CN109192645B - Ion beam control method - Google Patents
Ion beam control method Download PDFInfo
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- CN109192645B CN109192645B CN201811083155.0A CN201811083155A CN109192645B CN 109192645 B CN109192645 B CN 109192645B CN 201811083155 A CN201811083155 A CN 201811083155A CN 109192645 B CN109192645 B CN 109192645B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/15—External mechanical adjustment of electron or ion optical components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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Abstract
The invention relates to the technical field of ion implantation, and discloses a control method of an ion beam. According to the invention, the parameters of the machine station do not need to be reset, the ion beam throughput is controlled by controlling the rotation of the beam blocker, the change of different procedures can be flexibly adapted, the productivity is improved, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of ion implantation, in particular to a control method of an ion beam.
Background
Ion implantation is a new generation of material surface treatment technology and has wide application in semiconductor manufacturing technology. Specifically, in a semiconductor manufacturing process, dopants are implanted in an ion form into a particular region of a semiconductor device using ion implantation equipment (i.e., ion implanters) and using ion implantation techniques to obtain precise electronic characteristics. During ion implantation, ions must first be accelerated to a sufficient energy and velocity to penetrate the (implanted) film and reach a desired implantation depth. The ion implantation process can precisely control the dopant concentration in the implantation region, wherein the dopant concentration (dose) is controlled by the ion beam current (total number of ions in the ion beam) and the scan rate (the number of times the wafer passes through the ion beam), and the depth of ion implantation is determined by the energy of the ion beam.
In ion implantation, a beam stop is usually provided to control the on/off of the ion beam in each process. Generally, an ion implantation apparatus includes an ion neutralization reactor for neutralizing positive charges carried by an ion beam during ion implantation. Specifically, the ion neutralization reactor comprises a secondary electron emission device and an electron blocking device, wherein the electron blocking device is positioned outside the secondary electron emission device and comprises a first part and a second part, the first part is provided with an opening, and the opening corresponds to the electron emission position of the secondary electron emission device; the ion beam passes between the first and second portions of the electron blocking device and reaches the wafer undergoing ion implantation.
In the ion implantation process, a plurality of processes are required, but the included angle between the opening of the existing beam stopper and the incidence direction of the ion beam is changed between 0 degrees and 90 degrees, so that the on-off of the ion beam can be controlled only, and the throughput of the ion beam cannot be controlled. When the processes in the ion implantation process are changed, the parameters of the machine are required to be reset when the processes are changed, and the ion implantation productivity is low.
Disclosure of Invention
The present invention is made in view of the above problems, and it is an object of the present invention to provide a method for controlling an ion beam, which can flexibly adapt to variations of different processes by controlling the rotation of a beam stop to control the throughput of the ion beam.
The invention provides a method for controlling an ion beam, which comprises the following steps:
step S1: the ion beam emitted from the ion source reaches an accelerator, and the accelerator accelerates the passing ion beam;
step S2: the accelerated ion beam is guided to a beam blocker, and a controller controls a channel of the beam blocker to be in a closed state or an open state relative to the ion beam;
step S3: the current measuring device measures the current of the ion beam passing through the beam blocker, converts the measured current into a current signal and sends the current signal to the controller;
step S4: the controller receives the current signal, compares the current signal with a preset current parameter and sends a control instruction to the light beam blocker;
step S5: the beam blocker rotates according to the received control command to change the ion beam throughput of the beam blocker.
Compared with the prior art, according to the control method of the ion beam provided by the invention, the current measuring device can detect the current of the ion beam which passes through the beam stopper after being accelerated and is about to reach a subsequent process chamber in real time, the detected current is converted into a current signal and is fed back to the controller, and the controller compares the current signal with the preset current parameters in different procedures. When the current signal is different from the current parameter, the controller controls the rotation of the beam blocker to change the ion beam throughput of the beam blocker; and when the current signal is the same as the preset current parameter, the controller controls the light beam blocker to stop rotating. At this time, in different processes of the ion implantation process, the ion beam throughput is controlled by adjusting the rotation of the beam stopper, and the on-off and throughput of the ion beam are flexibly controlled. According to the control method of the ion beam, the parameters of the machine table do not need to be reset, the change of different procedures can be flexibly adapted, the capacity is improved, and the cost is reduced.
