CN109160813A - A kind of thermistor material and preparation method thereof - Google Patents

A kind of thermistor material and preparation method thereof Download PDF

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Publication number
CN109160813A
CN109160813A CN201811099595.5A CN201811099595A CN109160813A CN 109160813 A CN109160813 A CN 109160813A CN 201811099595 A CN201811099595 A CN 201811099595A CN 109160813 A CN109160813 A CN 109160813A
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parts
srco
uniformly mixed
batio
thermistor material
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董建军
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Huaying Vocational Education And Training Center
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  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

The invention discloses a kind of thermistor materials and preparation method thereof, are grouped as by the group of following parts by weight: BaTiO360-70 parts；SrCO325-30 parts；TiO25-8 parts；SiO28-12 parts；Cr2O36-10 parts；SrCO320-30 parts；CeO28-12 parts；2-5 parts of graphene, greatly enhance resistance material high-temperature stability, reliability；And once sintered molding is adopted, process is greatlied simplify, facilitates and is mass produced.

Description

A kind of thermistor material and preparation method thereof
Technical field
The present invention relates to thermistor material technical fields, more particularly, to a kind of thermistor material and its preparation side Method.
Background technique
Positive temperature coefficient (PTC) thermistor has the resistance value when temperature is lower lower, and temperature rises to certain journey The characteristic that resistance steeply rises when spending sometimes reaches 3~4 or more the orders of magnitude；Therefore PTC passes through self-heating after being powered Temperature rises and resistance is caused to increase, and limits electric current in circuit, has good security performance.With the hair of national economy Exhibition, positive temperature coefficient (PTC) thermistor element are widely used in household electrical appliances, communication, electronic equipment, electric component, temperature sensing With control, heating etc. fields.Due to convertible frequency air-conditioner, low pressure instrument and communication apparatus use increasingly frequency in social production life Numerous, people are also higher and higher to its reliability requirement.Low-resistivity positive temperature coefficient temperature-sensitive electricity general in such equipment at present Resistance mostly uses conventional method: in BaTiO3In directly add SiO2As glass phase reduce resistivity, the disadvantage is that sintering temperature compared with Height, reliability is lower, can only be used below in 30V, does not adapt to requirement more and more under current demand；And it is existing Some polmer PTC elements fusing points only have 130 DEG C or so, limit its scope of application.
Summary of the invention
The present invention provides a kind of thermistor materials and preparation method thereof, low to solve existing thermistor reliability The problem of.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is summarized as follows:
A kind of thermistor material is grouped as by the group of following parts by weight:
BaTiO360-70 parts；
SrCO325-30 parts；
TiO25-8 parts；
SiO28-12 parts；
Cr2O36-10 parts；
SrCO320-30 parts；
2-5 parts of graphene；
CeO28-12 parts.
Further, a kind of preparation method of thermistor material the following steps are included:
1) according to each raw material weight proportioning of soup processed, SrCO is weighed3、TiO2、SiO2、Cr2O3、SrCO3、CeO2And it graphene and mixes Uniformly；
2) it is added in Mn (NO3) 2 solution in the uniformly mixed raw material described in step 1), then presses raw material: agate ball: Deionized water=1: 1.5: 2 ball milling 8-10h in the ball mill obtain slurry；
3) BaTiO is weighed by weight ratio3, and BaTiO is added in the slurry described in step 2)3, stirring to mixing is It is even, poly-vinyl alcohol solution is then added and binder is uniformly mixed and obtains binding paste；
4) binding paste described in step 3) is granulated, and dry-pressing formed obtained embryo piece；
5) embryo piece described in step 4) is subjected to dumping processing, is then sintered 50min at 1100 DEG C -1200 DEG C, obtains Resistance material.
Further, the binder is PVA, and usage amount is the 1%-3% of total inventory.
Further, the Mn (NO3)2The mass percent concentration of solution is 50%, Mn (NO3)2The weight that solution uses Measuring part is 4-6 parts.
Further, the dry-pressing formed pressure is 140MPa-180MPa.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
It compares tradition and uses SiO merely2The PTC ceramics sintering temperature of glass phase is done at 1250~1400 DEG C, PTC of the invention Ceramic thermistor material can reduce 100 DEG C or more, manufacture craft is simple, greatly reduces in 1100 DEG C of -1200 DEG C of sintering Piezoresistive material cost, and the element being harmful to the human body without Pb etc., meet energy-saving and environment-friendly requirement, have practicability And application prospect；Material obtained has that high temperature resistant, high pressure resistant, aftercurrent is small, power is low, uses that safe and reliable property is high, the longevity The features such as long is ordered, is had a vast market foreground.
Specific embodiment
Invention is further described in detail With reference to embodiment.Embodiments of the present invention include but not It is limited to the following example.
Embodiment 1
A kind of thermistor material weighs corresponding raw material: BaTiO by following weight proportion360 parts；SrCO325 parts； TiO25 parts；SiO28 parts；Cr2O36 parts；SrCO320 parts；CeO28 parts；2 parts of graphene.
Preparation: 1) by SrCO3、TiO2、SiO2、Cr2O3、SrCO3、CeO2And graphene is uniformly mixed；
2) Mn (NO that 4 parts of mass percent concentrations are 50% is added in the resulting uniformly mixed raw material of step 1)3)2 In solution, then press raw material: agate ball: deionized water=1: 1.5: 2 ball milling 8h in the ball mill obtain slurry；
3) BaTiO is added in the resulting slurry of step 2)3, stir to being uniformly mixed, poly-vinyl alcohol solution be then added And account for total inventory 1% PVA be uniformly mixed obtain binding paste；
4) the resulting binding paste of step 3) is granulated, and the dry-pressing formed obtained embryo piece under 140MPa pressure；
5) the resulting embryo piece of step 4) is subjected to dumping processing, is then sintered 50min at 1100 DEG C, obtains resistance material Material.
Embodiment 2
A kind of thermistor material weighs corresponding raw material: BaTiO by following weight proportion365 parts；SrCO327 parts； TiO27 parts；SiO210 parts；Cr2O39 parts；SrCO328 parts；CeO211；3 parts of graphene.
Preparation: 1) by SrCO3、TiO2、SiO2、Cr2O3、SrCO3And CeO2It is uniformly mixed；
2) Mn (NO that 5 parts of mass percent concentrations are 50% is added in the resulting uniformly mixed raw material of step 1)3)2 In solution, then press raw material: agate ball: deionized water=1: 1.5: 2 ball milling 9h in the ball mill obtain slurry；
3) BaTiO is added in the resulting slurry of step 2)3, stir to being uniformly mixed, poly-vinyl alcohol solution be then added And account for total inventory 2% PVA be uniformly mixed obtain binding paste；
4) the resulting binding paste of step 3) is granulated, and the dry-pressing formed obtained embryo piece under 150MPa pressure；
5) the resulting embryo piece of step 4) is subjected to dumping processing, is then sintered 50min at 1150 DEG C, obtains resistance material Material.
Embodiment 3
A kind of thermistor material weighs corresponding raw material: BaTiO by following weight proportion370 parts；SrCO330 parts； TiO28 parts；SiO212 parts；Cr2O310 parts；SrCO330 parts；CeO212 parts；5 parts of graphene.
Preparation: 1) by SrCO3、TiO2、SiO2、Cr2O3、SrCO3、CeO2And graphene is uniformly mixed；
2) Mn (NO that 6 parts of mass percent concentrations are 50% is added in the resulting uniformly mixed raw material of step 1)3)2 In solution, then press raw material: agate ball: deionized water=1: 1.5: 2 ball milling 10h in the ball mill obtain slurry；
3) BaTiO is added in the resulting slurry of step 2)3, stir to being uniformly mixed, poly-vinyl alcohol solution be then added And account for total inventory 3% PVA be uniformly mixed obtain binding paste；
4) the resulting binding paste of step 3) is granulated, and the dry-pressing formed obtained embryo piece under 180MPa pressure；
5) the resulting embryo piece of step 4) is subjected to dumping processing, is then sintered 50min at 1200 DEG C, obtains resistance material Material.
It is as described above the embodiment of the present invention.The present invention is not limited to the above-described embodiments, anyone should learn that The structure change made under the inspiration of the present invention, the technical schemes that are same or similar to the present invention each fall within this Within the protection scope of invention.

Claims (5)

1. a kind of thermistor material, which is characterized in that be grouped as by the group of following parts by weight:
BaTiO360-70 parts；
SrCO325-30 parts；
TiO25-8 parts；
SiO28-12 parts；
Cr2O36-10 parts；
SrCO320-30 parts；
CeO28-12 parts；
2-5 parts of graphene.
2. a kind of preparation method of ceramic electrical resistance body thermistor material as described in claim 1, which is characterized in that including Following steps:
1) according to each raw material weight proportioning of soup processed, SrCO is weighed3、TiO2、SiO2、Cr2O3、SrCO3、CeO2And it graphene and is uniformly mixed；
2) Mn (NO is added in the uniformly mixed raw material described in step 1)3)2In solution, then by raw material: agate ball: go from Sub- water=1: 1.5: 2 ball milling 8-10h in the ball mill obtain slurry；
3) BaTiO is weighed by weight ratio3, and BaTiO is added in the slurry described in step 2)3, stirring is to being uniformly mixed, so Poly-vinyl alcohol solution is added afterwards and binder is uniformly mixed and obtains binding paste；
4) binding paste described in step 3) is granulated, and dry-pressing formed obtained embryo piece；
5) embryo piece described in step 4) is subjected to dumping processing, is then sintered 50min at 1100 DEG C -1200 DEG C, obtains resistance Material.
3. the preparation method of ceramic electrical resistance body thermistor material as claimed in claim 2, which is characterized in that the bonding Agent is PVA, and usage amount is the 1%-3% of total inventory.
4. ceramic electrical resistance body thermistor material as claimed in claim 2, which is characterized in that the Mn (NO3)2Solution Mass percent concentration is 50%, Mn (NO3)2The parts by weight that solution uses are 4-6 parts.
5. ceramic electrical resistance body thermistor material as claimed in claim 2, which is characterized in that the dry-pressing formed pressure is 140MPa-180MPa。
CN201811099595.5A 2018-09-20 2018-09-20 A kind of thermistor material and preparation method thereof Withdrawn CN109160813A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113621273A (en) * 2021-10-13 2021-11-09 广东简一(集团)陶瓷有限公司 Self-temperature-limiting conductive ink, preparation method and heating ceramic

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212102A (en) * 1982-06-03 1983-12-09 株式会社デンソー Method of producing positive temperature coefficient porcelain semiconductor
CN107915482A (en) * 2017-11-18 2018-04-17 四川启兴电子有限公司 Ceramic electrical resistance body thermistor material and preparation method thereof
CN108383521A (en) * 2018-05-16 2018-08-10 奥普家居股份有限公司 A kind of BaTiO3The preparation method of potsherd

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212102A (en) * 1982-06-03 1983-12-09 株式会社デンソー Method of producing positive temperature coefficient porcelain semiconductor
CN107915482A (en) * 2017-11-18 2018-04-17 四川启兴电子有限公司 Ceramic electrical resistance body thermistor material and preparation method thereof
CN108383521A (en) * 2018-05-16 2018-08-10 奥普家居股份有限公司 A kind of BaTiO3The preparation method of potsherd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113621273A (en) * 2021-10-13 2021-11-09 广东简一(集团)陶瓷有限公司 Self-temperature-limiting conductive ink, preparation method and heating ceramic

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