CN109148653A - 6 inches of graphical sapphire substrates and preparation method and LED epitaxial wafer - Google Patents
6 inches of graphical sapphire substrates and preparation method and LED epitaxial wafer Download PDFInfo
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- CN109148653A CN109148653A CN201811002327.7A CN201811002327A CN109148653A CN 109148653 A CN109148653 A CN 109148653A CN 201811002327 A CN201811002327 A CN 201811002327A CN 109148653 A CN109148653 A CN 109148653A
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- 239000000758 substrate Substances 0.000 title claims abstract description 125
- 239000010980 sapphire Substances 0.000 title claims abstract description 114
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 114
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 230000011218 segmentation Effects 0.000 claims abstract description 12
- 238000001312 dry etching Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 8
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 26
- 230000008569 process Effects 0.000 abstract description 18
- 238000000407 epitaxy Methods 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 description 16
- 238000000605 extraction Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 5
- 230000001186 cumulative effect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000012797 qualification Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 241001062009 Indigofera Species 0.000 description 3
- 239000010437 gem Substances 0.000 description 3
- 229910001751 gemstone Inorganic materials 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This application provides a kind of 6 inches of graphical sapphire substrates and preparation methods and LED epitaxial wafer, are related to LED technology field, and method includes providing Sapphire Substrate；A layer photoresist is coated on the surface of Sapphire Substrate；The Sapphire Substrate for being coated with photoresist is exposed, is developed, forms patterned mask layer, patterned mask layer includes the multiple column photoresists separated by segmentation road；Sapphire Substrate with patterned mask layer is sent into etching machine bench reaction cavity and carries out dry etching, pattern structure is formed in sapphire substrate surface, form patterned sapphire substrate, pattern structure includes multiple U-shaped grooves and multiple triangle cone bulge-structures, triangle cone bulge-structure is divided into multiple independent segment units by U-shaped groove, in each segment unit in respectively include multiple triangle cone bulge-structures.So be conducive to improve epitaxy quality and process rate.
Description
Technical field
The invention belongs to LED technology fields, and in particular to graphical sapphire substrate and preparation method and LED epitaxial wafer.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting, small in size, power consumption at present
Low long service life high brightness, environmental protection, it is sturdy and durable the advantages that by the majority of consumers approve, the scale of domestic production LED
Gradually expanding；Demand in the market to LED luminance and light efficiency is growing day by day, and client is concerned with LED more power saving, and brightness is more
Height, light efficiency are more preferable, this is just that more stringent requirements are proposed for LED epitaxial growth；How to grow better epitaxial wafer and is increasingly subject to weight
Depending on because of the raising of epitaxial layer crystal quality, the available promotion of the performance of LED component is the luminous efficiency of LED, the service life, anti-ageing
Change ability, antistatic effect, stability can be promoted with the promotion of epitaxial layer crystal quality.
Sapphire Substrate is that semiconductor lighting industry uses most wide substrate material, and Sapphire Substrate pattern technology is
The method for improving semiconductor lighting devices light extraction efficiency, improving epitaxy crystalline quality of mainstream at present.With industry manufacturing technology
Be constantly progressive, the promotion of scale manufacturing cost constantly reduces objective requirement this two big power, the size rule of Sapphire Substrate
Lattice are gradually transitioned into 4,6 inches by 2 inches of early stage.Currently, the specification mainstream of patterned substrate large-scale production is 4 inches,
Part production capacity is 6 inches.Small size turns in the technology development process of large scale processing procedure, and the epitaxial growth of high quality need to capture
Key problem in technology point.
Realized that the patterned sapphire substrate solution of large-scale production, micro-structure illustrated figure to be single figure at present
Case, the effect that these underlay pattern processing schemes have played good in 2-4 inches of LED process nodes, but with substrate
The technology difficulty of the increase of size, epitaxial growth increases, and has higher requirement to equipment, to material.Therefore, it is served as a contrast for 6 inches
It is very necessary to design a kind of new underlay pattern scheme for the epitaxial growth at bottom.
