CN109164141A - Photoelectric detection system, system and method - Google Patents
Photoelectric detection system, system and method Download PDFInfo
- Publication number
- CN109164141A CN109164141A CN201811018215.0A CN201811018215A CN109164141A CN 109164141 A CN109164141 A CN 109164141A CN 201811018215 A CN201811018215 A CN 201811018215A CN 109164141 A CN109164141 A CN 109164141A
- Authority
- CN
- China
- Prior art keywords
- photoelectron
- signal
- pulse
- photoelectricity
- subevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000001514 detection method Methods 0.000 title claims abstract description 34
- 230000005622 photoelectricity Effects 0.000 claims abstract description 74
- 238000012545 processing Methods 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 238000009826 distribution Methods 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 238000012360 testing method Methods 0.000 claims abstract description 11
- 238000005259 measurement Methods 0.000 claims description 21
- 238000004364 calculation method Methods 0.000 claims description 8
- 210000001367 artery Anatomy 0.000 claims description 7
- 210000003462 vein Anatomy 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 238000004080 punching Methods 0.000 claims 2
- 239000000523 sample Substances 0.000 description 38
- 230000006870 function Effects 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000002596 correlated effect Effects 0.000 description 7
- 230000001360 synchronised effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000427 antigen Substances 0.000 description 5
- 102000036639 antigens Human genes 0.000 description 5
- 108091007433 antigens Proteins 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000004744 fabric Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 108020004414 DNA Proteins 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000005415 bioluminescence Methods 0.000 description 3
- 230000029918 bioluminescence Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 208000033748 Device issues Diseases 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- IGXWBGJHJZYPQS-SSDOTTSWSA-N D-Luciferin Chemical compound OC(=O)[C@H]1CSC(C=2SC3=CC=C(O)C=C3N=2)=N1 IGXWBGJHJZYPQS-SSDOTTSWSA-N 0.000 description 1
- 102000053602 DNA Human genes 0.000 description 1
- CYCGRDQQIOGCKX-UHFFFAOYSA-N Dehydro-luciferin Natural products OC(=O)C1=CSC(C=2SC3=CC(O)=CC=C3N=2)=N1 CYCGRDQQIOGCKX-UHFFFAOYSA-N 0.000 description 1
- BJGNCJDXODQBOB-UHFFFAOYSA-N Fivefly Luciferin Natural products OC(=O)C1CSC(C=2SC3=CC(O)=CC=C3N=2)=N1 BJGNCJDXODQBOB-UHFFFAOYSA-N 0.000 description 1
- DDWFXDSYGUXRAY-UHFFFAOYSA-N Luciferin Natural products CCc1c(C)c(CC2NC(=O)C(=C2C=C)C)[nH]c1Cc3[nH]c4C(=C5/NC(CC(=O)O)C(C)C5CC(=O)O)CC(=O)c4c3C DDWFXDSYGUXRAY-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012123 point-of-care testing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
Landscapes
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The present invention relates to a kind of photoelectric detection systems, system and method.The device includes silicon photoelectric multiplier, is used to detect sample by optical pulse irradiation later from the light pulse signal of the sample, and the signal that will test is converted to electric impulse signal；Signal cooperates with reading circuit, it connects the silicon photoelectric multiplier, the gate-control signal of the output of control silicon photoelectric multiplier is generated based on the pulse control signal collaboration for generating the light pulse signal for controlling luminescent device, so that silicon photoelectric multiplier is in gate photon counting mode, and the electric impulse signal of silicon photoelectric multiplier output is acquired in the gate duration of the gate-control signal；And signal processing unit, it connects the signal and cooperates with reading circuit, for the corresponding photoelectron number of pulse each in the electric impulse signal based on acquisition and photoelectricity subevent is counted, the average photoelectron number is calculated according to the probability function of Poisson distribution based on the photoelectron number of statistics when photoelectron event statistics result meets Poisson distribution condition.
Description
Technical field
The present invention relates to technical field of photoelectric detection more particularly to low light signals to detect, in particular to a kind of Photoelectric Detection
Devices, systems, and methods.
Background technique
Detecting technique is widely used in the fields such as scientific research, biomedicine and industrial production, and wherein bioluminescence is visited
Surveying has highly important application in medical domain.Fluorescence is a kind of luminescence generated by light phenomenon.It, can be with specifically in medical research
Fluorescence probe marks certain biomolecule, and the intensity by detecting fluorescence signal obtains the content of biomolecule.Real-time fluorescence is fixed
It measures round pcr and uses fluorescence probe marker DNA molecule, fluorescence intensity and DNA molecular concentration are linear, and fluorescence signal compares
It is faint, the variation that DNA molecular expands quantity can be obtained by by the variation of real-time monitoring fluorescence intensity.
Weak light detection can also measure the subtle reflectivity difference of material surface.Gold-marking immunity chromatograph test strip is used to detect
Specific antigen or antibody, can observe in test strips the color change of C line and T line qualitatively judge it is negative or positive, while by
It is linear in the concentration of the absorbance and colloidal gold of C line and T line, therefore the change of its reflectivity of quantitative detection can be passed through again
Change, to obtain the concentration of antigen or antibody.
(Santangelo M F, La Cono S, Vasquez P, the et al.CY5fluorescence of document 1
Measured with silicon photomultipliers, 2014 [C] .IEEE.) in report using silicon photoelectric multiplier
(SiPM) concentration for detecting Cy5 fluorescent dye, by the mode computation photoelectric current of current integration and the difference of dark current to obtain
To the concentration of Cy5 solution, but the signal-to-noise ratio of current integration mode measurement dim light is high without photon counting method, therefore is unable to measure more
Weak fluorescence signal.
(Mik L, Kucewicz W, Barszcz J, the et al.Silicon photomultiplier as of document 2
fluorescence light detector,MIXDES 2011,18th International Conference "Mixed
Design of Integrated Circuits and Systems ", June 16-18,2011, Gliwice, Poland) in
The method for describing triggering gate and Photoncounting methods acquisition fluorescence signal based on SiPM, is capable of measuring 60pg/ml to 1 μ g/
The luciferin solution of ml, wherein used photon counting method is the photoelectron sum in traditional cooling water of units of measurement time, but its
The disadvantage is that the correlated noises such as the optical crosstalk of SiPM, afterpulse cannot be removed, cause noise poor, detectivity is low.This
Outside, which needs to count the quantity of electric charge information of pulse, remakes statistical distribution, incompatible with monolithic FPGA, so that reading
Circuit structure is complicated and volume is larger.
Therefore, how dim light caused by low concentration sample is measured, and makes the sensitivity of measurement and precision high,
It is small and exquisite simple to test circuit, is suitably applied the quickly detection occasion such as medicine POCT (on-site test), the phase that becomes to be solved asks
Topic.
Summary of the invention
Embodiments of the present invention are proposed in view of the above problem of the prior art, it is intended to solve existing in the prior art one
The shortcomings that kind or more, at least provide a kind of beneficial selection.
In order to achieve the object of the present invention, embodiments of the present invention provide aspect below.
