CN109097833A - The preparation facilities of large size silicon-carbide monocrystalline plate - Google Patents
The preparation facilities of large size silicon-carbide monocrystalline plate Download PDFInfo
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- CN109097833A CN109097833A CN201811336079.XA CN201811336079A CN109097833A CN 109097833 A CN109097833 A CN 109097833A CN 201811336079 A CN201811336079 A CN 201811336079A CN 109097833 A CN109097833 A CN 109097833A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
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- Crystallography & Structural Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of preparation facilities of large size silicon-carbide monocrystalline plate, are related to semiconductor material preparation facilities technical field.Described device prepares large size silicon-carbide monocrystalline plate by cosolvent EFG technique, and devise a kind of SiC/Cr conductive die, melt is attracted in capillary square hole structure by SiC/Cr guided mode mold with interfacial tension, the solubility of carbon is further increased by the heating of capillary square hole structure, carborundum crystals are oriented growth in the melt in capillary square hole structure, SiC/Cr guided mode, which is constantly dissolved, simultaneously provides Si atom and C atom into melt, silicon carbide whisker body side surface has interface growth stability of the water cooling plant to improve carborundum crystals, go out part in growing silicon carbice crystals and elimination inclusion defect is migrated by temperature gradient, with at low cost, the carborundum crystals size of preparation is big, and quality it is high the advantages that.
Description
Technical field
The present invention relates to semiconductor material preparation facilities technical field more particularly to a kind of large size silicon-carbide monocrystalline plates
Preparation facilities.
Background technique
Silicon carbide is as third generation wide bandgap semiconductor materials, and due to its thermal conductivity height, electronics is saturated migration rate height, hits
The features such as electric field is high and forbidden bandwidth is big is worn, becomes high pressure, high frequency prepares one of preferred material of high power device, makes it extensively
Applied to the communications field, conventional semiconductor material device deficiency is compensated for, next generation network communication emphasis semiconductor material is become,
Therefore corresponding research program has successively been worked out in China, the U.S., Japan, Europe, to promote its development.In addition carborundum crystals are also
It is excellent optical material, is the mark for measuring a national optical system Development Level.The preparation method master of carborundum crystals
It to be physical vaporous deposition and flux method to prepare, wherein physical vaporous deposition is more mature, but manufacturing cost is high,
Low efficiency.Flux method is influenced not yet to form mature skill at present due to by growth size, defect and polycrystallization etc.
Art approach.
Summary of the invention
The technical problem to be solved by the present invention is to how provide a kind of single-crystal silicon carbide plate at low cost, growth size is big
Preparation facilities.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of large size silicon-carbide monocrystalline plate
Preparation facilities, it is characterised in that: including furnace body, the intracorporal downside of furnace is provided with crucible supporting, sets in the crucible supporting
It is equipped with crucible, primary heater is provided on the outside of the crucible supporting, SiC/Cr conductive die is provided in the crucible, it is described
It is provided with cooling device on the upside of SiC/Cr conductive die, single-crystal silicon carbide plate is provided on the upside of the cooling device, it is described
The upper end of single-crystal silicon carbide plate is provided with lifting rod, and the upper end of the lifting rod extends to outside the furnace body, the cooling device
Upside be provided with flux metal migration low-temperature heater and flux metal migration high temperature heater (HTH), the centre of the cooling device
And the lifting channel of the single-crystal silicon carbide plate is formed between the low-temperature heater and the high temperature heater (HTH), when initial,
Si-Cr-C melt in the crucible is introduced into the lower surface of the single-crystal silicon carbide plate by the SiC/Cr conductive die,
So that the following table face contact of the Si-Cr-C melt and the single-crystal silicon carbide plate.
A further technical solution lies in: the SiC/Cr conductive die includes the first SiC/Cr guide module and the 2nd SiC/
Cr guide module is provided with attachment screw mounting groove on the guide module, is provided with attachment screw in the attachment screw mounting groove,
First auxiliary heating electrode and the second auxiliary heating electrode are connect by the attachment screw with the guide module, and described first
The centre of SiC/Cr guide module and the 2nd SiC/Cr guide module has interval, the first SiC/Cr guide module and the 2nd SiC/Cr
The front side of guide module is connected by the first SiC/Cr guided mode fixture block, the first SiC/Cr guide module and the 2nd SiC/Cr guide module
Rear side connected by the 2nd SiC/Cr guided mode fixture block, is provided with auxiliary on the outside of auxiliary heating electrode and heats electrode drive
Device, the first SiC/Cr guide module and the 2nd SiC/Cr guided mode can be driven by heating electrod driving device by the auxiliary
Block moves between the guided mode fixture block and the guided mode fixture block, the first SiC/Cr guide module, the 2nd SiC/Cr guide module,
Capillary rhs-structure is enclosed between first SiC/Cr guided mode fixture block and the 2nd SiC/Cr guided mode fixture block, in the crucible
Si-Cr-C melt is introduced into the lower surface of the single-crystal silicon carbide plate by the capillary rhs-structure, so that the Si-Cr-C
The following table face contact of melt and the single-crystal silicon carbide plate.
A further technical solution lies in: the cooling device includes the coldplate of related connection, one of cooling
It is provided with circulation water injection pipe on plate, recirculation return pipe, the water injection pipe and the return pipe are provided on another coldplate
Outboard end extend to outside the furnace body.
A further technical solution lies in: it is respectively arranged on the outside of the low-temperature heater and the high temperature heater (HTH)
Clear up directive wheel support plate, be provided with cleaning directive wheel on the downside of the support plate, the distance between described cleaning directive wheel with
The thickness of the single-crystal silicon carbide plate is equal.
A further technical solution lies in: the material of the cleaning directive wheel is ceramics or boron nitride, and and silicon carbide
The diameter of the contact of monocrystalline plate, the cleaning directive wheel is greater than the thickness of coldplate in cooling device.
A further technical solution lies in: the first SiC/Cr guide module and the 2nd SiC/Cr guide module by SiC powder with
Cr powder is prepared by powder metallurgy, or is prepared by SiC powder and Cr founding；2nd SiC/Cr guided mode fixture block and
The making material of one SiC/Cr guided mode fixture block is boron nitride or silicon nitride.
The beneficial effects of adopting the technical scheme are that device of the present invention passes through cosolvent guided mode legal system
Standby size single-crystal silicon carbide plate, and a kind of SiC/Cr conductive die is devised, SiC/Cr guided mode mold is by melt with interfacial tension
It is attracted in capillary square hole structure, the solubility of carbon is further increased by the heating of capillary square hole structure, carborundum crystals are in hair
Growth is oriented in melt in thin square hole structure, while SiC/Cr guided mode constantly dissolves and provides Si atom and C into melt
Atom, silicon carbide whisker body side surface has interface growth stability of the water cooling plant to improve carborundum crystals, in carborundum crystals
It grows part and inclusion defect is eliminated by temperature gradient migration, at low cost, the carborundum crystals size of preparation is big, and matter
Measure the advantages that high.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural schematic diagram of described device of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of SiC/Cr guided mode mold in described device of the embodiment of the present invention；
Wherein: 1: furnace body；2: cleaning directive wheel support plate；3: flux metal migrates low-temperature heater；4: cleaning directive wheel；5: following
Ring water injection pipe；6: the first auxiliary heating electrodes；7: coldplate；8: primary heater；9:Si-Cr-C melt；10: crucible；11: crucible
Support；12: the one SiC/Cr guide modules；13: attachment screw；14: the second auxiliary heating electrodes；15: recirculation return pipe；16: drop
The flux metal fallen；17: flux metal migrates high temperature heater (HTH)；18: fluxing liquid metal；19: fluxing solid metallic；20: carbon
SiClx monocrystalline plate；21: the two SiC/Cr guided mode fixture blocks；22: the one SiC/Cr guided mode fixture blocks 23, the 2nd SiC/Cr guide module；24,
Capillary square hole structure.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Figure 1, the embodiment of the invention discloses a kind of preparation facilities of large size silicon-carbide monocrystalline plate, including furnace body
1, the downside in the furnace body 1 is provided with crucible supporting 11, and crucible 10, the crucible supporting are provided in the crucible supporting 11
11 outside is provided with primary heater 8, and SiC/Cr conductive die is provided in the crucible 10, the SiC/Cr conductive die
Upside is provided with cooling device, and single-crystal silicon carbide plate 20, the single-crystal silicon carbide plate 20 are provided on the upside of the cooling device
Upper end be provided with lifting rod, the upper end of the lifting rod extends to outside the furnace body 1, the setting of the outboard end of the lifting rod
There is lifting rod driving device, the lifting rod driving device is for driving the lifting rod to rise or fall.The cooling device
Upside be provided with flux metal migration low-temperature heater 3 and flux metal migration high temperature heater (HTH) 19, the cooling device
The lifting that the single-crystal silicon carbide plate 20 is formed between the intermediate and described low-temperature heater 3 and the high temperature heater (HTH) 19 is logical
Road, when initial, the Si-Cr-C melt 9 in the crucible 1 introduces the single-crystal silicon carbide by the SiC/Cr conductive die
The lower surface of plate 20, so that the following table face contact of the Si-Cr-C melt 9 and the single-crystal silicon carbide plate 20.
As depicted in figs. 1 and 2, the SiC/Cr conductive die includes that the first SiC/Cr guide module 12 and the 2nd SiC/Cr are led
Module 23 is provided with attachment screw mounting groove on the guide module, is provided with attachment screw 13 in the attachment screw mounting groove,
First auxiliary heating electrode 6 and the second auxiliary heating electrode 14 are connect by the attachment screw 13 with the guide module.It is described
The centre of first SiC/Cr guide module 12 and the 2nd SiC/Cr guide module 23 has an interval, the first SiC/Cr guide module 12 with
The front side of 2nd SiC/Cr guide module 23 is connected by the first SiC/Cr guided mode fixture block 22, the first SiC/Cr guide module 12 with
The rear side of 2nd SiC/Cr guide module 23 is connected by the 2nd SiC/Cr guided mode fixture block 21.It is set on the outside of the auxiliary heating electrode
It is equipped with auxiliary heating electrod driving device, heating electrod driving device by the auxiliary can drive the first SiC/Cr to lead
Module 12 and the 2nd SiC/Cr guide module 23 move between the guided mode fixture block and the guided mode fixture block.First SiC/Cr
Between guide module 12, the 2nd SiC/Cr guide module 23, the first SiC/Cr guided mode fixture block 22 and the 2nd SiC/Cr guided mode fixture block 21
Capillary rhs-structure 24 is enclosed, the Si-Cr-C melt 9 in the crucible 1 is introduced into described by the capillary rhs-structure
The lower surface of single-crystal silicon carbide plate 20, so that the following table face contact of the Si-Cr-C melt 9 and the single-crystal silicon carbide plate 20.
Explanation is needed further exist for, in order to make the first SiC/Cr guided mode fixture block 22 and the 2nd SiC/Cr guided mode fixture block 21 and institute
Guide module contact is stated, also needs to be arranged guided mode fixture block support (not shown) in the furnace body, is used to support the guided mode folder
Block, in addition, also needing to be arranged guided mode fixture block support driving device outside the furnace body, for driving the guided mode fixture block as needed
Movement.Guide module is prepared with SiC/Cr, electrode is heated by the auxiliary and is generated heat together with attachment screw 13, promotes SiC molten
Solution, provides the growth interface of Si atom and C atom to single-crystal silicon carbide plate 20.
Further, as shown in Figure 1, the cooling device includes the coldplate 7 of related connection, one of coldplate
It is provided with circulation water injection pipe 5 on 7, is provided with recirculation return pipe 15, the water injection pipe and the return water on another coldplate 7
The outboard end of pipe extends to outside the furnace body 1, passes through formation temperature ladder between the cooling device and the auxiliary heater
Degree, to improve the growth stability of single-crystal silicon carbide plate 20.
Further, cleaning directive wheel branch is respectively arranged on the outside of the low-temperature heater and the high temperature heater (HTH)
Fagging 2 is provided with cleaning directive wheel 4, the distance between described cleaning directive wheel 4 and the silicon carbide on the downside of the support plate
The thickness of monocrystalline plate 20 is equal.The material of the cleaning directive wheel 4 is ceramics or boron nitride, and is connect with single-crystal silicon carbide plate 20
The diameter of touching, the cleaning directive wheel 4 is greater than the thickness of coldplate 7 in cooling device.Melt state is prevented by cleaning directive wheel 4
Metal 18 drops on coldplate 16 or SiC/Cr conductive die, and interference single-crystal silicon carbide plate 20 is contacted with Si-Cr-C melt 9
The stability in face.Cleaning directive wheel support plate 2 plays simultaneously migrates low-temperature heater 3 and flux metal migration height to flux metal
The effect that warm heater 17 is kept the temperature.
The first SiC/Cr guide module 12 and the 2nd SiC/Cr guide module 23 can pass through powder smelting by SiC powder and Cr powder
Prepared by gold, or prepared by SiC powder and Cr founding, so that the two is conductive and it is enough strong to obtain
Degree；2nd SiC/Cr guided mode fixture block 21 and the first SiC/Cr guided mode fixture block 22 using the ceramic materials such as boron nitride or silicon nitride into
Row preparation, becomes the insulating materials with high temperature resistant material.
The embodiment of the invention also discloses a kind of preparation method of large size silicon-carbide monocrystalline plate, described in the method use
Preparation facilities includes the following steps:
Si-Cr-C is placed into crucible 1 in proportion, by coldplate recycle water injection pipe 5 and coldplate recirculation return pipe 15 to
It is passed through recirculated water in coldplate 7, low-temperature heater 3 is migrated to flux metal and flux metal migration high temperature heater (HTH) 17 is powered and adds
Heat；Si-Cr-C melt 9 is thermally formed to Si material, Cr material and the C powder in crucible by primary heater 8, heating temperature is
2000K-2100K；
Heating electrode 6 and the second auxiliary heating electrode 14 is assisted to add to the Si-Cr-C melt 9 in capillary rhs-structure by first
Heat, melt by the capillary action transport of capillary rhs-structure 24 to the lower surface of single-crystal silicon carbide plate 20, by furnace body outside
Lifting rod lifts driving device, and by single-crystal silicon carbide plate 20, slowly lifting, when lifting, need to guarantee under single-crystal silicon carbide plate 20 upwards
Surface is in contact with the Si-Cr-C melt 9 always；
As single-crystal silicon carbide plate 20 is grown up, when single-crystal silicon carbide plate 20 moves to flux metal migration low-temperature heater 3
Flux metal migration high temperature heater (HTH) 17 between after, be mixed in the flux metal Cr inside single-crystal silicon carbide plate 20 will migrate to
Flux metal migrates 17 side of high temperature heater (HTH), and is precipitated, forms fluxing liquid metal 18 and flows down from single-crystal silicon carbide plate 20,
It prevents molten liquid metal 18 from dropping on coldplate 16 or SiC/Cr conductive die by cleaning directive wheel 4, interferes silicon carbide
The stability of monocrystalline plate 20 and 9 contact surface of Si-Cr-C melt；The hydrotropy metal 16 to drip will be by cleaning directive wheel 4 and cleaning
Gap between 2 lower end of directive wheel support plate enters in Si-Cr-C melt 9；
With the growth of single-crystal silicon carbide plate 20, the auxiliary of SiC/Cr guide module 12, the first heating electrode 6 and the second auxiliary add
Thermode 14 can gradually dissolve and capillary rhs-structure 24 is become large-sized；It is auxiliary according to the first auxiliary heating electrode 6 and second
The resistance value between heating electrode 14 is helped, is heated by program control system control the first auxiliary heating electrode 6 and the second auxiliary
The distance between electrode 14 ensures 24 size constancy of capillary rhs-structure；
With the consumption of the SiC/Cr guide module 12, single-crystal silicon carbide plate 20 will constantly be grown, and be led when with the SiC/Cr
The distance between first auxiliary heating electrode 6 and the second auxiliary heating electrode 14 are become larger, are made after by the consumption of module 12
It obtains capillary rhs-structure 24 to become large-sized, the Si-Cr-C melt 9 in the capillary rhs-structure is back in crucible 10；It proposes
The first auxiliary heating auxiliary of electrode 6, second heating electrode 14 and the SiC/Cr guide module 12, stop primary heater 8 and heat,
Flux metal migrates low-temperature heater 3 and flux metal migration high temperature heater (HTH) 17 stops heating；Replacement the first auxiliary heating
Device electrode 6, the second auxiliary heater electrode 14 and the SiC/Cr guide module 12 are allowed to be formed with the guided mode fixture block new
SiC/Cr conductive die, then repeats the above steps, and continues to grow, and completes the growth of large size silicon-carbide monocrystalline plate.
Further, Si-Cr-C is placed into crucible 10 in proportion, wherein Si:Cr=1-X:X, Y is that C accounts for Si's and Cr
Atomic ratio, as X=0.2, Y=0.002-0.003；As X=0.3, Y=0.008-0.012；As X=0.4, Y=0.03-0.04；
As X=0.5, Y=0.07-0.08；As X=0.6, Y=0.16-0.17.Oversaturated carbon will swim in Si-Cr-C melt 9
Surface cannot influence the growth of single-crystal silicon carbide plate 20, therefore the content of carbon atom should not mistake by capillary rhs-structure 24
It is high.
Device and method of the present invention prepare large size silicon-carbide monocrystalline plate by cosolvent EFG technique, and devise one
Melt is attracted in capillary square hole structure by kind SiC/Cr conductive die, SiC/Cr guided mode mold with interfacial tension, passes through capillary
Square hole structure heats the solubility for further increasing carbon, and carborundum crystals are oriented life in the melt in capillary square hole structure
It is long, while SiC/Cr guided mode constantly dissolves and provides Si atom and C atom, silicon carbide whisker body side surface into melt and have water cooling plant use
To improve the interface growth stability of carborundum crystals, goes out part in growing silicon carbice crystals and elimination folder is migrated by temperature gradient
Miscellaneous defect has the advantages that at low cost, the carborundum crystals size of preparation is big, and quality is high.
Claims (6)
1. a kind of preparation facilities of large size silicon-carbide monocrystalline plate, it is characterised in that: including furnace body (1), in the furnace body (1)
Downside is provided with crucible supporting (11), is provided with crucible (10) in the crucible supporting (11), outside the crucible supporting (11)
Side is provided with primary heater (8), is provided with SiC/Cr conductive die in the crucible (10), the SiC/Cr conductive die it is upper
Side is provided with cooling device, is provided on the upside of the cooling device single-crystal silicon carbide plate (20), the single-crystal silicon carbide plate
(20) upper end is provided with lifting rod, and the upper end of the lifting rod extends to the furnace body (1) outside, the upside of the cooling device
It is provided with flux metal migration low-temperature heater (3) and flux metal migrates high temperature heater (HTH) (19), in the cooling device
Between and the low-temperature heater (3) and the high temperature heater (HTH) (19) between form the lifting of the single-crystal silicon carbide plate (20)
Channel, when initial, the Si-Cr-C melt (9) in the crucible (1) introduces the carbonization by the SiC/Cr conductive die
The lower surface of silicon single crystal plate (20), so that the Si-Cr-C melt (9) and the lower surface of the single-crystal silicon carbide plate (20) connect
Touching.
2. the preparation facilities of large size silicon-carbide monocrystalline plate as described in claim 1, it is characterised in that: the SiC/Cr is conductive
Mold includes the first SiC/Cr guide module (12) and the 2nd SiC/Cr guide module (23), is provided with attachment screw on the guide module
Mounting groove is provided with attachment screw (13) in the attachment screw mounting groove, and the first auxiliary heating electrode (6) and the second auxiliary add
Thermode (14) is connect by the attachment screw (13) with the guide module, the first SiC/Cr guide module (12) and second
The centre of SiC/Cr guide module (23) has interval, the first SiC/Cr guide module (12) and the 2nd SiC/Cr guide module (23)
Front side pass through the first SiC/Cr guided mode fixture block (22) and connect, the first SiC/Cr guide module (12) and the 2nd SiC/Cr guided mode
The rear side of block (23) is connected by the 2nd SiC/Cr guided mode fixture block (21), is provided with auxiliary on the outside of the auxiliary heating electrode and is added
Thermoelectricity electrode driving device, by the auxiliary heat electrod driving device can drive the first SiC/Cr guide module (12) and
2nd SiC/Cr guide module (23) moves between the guided mode fixture block and the guided mode fixture block, the first SiC/Cr guide module
(12), the 2nd SiC/Cr guide module (23), the first SiC/Cr guided mode fixture block (22) and the 2nd SiC/Cr guided mode fixture block (21) it
Between enclose capillary rhs-structure (24), the Si-Cr-C melt (9) in the crucible (1) is drawn by the capillary rhs-structure
Enter to the lower surface of the single-crystal silicon carbide plate (20), so that the Si-Cr-C melt (9) and the single-crystal silicon carbide plate (20)
Following table face contact.
3. the preparation facilities of large size silicon-carbide monocrystalline plate as described in claim 1, it is characterised in that: the cooling device packet
The coldplate (7) of related connection is included, is provided with circulation water injection pipe (5), another coldplate on one of coldplate (7)
(7) it is provided on recirculation return pipe (15), the outboard end of the water injection pipe and the return pipe extends to the furnace body (1)
Outside.
4. the preparation facilities of large size silicon-carbide monocrystalline plate as described in claim 1, it is characterised in that: the low-temperature heater
And cleaning directive wheel support plate (2) is respectively arranged on the outside of the high temperature heater (HTH), it is provided on the downside of the support plate
It clears up directive wheel (4), the distance between described cleaning directive wheel (4) is equal with the thickness of the single-crystal silicon carbide plate (20).
5. the preparation facilities of large size silicon-carbide monocrystalline plate as claimed in claim 4, it is characterised in that: the cleaning directive wheel
(4) material is ceramics or boron nitride, and is contacted with single-crystal silicon carbide plate (20), and the diameter of cleaning directive wheel (4) is big
The thickness of coldplate (7) in cooling device.
6. the preparation facilities of large size silicon-carbide monocrystalline plate as claimed in claim 2, it is characterised in that: the first SiC/Cr
Guide module (12) is prepared with Cr powder by powder metallurgy with the 2nd SiC/Cr guide module (23) by SiC powder, or passes through SiC
Powder is prepared with Cr founding；The making material of 2nd SiC/Cr guided mode fixture block (21) and the first SiC/Cr guided mode fixture block (22) is
Boron nitride or silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811336079.XA CN109097833A (en) | 2018-11-12 | 2018-11-12 | The preparation facilities of large size silicon-carbide monocrystalline plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811336079.XA CN109097833A (en) | 2018-11-12 | 2018-11-12 | The preparation facilities of large size silicon-carbide monocrystalline plate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| CN1474466A (en) * | 2002-05-31 | 2004-02-11 | ������������ʽ���� | Laminous element and its producing method |
| CN104695019A (en) * | 2013-12-06 | 2015-06-10 | 信越化学工业株式会社 | Method for growing silicon carbide crystal |
-
2018
- 2018-11-12 CN CN201811336079.XA patent/CN109097833A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| CN1474466A (en) * | 2002-05-31 | 2004-02-11 | ������������ʽ���� | Laminous element and its producing method |
| CN104695019A (en) * | 2013-12-06 | 2015-06-10 | 信越化学工业株式会社 | Method for growing silicon carbide crystal |
Non-Patent Citations (3)
| Title |
|---|
| N.L.帕尔 著，朱华昌等译: "《区域提纯及有关技术》", 31 July 1963 * |
| 范志刚等: "蓝宝石单晶的生长技术及应用研究进展", 《硅酸盐学报》 * |
| 许多: "毛细效应下熔融硅的润湿性研究", 《万方数据库》 * |
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