain the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink；Judge whether the lower electric count flag is counted with the lower electricity of update
Number mark is identical；Wherein, to the lower electricity of the last one L2P table memory block when electric count flag is electric at SSD under the update
Count flag is updated what processing obtained；It is deposited if so, writing with a brush dipped in Chinese ink L2P table to volatibility from the nonvolatile memory
In reservoir；If it is not, then write with a brush dipped in Chinese ink the L2P table into the volatile memory from the nonvolatile memory, according to
The L2P table executes L2P reconstruction processing, obtains rebuilding L2P table.
By when powering on extremely, the lower electric count flag for the L2P table memory block of acquisition finally write with a brush dipped in Chinese ink, due to acquisition
Lower electricity count flag is the lower electric count flag of the last one L2P table memory block, when L2P table memory block is electric at SSD according to
Under sequentially successively brushing into nonvolatile memory, judge that the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink is at this time
The no lower electric count flag to be updated when lower electricity, so that it may judge whether to save in nonvolatile memory at this time complete
L2P table, and then corresponding operation is carried out to the L2P table under different conditions, avoid the case where can not differentiating L2P table and caused by not
Necessary time loss improves SSD and powers on the efficiency restored extremely, enhances the stability of SSD.
The application also provides a kind of reconstructing device of L2P table, the lower electric treatment method of exception of SSD, abnormal lower electric treatment dress
It sets, device and computer readable storage medium, there is the above beneficial effect, this will not be repeated here.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of application for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow chart of the method for reconstructing of L2P table provided by the embodiment of the present application；
Fig. 2 is the flow chart of the reconstruction processing of method for reconstructing provided by the embodiment of the present application；
Fig. 3 is the flow chart of the lower electric treatment of method for reconstructing provided by the embodiment of the present application；
Fig. 4 is a kind of flow chart of the lower electric treatment method of exception of SSD provided by the embodiment of the present application；
Fig. 5 is a kind of structural schematic diagram of the reconstructing device of L2P table provided by the embodiment of the present application；
Fig. 6 is a kind of structural schematic diagram of the lower electric treatment device of exception of SSD provided by the embodiment of the present application.
Specific embodiment
The core of the application be to provide the method for reconstructing of L2P table a kind of, reconstructing device, SSD the lower electric treatment method of exception,
Abnormal lower electric treatment device, device and computer readable storage medium are judged non-volatile by the lower electric count flag of acquisition
Property memory in whether save complete L2P table, and then corresponding operation is carried out to the L2P table of different conditions, avoiding can not
The time differentiating the state of L2P table and being lost improves the resume speed that SSD is powered on extremely, enhances the stability of SSD.
To keep the purposes, technical schemes and advantages of the embodiment of the present application clearer, below in conjunction with the embodiment of the present application
In attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is
Some embodiments of the present application, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall in the protection scope of this application.
In the prior art, SSD is powered on after SSD power down, and SSD enter it is abnormal when powering on process, can be direct
Determine that mapping table namely L2P table in SSD are not available, just will start the reconstruction operation to L2P table at this time, obtains complete
It is saved in again after L2P table in volatile memory and uses the L2P table.But the reconstruction operation executed at this time be to entire SSD into
Reconstruction operation after row scanning, the spent time is directly proportional to SSD capacity, for example, the SSD hard disk of 2TB, recovery time may
Reach hour pole, therefore under the large buffer memory application environment of enterprise-level, carrying out reconstruction operation to SSD will greatly affect SSD
Service performance.
Restore L2P table in the prior art and need the plenty of time, is primarily due to carry out L2P table to overall data
Recovery operation, therefore when the capacity of SSD is bigger, when the data of storage are more, the time of recovery will necessarily increase to influence just
Normal SSD is used.It should be understood that be during SSD power down, SSD will do it multinomial behaviour using remaining electricity
Make, including L2P table is write with a brush dipped in Chinese ink in nonvolatile memory, in SSD power down, it is possible to L2P table be write with a brush dipped in Chinese ink operation
It being finished, the L2P table saved in nonvolatile memory at this time can be used directly, and in the prior art to this feelings
L2P table under condition still carries out the recovery operation of whole L2P tables, causes a large amount of time waste to influence SSD and uses.This
Situation it is technical, there is also complete situation is write with a brush dipped in Chinese ink by L2P table is non-, save part in nonvolatile memory at this time can
L2P table, as long as may determine that the situation, so that it may carry out recovery operation just for the L2P table that do not write with a brush dipped in Chinese ink, reduce L2P
The recovery time of table.
Therefore, the present embodiment provides a kind of method for reconstructing of L2P table, by the way that when powering on extremely, acquisition is finally write with a brush dipped in Chinese ink
L2P table memory block lower electric count flag, due to the lower electricity that the lower electric count flag of acquisition is the last one L2P table memory block
Count flag is successively write with a brush dipped in Chinese ink in nonvolatile memory in sequence when L2P table memory block is electric at SSD, is judged at this time
The lower electric the count flag whether lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink updates when being lower electricity, so that it may judge
Complete L2P table whether is saved in nonvolatile memory at this time, and then the L2P table under different conditions is grasped accordingly
Make, avoid the case where can not differentiating L2P table and caused by unnecessary time loss, improve SSD and power on extremely and restored
Efficiency enhances the stability of SSD.