In addition, preferably, in step S5, the controller controls the beam blocker to linearly vary the throughput of the ion beam.
The throughput of the ion beam of the beam stopper is linearly changed, and the controller can calculate the time required by the beam stopper to rotate according to the preset current parameter change of different procedures. Therefore, the controller can accurately control the throughput of the ion beam passing through the beam stopper, thereby flexibly adapting to the change of different procedures and improving the ion implantation capacity.
Further, preferably, the passage of the beam stopper is rectangular, and in step S5, the controller controls the rotation of the beam stopper to follow the following law:
sin(ωt)＝vt，
where ω denotes a rotational angular velocity of the beam stop, v denotes a change velocity of a size of an orthogonal projection of the beam stop on an incident vertical plane of the ion beam, and t denotes time.
The controller can change the change rule of the ion beam throughput of the beam stopper by adjusting the rotation angle of the beam stopper, and is convenient for the controller to control the ion beam throughput, thereby flexibly adapting to the change of different procedures and improving the ion implantation capacity.
Preferably, in step S5, the controller controls an angle formed by a path of the beam stopper and an incident direction of the ion beam to be 0 to arctan (d/h), where d denotes an inner diameter of the path of the beam stopper in a rotational direction thereof, and h denotes a path depth of the beam stopper.
When the angle formed by the channel of the beam blocker and the incidence direction of the ion beam is arctan (d/h) or above, the beam blocker is in a closed state relative to the ion beam, and the rotation of the beam blocker between arctan (d/h) and 90 degrees is an invalid angle, namely the beam blocker is in a closed and non-conductive state relative to the ion beam in the angle range. The controller controls the light beam blocker to rotate between 0-arctan (d/h), the control range required by the controller is small, and the controller is favorable for accurate control, so that the control accuracy of the controller is improved.
Further, it is preferable that the method further includes step S6: after each ion implantation process is finished, the controller controls the passage of the beam blocker to be in a closed state relative to the ion beam.
After each ion implantation process is finished, the light beam blocker is subjected to homing treatment, and the controller controls the channel of the light beam blocker to be in a closed state relative to the ion beams, so that the controller can conveniently control a new round of ion implantation process.
Further, it is preferable that the method further includes step S51: and screening the energy of the passing ion beam by using an energy magnetic field arranged between the beam stopper and the current measuring device.
Through setting up the energy magnetic field, carry out energy screening to the ion beam that passes through, improve the linearity and the energy degree of consistency of the ion beam that reach the technology cavity, improve the productivity of ion implantation.
Preferably, step S4 includes the following substeps:
step S41: the controller analyzes the received current signal, and controls the rotation of the light beam blocker if the current signal lasts for a set time within a specific numerical range.
The controller analyzes the current signal, and only when the current signal exceeds or is lower than the preset current for a certain time, the controller controls the rotation of the light beam stopper, so that the control of the controller is more accurate and efficient, and the improvement of the ion implantation capacity is facilitated.
In addition, in step S2, the rotation of the beam stopper is preferably driven by a motor, which is in communication with the controller.
The motor is used for driving the light beam stopper to rotate, the motor is driven flexibly and accurately and runs reliably, the blocking efficiency of the light beam stopper is improved, and the improvement of the productivity and efficiency of ion implantation is facilitated.
The invention also provides an ion implanter which comprises a controller, an ion source, a beam blocker, an accelerator and a current measuring device, wherein the ion beam emitted from the ion source sequentially passes through the accelerator, the beam blocker and the current detecting device;
the current measuring device measures the current of the passing ion beam, converts the measured current into a current signal and sends the current signal to the controller;
the controller receives the current signal, compares the current signal with a preset current parameter and sends a control instruction to the light beam blocker;
and the beam blocker rotates according to the received control command to change the ion beam throughput of the beam blocker.
