CN109146068B - Liquid memristor and preparation method and application thereof - Google Patents
Liquid memristor and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a liquid memristor and a preparation method and application thereof, wherein the liquid memristor is a device formed by putting a metal electrode into a solution, the solution is an ionic solution formed by dissolving lead halide in an organic solvent, the lead halide provides an ion source in the structure of the device, and lead ions freely and stably move along with the buffering effect of the organic solvent. The liquid memristor based on the lead halide can flexibly adjust the concentration of an ionic solution, the ion type and the position of an electrode, can simulate a specific synapse function by utilizing different forms of electric signals, and can adjust the internal structural factors of a liquid device for higher-level nerve simulation functions. The liquid memristor with the characteristic of flexible regulation opens up a new way for realizing multifunctional synaptic plasticity, and further expands the application of the fields of neural networks and artificial intelligence.
Description
Technical Field
The invention belongs to the technical field of information storage and calculation, and particularly relates to a liquid memristor, a preparation method and application thereof, which can be applied to the fields of biological simulation, storage technology, neural network, artificial intelligence and the like.
Technical Field
In a neural network, neurons are basic elements having a regulatory function and information processing by synaptic crossing connection, and in order to realize an adaptive neural network function, neuromorphic hardware composed of electronic devices has received a great deal of attention. These electronic devices with tunable and storable conductive states can adaptively generate and adjust neural signals, and memristors have attracted much research interest as an emerging and efficient device to implement the function of a neural network.
The memristor is a novel electronic component, is independent of basic elements such as a resistor, a capacitor and an inductor by unique nonlinear electrical characteristics, is considered as a fourth basic passive electronic element, and is proposed by Hua scientist Chuan Chuntang professor in 1971. The memristor has inherent parallel information processing and storing capability, far exceeds a CMOS (complementary metal oxide semiconductor) based neuromorphic circuit in terms of functional integration and size, and is mainly embodied in the aspects of simulating various synaptic activities and neuromorphic computing functions. Such as short-term memory, long-term memory, memory transition, post-tonic enhancement, time-dependent plasticity, frequency-dependent plasticity, synaptic depression, habituation and sensitization.
From the perspective of device structure, memristors are typically fabricated using solid metal-insulator-metal devices made of metal oxides, chalcogens, amorphous silicon, and other inorganic materials, by vacuum deposition at high temperatures in a complex process. For the solid ionic memristor, the smoothly-graded conducting curve has high dependence on the thickness of the device and the interface composition, and the accurate control of the growth position, orientation and speed of the ion movement in the solid substance is difficult. Thus, the conductive state of the device does not correspond precisely to the state in which the conductive filaments are formed in the insulating layer. Generally, the device current increases rapidly as the conductive filament grows under the external electric field to reach the bottom electrode, which is believed to switch from a low on state to a high on state. These abrupt memristive behaviors may be attractive for data storage, however they have limited attractiveness in synaptic simulation, since the regulatory features of synaptic activity under continuous synaptic stimulation are continuously changing rather than abrupt, and the simplicity of device structure and ionic processes also greatly hinder the functional realization of synaptic function and complex regulation. The existing solid memristor cannot accurately control factors such as the growth position, the orientation and the speed of the movement of ions in the solid substance. There is a need for a new type of memristor. With the gradual report of the liquid memristor, the unique memristor characteristics of the liquid memristor play an important role in the aspects of soluble solution processing devices, neural network functions and the like.
Disclosure of Invention
The invention aims to: the solid memristor aims at the problem that the conventional solid memristor cannot accurately control the growth position, the orientation, the speed and other factors of the movement of ions in the solid substance. The invention provides a liquid memristor, which can flexibly adjust the concentration of an ionic solution, the ion type and the electrode position, can simulate specific synaptic functions by utilizing different forms of electric signals, and can adjust the internal structural factors of a liquid device for higher-level neural simulation functions. The liquid memristor with the characteristic of flexible regulation opens up a new way for realizing multifunctional synaptic plasticity, and further expands the application of the fields of neural networks and artificial intelligence.
The liquid memristor mainly emphasizes three advantages of device regulation: 1. the concentration dependence effect can supplement the liquid concentration at any time; 2. the position of the electrode is adjusted, so that the position between the electrodes can be flexibly shortened or enlarged; 3. other ion species can be added midway to adjust the ionic solution, thereby optimizing the performance of the device.
The invention further provides a preparation method and application of the liquid memristor.
The technical scheme is as follows: in order to achieve the above object, a liquid memristor according to the present invention is a device formed by putting a metal electrode into a solution, the solution is an ionic solution formed by dissolving lead halide in an organic solvent, the lead halide provides an ion source in a device structure, and lead ions freely and smoothly move along with the buffering effect of the organic solvent.
Wherein the metal electrode comprises any one of copper, aluminum, gold, silver, molybdenum, niobium, palladium, platinum, tantalum, ruthenium or tungsten. Preferably, copper may be used.
Preferably, the lead halide is lead iodide, lead bromide or lead chloride. Most preferably, lead iodide may be used.
Preferably, the organic solvent is any one of dimethylformamide, toluene, acetone, chloroform, dichloromethane, chloroform, tetrahydrofuran, styrene, or pyridine.
Preferably, the concentration of the lead halide in the organic solvent is 5-15 mg/ml. The liquid memristor can regulate and control the memristive performance by adjusting the concentration of the solution, and specifically, the liquid memristor can be tested by adopting lead iodide, lead bromide or lead chloride liquid memristors with the concentrations of 5mg/ml, 10mg/ml and 15mg/ml, and the memristive characteristics of the liquid memristor are more obvious as the concentration of the solution increases, mainly due to the fact that the generation of filiform conductance is promoted by the increase of iodide ions in the solution.
The device is a filamentous conductance type memristor, the volt-ampere characteristic curve of the device presents obvious hysteresis, and continuous and stable memristor characteristics are displayed in the process of a conducting state.
Further, the liquid memristor presents smooth and long-term memristive behaviors, the device has high stability, and biological synapse function simulation can be carried out.
The liquid memristor can regulate and control memristive performance by adjusting the position of the electrode.
The lead ion orientation of the liquid memristor can be controlled through the movement of the electrodes, and meanwhile, the distance between the electrodes is shortened or increased, so that the growth rate of the filamentous conductance can be influenced, and the memristor performance of the device can be regulated and controlled. Because the lead ions move along the copper electrode, changing the position of the electrode changes the orientation of the lead ions; shortening or increasing the distance of the electrodes leads to the change of the potential difference, can influence the moving speed of lead ions, and can effectively solve the problems that the existing solid memristor cannot accurately control the growth position, the orientation, the speed and other factors of the movement of ions in the solid substance.
Preferably, the solution can be added with other ion species besides lead halide, including one or more of sodium ion, potassium ion, copper ion, iron ion, ferrous ion, ammonium ion, sulfate ion and carbonate ion, so as to regulate and control the memristive performance.
Preferably, the solution contains an organic amine in addition to the lead halide. Organic amine is doped in the body memristor, so that the memristor characteristic of the device can be inhibited. In a neural network, the organic amine can simulate the effect of an inhibitory factor on nerve activity, and the lead iodide liquid memristor can simulate the effect of an excitatory factor.
The preparation method of the liquid memristor is characterized by comprising the following steps of:
(1) the metal wire is used as an electrode of the liquid memristor, and the metal electrode needs to be cleaned before being put into the solution;
(2) an ionic solution formed by dissolving lead halide in an organic solvent;
(3) pouring the prepared solution into a vessel, fixing a metal wire, and connecting the metal wire with a probe station; measured using a semiconductor parameter analyzer.
And (2) cleaning the substrate in the step (1) by acetone, ethanol and deionized water in sequence and drying.
Wherein, the metal wires are fixed in the step (3) by immersing two metal wires in the solution for 1cm, and the distance between the two metal wires is about 1-2cm
The liquid memristor is applied to synaptic function simulation of enhancing inhibition, learning forgetting, time-dependent plasticity, frequency-dependent plasticity, short-term memory, long-term memory and synaptic plasticity.
Furthermore, researches in the fields of neural networks and artificial intelligence are further expanded through the application of the memristor characteristics of the liquid memristor device in synapse function simulation such as enhancement inhibition, learning forgetting, time-dependent plasticity, frequency-dependent plasticity, short-term memory, long-term memory and synapse plasticity.
According to the invention, a lead halide such as lead iodide is dissolved in Dimethylformamide (DMF) to form an ionic solution with a proper concentration, and a metal electrode such as a fine copper wire is put into the ionic solution to be used as an electrode, so that the liquid memristor device is prepared. The liquid memristor is based on a filamentous conductance mechanism, wherein an electrode is used for being electrically connected with an external power supply; the solution is used for providing an ion source and realizing the transmission process of ions.
The memristor shows continuous and stable memristive characteristics in the process of a conductive state, and meanwhile, the memristive behavior of the device keeps stably increasing under the condition of up to 50 times of cyclic voltage scanning until the conductive wire reaches an electrode, which is mainly due to the fact that internal ions can freely and stably move along with the buffering action of an organic solvent, and the smooth and long-term memristive behavior means that the device has a controllable adjusting space and excellent persistence. The liquid memristor can flexibly adjust the concentration of an ionic solution, the ion species and the position of an electrode. Memristors can simulate specific synaptic functions with different forms of electrical signals, and can also tune internal structural factors of the fluid device for more advanced neural simulation functions, including synaptic plasticity. Therefore, the liquid memristor with the characteristic of flexible regulation opens up a new way for realizing multifunctional synaptic plasticity, and further expands the application of the fields of neural networks and artificial intelligence.
Has the advantages that: compared with the prior art, the invention has the following advantages:
1. the liquid memristor has the characteristics of simple structural design, stable performance and flexible regulation and control, and can provide technical reserve and reliable prototype devices for the fields of constructing low-cost, solution-processable and bio-integratable neural networks and artificial intelligence.
2. The liquid memristor can flexibly adjust the concentration of an ionic solution, the ion type and the position of an electrode. The electrical properties of the memristor are modulated by regulating and controlling the solution concentration, the ion species and the electrode position. Different forms of electrical signals can be used to simulate specific synaptic functions, and functional simulation of excitatory and inhibitory factors in neural networks can be performed.
3. The liquid memristor can adjust internal structural factors of a liquid device to be used for a higher-level nerve simulation function, and the liquid memristor which is characterized by flexible adjustment opens up a new way for realizing multifunctional synaptic plasticity, so that the application of the fields of neural networks and artificial intelligence can be further expanded.
Drawings
FIG. 1 is a device structure diagram of a lead iodide liquid memristor;
FIG. 2 is a schematic diagram of an IV curve of a lead iodide liquid memristor under an applied periodic voltage sweep;
FIG. 3 is a schematic diagram of an IV curve of a lead iodide liquid memristor at different scan rates;
FIG. 4 is a dynamic formation process of an IV characteristic curve and filamentous conductance of a lead iodide liquid memristor at different stages;
FIG. 5 shows memristive characteristics of lead iodide liquid memristors in solutions of different concentrations;
FIG. 6 is a schematic graph of an IV curve of an organic amine liquid memristor under periodic scanning;
fig. 7 is a schematic graph of a periodic scan IV curve of a liquid memristor under doping of lead iodide and an organic amine.
Detailed Description
The invention is further illustrated by the following figures and examples.
Example 1
(1) Taking a copper wire as an electrode of the body memristor, cleaning the copper electrode before putting the copper electrode into a solution, and specifically cleaning and drying the copper electrode by acetone, ethanol and deionized water in sequence;
(2) preparing a solution, dissolving lead iodide in Dimethylformamide (DMF) to form a solution with the concentration of 10 mg/ml;
(3) pouring the prepared solution into a glass dish, then immersing two fine copper wires in the solution for 1cm, and finally connecting the fine copper wires with a probe station, wherein the distance between the two fine copper wires is about 1 cm.
The test portion was measured using a test software Keithley4200 semiconductor parameter analyzer, all measurements being performed under normal ambient conditions.
The device structure of the lead iodide liquid memristor prepared in this example is shown in fig. 1.
The lead ions in the liquid memristor can freely and stably move along with the buffering effect of the organic solvent, a smooth and long-term memristive behavior is presented, the memristor presents gradual change and smooth memristive performance, the device has high stability, and the memristive performance can be modulated by flexibly adjusting the concentration of the ionic solution and the position of the electrode. Not only can different forms of electrical signals be used to simulate a particular synaptic function, but internal structural factors of the fluid device can also be adjusted for more advanced neuromodulation functions.
The metal electrode in this embodiment may be replaced with aluminum, gold, silver, molybdenum, niobium, palladium, platinum, tantalum, ruthenium, or tungsten. Lead iodide in the liquid memristor can be replaced by lead bromide or lead chloride, and the organic solvent can be replaced by toluene, acetone, chloroform, dichloromethane, trichloromethane, tetrahydrofuran, styrene or pyridine.
Example 2
(1) Taking a copper wire as an electrode of the body memristor, cleaning the copper electrode before putting the copper electrode into a solution, and specifically cleaning and drying the copper electrode by acetone, ethanol and deionized water in sequence;
(2) preparing a solution, dissolving lead iodide in Dimethylformamide (DMF) to form a solution with the concentration of 10mg/ml, and adding organic amine to the solution with the final concentration of 10 mg/ml;
(3) pouring the prepared solution into a glass dish, then immersing two fine copper wires in the solution for 1cm, and finally connecting the fine copper wires with a probe station, wherein the distance between the two fine copper wires is about 1 cm.
The test portion was measured using a test software Keithley4200 semiconductor parameter analyzer, all measurements being performed under normal ambient conditions.
The liquid memristors prepared in this example were characterized by an overall conductivity that did not continue to increase or decrease under the cyclic voltage sweep, primarily due to accumulated positive ions (CH) near the cathode3NH3 +) Effectively inhibit Pb2+The reversible recovery of the hysteresis curve indicates that neural excitability is neutralized by inhibitory properties. In a neural network, the organic amine liquid memristor can simulate the action of an inhibitory factor in nerve activity, PbI2The liquid memristor may mimic the effect of an excitatory factor. Excitatory and inhibitory activities are fundamental neural activities that coordinate and constrain each other, forming a complex and diverse information processing and neural activities. Meanwhile, the added ammonium ions in the embodiment can be replaced by one or more of sodium ions, potassium ions, copper ions, iron ions, ferrous ions, sulfate ions and carbonate ions to regulate and control the memristive performance.
Example 3
Example 3 the same procedure as in example 1 was followed except that lead iodide was replaced with an organic amine, the organic amine was dissolved in DMF to form an ionic solution (10mg/ml) of appropriate concentration, and a fine copper wire was put into the solution as an electrode.
Example 4
Example 4 the same preparation method as example 1 was conducted except that the organic amine in step (2) of example 2 was replaced with sodium chloride.
Example 5
Example 5 the same preparation process as in example 1 was conducted except that the organic amine in step (2) of example 2 was replaced with potassium chloride.
Example 6
Example 5 the same preparation process as in example 1 was conducted except that the organic amine in step (2) of example 2 was replaced with copper sulfate.
Example 7
(1) Taking an aluminum wire as an electrode of the body memristor, cleaning the aluminum electrode before putting the aluminum electrode into a solution, and specifically, sequentially cleaning the aluminum electrode by acetone, ethanol and deionized water and drying the aluminum electrode;
(2) preparing a solution, dissolving lead bromide in toluene to form a solution with the concentration of 5 mg/ml;
(3) pouring the prepared solution into a glass dish, then immersing two aluminum filaments in the solution for 1cm, and connecting the aluminum filaments with a probe station, wherein the distance between the two aluminum filaments is about 2 cm.
The test portion was measured using a test software Keithley4200 semiconductor parameter analyzer, all measurements being performed under normal ambient conditions.
Example 8
(1) Taking a molybdenum wire as an electrode of the body memristor, wherein the molybdenum electrode needs to be cleaned before being put into a solution, and is cleaned and dried by acetone, ethanol and deionized water in sequence;
(2) preparing a solution, dissolving lead bromide in chloroform to form a solution with the concentration of 5 mg/ml;
(3) the prepared solution was poured into a glass dish, then two thin molybdenum wires were immersed 1cm in the solution with a distance of about 2cm between them, and finally the thin molybdenum wires were connected to a probe station.
The test portion was measured using a test software Keithley4200 semiconductor parameter analyzer, all measurements being performed under normal ambient conditions.
Example 9
(1) Taking a silver wire as an electrode of the body memristor, cleaning the silver electrode before putting the silver electrode into a solution, and specifically cleaning and drying the silver electrode by acetone, ethanol and deionized water in sequence;
(2) preparing a solution, dissolving lead bromide in acetone to form a solution with the concentration of 15 mg/ml;
(3) the prepared solution was poured into a glass dish, then two silver filaments were immersed 1cm in the solution with a distance of about 2cm between them, and finally the filaments were connected to a probe station.
The test portion was measured using a test software Keithley4200 semiconductor parameter analyzer, all measurements being performed under normal ambient conditions.
Test example 1
The current-voltage characteristic curves of the lead iodide liquid memristor of example 1 under forward periodic voltage sweep were examined, with operating voltages of +6V and +3V, respectively. The connection of the copper electrodes at the two ends and the probe of Keithley4200 is ensured, the test software Keithley4200 semiconductor parameter analyzer is used for measurement, a periodic voltage-current scanning carried by the software is started, a large voltage of 0-6-0V is applied to the device, if the voltage is gradually increased in an upward trend (namely each circle), the voltage is gradually reduced until the upward trend is measured by a minimum voltage (0-3-0V), namely a threshold voltage, and at the large voltage, the memristive behavior is more obvious, namely the current change is larger.
The IV curve of the lead iodide liquid memristor under the applied periodic voltage sweep is shown in fig. 2. A memristor is a resistor, similar to a biological synapse, that can effect a tunable transformation of resistance state depending on the operation of an applied voltage or current. When a continuous positive scanning voltage (0-3-0V) is applied to the device, the voltage-current curve of the device shows obvious hysteresis characteristics, and when a larger periodic voltage (0-6-0V) scanning is applied to the device, the current tends to gradually increase along with the increase of the applied voltage. In the liquid memristive device, the conductivity of the device can be analogized to the synaptic weight, and the similarity of the nonlinear transmission characteristics of the liquid memristor and the biological nerve synapses can be known from the test result in FIG. 2.
Test example 2
Examining the IV characteristic curves of the lead iodide liquid memristor in example 1 under different scanning steps, wherein the scanning steps are 0.1V/s and 0.3V/s respectively, ensuring that the copper electrodes at two ends are connected with a probe of Keithley4200, measuring by using a test software Keithley4200 semiconductor parameter analyzer, applying constant 0-6-0V periodic voltage scanning to the device, and researching the memristive performance under different scanning steps, wherein the scanning steps are 0.1V/s and 0.3V/s respectively.
The IV curves of the lead iodide liquid memristor at different scan rates are shown in fig. 3. As the scan step rate decreases in fig. 3, the conductance of the liquid memristor gradually increases, primarily due to the change in total flowing charge over a slow period. The IV curves of the lead iodide liquid memristor at different scan rates are shown in fig. 3. As fig. 3 shows, the conductivity of the liquid memristor gradually decreases with the increase of the scan step, which is mainly due to that the larger scan step can excite the smaller total flow of lead ions, thereby resulting in the decrease of the conductivity and the hysteresis area.
Test example 3
Examine the IV characteristic curve of the lead iodide liquid memristor of example 1 at different stages and the dynamic formation process of its filamentous conductance. The two-terminal copper electrodes were secured to the probes of Keithley4200 and a constant 0-10-0V periodic voltage sweep was applied to the device while maintaining a constant sweep step size of 0.1V/s as measured using the test software Keithley4200 semiconductor parameter Analyzer.
As shown in FIG. 4, a continuous periodic sweep (0-10-0V) is applied to a liquid memristor whose electrical conductivity remains steadily increasing over 10, 20, 30, 40, and 50 cycle sweep phases, and does not stop growing until a conductive bridge connects the electrodes. In the long-term scanning example of the liquid memristor, the liquid memristor has excellent smooth response and gradual-change conducting characteristics, and meanwhile, flexible electrode position adjustment and good long-time-course memristor characteristics are displayed in the liquid memristor.
Test example 4
The memristor characteristics of the lead iodide liquid memristor of example 1 in solutions of different concentrations were examined.
Three cycles of voltage current sweep (0-15-0V) were applied to the initial lead iodide liquid memristor, and after the end of the measurement, 1 drop (about 0.05ml) of a 20mg/ml higher concentration lead iodide solution was added, again with three cycles of voltage current sweep applied, 3 drops of the same procedure, using the test software Keithley4200 semiconductor parameter analyzer measurement.
Given that memristive behavior is strongly dependent on ionic properties, memristive modulation is investigated by adjusting ion concentrations for specific neural functions. As shown in FIG. 5, the initial solution concentration was 5mg/ml, the added solution concentration was 20mg/ml, and the total conductivity state increased by about 2-fold after the addition of 1 drop (about 0.05ml) of the higher concentration ionic solution. After the addition of 3 drops (about 0.15ml), the overall current level increased by about 6-fold. The improvement of the memristor memristive performance is mainly attributed to the supplement of the high-concentration lead ion solution. In neural networks, concentration-dependent memory enhancement is a specific modulation that mimics neural enhancement from the perspective of neurotransmitters, and lead ions in liquid memristors correspond to excitatory neurotransmitters.
Test example 5
Examine the IV curve of example 3 organic amine liquid memristors under periodic scanning.
Four cycle voltage current sweeps (0-6-0v) were performed on solutions containing only organic amine as measured using the test software Keithley4200 semiconductor parameter analyzer.
Organic amine liquid memristor and PbI2The ions in solution are essentially different, CH3NH3Cations and anions in the Cl solution are difficult to reduce and oxidize. As shown in fig. 6, characterized by a gradually decreasing current trend under periodic voltage sweeps, this gradually suppressed conductance is due to migration, accumulation and polarization of internal ions. In a neural network, the organic amine liquid memristor can simulate the action of an inhibitory factor in nerve activity, and the lead iodide liquid memristor can simulate the action of an exciting factor. Excitatory and inhibitory activities are fundamental neural activities that coordinate and constrain each other, forming a complex and diverse information processing and neural activities.
Test example 6
Examine the periodic scan IV curve of a liquid memristor under doping of lead iodide and an organic amine in example 2.
Four cycle voltage current sweeps (0-10-0v) were measured on the doped liquid memristor rows using the test software Keithley4200 semiconductor parameter analyzer.
The memristive properties were adjusted by dropping a certain amount of organic amine solution (about 0.5 ml) into PbI2 solution (about 1 ml). As shown in FIG. 7, the overall conductivity of the liquid memristor does not continue to increase or decrease under the cyclic voltage sweep, primarily due to the accumulated positive ions (CH) near the cathode3NH3+) Effectively inhibit Pb2+The reversible recovery of the hysteresis curve indicates that neural excitability is neutralized by inhibitory properties. For the neural activity of liquid neurons, the regulation of ionic solutions of different concentrations and different species provides a new approach for achieving neural regulation and further strengthens the link between electronic and neural information processing.
Claims (10)
1. A liquid memristor is characterized in that a device is formed by putting a metal electrode into a solution, the solution is an ionic solution formed by dissolving lead halide in an organic solvent, the lead halide provides an ion source in a device structure, and the lead ions freely and smoothly move along with the buffering effect of the organic solvent.
2. The liquid memristor of claim 1, wherein the metal electrode comprises any one of copper, aluminum, gold, silver, molybdenum, niobium, palladium, platinum, tantalum, ruthenium, or tungsten.
3. The liquid memristor of claim 1, wherein the lead halide is lead iodide, lead bromide, or lead chloride.
4. The liquid memristor according to claim 1, wherein the organic solvent is any one of dimethylformamide, toluene, acetone, chloroform, dichloromethane, chloroform, tetrahydrofuran, styrene, or pyridine.
5. The liquid memristor according to claim 1, wherein a concentration of the lead halide in the organic solvent is 5-15 mg/mL.
6. The liquid memristor according to claim 1, wherein the solution may be added with one or more of sodium ions, potassium ions, copper ions, iron ions, ferrous ions, ammonium ions, sulfate ions, and carbonate ions in addition to lead halide to regulate memristive performance.
7. The liquid memristor of claim 1, wherein the solution contains an organic amine in addition to the lead halide.
8. The method for preparing the liquid memristor according to claim 1, characterized by comprising the following steps:
(1) the metal wire is used as an electrode of the liquid memristor, and the metal electrode needs to be cleaned before being put into the solution; (2) an ionic solution formed by dissolving lead halide in an organic solvent;
(3) pouring the prepared solution into a vessel, fixing a metal wire, and connecting the metal wire with a probe station; measured using a semiconductor parameter analyzer.
9. The preparation method of claim 8, wherein the cleaning in step (1) is sequentially performed by cleaning with acetone, ethanol, deionized water and drying.
10. Use of the liquid memristor of claim 1 in synaptic function simulations to enhance inhibition, learning forgetfulness, time-dependent plasticity, frequency-dependent plasticity, short-term memory, long-term memory, and synaptic plasticity.
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