According to the first aspect of the invention, a kind of photoelectric detection system is provided, which includes:
Silicon photoelectric multiplier is used to detect sample by optical pulse irradiation later from the light pulse of the sample
Signal, and the signal that will test is converted to electric impulse signal；
Signal cooperates with reading circuit, connects the silicon photoelectric multiplier, based on being used to control described in luminescent device generates
The pulse control signal collaboration of light pulse signal generates the gate-control signal of control silicon photoelectric multiplier output, so that silicon photomultiplier transit
Device is in gate photon counting mode, and the electric arteries and veins of silicon photoelectric multiplier output is acquired in the gate duration of the gate-control signal
Rush signal；And
Signal processing unit connects the signal and cooperates with reading circuit, for each in the electric impulse signal based on acquisition
Photoelectricity subevent during the corresponding photoelectron number statistics light pulse of pulse, photoelectron event statistics result meets during light pulse
Average photoelectricity during calculating light pulse according to the probability function of Poisson distribution based on the photoelectron number of statistics when Poisson distribution condition
Subnumber；
The signal processing unit after a sample optical pulse signal measurement, luminescent device close in the case where,
It acquires silicon photoelectric multiplier dark counting event and the equivalent the average photoelectron number of dark counting is calculated based on Poisson distribution；The signal
Processing unit subtracts each other the average photoelectron number equivalent with dark counting of the average photoelectron number during light pulse, obtains the photoelectricity that is averaged only
Subnumber.
Preferably, photoelectron event includes 0 photoelectricity subevent, k photoelectricity subevent and/or k+1 light during the light pulse
Electron event, wherein 0 photo-event is obtained based on the electric impulse signal that amplitude is less than predetermined threshold, k photoelectricity subevent and/or k+
1 photoelectricity subevent is to cross threshold time width or according to k photoelectricity subevent and/or k+1 photoelectron thing based on electric impulse signal
Part output electric pulse amplitude is crossed setting fixed threshold and is obtained, and wherein k is natural number；The dark counting event includes 0 light of dark counting
Electron event.
Preferably, photoelectron event statistics result meets Poisson distribution condition and 0 photoelectricity subevent during light pulse
When number is greater than the predetermined ratio of total photoelectron event statistics number, the signal processing unit is based on following formula and calculates light
The average photoelectron number during pulse:
Wherein, the average photoelectron number during λ is light pulse, photoelectron event statistics number N total during being light pulse, N0
For the statistics number of 0 photoelectricity subevent during light pulse, ln is with natural logrithm operation；And
The signal processing unit calculates the equivalent the average photoelectron number of dark counting based on following formula:
Wherein, λ ' is the equivalent the average photoelectron number of dark counting, and N is the total statistics number of dark counting event, Ndark0It is dark
0 equivalent photoelectron event statistics number is counted, ln is with natural logrithm operation.
Preferably, photoelectron event statistics result meets Poisson distribution condition and 0 photoelectricity subevent during light pulse
When number is not more than the predetermined ratio of total photoelectron event statistics number, the signal processing unit is calculated based on following formula
The average photoelectron number during light pulse:
Wherein, the average photoelectron number during λ is light pulse, Nk、Nk+1Total photoelectricity subevent system respectively during light pulse
The statistics number of k photoelectricity subevent and k+1 photoelectricity subevent in metering number, k are the natural number between 1-15, and ln is with certainly
Right logarithm operation.
Preferably, signal processing unit photoelectron event statistics result during the light pulse does not meet Poisson point
When cloth condition, the method that the electric impulse signal based on acquisition crosses threshold time difference measures and average light during light pulse is calculated
Electron number.
Preferably, the method measurement the average photoelectron number for crossing threshold time difference based on electric impulse signal calculates average light
Electron number includes: according to crossing the time difference average value of threshold value in electric impulse signal and according to calibration data, by tabling look-up or line
The average photoelectron number during property interpolation calculation light pulse.
Preferably, described device further include: luminescent device issues light pulse for the control based on pulse control signal
Signal.Preferably, the luminescent device is light emitting diode or laser diode, and the pulse control signal is pulsed drive letter
Number；Described device further include: pulse driving circuit is used to generate pulse drive signal and drives the luminescent device and connect institute
State signal collaboration reading circuit.Preferably, the pulse driving circuit cooperates with reading circuit by same FPGA with the signal
It realizes；Or the pulse driving circuit, the signal collaboration reading circuit and the signal processing unit are by same FPGA
It realizes.
Preferably, the luminescent device is external pulse laser, and the pulse control signal swashs for the external pulse
The trigger signal of light device.
Preferably, the frequency of the light pulse signal is between 1Hz-1GHz, and the width of the light pulse signal is in 10ps-
1μs；The width of the gate duration is arranged between 10ps-10 μ s.
Preferably, described device further include: sample concentration calculation unit, for the photoelectron that is averaged only according to calculating
Number, determines the concentration of determinand in sample.
According to another aspect of the present invention, a kind of Photoelectric Detection including foregoing photoelectric detection system is additionally provided
System, the photodetector system further include: the luminescent device；The incident light being formed between luminescent device and sample
Road；And it is formed in the emitting light path between sample and silicon photoelectric multiplier.
Preferably, the system also includes: the first filter plate for being placed between the luminescent device and sample and
The second filter plate being placed between sample and silicon photoelectric multiplier, first filter plate and the second filter plate passband
Difference, so that input path and emitting light path are orthogonal.
According to another aspect of the present invention, a kind of photoelectric detecting method is also provided, method includes the following steps: utilizing
Silicon photoelectric multiplier detects sample by optical pulse irradiation later during the light pulse signal of the sample, base
Control silicon photoelectric multiplier is generated in the pulse control signal collaboration for generating the light pulse signal for controlling luminescent device
The gate-control signal of output, so that silicon photoelectric multiplier is in gate photon counting mode, and in the gate of the gate-control signal
The electric impulse signal of interior acquisition silicon photoelectric multiplier output；The corresponding photoelectron of each pulse in electric impulse signal based on acquisition
Photoelectricity subevent during number statistics light pulse, base when photoelectron event statistics result meets Poisson distribution condition during light pulse
The average photoelectron number during the photoelectron number of statistics calculates light pulse according to the probability function of Poisson distribution；Sample light arteries and veins
After rushing signal measurement, in the case where luminescent device is closed, acquires silicon photoelectric multiplier dark counting event and be based on Poisson
Distribution calculates the equivalent the average photoelectron number of dark counting；And by equivalent flat of the average photoelectron number during light pulse and dark counting
Equal photoelectron number subtracts each other, and obtains net the average photoelectron number.
Preferably, the method also includes following steps: according to the net the average photoelectron number of calculating, determining in sample
The concentration of determinand.
Apparatus and method of the present invention uses silicon photoelectric multiplier (SiPM) as optical detector, using the light of triggering gate
Sub-count method detects photoelectron number, and calculates net the average photoelectron number using the principle of Poisson statistics, effectively eliminates silicon
The influence of photoelectric multiplier correlated noise, substantially increases signal-to-noise ratio and detectivity.
In addition, in an embodiment of the present invention, realizing that signal collaboration reads electricity based on field programmable gate array (FPGA)
Road and signal processing circuit (signal processing unit) can significantly reduce statistical error with Quick Acquisition and processing mass data,
Acquisition and processing speed are improved, and may make reading circuit and signal processing circuit volume very little using FPGA, it is very portable.