Specifically, referring to FIG. 1, Fig. 1 is a kind of process of the method for reconstructing of L2P table provided by the embodiment of the present application
Figure.
Method provided herein is applied in the case where SSD is powered on extremely, that is, when SSD electrifying startup
Judgement enters the process flow that powers on extremely, therefore the process flow normally powered on as SSD is not in the column of the discussion of the present embodiment.
This method may include:
When S101, SSD are powered on extremely, the lower electricity meter for the L2P table memory block finally write with a brush dipped in Chinese ink is obtained from nonvolatile memory
Number mark；
The process that this step powers on extremely since SSD, SSD starts since volatile memory at this time, that is, SSD
Master control control Flash starts to read the data needed when SSD is powered on.It is powered in process normally, SSD is directly read when powering on beginning
Take L2P table.It but that is, it is determined that is protected in nonvolatile memory since extremely power in the present embodiment
The data deposited may be incomplete data, and the lower electricity for therefore, in this step obtaining the L2P table memory block finally write with a brush dipped in Chinese ink counts mark
Will, for judging whether save complete L2P table in nonvolatile memory.
Wherein, this step can find out the L2P table memory block finally write with a brush dipped in Chinese ink according to the timestamp of L2P table memory block,
L2P table memory block is write with a brush dipped in Chinese ink when exactly writing with a brush dipped in Chinese ink sequentially in time, therefore time newest L2P table is deposited on nonvolatile memory
Storing up block is exactly the L2P table memory block for finally writing with a brush dipped in Chinese ink nonvolatile memory.The modification of all L2P table memory blocks can also be obtained
Time, using the newest L2P table memory block of modification time as the L2P table memory block finally write with a brush dipped in Chinese ink.
It should be noted that the mode for saving L2P table in the present embodiment is that a certain amount of L2P is updated part and whole part
A part of L2P table is combined in proportion, forms a L2P table memory block, and multiple L2P tables is needed to store in practical applications
Block completes the storage to L2P table.Therefore, the basic unit that L2P table memory block namely operates L2P table, such as protecting
L2P table is saved when depositing L2P table namely as unit of L2P table memory block.Specifically, the general basis of size of L2P table memory block
Storage environment and storage medium are determined, for example, being the preservation L2P table in SLCBlock in the present embodiment, L2P table is stored
Block is set as 16KB.
Optionally, this step may include:
Step 1: searching the L2P table write with a brush dipped in Chinese ink to the end from nonvolatile memory by dichotomy when SSD is powered on extremely
Memory block；
Step 2: obtaining the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink.
The L2P table memory block mainly write with a brush dipped in Chinese ink to the end by binary search in this step.Wherein, dichotomy is that one kind is looked into
Algorithm is looked for, can be searched using dichotomy based on the above different search criterion, improve the speed of lookup.
S102 judges whether lower electric count flag is identical as lower electric count flag is updated；Wherein, lower electric count flag is updated
Processing is updated to the lower electric count flag of the last one L2P table memory block when being electric at SSD to obtain；If so, holding
Row S103；If it is not, then executing S104；
On the basis of step S101, this step be intended to judge lower electric count flag whether with update lower electric count flag phase
Together, that is, according to lower electric count flag judge complete L2P table whether has been write with a brush dipped in Chinese ink in nonvolatile memory.
Wherein, lower electricity meter corresponding to the setting of the last one L2P table memory block when lower electric count flag is electric under SSD is updated
Number mark.The lower electric count flag of only the last one L2P table memory block is to update lower electric count flag after namely lower electricity, because
This can be judged according to the lower electric count flag for obtaining the L2P table memory block that finally write with a brush dipped in Chinese ink the L2P table memory block whether be under
The last one L2P table memory block when electric, if so, just illustrating that the last one L2P table memory block has write with a brush dipped in Chinese ink non-volatile deposit
In reservoir namely nonvolatile memory saves complete L2P table.If not, just illustrate that L2P table saves failure when lower electricity,
Nonvolatile memory saves incomplete L2P table, specifically, L2P table is usually to carry out real-time update, if when lower electricity
L2P table saves failure, is so just saving the second new L2P table, that is, secondary new L2P in nonvolatile memory at this time
Table.
In more specific application environment, electric count flag can be to protecting in nonvolatile memory under the update of this step
The lower electric count flag for the lag deposited obtains after being updated processing, will directly update lower electric count flag when can also be instantly electric
It saves into nonvolatile memory, directly acquires to obtain when powering on extremely, can also be carried out according to other lower electric count flags
Derivation is calculated.Therefore, the mode that electric count flag under updating is obtained in this step is not unique, does not do specific limit herein
It is fixed.
S103 writes with a brush dipped in Chinese ink L2P table into volatile memory from nonvolatile memory；
On the basis of step S102, this step, which determined, saves complete L2P table in nonvolatile memory, because
This, this step writes with a brush dipped in Chinese ink L2P table in volatile memory, can be completed and powers on the reconstruction in process to L2P table extremely in SSD
Operation avoids and carries out reconstruction operation integrally to L2P table to waste the plenty of time, influences the normal use of SSD.
