CN109092319A - A kind of WO3/BiVO4/ FeOOH ternary system composite material and its preparation method and application - Google Patents
A kind of WO3/BiVO4/ FeOOH ternary system composite material and its preparation method and application Download PDFInfo
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- CN109092319A CN109092319A CN201810678391.0A CN201810678391A CN109092319A CN 109092319 A CN109092319 A CN 109092319A CN 201810678391 A CN201810678391 A CN 201810678391A CN 109092319 A CN109092319 A CN 109092319A
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- Prior art keywords
- bivo
- feooh
- composite material
- ternary system
- system composite
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- 229910002915 BiVO4 Inorganic materials 0.000 title claims abstract description 129
- 229910002588 FeOOH Inorganic materials 0.000 title claims abstract description 82
- 239000002131 composite material Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 48
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 31
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- 229960000583 acetic acid Drugs 0.000 claims description 15
- 238000010041 electrostatic spinning Methods 0.000 claims description 15
- VVWRJUBEIPHGQF-MDZDMXLPSA-N propan-2-yl (ne)-n-propan-2-yloxycarbonyliminocarbamate Chemical compound CC(C)OC(=O)\N=N\C(=O)OC(C)C VVWRJUBEIPHGQF-MDZDMXLPSA-N 0.000 claims description 15
- 239000012362 glacial acetic acid Substances 0.000 claims description 14
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 10
- 238000009987 spinning Methods 0.000 claims description 10
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 9
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- PPNKDDZCLDMRHS-UHFFFAOYSA-N dinitrooxybismuthanyl nitrate Chemical class [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 5
- 229910000359 iron(II) sulfate Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 claims description 5
- 239000007832 Na2SO4 Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 239000003426 co-catalyst Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 13
- 238000001069 Raman spectroscopy Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004088 foaming agent Substances 0.000 description 4
- 229910003091 WCl6 Inorganic materials 0.000 description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- FSJSYDFBTIVUFD-XHTSQIMGSA-N (e)-4-hydroxypent-3-en-2-one;oxovanadium Chemical compound [V]=O.C\C(O)=C/C(C)=O.C\C(O)=C/C(C)=O FSJSYDFBTIVUFD-XHTSQIMGSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- FSJSYDFBTIVUFD-SUKNRPLKSA-N (z)-4-hydroxypent-3-en-2-one;oxovanadium Chemical compound [V]=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FSJSYDFBTIVUFD-SUKNRPLKSA-N 0.000 description 1
- ZDQWESQEGGJUCH-UHFFFAOYSA-N Diisopropyl adipate Chemical compound CC(C)OC(=O)CCCCC(=O)OC(C)C ZDQWESQEGGJUCH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/85—Chromium, molybdenum or tungsten
- B01J23/888—Tungsten
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/60—Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/0009—Use of binding agents; Moulding; Pressing; Powdering; Granulating; Addition of materials ameliorating the mechanical properties of the product catalyst
- B01J37/0018—Addition of a binding agent or of material, later completely removed among others as result of heat treatment, leaching or washing,(e.g. forming of pores; protective layer, desintegrating by heat)
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J2523/00—Constitutive chemical elements of heterogeneous catalysts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
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Abstract
The present invention relates to WO3/BiVO4/ FeOOH ternary system composite material and preparation method thereof and the application in photoelectrocatalysis, belong to photoelectrocatalysis field.A kind of WO3/BiVO4/ FeOOH ternary system composite material, main forms are monoclinic phase WO3, monocline BiVO4With amorphous state FeOOH.WO3In bottom, BiVO4It is covered on WO3On, FeOOH is wrapped in outermost layer, wherein BiVO4Quality be WO3/BiVO4/ FeOOH ternary system composite material gross mass 85-95%.WO of the present invention3/BiVO4/ FeOOH ternary system composite material utilizes WO3/ porous BiVO4Efficient hetero-junctions is constructed, FeOOH improves PhotoelectrocatalytiPerformance Performance, can effectively apply in photoelectrocatalysis as co-catalyst, various aspects, has high efficiency and stability.
