CN109136846A - A kind of independent metal method for manufacturing thin film and metallic film - Google Patents
A kind of independent metal method for manufacturing thin film and metallic film Download PDFInfo
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- CN109136846A CN109136846A CN201810753153.1A CN201810753153A CN109136846A CN 109136846 A CN109136846 A CN 109136846A CN 201810753153 A CN201810753153 A CN 201810753153A CN 109136846 A CN109136846 A CN 109136846A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to a kind of independent metal method for manufacturing thin film and metallic film, this method comprises: S1, spin coating are transfer coated: selection surface meets the substrate of optical grade flatness, to substrate carry out cleaning, drying and on the surface of a substrate spin coating it is transfer coated；S2, solidification: evaporating and cooling spin coating it is transfer coated after substrate, it is transfer coated to solidify；S3, deposition: selecting metal material, and the metallic film of preset thickness is generated in cured transfer coated surface deposition；S4, removing: be placed in the substrate with metallic film can dissolve in transfer coated organic solvent at normal temperature, to separate metallic film；S5, transfer: keeping metallic film is that unfolded state and shifting is dried under metallic film to oxygen free condition, to obtain final independent metal film.The independent metal film preparation met the requirements can be obtained by implementing the present invention, and method is simple and easy, and at low cost.
Description
Technical field
The present invention relates to technical field of metal membrane preparation, more specifically to a kind of independent metal film preparation side
Method and metallic film.
Background technique
The free standing structure film with a thickness of dozens to a few hundred nanometers can be usually used in scientific research and practical semiconductor technique,
This film should not be removed due to too thin, be difficult to adopt conventional method preparation.
Summary of the invention
The technical problem to be solved in the present invention is that providing a kind of independent gold for the above-mentioned technological deficiency of the prior art
Belong to method for manufacturing thin film and metallic film.
The technical solution adopted by the present invention to solve the technical problems is: a kind of independent metal method for manufacturing thin film is constructed,
The following steps are included:
S1, spin coating are transfer coated: selection surface meets the substrate of optical grade flatness, carries out cleaning, drying to the substrate
And spin coating is transfer coated on the substrate surface；
S2, solidification: the substrate after transfer coated described in evaporation and cooling spin coating, it is described transfer coated to solidify；
S3, deposition: selecting metal material, and the metal foil of preset thickness is generated in cured transfer coated surface deposition
Film；The deposition includes:
It is filled with argon gas under vacuum conditions, and the metal is generated in the transfer coated surface deposition by shielding power supply
Film；Or
Under vacuum conditions by electron beam power supply to the metal material heating and gasifying, on the transfer coated surface
Deposition generates the metallic film；
S4, removing: the substrate with the metallic film is placed at normal temperature can dissolve it is described transfer coated organic
In solvent, to separate the metallic film；
S5, transfer: keeping the metallic film is that unfolded state and shifting is dried under the metallic film to oxygen free condition,
To obtain final independent metal film.
Preferably, in the step S1, described during spin coating is transfer coated on the substrate surface, the transfer
Coating layer thickness is 0.5-2 times of the preset thickness of the metallic film.
Preferably, in the step S3, it deposits described on cured transfer coated surface to generate preset thickness
During metallic film, the underlayer temperature is no more than 80 DEG C.
Preferably, in the step S3, the argon gas that is filled under vacuum conditions includes: to be filled with argon gas to air pressure to meet
0.4-4Pa。
Preferably, in the step S3, the preset thickness of the metallic film is 50-1000nm.
Preferably, in the step S1, the surface smoothness of the substrate is ± 10nm.
Preferably, in the step S3, the metal material is one of Au, Ag, Cu, Cr, Al, Ni, Ti or more
Kind.
Preferably, in the step S5, the transfer process includes using reticular structure or hollow ring frame tool
The metallic film is lifted to keep the metallic film as unfolded state.
Preferably, after the step S2, following steps are also executed:
S2-1, predetermined pattern: predetermined pattern is arranged in transfer coated surface after hardening.
The present invention also constructs a kind of metallic film, is obtained by any of the above independent metal method for manufacturing thin film preparation
It takes.
Implement independent metal method for manufacturing thin film and metallic film of the invention, having the advantages that can obtain
The independent metal film preparation met the requirements, method is simple and easy, and at low cost.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples, in attached drawing:
Fig. 1 is a kind of flow diagram of independent metal method for manufacturing thin film first embodiment of the present invention；
Fig. 2 is a kind of process schematic of independent metal method for manufacturing thin film first embodiment of the present invention；
Fig. 3 is a kind of flow diagram of independent metal method for manufacturing thin film second embodiment of the present invention；
Fig. 4 is a kind of process schematic of independent metal method for manufacturing thin film second embodiment of the present invention.
Specific embodiment
For a clearer understanding of the technical characteristics, objects and effects of the present invention, now control attached drawing is described in detail
A specific embodiment of the invention.
As depicted in figs. 1 and 2, in a kind of independent metal method for manufacturing thin film first embodiment of the invention, including with
Lower step: S1, spin coating are transfer coated: selection surface meets the substrate of optical grade flatness, to substrate carry out cleaning, drying and
Spin coating is transfer coated on substrate surface；Specifically, the substrate cleaning, drying for taking surface optical grade flatness to meet the requirements, guarantees table
Face is clean, dry；Here substrate can choose the similar material such as silicon or glass.Clean substrate surface is being handled using conventional
For the spin coating of photoresist spin coater with a thickness of the transfer coated of 100~1000nm, here transfer coated can use PMMA or photoetching
Glue etc..In embodiment herein, using PMMA, property is relatively stable after PMMA solidification, and relative to silicone oil, molten metal
Or liquid crystal material is compared, and PMMA is easily obtained, and it is at low cost, and will not volatilize during deposit metal films, it will not be to vacuum
Environmental effects or pollution.In spin coating process, PMMA thickness can be controlled by spin coater revolving speed and PMMA viscosity,
PMMA viscosity can be controlled by PMMA with solvent ratios, and solvent here can be using phenol or methyl phenyl ethers anisole etc..
S2, solidification: evaporating and cooling spin coating it is transfer coated after substrate, it is transfer coated to solidify；Specifically, will be by spin coating
The substrate of good PMMA is placed in evaporation on drying oven and then cools and solidifies the PMMA to remove solvent, apply the transfer on substrate
Layer is hard structure.
S3, deposition: selecting metal material, and the metal foil of preset thickness is generated in cured transfer coated surface deposition
Film；Deposition includes: to be filled with argon gas under vacuum conditions, and deposit by shielding power supply on transfer coated surface and generate metal foil
Film；Or under vacuum conditions by electron beam power supply to metal material heating and gasifying, gold is generated to deposit on transfer coated surface
Belong to film；Specifically, the substrate of the good PMMA of spin coating is placed in vacuum cavity, the atmospheric pressure that vacuum cavity here meets
It is 10-4Pa or less.It is deposited on vacuum condition on transfer coated surface, generates the metallic film of preset thickness, in addition,
It can be used during deposit metal films with crystal oscillator chip technology and implement to monitor film thickness.Here the tool of the deposition of metallic film
Gymnastics is made can be with are as follows: metal material target (Au, Ag, Pt, Cr, Ti, Al etc.) needed for selecting simultaneously is installed to target stand, and spin coating is put into
Vacuum cavity atmospheric pressure is maintained 10 by the substrate of good PMMA-4Pa is hereinafter, and guarantee free from admixture gas in film deposition process.
It is filled with high-purity argon gas, air pressure maintains between 0.4-4Pa in the cavity after can making to be filled with argon gas herein, and maintains air pressure steady
It is fixed.Shielding power supply is opened, sputtering current maintains 0.1-0.5A, sputtering voltage 220-550V, excites argon plasma.Deng from
Argon gas+bombardment metal targets surface in daughter, sputters metallic atom and deposits to and form metallic film on substrate.Metallic film is heavy
Long-pending process can also use following concrete operations: selecting required metal material powder to be placed in evaporator crucible, be put into rotation
Vacuum cavity base vacuum is evacuated to 10 by the substrate for coating PMMA-4-10-5Pa is hereinafter, guarantee during deposit metal films
Without other impurities gas under vacuum condition.Electron beam power supply is opened, maintains its output power in 800-3000W, excites electron beam
Metal material in crucible is heated and gasified, metal material is deposited on substrate.In addition, in deposit metal films mistake
Ambient pressure is controlled in journey, is air pressure position compared with low state, and when air pressure is low, the deposition velocity of metallic film can be slow, golden in this way
The crystal grain for belonging to film can be smaller, and metallic film internal stress can be small, is conducive to the removing of metallic film in this way and non-friable, works as metal
The particle of film is too big, and metallic film internal stress can be bigger, and in this way in the stripping process of metallic film, metallic film is opposite
It is easily broken, so guaranteeing its low pressure vacuum environment as far as possible during deposit metal films.
S4, removing: be placed in the substrate with metallic film can dissolve in transfer coated organic solvent at normal temperature, with
Separate metallic film；Specifically, the substrate for the metallic film that deposition forms preset thickness is soaked in organic solvent, here
Organic solvent is that can to dissolve this transfer coated and do not destroy the solvent of substrate and metallic film.It is dissolved in this way in organic solvent
It is passed through in transfer coated process, substrate and metallic film be not by solvent effect.Such as when it is transfer coated be PMMA when, organic solvent
Acetone can be used.Furthermore during Solvents Solvent is transfer coated, it is ensured that temperature is room temperature, such as temperature control 25
± 5 DEG C, until metallic film is kept completely separate with substrate.Furthermore it will be clear that PMMA relative molecular mass is smaller, at it
Surface formed metallic film it is more easily peelable, such as removing 300nmAg, use PMMA relative molecular mass for 50K, with a thickness of
300nm, maintains 30min in 25 DEG C of acetone, and metallic film and substrate can easily natural separations.
S5, transfer: keeping metallic film is that unfolded state and shifting is dried under metallic film to oxygen free condition, to obtain most
Whole independent metal film.Specifically, metallic film can be suspended in solution, and metal after metallic film is separated with substrate
Film certainly exists the patent process to metallic film in, to guarantee metallic film one in metallic film transfer process here
Directly it is unfolded state, while the metallic film of taking-up is placed in oxygen free condition drying, obtains final independent metal film in this way,
It is used for the scene of various needs.Here oxygen free condition can for by metallic film from solution take out after, be placed in nitrogen box
Middle drying.Certainly oxygen-free environment here is not limited to be described above.
Further, in step sl, it is transfer coated with a thickness of metal during spin coating is transfer coated on the surface of a substrate
0.5-2 times of the preset thickness of film.Specifically, in order to guarantee that the thickness of the metallic film finally obtained is met the requirements, usually
Meet 0.5-2 times of the target thickness of metallic film in transfer coated thickness, in this manner it is ensured that the deposition of metallic film
Cheng Zhong guarantees complete, that is, the metal foil deposited of metallic film in the quality of metallic film and below metallic film stripping process
Film will not be easy to break.Furthermore also make the stripping process of metallic film simple, reduce the waste of time and materials.
Further, in step s3, in the metal foil for generating preset thickness in cured transfer coated surface deposition
In membrane process, underlayer temperature is no more than 80 DEG C.Specifically, being carried out during deposit metal films to substrate temperature simultaneously real
Monitoring is applied, guarantees that substrate temperature is no more than 80 DEG C, when occurring more than 80 DEG C, stops electron beam power supply or shielding power supply,
To stop the deposition of metallic film.Here metallic film stress is controlled in the deposition process of metallic film, work as metallic film
In deposition process, substrate temperature changes greatly, and the metallic film stress for depositing formation will increase, then metallic film is in its removing
It is easy to break in the process.So control underlayer temperature is also a crucial element.
Further, being filled with argon gas under vacuum conditions includes: to be filled with argon gas to air pressure to meet 0.4-4Pa.Specifically, such as
Previously mentioned, during deposit metal films, ambient pressure has an impact to the grain structure and stress that generate metallic film, this
When sample is filled with argon gas in vacuum environment, it is ensured that being filled with argon gas can satisfy the needs of deposit metal films process, and
While guaranteeing that the grain structure of the metallic film generated and stress meet the needs of metallic film stripping process, it is being filled with argon in this way
During gas, the air pressure environment for being filled with argon gas is made to meet 0.4-4Pa.Furthermore, it is possible to recognize, in deposit metal films process
Middle vacuum degree maintains gold (Au) film under 0.4Pa more easily peelable, and the metallic film removed is easier to maintain integrality.
Further, in step s3, the preset thickness of metallic film is 50-1000nm.Specifically, heavy in metallic film
Crystal oscillator chip technology can be used during product to implement to monitor film thickness, so that the thickness of final metallic film meets 50-
1000nm, to guarantee the more easily peelable of metallic film and to guarantee its integrality in stripping process.
Further, in step sl, the surface smoothness of substrate is ± 10nm/cm2, temperature do not send out in 180 DEG C of properties
Changing.Specifically, the flatness of control substrate surface, to guarantee that the transfer coated flatness of its surface spin coating can satisfy
It is required that being finally that the flatness of the metallic film got can satisfy requirement
Further, in step s3, one of metal material Au, Ag, Cu, Cr, Al, Ni, Ti or a variety of.Specifically
, metal material can be in golden (Au), silver-colored (Ag), platinum (Pt), copper (Cu), chromium (Cr), titanium (Ti), iron (Fe), nickel (Ni)
Any one, or it is a variety of, for example, various metals material composition alloy.
Further, in step s 5, transfer process includes, using reticular structure or hollow ring frame tool to metal
Film is lifted to keep metallic film as unfolded state.Specifically, metallic film can be suspended in solution after separating with substrate
In, if directly taking out metallic film at this time, metallic film is easy to tangle together.Therefore, hollow annular can be used here
The tool of frame or reticular structure holds metallic film, work of such metallic film in hollow ring frame or reticular structure from below
The surface of tool remains unfolded state, and hollow and reticular structure can be such that solution filters out, thus very aspect metallic film
Transfer.
As shown in Figure 3 and Figure 4, after the step S2, following steps: S2-1, predetermined pattern: after hardening are also executed
Predetermined pattern is arranged in transfer coated surface.Specifically, can use the corresponding mold transfer coated upper surface good in spin coating
Coining, so that final metallic film forms the figure of final needs.It is to be understood that pattern on transfer coated with
The pattern of final metallic film is opposite pattern.It can according to need the independent metal film material for processing predetermined surface shape
Material, and be not limited to make smooth independent metal film.In addition, herein, by passing through electron beam electricity under vacuum conditions
Source can preferably realize step coverage to metal material heating and gasifying, to deposit generation metallic film on transfer coated surface
It is covered with the bottom hole of the micropore of big deep hole diameter.
It is at low cost by independent metal membrane-film preparation process described above in addition to easy to operate, and in metallic film
Temperature is maintained at room temperature level in deposition and stripping process, and the thermal stress of metallic film is small, and it is preferably tough to be able to maintain metallic film
Property, to remove and be not easy in fragmentation.And thickness can be effectively peeled off out in the full wafer 3D structure of dozens to a few hundred nanometers
Metallic film material.And the biggish independent metal film of area, the face of independent metal film can be formed by the above process
Product is maximum up to 10cm*10cm.
In addition, metallic film of the invention, can be prepared using described above point of method.Pass through independent metal above
Method for manufacturing thin film can prepare the independent metal film finally needed, also meet more usage scenarios.Pass through the above method
The metallic film thermal stress of acquisition is small, is able to maintain the preferable toughness of metallic film, is not easy fragmentation in use.
It should be understood that above embodiments only express the preferred embodiment of the present invention, description is more specific and detailed
Carefully, but it cannot be understood as limitations on the scope of the patent of the present invention；It should be pointed out that for the common skill of this field
For art personnel, without departing from the inventive concept of the premise, above-mentioned technical characterstic can be freely combined, can also be done
Several modifications and improvements out, these are all within the scope of protection of the present invention；Therefore, all to be done with scope of the invention as claimed
Equivalents and modification, should belong to the covering scope of the claims in the present invention.
Claims (10)
1. a kind of independent metal method for manufacturing thin film, which comprises the following steps:
S1, spin coating are transfer coated: selection surface meets the substrate of optical grade flatness, to the substrate carry out cleaning, drying and
Spin coating is transfer coated on the substrate surface；
S2, solidification: the substrate after transfer coated described in evaporation and cooling spin coating, it is described transfer coated to solidify；
S3, deposition: selecting metal material, and the metallic film of preset thickness is generated in cured transfer coated surface deposition；Institute
Stating deposition includes:
It is filled with argon gas under vacuum conditions, and the metal foil is generated in the transfer coated surface deposition by shielding power supply
Film；Or
Under vacuum conditions by electron beam power supply to the metal material heating and gasifying, to be deposited on the transfer coated surface
Generate the metallic film；
S4, removing: be placed in the substrate with the metallic film can dissolve the transfer coated organic solvent at normal temperature
In, to separate the metallic film；
S5, transfer: keeping the metallic film is that unfolded state and shifting is dried under the metallic film to oxygen free condition, with
To final independent metal film.
2. independent metal method for manufacturing thin film according to claim 1, which is characterized in that in the step S1, described
During spin coating is transfer coated on the substrate surface, the transfer coated preset thickness with a thickness of the metallic film
0.5-2 times.
3. independent metal method for manufacturing thin film according to claim 1, which is characterized in that in the step S3, in institute
During stating the metallic film in cured transfer coated surface deposition to generate preset thickness, the underlayer temperature is no more than 80
℃。
4. independent metal method for manufacturing thin film according to claim 2, which is characterized in that in the step S3, described
Being filled with argon gas under vacuum conditions includes: to be filled with argon gas to air pressure to meet 0.4-4Pa.
5. independent metal method for manufacturing thin film according to claim 1, which is characterized in that in the step S3, described
The preset thickness of metallic film is 50-1000nm.
6. independent metal method for manufacturing thin film according to claim 1, which is characterized in that in the step S1, described
The surface smoothness of substrate is ± 10nm/cm2。
7. independent metal method for manufacturing thin film according to claim 1, which is characterized in that in the step S3, described
Metal material is one of Au, Ag, Cu, Cr, Al, Ni, Ti or a variety of.
8. independent metal method for manufacturing thin film according to claim 1, which is characterized in that described in the step S5
Transfer process includes being lifted to the metallic film using reticular structure or hollow ring frame tool to keep the gold
Category film is unfolded state.
9. independent metal method for manufacturing thin film according to claim 1, which is characterized in that after the step S2, also hold
Row following steps:
S2-1, predetermined pattern: predetermined pattern is arranged in transfer coated surface after hardening.
10. a kind of metallic film, which is characterized in that pass through independent metal film preparation described in any one of claim 1-9
Method preparation obtains.
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| CN201810753153.1A CN109136846A (en) | 2018-07-10 | 2018-07-10 | A kind of independent metal method for manufacturing thin film and metallic film |
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| CN201810753153.1A CN109136846A (en) | 2018-07-10 | 2018-07-10 | A kind of independent metal method for manufacturing thin film and metallic film |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63240507A (en) * | 1987-03-27 | 1988-10-06 | Nippon Mining Co Ltd | Production of device |
| TW200940728A (en) * | 2008-03-18 | 2009-10-01 | Hsin Chuan Proficient Printing Co Ltd | Process for developing sheet with color patterns and product thereof |
| CN103715070A (en) * | 2013-12-30 | 2014-04-09 | 国家电网公司 | Method for adhesive magnetron sputtering thick film |
| CN104195518A (en) * | 2014-08-28 | 2014-12-10 | 华南师范大学 | Black light-absorbing film and preparation method thereof |
| CN106929811A (en) * | 2017-03-31 | 2017-07-07 | 深圳智达机械技术有限公司 | A kind of metal protection system based on micro-nano structure |
-
2018
- 2018-07-10 CN CN201810753153.1A patent/CN109136846A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63240507A (en) * | 1987-03-27 | 1988-10-06 | Nippon Mining Co Ltd | Production of device |
| TW200940728A (en) * | 2008-03-18 | 2009-10-01 | Hsin Chuan Proficient Printing Co Ltd | Process for developing sheet with color patterns and product thereof |
| CN103715070A (en) * | 2013-12-30 | 2014-04-09 | 国家电网公司 | Method for adhesive magnetron sputtering thick film |
| CN104195518A (en) * | 2014-08-28 | 2014-12-10 | 华南师范大学 | Black light-absorbing film and preparation method thereof |
| CN106929811A (en) * | 2017-03-31 | 2017-07-07 | 深圳智达机械技术有限公司 | A kind of metal protection system based on micro-nano structure |
Non-Patent Citations (2)
| Title |
|---|
| 刘彬: "银薄膜结构的高灵敏度Fabry-Perot光纤声压传感器", 《哈尔滨工业大学学报》 * |
| 李垚: "《新型功能材料制备原理与工艺》", 31 August 2017, 哈尔滨工业大学出版社 * |
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Application publication date: 20190104 |