This step may include:
Step 1: determining the L2P table memory block finally write with a brush dipped in Chinese ink from nonvolatile memory；
Step 2: determining first L2P table memory block according to the sequence of addresses of L2P table memory block；
Step 3: the L2P table memory block that first L2P table memory block is write with a brush dipped in Chinese ink to the end, is successively read volatibility and deposits
In reservoir, so that L2P table is write with a brush dipped in Chinese ink in volatile memory.
This step is intended to determine the L2P table memory block of L2P table from the beginning to the end, that is, first L2P table memory block and most
The L2P table memory block write with a brush dipped in Chinese ink afterwards.The L2P table memory block write with a brush dipped in Chinese ink to the end after determination from first L2P table memory block successively to
In volatile memory, completion writes with a brush dipped in Chinese ink operation to L2P table.
S104 writes with a brush dipped in Chinese ink L2P table into volatile memory from nonvolatile memory, executes L2P weight according to L2P table
Processing is built, obtains rebuilding L2P table.
On the basis of step S102, this step determined saved in nonvolatile memory be part L2P table,
It is exactly L2P table at this time in nonvolatile memory is not complete L2P table, particularly secondary new L2P table.Therefore, originally
It needs to carry out L2P table reconstruction operation according to the L2P table in step, obtains rebuilding L2P table.
It is deposited it should be noted that the L2P table saved in nonvolatile memory is write with a brush dipped in Chinese ink volatibility first in this step
In reservoir, L2P table reconstruction operation is being carried out according to the L2P table, that is, carry out weight on the basis of current existing L2P table
It builds, avoids and all L2P tables are rebuild, time waste is caused to influence the normal use of SSD.
To sum up, the present embodiment is by the way that when powering on extremely, the lower electricity for the L2P table memory block of acquisition finally write with a brush dipped in Chinese ink counts mark
Will, due to the lower electric count flag that the lower electric count flag of acquisition is the last one L2P table memory block, when L2P table memory block exists
It successively writes with a brush dipped in Chinese ink in nonvolatile memory, judges under the L2P table memory block finally write with a brush dipped in Chinese ink at this time in sequence when electric under SSD
The lower electric count flag whether electric count flag updates when being lower electricity, so that it may judge whether protect in nonvolatile memory at this time
Complete L2P table has been deposited, and then corresponding operation is carried out to the L2P table under different conditions, has avoided the case where can not differentiating L2P table
Unnecessary time loss caused by and improves SSD and powers on the efficiency restored extremely, enhances the stability of SSD.
On the basis of a upper embodiment, how the present embodiment in a upper embodiment primarily directed to carrying out at L2P reconstruction
One done to be managed to illustrate, other parts are substantially the same with a upper embodiment, and same section can refer to a upper embodiment,
This is not repeated them here.
Referring to FIG. 2, Fig. 2 is the flow chart of the reconstruction processing of method for reconstructing provided by the embodiment of the present application.
The processing may include:
S201 is scanned according to all data of the L2P table to SSD, obtains mapping data to be repaired；
This step is intended to be scanned the data for finding and not mapped by L2P table record according to L2P table, that is, to be repaired
Map data.L2P table is the mapping relations about physical address and logical address in data storage, therefore is lacked when in L2P table
When part mapping relationship, it is only necessary to according to recorded address, so that it may find out the data for not recording mapping relations.
S202 executes mapping to mapping data to be repaired and repairs operation, obtains rebuilding L2P table；
On the basis of step S201, this step, which is intended to execute mapping to mapping data to be repaired, repairs operation, obtains weight
Build L2P table.This step is namely directed to the reparation operation that mapping data to be repaired carry out L2P table, rather than to whole data
Reparation operation is carried out, the reparation duration of L2P table is reduced, avoids and L2P table is repaired and wastes the plenty of time.
Wherein, the mapping reparation operation according to performed by mapping data to be repaired can be provided any using the prior art
A kind of mapping reparation operation, this will not be repeated here.
S203 will rebuild L2P table and write with a brush dipped in Chinese ink in volatile memory.
On the basis of step S202, this step is intended to obtain previous step to rebuild L2P table and writes with a brush dipped in Chinese ink volatile storage
In device, so that complete L2P table can be used in SSD.
All of above embodiment is intended to describe the process after SSD is powered on extremely, is based on all of above embodiment, the present embodiment
Process flow under main description SSD after electricity.
Referring to FIG. 3, Fig. 3 is the flow chart of the lower electric treatment of method for reconstructing provided by the embodiment of the present application.
The lower electric treatment includes:
S301 is updated processing to the lower electric count flag of the last one L2P table memory block, obtains updating lower electricity counting
Mark；
This step is intended to the lower electric count flag of the last one L2P table memory block being updated processing, obtains under update
Electric count flag.Can be and lower electric count flag is carried out plus a processing, for example, this electric count flag is 78 at present, then right
The lower electric count flag obtains 79 after being updated processing, by 79 as count flag electric under updating.
It should be noted that each time under SSD when electricity, all to the lower electric count flag of the last one L2P table memory block into
Row update processing obtains updating lower electric count flag.
