CN109166863A - Apparatus for coating and its coating method, tft array substrate - Google Patents
Apparatus for coating and its coating method, tft array substrate Download PDFInfo
- Publication number
- CN109166863A CN109166863A CN201810827436.6A CN201810827436A CN109166863A CN 109166863 A CN109166863 A CN 109166863A CN 201810827436 A CN201810827436 A CN 201810827436A CN 109166863 A CN109166863 A CN 109166863A
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- sebific duct
- conductive part
- insulation division
- ozzle
- control piece
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000000576 coating method Methods 0.000 title claims abstract description 39
- 239000011248 coating agent Substances 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 25
- 239000004568 cement Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of apparatus for coating and its coating method, tft array substrate, the tft array substrate includes tft layer and the encapsulated layer set on the thin film transistor (TFT) layer surface, the encapsulated layer is arranged around the edge of the tft layer, the encapsulated layer includes support portion and conductive part, and the conductive part is for being connected the tft array substrate and CF substrate.The present invention also provides the apparatus for coating and its coating method that are used to form encapsulated layer, the apparatus for coating includes driver and memory, the memory includes the first sebific duct, the second sebific duct, ozzle and control piece, the control piece controls the on-off of the first sebific duct, the second sebific duct and ozzle to show Discrete control as desired, simplifies preparation process, saves preparation time.
Description
Technical field
The present invention relates to liquid crystal display fabricating technology field more particularly to a kind of apparatus for coating and its coating sides
Method, tft array substrate.
Background technique
Liquid crystal display has many advantages, such as that fuselage is thin, low in energy consumption, radiationless, is more and more widely used.TFT liquid
Crystal display generally comprises thin film transistor base plate (Array substrate), colored filter substrate (CF substrate), is applied by frame adhesive
Cloth technique is sealed Array substrate and CF substrate, and existing sealing means are to be coated with one layer absolutely on the surface of Array substrate
Box is arranged in Array substrate and CF substrate after edge glue, this coating method is not able to satisfy the demand of GOA machine.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of apparatus for coating and its coating method, tft array substrate, can
Meets the needs of GOA machine.
It is proposed by the present invention the specific technical proposal is: providing a kind of tft array substrate, the tft array substrate includes thin
Film transistor layer and encapsulated layer set on the thin film transistor (TFT) layer surface, the encapsulated layer is around the tft layer
Edge setting, the encapsulated layer include support portion and conductive part, and the conductive part is for being connected the tft array substrate and CF base
Plate.
Further, in a ring, the conductive part is set to the inside of the support portion to the support portion.
Further, the conductive part includes spaced multiple conductiving points.
Further, in a ring, the support portion includes the first insulation division and the second insulation division to the encapsulated layer, described to lead
Electric portion is connected between first insulation division and second insulation division, first insulation division, the second insulation division, conductive part
Form the encapsulated layer.
Further, the material of the support portion is insulating cement, and the material of the conductive part is conductive gold size.
The present invention also provides a kind of apparatus for coating, the apparatus for coating includes driver and memory, the driver
For driving the memory mobile, the memory includes the first sebific duct, the second sebific duct, ozzle and control piece, and described first
Sebific duct, the second sebific duct, ozzle are connect with the control piece, and the control piece is for controlling first sebific duct, the second sebific duct
With the on-off of the ozzle.
Further, the control piece is two-port valve.
The present invention also provides a kind of coating method of apparatus for coating, the apparatus for coating includes driver and memory,
For the driver for driving the memory mobile, the memory includes the first sebific duct, the second sebific duct, ozzle and control
Part, first sebific duct, the second sebific duct, ozzle are connect with the control piece, and the control piece is for controlling first glue
Pipe, the second sebific duct and the ozzle on-off, the coating method the following steps are included:
A tft layer is provided, the tft layer includes Support and conduction region；
The driver drives the memory to be moved to the top of the Support, the control piece control described first
Sebific duct is connected with the ozzle, the first encapsulating material is coated in the Support, to obtain support portion；
The driver drives the memory to be moved to the top of the conduction region, the control piece control described second
Sebific duct is connected with the ozzle, is coated with the second encapsulating material in the conduction region, to obtain conductive part, the conductive part with it is described
Support portion forms the encapsulated layer that the edge around the tft layer is arranged.
