CN109119430A - display panel and preparation method - Google Patents
display panel and preparation method Download PDFInfo
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- CN109119430A CN109119430A CN201811001848.0A CN201811001848A CN109119430A CN 109119430 A CN109119430 A CN 109119430A CN 201811001848 A CN201811001848 A CN 201811001848A CN 109119430 A CN109119430 A CN 109119430A
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- line layer
- pad
- opaque line
- electrically connected
- display panel
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 3
- 230000035515 penetration Effects 0.000 abstract description 8
- 238000003491 array Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
The embodiment of the invention discloses a kind of display panel and preparation method thereof, which includes: transparent substrate；The patterned opaque line layer being formed on the transparent substrate；The multiple display units being formed on the patterned opaque line layer, the display unit are arranged in array, and are electrically connected with the patterned opaque line layer.Technical solution provided in an embodiment of the present invention, by choosing transparent substrate, and the display panel of the display unit of patterned opaque line layer and the arrangement of multiple arrays is set on the transparent substrate, display unit is electrically connected with patterned opaque line layer, improves the Penetration ration of display panel.
Description
Technical field
The present embodiments relate to field of display technology more particularly to a kind of display panel and preparation methods.
Background technique
With the continuous development of display technology with the continuous expansion of urban architecture glass curtain wall area, it is badly in need of a kind of high pass
The display panel of saturating rate has higher Penetration ration when it does not show picture, can increase the utilization rate to glass curtain wall.
A kind of display screen mode of new situations has appeared in the visual field of people, it is exactly transparency LED display panel.It is transparent
LED display, can be with transparence display with its high-permeability, and the performance for not influencing indoor lighting obtains the favor in market.
Existing LED display panel is made of the shape of shutter multiple substrates for carrying LED light, and existing defect is such as
Under: because the substrate of carrying LED light and the line layer itself that is electrically connected with LED light be it is lighttight, Penetration ration is still less full
The demand of sufficient people.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of display panel and preparation method, to solve in the prior art
The not high technical problem of transparent display panel Penetration ration.
The embodiment of the invention provides a kind of display panels, comprising:
Transparent substrate；
The patterned opaque line layer being formed on the transparent substrate；
The multiple display units being formed on the patterned opaque line layer, the display unit are arranged in array,
And it is electrically connected with the patterned opaque line layer.
Optionally, the display unit includes micro-led chip, and the micro-led chip includes
First electrode and second electrode, the patterned opaque line layer include multiple first conducting wires and multiple with described first
Corresponding second conducting wire of conducting wire, the first end of first conducting wire is electrically connected with the first electrode, described
Second conducting wire is electrically connected with the second electrode.
It optionally, further include being formed on the patterned opaque line layer, and be located at the patterned transparent thread
Multiple pad structures between road floor and the micro-led chip, the pad structure and the miniature light-emitting diodes
Tube chip is arranged in a one-to-one correspondence, and the pad structure includes the first pad and the second pad, first pad and described first
Electrode electrical connection, second pad is electrically connected with the second electrode, the first end of first conducting wire and described the
The electrical connection of one pad, second conducting wire are electrically connected with second pad.
Optionally, further include transparent enclosure glue, be formed on the display unit.
Optionally, the spacing of the two neighboring display unit is greater than or equal to 3 millimeters, and is less than or equal to 5 millimeters.
It optionally, further include flexible circuit board and control chip；
The flexible circuit board is attached on the transparent substrate, is shown by the patterned opaque line layer with described
Show that unit is electrically connected, the control chip is electrically connected by the flexible circuit board with the patterned opaque line layer.
Second aspect, the embodiment of the invention provides a kind of preparation methods of display panel, based on described in first aspect
Display panel, comprising:
Transparent substrate is provided；
Patterned opaque line layer is formed on the transparent substrate；
Multiple display units are formed on the patterned opaque line layer, the display unit is arranged in array, and
It is electrically connected with the patterned opaque line layer.
Optionally, the display unit includes micro-led chip, and the micro-led chip includes
First electrode and second electrode, the patterned opaque line layer include multiple first conducting wires and multiple with described first
Corresponding second conducting wire of conducting wire, the first end of first conducting wire is electrically connected with the first electrode, described
Second conducting wire is electrically connected with the second electrode.
Optionally, described to form patterned opaque line layer on the transparent substrate and specifically comprise the following steps:
Transparency conducting layer is formed on the transparent substrate；
Multiple pad structures are formed on the transparency conducting layer, the pad structure includes the first pad and the second pad；
The transparency conducting layer is performed etching, forms patterned opaque line layer, the of first conducting wire
One end is electrically connected with first pad, and second conducting wire is electrically connected with second pad.
It optionally, further include forming transparent encapsulated layer on the display unit.
The embodiment of the invention provides a kind of display panel and preparation method, transparent substrate is chosen, and in transparent base
The display panel of the display unit of patterned opaque line layer and the arrangement of multiple arrays, display unit and pattern are set on plate
The opaque line layer of change is electrically connected, to solve the not high technical problem of transparent display panel Penetration ration in the prior art.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for display panel that the embodiment of the present invention one provides；
Fig. 2 is the structural schematic diagram for another display panel that the embodiment of the present invention one provides；
Fig. 3 is the sectional view in the direction A-A ' in Fig. 1；
Fig. 4 is a kind of flow diagram of the preparation method of display panel provided by Embodiment 2 of the present invention；
Fig. 5 is the flow diagram of the preparation method of another display panel provided by Embodiment 2 of the present invention；
Fig. 6-Figure 11 is a kind of corresponding structure of each step of the preparation method of display panel provided by Embodiment 2 of the present invention
Schematic diagram.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 1 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention, referring to Fig. 1, the display panel packet
It includes: transparent substrate 10；Form patterned opaque line layer 20 on the transparent substrate 10；It is formed in patterned opaque line
Multiple display units 30 on layer, display unit 30 are arranged in array, and are electrically connected with patterned opaque line layer 20.
In the present embodiment, transparent substrate 10 can select rigid substrates or flexible base board, and rigid substrates include glass
Substrate, flexible base board may include polyimides (Polyimide, PI).Patterned opaque line layer 20 in Fig. 1 not
Patterned shape is shown, specific those skilled in the art can be with the pattern of designed, designed opaque line layer.Display unit 30
It is arranged in array, it is illustrative in Fig. 1, it illustrate only the display unit in the column arrangement of three rows two.Specific line number and columns
There is no make specific limit for the embodiment of the present invention.
Existing LED display panel is made of the shape of shutter multiple substrates for carrying LED light in the prior art,
Existing defect is as follows: because the substrate of carrying LED light and the line layer itself that is electrically connected with LED light be it is lighttight, it is penetrating
Rate still less meets the needs of people.The embodiment of the invention provides a kind of display panels, choose transparent substrate 10, Yi Ji
The display panel of the display unit 30 of patterned opaque line layer 20 and the arrangement of multiple arrays is set on transparent substrate 10, is shown
Show that unit is electrically connected with patterned opaque line layer, improves the Penetration ration of display panel.
Optionally, based on the above technical solution, display unit includes micro-led chip, miniature to shine
Diode chip for backlight unit includes first electrode and second electrode, and patterned opaque line layer includes multiple first conducting wires and multiple
The second conducting wire corresponding with the first conducting wire, the first end of the first conducting wire are electrically connected with first electrode, and second leads
Electric line is electrically connected with second electrode.
Referring to figs. 2 and 3, display unit 30 includes micro-led chip 31, micro-led chip 31
Including first electrode 310 and second electrode 311, patterned opaque line layer 20 includes multiple first conducting wires 200 and more
A the second conducting wire 210 corresponding with the first conducting wire, 310 electricity of first end and first electrode of the first conducting wire 200
Connection, the second conducting wire 210 are electrically connected with second electrode 311.Micro-led chip (Micro LED, μ LED) core
Chip size is at 100 microns hereinafter, one third closer than normal LED chip size reduction is to a quarter.
It optionally, based on the above technical solution, referring to figs. 2 and 3, further include being formed in patterned transparent thread
On road floor 20, and multiple pad structures between patterned opaque line layer 20 and micro-led chip 31
40, pad structure 40 is arranged in a one-to-one correspondence with micro-led chip 31, and pad structure 40 includes the first pad 400 and the
Two pads 410, the first pad 400 are electrically connected with first electrode, and the second pad 410 is electrically connected with second electrode 311, and first is conductive
The first end of route 200 is electrically connected with the first pad 400, and the second conducting wire 210 is electrically connected with the second pad 410.
Optionally, based on the above technical solution, referring to figs. 2 and 3, further include transparent enclosure glue 50, be formed in
On display unit 30.
Optionally, based on the above technical solution, the spacing of two neighboring display unit is greater than or equal to 3 millimeters,
And it is less than or equal to 5 millimeters.To guarantee that Penetration ration is greater than 80%, lattice distance minimum can accomplish 3mm.
It optionally, based on the above technical solution, referring to fig. 2, further include flexible circuit board 60 and control chip 70；
Flexible circuit board 60 attaches on the transparent substrate 10, is electrically connected by patterned opaque line layer 20 with display unit 30, controls
Coremaking piece 70 is electrically connected by flexible circuit board 60 with patterned opaque line layer 20.
Embodiment two
With display panel provided by the above embodiment be based on same design, by Fig. 2 shows display panel for, the present invention
Embodiment provides a kind of preparation method of display panel, and Fig. 4 is a kind of preparation side for display panel that inventive embodiments provide
The flow diagram of method, referring to fig. 4, the preparation method include the following steps:
Step 410 provides transparent substrate；
By taking Fig. 5 as an example, transparent substrate 10 is provided.
Step 420 forms patterned opaque line layer on the transparent substrate.
Optionally, referring to Fig. 6, step 420 forms patterned opaque line layer on the transparent substrate, specifically includes as follows
Step:
Step 4201 forms transparency conducting layer on the transparent substrate.
Referring to Fig. 7, transparency conducting layer 21 is formed on the transparent substrate 10.
Transparency conducting layer 21 illustratively can be nano-silver thread, the transparent conductive films such as metal grill or graphene.
Specifically, can be by the chemical platings such as physical coatings method or chemical thought, low-pressure chemical vapor deposition such as sputtering, evaporating
Film method deposits layer of transparent conductive layer 21 on the transparent substrate 10.The surface resistance of transparency conducting layer 21 is less than 10 Ω.
Multiple pad structures are formed in step 4202, transparency conducting layer, pad structure includes the first pad and the second pad.
Referring to Fig. 8, multiple pad structures 40 are formed on transparency conducting layer 21, pad structure 40 includes the first pad 400
With the second pad 410.
Step 4203 performs etching transparency conducting layer, forms patterned opaque line layer, and the of the first conducting wire
One end is electrically connected with the first pad, and the second conducting wire is electrically connected with the second pad.
It is performed etching referring to Fig. 9, to transparency conducting layer 21, forms patterned opaque line layer 20, it is patterned transparent
Line layer 20 includes the first conducting wire 200 and the second conducting wire 210, and the first end of the first conducting wire 200 is welded with first
Disk 400 is electrically connected, and the second conducting wire 210 is electrically connected with the second pad 410.Transparency conducting layer 21 is performed etching, figure is formed
There are two types of modes for the opaque line layer 20 of case.First way: etching method.Layer of transparent is uniformly prepared on entire substrate to lead
Electric layer 21 prepares patterned opaque line layer 20 in such a way that the laser moment crosses photoetching.The second way is according to electricity
Road figure directly prints transparency conducting layer 21.
Step 430 forms multiple display units on patterned opaque line layer, and display unit is arranged in array, and
It is electrically connected with patterned opaque line layer.
The embodiment of the invention provides a kind of preparation method of display panel, transparent substrate is chosen, and in transparent substrate
The display panel of the upper display unit that patterned opaque line layer and the arrangement of multiple arrays are set, display unit and patterning
Opaque line layer electrical connection, to solve the not high technical problem of transparent display panel Penetration ration in the prior art.
Optionally, display unit includes micro-led chip, and micro-led chip includes first electrode
And second electrode, patterned opaque line layer include multiple first conducting wires and multiple corresponding with the first conducting wire
The first end of two conducting wires, the first conducting wire is electrically connected with first electrode, and the second conducting wire is electrically connected with second electrode.
Referring to Figure 10, multiple micro-led chips 31, miniature hair are formed on patterned opaque line layer 20
Luminous diode chip 31 is arranged in array, and is electrically connected with patterned opaque line layer 20.Micro-led chip 31
Including first electrode 310 and second electrode 311, patterned opaque line layer 20 includes multiple first conducting wires 200 and more
A second conducting wire 210 corresponding with the first conducting wire 200, the first end and first electrode 310 of the first conducting wire 200
Electrical connection, the second conducting wire 210 are electrically connected with second electrode 311.It is formed on patterned opaque line layer 20 multiple micro-
Type light-emitting diode chip for backlight unit 31 is realized by flood tide transfer techniques.It should be noted that through the equipment of high accuracy, by flood tide
The LED grain of micron grade be arranged on target base plate or circuit, and this program is referred to as flood tide transfer (Mass
Transfer) technology.
Optionally, based on the above technical solution, after step 430, further includes:
Transparent encapsulated layer is formed on the display unit.
Referring to Figure 11, transparent encapsulated layer 50 is formed on display unit 30.Encapsulated layer be it is colorless and transparent, further increase
Cross rate.
It optionally, based on the above technical solution, further include forming 60 He of flexible circuit board after step 430
Chip 70 is controlled, specifically, referring to fig. 2, flexible circuit board 60 attaches on the transparent substrate 10, passes through patterned opaque line
Layer 20 is electrically connected with display unit 30, and control chip 70 is electrically connected by flexible circuit board 60 with patterned opaque line layer 20
It connects.Flexible circuit board 60 connects external control chip 70, to form different circuit loops.When micro-led chip
31 when receiving the driving signal of control chip 70, the work of micro-led display panel.
Preparation method provided in an embodiment of the present invention, micro-led chip are directly welded on transparent substrate
, it is not first welded after encapsulation in the prior art, and packaging plastic is colorless and transparent transparent encapsulated layer, is further increased penetrating
Rate.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this
Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept
In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of display panel characterized by comprising
Transparent substrate；
The patterned opaque line layer being formed on the transparent substrate；
The multiple display units being formed on the patterned opaque line layer, the display unit are arranged in array, and with
The patterned opaque line layer electrical connection.
2. display panel according to claim 1, which is characterized in that
The display unit includes micro-led chip, and the micro-led chip includes first electrode and
Two electrodes, the patterned opaque line layer include multiple first conducting wires and multiple corresponding with first conducting wire
The second conducting wire, the first end of first conducting wire is electrically connected with the first electrode, second conducting wire
It is electrically connected with the second electrode.
3. display panel according to claim 2, which is characterized in that
It further include being formed on the patterned opaque line layer, and be located at the patterned opaque line layer and described micro-
Multiple pad structures between type light-emitting diode chip for backlight unit, the pad structure and the micro-led chip one are a pair of
It should be arranged, the pad structure includes the first pad and the second pad, and first pad is electrically connected with the first electrode, institute
The second pad to be stated to be electrically connected with the second electrode, the first end of first conducting wire is electrically connected with first pad,
Second conducting wire is electrically connected with second pad.
4. display panel according to claim 1, which is characterized in that
Further include transparent enclosure glue, is formed on the display unit.
5. display panel according to claim 1, which is characterized in that
The spacing of the two neighboring display unit is greater than or equal to 3 millimeters, and is less than or equal to 5 millimeters.
6. display panel according to claim 1, which is characterized in that
It further include flexible circuit board and control chip；
The flexible circuit board is attached on the transparent substrate, single by the patterned opaque line layer and the display
Member electrical connection, the control chip are electrically connected by the flexible circuit board with the patterned opaque line layer.
7. a kind of preparation method of display panel, based on any display panel of claim 1-6, which is characterized in that packet
It includes:
Transparent substrate is provided；
Patterned opaque line layer is formed on the transparent substrate；
Form multiple display units on the patterned opaque line layer, the display unit is arranged in array, and with institute
State patterned opaque line layer electrical connection.
8. the preparation method of display panel according to claim 7, which is characterized in that
The display unit includes micro-led chip, and the micro-led chip includes first electrode and
Two electrodes, the patterned opaque line layer include multiple first conducting wires and multiple corresponding with first conducting wire
The second conducting wire, the first end of first conducting wire is electrically connected with the first electrode, second conducting wire
It is electrically connected with the second electrode.
9. the preparation method of display panel according to claim 8, which is characterized in that
It is described to form patterned opaque line layer on the transparent substrate and specifically comprise the following steps:
Transparency conducting layer is formed on the transparent substrate；
Multiple pad structures are formed on the transparency conducting layer, the pad structure includes the first pad and the second pad；
The transparency conducting layer is performed etching, patterned opaque line layer, the first end of first conducting wire are formed
It is electrically connected with first pad, second conducting wire is electrically connected with second pad.
10. the preparation method of display panel according to claim 7, which is characterized in that
It further include forming transparent encapsulated layer on the display unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811001848.0A CN109119430A (en) | 2018-08-30 | 2018-08-30 | display panel and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811001848.0A CN109119430A (en) | 2018-08-30 | 2018-08-30 | display panel and preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN109119430A true CN109119430A (en) | 2019-01-01 |
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ID=64861397
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811001848.0A Pending CN109119430A (en) | 2018-08-30 | 2018-08-30 | display panel and preparation method |
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| CN (1) | CN109119430A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111028702A (en) * | 2019-12-05 | 2020-04-17 | 湖南创瑾科技有限公司 | Method for manufacturing LED transparent display screen and display screen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207352908U (en) * | 2017-11-07 | 2018-05-11 | 上海九山电子科技有限公司 | A kind of micro-led display panel |
| CN108321281A (en) * | 2018-03-30 | 2018-07-24 | 南方科技大学 | micro-L ED display panel and micro-L ED display device |
-
2018
- 2018-08-30 CN CN201811001848.0A patent/CN109119430A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207352908U (en) * | 2017-11-07 | 2018-05-11 | 上海九山电子科技有限公司 | A kind of micro-led display panel |
| CN108321281A (en) * | 2018-03-30 | 2018-07-24 | 南方科技大学 | micro-L ED display panel and micro-L ED display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111028702A (en) * | 2019-12-05 | 2020-04-17 | 湖南创瑾科技有限公司 | Method for manufacturing LED transparent display screen and display screen |
| CN111028702B (en) * | 2019-12-05 | 2022-01-25 | 湖南创瑾科技有限公司 | Method for manufacturing LED transparent display screen and display screen |
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