S302 is updated to the lower electric count flag of the last one L2P table memory block to update lower electric count flag；
On the basis of step S301, this step is intended to update the lower electric count flag of the last one L2P table memory block
For count flag electric under the update.The lower electricity of the last one L2P table memory block is arranged in electric count flag under namely updating
In count flag.
S303 writes with a brush dipped in Chinese ink all L2P table memory blocks in nonvolatile memory.
On the basis of step S302, what this step was intended to execute L2P table memory block writes with a brush dipped in Chinese ink operation.To namely own
L2P table memory block is write with a brush dipped in Chinese ink in nonvolatile memory according to preset order.
Wherein, in specific application environment, L2P table should be real-time update into nonvolatile memory, the application
In reconstruction operation mainly also is carried out to the L2P table that does not update, therefore, all L2P tables, which refer to, does not update non-volatile memories
L2P table in device.
After step S303, further includes:
Lower electric count flag will be updated to write with a brush dipped in Chinese ink in nonvolatile memory.
This optinal plan mainly all writes with a brush dipped in Chinese ink nonvolatile memory in all L2P table memory blocks and then will more
New lower electric count flag is write with a brush dipped in Chinese ink in nonvolatile memory, can directly get from nonvolatile memory when in order to power on
The condition of judgement, is directly judged.
It certainly, can also be in such a way that other obtain and update lower electric count flag, herein not in all of above embodiment
It repeats.
Based on all of above embodiment, the embodiment of the present application also provides the lower electric treatment method of exception of SSD a kind of, by
The lower electric count flag of the last one L2P table memory block is updated under SSD in electric process, so as to can count according to the lower electricity when powering on
Number mark is judged.
Referring to FIG. 4, Fig. 4 is a kind of flow chart of the lower electric treatment method of exception of SSD provided by the embodiment of the present application.
This method may include:
The lower electricity of the last one L2P table memory block in volatile memory is counted mark when SSD lower electricity extremely by S401
Will is updated processing, obtains updating lower electric count flag；
S402 is updated to the lower electric count flag of the last one L2P table memory block to update lower electric count flag；
S403 writes with a brush dipped in Chinese ink all L2P table memory blocks in nonvolatile memory, when so that SSD being powered on extremely, according to most
The lower electric count flag for the L2P table memory block write with a brush dipped in Chinese ink afterwards judges whether L2P table is all write with a brush dipped in Chinese ink into nonvolatile memory.
Illustrating in the present embodiment can refer to illustrating for a upper embodiment, and this will not be repeated here.
It, can be by most when execution S401 to S403 powers on so as to SSD after the present embodiment mainly works as the extremely lower electricity of SSD
The lower electric count flag for the L2P table memory block write with a brush dipped in Chinese ink afterwards judges whether L2P table is write with a brush dipped in Chinese ink in nonvolatile memory completely.
The embodiment of the present application provides the lower electric treatment method of exception of SSD a kind of, by the last one L2P table memory block
Lower electric count flag be updated, and then the lower electricity that can pass through the L2P table memory block finally write with a brush dipped in Chinese ink after the power-up counts
Mark is judged, so that it is determined that whether nonvolatile memory saves complete L2P table at this time.
On the basis of all of above embodiment, the present embodiment provides a kind of more specifical L2P table power on and lower electricity
Process.
Lower electric process: SSD perceives lower electricity, and lower electric counter is added 1, remaining related procedure is executed, writes with a brush dipped in Chinese ink L2P table
(SLC flash stores particle to write buffer (write buffer) to SLC Block, and preceding 64 byte is denoted as buffer header
(header data of write buffer) includes lower electric count flag, electric counter+1 under value), remaining related procedure is executed, under execution
The lower electric counter and power-down state that have added 1 finally, is write with a brush dipped in Chinese ink the specific position in FLASH by electric current journey.Wherein, lower electricity meter
It is exactly to update lower electric count flag representated by number device+1, if lower electric count flag when powering in the header data of L2P table
It is identical as lower electric count flag is updated, it is all written in Flash then just representing L2P.
From the foregoing, it will be observed that lower electricity counter adds 1 (electric count flag under updating) in lower electric process at the beginning, in lower electric current journey
Finally by lower electric counter, power-down state etc. writes with a brush dipped in Chinese ink the specific position in Flash.If entirely lower electric current journey executes completion, under
Electricity condition is labeled as normal lower electricity；Otherwise labeled as abnormal lower electricity, so the SSD such as electrification driver chuck fall extremely even if having a power failure
Electric situation, as long as storage capacitor can guarantee entirely electric current journey to be descended to cover, power-down state is labeled as normally lower electricity.
Power up: system first can read power-down state from the specific position in Flash, the lower electricity information such as counter, if
Power-down state is normal lower electricity, then this, which is powered on, normally powers on recovery for execution, and otherwise, execute powered-off fault powers on recovery.
The recovery that powers on for powered-off fault, that is, abnormal power up are scanned and are read and finally write with a brush dipped in Chinese ink in Flash
The SLC page (SLC Flash storage cell) of L2P obtains the lower electric count flag in header.If it is lower electricity count flag with
It is identical to update lower electric count flag (lower electricity counter+1), then can read newest portion L2P table from SLC Block
Specific position in DDR.If lower electricity count flag is identical as lower electric counter (the lower electric count flag not updated), illustrate
When secondary lower electricity, the L2P table in DDR, which updates partially to fail, to be write with a brush dipped in Chinese ink in Slc block, needs to rebuild L2P table at this time.
A kind of reconstructing device of L2P table provided by the embodiments of the present application is introduced below, a kind of L2P described below
The reconstructing device of table can correspond to each other reference with a kind of above-described method for reconstructing of L2P table.
Referring to FIG. 5, Fig. 5 is a kind of structural schematic diagram of the reconstructing device of L2P table provided by the embodiment of the present application.
The apparatus may include:
Lower electricity count flag obtains module 110, when powering on extremely for SSD, obtains last brush from nonvolatile memory
The lower electric count flag for the L2P table memory block write；
Lower electricity count flag judgment module 120, for judge lower electric count flag whether with update lower electric count flag phase
Together；Wherein, it updates and the lower electric count flag of the last one L2P table memory block is carried out when lower electric count flag is electric at SSD
What update was handled；
L2P table writes with a brush dipped in Chinese ink module 130, when identical as lower electricity count flag is updated for electric count flag instantly, from non-volatile
L2P table is write with a brush dipped in Chinese ink in volatile memory in property memory；
L2P table rebuilds module 140, for electric count flag instantly and update lower electric count flag it is not identical when, from it is non-easily
L2P table is write with a brush dipped in Chinese ink in volatile memory in the property lost memory, L2P reconstruction processing is executed according to L2P table, obtains rebuilding L2P
Table.
The embodiment of the present application also provides the lower electric treatment device of exception of SSD a kind of.
Referring to FIG. 6, Fig. 6 shows for a kind of structure of the lower electric treatment device of exception of SSD provided by the embodiment of the present application
It is intended to.
The apparatus may include:
Lower electricity count flag update module 210, is used for when SSD lower electricity extremely, by the last one in volatile memory
The lower electric count flag of L2P table memory block is updated processing, obtains updating lower electric count flag；
Lower electricity count flag setup module 220, for the lower electric count flag of the last one L2P table memory block to be updated to
Update lower electric count flag；
L2P table writes with a brush dipped in Chinese ink module 230, for writing with a brush dipped in Chinese ink all L2P table memory blocks in nonvolatile memory, so that SSD
When exception powers on, judge whether L2P table is all write with a brush dipped in Chinese ink to non-easy according to the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink
In the property lost memory, avoids carrying out overall reconstruction operation as long as powering on extremely and wasting a large amount of time, it is abnormal to improve SSD
The resume speed powered on reduces and consumes the unnecessary time.
The embodiment of the present application also provides a kind of device, comprising:
Memory, for storing computer program；
Processor, when for executing computer program the step of the realization such as method for reconstructing of above embodiments.
The embodiment of the present application also provides a kind of computer readable storage medium, and meter is stored on computer readable storage medium
Calculation machine program, when computer program is executed by processor the step of the realization such as method for reconstructing of above embodiments.
The computer readable storage medium may include: USB flash disk, mobile hard disk, read-only memory (Read-OnlyMemory,
ROM), random access memory (Random Access Memory, RAM), magnetic or disk etc. are various can store program
The medium of code.
The embodiment of the present application also provides a kind of method for reconstructing of more specifical L2P table, specific as follows:
By L2P table, all storage is arrived in a certain number of SLC Block (SLC flash stores particle), and using double standby
Part is stored.According to the LBA of the other layout JM_L2P_CNT quantity of the size of L2P table, it is recorded as JM_LBA.Every 16KB's
L2P write buffer (write buffer) sequence occupies a JM_LBA, after writing with a brush dipped in Chinese ink in SLC, corresponding two PCA.When SSD writes
When dishful, a new L2P table is just constituted, First table is denoted as.The table is index with JM_LBA, and PCA is content, one
Corresponding two PCA of a JM_LBA.The space 64byte is opened up in the preceding 4KB of the L2P write buffer of 16KB, is denoted as BUFFER
HEADER (caching head), records current JM_LBA, lower electricity count flag power_down_flag (lower electricity count flag),
Serial number jm_seq_number, SLC Block Type is written in data.Meanwhile electric counter power_down_ under setting one
Cnt in normal lower electricity finally, power_down_cnt adds 1, and is written in FLASH together with system configuration data；It is abnormal
When power down, the value after power_down_cnt adds 1 cannot successfully be write with a brush dipped in Chinese ink in FLASH.In SSD power down, by L2P
Power_down_flag in write buffer takes power_down_cnt+1.So in SSD depth recovery, it is only necessary to
The power_down_flag in the 16KB Page finally write with a brush dipped in Chinese ink is found, and is compared with power_down_cnt, if
Power_down_flag is equal with power_down_cnt+1, and when illustrating last time powered-off fault, L2P table is all successfully write with a brush dipped in Chinese ink
In SLC, JM_L2P_CNT-1 SLC directly can be found forward from current newest SLC page (SLC Flash storage cell)
Then page sequential reads out the specified region of SLC page to DDR, can recover the L2P table of user data.If power_
Down_flag is equal with power_down_cnt, when illustrating that last time is extremely lower electric, fails to write with a brush dipped in Chinese ink user data L2P telogenesis function
Into SLC, it can still restore a new user data L2P table according to successful mode at this time.Then the last one is read
The slc page for the L2P type write with a brush dipped in Chinese ink updates part according to the L2P recorded inside preceding 4KB, finds the L2P of the last one update
Sequence number (timestamp), overall superpage (storage cell) is then scanned according to PBA, only will be greater than
The super page of sequence number is found out, and ascending sort, then since first super page, successively
The LBA in the Flash acquisition area control meta is read, and is index with LBA, corresponding PBA is updated into L2P table, to
All super page are run through, and newest L2P table just constructs completion.