Further, in a ring, the support portion includes the first insulation division and the second insulation division to the encapsulated layer, described to lead
Electric portion is connected between first insulation division and second insulation division, first insulation division, the second insulation division, conductive part
The encapsulated layer is formed, after step provides a tft layer, the coating method includes:
The driver drives the memory to be moved to the top of the Support, the control piece control described first
Sebific duct is connected with the ozzle, the first encapsulating material is coated in the Support, to obtain the first insulation division；
The driver drives the memory to be moved to the top of the conduction region, the control piece control described second
Sebific duct is connected with the ozzle, the second encapsulating material is coated in the conduction region, to obtain conductive part；
The driver drives the memory to be moved to the top of the Support, the control piece control described first
Sebific duct is connected with the ozzle, the first encapsulating material is coated in the Support, to obtain the second insulation division.
The encapsulated layer of tft array substrate proposed by the present invention includes support portion and conductive part, and the conductive part is for being connected
CF substrate, the present invention also provides the apparatus for coating and its coating method that are used to form encapsulated layer, the apparatus for coating includes driving
Dynamic device and memory, the memory include the first sebific duct, the second sebific duct, ozzle and control piece, the control piece control first
The on-off of sebific duct, the second sebific duct and ozzle shows Discrete control as desired, simplifies preparation process, saves preparation time.
Detailed description of the invention
With reference to the accompanying drawing, by the way that detailed description of specific embodiments of the present invention, technical solution of the present invention will be made
And other beneficial effects are apparent.
Fig. 1 is the structural schematic diagram of tft array substrate；
Fig. 2 is another structural schematic diagram of tft array substrate；
Fig. 3 is the structural schematic diagram of apparatus for coating.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, identical label will be used for table always
Show identical element.
Referring to Fig.1, tft array substrate 1 provided in this embodiment including tft layer 11 and is set to thin film transistor (TFT)
The encapsulated layer 12 on 11 surface of layer, encapsulated layer 12 are arranged around the edge of tft layer 11, and encapsulated layer 12 includes support portion 12a
With conductive part 12b, conductive part 12b is for being connected tft array substrate 1 and CF substrate 2.
Box is arranged in tft array substrate 1 and CF substrate 2, encapsulated layer 12 be located in tft array substrate 1 and CF substrate 2 it
Between, it is used to be packaged tft array substrate 1 and CF substrate 2.In encapsulation process, for GOA machine, thin film transistor (TFT)
The metallic circuit of 11 surface exposure of layer needs to be connected with CF substrate 2, at the metallic circuit of 11 surface exposure of tft layer
It is correspondingly arranged conductive part 12b, tft array substrate 1 and CF substrate 2 are connected by conductive part 12b, is carried out by support portion 12a close
CF substrate 2 is sealed and supported, tft array substrate 1 and CF substrate 2 is connected while being sealed to GOA machine to realize.
In a ring, conductive part 12b is interior set on support portion 12a's by support portion 12a in the first embodiment of the present embodiment
Side.The support portion 12a of annular is arranged around the edge of tft layer 11, and conductive part 12b setting is needed in tft array substrate 1
At 2 conducting of CF substrate, i.e., at the metallic circuit of 11 surface exposure of tft layer.Here, refer on the inside of support portion 12a
It is side of the support portion 12a towards the center of tft layer 11, it can by the inside that support portion 12a is arranged in conductive part 12b
To be sealed protection to conductive part 12b by annular support portion 12a, so that conductive part 12b be avoided to be oxidized and influence
Electric conductivity.
Preferably, conductive part 12b includes spaced multiple conductiving points 100, multiple conductiving points 100 are located at support portion
12a opposite both sides and positioned at support portion 12a it is same on one side on conductiving point 100 be arranged at equal intervals, it is different to be located at support portion 12a
Side on conductiving point 100 it is symmetrical about the center line of tft layer 11, wherein the center line of tft layer 11 refers to
Be and be equipped with the parallel center line in the side of tft layer 11 of conductiving point 100.
Certainly, in the first embodiment, the position of conductiving point 100 can also be arranged in elsewhere, can be according to reality
Border needs to set the position of conductiving point 100, as long as meeting conductiving point 100 and tft array substrate 1 and at 2 conducting of CF substrate pairs
It should.
Referring to Fig. 2, the present embodiment additionally provides a kind of apparatus for coating, seals for being formed on the surface of tft layer 11
Layer 12 is filled, apparatus for coating includes driver 21 and memory 22, and for driving memory 22 mobile, memory 22 wraps driver 21
Include the first sebific duct 22a, the second sebific duct 22b, ozzle 22c and control piece 22d, the first sebific duct 22a, the second sebific duct 22b, ozzle 22c
It is connect with control piece 22d, control piece 22d is used to control the on-off of the first sebific duct 22a, the second sebific duct 22b and ozzle 22c.