Description
Technical field
The present invention relates to WO3/BiVO4/ FeOOH ternary system composite material and preparation method thereof and in photoelectrocatalysis
Using belonging to photoelectrocatalysis field.
Background technique
Growing social demand brings lot of challenges to electric power and the energy, for example improves energy efficiency, and exploitation is new
The energy and protection to environment.Hydrogen Energy because its cleaning, renewable, resource is extensive, and have very high energy density recognized
To be ideal energy carrier.And semiconductor material can decompose water energy by optical electro-chemistry (PEC) and convert solar energy into chemistry
Can, cause extensive concern.
BiVO4With relatively narrow forbidden bandwidth (~2.4eV), suitable band structure, excellent stability and cheap
Cost, in photocatalysis degradation organic contaminant, photochemical catalyzing, photoelectrocatalysis, luminescence generated by light etc. have potentially
Using.However, influencing BiVO4The principal element of photo cathode transformation efficiency is limited light absorpting ability, separation of charge efficiency
With surface charge transfer ability, these significantly limit its application in terms of photoelectrocatalysis.Studies have shown that different by constructing
Matter knot can effectively improve separation of charge efficiency, meanwhile, on surface, addition co-catalyst can greatly promote surface charge and turn
Shifting ability, so that improving photoelectrocatalysis decomposes water efficiency.Therefore, based on described above, as can exploring a kind of effective method system
Standby heterojunction structure and co-catalyst will be expected to solve single-phase BiVO at present4Main problem existing for material, effectively pushes photoelectricity
Application of the catalysis technique in field of solar energy conversion.
Summary of the invention
The purpose of the present invention is being directed to the above-mentioned problems in the prior art, it is efficient, stable to provide a kind of catalytic activity
WO3/BiVO4/ FeOOH ternary system composite material.
Object of the invention can be realized by the following technical scheme: a kind of WO3/BiVO4/ FeOOH ternary system composite wood
Expect, the main forms in the composite material are monoclinic phase WO3, monocline BiVO4With amorphous state FeOOH.
In above-mentioned WO3/BiVO4In/FeOOH ternary system composite material, WO3In bottom, BiVO4It is covered on WO3On film,
FeOOH is wrapped in outermost layer, wherein BiVO4Quality be WO3/BiVO4/ FeOOH ternary system composite material gross mass 85-
95%.
In above-mentioned WO3/BiVO4In/FeOOH ternary system composite material, WO3For the WO of partial size 30-60nm3Film, WO3It is thin
Film with a thickness of 30-50nm, BiVO4For porous BiVO4, porous BiVO with a thickness of 300-1800nm, FeOOH with a thickness of
0.5-10nm。
The present invention also provides a kind of above-mentioned WO3/BiVO4The preparation method of/FeOOH ternary system composite material, the system
Preparation Method includes the following steps:
By tungsten hexachloride (WCl6) and polyvinylpyrrolidone (PVP) be dissolved in dimethylformamide (DMF), be stirred at room temperature
It is formed uniformly spin coating liquid, spin coating liquid is taken to be coated to the conducting surface of FTO electro-conductive glass, dry after annealing forms WO3Film substrate；
By PVP, bis- (acetylacetone,2,4-pentanedione) vanadium oxide (VO (acac)2), five water bismuth nitrates and diisopropyl azodiformate
(DIPA) it is dissolved in dehydrated alcohol, glacial acetic acid and dimethylformamide, is stirred into spinning solution at room temperature, with metal needle
Make anode, WO3Film substrate makees cathode, spinning solution electrostatic spinning is obtained precursor thin-film, precursor thin-film is annealed to obtain WO3/ more
Hole BiVO4；
In FeSO4·H2In O solution, WO3/ porous BiVO4Making working electrode, Ag/AgCl (3M KCl) makees reference electrode,
Platinized platinum makees that electrode under the illumination of 300W xenon lamp and AM 1.5G, is carried out light deposition under 0.5V vs.Ag/AgCl current potential, obtained
WO3/BiVO4/ FeOOH ternary system composite material.