Each embodiment is described in a progressive manner in specification, the highlights of each of the examples are with other realities
The difference of example is applied, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
Speech, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part illustration
?.
Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure
And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Profession
Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered
Think beyond scope of the present application.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor
The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
Above to the lower electric treatment side of exception of a kind of method for reconstructing of L2P table provided herein, reconstructing device, SSD
Method, abnormal lower electric treatment device, device and computer readable storage medium are described in detail.It is used herein specifically
The principle and implementation of this application are described for a example, the application that the above embodiments are only used to help understand
Method and its core concept.It should be pointed out that for those skilled in the art, not departing from the application original
Under the premise of reason, can also to the application, some improvement and modification can also be carried out, these improvement and modification also fall into the application right and want
In the protection scope asked.
Claims (11)
1. a kind of method for reconstructing of L2P table characterized by comprising
When SSD is powered on extremely, the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink is obtained from nonvolatile memory；
Judge whether the lower electric count flag is identical as lower electric count flag is updated；Wherein, electric count flag under the update
Processing is updated to the lower electric count flag of the last one L2P table memory block when being electric at SSD to obtain；
If so, L2P table is write with a brush dipped in Chinese ink into volatile memory from the nonvolatile memory；
If it is not, then the L2P table is write with a brush dipped in Chinese ink into the volatile memory from the nonvolatile memory, according to described
L2P table executes L2P reconstruction processing, obtains rebuilding L2P table.
2. method for reconstructing according to claim 1, which is characterized in that when SSD is powered on extremely, obtained from nonvolatile memory
Take the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink, comprising:
When SSD is powered on extremely, the L2P table memory block write with a brush dipped in Chinese ink to the end is searched from nonvolatile memory by dichotomy；
Obtain the lower electric count flag for the L2P table memory block finally write with a brush dipped in Chinese ink.
3. method for reconstructing according to claim 1, which is characterized in that execute L2P reconstruction processing according to the L2P table, obtain
To reconstruction L2P table, comprising:
It is scanned according to all data of the L2P table to the SSD, obtains mapping data to be repaired；
Mapping is executed to the mapping data to be repaired and repairs operation, obtains rebuilding L2P table；
The reconstruction L2P table is write with a brush dipped in Chinese ink in the volatile memory.
4. method for reconstructing according to claim 1, which is characterized in that when electric under the SSD, comprising:
Processing is updated to the lower electric count flag of the last one L2P table memory block, obtains updating lower electric count flag；
The lower electric count flag of the last one L2P table memory block is updated under the update electric count flag；
All L2P table memory blocks are write with a brush dipped in Chinese ink in nonvolatile memory.
5. method for reconstructing according to claim 4, which is characterized in that write with a brush dipped in Chinese ink all L2P table memory blocks non-easy
After the property lost memory, further includes:
Count flag electric under the update is write with a brush dipped in Chinese ink in the nonvolatile memory.
6. method for reconstructing according to claim 1, which is characterized in that by L2P table brush from the nonvolatile memory
It writes in volatile memory, comprising:
The L2P table memory block finally write with a brush dipped in Chinese ink is determined from the nonvolatile memory；
First L2P table memory block is determined according to the sequence of addresses of the L2P table memory block；
The L2P table memory block that first L2P table memory block is write with a brush dipped in Chinese ink to the end, is successively read the volatile memory
In, so that L2P table is write with a brush dipped in Chinese ink in the volatile memory.
7. a kind of reconstructing device of L2P table characterized by comprising
Lower electricity count flag obtains module, and when powering on extremely for SSD, the L2P finally write with a brush dipped in Chinese ink is obtained from nonvolatile memory
The lower electric count flag of table memory block；
Lower electricity count flag judgment module, for judging whether the lower electric count flag is identical as lower electric count flag is updated；
Wherein, the lower electric count flag of the last one L2P table memory block is carried out when electric count flag is electric at SSD under the update
What update was handled；
L2P table writes with a brush dipped in Chinese ink module, for when the lower electric count flag is identical as lower electricity count flag is updated, from described non-volatile
L2P table is write with a brush dipped in Chinese ink in volatile memory in property memory；
L2P table rebuilds module, for when the lower electric count flag and update lower electric count flag it is not identical when, from it is described it is non-easily
The L2P table is write with a brush dipped in Chinese ink in the volatile memory in the property lost memory, L2P reconstruction processing is executed according to the L2P table,
It obtains rebuilding L2P table.