In short, using apparatus and method of the present invention, due to can be under low light condition for being incident on silicon photomultiplier transit
Photon on device realizes high-acruracy survey, can accuracy measure the concentration of micro determinand more higher.
Detailed description of the invention
Below with reference to the accompanying drawings illustrate embodiments of the invention, the invention will be more easily understood it is above and its
Its objects, features and advantages.Component in attached drawing is not proportional drafting, and is intended merely to show the principle of the present invention.For
Convenient for showing and describe some parts of the invention, corresponding part may be amplified in attached drawing, that is, make it relative in foundation
Other components in the practical exemplary means manufactured of the present invention become much larger.In the accompanying drawings, identical or corresponding technology is special
Sign or component will be indicated using identical or corresponding appended drawing reference.
Fig. 1 shows the schematic diagram that the entire photodetector system of Photoelectric Detection is carried out in an embodiment according to the present invention.
Fig. 2 shows the schematic diagrames of the measurement electric impulse signal width of one embodiment of the invention.
Fig. 3 shows the signal that the entire photodetector system of Photoelectric Detection is carried out in another embodiment according to the present invention
Figure.
Specific embodiment
Illustrate embodiments of the present invention with reference to the accompanying drawings.In the description and accompanying drawings, this is disclosed in detail
The particular implementation of invention, specifying the principle of the present invention can be in a manner of adopted.It should be understood that the present invention is in range
It is not so limited.In the range of the spirit and terms of appended claims, the present invention include many changes, modifications and
It is equivalent.
It should be noted that for purposes of clarity, unrelated to the invention, the common skill in this field is omitted in attached drawing and explanation
The expression and description of component known to art personnel and processing.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It uses in a other embodiment, is combined with the feature in other embodiment, or the feature in substitution other embodiment.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, element, step or component when using herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, element, step or component.
Using the silicon photoelectricity times with high-gain, fast-response speed and excellent single photon resolution capability in the embodiment of the present invention
Increase device SiPM as detector, and is visited using the electric impulse signal exported based on the photon counting method of triggering gate according to SiPM
The photoelectron number of electric pulse is surveyed, and less in incident light subnumber, using the principle of Poisson statistics when light intensity is weaker, passes through Poisson
The probability function of distribution calculates the average photoelectron number, also, the present invention can effectively remove the influence of SiPM dark counting.
Fig. 1 is to be able to carry out Photoelectric Detection in an embodiment according to the present invention, so as to be detected based on Photoelectric Detection
The schematic diagram of the entire photodetector system of testing concentration on fluorescent samples.Such as
Shown in Fig. 1, which may include luminescent device 101, filter plate 102, sample (that is, containing containing determinand
Fluorescent samples) 103, filter plate 104 and photoelectric detection system 105, wherein photoelectric detection system 105 may include SiPM 1051, arteries and veins
Rush driving circuit 1052, signal collaboration reading circuit 1053 and signal processing unit 1054.
Luminescent device 101 and sample 103 by fiber coupling or can be directly coupled to containing filter plate 102 or 104
Optical path.For emitting light pulse, the pulsed light of transmitting filters luminescent device 101 by band pass filter 102, so that bandwidth becomes
It is narrow, the light pulse that wavelength is only λ 1 is formed, wavelength is the optical pulse irradiation of λ 1 on fluorescent samples 103, and specifically, light pulse is shone
The fluorescence that generation wavelength is λ 2 that is excited is easy when being mapped to the fluorescent molecule of fluorescent samples.Another part is from survey fluorescent samples to be measured
The optical wavelength of 103 surface reflections is still λ 1.There may also be a part of light is Raman diffused light.Band pass filter is reached along optical path
104 light is through being filtered.In the embodiment of the present invention, the passband of two pieces of filter plates 102,103 is different, input path and outgoing
Optical path is orthogonal, and λ 1 indicates that fluorescence exciting wavelength, λ 2 indicate wavelength of fluorescence.Only allowing wavelength after the filtering of band pass filter 104 is λ
2 fluorescence passes through, and filters out other light pulses.The photon for being incident on the SiPM 1051 of photoelectric detection system 105 as a result, embodies
Be sample fluorescence signal information.
As shown in Figure 1, the SiPM 1051 in photoelectric detection system 105 is for detecting from this by after optical pulse irradiation
The light pulse signal of sample, and the signal that will test is converted to electric impulse signal.Pulse driving circuit 1052 is for generating
Pulse drive signal drives luminescent device 101.As an example, luminescent device can be semiconductor light-emitting-diode or laser
Diode, pulse driving circuit 1052 can be the pulse modulated circuit based on FPGA, shine for controlling luminescent device, pulse
The pulse width of the pulse drive signal of driving circuit 1052 preferably between 10ps-1 μ s, repetition between 1Hz-1GHz,
Repetition is continuously adjusted as needed in the range of pulse does not stack.The collaboration of 1052 connection signal of pulse driving circuit is read
Circuit 1053, for cooperateing with reading circuit 1053 to cooperate with signal.Pulse driving circuit 1052 cooperates with reading electricity with signal
Road 1053, which cooperates, refers to that pulse driving circuit 1052 exports pulse drive signal, and signal collaboration reading circuit 1053, which synchronizes, to be adopted
Collect the electric impulse signal that SiPM 1051 is exported, so that SiPM is in gate photon counting mode.That is, signal collaboration is read
Circuit 1053 generates the output for controlling SiPM 1051 based on the pulse drive signal collaboration that pulse driving circuit 1052 exports out
Gate-control signal, so that SiPM 1051 is in gate photon counting mode, and the synchronous acquisition in the gate duration of gate-control signal
The electric impulse signal that SiPM 1051 is exported.In an embodiment of the present invention, signal collaboration reading circuit 1053 is based on FPGA
Electronics reading circuit, at this point, gate-control signal is provided by FPGA internal logic circuit, gate duration thresholding width should be according to light arteries and veins
Rushing the actual conditions such as width or fluorescence lifetime, to be adjusted to signal-to-noise ratio best, may be provided between 10ps-10 μ s.Signal in the present invention
It cooperates with reading circuit 1053 that can realize using the Low Voltage Differential Signal LVDS structure of FPGA, realizes that FPGA monolithic is read, structure letter
Single, signal-to-noise ratio is high.In one embodiment of the invention, pulse driving circuit 1052 cooperates with both reading circuits 1053 can be with signal
It is realized on same FPGA, signal cooperates with reading circuit 1053 to trigger with pulse driving circuit using FPGA internal clocking is synchronous.
In an alternative embodiment of the invention, luminescent device 101 can also be other external solids or gas laser, such as picosecond laser
Device, the trigger signal of external laser can cooperate with reading circuit to read in by the signal of fpga chip at this time, and signal collaboration reads electricity
The electric signal of this synchronous acquisition SiPM is routed, and is input to fpga chip simultaneously.Fpga chip internal logic controls signal gate
Time, the data of acquisition are quickly screened and statistical disposition.
1054 connection signal of signal processing unit cooperates with reading circuit 1053, for each in the electric impulse signal based on acquisition
The corresponding photoelectron number of pulse counts photoelectricity subevent, when photoelectron event statistics result meets Poisson distribution condition based on system
The photoelectron number of meter calculates the average photoelectron number according to the probability function of Poisson distribution, and more accords in photoelectron event statistics result
The method that threshold time poor (Time-Over-Threshold, TOT) was adopted when closing Gaussian Profile condition calculates average photoelectron
Number.In one embodiment of the invention, signal processing unit 1054 cooperates with reading circuit 1053 can also be in same FPGA core with signal
On piece is realized, naturally it is also possible to be realized by other processor chips.In the embodiment of the present invention, can by host computer change by
The tools such as the gate of the repetition of the pulse driving circuit of FPGA internal logic circuit control and pulsewidth and signal collaboration reading circuit
Body parameter, for different fluorescent molecule solution since fluorescence lifetime difference needs these parameters of adjustment appropriate, to guarantee most
Good signal-to-noise ratio improves the limit of device measurement dim light.
Signal processing unit 1054 counts 0 photoelectron (photo- in the SiPM electric impulse signal acquired in gate duration
Electron, p.e.) event times N0, k p.e. event times Nk, k+1p.e. event times Nk+1And total statistics number
N calculates the average photoelectron number during luminescent device shines during light pulse based on statistical result.0p.e., k p.e. and k+
1p.e. respectively indicates 0, the response impulse that is exported by SiPM of k and k+1 photoelectron, and k is natural number.SiPM is not to sharing the same light
The light impulse length of subnumber response increases as number of photons increases.Set the threshold value of fixed light pulse amplitude, light pulse width
Value is denoted as 0p.e. event less than threshold value, and k photoelectricity subevent and/or k+1 photoelectricity subevent are to cross threshold based on electric impulse signal
Value time width is obtained according to k photoelectricity subevent and/or k+1 photoelectricity subevent output electric pulse amplitude set fixed threshold.
Statistical counting is carried out respectively to these events, total statistics number is N, uses NSetIndicate preset statistics sum.It is counting
First by the counting variable N of 0p.e., k p.e. and k+1p.e. event when beginning0、NkAnd Nk+1It is initialized as 0 respectively, statistics time
Several counting N are also initialized as 0, then count to the pulse electrical signal of SiPM, and the number of N record statistics works as appearance
0p.e., k p.e. and when k+1p.e. event, corresponding counting variable adds 1, until N is equal to NSetShi Tongji terminates.Based on statistics
Photoelectron event count can calculate the average photoelectron number during light pulse.
At this point, including dark counting in the photoelectron number detected during light pulse, therefore, in order to eliminate the shadow of dark counting
It rings, after a sample optical pulse signal measurement, luminescent device is closed, in gate-control signal after luminescent device closing
Acquisition silicon photoelectric multiplier dark counting event in gate duration (namely dark counting equivalent photoelectricity subevent) and based on Poisson point
Cloth calculates the equivalent the average photoelectron number of dark counting.0 in the equivalent photoelectricity subevent of the n times of signal processing unit statistics at this time
The number of photoelectricity subevent can be denoted as Ndark0。
Signal processing unit is by the average photoelectron number during the light pulse of calculating and the equivalent the average photoelectron number of dark counting
Subtract each other, just obtains the net the average photoelectron number for eliminating dark counting influence.This is arrived, one time signal processing terminates.
Calculating to the average photoelectron number during light pulse and the equivalent the average photoelectron number of dark counting separately below
Calculating is described.
It is less for the incident light subnumber of SiPM detection, the weaker situation of light intensity, the photoelectron statistics point during light pulse
Cloth meets Poisson distribution, and the average photoelectron number during light pulse can be calculated according to the probability function of Poisson distribution.It at this time can be with
In two kinds of situation:
The first situation are as follows: photoelectron event statistics result meets Poisson distribution condition, and 0p.e. thing during light pulse
The number of part is greater than the predetermined ratio of total photoelectron event statistics number, and such as a ten thousandth, signal processing unit can base at this time
The average photoelectron number during following first Poisson distribution probability function formula calculates light pulse:
Wherein, the average photoelectron number during λ is light pulse, photoelectron event statistics number N total during being light pulse, N0
For the statistics number of 0p.e. event during light pulse, ln is with natural logrithm operation.In the present embodiment, the number of 0p.e. event
Ratio a ten thousandth greater than total photoelectron event statistics number is merely illustrative, can also be in the case where guaranteeing detection accuracy
Greater or lesser numerical value.It in this case, is that the average photoelectron number is calculated according to the statistics number of 0 photoelectricity subevent.
In the case of this kind, since Poisson statistics is the number for counting the 0 photoelectricity subevent in gate duration, this event is that do not have
There is correlated noise event to participate in statistics, and is far longer than silicon photoelectricity since equivalent period occur in light pulse cycle time and dark counting
The correlated noise attenuation constant of multiplier, minimum probability can be contributed into photoelectricity subevent, cause to compress 0 photoelectricity subevent ratio
The case where example, so effectively eliminating the influence of SiPM correlated noise.
Second situation are as follows: photoelectron event statistics result meets Poisson distribution condition, and the number of 0p.e. event is little
In the predetermined ratio of total photoelectron event statistics number, such as a ten thousandth, signal processing unit is based on following second pool at this time
Loose distribution probability function formula calculates the average photoelectron number:
Wherein, the average photoelectron number during λ is light pulse, Nk、Nk+1Total photoelectricity subevent respectively during light pulse
The statistics number of k photoelectricity subevent and k+1 photoelectricity subevent in statistics number, k are natural number between 1-15, ln be with
Natural logrithm operation.In the embodiment of the present invention, the value of k can be matched by the host computer communicated to connect with signal processing unit
It sets and modifies, but the present invention is not limited thereto.Certain the method can be extended to based on k photoelectricity subevent and k+n photoelectricity subevent
The average photoelectron number is calculated, n takes the natural number between 1-15.
When the photoelectron number for being incident on SiPM is fewer, formula (1) is more suitable for calculate the average photoelectron number, because
Photoelectricity subevent signal-to-noise ratio approach infinity compared with 0 photoelectricity subevent, statistics 0 photoelectricity subevent have higher sensitivity and
Precision.If incident photoelectron number increases, since 0 photoelectricity subevent becomes less, but still meet Poisson distribution, but by
Minimum in 0 photoelectricity subevent accounting at this time, error is big, so being more suitable for calculating the average photoelectron number using formula (2), although accidentally
Difference can increase because the resolution of k photoelectron and k+1 photoelectricity subevent is poor, but since signal at this time is stronger, still can be with
Guarantee very high signal-to-noise ratio.Selection for k value is contemplated that the accounting of statistical counting, when photoelectricity subevent to be counted accounts for
When being lower than a ten thousandth than total event, k value can be dynamically changed, optimal data are obtained.Due to the number of photons of silicon photoelectric multiplier
Resolution capability can deteriorate with the increase of photoelectron number, so the selection of k value should not be too large, usually select between 1-15.?
In one embodiment of the invention, k value can be set based on experience according to the substance to be detected.In alternative embodiment of the present invention,
All photoelectricity subevents can be counted when counting photoelectricity subevent, k value appropriate is selected based on statistical result.It can be according to light
Electron event accounting is done the real-time optimization of acquisition data or is interacted with host computer, and hardware logic setting or host computer and bottom are passed through
Machine interaction setting or change k value all may be used.
When continuing to increase to Gaussian Profile for light intensity, it cannot be guaranteed to make a reservation for using Poisson distribution probability function
Accuracy rate, the present invention crosses the average value of the time difference of given threshold by statistical signal pulse at this time, crosses threshold time based on this
Poor average value, which is tabled look-up, obtains the average photoelectron number with linear interpolation.
For the statistical result of dark counting, it is as follows that signal processing unit equally uses Poisson distribution probability function that can be based on
Formula calculates the equivalent the average photoelectron number of dark counting:
Wherein, λ ' is the equivalent the average photoelectron number of dark counting, and N is the total statistics number of dark counting event, Ndark0It is dark
0 equivalent photoelectron event statistics number is counted, ln is with natural logrithm operation.
Signal processing unit is by the average photoelectron number during the light pulse of calculating and the equivalent the average photoelectron number of dark counting
Subtract each other, just obtains the net the average photoelectron number for eliminating dark counting influence.
Fig. 2 show the timing diagram of signal processing and photoelectron statistics example, synchronous triggering signal in the embodiment of the present invention
(or drive pulse signal) is screened for realizing the gate of light pulse, and the width of gate-control signal is set gate duration thresholding
Width.Using Poisson statistics method or adopted threshold time difference method measure the average photoelectron number.Believed by gate
Number, so that the photon for being incident on SiPM is converted into electric impulse signal and is adopted in a synchronous relatively narrow time threshold
Collection and measurement, can be effectively removed the influence of the dark counting of SiPM.
In the embodiment of the present invention, the data of signal processing unit processes can be uploaded to host computer, further by host computer
Carry out data statistic analysis.
Since the concentration of the average photoelectron number and fluorescent molecule is in a linear relationship, by configuring a series of concentration gradients
Fluorescent molecule solution the concentration of solution fluorescence molecule can be measured to both sides relation calibration.Therefore, in another implementation of the present invention
In example, photoelectric detection system may also include sample concentration calculation unit, and concentration calculation unit is used for according to the net flat of calculating
Equal photoelectron number determines the concentration of determinand in sample.The concentration calculation unit can together with signal processing unit
It is realized in FPGA, can also realize, can also be realized in host computer in individual processor.
Photoncounting methods according to the present invention using Poisson statistics and were based on threshold time difference and table look-up and linearly insert
Value counts to determine that photon is flat.Wherein, the number of photons that low light signals are utilized meets the Poisson statistics regularity of distribution, in the feelings of dim light
The average photoelectron number of each signal pulse is obtained using Poisson statistics principle under condition, effectively eliminates silicon photomultiplier transit
The influence of the correlated noise of device, measurement accuracy is higher, and FPGA can be easy to use to acquire and handle data, simplifies signal
Reading and processing circuit, can acquire millions of groups or more of signal pulse, a large amount of statistical numbers of Quick Acquisition in 1 second
According to statistical error can be reduced.Therefore, Photoncounting methods and photoelectric detection system according to the present invention can be detected by light arteries and veins
Impulse is sent out and the low light signals of generation, such as bioluminescence, material surface reflected light, Raman scattering and laser radar.
Fig. 3 shows the concentration measurement system of testing concentration on the detection reflected sample of another embodiment according to the present invention
Schematic diagram.As shown in figure 3, concentration measurement system includes luminescent device 101, optical fiber 202, sample 203, Photoelectric Detection dress
105 are set, wherein photoelectric detection system 105 is identical as Fig. 1, omits the detailed description herein.
With system shown in Figure 1 the difference lies in that sample is reflected sample in the present embodiment, luminescent device 101 is produced
Raw light pulse is irradiated on the surface of sample 103 by optical fiber 102, material of the optical fiber 102 apart from sample 103
Surface is close, obtains tens Dao several hundred microns hot spot, and the reflected light of material surface is incident on SiPM 1051, is converted into
Electric impulse signal.The incident photon being incident on SiPM is the optical pulse irradiation of the generation of luminescent device 101 on sample 103
And the optical signal reflected.
An example according to the present invention, above-mentioned concentration measurement system can not include optical fiber 202, luminescent device 101
The light pulse of generation can direct irradiation on sample 203.
The number for the photon average counter that photoelectric detection system 105 measures has reacted material surface reflectivity on sample
Size, therefore, which can be used for measuring the surface reflectivity of gold-marking immunity chromatographic test paper, and surface reflection
Rate and antigen or antibody concentration are in a linear relationship, and by the calibration to the two linear relationship, the average counter based on photon can be with
The concentration of antigen or antibody is determined, so as to the concentration of quantitative measurment antigen or antibody.
In an embodiment of the present invention, luminescent device 101 can be light emitting diode or laser diode, light emitting diode
Or laser diode is driven by pulse driving circuit 1052.Luminescent device 101 is also possible to external laser, such as picosecond laser
Device, external laser triggered by trigger signal it is luminous, at this time be not necessarily to pulse driving circuit 1052.Signal cooperates with reading circuit
1053 can read in the trigger signal of external pulse laser, to cooperate with the gate-control signal for the output for generating control SiPM, and it is synchronous
Acquire the electric impulse signal that SiPM 1051 is exported.
An embodiment according to the present invention, pulse driver 1052, signal collaboration reading circuit 1053 and signal processing list
Member 1054 can be realized on same FPGA (field programmable gate array) chip, at this point, synchronously being touched by FPGA internal clocking
It sends out pulse driver and signal cooperates with reading circuit, so that signal collaboration reading circuit synchronously acquires the electric pulse of SiPM conversion
Signal.Preferably, which is communicated by serial ports with host computer, carries out data exchange.It is adopted using the signal based on FPGA
Collect processing technique, with Quick Acquisition and enough data can be handled, significantly reduce statistical error, improve acquisition and processing speed
Degree.Also, detection device can be made simpler using FPGA, volume is smaller, light portable.It, can in the embodiment of the present invention
The repetition of the pulse driving circuit controlled by host computer change by FPGA internal logic circuit and pulsewidth and signal collaboration are read
The design parameters such as gate value of circuit out.
In the embodiment of the present invention using SiPM 1051 be used as detector, due to SiPM have high-gain, fast-response speed and
Therefore, there is extremely weak incident light in the characteristics of excellent single photon resolution capability high sensitivity, in addition, the present invention uses
Triggering gate photon counting method obtains the average photoelectron number, and the fast fast reading based on field programmable gate array (FPGA) is utilized
Out and signal processing circuit, data are handled by statistical method, there is high signal-to-noise ratio and detectivity.The present invention
It is particularly suitable for the measurement of dim light, to measure the micro- of week fluorescent that sample is exported or sample material surface
Weak reflected light, and then determine the concentration of micro determinand.
Correspondingly, the present invention also provides the photo-detection method realized in one based on Electro-Optical Sensor Set, this method packets
Include following steps:
(1) sample is being detected by optical pulse irradiation later from the process of the light pulse signal of sample using SiPM
In, it is generated by signal collaboration reading circuit based on the pulse control signal collaboration for being used to control luminescent device generation light pulse signal
The gate-control signal of the output of SiPM is controlled, so that SiPM is in gate photon counting mode, and in the gate duration of gate-control signal
The electric impulse signal of interior acquisition SiPM output.
In the step, it is related to two kinds of situations, a kind of situation is that luminaire is driven by pulse driving circuit, i.e., is driven by pulse
Dynamic circuit drives luminescent device issues pulsed light, synchronously trigger pulse driving circuit and signal can cooperate with reading circuit at this time.
Another situation is that luminescent device is external pulse laser, the trigger signal of external pulse laser can be cooperateed with by signal to be read
Circuit (preferably fpga chip form) is read in, and thus fpga chip may make reading circuit synchronous acquisition silicon photoelectric multiplier
Electric signal.
(2) photoelectron thing during the corresponding photoelectron number statistics light pulse of each pulse in the electric impulse signal based on acquisition
Part, based on the photoelectron number of statistics according to Poisson when photoelectron event statistics result meets Poisson distribution condition during light pulse
The probability function of distribution calculates the average photoelectron number during light pulse.
After (3) sample optical pulse signal measurements, in the case where luminescent device is closed, SiPM dark counting is acquired
Event simultaneously calculates the equivalent the average photoelectron number of dark counting based on Poisson distribution；And
(4) the average photoelectron number equivalent with dark counting of the average photoelectron number during light pulse is subtracted each other, is obtained only average
Photoelectron number.
In one example, step (2)-(4) can be executed by signal processing unit.Preferably, signal processing unit is in light
Based on probability function when electron event statistical result meets Poisson distribution condition by the photoelectron number of statistics according to Poisson distribution
Calculate the average photoelectron number and the equivalent the average photoelectron number of dark counting during light pulse, and photoelectron event statistics result more
The method that threshold time difference was adopted when meeting Gaussian Profile condition calculates the average photoelectron number during light pulse.It will be during light pulse
The average photoelectron number the average photoelectron number equivalent with dark counting subtracts each other, and obtains net the average photoelectron number.Further, according to meter
The net the average photoelectron number calculated, it may be determined that the concentration of determinand in sample.
In short, the present invention is directed to optical signal detection, propose that the photon counting method based on triggering gate measures incident photoelectricity
The method and apparatus of subnumber.The device combine triggering gate photon counting method high s/n ratio the advantages of, using with high-gain,
The SiPM of fast-response speed and excellent single photon resolution capability is as detector, and is based on field programmable gate array (FPGA)
Quickly reading and signal processing circuit, still have high detectivity for the weak light to single photon level.Compared to tradition
Weak light detection device based on photomultiplier tube, which does not need high bias, small in size, is hardly damaged and at low cost.It compares
In the measurement method of general photon counting or integral charge amount based on SiPM, which utilizes the principle of Poisson statistics, has
Effect eliminates the influence of SiPM correlated noise, and simplifies reading circuit.And it is more for incident light subnumber, light intensity is larger, system
The case where score cloth meets Gaussian Profile, the method for using threshold time difference obtains average intensity.Using the letter based on FPGA
Number acquisition and process can significantly reduce statistical error with Quick Acquisition and processing mass data, improve acquisition and processing speed
Degree.The device and method can be used for detecting the optical signal for being excited by pulsed light and being generated, as bioluminescence, material surface reflect
The fields such as light, Raman scattering, laser radar and flash detection.
Those of ordinary skill in the art may be aware that being described in conjunction with embodiment disclosed herein each exemplary
Unit and method and step, can be realized with the combination of hardware, software or the two.These functions are actually with hardware or soft
Part mode executes, specific application and design constraint depending on technical solution.Professional technician can be to each spy
Fixed application uses different methods to achieve the described function, but this realizes it is not considered that exceeding model of the invention
It encloses.
Software can be placed in random access memory (RAM), memory, read-only memory (ROM), electrically programmable ROM, electric erasable
Any other form of depositing well known in programming ROM, register, hard disk, moveable magnetic disc, CD-ROM or technical field
In storage media.
Embodiments described above is all exemplary, and is not limitation of the present invention, those skilled in the art are according to this
The spirit of invention, it is contemplated that various variants and modifications, these variants and modifications are also within the scope of the invention.
Claims (20)
1. a kind of photoelectric detection system, which is characterized in that the device includes:
Silicon photoelectric multiplier is used to detect sample and was believed later from the light pulse of the sample by optical pulse irradiation
Number, and the signal that will test is converted to electric impulse signal；
Signal cooperates with reading circuit, connects the silicon photoelectric multiplier, generates the smooth arteries and veins based on being used to control luminescent device
The pulse control signal collaboration for rushing signal generates the gate-control signal of control silicon photoelectric multiplier output, so that at silicon photoelectric multiplier
In gate photon counting mode, and the electric pulse that silicon photoelectric multiplier exports is acquired in the gate duration of the gate-control signal and is believed
Number；And
Signal processing unit connects the signal and cooperates with reading circuit, for pulse each in the electric impulse signal based on acquisition
Photoelectricity subevent during corresponding photoelectron number statistics light pulse, photoelectron event statistics result meets Poisson during light pulse
When distribution occasion based on the photoelectron number of statistics according to Poisson distribution probability function calculate light pulse during the average photoelectron number；
The signal processing unit is acquired after a sample optical pulse signal measurement, in the case that luminescent device is closed
Silicon photoelectric multiplier dark counting event simultaneously calculates the equivalent the average photoelectron number of dark counting based on Poisson distribution；The signal processing
Unit subtracts each other the average photoelectron number equivalent with dark counting of the average photoelectron number during light pulse, obtains the photoelectron that is averaged only
Number.
2. the apparatus according to claim 1, it is characterised in that；
Photoelectron event includes 0 photoelectricity subevent, k photoelectricity subevent and/or k+1 photoelectricity subevent during the light pulse,
In 0 photo-event based on amplitude be less than predetermined threshold electric impulse signal obtain, k photoelectricity subevent and/or k+1 photoelectricity subevent
It is that threshold time width or according to k photoelectricity subevent and/or k+1 photoelectricity subevent output electric pulse is crossed based on electric impulse signal
Amplitude is crossed setting fixed threshold and is obtained, and wherein k is natural number；
The dark counting event includes 0 equivalent photoelectricity subevent of dark counting.
3. the apparatus of claim 2, it is characterised in that:
Photoelectron event statistics result meets Poisson distribution condition during light pulse and the number of 0 photoelectricity subevent is greater than always
When the predetermined ratio of photoelectron event statistics number, the signal processing unit is based on average during following formula calculates light pulse
Photoelectron number:
Wherein, the average photoelectron number during λ is light pulse, photoelectron event statistics number N total during being light pulse, N0For light
The statistics number of 0 photoelectricity subevent during pulse, ln are with natural logrithm operation；And
The signal processing unit calculates the equivalent the average photoelectron number of dark counting based on following formula:
Wherein, λ ' is the equivalent the average photoelectron number of dark counting, and N is the total statistics number of dark counting event, Ndark0For dark counting
0 equivalent photoelectron event statistics number, ln are with natural logrithm operation.
4. the apparatus of claim 2, which is characterized in that photoelectron event statistics result meets pool during light pulse
When loose distribution occasion and the number of 0 photoelectricity subevent are not more than the predetermined ratio of total photoelectron event statistics number, the letter
Number processing unit is based on following formula and calculates the average photoelectron number during light pulse:
Wherein, the average photoelectron number during λ is light pulse, Nk、Nk+1Total photoelectron event statistics respectively during light pulse
The statistics number of k photoelectricity subevent and k+1 photoelectricity subevent in number, k are the natural number between 1-15, and ln is with naturally right
Number operation；And
The signal processing unit calculates the equivalent the average photoelectron number of dark counting based on following formula:
Wherein, λ ' is the equivalent the average photoelectron number of dark counting, and N is the total statistics number of dark counting event, Ndark0For dark counting
0 equivalent photoelectron event statistics number, ln are with natural logrithm operation.
5. the apparatus according to claim 1, which is characterized in that signal processing unit photoelectricity during the light pulse
When subevent statistical result does not meet Poisson distribution condition, the electric impulse signal based on acquisition crosses the method measurement of threshold time difference
And the average photoelectron number during light pulse is calculated；It is described by electric impulse signal cross threshold time difference method measurement and based on
The average photoelectron number includes: during calculation obtains light pulse
According to crossing the time difference average value of threshold value in electric impulse signal and according to calibration data, by tabling look-up or linear interpolation meter
The average photoelectron number during calculation light pulse.
6. the apparatus according to claim 1, it is characterised in that: the luminescent device is two pole of light emitting diode or laser
Pipe, the pulse control signal are pulse drive signal；
Described device further include: pulse driving circuit is used to generate pulse drive signal and drives the luminescent device and connect
The signal cooperates with reading circuit.
7. device according to claim 6, it is characterised in that: the pulse driving circuit cooperates with reading electricity with the signal
Same FPGA is routed to realize；Or
The pulse driving circuit, signal collaboration reading circuit are realized with the signal processing unit by same FPGA.
8. the apparatus according to claim 1, it is characterised in that: the luminescent device is external pulse laser, the arteries and veins
Punching control signal is the trigger signal of the external pulse laser.
9. the apparatus according to claim 1, which is characterized in that described device further include:
Sample concentration calculation unit determines determinand in sample for the net the average photoelectron number according to calculating
Concentration.
10. the apparatus according to claim 1, it is characterised in that:
The frequency of the light pulse signal is between 1Hz-1GHz, and the width of the light pulse signal is in 10ps-1 μ s；
The width of the gate duration is arranged between 10ps-10 μ s.
11. a kind of includes the photodetector system of the photoelectric detection system as described in any one of claim 1-10, the light
Electricity detecting system further include:
The luminescent device；
The input path being formed between luminescent device and sample；And
The emitting light path being formed between sample and silicon photoelectric multiplier.
12. system according to claim 11, which is characterized in that the system also includes:
The first filter plate for being placed between the luminescent device and sample and it is placed in sample and silicon photoelectric multiplier
Between the second filter plate, first filter plate and the second filter plate passband are different, so that input path and emergent light
Road is orthogonal.
13. a kind of photoelectric detecting method, which is characterized in that method includes the following steps:
Sample is being detected by optical pulse irradiation later from the light pulse signal of the sample using silicon photoelectric multiplier
During, control silicon light is generated based on the pulse control signal collaboration for generating the light pulse signal for controlling luminescent device
The gate-control signal of the output of electric multiplier so that silicon photoelectric multiplier is in gate photon counting mode, and is believed in the gate
Number gate duration in acquisition silicon photoelectric multiplier output electric impulse signal；
Photoelectricity subevent during the corresponding photoelectron number statistics light pulse of each pulse in electric impulse signal based on acquisition, in Guang Mai
Based on the photoelectron number of statistics according to the general of Poisson distribution when photoelectron event statistics result meets Poisson distribution condition during punching
Rate function calculates the average photoelectron number during light pulse；
After sample optical pulse signal measurement, in the case where luminescent device is closed, the dark count of silicon photoelectric multiplier is acquired
Number event simultaneously calculates the equivalent the average photoelectron number of dark counting based on Poisson distribution；And
The average photoelectron number equivalent with dark counting of the average photoelectron number during light pulse is subtracted each other, the photoelectron that is averaged only is obtained
Number.
14. according to the method for claim 13, it is characterised in that:
Photoelectron event includes 0 photoelectricity subevent, k photoelectricity subevent and/or k+1 photoelectricity subevent during the light pulse,
In 0 photo-event based on amplitude be less than predetermined threshold electric impulse signal obtain, k photoelectricity subevent and/or k+1 photoelectricity subevent
It is that threshold time width or according to k photoelectricity subevent and/or k+1 photoelectricity subevent output electric pulse is crossed based on electric impulse signal
Amplitude is crossed setting fixed threshold and is obtained, and wherein k is natural number；
The dark counting event includes 0 equivalent photoelectricity subevent of dark counting.
15. according to the method for claim 14, it is characterised in that:
Photoelectron event statistics result meets Poisson distribution condition during light pulse and the number of 0 photoelectricity subevent is greater than always
When the predetermined ratio of photoelectron event statistics number, based on the average photoelectron number during the calculating light pulse of following formula:
Wherein, the average photoelectron number during λ is light pulse, photoelectron event statistics number N total during being light pulse, N0For light
The statistics number of 0 photoelectricity subevent during pulse, ln are with natural logrithm operation；And
The equivalent the average photoelectron number of dark counting is calculated based on following formula:
Wherein, λ ' is the equivalent the average photoelectron number of dark counting, and N is the total statistics number of dark counting event, Ndark0For dark counting
0 equivalent photoelectron event statistics number, ln are with natural logrithm operation.
16. according to the method for claim 14, which is characterized in that photoelectron event statistics result meets during light pulse
When the number of Poisson distribution condition and 0 photoelectricity subevent is not more than the predetermined ratio of total photoelectron event statistics number, it is based on
Following formula calculates the average photoelectron number during light pulse:
Wherein, the average photoelectron number during λ is light pulse, Nk、Nk+1Total photoelectron event statistics are total respectively during light pulse
The statistics number of k photoelectricity subevent and k+1 photoelectricity subevent in number, k are the natural number between 1-15, and ln is with naturally right
Number operation；And
The equivalent the average photoelectron number of dark counting is calculated based on following formula:
Wherein, λ ' is the equivalent the average photoelectron number of dark counting, and N is the total statistics number of dark counting event, Ndark0For dark counting
0 equivalent photoelectron event statistics number, ln are with natural logrithm operation.
17. according to the method for claim 13, it is characterised in that:
When photoelectron event statistics result does not meet Poisson distribution condition during the light pulse, the electric impulse signal based on acquisition
The method for crossing threshold time difference measures and the average photoelectron number during light pulse is calculated；It is described that threshold is crossed based on electric impulse signal
The method measurement the average photoelectron number of value time difference calculates the average photoelectron number and includes:
According to crossing the time difference average value of threshold value in electric impulse signal and according to calibration data, by tabling look-up or linear interpolation meter
Calculate the average photoelectron number.