Raw material used in ternary system composite material preparation of the present invention is WCl6、PVP、DMF、Bi(NO3)3·5H2O、VO
(acac)2With DIPA, dehydrated alcohol, glacial acetic acid, FeSO4·H2O, wherein PVP, DMF, dehydrated alcohol, glacial acetic acid, DIPA are being forged
Volatilization completely is decomposed during burning processing；WCl6The source W is provided and synthesizes WO3, Bi (NO3)3·5H2O and VO (acac)2It provides respectively
The source Bi is for BiVO4Synthesis, FeSO4·H2O provides the source Fe, synthesizes FeOOH.Azoformic acid is added in electrostatic spinning of the present invention
Diisopropyl ester (DIPA) makees foaming agent, it is dissolved in spinning solution, and a large amount of gas can be released during post annealed,
Form porous BiVO4。
In above-mentioned WO3/BiVO4In the preparation method of/FeOOH ternary system composite material, bis- (acetylacetone,2,4-pentanedione) vanadium oxides
(VO(acac)2) with the mass ratioes of five water bismuth nitrates it is (1.5-2.5): 1.
In above-mentioned WO3/BiVO4In the preparation method of/FeOOH ternary system composite material, anhydrous second in electrostatic spinning solution
The mass ratio of alcohol, glacial acetic acid and dimethylformamide three is 1:(2.5-4): (1.5-2.5).Dehydrated alcohol, glacial acetic acid and two
Methylformamide dissolves five water bismuth nitrates and bis- (acetylacetone,2,4-pentanedione) vanadium oxides as solvent, and when spinning needs to consider the volatilization of solvent
Rate, dehydrated alcohol, glacial acetic acid and dimethylformamide three are matched according to the above ratio can just spin silk.
In above-mentioned WO3/BiVO4In the preparation method of/FeOOH ternary system composite material, anhydrous second in electrostatic spinning solution
The mass ratio of alcohol, glacial acetic acid and dimethylformamide three is 1:3:2.
In above-mentioned WO3/BiVO4In the preparation method of/FeOOH ternary system composite material, electrostatic spinning Anodic and cathode
The distance between be 12-18cm, injection speed 0.05-0.2mm/min, pressure 10-22kV, time of electrostatic spinning is 5-
18min。
In above-mentioned WO3/BiVO4In the preparation method of/FeOOH ternary system composite material, the time of light deposition is 5min-
20min.In this application if sedimentation time is too short, it is less than 5min, FeOOH amount is very little, cannot cover all WO3/ porous
BiVO4, the effect of co-catalyst can not be played completely；If sedimentation time is too long, it is greater than 20min, excessive FeOOH will affect
The light absorption of electrode, the separation of photo-generated carrier and transmitting, to influence photoelectrocatalysis efficiency.
Third object of the present invention is to provide above-mentioned WO3/BiVO4/ FeOOH ternary system composite material is urged in photoelectricity
Application in change, by WO3/BiVO4/ FeOOH ternary system composite material makees work anode, and Ag/AgCl (3M KCl) makees reference electricity
Pole, platinized platinum are made to electrode, under the illumination of xenon lamp, in 0.5M Na2SO4With 0.5M Na2SO3Mixed solution in, utilize electrification
It learns work station and tests its density of photocurrent and impedance.
It is xenon lamp simulated solar irradiation that photocatalysis performance, which detects used light source, and other types of light source also can be used.
Compared with prior art, the present invention has the advantage that
1, WO of the present invention3/BiVO4/ FeOOH ternary system composite material utilizes WO3/ porous BiVO4Building is efficiently heterogeneous
Knot, FeOOH improve PhotoelectrocatalytiPerformance Performance as co-catalyst, various aspects.
2, BiVO of the present invention4Synthesis in by addition DIPA foaming agent, formed porous structure, be convenient for PhotoelectrocatalytiPerformance Performance
The infiltration of electrolyte in test, and more active sites have been manufactured, be conducive to the raising of PhotoelectrocatalytiPerformance Performance.
3, WO of the present invention3/BiVO4/ FeOOH ternary system material can be applied effectively in photoelectrocatalysis, have high efficiency
And stability.
4, WO of the present invention3/BiVO4The preparation method simple process of/FeOOH ternary system photo cathode is controllable, has fine
Repeatability.
Detailed description of the invention
Fig. 1 is WO obtained by the embodiment of the present invention 13Film substrate scanning electron microscope (SEM) figure；
Fig. 2 is WO obtained by the embodiment of the present invention 13Film substrate cross-sectional scans Electronic Speculum (SEM) figure；
Fig. 3 is the resulting WO of the embodiment of the present invention 13/ porous BiVO4Scanning electron microscope (SEM) figure；
Fig. 4 is the resulting WO of the embodiment of the present invention 13/ porous BiVO4Cross-sectional scans Electronic Speculum (SEM) figure；
Fig. 5 is the resulting WO of the embodiment of the present invention 13/BiVO4Scanning electron microscope (SEM) figure of/FeOOH；
Fig. 6 is the resulting WO of the embodiment of the present invention 13/BiVO4Cross-sectional scans Electronic Speculum (SEM) figure of/FeOOH；
Fig. 7 is the resulting WO of the embodiment of the present invention 13/BiVO4The X ray diffracting spectrum (XRD) of/FeOOH photo cathode；
Fig. 8 is the resulting WO of the embodiment of the present invention 13/BiVO4The Raman map (Raman) of/FeOOH photo cathode；
Fig. 9 is the resulting WO of the embodiment of the present invention 23/BiVO4The cross-sectional scans electricity of/FeOOH ternary system composite material
Mirror (SEM) figure；
Figure 10 is the resulting WO of the embodiment of the present invention 33/BiVO4The cross-sectional scans electricity of/FeOOH ternary system composite material
Mirror (SEM) figure；
Figure 11 is the high-resolution TEM figure of material made from the embodiment of the present invention 4；
Figure 12 is the resulting WO of comparative example 1 of the present invention3The Raman map (Raman) of film；
Figure 13 is the resulting BiVO for not adding DIPA of comparative example 2 of the present invention4Scanning electron microscope (SEM) figure；
Figure 14 is the resulting BiVO for not adding DIPA of comparative example 2 of the present invention4X-ray diffraction spectrogram (XRD)；
Figure 15 is the BiVO of the resulting addition DIPA of comparative example 3 of the present invention4Scanning electron microscope (SEM) figure；
Figure 16 is the BiVO of the resulting addition DIPA of comparative example 3 of the present invention4X-ray diffraction spectrogram (XRD)；
Figure 17 is WO of the present invention3Film, BiVO4, porous BiVO4、WO3/ porous BiVO4And WO3/BiVO4/ FeOOH ternary
Density of photocurrent comparison diagram of the system composite material under different biass；
Figure 18 is WO of the present invention3Film, BiVO4, porous BiVO4、WO3/ porous BiVO4And WO3/BiVO4/ FeOOH ternary
System composite material with light application time extended transient photocurrents density comparison diagram；
Figure 19 is WO of the present invention3Film, BiVO4, porous BiVO4、WO3/ porous BiVO4And WO3/BiVO4/ FeOOH ternary
The impedance contrast figure of system composite material.
Specific embodiment
The following is specific embodiments of the present invention, and is described with reference to the drawings and further retouches to technical solution of the present invention work
It states, however, the present invention is not limited to these examples.
Embodiment 1
0.1g polyvinylpyrrolidone (PVP) and 0.02g tungsten hexachloride (WCl are weighed respectively6) it is dissolved in 10ml dimethyl
In formamide (DMF), after stirring 1 hour at room temperature, spin coating liquid is obtained.Take 20 microlitres of spin coatings under 2000 revs/min of revolving speed
In on the conducting surface of FTO electro-conductive glass, 80 DEG C after drying 3 hours, are placed in Muffle furnace and anneal 1 hour for 500 degree, form WO3It is thin
Film substrate.Fig. 1 is the WO obtained3Scanning electron microscope (SEM) picture of film substrate, it can be seen that WO3Particle is about 50nm, and
And it fine and close is covered on FTO conducting surface.Fig. 2 is the WO obtained3The cross-sectional scans electron microscope (SEM) of film substrate, shows
WO3The thickness of film substrate is about 35nm.
By 0.5g PVP, 2.468g Bi (NO3)3·5H2O、1.337g VO(acac)22g is dissolved in 1g DIPA
In DMF, 3g glacial acetic acid and 1g dehydrated alcohol, it is stirred into spinning solution at room temperature, takes in 3mL injected plastic needle tubing, is placed in
On electrostatic spinning machine, setting injection speed is 0.1mm/min.Metal needle makees anode, the aforementioned WO prepared3Film substrate is done
Cathode, the distance between fixed anode and cathode are 15cm, and electrostatic spinning is carried out under 20kV high pressure, and the spinning time is 15 points
Clock obtains precursor thin-film, after being placed in Muffle furnace 450 DEG C of annealing 1 hour, obtains WO3/ porous BiVO4Material.Fig. 3 is gained
WO3/ porous BiVO4Typical scan electron microscope (SEM), show under the action of foaming agent DIPA, BiVO4Layer is porous knot
Structure, Fig. 4 are resulting WO3/ porous BiVO4Cross-sectional scans electron microscope (SEM), illustrate BiVO4The thickness of layer is about 700nm.
In 0.1M FeSO4·H2In O solution, WO3/ porous BiVO4It works electrode, Ag/AgCl (3M KCl) does reference
Electrode, platinized platinum is cooked to electrode, under the illumination of 300W xenon lamp and AM1.5G, carries out 10min's under 0.5V vs.Ag/AgCl current potential
Light deposition obtains WO3/BiVO4/ FeOOH ternary system composite material.Fig. 5 is WO3/BiVO4/ FeOOH ternary system composite wood
The scanning electron microscope (SEM) photograph (SEM) of material shows after depositing FeOOH that material surface becomes more coarse.Fig. 6 is WO3/BiVO4/FeOOH
The cross-sectional scans electron microscope (SEM) of ternary system composite material, it can be seen that deposition FeOOH after electrode thickness hardly
Become.Fig. 7 is obtained WO3/BiVO4The X ray diffracting spectrum of/FeOOH photo cathode illustrates the photoelectrocatalysis anode material
By WO3、BiVO4It is constituted with FeOOH.Fig. 8 is WO3/BiVO4The Raman map (Raman) of/FeOOH ternary system composite material,
It reconfirms by WO3、BiVO4It is formed with FeOOH.
Embodiment 2
Difference with embodiment 1 is only that, BiVO in the embodiment4Layer the spinning time be 10 minutes, other techniques with
Embodiment 1 is identical, and details are not described herein again.Prepared WO3/BiVO4The cross-sectional scans electricity of/FeOOH ternary system composite material
Mirror (SEM) is as shown in figure 9, show BiVO4With a thickness of 300nm.
Embodiment 3
Difference with embodiment 1 is only that, BiVO in the embodiment4Layer the spinning time be 20 minutes, other techniques with
Embodiment 1 is identical, and details are not described herein again.Prepared WO3/BiVO4The cross-sectional scans electricity of/FeOOH ternary system composite material
Mirror (SEM) as shown in Figure 10, shows BiVO4With a thickness of 1800nm.
Embodiment 4
Difference with embodiment 1 is only that the time of light deposition is 5min, other techniques and embodiment 1 in the embodiment
Identical, details are not described herein again.The high-resolution TEM figure of material made from the embodiment is as shown in figure 11.As can be seen from Figure 11, FeOOH
Thickness about 5nm, in the material porous BiVO4Based on material, about 92%.
Embodiment 5
Difference with embodiment 1 is only that the time of light deposition is 15min, other techniques and embodiment 1 in the embodiment
Identical, details are not described herein again.
Embodiment 6
Difference with embodiment 1 is only that the time of light deposition is 20min, other techniques and embodiment 1 in the embodiment
Identical, details are not described herein again.
Embodiment 7
Difference with embodiment 1 is only that, dehydrated alcohol, glacial acetic acid and dimethyl in electrostatic spinning solution in the embodiment
The quality of formamide three is respectively 1g, 2.5g, 1.5g, the i.e. ratio of dehydrated alcohol, glacial acetic acid and dimethylformamide three
For 1:2.5:1.5, other techniques are same as Example 1, and details are not described herein again.
Embodiment 8
Difference with embodiment 1 is only that, dehydrated alcohol, glacial acetic acid and dimethyl in electrostatic spinning solution in the embodiment
The quality of formamide three is respectively 1g, 4g, 2.5g, i.e. the ratio of dehydrated alcohol, glacial acetic acid and dimethylformamide three is
1:4:2.5, other techniques are same as Example 1, and details are not described herein again.
Embodiment 9
Difference with embodiment 1 is only that, (acetylacetone,2,4-pentanedione) vanadium oxides (VO (acac) 2) bis- in the embodiment and five water nitre
The mass ratio of sour bismuth is 1.5:1, other techniques are same as Example 1, and details are not described herein again.
Embodiment 10
Difference with embodiment 1 is only that, (acetylacetone,2,4-pentanedione) vanadium oxides (VO (acac) 2) bis- in the embodiment and five water nitre
The mass ratio of sour bismuth is 2.5:1, other techniques are same as Example 1, and details are not described herein again.
Comparative example 1
With the difference of embodiment 1 the embodiment only prepares WO3Film, other techniques are same as Example 1, herein no longer
It repeats.Raman (Raman) map of obtained material is as shown in figure 12, shows that prepared material is WO3。
Comparative example 2
The difference from embodiment 1 is that the embodiment only prepares BiVO4Layer, and foaming agent DIPA is not added, other techniques
Same as Example 1, details are not described herein again.Figure 13 is the BiVO for not adding DIPA4Scanning electron microscope (SEM) photograph (SEM), it will be seen that electrode material
Surface holes are less.Figure 14 is the X-ray spectrogram (XRD) of the electrode material, shows that prepared material is BiVO4。
Comparative example 3
The difference from embodiment 1 is that the embodiment only prepares BiVO4Layer, other techniques are same as Example 1, herein
It repeats no more.Figure 15 is the BiVO for adding DIPA4Scanning electron microscope (SEM) photograph (SEM) Figure 15 further proves that addition DIPA plays foaming and makees
With forming porous BiVO4.Figure 16 is the X-ray spectrogram (XRD) of the material, shows that prepared material is BiVO4。
Comparative example 4
The difference from embodiment 1 is that the embodiment only prepares WO3With porous BiVO4Layer, other techniques and 1 phase of embodiment
Together, details are not described herein again.
Application Example 1
PhotoelectrocatalytiPerformance Performance test uses three-electrode system, respectively with WO obtained in embodiment 13/BiVO4/ FeOOH tri-
First system composite material is working electrode, and platinized platinum is to electrode, and Ag/AgCl is reference electrode, 0.5M L-1Na2SO4With 0.5M L-1Na2SO3As electrolyte, selection has the electrolytic cell of silica glass window.The optical filter of AM1.5 is equipped with 300W xenon lamp
As analog light source, pass through the density of photocurrent under different biass of electrochemical workstation test sample.
Application Example 2
Only distinguishing with Application Example 1 in the working electrode used is WO prepared by embodiment 23/BiVO4/ FeOOH ternary
System composite material is working electrode, other techniques and test process are identical as Application Example 1, are not repeated herein.
Application Example 3
Only distinguishing with Application Example 1 in the working electrode used is WO prepared by embodiment 33/BiVO4/ FeOOH ternary
System composite material is working electrode, other techniques and test process are identical as Application Example 1, are not repeated herein.
Application Example 4
Only distinguishing with Application Example 1 in the working electrode used is WO prepared by embodiment 43/BiVO4/ FeOOH ternary
System composite material is working electrode, other techniques and test process are identical as Application Example 1, are not repeated herein.
Compare application examples 1
Only distinguishing with Application Example 1 in the working electrode used is WO prepared by comparative example 13Thin-film material, other works
Skill and test process are identical as Application Example 1, are not repeated herein.
Compare application examples 2
Only distinguishing with Application Example 1 in the working electrode used is BiVO prepared by comparative example 24Material, other techniques
And test process is identical as Application Example one, is not repeated herein.
Compare application examples 3
Only distinguishing with Application Example 1 in the working electrode used is porous BiVO prepared by comparative example 34, other techniques
And test process is identical as Application Example 1, is not repeated herein.
Compare Application Example 4
Only distinguishing with Application Example 1 in the working electrode used is WO prepared by comparative example 43/ porous BiVO4,
His technique and test process are identical as Application Example 1, are not repeated herein.
By WO obtained in the present invention3、BiVO4, porous BiVO4、WO3/ porous BiVO4And WO3/BiVO4/ FeOOH ternary
System composite material is tested, their density of photocurrent comparison diagrams under different biass are as shown in figure 17.Illustrate from Figure 17
WO prepared by the present invention3/BiVO4/ FeOOH ternary system composite material is as photo cathode than pure WO3Film, BiVO4, it is porous
BiVO4, porous WO3/BiVO4Material has more excellent PhotoelectrocatalytiPerformance Performance.
WO obtained in the present invention3、BiVO4, porous BiVO4、WO3/ porous BiVO4And WO3/BiVO4/ FeOOH triplet
Composite material is as shown in figure 18 with the extended transient photocurrents density comparison diagram of light application time.Figure 18 further illustrates this
Invent the WO of preparation3/BiVO4The superiority of the PhotoelectrocatalytiPerformance Performance of/FeOOH ternary system composite material.
WO obtained in the present invention3、BiVO4, porous BiVO4、WO3/ porous BiVO4And WO3/BiVO4/ FeOOH triplet
The impedance contrast figure of composite material is as shown in figure 19.Figure 19 illustrates WO prepared by the present invention3/BiVO4/ FeOOH ternary system is multiple
Condensation material has more excellent charge-conduction performance.WO prepared by the present invention is reconfirmed3/BiVO4/ FeOOH ternary system
Composite material has more excellent PhotoelectrocatalytiPerformance Performance.
This place embodiment is not exhaustive claimed midpoint of technical range and in embodiment technology
In scheme to single or multiple technical characteristics it is same replacement be formed by new technical solution, equally all the present invention claims
In the range of protection, and between the parameter that is related to of the present invention program if not otherwise specified, then there is no can not between each other
The unique combinations of replacement.
Specific embodiment described herein is only an example for the spirit of the invention.The neck of technology belonging to the present invention
The technical staff in domain can do various modifications or supplement or is substituted in a similar manner to described specific embodiment, but simultaneously
Spirit or beyond the scope defined by the appended claims of the invention is not deviated by.
It is skilled to this field although present invention has been described in detail and some specific embodiments have been cited
For technical staff, as long as it is obvious for can making various changes or correct without departing from the spirit and scope of the present invention.
Claims (10)
1. a kind of WO3/BiVO4/ FeOOH ternary system composite material, which is characterized in that the main table in the composite material
Existing form is monoclinic phase WO3, monocline BiVO4With amorphous state FeOOH.
2. WO according to claim 13/BiVO4/ FeOOH ternary system composite material, which is characterized in that WO3In bottom,
BiVO4It is covered on WO3On, FeOOH is wrapped in outermost layer, wherein BiVO4Quality be WO3/BiVO4/ FeOOH ternary system is multiple
Condensation material gross mass 85-95%.
3. WO according to claim 1 or 23/BiVO4/ FeOOH ternary system composite material, which is characterized in that WO3For grain
The WO of diameter 30-60nm3Film, WO3Film with a thickness of 30-50nm, BiVO4For porous BiVO4, porous BiVO with a thickness of
300-1800nm, FeOOH with a thickness of 0.5-10nm.
4.WO3/BiVO4The preparation method of/FeOOH ternary system composite material, which is characterized in that the preparation method includes
Following steps:
Tungsten hexachloride and polyvinylpyrrolidone are dissolved in dimethylformamide, is stirred at room temperature and is formed uniformly spin coating liquid, takes rotation
Masking liquid is coated to the conducting surface of FTO electro-conductive glass, and dry after annealing forms WO3Film substrate；
PVP, bis- (acetylacetone,2,4-pentanedione) vanadium oxides, five water bismuth nitrates and diisopropyl azodiformate are dissolved in dehydrated alcohol, ice
In acetic acid and dimethylformamide, it is stirred into spinning solution at room temperature, anode, WO are made with metal needle3Film substrate makees yin
Spinning solution electrostatic spinning is obtained precursor thin-film by pole, and precursor thin-film is annealed to obtain WO3/ porous BiVO4；
In FeSO4·H2In O solution, WO3/ porous BiVO4Making working electrode, Ag/AgCl makees reference electrode, and platinized platinum is made to electrode,
Under the illumination of 300W xenon lamp and AM 1.5G, light deposition is carried out under 0.5V vs.Ag/AgCl current potential, obtains WO3/BiVO4/
FeOOH ternary system composite material.
5. WO according to claim 43/BiVO4The preparation method of/FeOOH ternary system composite material, which is characterized in that
The mass ratio of bis- (acetylacetone,2,4-pentanedione) vanadium oxides and five water bismuth nitrates is (1.5-2.5): 1.
6. WO according to claim 43/BiVO4The preparation method of/FeOOH ternary system composite material, which is characterized in that
The mass ratio of dehydrated alcohol, glacial acetic acid and dimethylformamide three is 1:(2.5-4 in electrostatic spinning solution): (1.5-2.5).
7. WO according to claim 63/BiVO4The preparation method of/FeOOH ternary system composite material, which is characterized in that
The mass ratio of dehydrated alcohol, glacial acetic acid and dimethylformamide three is 1:3:2 in electrostatic spinning solution.
8. WO according to claim 43/BiVO4The preparation method of/FeOOH ternary system composite material, which is characterized in that
The distance between electrostatic spinning Anodic and cathode are 12-18cm, injection speed 0.05-0.2mm/min, pressure 10-
22kV, the time of electrostatic spinning are 5-18min.
9. WO according to claim 43/BiVO4The preparation method of/FeOOH ternary system composite material, which is characterized in that
The time of light deposition is 5min-20min.
10.WO3/BiVO4Application of/FeOOH the ternary system composite material in photoelectrocatalysis, which is characterized in that by WO3/
BiVO4/ FeOOH ternary system composite material makees work anode, and Ag/AgCl makees reference electrode, and platinized platinum is made to electrode, in xenon lamp
Under illumination, in 0.5M Na2SO4With 0.5M Na2SO3Mixed solution in, test its density of photocurrent using electrochemical workstation
And impedance.
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