8. the lower electric treatment method of exception of SSD a kind of characterized by comprising
When SSD lower electricity extremely, the lower electric count flag of the last one L2P table memory block in volatile memory is updated
Processing obtains updating lower electric count flag；
The lower electric count flag of the last one L2P table memory block is updated under the update electric count flag；
All L2P table memory blocks are write with a brush dipped in Chinese ink in nonvolatile memory, when so that the SSD being powered on extremely, according to institute
The lower electric count flag for stating the L2P table memory block finally write with a brush dipped in Chinese ink judges whether L2P table is all write with a brush dipped in Chinese ink to the non-volatile memories
In device.
9. the lower electric treatment device of exception of SSD a kind of characterized by comprising
Lower electricity count flag update module, for when SSD lower electricity extremely, the last one L2P table in volatile memory to be deposited
The lower electric count flag of storage block is updated processing, obtains updating lower electric count flag；
Lower electricity count flag setup module, for the lower electric count flag of the last one L2P table memory block to be updated to institute
State the lower electric count flag of update；
L2P table writes with a brush dipped in Chinese ink module, for writing with a brush dipped in Chinese ink all L2P table memory blocks in nonvolatile memory, so that the SSD
Exception is when powering on, according to the lower electric count flag of the L2P table memory block finally write with a brush dipped in Chinese ink judge L2P table whether all write with a brush dipped in Chinese ink to
In the nonvolatile memory.
10. a kind of device characterized by comprising
Memory, for storing computer program；
Processor realizes the step such as method for reconstructing as claimed in any one of claims 1 to 6 when for executing the computer program
Suddenly.
11. a kind of computer readable storage medium, which is characterized in that be stored with computer on the computer readable storage medium
Program realizes the step such as method for reconstructing as claimed in any one of claims 1 to 6 when the computer program is executed by processor
Suddenly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811108586.8A CN109213690A (en) | 2018-09-21 | 2018-09-21 | L2P table reconstruction method and related device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811108586.8A CN109213690A (en) | 2018-09-21 | 2018-09-21 | L2P table reconstruction method and related device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109213690A true CN109213690A (en) | 2019-01-15 |
Family
ID=64985404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811108586.8A Pending CN109213690A (en) | 2018-09-21 | 2018-09-21 | L2P table reconstruction method and related device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109213690A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110597741A (en) * | 2019-08-23 | 2019-12-20 | 苏州浪潮智能科技有限公司 | Reading-writing and updating method of L2P table and L2P table |
| CN110688242A (en) * | 2019-09-10 | 2020-01-14 | 苏州浪潮智能科技有限公司 | Method for recovering block information after abnormal power failure of SSD and related components |
| CN111338846A (en) * | 2020-02-16 | 2020-06-26 | 苏州浪潮智能科技有限公司 | Method and device for recovering L2P table based on multiple cores |
| CN111737160A (en) * | 2019-03-25 | 2020-10-02 | 西部数据技术公司 | Optimization of multiple copies in storage management |
| CN113393891A (en) * | 2020-03-11 | 2021-09-14 | 北京新能源汽车股份有限公司 | Nonvolatile memory detection method and device and electric vehicle |
| CN113900589A (en) * | 2021-09-16 | 2022-01-07 | 合肥致存微电子有限责任公司 | Data writing method and device |
| WO2022121471A1 (en) * | 2020-12-11 | 2022-06-16 | 苏州浪潮智能科技有限公司 | Method for storing l2p table, system, device, and medium |
| CN116467224A (en) * | 2022-01-12 | 2023-07-21 | 联芸科技(杭州)股份有限公司 | L2P mapping table reconstruction method and solid state disk |
| WO2024148875A1 (en) * | 2023-01-10 | 2024-07-18 | 苏州元脑智能科技有限公司 | Solid-state disk block correction method and apparatus, and electronic device and storage medium |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101751343A (en) * | 2009-12-28 | 2010-06-23 | 成都市华为赛门铁克科技有限公司 | Method for writing data in solid-state hard-disk and device thereof |
| US20110296123A1 (en) * | 2010-05-25 | 2011-12-01 | Jason Adler | Memory access table saving and restoring system and methods |
| CN102789431A (en) * | 2012-06-29 | 2012-11-21 | 记忆科技(深圳)有限公司 | Data protection method and system |
| CN105243025A (en) * | 2015-09-25 | 2016-01-13 | 联想(北京)有限公司 | Mapping table forming and loading methods and electronic device |
| CN106502928A (en) * | 2016-09-29 | 2017-03-15 | 华为技术有限公司 | A kind of storage system power-off protection method, storage control and electronic equipment |
| US20180143886A1 (en) * | 2016-11-23 | 2018-05-24 | Quanta Storage Inc. | Method for Rebuilding a Mapping Table of a Solid State Disk |
| CN108170614A (en) * | 2018-01-19 | 2018-06-15 | 湖南国科微电子股份有限公司 | A kind of method, apparatus that Data duplication is avoided to recycle and solid state disk |