Summary of the invention
In view of this, being helped the present invention provides 6 inches of graphical sapphire substrates and preparation method and LED epitaxial wafer
In improving stress window of 6 inch substrates in crystal growth and process, improves warpage amplitude of variation, can be improved epitaxy
Quality and process rate.
In a first aspect, the present invention provides a kind of preparation methods of 6 inches of graphical sapphire substrates, which is characterized in that
Include:
Sapphire Substrate is provided；
Sapphire Substrate surface coat a layer photoresist, the photoresist with a thickness of 1 μm≤D0≤3 μm；
The Sapphire Substrate for being coated with the photoresist is exposed, is developed, patterned mask layer, the pattern are formed
Changing mask layer includes the multiple column photoresists separated by segmentation road；
Sapphire Substrate with patterned mask layer is sent into etching machine bench reaction cavity, uses boron chloride, trifluoro
Methane and oxygen carry out dry etching to the patterned mask layer, form pattern structure in the sapphire substrate surface,
Patterned sapphire substrate is formed, the pattern structure includes multiple U-shaped grooves and multiple triangle cone bulge-structures, described
The triangle cone bulge-structure is divided into multiple independent segment units, middle difference in each segment unit by U-shaped groove
Including multiple triangle cone bulge-structures；Wherein, the upper radio-frequency power in the reaction cavity be 1000W≤W1≤
1700W, lower radio-frequency power are 300W≤W2≤800W, and reaction cavity pressure is 1MT≤P≤4MT, and gas flow is 20%≤K
≤ 90%.
Optionally, in which: be sent into etching machine bench reaction cavity in the Sapphire Substrate that will have patterned mask layer, use
Boron chloride, fluoroform and oxygen carry out the patterned mask layer after dry etching, further includes: by the patterning
Sapphire Substrate is cleaned.
Optionally, in which: the diameter of the column photoresist is 1.8 μm≤D1≤2.3 μm；It is described segmentation road width be
0.5μm≤D2≤3μm。
Optionally, in which: the depth of the U-shaped groove is 1.5 μm≤D3≤3 μm, and the width of the U-shaped groove is 2 μm
≤D4≤5μm。
Optionally, in which: the section maximum width of the triangle cone bulge-structure is 2.5 μm≤D5≤2.9 μm, described
The height of triangle cone bulge-structure is 1.5 μm≤D6≤1.9 μm.
Second aspect, the present invention also provides a kind of systems by 6 inches of graphical sapphire substrates provided herein
6 inches of graphical sapphire substrates of Preparation Method preparation, which is characterized in that the graphical sapphire substrate includes:
Sapphire Substrate；
Positioned at the pattern structure of the sapphire substrate surface, the pattern structure includes multiple U-shaped grooves and more
The triangle cone bulge-structure is divided into multiple independent segment units by a triangle cone bulge-structure, the U-shaped groove,
Multiple triangle cone bulge-structures are respectively included in each segment unit；The patterned structures are by being located at
The patterned mask layer of the sapphire substrate surface carries out what dry etching obtained, and the patterned mask layer includes by dividing
Multiple column photoresists that road separates.
Optionally, in which: the depth of the U-shaped groove is 1.5 μm≤D3≤3 μm, and the width of the U-shaped groove is 2 μm
≤D4≤5μm。
Optionally, in which: the section maximum width of the triangle cone bulge-structure is 2.5 μm≤D5≤2.9 μm, described
The height of triangle cone bulge-structure is 1.5 μm≤D6≤1.9 μm.
The third aspect, the application also provide a kind of LED epitaxial wafer, including 6 inches of graphical sapphire substrates, the figure
Change Sapphire Substrate is 6 inches of graphical sapphire substrates provided herein.
Compared with prior art, 6 inches of graphical sapphire substrates described herein and preparation method and LED extension
Piece achieving the following effects:
In 6 inches of graphical sapphire substrates provided herein and preparation method and LED epitaxial wafer, served as a contrast in sapphire
The surface at bottom forms pattern structure, which includes multiple U-shaped grooves and multiple triangle cone bulge-structures, U-shaped
Triangle cone bulge-structure is divided into multiple independent segment units by groove.In subsequent epitaxial manufacture process, due to U-shaped groove
Presence so that being grown in independent segment unit for GaN layer is completed, the GaN film of neighbor map module unit is not interconnected, such as
This is conducive to eliminate Sapphire Substrate to the cumulative stress effect of GaN film, significantly increases the control of epitaxial film material stress
Window, to be conducive to improve the qualification rate of GaN epitaxy material；Meanwhile 6 inches of graphic sapphires lining provided herein
In bottom, the pattern structure constituted due to being provided with U-shaped groove and triangle cone bulge-structure, so that subsequent GaN epitaxy process
In played selective area growth advantage, therefore also help and reduce bending deformation amplitude of the GaN epitaxy piece in entire growth course,
To be conducive to improve LED film wavelength uniformity, especially have to large-size sapphire substrate GaN-based LED wavelength uniformity bright
Aobvious benefit.
Certainly, implementing any of the products of the present invention specific needs while must not reach all the above technical effect.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present invention, constitutes a part of the invention, this hair
Bright illustrative embodiments and their description are used to explain the present invention, and are not constituted improper limitations of the present invention.In the accompanying drawings:
Fig. 1 show a kind of stream of the preparation method of 6 inches of graphical sapphire substrates provided by the embodiment of the present application
Cheng Tu；
Fig. 2 show a kind of structural schematic diagram of Sapphire Substrate provided by the embodiment of the present application；
Fig. 3 show a kind of structural schematic diagram coated after photoresist on a sapphire substrate；
Fig. 4 show a kind of structural schematic diagram for forming patterned mask layer on a sapphire substrate；
Fig. 5 show a kind of structural schematic diagram for forming pattern structure on a sapphire substrate；
Fig. 6 show a kind of top view of patterned sapphire substrate provided by the embodiment of the present application；
Fig. 7 show the another kind of the preparation method of 6 inches of graphical sapphire substrates provided by the embodiment of the present application
Flow chart；
Fig. 8 show a kind of structural schematic diagram of LED epitaxial wafer provided by the embodiment of the present application.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.In addition, " coupling " word includes any direct and indirect electric property coupling herein
Means.Therefore, if it is described herein that a first device is coupled to a second device, then representing the first device can directly electrical coupling
It is connected to the second device, or the second device indirectly electrically coupled through other devices or coupling means.Specification
Subsequent descriptions be implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application,
It is not intended to limit the scope of the present application.The protection scope of the application is as defined by the appended claims.
In addition, there is no the structures that component disclosed in claims and method and step are defined in embodiment for this specification
Part and method and step.In particular, the size for the structure member recorded in embodiments, material, shape, its structural order and neighbour
It connects sequence and manufacturing method etc. to limit as long as no specific, is just only used as and illustrates example, rather than the scope of the present invention is limited
Due to this.The size and location relationship of structure member shown in the drawings is amplified and is shown to clearly be illustrated.
Sapphire Substrate is that semiconductor lighting industry uses most wide substrate material, and Sapphire Substrate pattern technology is
The method for improving semiconductor lighting devices light extraction efficiency, improving epitaxy crystalline quality of mainstream at present.With industry manufacturing technology
Be constantly progressive, the promotion of scale manufacturing cost constantly reduces objective requirement this two big power, the size rule of Sapphire Substrate
Lattice are gradually transitioned into 4,6 inches by 2 inches of early stage.Currently, the specification mainstream of patterned substrate large-scale production is 4 inches,
Part production capacity is 6 inches.Small size turns in the technology development process of large scale processing procedure, and the epitaxial growth of high quality need to capture
Key problem in technology point.
In view of this, being helped the present invention provides 6 inches of graphical sapphire substrates and preparation method and LED epitaxial wafer
In improving stress window of 6 inch substrates in crystal growth and process, improves warpage amplitude of variation, can be improved epitaxy
Quality and process rate.
It is specifically described below in conjunction with the drawings and specific embodiments.
Fig. 1 show a kind of stream of the preparation method of 6 inches of graphical sapphire substrates provided by the embodiment of the present application
Cheng Tu, referring to Figure 1, the embodiment of the present application provide a kind of preparation method of 6 inches of graphical sapphire substrates 10, comprising:
Step 101 provides Sapphire Substrate 10, refers to Fig. 2, and Fig. 2 show the treasured of indigo plant provided by the embodiment of the present application
A kind of structural schematic diagram at stone lining bottom 10；
Step 102, Sapphire Substrate 10 surface coat a layer photoresist 20, photoresist 20 with a thickness of 1 μm≤D0
≤ 3 μm, Fig. 3 is referred to, Fig. 3 show a kind of structural schematic diagram coated after photoresist 20 in Sapphire Substrate 10；
Step 103 is exposed the Sapphire Substrate 10 for being coated with photoresist 20, develops, and forms patterned mask layer
30, patterned mask layer 30 includes the multiple column photoresists 31 separated by segmentation road 32, refers to Fig. 4, and Fig. 4 is shown blue precious
A kind of structural schematic diagram of patterned mask layer 30 is formed on stone lining bottom 10；
Sapphire Substrate 10 with patterned mask layer 30 is sent into etching machine bench reaction cavity by step 104, uses three
Boron chloride, fluoroform and oxygen carry out dry etching to patterned mask layer 30, form pattern on 10 surface of Sapphire Substrate
Change structure 40, form graphical sapphire substrate 100, pattern structure 40 includes multiple U-shaped grooves 42 and multiple triangle cones
Triangle cone bulge-structure 41 is divided into multiple independent segment units 50, each segment by bulge-structure 41, U-shaped groove 42
Multiple triangle cone bulge-structures 41 are respectively included in unit 50, refer to Fig. 5 and Fig. 6, Fig. 5 is shown in sapphire
A kind of structural schematic diagram of pattern structure 40 is formed on substrate 10, Fig. 6 show graphical provided by the embodiment of the present application
A kind of top view of Sapphire Substrate 100, Fig. 5 are the AA ' sectional view of graphical sapphire substrate in Fig. 6；Wherein, reaction cavity
In upper radio-frequency power be 1000W≤W1≤1700W, lower radio-frequency power be 300W≤W2≤800W, reaction cavity pressure be 1MT
≤ P≤4MT, gas flow are 20%≤K≤90%.
Specifically ,-Fig. 6 referring to Figure 1, the preparation method of 6 cun of change Sapphire Substrates 10 provided by the embodiment of the present application
In, step 101- step 103, being coated with a layer thickness on clean, smooth 10 surface of Sapphire Substrate is 1 μm≤D1≤3 μm
Then photoresist 20 is exposed it using exposure machine, is developed using developing machine, complete yellow light process, obtain pattern
Change mask layer 30, refers to Fig. 3, which includes the multiple column photoresists 31 separated by segmentation road 32.Especially
It is in above-mentioned steps 104, to be carved using dry etch process to the patterned mask layer 30 being located in Sapphire Substrate 10
Erosion, forms pattern structure 40 in Sapphire Substrate 10, which includes multiple U-shaped grooves 42 and multiple triangles
Cone cell bulge-structure 41 uses a photoetching, make U-shaped groove 42 in substrate surface, which is divided into substrate
Multiple independent segment units 50, patterning regimes of the surface with serial pyrometric cone protrusion in each segment unit 50.?
In subsequent epitaxial manufacture process, due to the presence of U-shaped groove 42, so that being grown in independent segment unit 50 for GaN layer is completed,
The GaN film of neighbor map module unit 50 does not interconnect, and is so conducive to eliminate Sapphire Substrate 10 to the cumulative stress of GaN film
Effect significantly increases the window of epitaxial film material stress control, to be conducive to improve the qualification rate of GaN epitaxy material；Together
When, in 6 inches of graphical sapphire substrates 10 provided herein, due to being provided with U-shaped groove 42 and triangle cone protrusion
The pattern structure 40 that structure 41 is constituted so that having played selective area growth advantage during subsequent GaN epitaxy, therefore also helps
Bending deformation amplitude of the GaN epitaxy piece in entire growth course is reduced, thus be conducive to improve LED film wavelength uniformity,
Especially there is apparent benefit to large-size sapphire substrate 10GaN base LED wavelength uniformity.
In addition, during dry etching, reaction condition is arranged in above-mentioned steps 104 are as follows: upper in reaction cavity
Radio-frequency power be 1000W≤W1≤1700W, lower radio-frequency power be 300W≤W2≤800W, reaction cavity pressure be 1MT≤P≤
4MT, gas flow are 20%≤K≤90%, are so capable of forming more obvious U-shaped groove 42 and triangle cone bulge-structure
41, it is more advantageous to form independent segment unit 50, so that it is thin to GaN to be more advantageous to Sapphire Substrate 10 in elimination epitaxial manufacture process
The cumulative stress effect of film.
Optionally, Fig. 7 is referred to, Fig. 7 show 6 inches of graphical sapphire substrates 10 provided by the embodiment of the present application
Preparation method another flow chart, will have patterned mask layer 30 Sapphire Substrate 10 be sent into etching machine bench reaction
Cavity further includes step after carrying out dry etching to the patterned mask layer 30 using boron chloride, fluoroform and oxygen
Rapid 105, it may be assumed that clean the graphical sapphire substrate 100.
Specifically, in above-mentioned steps 105, graphical sapphire substrate 100 is cleaned, specifically, will be graphical blue
Jewel substrate 100 is successively surface-treated it using SPM (sulfuric acid solution), APM (ammonia spirit) mixed liquor, removal residual
Object and molecule keep substrate surface clean.
Optionally, Fig. 4 is referred to, 103 is formed by patterned mask layer 30 through the above steps, column photoresist 31
Diameter is 1.8 μm≤D1≤2.3 μm；The width for dividing road 32 is 0.5 μm≤D2≤3 μm.Specifically, the embodiment of the present application is by column
Shape photoresist 31 and when being designed and sized to above-mentioned size of road 32 of segmentation, are conducive to carry out technology controlling and process, Jin Ershi in etching process
The size Control of existing subsequent pattern structure.
It should be noted that the segmentation road 32 in embodiment illustrated in fig. 4 is the parallelogram side that width is 0.5 μm -3 μm
Frame, in addition to such mode, the segmentation road 32 in the embodiment of the present application can also be presented as other structures, the application to this without
It is specific to limit.
Optionally, Fig. 5 is referred to, 104 is formed by pattern structure 40 through the above steps, the depth of U-shaped groove 42
Degree is 1.5 μm≤D3≤3 μm, and the width of U-shaped groove 42 is 2 μm≤D4≤5 μm.Specifically, since U-shaped groove 42 needs one
The effect of fixed width degree competence exertion, therefore, 4 >=2 μm of width D whens, can play buffer action；But the width of U-shaped groove 42 is got over
Width, luminous efficiency is poorer, therefore its width design is D4≤5 μm by the application, impacts it to luminous efficiency.Together
Reason, since U-shaped groove 42 needs the effect of certain depth competence exertion, 3 >=1.5 μm of width D whens, can play isolation
Effect；But the depth of U-shaped groove 42 is bigger, luminous efficiency is poorer, therefore its depth design is D4≤3 μm by the application, is made
It does not impact luminous efficiency.
Optionally, Fig. 5 is referred to, 104 is formed by pattern structure 40 through the above steps, triangle cone protrusion knot
The section maximum width of structure 41 is 2.5 μm≤D5≤2.9 μm, and the height of triangle cone bulge-structure 41 is 1.5 μm≤D6≤1.9
μm.Specifically, the height of the application implementation intermediate cam cone structure 41 is higher, and light extraction efficiency is higher, but height increases to centainly
Light extraction efficiency will not continue to be promoted when degree, therefore its height is designed as 1.5 μm≤D6≤1.9 μm, be conducive to promote LED's
Light extraction efficiency.The width that the application implements intermediate cam cone structure 41 is bigger, and light extraction efficiency is higher, but its cross-sectional width increases to
When to a certain degree, section gap is smaller, and epitaxial growth difficulty increases, quality decline, therefore its section maximum width is designed as
When 2.5 μm≤D5≤2.9 μm, the light extraction efficiency for promoting LED is not only improved, and will not influence the quality of LED.By triangle cone knot
The cross-sectional width of structure 41 is suitably done greatly, and height is appropriate to be reduced, and so that the ramp slope of triangle cone structure 41 is slowed down, can also be lifted out
Light efficiency reduces voltage, but the too small light extraction efficiency that is unfavorable for of height is promoted, therefore the application intermediate cam cone cell bulge-structure 41
Section maximum width is 2.5 μm≤D5≤2.9 μm, and the height of triangle cone bulge-structure 41 is 1.5 μm≤D6≤1.9 μm.
Based on the same inventive concept, the application also provides a kind of 6 inches of graphical indigo plant provided through the foregoing embodiment
6 inches of graphical sapphire substrates 10 of the preparation method preparation of jewel substrate 10, refer to Fig. 5, graphic sapphire lining
Bottom 10 includes:
Sapphire Substrate 10；
Pattern structure 40 positioned at 10 surface of Sapphire Substrate, pattern structure 40 include multiple U-shaped grooves 42 and more
Triangle cone bulge-structure 41 is divided into multiple independent segment units 50 by a triangle cone bulge-structure 41, U-shaped groove 42,
Multiple triangle cone bulge-structures 41 are respectively included in each segment unit 50；Patterned structures are by blue precious to being located at
The patterned mask layer 30 on 10 surface of stone lining bottom carries out what dry etching obtained, patterned mask layer 30 include by segmentation road 32 every
The multiple column photoresists 31 opened.
Specifically, Fig. 5 is referred to, in 6 inches sapphire substrates 10 provided by the embodiment of the present application, in Sapphire Substrate
10 surfaces are provided with pattern structure 40, which includes multiple U-shaped grooves 42 and multiple triangle cone protrusion knots
Triangle cone bulge-structure 41 is divided into multiple independent segment units 50 by structure 41, U-shaped groove 42.In subsequent epitaxial manufacture process
In, due to the presence of U-shaped groove 42, so that being grown in independent segment unit 50 for GaN layer is completed, neighbor map module unit 50
GaN film do not interconnect, be so conducive to eliminate Sapphire Substrate 10 to the cumulative stress effect of GaN film, significantly increase
The window of epitaxial film material stress control, to be conducive to improve the qualification rate of GaN epitaxy material；Meanwhile the application is mentioned
In the 6 inches of graphical sapphire substrates 10 supplied, due to being provided with the figure of U-shaped groove 42 and the composition of triangle cone bulge-structure 41
Case structure 40 so that having played selective area growth advantage during subsequent GaN epitaxy, therefore also helps reduction GaN epitaxy piece
Bending deformation amplitude in entire growth course, to be conducive to improve LED film wavelength uniformity, especially to large scale indigo plant
Jewel substrate 10GaN base LED wavelength uniformity has apparent benefit.
Optionally, the depth of U-shaped groove 42 is 1.5 μm≤D3≤3 μm, and the width of U-shaped groove 42 is 2 μm≤D4≤5 μm.
Specifically, since U-shaped groove 42 needs the effect of one fixed width competence exertion, 4 >=2 μm of width D whens can play every
From effect；But the width of U-shaped groove 42 is wider, luminous efficiency is poorer, therefore its width design is D4≤5 μm by the application,
Impact it to luminous efficiency.Similarly, since U-shaped groove 42 needs the effect of certain depth competence exertion,
Buffer action can be played at 3 >=1.5 μm of width D；But the depth of U-shaped groove 42 is bigger, luminous efficiency is poorer, therefore this Shen
It is please D4≤3 μm by its depth design, impacts it to luminous efficiency.
Optionally, the section maximum width of triangle cone bulge-structure 41 is 2.5 μm≤D5≤2.9 μm, and triangle cone is convex
The height for playing structure is 1.5 μm≤D6≤1.9 μm.Specifically, specifically, the application implements the height of intermediate cam cone structure 41
Higher, light extraction efficiency is higher, but light extraction efficiency will not continue to be promoted when height increases to a certain extent, therefore its height be designed
For 1.5 μm≤D6≤1.9 μm, be conducive to the light extraction efficiency for promoting LED.The width that the application implements intermediate cam cone structure 41 is got over
Greatly, light extraction efficiency is higher, but its cross-sectional width increase to a certain extent when, section gap is smaller, epitaxial growth difficulty increase, product
Matter decline, therefore when its section maximum width is designed as 2.5 μm≤D5≤2.9 μm, not only improve promote LED go out light efficiency
Rate, and will not influence the quality of LED.The cross-sectional width of triangle cone structure 41 is suitably done greatly, height is appropriate to be reduced, and triangle is made
The ramp slope of cone structure 41 slows down, can also improving extraction efficiency, reduce voltage, but the too small light extraction efficiency that is unfavorable for of height mentions
It rises, therefore the section maximum width of the application intermediate cam cone cell bulge-structure 41 is 2.5 μm≤D5≤2.9 μm, triangle cone is convex
The height for playing structure 41 is 1.5 μm≤D6≤1.9 μm.
Based on the same inventive concept, the embodiment of the present application also provides a kind of LED epitaxial wafer, and Fig. 8 show the application implementation
A kind of structural schematic diagram of LED epitaxial wafer provided by example, the LED epitaxial wafer include 6 inches of graphical sapphire substrates 10, figure
Shape Sapphire Substrate 10 is any graphical sapphire substrate 10 of claim 6 to 9.It should be noted that the application
The embodiment of LED epitaxial wafer provided by embodiment can refer to 6 inches of graphic sapphire linings provided by the embodiment of the present application
The embodiment at bottom 10, overlaps will not be repeated.
As can be seen from the above embodiments beneficial effect existing for the application is:
In graphical sapphire substrate and preparation method and LED epitaxial wafer provided herein, provided herein 6
In inch graphical sapphire substrate and preparation method and LED epitaxial wafer, pattern structure is formed on the surface of Sapphire Substrate,
The pattern structure includes multiple U-shaped grooves and multiple triangle cone bulge-structures, and U-shaped groove divides triangle cone bulge-structure
It is segmented into multiple independent segment units.In subsequent epitaxial manufacture process, due to the presence of U-shaped groove, so that GaN layer is grown in
It is completed in independent segment unit, the GaN film of neighbor map module unit does not interconnect, and is so conducive to eliminate Sapphire Substrate pair
The cumulative stress effect of GaN film significantly increases the window of epitaxial film material stress control, to be conducive to improve outside GaN
Prolong the qualification rate of material；Meanwhile in 6 inches of graphical sapphire substrates provided herein, due to be provided with U-shaped groove and
The pattern structure that triangle cone bulge-structure is constituted, so that having played selective area growth advantage during subsequent GaN epitaxy, therefore
The bending deformation amplitude for reducing GaN epitaxy piece in entire growth course is also helped, to be conducive to improve LED film wavelength
Uniformity especially has apparent benefit to large-size sapphire substrate GaN-based LED wavelength uniformity.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (9)
1. a kind of preparation method of 6 inches of graphical sapphire substrates characterized by comprising
Sapphire Substrate is provided；
Sapphire Substrate surface coat a layer photoresist, the photoresist with a thickness of 1 μm≤D0≤3 μm；
The Sapphire Substrate for being coated with the photoresist is exposed, is developed, patterned mask layer is formed, the patterning is covered
Film layer includes the multiple column photoresists separated by segmentation road；
Sapphire Substrate with patterned mask layer is sent into etching machine bench reaction cavity, uses boron chloride, fluoroform
Dry etching is carried out to the patterned mask layer with oxygen, pattern structure is formed in the sapphire substrate surface, is formed
Patterned sapphire substrate, the pattern structure include multiple U-shaped grooves and multiple triangle cone bulge-structures, described U-shaped
The triangle cone bulge-structure is divided into multiple independent segment units by groove, in each segment unit in respectively include
Multiple triangle cone bulge-structures；Wherein, the upper radio-frequency power in the reaction cavity is 1000W≤W1≤1700W, under
Radio-frequency power is 300W≤W2≤800W, and reaction cavity pressure is 1MT≤P≤4MT, and gas flow is 20%≤K≤90%.
2. the preparation method of 6 inches of graphical sapphire substrates according to claim 1, which is characterized in that will have
The Sapphire Substrate of patterned mask layer is sent into etching machine bench reaction cavity, using boron chloride, fluoroform and oxygen to institute
State patterned mask layer carry out dry etching after, further includes: the patterned sapphire substrate is cleaned.
3. the preparation method of 6 inches of graphical sapphire substrates according to claim 1, which is characterized in that the column
The diameter of photoresist is 1.8 μm≤D1≤2.3 μm；The width in the segmentation road is 0.5 μm≤D2≤3 μm.
4. the preparation method of 6 inches of graphical sapphire substrates according to claim 1, which is characterized in that described U-shaped recessed
The depth of slot is 1.5 μm≤D3≤3 μm, and the width of the U-shaped groove is 2 μm≤D4≤5 μm.
5. the preparation method of 6 inches of graphical sapphire substrates according to claim 1, which is characterized in that the triangle
The section maximum width of cone cell bulge-structure is 2.5 μm≤D5≤2.9 μm, and the height of the triangle cone bulge-structure is 1.5 μ
m≤D6≤1.9μm。
6. the 6 of a kind of preparation method preparation of any 6 inches of graphical sapphire substrates by claim 1 to 5
Inch graphical sapphire substrate, which is characterized in that the graphical sapphire substrate includes:
Sapphire Substrate；
Positioned at the pattern structure of the sapphire substrate surface, the pattern structure includes multiple U-shaped grooves and multiple three
The triangle cone bulge-structure is divided into multiple independent segment units, each institute by pyramidal bulge-structure, the U-shaped groove
It states in segment unit and respectively includes multiple triangle cone bulge-structures；The patterned structures are by described to being located at
The patterned mask layer of sapphire substrate surface carries out what dry etching obtained, the patterned mask layer include by segmentation road every
The multiple column photoresists opened.
7. 6 inches of graphical sapphire substrates according to claim 6, which is characterized in that the depth of the U-shaped groove is
1.5 μm≤D3≤3 μm, the width of the U-shaped groove is 2 μm≤D4≤5 μm.
8. 6 inches of graphical sapphire substrates according to claim 6, which is characterized in that the triangle cone protrusion knot
The section maximum width of structure is 2.5 μm≤D5≤2.9 μm, and the height of the triangle cone bulge-structure is 1.5 μm≤D6≤1.9
μm。
9. a kind of LED epitaxial wafer, which is characterized in that including 6 inches of graphical sapphire substrates, the graphical sapphire substrate
For any 6 inches of graphical sapphire substrates of claim 6 to 8.
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