18. according to the method for claim 13, which is characterized in that the luminescent device is two pole of light emitting diode or laser
Pipe, the pulse control signal are light emitting device pulse driving signal；Or
The luminescent device is external pulse laser, and the pulse control signal is that the triggering of the external pulse laser is believed
Number.
19. according to the method for claim 13, it is characterised in that:
The frequency of the light pulse signal is between 1Hz-1GHz, and the width of the light pulse signal is in 10ps-1 μ s；The door
The width of control time is arranged between 10ps-10 μ s.
20. according to the method for claim 13, which is characterized in that the method also includes following steps: according to calculating
Net the average photoelectron number determines the concentration of determinand in sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811018215.0A CN109164141B (en) | 2018-09-03 | 2018-09-03 | Photoelectric detection device, system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811018215.0A CN109164141B (en) | 2018-09-03 | 2018-09-03 | Photoelectric detection device, system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109164141A true CN109164141A (en) | 2019-01-08 |
| CN109164141B CN109164141B (en) | 2020-02-18 |
Family
ID=64893698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811018215.0A Active CN109164141B (en) | 2018-09-03 | 2018-09-03 | Photoelectric detection device, system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109164141B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825514A (en) * | 2019-11-21 | 2021-05-21 | 默升科技集团有限公司 | Multi-functional level detector for SerDes |
| CN113671526A (en) * | 2021-06-29 | 2021-11-19 | 桂林理工大学 | Novel laser radar detection time sequence control system |
| CN114114288A (en) * | 2020-08-27 | 2022-03-01 | 上海禾赛科技有限公司 | Measuring circuit for laser radar, measuring method thereof and laser radar |
| CN117074663A (en) * | 2023-10-12 | 2023-11-17 | 乐福思健康产业股份公司 | Detection method of colloidal gold immunochromatography analyzer |
| WO2024046264A1 (en) * | 2022-08-30 | 2024-03-07 | 中国计量科学研究院 | Measurement apparatus and method based on photon number resolving detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103207024A (en) * | 2013-02-27 | 2013-07-17 | 南京邮电大学 | Analog signal reading method for single photon avalanche diode detector |
| CN104388307A (en) * | 2014-11-24 | 2015-03-04 | 中国科学院苏州生物医学工程技术研究所 | Liquid drop type sample fluorescence detection system and method |
| CN107356855A (en) * | 2017-07-20 | 2017-11-17 | 中国科学技术大学 | A kind of test device and method of single photon photoelectric device |
-
2018
- 2018-09-03 CN CN201811018215.0A patent/CN109164141B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103207024A (en) * | 2013-02-27 | 2013-07-17 | 南京邮电大学 | Analog signal reading method for single photon avalanche diode detector |
| CN104388307A (en) * | 2014-11-24 | 2015-03-04 | 中国科学院苏州生物医学工程技术研究所 | Liquid drop type sample fluorescence detection system and method |
| CN107356855A (en) * | 2017-07-20 | 2017-11-17 | 中国科学技术大学 | A kind of test device and method of single photon photoelectric device |
Non-Patent Citations (2)
| Title |
|---|
| A.N. OTTE 等: "A measurement of the photon detection efficiency of silicon photomultipliers", 《NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A》 * |
| LUKASZ MIK 等: "Silicon Photomultiplier as Fluorescence Light Detector", 《18TH INTERNATIONAL CONFERENCE "MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS"》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825514A (en) * | 2019-11-21 | 2021-05-21 | 默升科技集团有限公司 | Multi-functional level detector for SerDes |
| CN114114288A (en) * | 2020-08-27 | 2022-03-01 | 上海禾赛科技有限公司 | Measuring circuit for laser radar, measuring method thereof and laser radar |
| CN114114288B (en) * | 2020-08-27 | 2022-11-18 | 上海禾赛科技有限公司 | Measuring circuit for laser radar, measuring method thereof and laser radar |
| CN113671526A (en) * | 2021-06-29 | 2021-11-19 | 桂林理工大学 | Novel laser radar detection time sequence control system |
| WO2024046264A1 (en) * | 2022-08-30 | 2024-03-07 | 中国计量科学研究院 | Measurement apparatus and method based on photon number resolving detector |
| CN117074663A (en) * | 2023-10-12 | 2023-11-17 | 乐福思健康产业股份公司 | Detection method of colloidal gold immunochromatography analyzer |
| CN117074663B (en) * | 2023-10-12 | 2024-02-06 | 乐福思健康产业股份公司 | Detection method of colloidal gold immunochromatography analyzer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109164141B (en) | 2020-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109164141A (en) | Photoelectric detection system, system and method | |
| US6137584A (en) | Method and device for determining predetermined properties of target particles of a sample medium | |
| CN107202903A (en) | Sample analyser and its method of sample analysis | |
| KR101149880B1 (en) | Methods for controlling one or more parameters of a flow cytometer type measurement system | |
| Wahl et al. | Dead-time optimized time-correlated photon counting instrument with synchronized, independent timing channels | |
| US20120236291A1 (en) | Differentiation of flow cytometry pulses and applications | |
| CN109085599A (en) | The distance-measuring device compensated with SPAD array and range walk | |
| US20030048433A1 (en) | Cytometer signal processing system and method | |
| CN110121643A (en) | Systems for optical inspection, flow cytometer systems and its application method for flow cytometer | |
| CN102869982A (en) | Optical analysis device, optical analysis method, and computer program for optical analysis | |
| JPH04337446A (en) | Method and device for measuring fine grain and constant quantity method | |
| CN102590159A (en) | Transient fluorescence lifetime measurement method and measurement system based on single photon counting | |
| CN107356855A (en) | A kind of test device and method of single photon photoelectric device | |
| US20110180726A1 (en) | System and method for digital parallel frequency fluorometry | |
| Giesecke et al. | Determination of background, signal‐to‐noise, and dynamic range of a flow cytometer: A novel practical method for instrument characterization and standardization | |
| WO2016094654A1 (en) | Self-triggered flow cytometer | |
| US3897155A (en) | Atomic fluorescence spectrometer | |
| Yang et al. | The design of rapid turbidity measurement system based on single photon detection techniques | |
| US6759247B2 (en) | Method and apparatus for detecting radiation | |
| CN106092967A (en) | The detection method of a kind of bio-molecular interaction and device | |
| CN108387504A (en) | Particle collector is closed in cohesion | |
| CN108865650A (en) | Microfluidic droplet scatters light and fluorescence counting chip | |
| JPH03163388A (en) | Device for simultaneous measurement of corpuscular ray and quantum ray of a number of test samples | |
| CN204439543U (en) | The main component content measuring system of a kind of emulsion | |
| WO2022084858A1 (en) | Single-photon imaging system with reconfigurable controller for rapid switching between imaging modes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231130 Address after: Room 437, Aviation Industry Support Center, No.1 Baohang Road, Tianjin Pilot Free Trade Zone (Airport Economic Zone) (Comprehensive Bonded Zone), Binhai New Area, Tianjin, 300303 (under the custody of Tianjin Jiayu Business Secretary Co., Ltd., No. 115) Patentee after: CGN Jingshi Optoelectronic Technology (Tianjin) Co.,Ltd. Address before: 100875 19 xinjiekouwai street, Xicheng District, Beijing Patentee before: BEIJING NORMAL University |