-
2018
- 2018-09-21 CN CN201811108586.8A patent/CN109213690A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101751343A (en) * | 2009-12-28 | 2010-06-23 | 成都市华为赛门铁克科技有限公司 | Method for writing data in solid-state hard-disk and device thereof |
| US20110296123A1 (en) * | 2010-05-25 | 2011-12-01 | Jason Adler | Memory access table saving and restoring system and methods |
| CN102789431A (en) * | 2012-06-29 | 2012-11-21 | 记忆科技(深圳)有限公司 | Data protection method and system |
| CN105243025A (en) * | 2015-09-25 | 2016-01-13 | 联想(北京)有限公司 | Mapping table forming and loading methods and electronic device |
| CN106502928A (en) * | 2016-09-29 | 2017-03-15 | 华为技术有限公司 | A kind of storage system power-off protection method, storage control and electronic equipment |
| US20180143886A1 (en) * | 2016-11-23 | 2018-05-24 | Quanta Storage Inc. | Method for Rebuilding a Mapping Table of a Solid State Disk |
| CN108170614A (en) * | 2018-01-19 | 2018-06-15 | 湖南国科微电子股份有限公司 | A kind of method, apparatus that Data duplication is avoided to recycle and solid state disk |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111737160A (en) * | 2019-03-25 | 2020-10-02 | 西部数据技术公司 | Optimization of multiple copies in storage management |
| CN110597741A (en) * | 2019-08-23 | 2019-12-20 | 苏州浪潮智能科技有限公司 | Reading-writing and updating method of L2P table and L2P table |
| CN110688242A (en) * | 2019-09-10 | 2020-01-14 | 苏州浪潮智能科技有限公司 | Method for recovering block information after abnormal power failure of SSD and related components |
| CN111338846A (en) * | 2020-02-16 | 2020-06-26 | 苏州浪潮智能科技有限公司 | Method and device for recovering L2P table based on multiple cores |
| CN111338846B (en) * | 2020-02-16 | 2023-01-10 | 苏州浪潮智能科技有限公司 | Method and device for recovering L2P (L2P) table based on multiple cores |
| CN113393891A (en) * | 2020-03-11 | 2021-09-14 | 北京新能源汽车股份有限公司 | Nonvolatile memory detection method and device and electric vehicle |
| WO2022121471A1 (en) * | 2020-12-11 | 2022-06-16 | 苏州浪潮智能科技有限公司 | Method for storing l2p table, system, device, and medium |
| US12061557B2 (en) | 2020-12-11 | 2024-08-13 | Inspur Suzhou Intelligent Technology Co., Ltd. | Method for storing L2P table, system, device, and medium |
| CN113900589A (en) * | 2021-09-16 | 2022-01-07 | 合肥致存微电子有限责任公司 | Data writing method and device |
| CN116467224A (en) * | 2022-01-12 | 2023-07-21 | 联芸科技(杭州)股份有限公司 | L2P mapping table reconstruction method and solid state disk |
| CN116467224B (en) * | 2022-01-12 | 2023-10-31 | 联芸科技(杭州)股份有限公司 | L2P mapping table reconstruction method and solid state disk |
| WO2024148875A1 (en) * | 2023-01-10 | 2024-07-18 | 苏州元脑智能科技有限公司 | Solid-state disk block correction method and apparatus, and electronic device and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109213690A (en) | L2P table reconstruction method and related device | |
| KR101257989B1 (en) | Restore index page | |
| KR101077904B1 (en) | Apparatus and method for managing flash memory using page level mapping algorithm | |
| US7925925B2 (en) | Delta checkpoints for a non-volatile memory indirection table | |
| US9575844B2 (en) | Mass storage device and method of operating the same to back up data stored in volatile memory | |
| CN103577574B (en) | High-reliability linear file system based on nand flash | |
| CN105122220A (en) | Atomic write command support in a solid state drive | |
| US20120203958A1 (en) | Storage control system with change logging mechanism and method of operation thereof | |
| CN109508148B (en) | Metadata reconstruction method and device and computer readable storage medium | |
| CN102160030A (en) | Aggregation of write traffic to a data store | |
| CN102298555A (en) | Modular flash management system based on Not AND (NAND) technology | |
| CN101546294A (en) | Method for storing data in Flash memory | |
| CN104516959A (en) | Method and device for managing database logs | |
| US20170010810A1 (en) | Method and Apparatus for Providing Wear Leveling to Non-Volatile Memory with Limited Program Cycles Using Flash Translation Layer | |
| CN109918318A (en) | SSD metadata management method, device, equipment and readable storage medium storing program for executing | |
| CN115705152A (en) | Metadata management in non-volatile memory devices using in-memory logs | |
| CN103176920A (en) | Nor flash power down protection method and Nor flash power down protection device | |
| CN115705153A (en) | Conditional update and deferred lookup | |
| CN113590504B (en) | Solid state disk for storing log frames and log entries | |
| EP2264602A1 (en) | Memory device for managing the recovery of a non volatile memory | |
| KR101077901B1 (en) | Apparatus and method for managing flash memory using log block level mapping algorithm | |
| CN110083310A (en) | Company-data store method, device and storage cluster system in a kind of storage cluster | |
| WO2010145967A1 (en) | Memory device for managing the recovery of a non volatile memory | |
| KR101020781B1 (en) | A method for log management in flash memory-based database systems | |
| JP2014225196A (en) | Semiconductor storage device and control method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190115 |