First sebific duct 22a is for storing the first encapsulating material, and the second sebific duct 22b is for storing the second encapsulating material.Driving
Device 21 is cylinder, for driving memory 22 mobile.Preferably, control piece 22d is two-port valve, i.e., it has there are two channel, the
A channel is formed when one sebific duct 22a is connected with ozzle 22c, the second sebific duct 22b forms another when being connected with ozzle 22c logical
Road, two-port valve, which can be, to be manually controlled, and is also possible to solenoid valve.
The present embodiment additionally provides the coating method of above-mentioned apparatus for coating, with the tft array substrate 1 in first embodiment
For, the coating method the following steps are included:
S1, a tft layer 11 is provided, tft layer 11 includes Support and conduction region；
S2, driver 21 drive memory 22 to be moved to the top of Support, control piece 22d control the first sebific duct 22a with
Ozzle 22c conducting is coated with the first encapsulating material in Support, to obtain support portion 12a, in the first embodiment, support portion
12a is in a ring；
S3, driver 21 drive memory 22 to be moved to the top of conduction region, control piece 22d control the second sebific duct 22b with
Ozzle 22c conducting is coated with the second encapsulating material in conduction region, and to obtain conductive part 12b, conductive part 12b is formed with support portion 12a
The encapsulated layer 12 being arranged around the edge of tft layer 11, in the first embodiment, conductive part 12b include interval setting
Multiple conductiving points 100, multiple conductiving points 100 are formed by dotting process.
Referring to Fig. 3, in the second embodiment of the present embodiment, in a ring, support portion 12a includes first exhausted to encapsulated layer 12
Edge 101 and the second insulation division 102, conductive part 12b are connected between the first insulation division 101 and the second insulation division 102, and first absolutely
Edge 101, the second insulation division 102, conductive part 12b form encapsulated layer 12.
Specifically, conductive part 12b is in a strip shape, and the quantity of conductive part 12b is two, and two conductive part 12b are respectively arranged at
Support portion 12a opposite both sides, alternately head and the tail connection is formed for two conductive part 12b, the first insulation division 101, the second insulation division 102
The encapsulated layer 12 of annular.
In a second embodiment, it since conductive part 12b is connected between the first insulation division 101 and the second insulation division 102, leads
Electric portion 12b, the first insulation division 101, the second insulation division 102 are equidistant with 11 edge of tft layer, using the TFT gusts
The border width of the liquid crystal display of column substrate 1 is equal to conductive part 12b, the first insulation division 101, the second insulation division 102 and arrives film
The distance at 11 edge of transistor layer, and in the first embodiment, conductive part 12b is set to the inside of support portion 12a, using this
The distance that the border width of the liquid crystal display of tft array substrate 1 is equal to support portion 12a to 11 edge of tft layer adds
The sum of the distance between conductive part 12b to support portion 12a, therefore, the tft array substrate 1 in second embodiment can be realized
Narrow frame design.
The material of the support portion 12a in first embodiment, second embodiment in the present embodiment is insulating cement, conductive
The material of portion 12b is conductive gold size, and the material of support portion 12a is the insulating cement with certain degree of hardness, can play support CF base
The effect of plate 2, the material of conductive part 12b are selected as conductive gold size with preferable electric conductivity.
The corresponding coating method of tft array substrate 1 in second embodiment the following steps are included:
S1, a tft layer 11 is provided, tft layer 11 includes Support and conduction region；
S2, driver 21 drive memory 22 to be moved to the top of Support, control piece 22d control the first sebific duct 22a with
Ozzle 22c conducting is coated with the first encapsulating material in Support, to obtain the first insulation division 101；
S3, driver 21 drive memory 22 to be moved to the top of conduction region, control piece 22d control the second sebific duct 22b with
Ozzle 22c conducting is coated with the second encapsulating material in conduction region, to obtain conductive part 12b；
S4, driver 21 drive memory 22 to be moved to the top of Support, control piece 22d control the first sebific duct 22a with
Ozzle 22c conducting is coated with the first encapsulating material in Support, to obtain the second insulation division 102, the first insulation division 101 and second
Insulation division 102 constitutes support portion 12a, and conductive part 12b is connected between the first insulation division 101 and the second insulation division 102, and first absolutely
Edge 101, the second insulation division 102, conductive part 12b form encapsulated layer 12.
In this second embodiment, conductive part 12b is strip, does not need to carry out dotting process, avoids getting wide cause ready
Light leakage and cut it is bad, while realizing narrow frame simplify preparation process, saving preparation time.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (9)
1. a kind of tft array substrate, which is characterized in that including tft layer and set on the thin film transistor (TFT) layer surface
Encapsulated layer, the encapsulated layer are arranged around the edge of the tft layer, and the encapsulated layer includes support portion and conductive part,
The conductive part is for being connected the tft array substrate and CF substrate.
2. tft array substrate according to claim 1, which is characterized in that in a ring, the conductive part is set the support portion
In the inside of the support portion.
3. tft array substrate according to claim 2, which is characterized in that the conductive part includes spaced multiple
Conductiving point.
4. tft array substrate according to claim 1, which is characterized in that the encapsulated layer in a ring, the support portion packet
The first insulation division and the second insulation division are included, the conductive part is connected between first insulation division and second insulation division,
First insulation division, the second insulation division, conductive part form the encapsulated layer.
5. tft array substrate according to claim 1, which is characterized in that the material of the support portion is insulating cement, described
The material of conductive part is conductive gold size.
6. a kind of apparatus for coating, which is characterized in that including driver and memory, the driver is for driving the memory
Mobile, the memory includes the first sebific duct, the second sebific duct, ozzle and control piece, first sebific duct, the second sebific duct, ozzle
It is connect with the control piece, the control piece is used to control the on-off of first sebific duct, the second sebific duct and the ozzle.
7. apparatus for coating according to claim 6, which is characterized in that the control piece is two-port valve.
8. a kind of coating method of apparatus for coating, which is characterized in that the apparatus for coating includes driver and memory, the drive
For dynamic device for driving the memory mobile, the memory includes the first sebific duct, the second sebific duct, ozzle and control piece, described
First sebific duct, the second sebific duct, ozzle are connect with the control piece, and the control piece is for controlling first sebific duct, second
The on-off of sebific duct and the ozzle, the coating method the following steps are included:
A tft layer is provided, the tft layer includes Support and conduction region；
The driver drives the memory to be moved to the top of the Support, and the control piece controls first sebific duct
It is connected with the ozzle, the first encapsulating material is coated in the Support, to obtain support portion；
The driver drives the memory to be moved to the top of the conduction region, and the control piece controls second sebific duct
It is connected with the ozzle, the second encapsulating material is coated in the conduction region, to obtain conductive part, the conductive part and the support
Portion forms the encapsulated layer that the edge around the tft layer is arranged.
9. coating method according to claim 8, which is characterized in that in a ring, the support portion includes the encapsulated layer
First insulation division and the second insulation division, the conductive part are connected between first insulation division and second insulation division, institute
It states the first insulation division, the second insulation division, conductive part and forms the encapsulated layer, it is described after step provides a tft layer
Coating method includes:
The driver drives the memory to be moved to the top of the Support, and the control piece controls first sebific duct
It is connected with the ozzle, the first encapsulating material is coated in the Support, to obtain the first insulation division；
The driver drives the memory to be moved to the top of the conduction region, and the control piece controls second sebific duct
It is connected with the ozzle, the second encapsulating material is coated in the conduction region, to obtain conductive part；
The driver drives the memory to be moved to the top of the Support, and the control piece controls first sebific duct
It is connected with the ozzle, the first encapsulating material is coated in the Support, to obtain the second insulation division.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810827436.6A CN109166863A (en) | 2018-07-25 | 2018-07-25 | Apparatus for coating and its coating method, tft array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810827436.6A CN109166863A (en) | 2018-07-25 | 2018-07-25 | Apparatus for coating and its coating method, tft array substrate |
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| Publication Number | Publication Date |
|---|---|
| CN109166863A true CN109166863A (en) | 2019-01-08 |
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|---|---|---|---|
| CN201810827436.6A Pending CN109166863A (en) | 2018-07-25 | 2018-07-25 | Apparatus for coating and its coating method, tft array substrate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101394A (en) * | 2006-07-07 | 2008-01-09 | 群康科技(深圳)有限公司 | Liquid crystal display panel and method for producing same |
| CN101655617A (en) * | 2009-07-27 | 2010-02-24 | 天马微电子股份有限公司 | Liquid crystal display device |
| US20120327355A1 (en) * | 2011-06-24 | 2012-12-27 | Au Optronics Corporation | Liquid crystal display panel |
| CN103278970A (en) * | 2013-04-13 | 2013-09-04 | 福建华映显示科技有限公司 | Display panel and manufacturing method of display panel |
-
2018
- 2018-07-25 CN CN201810827436.6A patent/CN109166863A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101394A (en) * | 2006-07-07 | 2008-01-09 | 群康科技(深圳)有限公司 | Liquid crystal display panel and method for producing same |
| CN101655617A (en) * | 2009-07-27 | 2010-02-24 | 天马微电子股份有限公司 | Liquid crystal display device |
| US20120327355A1 (en) * | 2011-06-24 | 2012-12-27 | Au Optronics Corporation | Liquid crystal display panel |
| CN103278970A (en) * | 2013-04-13 | 2013-09-04 | 福建华映显示科技有限公司 | Display panel and manufacturing method of display panel |
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