Compared with the prior art, according to the ion implanter provided by the invention, the current measuring device can detect the current of the ion beam in real time, convert the detected current into a current signal and feed the current signal back to the controller, and the controller compares the current signal with the current parameters preset in different working procedures. When the current signal is different from the preset current parameter, the controller controls the rotation of the light beam blocker to change the angle between the channel of the light beam blocker and the incidence direction of the ion beam; and when the current signal is the same as the preset current parameter, the controller controls the light beam blocker to stop rotating. At this time, in different processes of the ion implantation process, the ion beam throughput is controlled by adjusting the rotation of the beam stopper, and the on-off and throughput of the ion beam are flexibly controlled. According to the ion implanter, the parameters of the machine table do not need to be reset, the ion implanter can flexibly adapt to the change of different procedures, the capacity is improved, and the cost is reduced.
Drawings
FIG. 1 is a basic flow diagram of a first embodiment of the present invention;
FIG. 2 is a process flow diagram of a first embodiment of the invention;
FIG. 3 is an overall schematic view of a second embodiment of the present invention;
FIG. 4 is a schematic diagram of the construction of a beam stop according to the present invention;
FIG. 5 is a process flow diagram of a second embodiment of the invention;
fig. 6 is a process flow diagram of a third embodiment of the present invention.
Description of reference numerals:
100. a controller; 1. an ion source; 2. a beam blocker; 3. an accelerator; 4. a current measuring device; 5. a process chamber; 6. a channel; 7. a motor; 8. an energy magnetic field; 9. a low beam current conversion region; 10. a high beam current conversion region; 11. and a homing module.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings. The schematic diagram of the control method of the ion beam and the structure of the ion implanter are simplified and shown in the attached drawings.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Implementation mode one
The first embodiment of the present invention provides a method for controlling an ion beam, which can flexibly adapt to the changes of different processes by controlling the rotation angles of the beam blockers 2 in different processes without resetting the parameters of the machine in each process, thereby improving the productivity and reducing the cost.
Specifically, referring to fig. 1 to 4, the method for controlling an ion beam includes the steps of:
step S1: the ion beam emitted from the ion source 1 reaches the accelerator 3, and the accelerator 3 accelerates the passing ion beam to obtain a high-speed ion beam;
step S2: the accelerated ion beam reaches the beam blocker 2, and the controller 100 controls the passage 6 of the beam blocker 2 to be in a closed state or an open state with respect to the ion beam;
step S3: the current measuring device 4 measures the current of the ion beam passing through the beam blocker 2, and converts the measured current into a current signal to be transmitted to the controller 100;
step S4: the controller 100 receives the current signal, compares the current signal with a preset current parameter, and sends a control instruction to the light beam blocker 2;
step S5: the beam blocker 2 rotates according to the received control command, and the ion beam throughput of the beam blocker 2 is changed.
Compared with the prior art, according to the control method of the ion beam provided by the invention, the current measuring device 4 can detect the current in real time and convert the detection result into the current signal to be fed back to the controller 100, and the controller 100 compares the current signal with the current parameters preset in different procedures. When the current signal is different from the preset current parameter, the controller 100 controls the rotation of the beam blocker 2 to change the ion beam throughput of the beam blocker 2; when the current signal is the same as the preset current, the controller 100 controls the beam stopper 2 to stop rotating or to remain stationary.
At this time, in different processes of the ion implantation process, the angle between the passage 6 of the beam stopper 2 and the incident direction of the ion beam is changed by adjusting the rotation of the beam stopper 2, that is, the throughput of the ion beam that can pass through the beam stopper 2 is changed, and the on/off and throughput of the ion beam are flexibly controlled. According to the control method of the ion beam, the parameters of the machine table do not need to be reset, the change of different procedures can be flexibly adapted, the capacity is improved, and the cost is reduced.
In addition, when the injection dosage of the ion source 1 changes, the rotation of the beam stopper 2 can be directly adjusted without adjusting the arc voltage of the source head part of the ion implanter and the current of the accelerator 3, so that the program is simplified, and the output is improved.
In step S2, the beam blocker 2 is driven to rotate by a motor 7, which may be a stepper motor, connected to the controller 100 in communication with the motor 7. The blocking efficiency of the beam blocker 2 is improved by utilizing the advantages of flexibility and accuracy in driving, reliability in operation and the like of the motor 7, and further the productivity and efficiency of ion implantation are improved.
Specifically, in step S5, the controller 100 controls the beam throughput of the beam blocker 2 to be linearly varied. At this time, the controller 100 may calculate the time required for the light beam blocker 2 to rotate according to the current parameter change preset in different processes. The controller 100 can precisely control the throughput of the ion beam passing through the beam blocker 2, thereby flexibly adapting to the change of different processes and improving the ion implantation productivity.
In this embodiment, the passage 6 of the beam stopper 2 has a rectangular shape, and in other embodiments, the passage 6 of the beam stopper 2 may have other regular patterns such as a circular shape and an elliptical shape, or an irregular pattern. Further, in step S5, the controller 100 controls the rotation of the beam stopper 2 to follow the following law: sin (ω t) ═ vt,
where ω denotes a rotational angular velocity of the beam stopper 2, v denotes a change velocity of the size of the orthographic projection of the beam stopper 2 on the incident vertical plane of the ion beam, and t denotes time.
The controller 100 can change the size of the actual channel 6 for the ion beam to pass through by the light beam blocker 2 by adjusting the rotation angle of the light beam blocker 2, so that the controller 100 can conveniently control the throughput of the ion beam, thereby flexibly adapting to the change of different procedures and improving the ion implantation capacity.
Since the beam stopper 2 has a depth along the extending direction of the passage 6, when the angle between the passage 6 of the beam stopper 2 and the incident direction of the ion beam is arctan (d/h) or more, the beam stopper 2 is in a closed state with respect to the ion beam emitted from the ion source 1. Where d denotes an inner diameter of the channel 6 of the beam stopper 2 in its rotational direction, and h denotes a depth of the channel 6 of the beam stopper 2. Therefore, 0 to arctan (d/h) can be considered as an effective angle of the beam stopper 2, that is, an angle range in which the beam stopper 2 is in an open state with respect to the ion beam. arctan (d/h) -90 deg. is the invalid angle of beam blocker 2, i.e. the angle range in which beam blocker 2 is in a closed state with respect to the ion beam. In step S5, the controller 100 only needs to control the rotation angle of the light beam blocker 2 to 0-arctan (d/h), and the control range of the controller 100 is reduced, which is convenient for control, and is also beneficial to the precise control of the controller 100, and improves the control precision of the controller 100.
As seen from fig. 1 and 2, the present embodiment further includes step S51: the passing ion beam is energy screened by means of an energy magnetic field 8 arranged between the beam stop 2 and the current measuring device 4. Through setting up energy magnetic field 8, carry out the energy screening to the ion beam that passes through, be favorable to improving the linearity and the energy degree of consistency of the ion beam that reach technology cavity 5, and then improve the productivity of ion implantation.
The beam stopper 2 is generally made of graphite, and when the beam stopper 2 is inclined with respect to the ion beam, the ion beam strikes the beam stopper 2, which easily changes the direction of the ion beam, and the ion beam is disordered. The step of setting the beam blocker 2 before the step of the energy magnetic field 8 can facilitate the energy magnetic field 8 to screen and correct disordered ion beams so as to improve the linearity of the ion beams. In addition, if the step of the energy magnetic field 8 is set before the step of the beam blocker 2, it may cause the concentrated ion beam to hit the beam blocker 2 and then shoot out the graphite, and according to the present embodiment, it may be avoided that the concentrated ion beam hits the beam blocker 2 and then shoots out the graphite to pollute the environment, which is more convenient for maintaining the ion implanter.
Referring to fig. 1, when the controller 100 controls the rotation of the beam blocker 2, the throughput of the ion beam passing through the beam blocker 2 is constantly changing, and during the changing, the current signal detected by the current detection device 4 is still in the dynamic changing process, and the data is not stable enough. In step S4, the method further includes a sub-step S41: the controller 100 analyzes the received current signal, and if the current signal is within a specific value range for a set time, the controller 100 controls the rotation of the beam stopper 2. That is, only when the current signal exceeds or is lower than the preset current for a certain time, the controller 100 controls the rotation of the beam stopper 2, so that the control of the controller 100 is more accurate and efficient, which is beneficial to improving the ion implantation productivity.
