CN109097725B - Metal uranium surface siliconizing modified layer and preparation method and preparation device thereof - Google Patents
Metal uranium surface siliconizing modified layer and preparation method and preparation device thereof Download PDFInfo
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
The invention discloses a siliconizing modified layer on the surface of metal uranium, a preparation method and a preparation device thereof, wherein the siliconizing modified layer is arranged on the surface of the metal uranium; the siliconizing modified layer is a ceramic uranium silicon oxygen passivation film; the thickness of the siliconizing modified layer is not less than 200 nm; the invention also discloses a preparation method and a preparation device of the uranium metal surface siliconizing modified layer, wherein in a vacuum chamber with the vacuum degree not more than 30Pa, argon and gas containing silicon elements are used as reaction gases, and a pulsed laser scanning system is adopted to scan the surface of a workpiece with the temperature of 160-170 ℃. The uranium silicon-oxygen siliconized modified layer which is low in impurity content, high in chemical stability and tightly combined with the matrix is formed on the surface of the uranium metal, has good corrosion resistance, and provides a brand new way for solving the problem of corrosion resistance of the uranium metal surface. In addition, the invention has no special requirements on the shape of the workpiece, is suitable for both plane workpieces and special-shaped workpieces, and has stronger adaptability.
Description
Technical Field
The invention relates to the technical field of preparation of metal surface passivation films, in particular to a uranium metal surface siliconizing modified layer and a preparation method and a preparation device thereof.
Background
As an important nuclear material, metallic uranium has a wide range of uses in nuclear engineering. The valence electron structure of uranium is special (5 f)36d17s2) And the standard electrode potential is extremely low (-1.5V), so that the metal uranium is active in chemical property and is easy to corrode under the action of an environmental medium, and the physical and chemical properties, namely the nuclear property, of the metal uranium are further influenced. For a long time, the research on the surface corrosion behavior and the protection technology of metallic uranium is of great interest, and a passivation layer is generally required to be prepared on the surface of the uranium so as to effectively prevent the uranium from being corroded in the environment.
The conventional uranium surface passivation method is to nitridate the metal surface through a long-time nitriding treatment under a high-temperature and high-pressure condition, and to form a passivation film on the metal surface through ion implantation nitriding, plasma nitriding and the like. In the research on the omnibearing ion implantation and nitridation treatment of uranium surface, published in the journal of the institute of materials thermal treatment (2008, 10 th month, 29 th volume, 5 th period, 139 + 142), researchers at the institute of Chinese engineering and physics, and the like introduce that nitrogen ions with energy of 40-60 keV are implanted into the surface of metal uranium by using an ion implanter to form a nitrogen-doped passivation layer with a certain thickness, wherein the nitrogen-doped passivation layer has a certain corrosion resistance.
The core idea of the anti-corrosion treatment of the metal uranium nitriding is that a new element is introduced to the surface of the metal uranium to change the surface oxidation process of the metal uranium and delay the development speed of oxidation corrosion to a matrix, but the nitrogen element is in a metastable state in the oxidation process. The long oxidation or severe oxidation in a high temperature environment may cause the nitrogen elements in the metal nitride to eventually escape the surface. In contrast, silicon is a non-metallic element with greater stability during oxidation, which can be converted to silicon dioxide during oxidation and can be further combined with a metal oxideThe reaction forms silicates. Whether metal silicide, silicon dioxide or silicate can exist stably on the surface of the material, and a continuous protection effect on the surface of the material is formed. Mcwhirter J W and Draley J E, American national laboratory of atton, 1952, reported that Uranium silicon compounds exhibit superior water Corrosion resistance at high temperatures over depleted Uranium. The uranium silicide has good stability. Kweon HoKang et al (Kang K H, Kim K S, Kim KJ, et al, oxidation behavor of U, the institute of atomic energy in Korea in 19963Si (3.9 wt% Si) in air at 250 ℃. 400 ℃ Journal of nuclear Materials,1996,228(2): 220-. On the other hand, siliconizing is an effective technology for improving the corrosion resistance and the wear resistance of the metal surface, and compared with solid-phase siliconizing, the gas-phase siliconizing by adopting silane as a siliconizing agent has the advantages of relatively low reaction temperature, strong geometric adaptability of a treated object and good surface corrosion resistance after modification.
Laser light is a light wave having high directivity, monochromaticity, coherence, high brightness and harmony, and laser surface treatment was first proposed in 1983 and was widely studied. Compared with the conventional passivation process, the laser surface passivation has the advantages of high heating speed, small workpiece deformation, no environmental pollution and the like, and the surface treated by the laser passivation has the advantages of high wear resistance, corrosion resistance, hardness, fatigue strength and the like. Yongbin, etc. (Yongbin Zhang, Daqiao Meng, Qinying Xu, et al. pulsed laser nitriding of uranium, Journal of Nuclear Materials,2010, (397):31-35) a vacuum chamber is filled with nitrogen with a certain pressure, the surface of a sample is scanned by nanosecond pulsed laser, and a uranium nitride film with the thickness of about 1 μm is formed on the surface of a uranium material, so that the uranium nitride film has better corrosion resistance. According to the 105063547A patent disclosed by Chenxi Lei et al, the surface of a workpiece is scanned by nanosecond pulse laser under the atmospheric environment, so that a ceramic-state uranium nitrogen oxygen passivation film is prepared on the surface of the workpiece, the passivation film has excellent corrosion resistance, the surface of the workpiece does not need pretreatment, the waste generation amount is small, and the method is environment-friendly.
At present, the laser passivation treatment on the surface of the metal uranium is mainly a nitrogen doping passivation modification technology, mainly ion implantation nitridation, plasma nitridation and laser nitridation, and other technologies for forming a passivation layer on the surface of the metal uranium do not exist.
Disclosure of Invention
Aiming at the prior art, the invention provides a metallic uranium surface siliconizing modified layer with good corrosion resistance.
Aiming at the prior art, the invention also provides a preparation method of the uranium metal surface siliconizing modified layer.
Aiming at the prior art, the invention also provides a preparation device of the siliconized modified layer on the surface of the uranium metal.
The invention is realized by the following technical scheme: a siliconizing modified layer on the surface of metal uranium is a siliconizing modified layer formed on the surface of metal uranium; the siliconizing modified layer is a ceramic uranium silicon oxygen passivation film; the thickness of the siliconizing modified layer is not less than 200 nm.
The preparation method of the uranium metal surface siliconizing modified layer specifically comprises the following steps:
s1: in a vacuum chamber with the vacuum degree not more than 30Pa, argon and gas containing silicon elements are used as reaction gases, a pulsed laser scanning system is adopted to carry out surface scanning on a workpiece with the temperature of 160-170 ℃, and the scanning laser energy density of the pulsed laser scanning system is 1000-7000 mJ/cm2The laser overlapping degree is 40% -60%;
s2: and after the scanning is finished, closing the pulse laser scanning system and removing the workpiece.
In the step 1, the gas containing the silicon element is silane and a silane derivative which are gaseous at normal temperature; the laser acts on the surface of a workpiece to rapidly heat the surface of the workpiece, metal on the surface of the workpiece is melted and gasified to generate plasma, the plasma acts with ambient gas to recoil to act on the surface of the workpiece, silicon element in the gas enters the metal on the surface of the workpiece, the molten layer is rapidly cooled and solidified, and a ceramic-state siliconizing modified layer containing uranium and silicon oxygen element is formed on the surface of the workpiece, wherein the oxygen element is from trace oxygen residue in the air.
Preferably, the energy density of the scanning laser is 2000-5000 mJ/cm2Laser overlap is 50%; in step S1, the temperature of the workpiece is 165 ℃.
Further, in the step S1, the mass ratio of the argon gas and the gas containing a silicon element introduced into the vacuum chamber is 9: 1.
Further, in the step S1, the vacuum degree in the vacuum chamber is not more than 30 Pa; the partial pressure of the gas containing the silicon element is 0.005-0.02 mbar.
Preferably, the vacuum degree in the vacuum chamber is 20 Pa; the partial pressure of the gas containing silicon is 0.01 mbar.
Furthermore, the scanning distance of the scanning laser of the pulse laser scanning system is 0.5 mm-1.2 mm, and the scanning speed is 0.5-1.5 mm/s.
Preferably, the scanning distance of the scanning laser of the pulse laser scanning system is 0.8 mm-1 mm, and the scanning speed is 0.6-0.8 mm/s.
Further, step S1 is preceded by step S0, and step S0 is a workpiece preprocessing step including: heating the workpiece in a vacuum chamber with the vacuum degree not more than 20Pa until the temperature of the workpiece reaches 160-170 ℃, keeping the temperature constant, and starting a pulse laser scanning system to perform nanosecond pulse laser sputtering cleaning on the surface of the workpiece, wherein the energy density of the nanosecond pulse laser is 2000mJ/cm2The laser overlap rate is 50% and then the laser scanning system is turned off.
The workpiece is kept at a constant temperature in step S1.
Preferably, the preparation method of the uranium metal surface siliconizing modified layer specifically comprises the following steps:
s0: putting the workpiece into vacuum degree, heating the workpiece in a vacuum chamber with the pressure not more than 20Pa until the temperature of the workpiece reaches 165 ℃, keeping the temperature constant, and starting a pulse laser scanning system to perform nanosecond pulse laser sputtering cleaning on the surface of the workpiece, wherein the energy density of the nanosecond pulse laser is 2000mJ/cm2The laser overlap rate is 50% and then the laser scanning system is turned off.
S1: into the vacuum chamber according to the following ratio of 9:1 by mass ratio of argonGas and gas containing silicon element till the partial pressure of the gas containing silicon element is 0.01mPa, the vacuum degree in the vacuum chamber is kept at 20Pa, a pulsed laser scanning system is adopted to scan the surface of a workpiece with the temperature of 165 ℃, and the energy density of scanning laser of the pulsed laser scanning system is 5000mJ/cm2The laser overlapping degree is 50%, the scanning interval is 0.8mm, and the scanning speed is 0.8 mm/s;
s2: and after the scanning is finished, closing the pulse laser scanning system and removing the workpiece.
The preparation device of the uranium metal surface siliconizing modified layer comprises a pulse laser scanning system, a workpiece heating device, a vacuum chamber, a workbench, a temperature detection device and two air inlets; the workbench, the detection end of the temperature detection device and the two air inlets are arranged in a vacuum chamber, the vacuum chamber is externally connected with a vacuum pump, and the two air inlets are respectively externally connected with a gas carrier source containing silicon and an argon carrier source; and a light-transmitting glass window is arranged at the top of the vacuum chamber, and the laser emitted by the pulse laser scanning system scans the surface of the workpiece through the light-transmitting glass window.
Preferably, the vacuum chamber is a quartz vacuum chamber.
And uranium mass flow meters are arranged on gas pipelines between the two gas inlets and the gas carrier source containing silicon elements and the gas pipeline between the two gas inlets and the gas carrier source containing argon.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the uranium silicon-oxygen siliconized modified layer which is low in impurity content, high in chemical stability and tightly combined with the matrix is formed on the surface of the uranium metal, has good corrosion resistance, and provides a brand new way for solving the problem of corrosion resistance of the uranium metal surface. In addition, the invention has no special requirements on the shape of the workpiece, is suitable for both plane workpieces and special-shaped workpieces, and has stronger adaptability.
Drawings
FIG. 1 is a schematic structural view of a manufacturing apparatus used in the present invention;
FIG. 2 is a schematic view showing comparison of atmospheric corrosion of a siliconized product of the present invention with a non-siliconized product;
FIG. 3 is a SEM illustration of a siliconized product H1 of the present invention;
FIG. 4 is a SEM illustration of a siliconized product H2 of the present invention;
FIG. 5 is a SEM illustration of a siliconized product H2 of the present invention;
FIG. 6 is an XPS analysis of a siliconized product H3 according to the invention.
The labels in the figure are: the device comprises a vacuum pump 1, a vacuum chamber 2, a workpiece heating device 3, a laser scanning system 4, a light-transmitting glass window 5, a workpiece 6, a sample table 7, a temperature detection device 8, a silicon-containing gas carrier source 9, a valve 10, a mass flowmeter 11 and an argon gas carrier source 12.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
The device for preparing the uranium metal surface siliconizing modified layer adopted in the embodiment of the invention is shown in figure 1 and comprises a vacuum chamber 2, a metal sample table 7 arranged in the vacuum chamber 2 and used for placing a workpiece 6, a laser scanning system 4, a vacuum pump 1 connected with the vacuum chamber 2, a temperature detection device 8, a gas carrier source 9 containing silicon elements and an argon carrier source 12, wherein the vacuum chamber 2 is provided with a light-transmitting glass window 5, and the laser scanning system 4 is matched with the light-transmitting glass window 5; the workpiece heating device 3 selects an induction heating coil in the embodiment of the invention, and the induction heating coil can heat the workpiece 6 and keep the workpiece 6 at a constant temperature; the temperature detection device 8 may be a thermocouple capable of measuring the temperature of the workpiece 6; the workpiece 6 is placed on the sample stage 7 and is at the focus of the transparent glass window 5, and the transparent glass window 5 can enable laser to completely penetrate through. The laser scanning system 4 outputs nanosecond pulse laser and translates the nanosecond pulse laser, so that the position of the laser acting on the surface of the workpiece 6 is controlled, and the laser scans the workpiece 6. The vacuum chamber 2 can be made of ultraviolet fused quartz. The vacuum chamber 2 is preferably a quartz vacuum chamber.
The principle of adopting pulse laser scanning is that in a mixed gas environment of argon and gas containing silicon elements, a laser beam with higher energy density acts on the metal surface of a workpiece 6 to generate a large amount of heat instantly, so that the metal surface of the workpiece 6 is rapidly heated, melted and gasified to generate plasma, the plasma acts on an ambient gas to recoil to act on a molten layer on the metal surface of the workpiece 6, the silicon elements in the gas enter the metal surface of the workpiece 6, the metal surface is rapidly cooled and solidified, and a ceramic uranium silicon oxygen passivation film is formed on the surface, namely a silicon infiltration modified layer.
Example 1
A preparation method of a silicon-infiltrated modified layer on the surface of uranium metal comprises the following steps:
s0: opening the vacuum chamber 2, placing the workpiece 6 on the sample table 7, closing the quartz vacuum chamber 2, and starting the vacuum pump 1 to vacuumize the quartz vacuum chamber 2 until the vacuum degree reaches about 20 Pa. The workpiece 6 is heated. And starting the induction heating coil to heat the workpiece 6 until the temperature displayed by the thermocouple reaches 160 ℃, and keeping the constant temperature. Starting the pulse laser scanning system 4, and carrying out nanosecond pulse laser sputtering cleaning on the surface of the workpiece 6, wherein the energy density of the nanosecond pulse laser is 2000mJ/cm2The overlap rate was 50% and then the laser scanning system was turned off.
S1: opening a valve 10 to enable silane and argon to enter the quartz vacuum chamber 2 through a mass flow meter 11, and adjusting the flow rate of the argon to enable the mass ratio of the introduced silane to the introduced argon to be 9:1, the silane partial pressure in the vacuum chamber 2 is 0.005mbar, simultaneously a laser scanning system is started, KrF excimer laser with the wavelength of 248 nanometers is used for scanning the surface of the workpiece 6, and the pulse energy density is 5000mJ/cm2The scanning pitch was 0.6mm, the scanning rate was 1.5mm/s, and the laser overlap was 50%.
S2: and after laser scanning, closing the laser scanning system, closing the valve 10, closing the induction heating coil, closing the vacuum pump 1, opening the vacuum chamber 2 after the workpiece 6 is cooled, and taking out the workpiece 6, so that a siliconizing modified layer can be obtained on the surface of the workpiece 6, and a sample H1 is obtained.
Example 2
A preparation method of a silicon-infiltrated modified layer on the surface of uranium metal comprises the following steps:
s0: the vacuum chamber 2 is opened to place the workpiece 6 on the sample stage 7And closing the quartz vacuum chamber 2, and starting the vacuum pump 1 to vacuumize the quartz vacuum chamber 2 until the vacuum degree reaches about 20 Pa. And starting the induction heating coil to heat the workpiece 6 until the temperature displayed by the thermocouple reaches 165 ℃, and keeping the constant temperature. Starting a laser scanning system, and carrying out nanosecond pulse laser sputtering cleaning on the surface of the workpiece 6, wherein the energy density of the nanosecond pulse laser is 2000mJ/cm2The overlap rate was 50% and then the laser scanning system was turned off.
S1: opening a valve 10 to enable silane and argon to enter the quartz vacuum chamber 2 through a mass flow meter 11, and adjusting the flow rate of the argon to enable the mass ratio of the introduced silane to the introduced argon to be 9:1, the silane partial pressure in the vacuum chamber 2 is 0.01mbar, simultaneously a laser scanning system is started, KrF excimer laser with the wavelength of 248 nanometers is used for scanning the surface of the workpiece 6, and the pulse energy density is 2000mJ/cm2The scanning pitch was 0.5mm, the scanning rate was.2 mm/s, and the laser overlap was 60%.
S2: and after laser scanning, closing the laser scanning system, closing the valve 10, closing the induction heating coil, closing the vacuum pump 1, opening the vacuum chamber 2 after the workpiece 6 is cooled, and taking out the workpiece 6, so that a siliconizing modified layer can be obtained on the surface of the workpiece 6, and a sample H2 is obtained.
Example 3
A preparation method of a silicon-infiltrated modified layer on the surface of uranium metal comprises the following steps:
s0: opening the vacuum chamber 2, placing the workpiece 6 on the sample table 7, closing the quartz vacuum chamber 2, and starting the vacuum pump 1 to vacuumize the quartz vacuum chamber 2 until the vacuum degree reaches about 20 Pa. And starting the induction heating coil to heat the workpiece 6 until the temperature displayed by the thermocouple reaches 170 ℃, and keeping the constant temperature. Starting a laser scanning system, and carrying out nanosecond pulse laser sputtering cleaning on the surface of the workpiece 6, wherein the energy density of the nanosecond pulse laser is 2000mJ/cm2The overlap rate was 50% and then the laser scanning system was turned off.
S1: opening a valve 10 to enable silane and argon to enter the quartz vacuum chamber 2 through a mass flow meter 11, and adjusting the flow rate of the argon to enable the mass ratio of the introduced silane to the introduced argon to be 9:1, the partial pressure of silane in the vacuum chamber 2 is 0.05mbar, and simultaneously the laser scanning system is started so as toKrF excimer laser with wavelength of 248 nm scans the surface of the workpiece 6, and the pulse energy density is 7000mJ/cm2The scanning distance is 1.2mm, the scanning speed is 0.5mm/s, and the laser overlapping degree is 40 percent; .
S2: and (3) closing the laser scanning system, closing the valve 10, closing the induction heating coil, closing the vacuum pump 1, opening the vacuum chamber 2 after the workpiece 6 is cooled, and taking out the workpiece 6, so that a siliconizing modified layer can be obtained on the surface of the workpiece 6, and a sample H3 is obtained.
The test results of the samples obtained in the examples:
as shown in fig. 2, the laser-treated surfaces of the samples H1, H2, and H3 were compared with the untreated surface of the sample, and left in the same atmosphere for more than 15 days, wherein the untreated surface of the sample had been oxidized to black, and the black uranium oxide powder was dropped, and the laser-treated surface remained bright.
By scanning electron microscope SEM, the surface appearances of the samples H1 in example 1, H2 in example 2 and H3 in example 3 after siliconizing are observed, and the results are shown in figures 3-5, wherein the left and right are respectively magnified by 100 times and 2000 times, the surface modification layer after surface laser siliconizing is compact in structure and tightly combined with a metal matrix, and the passivation modification layer basically does not contain defects.
The H3 product from the workpiece 6 obtained in example 3 was analyzed by XPS, which is mainly an ESCA L AB 250X-ray spectrometer with a main analysis chamber (SAC) background vacuum superior to 1.5 × 10-6Pa, the instrument uses Mg K α (1253.6eV) rays as an excitation source, the emission voltage is 15keV, the beam spot is 500 μm, the power is 300W, the resolution is 0.6 eV., the information distribution in the depth direction of the surface layer of the sample is obtained by argon ion beam in-situ sputtering, and the analysis result is shown in FIG. 6.
The 2s spectrum of Si has a binding energy peak at the 154eV position, and it is hypothesized that the surface may be the oxide SiO of silicon2Or is SiVI. U4 f spectrum, the initial surface has a binding energy peak at the position of 380.2eV, indicating that there is oxide formation on the surface. When the sputtering is carried out for 60s, the oxide binding energy peak shifts to a high binding energy end, and a new binding energy peak appears at the position of 380.9eV, thereby indicating that the state of U is generatedChanges are made. As the degree of sputtering increases, the intensity of the binding energy peak at 380.9eV decreases, and a new binding energy peak at 377.1eV appears, which is the signal of metal U. The 1s spectrum of O has a strong binding energy peak at the position of 532.9eV initially, and is SiO2Characteristic peak of (a); there is a weaker binding energy peak at 530.3eV, which is the oxide peak of U. When the alloy is sputtered for 60s, a weaker binding energy peak at 530.3eV disappears, a new binding energy peak appears at 531.2eV, and the state of O on the surface is between the state of O in SiO2 and the state of O in uranium oxide, so that a U-Si-O ternary compound is formed. SiO at the 532.9eV position as the degree of sputtering deepens2Decreases until disappearance, while the peak intensity of the binding energy at 531.2eV increases first and then decreases.
In conclusion, the surfaces of the samples are mainly uranium oxide and silicon oxide, the bottom of the samples is metal uranium, and the middle transition layer is U-Si-O.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (10)
1. The utility model provides a modified layer of uranium metal surface siliconizing which characterized in that: a siliconizing modified layer on the surface of the metal uranium; the siliconizing modified layer is a ceramic uranium silicon oxygen passive film; the thickness of the siliconizing modified layer is not less than 200 nm.
2. The method for preparing the uranium metal surface siliconized modified layer as claimed in claim 1, which is characterized by comprising the following steps: s1: in a vacuum chamber (2) with the vacuum degree not more than 30Pa, argon and gas containing silicon elements are used as reaction gas, a pulsed laser scanning system (4) is adopted to carry out surface scanning on a workpiece (6) with the temperature of 160-170 ℃, and the scanning laser energy density of the pulsed laser scanning system (4) is 1000-7000 mJ/cm2The laser overlapping degree is 40% -60%;
s2: after the scanning is finished, the pulse laser scanning system (4) is closed, and the workpiece (6) is removed;
in step S1, the gas containing silicon element is silane or a silane derivative that is gaseous at room temperature.
3. The method for preparing the uranium metal surface siliconized modified layer according to claim 2, wherein the method comprises the following steps: in the step S1, the mass ratio of the argon gas and the gas containing a silicon element introduced into the vacuum chamber (2) is 9: 1.
4. The method for preparing the uranium metal surface siliconized modified layer according to claim 3, wherein the method comprises the following steps: in the step S1, the vacuum degree in the vacuum chamber (2) is not more than 30 Pa; the partial pressure of the gas containing the silicon element is 0.005-0.02 mbar.
5. The method for preparing the uranium metal surface siliconized modified layer according to claim 3, wherein the method comprises the following steps: the scanning distance of scanning laser of the pulse laser scanning system (4) is 0.5-1.2 mm, and the scanning speed is 0.5-1.5 mm/s.
6. The method for preparing the uranium metal surface siliconized modified layer according to any one of claims 2 to 5, wherein the method comprises the following steps: before the step S1, S0 is further provided, and S0 is a workpiece (6) preprocessing step including: heating the workpiece (6) in a vacuum chamber (2) with the vacuum degree not more than 20Pa until the temperature of the workpiece (6) reaches 160-170 ℃, keeping the temperature constant, and starting a pulse laser scanning system (4) to carry out nanosecond pulse laser sputtering cleaning on the surface of the workpiece (6), wherein the energy density of the nanosecond pulse laser is 2000mJ/cm2The laser overlap rate is 50% and then the laser scanning system is turned off.
7. The method for preparing the uranium metal surface siliconized modified layer according to any one of claims 2 to 5, wherein the method comprises the following steps: the workpiece (6) is kept at a constant temperature in step S1.
8. The apparatus for preparing the modified layer of uranium metal surface siliconized according to claim 1, wherein: comprises a pulse laser scanning system (4), a workpiece (6), a heating device (3), a vacuum chamber (2), a workbench, a temperature detection device (8) and two air inlets; the workbench, the detection end of the temperature detection device (8) and two air inlets are arranged in the vacuum chamber (2), the vacuum chamber (2) is externally connected with a vacuum pump (1), and the two air inlets are respectively externally connected with a gas carrier source (9) containing silicon element and an argon carrier source (12); the top of the vacuum chamber (2) is provided with a light-transmitting glass window (5), and laser emitted by the pulse laser scanning system (4) scans the surface of a workpiece (6) through the light-transmitting glass window (5).
9. The apparatus for preparing the modified layer by siliconizing on the surface of uranium metal according to claim 8, wherein: the vacuum chamber (2) is a quartz vacuum chamber.
10. The apparatus for preparing the modified layer by siliconizing on the surface of uranium metal according to claim 8, wherein: and two uranium mass flow meters (11) are arranged on gas pipelines between the gas inlet and the gas carrier source (9) containing silicon elements and between the gas inlet and the argon carrier source (12).
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