CN109143745B - Luminescent concentrator, luminescent device and projection light source - Google Patents

Luminescent concentrator, luminescent device and projection light source Download PDF

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CN109143745B
CN109143745B CN201710500490.5A CN201710500490A CN109143745B CN 109143745 B CN109143745 B CN 109143745B CN 201710500490 A CN201710500490 A CN 201710500490A CN 109143745 B CN109143745 B CN 109143745B
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light
luminescent concentrator
luminescent
concentrator
core layer
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CN109143745A (en
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徐梦梦
胡飞
李屹
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Shenzhen Appotronics Corp Ltd
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Appotronics Corp Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings

Abstract

The invention discloses a light emitting collector, a light emitting device and a projection light source. The luminescent concentrator has a light exit surface, a light entrance surface and an opposite side surface opposite to the light exit surface. The luminescent concentrator has a stacked multilayer structure. The multilayer structure includes at least one core layer at the center and clad layers laminated on both sides of the at least one core layer, the clad layers being capable of transmitting light having a first wavelength distribution, the at least one core layer being capable of converting light having the first wavelength distribution into light having a second wavelength distribution. The opposite side surface is provided with a light shielding member preventing light from leaking, and the area of the light incident surface is larger than that of the light exit surface. The light emitting device and the projection light source are provided with the light emitting concentrator and the light source. According to the present invention, it is possible to suppress a drastic change in the temperature of the light emitting concentrator, and prevent a device failure due to a drastic change in the internal temperature. In addition, the distribution of the thermal field in the luminescent concentrator can be more uniform, and the thermal effect is reduced.

Description

Luminescent concentrator, luminescent device and projection light source
Technical Field
The invention relates to a luminescent concentrator, a luminescent device and a projection light source. In particular, the invention relates to luminescent concentrators with a uniform distribution of the thermal field and to light emitting devices and projection light sources using such luminescent concentrators.
Background
In recent years, in the fields of spot lighting, digital light projection, and the like, how to obtain a light source having higher luminance and more energy saving has been a focus of research. Among them, light emitting devices using wavelength converters that convert light of shorter wavelength into light of longer wavelength in highly transparent luminescent materials have become a major research direction.
For example, the hld (high Lumen sensitivity) light source developed by philips converts light having a shorter wavelength into light having a longer wavelength using a highly transparent luminescent material, and extracts the light having the longer wavelength on a small area surface, thereby achieving high-luminance light output with a small etendue. In this light source, the highly transparent luminescent material serves both as light concentrating and wavelength converting, and may be referred to as a luminescent concentrator.
The luminescent concentrator as described above causes heat to be concentrated inside it during wavelength conversion due to stokes shift, resulting in a more severe thermal effect. In the prior art, the luminescent concentrator is typically cooled using an ambient cooling system. However, this method can cause the thermal field inside the luminescent concentrator to be unevenly distributed, resulting in severe thermal effects, which can affect the optical and mechanical properties of the device.
Disclosure of Invention
In view of the above problems, it is desirable to provide a luminescent concentrator with uniform internal temperature transition and reduced thermal effects and a light emitting device using the luminescent concentrator.
According to an embodiment of the present invention, a luminescent concentrator is disclosed having a light exit surface, a light entrance surface, and an opposite side surface opposite to the light exit surface, and having a stacked multilayer structure. The multilayer structure includes at least one core layer at the center and clad layers laminated on both sides of the at least one core layer, the clad layers being capable of transmitting light having a first wavelength distribution, the at least one core layer being capable of converting light having the first wavelength distribution into light having a second wavelength distribution. The opposite side surface is provided with a light shielding member preventing light from leaking, and the area of the light incident surface is larger than that of the light exit surface.
Preferably, in the luminescent concentrator, when the at least one core layer is an odd number of layers, the doping concentration of the rare earth element ions is gradually decreased from the center to both sides of the luminescent concentrator in the stacking direction of the multilayer structure; when the at least one core layer is an even number of layers, the doping concentration of the rare earth element ions is gradually decreased from the center of the luminescent concentrator to both sides or from the center of one core layer closest to the center of the luminescent concentrator to both sides in the stacking direction of the multilayer structure.
In some embodiments, preferably, the at least one core layer is composed of two or more luminescent ceramic layers having different doping concentrations of rare earth element ions. In other embodiments, preferably, the at least one core layer comprises two or more different luminescent ceramic layers. For example, each luminescent ceramic layer may be formed from a luminescent ceramic material doped with different rare earth element ions.
Preferably, the light shielding element may be a specular reflective film. Furthermore, the luminescent concentrator may additionally be provided with a reflective element arranged on at least one surface other than the light entrance surface and the light exit surface. For example, the reflective element is a specularly reflective layer having a reflectivity of greater than 95%; alternatively, the reflective element is a layer of diffuse reflective material having a reflectivity of greater than 90%.
Preferably, an optical film that transmits only light having the first optical distribution is further provided at the light incident surface of the luminescent concentrator. In some implementations, the optical film can be a dichroic film that is transmissive to light having the first wavelength distribution. Alternatively, the optical film may be an angle-selective filter film that can transmit only light having the first wavelength distribution incident at an incident angle in a predetermined range.
In some embodiments, the luminescent concentrator may have a wedge shape such that the area of the light exit surface is smaller than the area of the surface opposite thereto.
Preferably, the cladding is Al2O3A ceramic layer.
Preferably, a light coupling element is arranged at the light exit surface, which is optically connected to the optical concentrator, the light coupling element having a refractive index which is equal to or lower than the lowest refractive index of the core layer and the cladding layer of the luminescent concentrator.
The invention also discloses a light emitting device provided with an arbitrary luminescent concentrator and a light source as described above. The light source is arranged towards the light entrance surface of the luminescent concentrator, the light source being capable of emitting light having the first wavelength distribution.
The invention also discloses a projection light source which is provided with the random light-emitting collector and the light source.
According to the invention, the luminescent concentrator has a multilayer ceramic structure comprising a core layer and a cladding layer, and in the multilayer structure the core layer is a luminescent ceramic doped with a rare earth element and the cladding layer is a non-luminescent ceramic having a crystal structure and physicochemical properties similar to those of the core layer but a higher thermal conductivity. Due to the multilayer structure, the core layer which generates heat in the light emitting process is not in direct contact with the surrounding cooling system, and the cladding layer plays a role in restraining the core layer temperature from generating severe change between the core layer and the surrounding cooling system, so that the device failure caused by the severe change of the internal temperature is prevented. In addition, the doping concentration of the rare earth element ions is gradually decreased from the center to two sides in the height direction, so that the distribution of the quantum dots which generate heat inside the luminescence collector is more uniform, the distribution of a thermal field is more uniform, and the thermal effect is reduced. It is to be understood that the advantageous effects of the present invention are not limited to the above-described effects, but may be any of the advantageous effects described herein.
Drawings
Fig. 1 is a schematic view showing a structure of a light emitting apparatus according to a first embodiment of the present invention.
Fig. 2 is a side view and a top view of a multilayer structure of a luminescent concentrator in the light emitting device shown in fig. 1.
Fig. 3 is a schematic configuration diagram showing a modified example of the light emitting apparatus according to the first embodiment of the present invention.
Fig. 4 is a schematic view showing the Ce ion concentration distribution in the thickness direction of the ceramic in the luminescent concentrator of the light emitting device according to the first embodiment of the present invention.
Fig. 5 is a side view and a top view of a multilayer structure of a luminescent concentrator of a light emitting device according to a second embodiment of the invention.
Fig. 6 is a schematic view showing the Ce ion concentration distribution in the thickness direction of the ceramic in the luminescent concentrator of the light emitting device according to the second embodiment of the present invention.
Fig. 7 is a side view and a top view of a multilayer structure of a luminescent concentrator of a light emitting device according to a third embodiment of the invention.
Fig. 8 is a schematic view showing a Ce ion concentration distribution in a thickness direction of the ceramic in the luminescent concentrator of the light emitting device according to the third embodiment of the present invention.
Fig. 9 is a schematic view showing a concentration distribution of Ce ions in a thickness direction of a ceramic in another luminescent concentrator of a light emitting device according to a third embodiment of the present invention.
Fig. 10 is a side view and a top view of a multilayer structure of a luminescent concentrator of a light emitting device according to a fourth embodiment of the invention.
Detailed Description
Hereinafter, specific embodiments according to the present invention will be described in detail with reference to the accompanying drawings. It is emphasized that all dimensions in the figures are merely schematic and not necessarily to scale, thus not limiting. For example, it should be understood that the thicknesses and thickness ratios of the layers in the multilayer structure of the luminescent concentrator illustrated are not shown in actual size and ratio, but merely for convenience of illustration.
First embodiment
Fig. 1 is a schematic view showing a structure of a light emitting apparatus according to a first embodiment of the present invention. As shown in fig. 1, the light emitting device comprises a light source 1 and a luminescent concentrator 2. The light source 1 comprises a substrate 10 and at least one solid state light source 11 arranged on the substrate. The solid-state light source 11 may in principle be any type of point light source, such as a Light Emitting Diode (LED), a laser diode, or an Organic Light Emitting Diode (OLED), etc. In the case where a plurality of solid-state light sources 11 are provided, the plurality of solid-state light sources 11 are arranged in the form of a two-dimensional light emitting array. In the present example, a laser light emitting array constituted by laser diodes is exemplified, and as shown in fig. 1, light emitted from a plurality of solid-state light sources 11 in the light emitting array is irradiated to a light incident surface 211 of a light emitting concentrator 2. Furthermore, it is also possible to guide the light emitted by a plurality of laser diodes into optical fibers and then separately to the light entrance surface of the luminescent concentrator 2, or the light from the light source 1 can be guided with a specific light distribution to the light entrance surface of the luminescent concentrator 2 by means of light shaping means. Each solid-state light source 11 is capable of emitting light having a first wavelength distribution, such as, but not limited to, ultraviolet, blue, green, yellow, or red light. For example, when the solid-state light source 11 is a blue light source, the first wavelength distribution is 300 to 550nm, preferably 380 to 480 nm. When the solid-state light source 11 is an Ultraviolet (UV) or violet light source, the first wavelength distribution is 420nm or less. In addition, when the solid-state light source 11 is a red light source, the first wavelength distribution is 600 to 800 nm. When a plurality of solid-state light sources 11 are included, the plurality of solid-state light sources 11 may also be two or more solid-state light sources 11 of different colors.
As shown in fig. 2, the luminescent concentrator 2 is typically a rod-like or rod-like device having a height H, a width W and a length L extending in mutually perpendicular directions. Here, the horizontal direction in fig. 1 is referred to as the longitudinal direction of the light emitting collector 2, the vertical direction in fig. 1 is referred to as the height direction of the light emitting collector 2, and the direction perpendicular to the paper surface in fig. 1 is referred to as the width direction of the light emitting collector 2. The luminescent concentrator 2 has a multilayer ceramic laminated structure in which a core layer and a cladding layer are laminated in the height direction of the luminescent concentrator 2. Incident light emitted from the light source 1 impinges on the outer surface of the outermost cladding layer of the luminescent concentrator 2. In other words, the outer surface of the outermost cladding layer of the luminescent concentrator 2 is the light entrance surface of the luminescent concentrator 2. Fig. 1 shows a three-layer laminated structure in which the luminescent concentrator 2 is laminated with a clad layer 21, a core layer 20, and a clad layer 22 in this order in the height direction, and an outer surface 211 of the clad layer 21 is a light incident surface of the luminescent concentrator 2. It is to be understood that the light sources 1 may be arranged on both sides of the luminescent concentrator 2 such that incident light is incident from both sides of the luminescent concentrator 2 simultaneously. In this case, the outer surface 211 of the cladding 21 and the outer surface 213 of the cladding 22 are both light incident surfaces of the luminescent concentrator 2. One end surface 212 of the luminescent concentrator 2 extending in the height direction and the width direction is a light exit surface. The other end surface 212 of the luminescent concentrator 2 opposite to the light exit surface 212 is referred to as opposite side surface and is provided with a light shielding element, such as a specular reflective film, to ensure that light in the luminescent concentrator 2 does not escape from the opposite side surface 214. It is to be understood that the luminescent concentrator 2 is a rod-like or rod-like device, and therefore the area of the light exit surface 212 and the opposite side surface 214 is significantly smaller than the area of the light entrance surfaces 211 and 213. Furthermore, preferably, the above-mentioned light-shielding element may also be provided at other surfaces of the luminescent concentrator 2 than the light entrance surface, the light exit surface and the opposite side surface, to prevent light beams travelling in the luminescent concentrator 2 from escaping at these surfaces due to no total reflection taking place. Alternatively, other surfaces than the light entrance surface, the light exit surface and the opposite side surface of the luminescent concentrator 2 may also be roughened to further increase the probability of total reflection of the light beam.
It is to be understood that the cross-section of the luminescent concentrator 2 perpendicular to the length direction may have a variety of shapes, e.g. square, rectangular, circular, triangular, polygonal, etc. Furthermore, the luminescent concentrator 2 in this embodiment may also be arranged such that the area of its cross-section perpendicular to the length direction gradually decreases as it approaches the light exit surface, so that the area of the light exit surface is smaller than the area of the surface of the luminescent concentrator 2 opposite to the light exit surface, if desired. For example, the luminescent concentrator 2 may have the shape of a wedge or a truncated cone. This enables the area of the light exit surface to be further reduced to achieve better light-emitting efficiency.
In the multilayer laminated structure of the luminescent concentrator 2, the core layer 20 is made of a luminescent ceramic material capable of converting incident light of a first wavelength distribution into light of a second wavelength distribution. For example, the core layer 20 is yttrium aluminum garnet (YAG, Y) doped with a rare earth element3Al5O12) Or lutetium aluminum garnet (LuAG, Lu)3Al5O12) A ceramic. The rare earth element dopant ion may be Ce3+、Pr3+、Nd3+、Sm3+、Eu3+、Tb3+、Dy3+、Ho3+、Er3+、Tm3+、Yb3+And the like. Among them, Ce is preferably used3+. Cladding layer21 and 22 are non-luminescent ceramics with a crystal structure and physicochemical properties similar to those of the core layer but with a higher thermal conductivity. In this example, the cladding layers 21 and 22 are formed of YAG ceramic. It is to be noted that the YAG ceramics used for forming the cladding layers 21 and 22 are not originally doped with the above-mentioned rare earth elements, but in the preparation process of the luminescent concentrator 2 (see below for details), dopant ions contained in the core layer 20 are diffused into the cladding layers 21 and 22 so that the doping concentration of the rare earth elements gradually decreases from the center of the core layer to the outside in the lamination direction of the multilayer laminated structure of the luminescent concentrator 2.
Incident light having a first wavelength distribution enters the luminescent concentrator 2 from the light entrance surface 211 and/or 213, passes through the cladding layer 21 or 22 to reach the core layer 20. At least a portion of the incident light having the first wavelength distribution is converted into stimulated light having a second wavelength distribution in the core layer 20. The excited light propagates in the luminescent concentrator and is guided to the light exit surface 212 by the shading elements of the opposite side surface 214 and by total reflection between the different media, and finally exits from the light exit surface 212.
Furthermore, a reflective element may additionally be provided on at least one surface of the luminescent concentrator 2 other than the light entrance surface and the light exit surface. The reflective element 3 may be a specular reflective layer, such as a highly reflective silver layer or a highly reflective aluminum layer, preferably with a reflectivity of more than 95%; it may also be, for example, TiO2、BaSO4Or Al2O3The reflectivity of the diffuse reflection material layer formed by the diffuse reflection material is preferably more than 90%. Such a reflecting element is in non-optical contact with the luminescent concentrator 2, reflecting light escaping from the luminescent concentrator 2 without satisfying the conditions for total reflection back to the luminescent concentrator 2 and finally towards the light exit surface 212, increasing the efficiency of the light conduction. In fig. 3 is shown an example in which the reflective element 3 is provided on the outer surface 213 and the end surface 214 of the cladding 22 in the case where the light source 1 illuminates the above-described luminescent concentrator 2 only from the light incident surface 211 side. Further, in order to improve the extraction efficiency of light, a light coupling element or a light coupling structure may be provided at the light exit surface 212. The light coupling element may be an optical glue, a lens or an array of lenses having a refractive index equal to or lower than the refractive index of the core layers and the cladding layers of the luminescent concentrator 2Low refractive index and is optically connected to the optical concentrator. In addition, an optical film, which is only transmissive for light having the first wavelength distribution, may be provided or coated at the light entrance face of the light emitting concentrator 2. For example, the optical film may be a dichroic film, such that incident light of a first wavelength distribution emitted from the light source can pass through the dichroic film into the luminescent concentrator, while stimulated light of a second wavelength distribution generated in the luminescent concentrator is totally reflected at the dichroic film. Alternatively, an angle-selective filter may be coated on the light incident surface (211, 213) of the polished ceramic, which transmits only the light beam of the first wavelength distribution incident at an incident angle in a predetermined range. For example, the angle-selective filter film may be an angle-selective blue light-transmitting film that can transmit only blue light incident at an incident angle in a range of-8.5 ° to +8.5 °. It should be understood that the above ranges of angles of incidence are merely examples, and that other ranges of angles are possible.
The luminescence concentrator in the prior art has a single-layer structure, so that when the outer surface of the luminescence concentrator contacts with the surrounding cooling system, the outer surface of the luminescence concentrator is rapidly cooled down, so that the difference between the internal temperature and the external temperature of the luminescence concentrator is large, and the temperature is rapidly changed, which not only causes the uneven distribution of the thermal field inside the luminescence concentrator, but also may cause the device to be broken due to the rapid temperature change. In the present invention, since the luminescent concentrator 2 has a multi-layer structure, when the luminescent concentrator 2 is cooled by using an ambient cooling system, the cladding layer having excellent heat conductivity is in direct contact with the ambient cooling system, and the core layer generating heat during luminescence is not in direct contact with the ambient cooling system. The cladding plays a role in restraining the temperature of the core layer from changing violently between the core layer and the surrounding cooling system, achieves the moderate transition between the temperature of the core layer and the temperature of the surrounding cooling system, and prevents the device fault caused by the violent change of the internal temperature. Furthermore, the rare earth element ions in the luminescent concentrator 2 may be seen as quantum dots generating heat due to the stokes red shift during the wavelength conversion process. In the present invention, the doping concentration of the rare earth element ions in the luminescent concentrator 2 gradually decreases from the center to both sides in the height direction. That is, the distribution of the quantum dots generating heat is gradually decreased from the center to both sides. Thus, the thermal field inside the luminescent concentrator 2 is distributed more evenly, reducing the thermal effect.
In the following, a specific method of manufacturing the luminescent concentrator 2 will be briefly explained.
Respectively according to Y3Al5O12And (Y)1-xCex)3Al5O12(wherein x is 0.001-0.1, and the specific value is determined by theoretical calculation and experimental analysis according to the intensity of the incident light of the light source, the size of the luminescent collector, and the requirements for the color temperature and color coordinate of the product) and the stoichiometric ratio of the high-purity commercial Al is weighed2O3Powder, Y2O3Powder and CeO2And (3) powder. Then, a ceramic body is prepared by using a tape casting process. Wherein, surfactants such as EDS are selected as a dispersing agent, alcohol is selected as a solvent, vinyl polymers (PVA, PVB or PVC) and the like are selected as a binder, and phthalate plasticizers are selected as plasticizers. The preparation method comprises the following specific steps: putting the raw material powder, a solvent and a dispersant into a ball mill for ball milling and mixing; after uniformly mixing, adding a binder and a plasticizer for secondary ball milling and mixing to obtain slurry; then, placing the uniformly mixed slurry in a vacuum system, and removing air bubbles in the slurry; thereafter, the slurry was molded on a casting machine to obtain a casting film, followed by drying at normal temperature for 24 hours. After drying, Y is obtained respectively3Al5O12Precursor casting film of (a) and (Y)1-xCex)3Al5O12Casting a film from the precursor of (1). Next, the precursor cast film is trimmed according to the design dimensions of the luminescent concentrator (length l and width w as shown in fig. 2) to obtain a cast film sheet of corresponding dimensions, which is slightly larger than l × w in consideration of the dimensional shrinkage of the cast film sheet during the subsequent sintering process and the subsequent machining allowance. Specific values for the dimensions can be determined by theoretical simulation in combination with experimental analysis. Then, take n0Sheet (Y)1-xCex)3Al5O12Is laminated and on both sidesRespectively re-laminating n1And n2Tablet Y3Al5O12Casting the membrane from the precursor. Wherein n is0、n1And n2By taking into account the thickness (d) of the layers of the luminescent concentrator to be obtained0、d1、d2) The size shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the core layer and the cladding layer, the subsequent machining allowance and other factors are determined by combining theoretical simulation and experimental results. And then, placing the laminated casting film in an environment of 50-90 ℃ and applying a pressure of 20-80 MPa, so that the laminated casting film can be well combined together. And then, carrying out glue removing treatment for 12 hours at the temperature of 500-900 ℃, and then carrying out cold isostatic pressing at the pressure of 200-300 MPa to obtain the ceramic biscuit with the multilayer structure. And (3) sintering the ceramic biscuit for 5-30 hours at 1650-1850 ℃ in vacuum to obtain the multilayer ceramic with the multilayer laminated structure. During sintering, originally located at n0Sheet (Y)1-xCex)3Al5O12Y with Ce ions facing both sides in the cast film sheet (after sintering, core layer 20)3Al5O12The cast films (after sintering, the claddings 21 and 22) are diffused therein. In the finally obtained multilayer ceramic, the doping concentration of Ce ions is gradually reduced from the center to the surface. Fig. 4 shows a schematic view of the concentration distribution of Ce ions in the height direction in the ceramic of the multilayer structure. Subsequently, the multilayer ceramic obtained by sintering is subjected to a polishing process, obtaining the luminescent concentrator 2.
Second embodiment
Fig. 5 is a side view and a top view of a multilayer structure of a luminescent concentrator of a light emitting device according to a second embodiment of the invention.
The light emitting apparatus according to the second embodiment of the present invention is different from the light emitting apparatus of the first embodiment in that: the core layer in the multilayer structure is composed of n luminescent ceramic layers (n > 2, and n is an odd number) having different rare earth ion doping concentrations, and the more the luminescent ceramic layer closer to the center is, the higher the rare earth ion doping concentration is. Compared to the light emitting device of the first embodiment, the transition of the doping concentration of the rare earth ions is more gradual from the center to the sides of the luminescent concentrator 2, so that the thermal field distribution in the luminescent concentrator 2 is more uniform, further reducing the thermal effect. Except for this, the configuration of the light emitting apparatus is almost the same as that of the first embodiment, and therefore, a repetitive description will be omitted below.
In the following, reference will be made to fig. 5 with the core layer consisting of two YAG with different Ce ion doping concentrations: the case of sintering the Ce luminescent ceramic layer is taken as an example, and a method for manufacturing the luminescent concentrator 2 in this example will be briefly described. In the example shown in fig. 5, 3 core layers are provided, i.e., n is 3.
Respectively according to Y3Al5O12、(Y1-aCea)3Al5O12And (Y)1-bCeb)3Al5O12(wherein x is 0.001 to 0.1, and a>b, the specific value is determined by theoretical calculation and experimental analysis according to the intensity of the incident light of the light source, the size of the luminescent collector, and the requirements on the color temperature and the color coordinate of the product) and the stoichiometric ratio of high-purity commercial Al2O3Powder, Y2O3Powder and CeO2And (3) powder. Then, a ceramic body is prepared by using a tape casting process. Wherein, surfactants such as EDS are selected as a dispersing agent, alcohol is selected as a solvent, vinyl polymers (PVA, PVB or PVC) and the like are selected as a binder, and phthalate plasticizers are selected as plasticizers. The preparation method comprises the following specific steps: putting the raw material powder, a solvent and a dispersant into a ball mill for ball milling and mixing; after uniformly mixing, adding a binder and a plasticizer for secondary ball milling and mixing to obtain slurry; then, placing the uniformly mixed slurry in a vacuum system, and removing air bubbles in the slurry; thereafter, the slurry was molded on a casting machine to obtain a casting film, followed by drying at normal temperature for 24 hours. After drying, Y is obtained respectively3Al5O12(Y) of (A)1-aCea)3Al5O12Precursor casting film of (a) and (Y)1-bCeb)3Al5O12Casting a film from the precursor of (1). Then, according to the hairThe design dimensions of the light concentrator (length l and width w as shown in fig. 5) tailor the precursor cast film to obtain a cast film sheet of corresponding dimensions, which is slightly larger than l x w in consideration of the dimensional shrinkage of the cast film sheet during the subsequent sintering process and the subsequent machining allowance. Specific values for the dimensions can be determined by theoretical simulation in combination with experimental analysis. Then, take n0Sheet (Y)1-aCea)3Al5O12The precursor casting film sheets of (1) are laminated and n are further laminated on both sides as shown in the figure, respectively3And n4Sheet (Y)1-bCeb)3Al5O12And n1And n2Tablet Y3Al5O12Casting the membrane from the precursor. Wherein n is0、n1、n2、n3And n4By taking into account the thickness (d) of the layers of the luminescent concentrator to be obtained0、d1、d2、d3、d4) The size shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the laminated layers, the subsequent machining allowance and other factors are determined by combining theoretical simulation and experimental results. And then, placing the laminated casting film in an environment of 50-90 ℃ and applying a pressure of 20-80 MPa, so that the laminated casting film can be well combined together. And then, carrying out glue removing treatment for 12 hours at the temperature of 500-900 ℃, and then carrying out cold isostatic pressing at the pressure of 200-300 MPa to obtain the ceramic biscuit with the multilayer structure. And (3) sintering the ceramic biscuit for 5-30 hours at 1650-1850 ℃ in vacuum to obtain the multilayer ceramic with the multilayer laminated structure. Compared with the embodiment 1, the core layer is composed of n positioned at the center0Sheet (Y)1-aCea)3Al5O12Cast film and n on both sides3And n4Sheet (Y)1-bCeb)3Al5O12Is formed from a precursor cast film of (a)>b, the diffusion of Ce ions from the core layer to the cladding layer during sintering is more moderate. Thus, as shown in fig. 6, C in the stacking direction in this embodimentThe change of the e ion concentration is more gradual, and the thermal effect can be further reduced.
Third embodiment
In a second embodiment, the core layer in the multilayer structure is composed of an odd number of luminescent ceramic layers having different doping concentrations of rare earth ions. In this case, the more the rare earth ion doping concentration of the luminescent ceramic layer closer to the center is higher, the core layer located at the center has the highest doping concentration. In the third embodiment, the core layer in the multilayer structure is composed of n luminescent ceramic layers (n ≧ 2, and n is an even number) having different rare-earth ion doping concentrations, and the luminescent ceramic layer closer to the center has a higher rare-earth ion doping concentration. Except for this, the configuration of the light emitting apparatus is almost the same as that of the third embodiment, and therefore, a repetitive description will be omitted below.
It should be understood that in the present embodiment, as shown in fig. 7, the core layer in the multilayer structure is composed of an even number of luminescent ceramic layers (2 layers in the drawing) having different rare earth ion doping concentrations, and thus there is no core layer 20 at the center of the luminescent concentrator as shown in fig. 5, but the core layers 20 and 23 are located together at the position closest to the center of the luminescent ceramic layers. In this case, if two core layers (e.g., core layer 20 and core layer 23 in the figure) at the same distance from the center of the luminescent concentrator 2 are sintered from the luminescent ceramic material containing the same doping concentration of rare earth ions, the doping concentration of rare earth element ions in the luminescent ceramic layer in the sintered multilayer structure is still gradually decreased from the center to both sides in the stacking direction of the multilayer structure, as shown in fig. 8. If the two core layers, which are at the same distance from the center of the luminescent concentrator 2, are sintered from luminescent ceramic materials containing different doping concentrations of rare earth ions, the peak of the doping concentration of rare earth ions is no longer located in the center of the luminescent concentrator 2, but is present in the center of the one of the two core layers closest to the center of the luminescent concentrator 2, which is the higher doping concentration of rare earth ions. Fig. 9 shows the case where the luminescent concentrator 2 is provided with two core layers 20 and 23 and the rare earth ion doping concentration in the core layer 20 is larger than the rare earth ion doping concentration in the core layer 23. It is to be understood that in this case, although the peak position of the rare earth ion doping concentration within the luminescent concentrator 2 is shifted from the center of the luminescent concentrator 2, the rare earth ion doping concentration within the luminescent concentrator 2 as a whole is still gradually decreasing from the inside towards the outside in the thickness direction. Thus, the transition of the doping concentration of the rare earth ions within the luminescent concentrator 2 of the present embodiment is more gradual than in the luminescent device of the first embodiment, so that the thermal field distribution in the luminescent concentrator 2 is more uniform, further reducing thermal effects.
Fourth embodiment
Fig. 10 is a side view and a top view of a multilayer structure of a luminescent concentrator of a light emitting device according to a fourth embodiment of the invention. A light emitting apparatus according to a fourth embodiment of the present invention is different from the light emitting apparatus of the first embodiment in that: the core layer in the multilayer structure comprises two or more different luminescent ceramic layers. Except for this, the configuration of the light emitting apparatus is almost the same as that of the first embodiment, and therefore, a repetitive description will be omitted below.
The different luminescent ceramic layers in the core layer are formed of luminescent ceramic materials doped with different ions of rare earth elements. In the example of fig. 10, (Y) is used in order to obtain a white light output with a high color rendering index1-cCec)3Al5O12Ceramic (where c is 0.001-0.1, and the specific value is determined by theoretical calculation and experimental analysis according to the intensity of light incident from the light source, the size of the luminescent concentrator, and the requirements for color temperature and color coordinate of the product) is used to form the core layer 20, and (Y) is used1-dEud)3Al5O12(wherein d is 0.001-0.1, and the specific value is determined by theoretical calculation and experimental analysis according to the intensity of the light source incident light, the size of the luminescent concentrator, and the requirements on the color temperature and color coordinates of the product). D2, d5, d0 and d1 in the figure indicate the thickness of each layer. During sintering, Ce ions in the casting sheet constituting the core layer 20 and Eu ions in the casting sheet constituting the core layer 25 also diffuse from the originally present layer toward the outer clad layer, so that luminescence concentration in the present embodimentIn the device 2, the doping concentration of the rare earth ions is still decreased from the center to both sides as a whole.
In addition, in this example, since two kinds of YAG luminescent ceramic core layers containing different dopant ions are provided, light having a first wavelength distribution emitted from the light source 1 enters the luminescent concentrator through the light incident surface 211 and/or 213 of the luminescent concentrator 2, at least a part of incident light having the first wavelength distribution is converted into a laser acceptance light having a second wavelength distribution by the Ce ion-doped core layer 20, and is guided to the light exit surface 212 to exit under the effect of total reflection; at least a part of the incident light having the first wavelength distribution is converted into a excited light having a third wavelength distribution by the Eu-ion-doped core layer 25, and guided to the light exit surface 212 to exit under the total reflection action. Note that part of the excited light having the second wavelength distribution generated in the core layer 20 may enter the core layer 25 and be secondarily converted into excited light having the third wavelength distribution, and vice versa. By controlling parameters such as the thickness of each layer and the doping amount of each rare earth ion, the ratio of light having the first wavelength distribution, the second wavelength distribution, and the third wavelength distribution among the light emitted from the light emission surface 212 can be controlled, and thus light output of a desired color can be obtained. Therefore, the light emitting apparatus according to the present embodiment can achieve more desirable control of the color temperature and color coordinates of the output light in addition to the advantages of the foregoing embodiments.
The method of manufacturing the luminescent concentrator 2 according to this embodiment is similar to the method of manufacturing in the first and second embodiment, except for the materials of manufacture, the order and number of the layers of the stack, etc., which are slightly different and will not be described here.
Fifth embodiment
A light emitting apparatus according to a fifth embodiment of the present invention is a modification of the light emitting apparatus of the first embodiment. The light emitting apparatus of the present embodiment is different from the light emitting apparatus of the first embodiment: the cladding layers 21 and 22 are made of Al2O3Is made of ceramics. Compared with the cladding layer made of YAG ceramic in example 1, the cladding layer made of Al2O3The cladding layer made of ceramic has higher thermal conductivity, and thus can be more effectively reducedThermal effect of the luminescent concentrator in the small light emitting device.
A method of preparing a luminescent concentrator in a light emitting device according to the present embodiment will be briefly described below.
According to Al respectively2O3And (Y)1-xCex)3Al5O12(wherein x is 0.001-0.1, and the specific value is determined by theoretical calculation and experimental analysis according to the intensity of light source incident light, the size of a light-emitting collector, and the requirements on the color temperature and color coordinate of the product.) the high-purity commercial Al is weighed according to the stoichiometric proportion2O3Powder of Y2O3Powder and CeO2And (3) powder. Then, a ceramic body is prepared by adopting a tape casting process. Wherein, surfactants such as EDS are selected as a dispersing agent, alcohol is selected as a solvent, vinyl polymers (PVA, PVB or PVC) and the like are selected as a binder, and phthalate plasticizers are selected as plasticizers. Due to dense Al2O3The sintering temperature of the ceramic is higher than that of dense (Y)1-xCex)3Al5O12Sintering temperature of ceramics in order to obtain dense Al by sintering at the same temperature2O3&(Y1-xCex)3Al5O12&Al2O3The ceramic of the multilayer structure is required to be Al2O3Sintering aids such as MgO and/or TEOS are added into the original slurry of the ceramic. Ball-milling and mixing the raw material powder of the two ceramics respectively with a solvent and a dispersant uniformly, and then adding a binder and a plasticizer to perform secondary ball-milling and mixing to obtain slurry; putting the uniformly mixed slurry into a vacuum system, and removing air bubbles in the slurry; thereafter, the slurry was molded on a casting machine to obtain a casting film, followed by drying at normal temperature for 24 hours. After drying, Al is obtained respectively2O3Precursor casting film of (a) and (Y)1-xCex)3Al5O12Casting a film from the precursor of (1). Next, the precursor cast film is trimmed according to the design dimensions of the luminescent concentrator (length l and width w as shown in FIG. 2) to obtain a cast film sheet of the corresponding dimensions, taking into account the cast film sheet for the subsequent stepsThe size of the casting film is slightly larger than l x w due to the size shrinkage in the sintering process and the subsequent machining allowance. Specific values for the dimensions can be determined by theoretical simulation in combination with experimental analysis. Then, take n0Sheet (Y)1-xCex)3Al5O12The precursor casting film of (a) is laminated, and n is further laminated on both sides, respectively1And n2Flake Al2O3Casting the membrane from the precursor. Wherein n is0、n1And n2By taking into account the thickness (d) of the layers of the luminescent concentrator to be obtained0、d1、d2) The size shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the core layer and the cladding layer, the subsequent machining allowance and other factors are determined by combining theoretical simulation and experimental results. And then, placing the laminated casting film in an environment of 50-90 ℃ and applying a pressure of 20-80 MPa, so that the laminated casting film can be well combined together. And then, carrying out glue removing treatment for 12 hours at the temperature of 500-900 ℃, and then carrying out cold isostatic pressing at the pressure of 200-300 MPa to obtain the ceramic biscuit with the multilayer structure. And (3) sintering the ceramic biscuit for 5-30 hours at 1650-1850 ℃ in vacuum to obtain the multilayer ceramic with the multilayer laminated structure. During sintering, originally located at n0Sheet (Y)1-xCex)3Al5O12Al with Ce ions facing both sides in the cast film (core layer 20 after sintering)2O3The cast films (after sintering, the claddings 21 and 22) are diffused therein. In the finally obtained multilayer ceramic, the doping concentration of Ce ions is gradually reduced from the center to the surface. Finally, the multilayer ceramic obtained by sintering is subjected to polishing treatment and covered with a highly reflective film or a total reflection film at one end of the multilayer ceramic, and a light emitting concentrator 2 for a light emitting device according to a fifth embodiment of the present invention is obtained.
It is to be understood that in the light emitting devices of the second to fourth embodiments, the cladding of the luminescent concentrator 2 may also be made of Al as described above2O3Ceramic.
Although the light emitting apparatus according to the present invention has been described above with reference to the accompanying drawings, the present invention is not limited thereto, and those skilled in the art will appreciate that various changes, combinations, sub-combinations, and modifications may be made without departing from the spirit or scope of the invention as defined in the appended claims.

Claims (15)

1. A luminescent concentrator having a light exit surface, a light entrance surface, and an opposite side surface opposite the light exit surface,
the luminescent concentrator has a multilayer structure stacked along a height direction of the luminescent concentrator, the multilayer structure including at least one core layer at a center and clad layers stacked on both sides of the at least one core layer, the clad layers transmitting light having a first wavelength distribution, the at least one core layer converting the light having the first wavelength distribution into light having a second wavelength distribution, and
the light exit surface is one end surface of the luminescent concentrator extending in a height direction and a width direction, and the light entrance surface is an outer surface of an outermost cladding layer of the luminescent concentrator other than the light exit surface and the opposite side surface; the opposite side surface is provided with a light shielding element for preventing light from leaking, and the area of the light incidence surface is larger than that of the light exit surface;
in the luminescent concentrator, a doping concentration of rare earth element ions gradually decreases from a center to both sides of the luminescent concentrator in a stacking direction of the multilayer structure; or the doping concentration of rare earth element ions gradually decreases from the center of one core layer closest to the center of the light emitting concentrator to both sides in the stacking direction of the multilayer structure.
2. The luminescent concentrator of claim 1, wherein the at least one core layer comprises two or more luminescent ceramic layers having different doping concentrations of rare earth ions.
3. The luminescent concentrator of claim 1, wherein the at least one core layer comprises two or more different luminescent ceramic layers.
4. The luminescent concentrator of claim 3, wherein each luminescent ceramic layer is formed of a luminescent ceramic material doped with ions of a different rare earth element.
5. The luminescent concentrator of claim 1, wherein at least one surface of the luminescent concentrator other than the light entrance surface, the light exit surface and the opposite side surface is also provided with the light shielding element.
6. A luminescent concentrator as claimed in any of claims 1 to 5, wherein the shading element is a specularly reflective film.
7. A luminescent concentrator according to any of claims 1 to 5, characterized in that the luminescent concentrator is further provided with a reflective element arranged on at least one surface other than the light entrance surface and the light exit surface.
8. The luminescent concentrator of claim 7, wherein the reflective element is a specular reflective layer with a reflectivity of greater than 95%; alternatively, the reflective element is a layer of diffuse reflective material having a reflectivity of greater than 90%.
9. A luminescent concentrator according to any of claims 1 to 5, wherein an optical film is further provided at the light entrance surface of the luminescent concentrator, which is only transmissive for light having the first wavelength distribution.
10. The luminescent concentrator of claim 9, wherein the optical film is a dichroic film that transmits light having the first wavelength distribution or an angle selective filter that transmits only light having the first wavelength distribution incident at a predetermined range of angles of incidence.
11. A luminescent concentrator as claimed in any of claims 1 to 5, characterized in that the luminescent concentrator has a wedge shape such that the area of the light exit surface is smaller than the area of the surface opposite thereto.
12. A luminescent concentrator as claimed in any one of claims 1 to 5, wherein the cladding layer is Al2O3A ceramic layer.
13. A luminescent concentrator as claimed in any of claims 1 to 5, wherein a light coupling element is provided at the light exit surface, which is optically connected to the luminescent concentrator, the light coupling element having a refractive index equal to or lower than the lowest refractive index of the core layer and the cladding layer of the luminescent concentrator.
14. A light emitting apparatus, characterized in that the light emitting apparatus comprises:
a luminescent concentrator as claimed in any one of claims 1 to 13;
a light source arranged towards the light entrance surface of the luminescent concentrator, the light source emitting light having the first wavelength distribution.
15. A projection light source, characterized in that it comprises a luminescent concentrator as claimed in any one of claims 1 to 13.
CN201710500490.5A 2017-06-27 2017-06-27 Luminescent concentrator, luminescent device and projection light source Active CN109143745B (en)

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102106003A (en) * 2008-07-22 2011-06-22 皇家飞利浦电子股份有限公司 An optical element for a light emitting device and a method of manufacturing thereof
WO2012066881A1 (en) * 2010-11-18 2012-05-24 日本電気硝子株式会社 Wavelength conversion element and light source provided with same
CN102563405A (en) * 2010-11-08 2012-07-11 Lg伊诺特有限公司 A lighting device comprising photoluminescent plate
CN102782089A (en) * 2010-02-04 2012-11-14 日东电工株式会社 Light emissive ceramic laminate and method of making same
DE102012107797A1 (en) * 2012-08-23 2014-02-27 Osram Opto Semiconductors Gmbh A method of manufacturing a semiconductor light emitting device and light emitting semiconductor device
CN104276818A (en) * 2014-09-10 2015-01-14 江苏诚赢照明电器有限公司 Multi-layer composite YAG (yttrium aluminum garnet) transparent ceramic and preparation method thereof
CN204829755U (en) * 2015-06-02 2015-12-02 深圳市光峰光电技术有限公司 Wavelength conversion equipment , relevant illuminator and projecting system
CN105301878A (en) * 2014-07-17 2016-02-03 深圳市绎立锐光科技开发有限公司 Wavelength conversion device, and preparation method, related light emitting device and projections system thereof
CN105556202A (en) * 2013-09-10 2016-05-04 飞利浦照明控股有限公司 A light emitting device
CN106030835A (en) * 2014-05-21 2016-10-12 日本电气硝子株式会社 Wavelength conversion member and light emitting device using same
CN106662293A (en) * 2014-10-03 2017-05-10 飞利浦照明控股有限公司 A light concentrator for use in a lighting device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2512075Y (en) * 2001-11-02 2002-09-18 李克祥 Fluorescent sign
WO2005024960A1 (en) * 2003-09-08 2005-03-17 Group Iv Semiconductor Inc. Solid state white light emitter and display using same
CN101170847A (en) * 2006-10-25 2008-04-30 中国科学院半导体研究所 Silicon base lanthanon adulterated EL part
WO2009148176A1 (en) * 2008-06-02 2009-12-10 Panasonic Corporation Semiconductor light emitting apparatus and light source apparatus using the same
CN102187485B (en) * 2008-10-15 2013-07-03 株式会社小糸制作所 Light-emitting module, manufacturing method for light-emitting module, and light fixture unit
JP5548396B2 (en) * 2009-06-12 2014-07-16 三菱マテリアル株式会社 Wiring layer structure for thin film transistor and manufacturing method thereof
WO2011027511A1 (en) * 2009-09-02 2011-03-10 株式会社 東芝 White led, backlight using same, and liquid crystal display device
WO2012006128A2 (en) * 2010-06-28 2012-01-12 Axlen Technologies, Inc. High brightness illumination devices using wavelength conversion materials
KR20120130610A (en) * 2011-05-23 2012-12-03 엘지전자 주식회사 Light source apparatus and method for manufacturing the same
WO2013145667A1 (en) * 2012-03-29 2013-10-03 ソニー株式会社 Organic electroluminescence element
CN102748730A (en) * 2012-06-18 2012-10-24 上海亚浦耳照明电器有限公司 Explosion-proof illuminating bulb
CN203177038U (en) * 2013-04-22 2013-09-04 广东纳明新材料科技有限公司 Luminescent board
US9890089B2 (en) * 2014-03-11 2018-02-13 General Electric Company Compositions and methods for thermal spraying a hermetic rare earth environmental barrier coating
CN104735833A (en) * 2015-01-29 2015-06-24 浙江大学 Electroluminescent device based on rare earth-doped TiO2 film and manufacturing method thereof

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102106003A (en) * 2008-07-22 2011-06-22 皇家飞利浦电子股份有限公司 An optical element for a light emitting device and a method of manufacturing thereof
CN102782089A (en) * 2010-02-04 2012-11-14 日东电工株式会社 Light emissive ceramic laminate and method of making same
CN102563405A (en) * 2010-11-08 2012-07-11 Lg伊诺特有限公司 A lighting device comprising photoluminescent plate
WO2012066881A1 (en) * 2010-11-18 2012-05-24 日本電気硝子株式会社 Wavelength conversion element and light source provided with same
DE102012107797A1 (en) * 2012-08-23 2014-02-27 Osram Opto Semiconductors Gmbh A method of manufacturing a semiconductor light emitting device and light emitting semiconductor device
CN105556202A (en) * 2013-09-10 2016-05-04 飞利浦照明控股有限公司 A light emitting device
CN106030835A (en) * 2014-05-21 2016-10-12 日本电气硝子株式会社 Wavelength conversion member and light emitting device using same
CN105301878A (en) * 2014-07-17 2016-02-03 深圳市绎立锐光科技开发有限公司 Wavelength conversion device, and preparation method, related light emitting device and projections system thereof
CN104276818A (en) * 2014-09-10 2015-01-14 江苏诚赢照明电器有限公司 Multi-layer composite YAG (yttrium aluminum garnet) transparent ceramic and preparation method thereof
CN106662293A (en) * 2014-10-03 2017-05-10 飞利浦照明控股有限公司 A light concentrator for use in a lighting device
CN204829755U (en) * 2015-06-02 2015-12-02 深圳市光峰光电技术有限公司 Wavelength conversion equipment , relevant illuminator and projecting system

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