CN109148503A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
- Publication number
- CN109148503A CN109148503A CN201811027045.2A CN201811027045A CN109148503A CN 109148503 A CN109148503 A CN 109148503A CN 201811027045 A CN201811027045 A CN 201811027045A CN 109148503 A CN109148503 A CN 109148503A
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- film
- imaging sensor
- semiconductor substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 138
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000306 component Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010051986 Pneumatosis Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, the forming method includes: offer semiconductor substrate；MOS device is formed on the semiconductor substrate；Barrier layer is formed, the barrier layer covers the surface of the MOS device and semiconductor substrate, and the barrier layer includes C film, SP in the C film3Linkage content is higher than default content threshold value；Metal interconnecting layer is formed in the barrier layer surface.The transmission speed and service life of imaging sensor can be improved in the present invention program.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is the core component of picture pick-up device, realizes image taking function by converting optical signals into electric signal
Energy.By taking cmos image sensor (CMOS Image Sensors, CIS) device as an example, due to its tool
There is the advantages of low-power consumption and high s/n ratio, therefore is widely applied in various fields.
In the prior art, Metal-oxide-semicondutor (Metal-Oxide- is formed on a semiconductor substrate
Semiconductor, MOS) after device, generally use silicon nitride (SiN or Si3N4) and silica (SiO2) be used as from right
Quasi- silicide barrier layer (Self-Align Silicide Block or Salicide block, SAB), to semiconductor substrate
And MOS device is protected, the influence generated when being subsequently formed metal interconnecting layer to reduce, especially in pixel region, energy
Enough generations that white point (White Pixel) is efficiently reduced by protection.
However, being easily reduced the transmission speed and service life of imaging sensor using silicon nitride.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, and image sensing can be improved
The transmission speed and service life of device.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, comprising: provide
Semiconductor substrate；MOS device is formed on the semiconductor substrate；Barrier layer is formed, the barrier layer covers the MOS device
And the surface of semiconductor substrate, the barrier layer include C film, SP in the C film3Linkage content is higher than default content threshold
Value；Metal interconnecting layer is formed in the barrier layer surface.
Optionally, the barrier layer further include: silicon oxide layer, the silicon oxide layer cover the MOS device and partly lead
Body substrate, the C film cover the silicon oxide layer.
Optionally, the material of the C film is selected from: diamond and SP3The nothing that linkage content is higher than default content threshold value is fixed
Shape carbon.
Optionally, the C film is formed using chemical vapor deposition process；Wherein, the chemical vapor deposition process
Technological parameter includes following one or more: deposition gases include: hydrocarbon gas and helium；Depositing temperature is 50 DEG C to 700
℃；Deposition pressure is less than or equal to 10Torr；Deposition thickness is 5nm to 200nm.
Optionally, forming metal interconnecting layer in the barrier layer surface includes: to form interlayer on the surface on the barrier layer
Dielectric layer；The interlayer dielectric layer and the barrier layer are performed etching, to form groove, the groove exposes the MOS
The contact zone of device；Metal material is filled in the groove.
Optionally, when performing etching to the C film in the barrier layer, etching parameters include following one or more: being carved
Losing gas includes: O2And argon gas；Etching temperature is 20 DEG C to 500 DEG C；It etches pressure and is less than or equal to 10Torr；Etch thicknesses are
5nm to 200nm.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: semiconductor substrate；MOS
Device is located in the semiconductor substrate；Barrier layer covers the surface of the MOS device and semiconductor substrate, the blocking
Layer includes C film, SP in the C film3Linkage content is higher than default content threshold value；Metal interconnecting layer is located at the barrier layer
Surface.
Optionally, the barrier layer further include: silicon oxide layer covers the MOS device and semiconductor substrate, the carbon
Film covers the silicon oxide layer.
Optionally, the material of the C film is selected from: diamond and SP3The nothing that linkage content is higher than default content threshold value is fixed
Shape carbon.
Optionally, the metal interconnecting layer includes: interlayer dielectric layer, positioned at the surface on the barrier layer；
Groove is located in the interlayer dielectric layer and the barrier layer, and exposes the contact zone of the MOS device；Gold
Belong to material, is located in the groove.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, semiconductor substrate is provided；MOS device is formed on the semiconductor substrate；Form resistance
Barrier, the barrier layer cover the surface of the MOS device and semiconductor substrate, and the barrier layer includes C film, described
SP in C film3Linkage content is higher than default content threshold value；Metal interconnecting layer is formed in the barrier layer surface.Using above-mentioned side
Case, after forming MOS device on the semiconductor substrate, using the barrier layer for including C film, to semiconductor substrate and
MOS device is protected, middle compared with the prior art to be easily reduced the transmission speed of imaging sensor using silicon nitride and made
It can use the characteristics such as C film low-k, high thermoconductivity using the scheme of the embodiment of the present invention with the service life, mention
The transmission speed and service life of hi-vision sensor, and select SP3The higher C film of linkage content, helps so that carbon
Film disruptive field intensity with higher is more in line with demand of the imaging sensor to barrier layer.
Further, the barrier layer further includes silicon oxide layer, by forming C film on the surface of silicon oxide layer, compared to
C film directly is deposited in semiconductor substrate and MOS device, oxygen plasma etch C film can be used to avoid subsequent
When, oxygen plasma aoxidizes semiconductor substrate and MOS device surface (such as gate structure), namely avoids influence diagram
As the device performance of sensor.
Detailed description of the invention
Fig. 1 is a kind of device profile structural schematic diagram of imaging sensor in the prior art；
Fig. 2 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention；
Fig. 3 to Figure 10 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram.
Specific embodiment
In the prior art, semiconductor substrate is provided；MOS device is formed on the semiconductor substrate；Barrier layer is formed,
The barrier layer covers the surface of the MOS device and semiconductor substrate, and the barrier layer includes C film, the C film
Interior SP3Linkage content is higher than default content threshold value；Metal interconnecting layer is formed in the barrier layer surface.Using the above scheme, half
After forming MOS device on conductor substrate, silicon nitride and silica are generallyd use as silicide barrier layer, semiconductor is served as a contrast
Bottom and MOS device are protected, the influence that generates when being subsequently formed metal interconnecting layer to reduce, especially in pixel region,
The generation of white point can be efficiently reduced by protecting.
Referring to Fig.1, Fig. 1 is a kind of device profile structural schematic diagram of imaging sensor in the prior art.
Described image sensor may include: semiconductor substrate 100, MOS device 110, isolation structure 102, barrier layer
120。
Wherein, the MOS device 110 can be located in the semiconductor substrate 100, and the MOS device 110 may include
Source and drain doping area 111 and gate structure 112 can be isolated between adjacent MOS device 110 using isolation structure 102,
Such as shallow-trench isolation (Shallow Trench Isolation, STI) structure.
The barrier layer 120 may include silicon oxide layer 121 and silicon nitride layer 122, to semiconductor substrate 100 and
MOS device 110 is protected, the influence generated when being subsequently formed metal interconnecting layer to reduce.Wherein, the barrier layer 120 can
To cover the surface of the MOS device 110 and semiconductor substrate 100.
However, being easily reduced the transmission speed and service life of imaging sensor using silicon nitride.
The present inventor has found after study, since the dielectric constant of silicon nitride is larger (about 7.0), when device ruler
When very little reduction, Resistance-Capacitance delay (RC delay) can be generated, the transmission speed of imaging sensor is influenced；And since SiN has
There is low thermal coefficient (about 12.56W m-1K-1), it is easy to cause device heating, or even reduce the use longevity of imaging sensor
Life.
In embodiments of the present invention, after forming MOS device on the semiconductor substrate, using the resistance for including C film
Barrier protects semiconductor substrate and MOS device, middle compared with the prior art to be easily reduced image biography using silicon nitride
The transmission speed and service life of sensor, using the scheme of the embodiment of the present invention, can use C film low-k,
The characteristics such as high thermoconductivity, improve the transmission speed and service life of imaging sensor, and select SP3Linkage content is higher
C film helps so that C film disruptive field intensity with higher, is more in line with demand of the imaging sensor to barrier layer.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 2, Fig. 2 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S21 to step S24:
Step S21: semiconductor substrate is provided；
Step S22: MOS device is formed on the semiconductor substrate；
Step S23: barrier layer is formed, the barrier layer covers the surface of the MOS device and semiconductor substrate, described
Barrier layer includes C film, SP in the C film3Linkage content is higher than default content threshold value；
Step S24: metal interconnecting layer is formed in the barrier layer surface.
Above-mentioned each step is illustrated below with reference to Fig. 3 to Figure 10.
Fig. 3 to Figure 10 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram.
Referring to Fig. 3, semiconductor substrate 200 is provided, forms MOS device 210 in the semiconductor substrate 200.
In specific implementation, the semiconductor substrate 200 can be silicon substrate or the material of the semiconductor substrate 200
Material can also be the materials appropriate applied to imaging sensor such as germanium, SiGe, silicon carbide, GaAs or gallium indium, described
Semiconductor substrate 200 can also have outside for the silicon substrate of insulator surface or the germanium substrate of insulator surface, or growth
Prolong the substrate of layer (Epitaxy layer, Epi layer).Preferably, the semiconductor substrate 200 can be half be lightly doped
Conductor substrate, and doping type is opposite with drain region.Specifically, can by the semiconductor substrate 200 carry out ion implanting,
Realize deep trap doping (Deep Well Implant).
The MOS device 210 may include source and drain doping area 211 and gate structure 212, adjacent MOS device 210 it
Between can be isolated using isolation structure 202, such as sti structure.
It should be pointed out that the semiconductor substrate 200 may include pixel region and logic region, in pixel region
And may each comprise MOS device 210 in logic region, it can also include photodiode (Photo in the pixel region
Diode, PD).It specifically, can be in pixel region and logic area since the generation of white point is mainly from pixel region
Domain is all made of the scheme in the embodiment of the present invention, only can also use the scheme of the embodiment of the present invention in pixel region.
Referring to Fig. 4, silicon oxide layer 221 is formed, the silicon oxide layer 221 covers the MOS device 210 and semiconductor lining
Bottom 200.
Wherein, the material of the silicon oxide layer 221 can be SiO2。
In embodiments of the present invention, by being initially formed silicon oxide layer 221, carbon then is formed on the surface of silicon oxide layer 221
Film can use oxygen etc. compared to directly C film is formed in semiconductor substrate 200 and MOS device 210 to avoid subsequent
When plasma etching C film, oxygen plasma is to semiconductor substrate 200 and 210 surface of MOS device (such as gate structure)
It is aoxidized, namely avoids influencing the device performance of imaging sensor.
Referring to Fig. 5, C film 222, SP in the C film 222 are formed on the surface of the silicon oxide layer 2213Linkage content
Higher than default content threshold value.
It should be pointed out that in the prior art, barrier layer 120 (referring to Fig.1) may include 121 (reference of silicon oxide layer
Fig. 1) and silicon nitride layer 122 (referring to Fig.1), in embodiments of the present invention, barrier layer 220 may include silicon oxide layer 221 and carbon
Film 222.
Further, the material of the C film 222 can be selected from: diamond and SP3Linkage content is higher than default content
The amorphous carbon of threshold value.
Specifically, the amorphous carbon is two-dimentional graphite level or three-dimensional graphite crystallite, is existed on crystallite edge a large amount of
Irregular key removes and contains part SP2Key (also known as SP2Hybrid bond) except, also containing the SP of part3Key.More specifically,
The internal structure of amorphous carbon is not real amorphous body, but has the crystal with one spline structure of graphite, only by carbon original
The layer structure that sub- hexagon ring plain is formed is messy and irregular, and Crystallization is defective.Amorphous carbon is usually by stone
The molecular fragment of black layer structure substantially parallel to each other, is irregularly packed together, and may be simply referred to as Turbostratic.Interlayer or
It is linked up between fragment with the carbon atom bonding of the tetrahedron bonding mode of diamond lattic structure.
From the foregoing, it will be observed that by adjusting the SP in amorphous carbon in the preparation3Linkage content, the spy in adjustable amorphous carbon
Property parameter, such as SP3Linkage content is higher, disruptive field intensity (EBM) bigger, dielectric constant (Permittivity) is smaller, thermal coefficient
(Thermal conductivity) is bigger.
It is understood that since the main component of amorphous carbon is SP2Key and SP3Key, then SP3Linkage content can be adopted
Use SP3The quantity of key accounts for SP2Key and SP3The ratio of the sum of the quantity of key determines to indicate, or with other calculations appropriate
SP3Linkage content.
By taking a kind of existing amorphous carbon as an example, main component SP2Key, and SP3Linkage content is smaller, the amorphous carbon
Disruptive field intensity is about 7MV cm-1, dielectric constant is about 3.3, and thermal coefficient is 400~1000W m-1K-1。
For diamond, main component SP3Key, disruptive field intensity are about 21.5MV cm-1, dielectric constant is about
5.5, thermal coefficient is greater than 1300W m-1K-1。
As the material on barrier layer 220, disruptive field intensity needs are adapted to silicon nitride material in the prior art, namely close
Or the disruptive field intensity greater than silicon nitride, therefore in specific implementation, it can be determined according to this parameter of disruptive field intensity described default
Content threshold value.
Specifically, it can be determined when the disruptive field intensity parameter value of the C film 222 reaches default disruptive field intensity threshold value
SP in the C film 2223Linkage content is the default content threshold value.
By taking a kind of conventional silicon nitride in the prior art as an example, disruptive field intensity is about 16MV cm-1, then institute can be set
Stating default disruptive field intensity threshold value is 16MV cm-1, and then determine SP in the C film 2223Linkage content, and then with the SP3Key
Content is as the default content threshold value.
In embodiments of the present invention, when the disruptive field intensity parameter value of the C film 222 reaches default disruptive field intensity threshold value
When, determine SP in the amorphous carbon3Linkage content is the default content threshold value, and then uses SP3Linkage content is higher than default content
The amorphous carbon of threshold value is as C film 222, compared with the prior art, C film 222 can be made to have close or larger than nitrogen
The disruptive field intensity of SiClx, further such that the imaging sensor for using C film 222 meets demand.
Wherein it is possible to form the condition of the depositing operation of the C film by control, SP is obtained3Linkage content is higher than default
The C film 222 of content threshold value.
In specific implementation, chemical vapor deposition (Chemical Vapor Deposition, CVD) technique can be used
Form the C film, it is preferable that chemical vapor deposition process (Plasma Enhanced can be enhanced with using plasma
Chemical Vapor Deposition, PECVD) form the C film.
Wherein, the technological parameter of the plasma enhanced chemical vapor deposition technique includes following one or more:
Deposition gases may include: hydrocarbon gas and helium；
Depositing temperature can be 50 DEG C to 700 DEG C；
Deposition pressure can be less than or equal to 10Torr；
Deposition thickness can be 5nm to 200nm.
Wherein, the hydrocarbon gas may include C3H6、C2H2、CH4And other hydrocarbon gas appropriate.
It is understood that sedimentation time can determine that deposition thickness is thicker, and sedimentation time is longer according to deposition thickness.
Further, the flow velocity of hydrocarbon gas can be 1000sccm to 10000sccm in the deposition gases, described heavy
The flow velocity of helium can be 200sccm to 5000sccm in pneumatosis body.
Referring to Fig. 6, interlayer dielectric layer 240 is formed on the surface on the barrier layer 220, in the interlayer dielectric layer 240
Surface forms patterned mask layer 260.
Specifically, the material of the interlayer dielectric layer 240 can be silica.
More specifically, pecvd process can be used, the interlayer dielectric layer 240 is formed.Wherein, technological parameter can wrap
It includes following one or more:
Deposition gases can be selected from following one or more: SiH4, TEOS and O2；
Depositing temperature can be 50 DEG C to 600 DEG C；
Deposition pressure can be less than or equal to 10Torr；
Deposition thickness can be 5nm to 2000nm.
Referring to Fig. 7, uses the patterned mask layer 260 for exposure mask, the interlayer dielectric layer 240 is performed etching,
To form groove 251, the groove 251 exposes the C film 222.
Specifically, etching parameters may include following one or more:
Etching gas can be selected from: H2And N2Mixed gas and carbon fluoride (such as C4F6)；
Etching temperature can be 20 DEG C to 500 DEG C；
Etching pressure can be less than or equal to 10Torr.
Referring to Fig. 8, the C film 222 in the barrier layer 220 is performed etching, to extend the groove 251, the ditch
Slot 251 exposes the silicon oxide layer 221.
Specifically, etching parameters may include following one or more:
Etching gas may include: O2And argon gas；
Etching temperature can be 20 DEG C to 500 DEG C；
Etching pressure can be less than or equal to 10Torr；
Etch thicknesses can be 5nm to 200nm.
Further, O in the etching gas2Flow velocity can be 1000sccm to 15000sccm；The etching gas
The flow velocity of middle argon gas is 1000sccm to 10000sccm.
It should be pointed out that can also be using other conditions and technique appropriate to the C film in the barrier layer 220
222 perform etching, in embodiments of the present invention with no restriction to this.
Referring to Fig. 9, the silicon oxide layer 221 in the barrier layer 220 is performed etching, it is described to extend the groove 251
Groove 251 exposes the contact zone of the MOS device 210.
Wherein, the contact zone can serve to indicate that realize the electrical property of imaging sensor and connect metal interconnection structure
It is connected to the region of MOS device 210, for example, area surface or drain region surface.
Specifically, etching parameters may include following one or more:
Etching gas can be selected from: H2And N2Mixed gas and carbon fluoride (such as C4F6)；
Etching temperature can be 20 DEG C to 500 DEG C；
Etching pressure can be less than or equal to 10Torr；
Etch thicknesses can be 5nm to 2000nm.
Referring to Fig.1 0, metal material 252 is filled in the groove 251 (referring to Fig. 9), to form described image sensor
Metal interconnecting layer a part.
Specifically, in a kind of existing imaging sensor, metal material 252 is filled in the groove 251, it can be with shape
More metal layers and dielectric layer are formed at conductive plunger, and then on the surface of the interlayer dielectric layer 240 and conductive plunger.
Wherein, the metal interconnecting layer may include the interlayer dielectric layer 240, the conductive plunger and the multilayer gold being subsequently formed
Belong to layer and dielectric layer.
In embodiments of the present invention, after forming MOS device 210 in the semiconductor substrate 200, using including that carbon is thin
The barrier layer 220 of film 222, protects semiconductor substrate 200 and MOS device 210, compared with the prior art in use nitrogen
The transmission speed and service life that SiClx is easily reduced imaging sensor can use using the scheme of the embodiment of the present invention
The characteristics such as low-k, the high thermoconductivity of C film 222 improve the transmission speed and service life of imaging sensor,
And select SP3The higher C film 222 of linkage content helps so that the disruptive field intensity with higher of C film 222, more accords with
Close demand of the imaging sensor to barrier layer.
The embodiment of the invention also provides a kind of imaging sensor, referring to Fig.1 0, described image sensor may include:
Semiconductor substrate 200；
MOS device 210 is located in the semiconductor substrate 200；
Barrier layer 220, covers the surface of the MOS device 210 and semiconductor substrate 200, and the barrier layer 220 includes
C film 222, SP in the C film 2223Linkage content is higher than default content threshold value；
Metal interconnecting layer, positioned at the surface on the barrier layer 220.
Further, the barrier layer 220 can also include silicon oxide layer 221, cover the MOS device 210 and half
Conductor substrate 200, the C film 222 cover the silicon oxide layer 221.
Further, the material of the C film 222 can be selected from: diamond and SP3Linkage content is higher than default content
The amorphous carbon of threshold value.
Further, the metal interconnecting layer may include:
Interlayer dielectric layer 240, positioned at the surface on the barrier layer 220；
Groove 251 (referring to Fig. 9), is located in the interlayer dielectric layer 240 and the barrier layer 220, and exposes described
The contact zone of MOS device 210；
Metal material 252 is located in the groove 251.
In specific implementation, more detailed contents in relation to the imaging sensor referring to figure 2. the description into Figure 10 into
Row executes, and details are not described herein again.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided；
MOS device is formed on the semiconductor substrate；
Barrier layer is formed, the barrier layer covers the surface of the MOS device and semiconductor substrate, and the barrier layer includes carbon
Film, SP in the C film3Linkage content is higher than default content threshold value；
Metal interconnecting layer is formed in the barrier layer surface.
2. the forming method of imaging sensor according to claim 1, which is characterized in that the barrier layer further include:
Silicon oxide layer, the silicon oxide layer cover the MOS device and semiconductor substrate, and the C film covers the oxidation
Silicon layer.
3. the forming method of imaging sensor according to claim 1, which is characterized in that the material of the C film selects
From: diamond and SP3Linkage content is higher than the amorphous carbon of default content threshold value.
4. the forming method of imaging sensor according to claim 1, which is characterized in that use chemical vapor deposition process
Form the C film；
Wherein, the technological parameter of the chemical vapor deposition process includes following one or more:
Deposition gases include: hydrocarbon gas and helium；
Depositing temperature is 50 DEG C to 700 DEG C；
Deposition pressure is less than or equal to 10Torr；
Deposition thickness is 5nm to 200nm.
5. the forming method of imaging sensor according to claim 1, which is characterized in that formed in the barrier layer surface
Metal interconnecting layer includes:
Interlayer dielectric layer is formed on the surface on the barrier layer；
The interlayer dielectric layer and the barrier layer are performed etching, to form groove, the groove exposes the MOS device
Contact zone；
Metal material is filled in the groove.
6. the forming method of imaging sensor according to claim 5, which is characterized in that thin to the carbon in the barrier layer
When film performs etching, etching parameters include following one or more:
Etching gas includes: O2And argon gas；
Etching temperature is 20 DEG C to 500 DEG C；
It etches pressure and is less than or equal to 10Torr；
Etch thicknesses are 5nm to 200nm.
7. a kind of imaging sensor characterized by comprising
Semiconductor substrate；
MOS device is located in the semiconductor substrate；
Barrier layer covers the surface of the MOS device and semiconductor substrate, and the barrier layer includes C film, and the carbon is thin
SP in film3Linkage content is higher than default content threshold value；
Metal interconnecting layer, positioned at the surface on the barrier layer.
8. imaging sensor according to claim 7, which is characterized in that the barrier layer further include:
Silicon oxide layer, covers the MOS device and semiconductor substrate, and the C film covers the silicon oxide layer.
9. imaging sensor according to claim 7, which is characterized in that the material of the C film is selected from: diamond with
And SP3Linkage content is higher than the amorphous carbon of default content threshold value.
10. imaging sensor according to claim 7, which is characterized in that the metal interconnecting layer includes: inter-level dielectric
Layer, positioned at the surface on the barrier layer；
Groove is located in the interlayer dielectric layer and the barrier layer, and exposes the contact zone of the MOS device；
Metal material is located in the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811027045.2A CN109148503A (en) | 2018-09-04 | 2018-09-04 | Imaging sensor and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811027045.2A CN109148503A (en) | 2018-09-04 | 2018-09-04 | Imaging sensor and forming method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109148503A true CN109148503A (en) | 2019-01-04 |
Family
ID=64826805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811027045.2A Pending CN109148503A (en) | 2018-09-04 | 2018-09-04 | Imaging sensor and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109148503A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110013181A (en) * | 2019-04-18 | 2019-07-16 | 碳翁(北京)科技有限公司 | A kind of multi-functional roasting plant |
| CN110013185A (en) * | 2019-05-05 | 2019-07-16 | 碳翁(北京)科技有限公司 | A kind of bath physical therapy basin |
| CN113838881A (en) * | 2021-11-26 | 2021-12-24 | 晶芯成(北京)科技有限公司 | Image sensor and method for manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1879238A (en) * | 2003-11-13 | 2006-12-13 | 皇家飞利浦电子股份有限公司 | Electronic device comprising a protective barrier layer stack |
| US20080303068A1 (en) * | 2007-06-08 | 2008-12-11 | International Business Machines Corporation | Field effect transistor using carbon based stress liner |
| CN101572252A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Etching stopping layer, semiconductor device with through hole and method for forming same two |
| CN107275279A (en) * | 2016-04-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and its forming method |
-
2018
- 2018-09-04 CN CN201811027045.2A patent/CN109148503A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1879238A (en) * | 2003-11-13 | 2006-12-13 | 皇家飞利浦电子股份有限公司 | Electronic device comprising a protective barrier layer stack |
| US20080303068A1 (en) * | 2007-06-08 | 2008-12-11 | International Business Machines Corporation | Field effect transistor using carbon based stress liner |
| CN101572252A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Etching stopping layer, semiconductor device with through hole and method for forming same two |
| CN107275279A (en) * | 2016-04-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and its forming method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110013181A (en) * | 2019-04-18 | 2019-07-16 | 碳翁(北京)科技有限公司 | A kind of multi-functional roasting plant |
| CN110013185A (en) * | 2019-05-05 | 2019-07-16 | 碳翁(北京)科技有限公司 | A kind of bath physical therapy basin |
| CN113838881A (en) * | 2021-11-26 | 2021-12-24 | 晶芯成(北京)科技有限公司 | Image sensor and method for manufacturing the same |
| CN113838881B (en) * | 2021-11-26 | 2022-02-08 | 晶芯成(北京)科技有限公司 | Image sensor and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101979509B1 (en) | Self-aligned gate hard mask and method forming same | |
| CN105225951B (en) | The forming method of fin formula field effect transistor | |
| US6383951B1 (en) | Low dielectric constant material for integrated circuit fabrication | |
| KR101409374B1 (en) | Fabricating method of a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated by the same | |
| JP4949628B2 (en) | Method for protecting a strained semiconductor substrate layer during a CMOS process | |
| JP2007214481A (en) | Semiconductor device | |
| TWI396277B (en) | Method of forming a semiconductor device and an optical device and structure thereof | |
| US20210273115A1 (en) | Vertical field effect transistor with low-resistance bottom source-drain contact | |
| US7713834B2 (en) | Method of forming isolation regions for integrated circuits | |
| KR20080014307A (en) | Semiconductor device and method for fabricating the same | |
| CN109148503A (en) | Imaging sensor and forming method thereof | |
| US10332746B1 (en) | Post UV cure for gapfill improvement | |
| US20050233514A1 (en) | PMD liner nitride films and fabrication methods for improved NMOS performance | |
| JP2006512766A (en) | Method for forming a thick strained silicon layer and semiconductor structure incorporating a thick strained silicon layer | |
| TW201017757A (en) | Method of fabricating a semiconductor device | |
| US9034749B2 (en) | Gate electrode with stabilized metal semiconductor alloy-semiconductor stack | |
| JP2013125970A (en) | Semiconductor device for bsi image sensor and formation method of the same | |
| TW202032637A (en) | Semiconductor devices and methods for forming the same | |
| US7453133B2 (en) | Silicide/semiconductor structure and method of fabrication | |
| KR100603588B1 (en) | Semiconductor device with low contact resistance and method for fabricating the same | |
| JP2007516598A (en) | PECVD silicon-rich silicon oxide layer to reduce UV charging | |
| US9202859B1 (en) | Well resistors and polysilicon resistors | |
| KR20100029261A (en) | A technique for forming an interlayer dielectric material of increased reliability above a structure including closely spaced lines | |
| US10388562B2 (en) | Composite contact etch stop layer | |
| CN109300790B (en) | Contact etch stop layer with sacrificial polysilicon layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190104 |
|
| WD01 | Invention patent application deemed withdrawn after publication |