CN109147693A - 具有红外识别的发光二极管显示装置 - Google Patents

具有红外识别的发光二极管显示装置 Download PDF

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CN109147693A
CN109147693A CN201811018249.XA CN201811018249A CN109147693A CN 109147693 A CN109147693 A CN 109147693A CN 201811018249 A CN201811018249 A CN 201811018249A CN 109147693 A CN109147693 A CN 109147693A
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film transistor
tft
thin film
electrically connected
scan line
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CN109147693B (zh
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程江坤
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2018/113342 priority patent/WO2020047981A1/zh
Priority to US16/619,097 priority patent/US10943085B2/en
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    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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Abstract

一种具有红外识别的发光二极管显示装置包括多个像素单元，每一所述多个像素单元包括：一第一扫描线；一第二扫描线；一第一数据线；一第二数据线；一感应线；一第一像素，电性连接至所述第一扫描线、所述第二扫描线及所述第一数据线并用于产生红外光；一感应单元，电性连接至所述第二扫描线及所述感应线并用于感应红外光；以及一第二像素，电性连接至所述第一扫描线及所述第二数据线。

Description

具有红外识别的发光二极管显示装置
技术领域
本揭示涉及显示装置技术领域，特别是涉及一种具有红外识别的发光二极管显示装置。
背景技术
随着多媒体的发展，视觉呈现的方式也越来越多样化，人机互动交流越来越频繁，因此人机交流互动的方式受到使用者的重视。
手写、纹识识别、触屏等是目前应用最多且最普及的人机交流方式。传统的指纹识别依赖外挂式指纹识别模块，在机构设计等方面存在诸多限制。随着全屏、高屏占比等概念和相关产品的普及，人们对传统纹识别或生物识别的要求越来越高。更明确地说，如果能实现全屏指纹识别，则无需设置外挂式指纹识别模块，可降低电子装置的体积及重量。
因此需要对现有技术中的问题提出解决方法。
发明内容
本揭示的目的在于提供一种具有红外识别的发光二极管显示装置，其能解决现有技术中的问题。
为解决上述问题，本揭示提供的一种具有红外识别的发光二极管显示装置包括多个像素单元，每一所述多个像素单元包括：一第一扫描线；一第二扫描线；一第一数据线；一第二数据线；一感应线；一第一像素，电性连接至所述第一扫描线、所述第二扫描线及所述第一数据线并用于产生红外光；一感应单元，电性连接至所述第二扫描线及所述感应线并用于感应红外光；以及一第二像素，电性连接至所述第一扫描线及所述第二数据线。
于一实施例中，所述具有红外识别的发光二极管显示装置进一步包括至少一源极驱动单元，所述源极驱动单元电性连接至所述第一数据线及所述第二数据线、通过所述第一数据线向所述第一像素提供数据信号并通过所述第二数据线向所述第二像素提供数据信号。
于一实施例中，所述具有红外识别的发光二极管显示装置进一步包括至少一栅极驱动单元，所述栅极驱动单元电性连接至所述第一扫描线及所述第二扫描线并用于依序选择所述第一扫描线及所述第二扫描线。
于一实施例中，所述具有红外识别的发光二极管显示装置进一步包括至少一读取单元，所述读取单元电性连接至所述感应线并用于读取所述感应单元所感应的红外光。
于一实施例中，所述第一像素包括一第一薄膜晶体管、一第二薄膜晶体管、一第一发光二极管、一第三薄膜晶体管、一第四薄膜晶体管以及一红外发光二极管；所述第一薄膜晶体管的栅极电性连接至所述第一扫描线，所述第一薄膜晶体管的源极电性连接至所述第一数据线，所述第一薄膜晶体管的汲极电性连接至所述第二薄膜晶体管的栅极；所述第二薄膜晶体管的源极电性连接至一直流电压，所述第二薄膜晶体管的汲极电性连接至所述第一发光二极管；所述第三薄膜晶体管的栅极电性连接至所述第二扫描线，所述第三薄膜晶体管的源极电性连接至所述第一数据线，所述第三薄膜晶体管的汲极电性连接至所述第四薄膜晶体管的栅极；所述第四薄膜晶体管的源极电性连接至所述直流电压，所述第四薄膜晶体管的汲极电性连接至所述红外发光二极管。
于一实施例中，所述感应单元包括一第五薄膜晶体管以及一第六薄膜晶体管；所述第五薄膜晶体管的栅极电性连接至所述第二扫描线，所述第五薄膜晶体管的源极电性连接至所述感应线，所述第五薄膜晶体管的汲极电性连接至所述第六薄膜晶体管的汲极；所述第六薄膜晶体管的栅极电性连接至所述第六薄膜晶体管的源极。
于一实施例中，所述第二像素包括一第七薄膜晶体管、一第八薄膜晶体管以及一第二发光二极管；所述第七薄膜晶体管的栅极电性连接至所述第一扫描线，所述第七薄膜晶体管的源极电性连接至所述第二数据线，所述第七薄膜晶体管的汲极电性连接至所述第八薄膜晶体管的栅极；所述第八薄膜晶体管的源极电性连接至所述直流电压，所述第八薄膜晶体管的汲极电性连接至所述第二发光二极管。
于一实施例中，在第一状态时，所述第一扫描线被选择，所述第一薄膜晶体管及所述第七薄膜晶体管导通；在第一状态时，所述第二扫描线未被选择，所述第三薄膜晶体管及所述第五薄膜晶体管不导通，所述红外发光二极管不导通，所述感应单元不感应红外光。
于一实施例中，在第二状态时，所述第一扫描线未被选择，所述第一薄膜晶体管及所述第七薄膜晶体管不导通；在第二状态时，所述第二扫描线被选择，所述第三薄膜晶体管及所述第五薄膜晶体管导通，所述红外发光二极管导通，所述感应单元感应红外光。
于一实施例中，所述红外发光二极管集成至所述第一发光二极管。
相较于现有技术，本揭示之发光二极管显示装置中，将所述红外发光二极管及所述感应单元制作于显示区(像素阵列)中，故无需设置外挂式识别模块，进而能达成全屏识别(例如指纹识别)并降低发光二极管显示装置的体积及重量。
为让本揭示的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
附图说明
图1显示根据本揭示实施例之具有红外识别的发光二极管显示装置的示意图。
图2显示根据本揭示实施例之像素单元的电路图。
图3显示根据本揭示实施例之第一扫描线、第二扫描线、第一数据线、第二数据线的波形图。
图4显示根据本揭示实施例之第一发光二极管、红外发光二极管及第二发光二极管的排列示意图。
图5显示根据本揭示实施例之第一发光二极管、红外发光二极管及感应单元的部分结构示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。
请参阅图1以及图2，图1显示根据本揭示实施例之具有红外识别的发光二极管显示装置的示意图。图2显示根据本揭示实施例之像素单元的电路图。
所述发光二极管显示装置可以为一有机发光二极管(Organic Light EmittingDiode，OLED)显示装置。所述发光二极管显示装置包括多个像素单元10、至少一源极驱动单元12(图中显示一个源极驱动单元12)、至少一栅极驱动单元14(图中显示一个栅极驱动单元14)以及至少一读取单元16(图中显示一个读取单元16)。
所述多个像素单元10电性连接至所述源极驱动单元12、所述栅极驱动单元14以及所述读取单元16。每一所述多个像素单元10包括一第一扫描线S(n)、一第二扫描线S(n+1)、一第一数据线D(n)、一第二数据线D(n+1)、一感应线R(n)、一第一像素100、一感应单元102以及一第二像素104。
所述第一扫描线S(n)及所述第二扫描线S(n+1)沿一第一方向形成。所述第一数据线D(n)、所述第二数据线D(n+1)及所述感应线R(n)沿一第二方向形成。所述第一方向垂直于所述第二方向。
所述源极驱动单元12电性连接至所述第一数据线D(n)及所述第二数据线D(n+1)、通过所述第一数据线D(n)向所述第一像素100提供数据信号并通过所述第二数据线D(n+1)向所述第二像素104提供数据信号。
所述栅极驱动单元14电性连接至所述第一扫描线S(n)及所述第二扫描线S(n+1)并用于依序选择所述第一扫描线S(n)及所述第二扫描线S(n+1)以使所述第一扫描线S(n)及所述第二扫描线S(n+1)依序导通。
所述读取单元16电性连接至所述感应线R(n)并用于读取所述感应单元102所感应的红外光。
于一实施例中，所述读取单元16可以集成至所述源极驱动单元12。
所述第一像素100电性连接至所述第一扫描线S(n)、所述第二扫描线S(n+1)及所述第一数据线D(n)。所述第一像素100用于显示一影像并产生红外光。所述第一像素100包括一第一薄膜晶体管T11、一第二薄膜晶体管T12、一第一发光二极管LED_1、一第三薄膜晶体管T21、一第四薄膜晶体管T22以及一红外发光二极管LED_IR。
所述第一薄膜晶体管T11、所述第二薄膜晶体管T12及所述第一发光二极管LED_1用于显示影像。所述第三薄膜晶体管T21、所述第四薄膜晶体管T22及所述红外发光二极管LED_IR用于发射红外光。
所述第一薄膜晶体管T11的栅极电性连接至所述第一扫描线S(n)，所述第一薄膜晶体管T 11的源极电性连接至所述第一数据线D(n)，所述第一薄膜晶体管T11的汲极电性连接至所述第二薄膜晶体管T12的栅极。
所述第二薄膜晶体管T12的源极电性连接至一直流电压VDD，所述第二薄膜晶体管T 12的汲极电性连接至所述第一发光二极管LED_1。
所述第三薄膜晶体管T21的栅极电性连接至所述第二扫描线S(n+1)，所述第三薄膜晶体管T21的源极电性连接至所述第一数据线D(n)，所述第三薄膜晶体管T21的汲极电性连接至所述第四薄膜晶体管T22的栅极。
所述第四薄膜晶体管T22的源极电性连接至所述直流电压VDD，所述第四薄膜晶体管T22的汲极电性连接至所述红外发光二极管LED_IR。
所述感应单元102电性连接至所述第二扫描线S(n+1)及所述感应线R(n)并用于感应所述红外发光二极管LED_IR发射的红外光或者环境中的红外光。所述感应单元102包括一第五薄膜晶体管T31以及一第六薄膜晶体管T32。
所述第五薄膜晶体管T31的栅极电性连接至所述第二扫描线S(n+1)，所述第五薄膜晶体管T31的源极电性连接至所述感应线R(n)，所述第五薄膜晶体管T31的汲极电性连接至所述第六薄膜晶体管T32的汲极。
所述第六薄膜晶体管T32的栅极电性连接至所述第六薄膜晶体管T32的源极。
本揭示之发光二极管显示装置的特点在于将所述红外发光二极管LED_IR(用于发射红外光)及所述感应单元102(用于感应红外光)制作于显示区(像素阵列)中，故无需设置外挂式识别模块，进而能达成全屏识别(例如指纹识别)并降低发光二极管显示装置的体积及重量。
所述红外发光二极管LED_IR(用于发射红外光)、所述感应单元102(用于感应红外光)及所述读取单元16可达到指纹识别、高精度手写输入识别、手势操作识别、红外成像等功能。
所述第二像素104电性连接至所述第一扫描线S(n)及所述第二数据线D(n+1)。所述第二像素104包括一第七薄膜晶体管T41、一第八薄膜晶体管T42以及一第二发光二极管LED_2。
所述第七薄膜晶体管T41的栅极电性连接至所述第一扫描线S(n)，所述第七薄膜晶体管T41的源极电性连接至所述第二数据线D(n+1)，所述第七薄膜晶体管T41的汲极电性连接至所述第八薄膜晶体管T42的栅极。
所述第八薄膜晶体管T42的源极电性连接至所述直流电压VDD，所述第八薄膜晶体管T42的汲极电性连接至所述第二发光二极管LED_2。
请参阅图1至图3，图3显示根据本揭示实施例之第一扫描线S(n)、第二扫描线S(n+1)、第一数据线D(n)、第二数据线D(n+1)的波形图。
在第一状态S 1时，所述第一扫描线S(n)被选择(低电位)，所述第一薄膜晶体管T11及所述第七薄膜晶体管T41导通，所述第一数据线D(n)的数据信号写入第一像素100(控制所述第一发光二极管LED_1发光或不发光)，所述第二数据线D(n+1)的数据信号写入所述第二像素104(控制所述第二发光二极管LED_2发光或不发光)。
在第一状态S 1时，所述第二扫描线S(n+1)未被选择(高电位)，所述第三薄膜晶体管T21及所述第五薄膜晶体管T31不导通，所述红外发光二极管LED_IR不导通(不发光)，所述感应单元102不感应红外光。
在第二状态S2时，所述第一扫描线S(n)未被选择(高电位)，所述第一薄膜晶体管T11及所述第七薄膜晶体管T41不导通，所述第一数据线D(n)的数据信号不会写入所述第一发光二极管LED_1，所述第二数据线D(n+1)的数据信号不会写入所述第二发光二极管LED_2。
在第二状态S2时，所述第二扫描线S(n+1)被选择(低电位)，所述第三薄膜晶体管T21及所述第五薄膜晶体管T31导通，所述红外发光二极管LED_IR导通(发光)，所述感应单元102感应红外光。
请参阅图4，图4显示根据本揭示实施例之第一发光二极管LED_1、红外发光二极管LED_IR及第二发光二极管LED_2的排列示意图。
所述第一发光二极管LED_1、所述红外发光二极管LED_IR及所述第二发光二极管LED_2呈现菱形分布。于一实施例中，由于绿色发光二极管的特性(例如发光效率及寿命)的变化小于红色发光二极管及蓝色发光二极管的特性变化，因此将所述红外发光二极管LED_IR集成至绿色的第一发光二极管LED_1不仅能有效利用空间，还能够降低所述红外发光二极管LED_IR对分辨率的影响。也就是说，所述第一发光二极管LED_1可以为绿色发光二极管，所述第二发光二极管LED_2可以为红色发光二极管或蓝色发光二极管。
如图4所示的菱形50的区域中，一对角线的两端为红外发光二极管LED_IR集成至绿色发光二极管，另一对角线的两端分别为红色发光二极管及蓝色发光二极管。因此，菱形50的区域包括绿色发光二极管、红色发光二极管、蓝色发光二极管及红外发光二极管LED_IR。
要说明的是，所述红外发光二极管LED_IR亦可集成至红色发光二极管或蓝色发光二极管。
请参阅图5，图5显示根据本揭示实施例之第一发光二极管LED_1、红外发光二极管LED_IR及感应单元102的部分结构示意图。
柔性基板500可以但不限于为一聚酰亚胺(Polyimide，PI)柔性基板。
半导体层501的材料例如为低温多晶硅(Low Temperature Poly-Silicon，LTPS)。
所述柔性基板500与所述半导体层501之间可设置缓冲层。
绝缘层502及503的材料例如为氮化硅(SiNx)或二氧化硅(SiO2)。
半透明有机绝缘层504及505需对红外光有较好的透过率。
金属导电层510、511及512作为图2中用于控制第一发光二极管LED_1的薄膜晶体管(第一薄膜晶体管T11或第二薄膜晶体管T12)的电极(栅极、源极和汲极)。
金属导电层512、521及522作为图2中用于控制红外发光二极管LED_IR的薄膜晶体管(第三薄膜晶体管T21或第四薄膜晶体管T22)的电极(栅极、源极和汲极)。
金属导电层530、531及532作为图2中感应单元102的薄膜晶体管(第五薄膜晶体管T31或第六薄膜晶体管T32)的电极(栅极、源极和汲极)。
阳极540、有机发光层541及阴极560形成图2之第一发光二极管。所述阳极540具有反射层，例如ITO-Ag-ITO。所述有机发光层541能产生红光、绿光或蓝光。所述阴极560为透明电极。
阳极550、有机发光层551及所述阴极560形成图2之红外发光二极管LED_IR。所述阳极550具有反射层，例如ITO-Ag-ITO。所述有机发光层551能产生红外光。
半导体层533及阻光层534形成图2之感应单元102的光感应结构。所述半导体层533对红外光敏感，例如掺杂锗的非晶硅(a-Si)。当红外光照射所述半导体层533时会影响所述感应单元102的薄膜晶体管(第五薄膜晶体管T31或第六薄膜晶体管T32)的电流。所述阻光层534可阻挡可见光并让红外光通过，例如为含有非晶硅锗(a-SiGe)材料的膜层结构。
光线L1为图2之第一像素100的第一发光二极管LED_1在显示影像时发出的可见光。光线L2为图2之红外发光二极管LED_IR发射的红外光。光线L3为光线L2在遇到待探测物后反射的红外光或者环境中的红外光。
本揭示之发光二极管显示装置中，将所述红外发光二极管及所述感应单元制作于显示区(像素阵列)中，故无需设置外挂式识别模块，进而能达成全屏识别(例如指纹识别)并降低发光二极管显示装置的体积及重量。
综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种具有红外识别的发光二极管显示装置，包括多个像素单元，其特征在于，每一所述多个像素单元包括：
一第一扫描线；
一第二扫描线；
一第一数据线；
一第二数据线；
一感应线；
一第一像素，电性连接至所述第一扫描线、所述第二扫描线及所述第一数据线并用于产生红外光；
一感应单元，电性连接至所述第二扫描线及所述感应线并用于感应红外光；以及
一第二像素，电性连接至所述第一扫描线及所述第二数据线。
2.根据权利要求1所述的具有红外识别的发光二极管显示装置，其特征在于，进一步包括至少一源极驱动单元，所述源极驱动单元电性连接至所述第一数据线及所述第二数据线、通过所述第一数据线向所述第一像素提供数据信号并通过所述第二数据线向所述第二像素提供数据信号。
3.根据权利要求1所述的具有红外识别的发光二极管显示装置，其特征在于，进一步包括至少一栅极驱动单元，所述栅极驱动单元电性连接至所述第一扫描线及所述第二扫描线并用于依序选择所述第一扫描线及所述第二扫描线。
4.根据权利要求1所述的具有红外识别的发光二极管显示装置，其特征在于，进一步包括至少一读取单元，所述读取单元电性连接至所述感应线并用于读取所述感应单元所感应的红外光。
5.根据权利要求1所述的具有红外识别的发光二极管显示装置，其特征在于，所述第一像素包括一第一薄膜晶体管、一第二薄膜晶体管、一第一发光二极管、一第三薄膜晶体管、一第四薄膜晶体管以及一红外发光二极管；
所述第一薄膜晶体管的栅极电性连接至所述第一扫描线，所述第一薄膜晶体管的源极电性连接至所述第一数据线，所述第一薄膜晶体管的汲极电性连接至所述第二薄膜晶体管的栅极；
所述第二薄膜晶体管的源极电性连接至一直流电压，所述第二薄膜晶体管的汲极电性连接至所述第一发光二极管；
所述第三薄膜晶体管的栅极电性连接至所述第二扫描线，所述第三薄膜晶体管的源极电性连接至所述第一数据线，所述第三薄膜晶体管的汲极电性连接至所述第四薄膜晶体管的栅极；
所述第四薄膜晶体管的源极电性连接至所述直流电压，所述第四薄膜晶体管的汲极电性连接至所述红外发光二极管。
6.根据权利要求5所述的具有红外识别的发光二极管显示装置，其特征在于，所述感应单元包括一第五薄膜晶体管以及一第六薄膜晶体管；
所述第五薄膜晶体管的栅极电性连接至所述第二扫描线，所述第五薄膜晶体管的源极电性连接至所述感应线，所述第五薄膜晶体管的汲极电性连接至所述第六薄膜晶体管的汲极；
所述第六薄膜晶体管的栅极电性连接至所述第六薄膜晶体管的源极。
7.根据权利要求6所述的具有红外识别的发光二极管显示装置，其特征在于，所述第二像素包括一第七薄膜晶体管、一第八薄膜晶体管以及一第二发光二极管；
所述第七薄膜晶体管的栅极电性连接至所述第一扫描线，所述第七薄膜晶体管的源极电性连接至所述第二数据线，所述第七薄膜晶体管的汲极电性连接至所述第八薄膜晶体管的栅极；
所述第八薄膜晶体管的源极电性连接至所述直流电压，所述第八薄膜晶体管的汲极电性连接至所述第二发光二极管。
8.根据权利要求7所述的具有红外识别的发光二极管显示装置，其特征在于，在第一状态时，所述第一扫描线被选择，所述第一薄膜晶体管及所述第七薄膜晶体管导通；
在第一状态时，所述第二扫描线未被选择，所述第三薄膜晶体管及所述第五薄膜晶体管不导通，所述红外发光二极管不导通，所述感应单元不感应红外光。
9.根据权利要求8所述的具有红外识别的发光二极管显示装置，其特征在于，在第二状态时，所述第一扫描线未被选择，所述第一薄膜晶体管及所述第七薄膜晶体管不导通；
在第二状态时，所述第二扫描线被选择，所述第三薄膜晶体管及所述第五薄膜晶体管导通，所述红外发光二极管导通，所述感应单元感应红外光。
10.根据权利要求5所述的具有红外识别的发光二极管显示装置，其特征在于，所述红外发光二极管集成至所述第一发光二极管。
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