As shown in fig. 1, the present embodiment further includes step S6: after each ion implantation process is completed, the controller 100 controls the passage 6 of the beam stopper 2 to be in a closed state with respect to the ion beam. After each ion implantation process is finished, the light beam blocker 2 is reset, so that the controller 100 can conveniently control a new ion implantation process.
The specific working principle and steps of the first embodiment are as follows:
the ion source 1 ionizes neutral atoms or molecules and extracts an ion beam therefrom. The ion beam reaches the accelerator 3, and the accelerator 3 accelerates the passing ion beam to obtain a high-speed and high-energy ion beam. The accelerated ion beam reaches the beam blocker 2, and the beam blocker 2 controls the on-off and the throughput of the ion beam. The ion beam passing through the beam blocker 2 reaches the energy magnetic field 8, and the energy magnetic field 8 screens the energy of the passing ion beam, so that the linearity of the ion beam is improved. The ion beam passing through the energy magnetic field 8 reaches the subsequent process chamber 5, and performs ion implantation on the object inside the process chamber 5. After the ion implantation process is completed, the controller 100 controls the beam blocker 2 to rotate, and the beam blocker 2 is in a closed state with respect to the ion beam. The controller 100 receives the current signal and compares the current signal with current parameters preset in different processes. When the current signal is different from the preset current parameter, the controller 100 controls the rotation of the beam blocker 2 to change the ion beam throughput of the beam blocker 2. Meanwhile, the controller 100 analyzes the received current signal, and if the current signal continues for a set time within a specific value range, the controller 100 controls the rotation of the beam stopper 2. When the current signal is the same as the preset current parameter, the controller 100 controls the light beam blocker 2 to stop rotating.
Second embodiment
The second embodiment of the present invention provides an ion implanter, which can flexibly adapt to the change of different processes by controlling the rotation angle of the beam blocker 2 in different processes without resetting the parameters of the machine in each process, thereby improving the productivity and reducing the cost.
Referring to fig. 3 and 4, the ion implanter of the present invention includes a controller 100, an ion source 1, a beam blocker 2, an accelerator 3, and a current measuring device 4, wherein the ion source 1, the beam blocker 2, the accelerator 3, and the current measuring device 4 are all communicatively connected to the controller 100. In the present embodiment, the ion source 1, the accelerator 3, the beam blocker 2, the current measuring device 4, and the process chamber 5 are arranged in the order of flow of the ion beam.
The current measuring device 4 measures the current of the passing ion beam, converts the measured current into a current signal and sends the current signal to the controller 100; the controller 100 receives the current signal, compares the current signal with a preset current parameter, and sends a control instruction to the light beam blocker 2; the beam blocker 2 rotates according to the received control command, and the ion beam throughput of the beam blocker 2 is changed.
Compared with the prior art, according to the ion implanter provided by the invention, in different processes of the ion implantation process, the angle between the passage 6 of the beam blocker 2 and the incidence direction of the ion beam is changed by adjusting the rotation of the beam blocker 2, so that the quantity of the ion beam passing through the beam blocker 2 can be changed, and the on-off and the throughput of the ion beam can be flexibly controlled.
In addition, when the implantation dose of the ion source 1 is changed, the arc voltage of the source head part of the ion implanter and the size of the linear accelerator 3 do not need to be adjusted, and the ion beam throughput is controlled only by adjusting the rotation of the beam stopper, so that the on-off and the throughput of the ion beam can be flexibly controlled, and the output is improved.
The ion source 1 ionizes neutral atoms or molecules and extracts an ion beam therefrom. In particular, the ion source 1 may be an Indirect Heated Cathode (IHC) ion source, a Radio Frequency (RF) ion source, a microwave ion source, or other ion source.
Referring to fig. 4, the beam stop 2 has a passage 6 through which the ion beam passes. In this embodiment, the passage 6 of the beam stopper 2 has a rectangular shape, and in other embodiments, the passage 6 of the beam stopper 2 may have other regular patterns such as a circular shape and an elliptical shape, or irregular patterns.
Referring to fig. 4, beam blocker 2 is connected to a driver, which is in communication with controller 100. Controller 100 controls the operation of the driving member, and thus drives the rotation of beam blocker 2. Preferably, the driving member is a motor 7, and the motor 7 may be a stepping motor. The advantages of flexible and accurate driving, reliable operation and the like of the motor 7 are utilized, the blocking efficiency of the light beam blocker 2 is favorably improved, and the productivity and the efficiency of ion implantation are favorably improved.
The accelerator 3 is a linear accelerator, and the accelerator 3 is used for accelerating the passing ion beam to obtain a high-speed and high-energy ion beam.
The current measuring device 4 is used for measuring the current of the ion beam, and converting the measured current into a current signal, which is fed back to the controller 100. The ion beam current is usually very small (μ a), and therefore, a picoammeter or an electrometer is used as the current measuring device 4, improving the current measurement accuracy.
Referring to fig. 3, an energy magnetic field 8 is disposed between the beam blocker 2 and the current measuring device 4, and the shape of the passing ion beam is corrected by the energy magnetic field 8, so as to ensure that the ion beam emitted from the energy magnetic field 8 has high linearity. Meanwhile, the energy magnetic field 8 can perform energy screening on the passing ion beams, so that the ion beams with specific energy can smoothly pass through the magnetic field. The ion beam corrected and screened by the energy magnetic field 8 has excellent linearity and uniform electric energy, and the ion beam can uniformly and stably implant ions of the to-be-implanted substance in the process chamber 5, thereby improving the ion implantation efficiency.
In addition, the arrangement of the energy magnetic field 8 enables more ion beams to be screened through the energy magnetic field 8 instead of only through the beam blocker 2, and the ion beams cannot be rebounded to the external environment like when passing through the beam blocker 2, so that the utilization rate of the ion beams is improved, the loss of the ion beams is reduced, the cost is saved, and the environment is protected.
The beam stopper 2 is arranged in front of the energy magnetic field 8, so that ion beams reflected at the beam stopper 2 can be prevented from entering the process chamber 5 disorderly, the sputtering of graphite is reduced, and the environment is protected.
The second embodiment has the following specific working principle and steps:
the ion source 1 ionizes neutral atoms or molecules and extracts an ion beam therefrom. The ion beam reaches the accelerator 3, and the accelerator 3 accelerates the passing ion beam to obtain a high-speed and high-energy ion beam. The accelerated ion beam reaches the beam blocker 2, and the beam blocker 2 controls the on-off and the throughput of the ion beam. The ion beam passing through the beam blocker 2 reaches the energy magnetic field 8, and the energy magnetic field 8 screens the energy of the passing ion beam, so that the linearity of the ion beam is improved. The ion beam passing through the energy magnetic field 8 reaches the process chamber 5 and performs ion implantation on the object inside the process chamber 5. The current measuring device 4 detects the current and feeds the current back to the controller 100, and the working principle of the controller 100 controlling the rotation of the light beam blocker 2 is the same as that of the first embodiment, which is not described herein.
Third embodiment
A third embodiment of the present invention provides an ion implanter which is a further improvement of the two embodiments, and is mainly improved in that, in the third embodiment of the present invention, as seen in fig. 6, a region between the ion source 1 and the beam blocker 2 is formed as a low beam current converting region 9, and the low beam current converting region 9 can convert the direction of the passing ion beam. The region between the accelerator 3 and the process chamber 5 is formed as a high beam conversion region 10, which high beam conversion region 10 can convert the direction of the passing ion beam. The low beam conversion region 9 and the high beam conversion region 10 each perform conversion in the ion beam direction by using a magnetic field.
The controller 100 further has a homing module 11, and after each ion implantation process is completed, the homing module 11 of the controller 100 operates to make the channel 6 of the beam blocker 2 in a closed state relative to the ion source 1, so that the controller 100 can conveniently control a new round of ion implantation process.
The third embodiment has the following specific working principle and steps:
the controller 100 controls the beam blocker 2 to rotate, and the beam blocker 2 is in an open state with respect to the ion beam. The ion source 1 ionizes neutral atoms or molecules and extracts an ion beam therefrom. The ion beam changes its direction at the low beam current switching region 9 so that the ion beam is incident in a linear manner on the accelerator 3. The ion beam reaches the accelerator 3, and the accelerator 3 accelerates the passing ion beam to obtain a high-speed and high-energy ion beam. The accelerated ion beam reaches the beam blocker 2, and the beam blocker 2 controls the on-off and the throughput of the ion beam. The ion beam passing through the beam blocker 2 reaches the energy magnetic field 8, and the energy magnetic field 8 screens the energy of the passing ion beam, so that the linearity of the ion beam is improved. Ions emitted from the energy magnetic field 8 change the direction of the ion beam in the high beam transition region 10 such that the ion beam is emitted into the process chamber 5 in a linear fashion. The ion beam passing through the high beam current conversion region 10 reaches the process chamber 5, and performs ion implantation on the object inside the process chamber 5. After the ion implantation process is finished, the homing module 11 of the controller 100 operates to control the beam blocker 2 to rotate, and the beam blocker 2 is in a closed state with respect to the ion beam. The current measuring device 4 detects the current and feeds the current back to the controller 100, and the working principle of the controller 100 controlling the rotation of the light beam blocker 2 is the same as the first embodiment and the second embodiment, which is not described herein.
It is obvious to those skilled in the art that the respective steps of the above-described control method can be deleted or adjusted in order as necessary within the scope of the technical idea of the present invention.
It will be appreciated by those of ordinary skill in the art that in the embodiments described above, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the claims of the present application can be basically implemented without these technical details and various changes and modifications based on the above-described embodiments. Accordingly, in actual practice, various changes in form and detail may be made to the above-described embodiments without departing from the spirit and scope of the invention.
Claims (8)
1. A method of controlling an ion beam, comprising the steps of:
step S1: an ion beam emitted from an ion source reaches an accelerator, and the accelerator accelerates the passing ion beam;
step S2: the accelerated ion beam is guided to a beam blocker, and a controller controls a channel of the beam blocker to be in a closed state or an open state relative to the ion beam;
step S3: the current measuring device measures the current of the ion beam passing through the beam blocker, converts the measured current into a current signal and sends the current signal to the controller;
step S4: the controller receives the current signal, compares the current signal with current parameters preset in different working procedures, and sends a control instruction to the light beam blocker;
step S5: the beam blocker rotates according to the received control command to adjust the ion beam throughput of the beam blocker,
in step S4, the method includes the following substeps:
step S41: the controller analyzes the received current signal, and controls the rotation of the light beam blocker if the current signal lasts for a set time within a specific numerical range.
2. The method of claim 1, wherein in step S5, the controller controls the beam blocker to change the beam throughput linearly.
3. The method of claim 2, wherein the path of the beam stopper is rectangular, and in step S5, the controller controls the beam stopper to rotate according to the following rule:
sin(ωt)＝vt，
where ω denotes a rotational angular velocity of the beam stop, v denotes a change velocity of a size of an orthogonal projection of the beam stop on an incident vertical plane of the ion beam, and t denotes time.
4. The method of controlling an ion beam according to any one of claims 1 to 3, wherein the controller controls the angle of the passage of the beam stopper to the incident direction of the ion beam to be 0 ° to arctan (d/h) in step S5, wherein d represents an inner diameter of the passage of the beam stopper in the rotational direction thereof, and h represents a passage depth of the beam stopper.
5. The method for controlling an ion beam according to any one of claims 1 to 3, further comprising step S6: after each ion implantation process is finished, the controller controls the passage of the beam blocker to be in a closed state relative to the ion beam.
6. The method for controlling an ion beam according to any one of claims 1 to 3, further comprising step S51: and screening the energy of the passing ion beam by using an energy magnetic field arranged between the beam stopper and the current measuring device.
7. The method of claim 5, further comprising step S51: and screening the energy of the passing ion beam by using an energy magnetic field arranged between the beam stopper and the current measuring device.
8. The method according to any one of claims 1 to 3 or 7, wherein in step S5, the beam blocker is driven to rotate by a motor, and the motor is in communication with the controller.
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| JP6253362B2 (en) * | 2013-11-21 | 2017-12-27 | 住友重機械イオンテクノロジー株式会社 | High energy ion implantation apparatus, beam current adjusting apparatus, and beam current adjusting method |
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Effective date of registration: 20230721 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee after: Huaian Xide Industrial Design Co.,Ltd. Address before: 223300 no.599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |