CN109103263A - Thin film transistor and its manufacturing method, the production method of display panel - Google Patents
Thin film transistor and its manufacturing method, the production method of display panel Download PDFInfo
- Publication number
- CN109103263A CN109103263A CN201810907928.6A CN201810907928A CN109103263A CN 109103263 A CN109103263 A CN 109103263A CN 201810907928 A CN201810907928 A CN 201810907928A CN 109103263 A CN109103263 A CN 109103263A
- Authority
- CN
- China
- Prior art keywords
- passivation layer
- layer
- film transistor
- thin film
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000002161 passivation Methods 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 32
- 238000000137 annealing Methods 0.000 claims description 19
- 239000002904 solvent Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- 230000003068 static effect Effects 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 10
- 238000002485 combustion reaction Methods 0.000 claims description 9
- 230000032683 aging Effects 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- 239000000446 fuel Substances 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 6
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 6
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052773 Promethium Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008901 benefit Effects 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 3
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 17
- 239000001301 oxygen Substances 0.000 abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 abstract description 17
- 239000010408 film Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 17
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 8
- 229910052747 lanthanoid Inorganic materials 0.000 description 6
- 150000002602 lanthanoids Chemical class 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000009841 combustion method Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- YBYGDBANBWOYIF-UHFFFAOYSA-N erbium(3+);trinitrate Chemical compound [Er+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YBYGDBANBWOYIF-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- KUBYTSCYMRPPAG-UHFFFAOYSA-N ytterbium(3+);trinitrate Chemical compound [Yb+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O KUBYTSCYMRPPAG-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- MWFSXYMZCVAQCC-UHFFFAOYSA-N gadolinium(iii) nitrate Chemical compound [Gd+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O MWFSXYMZCVAQCC-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910001460 tantalum ion Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- -1 ytterbium ion Chemical class 0.000 description 1
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The embodiment of the invention discloses a kind of thin film transistor and its manufacturing methods, the production method of display panel.The thin film transistor (TFT) includes: underlay substrate；Grid layer, gate insulating layer, active layer and the source-drain electrode layer being formed on the underlay substrate, the active layer includes first area, and the first area is not covered by the grid layer and the source-drain electrode layer；It is formed in the passivation layer that the active layer deviates from the underlay substrate side, and the passivation layer is directly contacted with the first area of the active layer；Wherein, the active layer and the passivation layer are doped with rare earth element.Thin film transistor (TFT) water resistant oxygen ability can be improved in thin film transistor (TFT) provided by the invention.
Description
Technical field
The present embodiments relate to semiconductor technology more particularly to a kind of thin film transistor and its manufacturing methods, display surface
The production method of plate.
Background technique
With the continuous development of display technology, (such as mobile phone, computer, the TV and can of the electronic equipment with display panel
Wearable device etc.) at essential a part for people's lives.
In existing display panel, thin film transistor (TFT) is an important device, is mainly used for cooperating other devices
Such as capacitor realization is shown.In all kinds of thin film transistor (TFT)s, metal oxide thin-film transistor due to mobility with higher,
The compatibility of lower leakage current, manufacturing process has broader in liquid crystal display panel and organic light emitting display panel field
Application prospect.But the active layer made of metal oxide is exposed to its stability and reliability in air or water vapour environment
It easily deteriorates, seriously limits its use commercially.
Summary of the invention
The present invention provides a kind of thin film transistor and its manufacturing method, the production method of display panel, to improve film crystalline substance
Body pipe water resistant oxygen ability.
In a first aspect, the embodiment of the invention provides a kind of thin film transistor (TFT), which includes:
Underlay substrate；
Grid layer, gate insulating layer, active layer and the source-drain electrode layer being formed on the underlay substrate, the active layer packet
First area is included, the first area is not covered by the grid layer and the source-drain electrode layer；
It is formed in the passivation layer that the active layer deviates from the underlay substrate side, and the passivation layer and the active layer
First area directly contact；
Wherein, the active layer and the passivation layer are doped with rare earth element.
Further, the active layer doped with gadolinium, nickel, aluminium, silicon, scandium, yttrium, titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, lanthanum,
At least one of neodymium, cerium, praseodymium, promethium, samarium and europium.
Further, the passivation layer is doped at least one of cerium, samarium, gadolinium, erbium and thulium.
Second aspect, the embodiment of the invention provides a kind of production method of thin film transistor (TFT), the systems of the thin film transistor (TFT)
Make method for making the thin film transistor (TFT) provided in an embodiment of the present invention described in any one；
The production method of the thin film transistor (TFT) includes:
Underlay substrate is provided；
Grid, gate insulating layer, active layer and source-drain electrode layer are formed on the underlay substrate, wherein the active layer
Including first area, the first area is not covered by the grid layer and the source-drain electrode layer；And the active layer is mixed
It is miscellaneous to have rare earth element；
Passivation layer, the passivation layer and institute are formed away from the side of the underlay substrate in the active layer using solwution method
The first area for stating active layer directly contacts；And the passivation layer is doped with rare earth element.
Further, passivation layer is formed away from the side of the underlay substrate in the active layer using solwution method, comprising:
Compound comprising doped chemical is added in solvent, passivation layer stoste is obtained by filtration in stirring, static aging；
Using the method for spin coating, the passivation layer stoste is coated in passivation layer predeterminable area, the passivation layer stoste
The first area of the active layer is covered, at least to form passivation layer；
Under vacuum conditions, the passivation layer is made annealing treatment.
Further, the method using spin coating is executed, the passivation layer stoste is coated on passivation layer predeterminable area
Interior, the passivation layer stoste at least covers the first area of the active layer, and number the step of to form passivation layer is
At least twice.
Further, it is described under vacuum conditions, while annealing to the passivation layer, further includes:
The passivation layer is irradiated using deep UV.
It is further, described to form passivation layer away from the side of the underlay substrate in the active layer using solwution method,
Include:
Compound comprising doped chemical, situ combustion fuel are added to solvent, stirring, static aging are obtained by filtration
Passivation layer stoste；
Using the method for spraying, the passivation layer stoste is coated in passivation layer predeterminable area, the passivation layer stoste
The first area of the active layer is covered, at least to form passivation layer；
Under vacuum conditions, the passivation layer is made annealing treatment.
The third aspect, the embodiment of the invention also provides a kind of production method of display panel, the production of the display panel
Method includes the production method of the thin film transistor (TFT) provided in an embodiment of the present invention described in any one.
The embodiment of the present invention is by being arranged passivation layer, and passivation layer and active layer away from the side of underlay substrate in active layer
First area directly contact, active layer and passivation layer solve existing thin film transistor (TFT) because will doped with rare earth element
The active layer made of metal oxide is exposed in air or water vapour environment, causes thin film transistor (TFT) stability and reliability bad
The problem of change, realizes the thin film transistor (TFT) water resistant oxygen ability that improves, and then improves the effect of thin film transistor (TFT) stability and reliability
Fruit.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 2 is a kind of flow chart of thin film transistor (TFT) production method provided in an embodiment of the present invention；
Fig. 3 is the flow chart of another thin film transistor (TFT) production method provided in an embodiment of the present invention；
Fig. 4 is the flow chart of another thin film transistor (TFT) production method provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
The embodiment of the invention provides a kind of thin film transistor (TFT)s.Fig. 1 is a kind of film crystal provided in an embodiment of the present invention
The structural schematic diagram of pipe.Referring to Fig. 1, which includes: underlay substrate 10；The grid layer being formed on underlay substrate 10
11, gate insulating layer 12, active layer 13 and source-drain electrode layer 14, active layer 13 include first area 131, and first area 131 is not
It is covered by grid layer 11 and source-drain electrode layer 14；It is formed in the passivation layer 15 that active layer 13 deviates from 10 side of underlay substrate, and blunt
Change layer 15 directly to contact with the first area 131 of active layer 13；Wherein, active layer 13 and passivation layer 15 are doped with rare earth member
Element.
The embodiment of the present invention substantially utilizes passivation by the way that passivation layer is arranged away from the side of underlay substrate in active layer
Layer obstructs extraneous water oxygen, prevents it to the erosion of thin film transistor (TFT), solves existing thin film transistor (TFT) because that will be aoxidized by metal
The problem of active layer made of object is exposed in air or water vapour environment, causes thin film transistor (TFT) stability and deteriorated reliability,
The thin film transistor (TFT) water resistant oxygen ability that improves is realized, and then improves the effect of thin film transistor (TFT) stability and reliability.
In addition, setting passivation layer is directly contacted with the first area of active layer, active layer and passivation layer are doped with rare earth
Element is because the rare earth element that passivation layer 15 adulterates has compared with strong electronegativity, it is easier to oxidation occur and reduce in its inside
Lacking oxygen, keep 15 film of passivation layer finer and close, thus weaken environment on active layer 13 influence.
Further, in above-mentioned technical proposal, active layer 13 and passivation layer 15 is set doped with rare earth element, can be made
Passivation layer 15 after must adulterating is reacted with 13 surface portion of active layer, qualitatively modifies active layer 13 and passivation layer 15 directly connects
The weak chemical bond at the interface of touching to realize that the contact between active layer 13 and passivation layer 15 is modified, while improving active layer 13
Cohesive force between passivation layer 15 effectively improves the device performance of thin film transistor (TFT).
Optionally, active layer 13 is doped with gadolinium Cd, nickel, aluminium Al, silicon Si, scandium Sc, yttrium Y, titanium Ti, zirconium Zr, hafnium Hf, niobium
At least one of Nb, tantalum Ta, molybdenum Mo, tungsten W, lanthanum La, neodymium Nd, cerium Ce, praseodymium Pr, promethium Pm, samarium Sm and europium Eu.What is be arranged in this way is good
Place is can to promote the performances such as mobility and the stability of active layer 13.
Optionally, the material of main part of active layer 13 includes at least one of materials described below, and the oxide comprising In includes
The oxide of Zn, the oxide comprising Ga and the oxide comprising Sn.Optionally, in order to enable active layer 13 have preferably move
The performances such as shifting rate and stability are arranged in active layer 13, and the value range of the atomic ratio of material of main part and doped chemical is big
In or be equal to 0.01, and be less than or equal to 1.
Optionally, passivation layer 15 is doped at least one of cerium Ce, samarium Sm, gadolinium Gd, erbium Er and thulium Tm.It is arranged in this way
Benefit is the cohesive force that can be improved between active layer 13 and passivation layer 15, while effectively barrier water oxygen invading to active layer 13
Erosion.
Optionally, the material of main part of passivation layer 15 includes at least one of materials described below, Pr2O3、Tb2O3、Dy2O3、
Yb2O3、V2O5、Nb2O5、Ta2O5、Al2O3And Hf2O3.In passivation layer 15, the value of the atomic ratio of material of main part and doped chemical
Range be more than or equal to 0.01, and be less than or equal to 0.4.
With continued reference to Fig. 1, optionally, passivation layer 15 also covers source-drain electrode layer 14, and the benefit being arranged in this way is to prevent water oxygen
Erosion to source-drain electrode layer 14 improves the performance of thin film transistor (TFT).
It should be noted that illustratively, the thin film transistor (TFT) which is bottom grating structure is set in Fig. 1,
This is only the specific example of the application, rather than the limitation to the application.In actual setting, film crystal can also be set
Pipe is the thin film transistor (TFT) of top gate structure.
The embodiment of the invention provides a kind of production methods of thin film transistor (TFT).The production method of the thin film transistor (TFT) is used for
Any one thin film transistor (TFT) provided in an embodiment of the present invention.Fig. 2 is a kind of film crystal control provided in an embodiment of the present invention
Make the flow chart of method.Below with reference to Fig. 1 and Fig. 2, the production method of thin film transistor (TFT) provided in an embodiment of the present invention is carried out
It is described in detail.
Referring to Fig. 1 and Fig. 2, the production method of the thin film transistor (TFT) includes:
S110, underlay substrate 10 is provided.
S120, grid 11, gate insulating layer 12, active layer 13 and source-drain electrode layer 14 are formed on underlay substrate 10, wherein
Active layer 13 includes first area 131, and first area 131 is not covered by grid layer 11 and source-drain electrode layer 14；And active layer
13 doped with rare earth element.
S130, using solwution method active layer 13 away from underlay substrate 10 side formed passivation layer 15, passivation layer 15 with
The first area 131 of active layer 13 directly contacts；And passivation layer 15 is doped with rare earth element.
The embodiment of the present invention, doped with rare earth element, deviates from lining in active layer 13 using solwution method by setting active layer 13
The side of substrate 10 forms passivation layer 15, and passivation layer 15 is directly contacted with the first area 131 of active layer 13；And passivation layer 15
Doped with rare earth element, extraneous water oxygen substantially is obstructed using passivation layer, prevents it from solving to the erosion of thin film transistor (TFT)
Existing thin film transistor (TFT) causes film brilliant because the active layer made of metal oxide is exposed in air or water vapour environment
The problem of body pipe stability and deteriorated reliability, realizes the thin film transistor (TFT) water resistant oxygen ability that improves, and then improves film crystal
The effect of pipe stability and reliability.And in this way setting active layer 13 and passivation layer 15 between cohesive force it is larger, prevent include
The semiconductor devices of the thin film transistor (TFT) is when in use because the bad phenomenons such as damage of colliding with occur.
It should also be noted that, the currently used method that can be used to form passivation layer mainly has plasma-reinforced chemical gas
Mutually deposition, magnetron sputtering, pulse laser deposition and atomic layer deposition etc., these techniques all need higher vacuum environment, production
Condition is harsh, and manufacturing cost is higher, and in addition plasma ion assisted deposition technology is inevitably to the channel region of thin film transistor (TFT)
Certain etching injury is generated, so that thin-film transistor performance be made to deteriorate.In practice, it can also be formed using sol-gel method
Passivation layer, but this method needs to use organic material, such as polymethylacrylic acid acid methyl esters (PMMA), dimethyl silicone polymer
(PDMS) and polyacrylate (PS) etc., organic material itself water and oxygen barrier property is poor and there are organic solution evaporation infiltrations etc.
Problem, the ability that can not only make passivation layer have preferably barrier water oxygen, is also easy to deleterious film transistor performance.And
It makes to form passivation layer using solwution method in the above-mentioned technical solutions, it is low for equipment requirements, manufacture craft is simple, and be formed by
The ability that passivation layer obstructs water oxygen is preferable.
Fig. 3 is the flow chart of another thin film transistor (TFT) production method provided in an embodiment of the present invention.Fig. 3 is in Fig. 2
One specific example in the production method of the thin film transistor (TFT), S130 is optimized for referring to Fig. 3, comprising:
S131, the compound comprising doped chemical is added in solvent, passivation layer is obtained by filtration in stirring, static aging
Stoste.
Optionally, the solvent of passivation layer includes acetonitrile and ethylene glycol, and optionally, the volume ratio of acetonitrile and ethylene glycol is 35:
65；In the passivation layer stoste configured, the range of the concentration of metal ions of the compound comprising doped chemical be more than or equal to
0.01mol/L, and it is less than or equal to 0.3mol/L.
S132, the method using spin coating, passivation layer stoste is coated in passivation layer predeterminable area, and passivation layer stoste is at least
The first area of active layer is covered, to form passivation layer.
S133, under vacuum conditions, makes annealing treatment passivation layer.
Passivation layer is formed using production in above-mentioned technical proposal, it is low for equipment requirements, manufacture craft is simple, and be formed by
The ability of the barrier water oxygen of passivation layer is preferable.
Since organic matter (i.e. the solvent of passivation layer) residual is to influence film (i.e. passivation layer) prepared by solution processing method
One of principal element of performance, the organic group in these remaining organic matters can act on deterioration film with active layer first area
Transistor performance, above-mentioned technical proposal under vacuum conditions, make annealing treatment passivation layer, can effectively remove by setting
These organic matters improve thin-film transistor performance.
Further, in the above-mentioned technical solutions, can be set and execute the number of S132 is at least twice.This is because molten
Generally there are more cavity or holes for the passivation layer film of liquid processing method preparation, so as to cause the consistency phase of passivation layer film
To reduction, environmental gas makes device performance degradation possibly through cavity or hole and the effect of thin film transistor (TFT) first area.It is logical
Crossing setting and executing the number of S132 is that essence is cavity or gap to be eliminated using multilayer of spin-on method, and then improve at least twice
Passivation layer density of film and quality, reducing environment influences first area.
Further, while executing S133, further includes: irradiate passivation layer using deep UV (deep-UV).It sets in this way
Setting can further promote the decomposition of organic matter (solvent of such as passivation layer) to remove.
In order to make it easy to understand, specific example is provided with regard to S131-S133 in Fig. 3 below,
Example one
The specific structure of oxide thin film transistor is as shown in Figure 1, include Yb for passivation layer material of main part2O3Film
The poor problem of transistor performance, the present embodiment propose the doping using lanthanide series rare-earth elements Er, to improve active layer main body
Material includes the electric property of the thin film transistor (TFT) of Pr-IZO.For the ease of explaining, the semi-finished product that S120 in Fig. 3 is completed in definition are thin
Film transistor is intermediate state thin film transistor (TFT).Passivation layer 15 it is specific the production method is as follows:
1. weigh a certain amount of ytterbium nitrate, erbium nitrate in proportion in clean 5ml solvent bottle, be added solvent acetonitrile and
The solution concentration of ethylene glycol, ytterbium ion is 0.01mol/L, and in stirring at normal temperature 12h hours, static aging 12 hours was obtained by filtration
Light yellow transparent solution (i.e. passivation layer stoste).
Wherein, respectively as the precursor material of metal oxide, ytterbium oxide is thin film transistor (TFT) for ytterbium nitrate, erbium nitrate
Main passivation material plays protective film transistor；And erbium is doped chemical, modifies and be passivated the weak of active layer interface
Chemical bond, the contact improved between active layer and ytterbium oxide passivation layer is modified, while improving the cohesive force between film.
2. intermediate state thin film transistor (TFT) is placed on spin coater, the passivation layer stoste of 50ul, drop coating are pipetted using liquid-transfering gun
On intermediate state thin film transistor (TFT), static 30s, forward: 500rpm；Time: 5s；After turn: 4000rpm；Time: 30s；Then right
It is formed by the preceding baking that film carries out 120 DEG C.Repeat this step 2 times or 3 times.
3. the intermediate state thin film transistor (TFT) finished using deep UV (deep-UV) irradiation spin coating and baking, while vacuum
Annealing, used deep-ultraviolet wavelengths are 254nm, and irradiation time 30min, annealing temperature is 300 DEG C.
Example two
The specific structure of oxide thin film transistor is as shown in Figure 1, include Yb for passivation layer material of main part2O3Film
The poor problem of transistor performance, the present embodiment propose the doping using lanthanide series rare-earth elements Sm, to improve active layer main body
Material includes the electric property of the thin film transistor (TFT) of Ta-IZO.The specific production method of passivation layer 15 is similar with example one, herein
It repeats no more.
Example three
The specific structure of oxide thin film transistor is as shown in Figure 1, include Tb for passivation layer material of main part2O3Film
The poor problem of transistor performance, the present embodiment propose the doping using lanthanide series rare-earth elements Ce, to improve active layer main body
Material includes the electric property of the thin film transistor (TFT) of Pr-IZO.The specific production method of passivation layer 15 is similar with example one, herein
It repeats no more.
Fig. 4 is the flow chart of another thin film transistor (TFT) production method provided in an embodiment of the present invention.Fig. 4 is in Fig. 2
In the production method of the thin film transistor (TFT), S130 is optimized for referring to fig. 4 for one specific example, comprising:
S131 ', the compound comprising doped chemical, situ combustion fuel are added to solvent, stirring, static aging, mistake
Filter obtains passivation layer stoste.
S132 ', the method using spraying, passivation layer stoste is coated in passivation layer predeterminable area, and passivation layer stoste is extremely
The first area of active layer is covered, less to form passivation layer.
S133 ', under vacuum conditions, makes annealing treatment passivation layer.
Passivation layer is formed using production in above-mentioned technical proposal, it is low for equipment requirements, manufacture craft is simple, and be formed by
The ability of the barrier water oxygen of passivation layer is preferable.
In addition, when making passivation layer stoste, situ combustion fuel is added, in the process of spraying in above-mentioned technical proposal
It is middle to put thermogenetic thermal energy reduction annealing temperature using fuel, and then achieve the purpose that reduce energy consumption.
In order to make it easy to understand, specific example is provided with regard to S131 '-S133 ' in Fig. 4 below,
Example four
The specific structure of oxide thin film transistor is as shown in Figure 1, include Ta for passivation layer material of main part2O5Film
The poor problem of transistor performance, the present embodiment propose the doping and intermolecular situ combustion method using lanthanide series rare-earth elements Gd
(combustion), to reduce passivation layer annealing temperature, the preparation of large area film is realized in combination with ultrasonic spraying process,
To improve the electric property that passivation layer includes NAIZO (wherein, N represents Nd, and A represents Al) thin film transistor (TFT).For the ease of explaining,
The semi-finished product thin film transistor (TFT) that S120 in Fig. 3 is completed in definition is intermediate state thin film transistor (TFT).The specific production method of passivation layer 15
It is as follows:
Specific method for manufacturing thin film is as follows:
1. weigh a certain amount of tantalic chloride, gadolinium nitrate in proportion in clean 5ml solvent bottle, be added solvent acetonitrile and
Ethylene glycol, situ combustion fuel (such as acetylacetone,2,4-pentanedione, urea or citric acid), the solution concentration of tantalum ion are 0.2mol/L (this
When, solvent and situ combustion fuel can regard solvent as), in stirring at normal temperature 16h hours, static aging 24 hours was obtained by filtration
Light yellow transparent solution (i.e. passivation layer stoste).
2. the viscosity of control spraying passivation layer stoste (being at this time suspension) used is 5-10cp, in addition in passivation layer original
The volatility of polyethylene glycol (PEG) control passivation layer stoste is added in liquid, it is right using ultrasound atomization system under normal temperature environment
Forerunner's liquid suspension solution is effectively dispersed, and is reduced and is reunited.The frequency for controlling nozzle in ultrasound atomization system is 120KHz,
It is 10mm that nozzle is controlled simultaneously at a distance from intermediate state thin film transistor (TFT), and it is 0.5mL/min that hydrojet, which injects pump discharge, and nozzle is mobile
Speed is 5mm/s.
3. then the first static 60s of the intermediate state thin film transistor (TFT) that finishes of spraying is carried out front baking annealing under vacuum environment
120 DEG C (time 15min), then 200 DEG C (time 60min) of annealing is dried after carrying out, being formed by passivation layer film thickness is 50nm.
Example five
The specific structure of oxide thin film transistor is as shown in Figure 1, include Tb for passivation layer material of main part2O3Film
The poor problem of transistor performance, the present embodiment propose the doping and intermolecular situ combustion method using lanthanide series rare-earth elements Tm
(combustion), to reduce passivation layer annealing temperature, the preparation of large area film is realized in combination with ultrasonic spraying process,
To improve the electric property that passivation layer includes IGZO thin film transistor (TFT).For the ease of explaining, definition complete half of S120 in Fig. 3 at
Product thin film transistor (TFT) is intermediate state thin film transistor (TFT).
The specific production method of passivation layer 15 is similar with example four, sprays specific technological parameter modification are as follows: control ultrasound
The frequency of nozzle is 120KHz in atomization system, while controlling nozzle at a distance from intermediate state thin film transistor (TFT) is 15mm, hydrojet
Injection pump discharge is 0.4mL/min, and nozzle movement speed is 5mm/s.Annealing design parameter is revised as, the centre that spraying is finished
Then the first static 60s of state thin film transistor (TFT) carries out front baking and anneals 120 DEG C (time 15min), then dried after carrying out 250 DEG C of annealing (when
Between 60min), film thickness 45nm.
Example six
The specific structure of oxide thin film transistor is as shown in Figure 1, include Yb for passivation layer material of main part2O3Film
The poor problem of transistor performance, the present embodiment propose the doping and intermolecular situ combustion method using lanthanide series rare-earth elements Er
(combustion), to reduce passivation layer annealing temperature, the preparation of large area film is realized in combination with ultrasonic spraying process,
To improve the electric property that passivation layer includes IGZO thin film transistor (TFT).The specific production method of passivation layer 15 is similar with example four,
Details are not described herein again.
The embodiment of the present invention also provides a kind of production method of display panel, and the production method of the display panel includes this hair
The production method for any one thin film transistor (TFT) that bright embodiment provides.
The embodiment of the present invention, doped with rare earth element, deviates from substrate in active layer 13 using solwution method by setting active layer
The side of substrate forms passivation layer, and passivation layer is directly contacted with the first area of active layer；And passivation layer is doped with rare earth element,
Extraneous water oxygen substantially is obstructed using passivation layer, prevents it from solving existing film crystal to the erosion of thin film transistor (TFT)
Guan Yin active layer made of metal oxide is exposed in air or water vapour environment, causes thin film transistor (TFT) stability and can
The problem of by property deterioration, the thin film transistor (TFT) water resistant oxygen ability that improves is realized, and then improves thin film transistor (TFT) stability and reliable
The effect of property.And the cohesive force in this way between setting active layer and passivation layer is larger, prevents partly leading comprising the thin film transistor (TFT)
Body device is when in use because the bad phenomenons such as damage of colliding with occur.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this
Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept
In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (9)
1. a kind of thin film transistor (TFT) characterized by comprising
Underlay substrate；
Grid layer, gate insulating layer, active layer and the source-drain electrode layer being formed on the underlay substrate, the active layer include the
One region, the first area are not covered by the grid layer and the source-drain electrode layer；
It is formed in the passivation layer that the active layer deviates from the underlay substrate side, and the of the passivation layer and the active layer
One region directly contacts；
Wherein, the active layer and the passivation layer are doped with rare earth element.
2. thin film transistor (TFT) according to claim 1, which is characterized in that
The active layer is doped with gadolinium, nickel, aluminium, silicon, scandium, yttrium, titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, lanthanum, neodymium, cerium, praseodymium, promethium, samarium
At least one of with europium.
3. thin film transistor (TFT) according to claim 1, which is characterized in that
The passivation layer is doped at least one of cerium, samarium, gadolinium, erbium and thulium.
4. a kind of production method of thin film transistor (TFT), which is characterized in that the production method of the thin film transistor (TFT) is for making power
Benefit requires thin film transistor (TFT) described in any one of 1-3；
The production method of the thin film transistor (TFT) includes:
Underlay substrate is provided；
Grid, gate insulating layer, active layer and source-drain electrode layer are formed on the underlay substrate, wherein the active layer includes
First area, the first area are not covered by the grid layer and the source-drain electrode layer；And the active layer doped with
Rare earth element；
Passivation layer is formed away from the side of the underlay substrate in the active layer using solwution method, the passivation layer has with described
The first area of active layer directly contacts；And the passivation layer is doped with rare earth element.
5. the production method of thin film transistor (TFT) according to claim 4, which is characterized in that
Passivation layer is formed away from the side of the underlay substrate in the active layer using solwution method, comprising:
Compound comprising doped chemical is added in solvent, passivation layer stoste is obtained by filtration in stirring, static aging；
Using the method for spin coating, the passivation layer stoste is coated in passivation layer predeterminable area, the passivation layer stoste is at least
The first area of the active layer is covered, to form passivation layer；
Under vacuum conditions, the passivation layer is made annealing treatment.
6. the production method of thin film transistor (TFT) according to claim 5, which is characterized in that
The method using spin coating is executed, the passivation layer stoste is coated in passivation layer predeterminable area, the passivation layer
Stoste at least covers the first area of the active layer, and number the step of to form passivation layer is at least twice.
7. the production method of thin film transistor (TFT) according to claim 5, which is characterized in that
It is described under vacuum conditions, while annealing to the passivation layer, further includes:
The passivation layer is irradiated using deep UV.
8. the production method of thin film transistor (TFT) according to claim 4, which is characterized in that
It is described to form passivation layer away from the side of the underlay substrate in the active layer using solwution method, comprising:
Compound comprising doped chemical, situ combustion fuel are added to solvent, passivation is obtained by filtration in stirring, static aging
Layer stoste；
Using the method for spraying, the passivation layer stoste is coated in passivation layer predeterminable area, the passivation layer stoste is at least
The first area of the active layer is covered, to form passivation layer；
Under vacuum conditions, the passivation layer is made annealing treatment.
9. a kind of production method of display panel, which is characterized in that including the described in any item thin film transistor (TFT)s of claim 4-8
Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810907928.6A CN109103263B (en) | 2018-08-10 | 2018-08-10 | Thin film transistor, manufacturing method thereof and manufacturing method of display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810907928.6A CN109103263B (en) | 2018-08-10 | 2018-08-10 | Thin film transistor, manufacturing method thereof and manufacturing method of display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109103263A true CN109103263A (en) | 2018-12-28 |
| CN109103263B CN109103263B (en) | 2022-03-15 |
Family
ID=64849181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810907928.6A Active CN109103263B (en) | 2018-08-10 | 2018-08-10 | Thin film transistor, manufacturing method thereof and manufacturing method of display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109103263B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022252327A1 (en) * | 2021-06-02 | 2022-12-08 | 深圳市华星光电半导体显示技术有限公司 | Array substrate manufacturing method, array substrate, and display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050074963A1 (en) * | 2003-10-02 | 2005-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of a semiconductor device |
| CN102832235A (en) * | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
| CN102859701A (en) * | 2010-04-20 | 2013-01-02 | 株式会社神户制钢所 | Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor |
-
2018
- 2018-08-10 CN CN201810907928.6A patent/CN109103263B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050074963A1 (en) * | 2003-10-02 | 2005-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of a semiconductor device |
| CN102859701A (en) * | 2010-04-20 | 2013-01-02 | 株式会社神户制钢所 | Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor |
| CN102832235A (en) * | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
Non-Patent Citations (1)
| Title |
|---|
| SHINJI MATSUMOTO, ET AL.: "Highly Reliable Oxide Thin Transistor with Novel Oxide Passivation Layers by All-Printing Processes", 《SID SYMPOSIUM DIGEST OF TECHNICAL PAPERS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022252327A1 (en) * | 2021-06-02 | 2022-12-08 | 深圳市华星光电半导体显示技术有限公司 | Array substrate manufacturing method, array substrate, and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109103263B (en) | 2022-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2369641B1 (en) | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | |
| US9564531B2 (en) | Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors | |
| TWI442570B (en) | Semiconductor thin film and its manufacturing method and thin film transistor | |
| Bukke et al. | Lanthanum doping in zinc oxide for highly reliable thin-film transistors on flexible substrates by spray pyrolysis | |
| KR101260957B1 (en) | A composition for oxide thin film, preparation method of the composition, methods for forming the oxide thin film using the composition, and an electrical device using the composition | |
| TW201248783A (en) | Wiring structure and sputtering target | |
| CN104701328B (en) | A kind of array base palte and its manufacture method, display device | |
| TW200903810A (en) | Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device | |
| CN102723279A (en) | Manufacturing method for metal oxide thin film transistor | |
| CN110416087A (en) | Metal oxide thin-film transistor and preparation method thereof with passivation enhancement layer | |
| CN110098261A (en) | A kind of thin film transistor and its manufacturing method, display base plate, panel, device | |
| CN109103263A (en) | Thin film transistor and its manufacturing method, the production method of display panel | |
| CN103928350A (en) | Method for preparing double-channel-layer thin film transistor | |
| US20130036943A1 (en) | Solution composition for forming oxide thin film and electronic device including the oxide thin film | |
| US20160013318A1 (en) | Semiconductor device and method for manufacturing the same | |
| JP6236778B2 (en) | Metal oxide film forming coating solution, metal oxide film, field effect transistor, and method of manufacturing field effect transistor | |
| CN110061064A (en) | A kind of thin film transistor and its manufacturing method, display base plate, panel, device | |
| KR101433857B1 (en) | Method for forming oxide thin film and method for fabricating oxide thin film transistor employing hydrogen peroxide | |
| CN109950322B (en) | Top gate type thin film transistor and manufacturing method thereof | |
| CN107527946A (en) | Oxide semiconductor thin-film, oxide thin film transistor and preparation method thereof | |
| CN109638082B (en) | Thin film transistor and preparation method thereof | |
| KR101465114B1 (en) | Method for forming oxide thin film and method for fabricating oxide thin film transistor implementing channel doping and passivation in one step | |
| EP2733723B1 (en) | Method for producing ferroelectric thin film | |
| CN109888023B (en) | Top gate type thin film transistor and manufacturing method thereof | |
| Lei et al. | The tunable dielectric properties of sputtered yttrium oxide films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |