CN109087929A - Back side illumination image sensor and its manufacturing method - Google Patents
Back side illumination image sensor and its manufacturing method Download PDFInfo
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- CN109087929A CN109087929A CN201810965671.XA CN201810965671A CN109087929A CN 109087929 A CN109087929 A CN 109087929A CN 201810965671 A CN201810965671 A CN 201810965671A CN 109087929 A CN109087929 A CN 109087929A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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Abstract
This disclosure relates to back side illumination image sensor and its manufacturing method.Present disclose provides back-illuminated cmos image sensors, comprising: substrate has first surface and the second surface opposite with first surface；First conduction region is filled in and is recessed inwardly in the first opening to be formed from first surface；Source following transistor is arranged in the substrate on the side of the separate second surface of first surface；First insulating layer is formed on the side of separate first surface of second surface；Second insulating layer is formed on the side of separate first surface of the first insulating layer；Second conduction region, in the second opening of second insulating layer；Organic photoelectric conversion coating, it is formed on the side of separate first surface of second insulating layer, wherein the first conduction region is connect with source following transistor, second conduction region is connect with organic photoelectric conversion coating, and the first conduction region, the first insulating layer and the second conduction region form capacitance type structure to store the photo-generated carrier from organic photoelectric conversion coating.
Description
Technical field
This disclosure relates to semiconductor field, in particular to back side illumination image sensor and its manufacturing method.
Background technique
Imaging sensor is the semiconductor devices for converting optical signals to electric signal, and important work is played in the information age
With.Semiconductor image sensor mainly includes charge-coupled device (Charge Coupled Device, CCD) imaging sensor
With complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) image sensing
Device.In recent years, high by low cost, high efficiency, transmission speed with the raising of cmos image sensor manufacturing technology level
Etc. advantages gradually replace ccd image sensor as mainstream.
Cmos image sensor includes cmos image sensor front-illuminated and two kinds of structures of back-illuminated cmos image sensors
Type.Wherein, back-illuminated cmos image sensors are with its unique structure, so that light can be via the lining not stopped by wiring layer
Bottom back side is emitted directly toward photoelectric conversion region, avoids the interference of electronic circuit, thus significantly improve quantum efficiency and filling because
Son.
With the sustainable development of technique, device size constantly reduces, and corresponding control device is continuously increased, accordingly, there exist
Improve the needs of the performance parameters such as fill factor, the full-well capacity of back-illuminated cmos image sensors and reasonable Arrangement device.
Summary of the invention
The first purpose of the disclosure is to provide a kind of novel back-illuminated cmos image sensors and its manufacturing method.
According to the disclosure in a first aspect, providing a kind of back-illuminated cmos image sensors characterized by comprising
Substrate, the substrate have first surface and the second surface opposite with first surface；First conduction region, described first is conductive
Area, which is filled in, to be recessed inwardly in the first opening to be formed from the first surface；Source following transistor, the source electrode follow crystalline substance
Body pipe is arranged in the substrate on the side far from the second surface of the first surface；First insulating layer, described first
Insulating layer is formed on the side far from the first surface of the second surface；Second insulating layer, the second insulating layer
It is formed on the side far from the first surface of first insulating layer；Second conduction region, second conduction region are located at
In second opening of the second insulating layer；And organic photoelectric conversion coating, the organic photoelectric conversion coating are formed in described
On the side far from the first surface of two insulating layers, wherein first conduction region and the source following transistor connect
Connect, second conduction region is connect with the organic photoelectric conversion coating, and first conduction region, first insulating layer and
Second conduction region forms capacitance type structure to store the photo-generated carrier from the organic photoelectric conversion coating.
According to the second aspect of the disclosure, a kind of method for manufacturing back-illuminated cmos image sensors is provided,
It is characterized in that, which comprises provide substrate, the substrate has first surface and second table opposite with first surface
Face；It is recessed inwardly to form the first opening from the first surface, be filled in first opening to form the first conduction
Area；Source following transistor is set in the substrate on the side far from the second surface of the first surface；Described
The first insulating layer and second insulating layer are sequentially formed on the side far from the first surface of second surface；Absolutely described second
The second opening is formed in edge layer, is filled in second opening to form the second conduction region；And absolutely described second
Organic photoelectric conversion layer is formed on the side far from the first surface of edge layer；Wherein, make first conduction region with it is described
Source following transistor connection, second conduction region connect with the organic photoelectric conversion coating, first conduction region, described
First insulating layer and second conduction region form capacitance type structure and are carried with storing the photoproduction from the organic photoelectric conversion coating
Stream.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 instantiates the working circuit diagram of the back side illumination image sensor of traditional 4T dot structure.
Fig. 2 instantiates the schematic cross-section of the back side illumination image sensor of traditional 4T dot structure.
Fig. 3 instantiates the working circuit diagram of the back side illumination image sensor of some exemplary embodiments according to the disclosure.
Fig. 4 instantiates the schematic cross-section of the back side illumination image sensor of some exemplary embodiments according to the disclosure.
Fig. 5 instantiates the structure arrangement signal of the back side illumination image sensor of some exemplary embodiments according to the disclosure
Figure.
Fig. 6 instantiates the structure arrangement of the back side illumination image sensor of the other exemplary embodiment according to the disclosure
Schematic diagram.
Fig. 7 instantiates the method for manufacturing back side illumination image sensor of some exemplary embodiments according to the disclosure
Flow chart.
Fig. 8 A to 8D instantiates the mistake of the manufacture back side illumination image sensor according to some exemplary embodiments of the disclosure
The schematic cross-section of journey.
Fig. 9 instantiates the section signal of the back side illumination image sensor of the other exemplary embodiment according to the disclosure
Figure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
Multiple pixels are generally included in imaging sensor, the structure of pixel has very big shadow for the performance of imaging sensor
It rings.Traditional, 4T dot structure becomes the dot structure of current main-stream with smaller noise and superior performance.Fig. 1 is instantiated
The working circuit diagram of the back side illumination image sensor of traditional 4T dot structure.Referring to Fig.1,4T dot structure includes: photoelectric conversion
Area PD, transmission transistor Tx, reset transistor Rx, source following transistor Sx, selection transistor Ax and floating diffusion region
FD.Transmission transistor Tx, reset transistor Rx, source following transistor Sx, selection transistor Ax respectively include transmission grid TG,
Reset grid RG, source follower gate SF, selection gate SEL.
Below with reference to the image sensing principle of Fig. 1 description tradition 4T dot structure.Firstly, make selection transistor Ax and
Reset transistor Rx conducting resets floating diffusion region FD using supply voltage VDD, and reads the voltage of FD by Vout.Then
Rx is disconnected, transmission transistor Tx is connected, the charge (electronics or hole) that exposure stage generates can shift and accumulate floating diffusion
In area FD, the bias voltage so as to cause the grid SF of source following transistor Sx changes, and reads FD at this time by Vout
Voltage.The voltage change that FD caused by photogenerated charge has been calculated in difference is carried out by the sampling result to FD voltage twice
Change, to realize the transformation from optical signal to electric signal.It can achieve the purpose that reduce noise using the method for two sub-samplings.
Fig. 2 instantiates the schematic cross-section of the back side illumination image sensor of traditional 4T dot structure.As shown in Fig. 2, image
Sensor 1 includes: substrate 100 comprising first surface 100a and second surface 100b；Photoelectric conversion region PD1, PD2, setting
In the substrate 100, the first impurity range 110 and the second impurity range 120 are respectively included；Insulating layer 160 and the first conduction region
170, it is arranged in substrate 100 and separates photoelectric conversion region PD1, PD2；Doped layer 150,151, along insulating layer
160 surface is formed, and doped layer 151 can connect to first voltage V1；Transmission transistor 210 is arranged in first surface 100a
On the first impurity range 110 bottom surface on；Oxide layer 200, between substrate 100 and transmission transistor 210；Metal interconnecting layer
300, it is formed on the outer surface of first surface 100a, and follow crystal including the first conduction region 170 is connected to source electrode
The interconnection structure 220 of pipe, interconnection structure 220 can be used for for second voltage V2 being applied to the first conduction region 170, second voltage V2
It can be positive bias voltage；Floating diffusion region FD1 is arranged on the second impurity range 120, and adjacent with transmission transistor 210；
The lining on the side of the separate second surface 100b of first surface 100a is arranged in source following transistor (not shown)
In bottom；Colour filter 400 is arranged on the outer surface of second surface 100b；Lenticule 700, be arranged in colour filter 400 far from the
On the surface of two surface 100b.
With reference to Fig. 2, if light is radiated on lenticule 700, lining is incident on by colour filter 400 and second surface 100b
In bottom 100.When incident light reaches photoelectric conversion region PD1, PD2, electron-hole pair can be generated, charge (electronics or hole) is logical
It crosses transmission transistor 210 to be transferred in floating diffusion region FD1, causes the voltage change of source following transistor, to export electricity
Signal.
However, the inventors of the present application found that needing more control device, and one in above-mentioned imaging sensor
A pixel must store photo-generated carrier comprising a floating diffusion region.As device size constantly reduces, this can be to filling
The performance parameters such as the factor and full-well capacity bring adverse effect.The performance parameters such as fill factor, full-well capacity are improved in order to meet
And the needs of reasonable Arrangement device, applicant proposed improved organic back-illuminated cmos image sensors and its manufacturers
Method.
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.In the figure for ease of description, the thickness of layer and region has been zoomed in or out, shown size does not represent reality
Border size.Although these figures can not reflect to entirely accurate the actual size of device, they completely reflect
Upper and lower and neighbouring relations between mutual alignment between region and composed structure, especially composed structure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.That is, method herein is to show in an exemplary fashion, to illustrate this public affairs
The different embodiments of structures and methods in opening.It will be understood by those skilled in the art, however, that they, which are merely illustrative, to be used to
The exemplary approach of the invention implemented, rather than mode exhausted.In addition, attached drawing is not necessarily drawn to scale, some features can
It can be amplified to show the details of specific component.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In order to more comprehensively, the present invention is expressly understood, the novel skill according to the disclosure is illustrated below in conjunction with attached drawing
Art.
Fig. 3 instantiates the operating circuit of organic back side illumination image sensor of some exemplary embodiments according to the disclosure
Figure.As shown in figure 3, back side illumination image sensor includes: that organic photoelectric transition zone PD3, reset transistor Rx, source electrode follow crystal
Pipe Sx, selection transistor Ax and storage capacitance C3.Reset transistor Rx, source following transistor Sx, selection transistor Ax point
Grid RG, source follower gate SF, selection gate SEL Bao Kuo not reset.In this exemplary embodiment, organic light can be used
Electric transition zone PD3 replaces photoelectric conversion region PD as shown in Figure 1, and storage capacitance C3 can be used and replace institute as shown in figure 1
The transmission transistor Tx and floating diffusion region FD that show stores charge.In this way, saving transmission transistor Tx and floating diffusion region
The space of FD.The space of saving can be used to place other devices to realize more advanced functions, or can not also put device
Part is to improve fill factor.
It is of the invention although illustrating only single organic photoelectric transition zone PD3 and three transistor Rx, Sx, Ax in Fig. 3
Design can be without being limited thereto.In some embodiments, back side illumination image sensor may include multiple organic photoelectric transition zones
PD3 and multiple transistor Rx, Sx, Ax, and reset transistor Rx, source following transistor Sx, selection transistor Ax can be by
Adjacent pixel shares, so as to improve the integrated level of imaging sensor.
Fig. 4 instantiates the schematic cross-section of the back side illumination image sensor 2 of some exemplary embodiments according to the disclosure.
As shown in figure 4, back side illumination image sensor 2 includes: substrate 100, with first surface 100a and with first surface 100a
Opposite second surface 100b；First conduction region 170 is filled in the first opening for being recessed inwardly and being formed from first surface 100a
In；The side of the separate second surface 100b of first surface 100a is arranged in source following transistor (not shown)
On substrate in；First insulating layer 500 is formed on the side of separate first surface 100a of second surface 100b；Second
Insulating layer 510 is formed on the side of separate first surface 100b of the first insulating layer 500；Second conduction region 505, position
In the second opening of second insulating layer 510；And organic photoelectric conversion coating PD3, it is formed in the separate of second insulating layer 510
On the side of first surface 100a, wherein the first conduction region 170 is connect with source following transistor, the second conduction region 505 with have
The PD3 connection of machine photoelectric conversion layer, and the first conduction region 170, the first insulating layer 500 and the second conduction region 505 form condenser type
Structure C 3 is to store the photo-generated carrier from organic photoelectric conversion coating PD3.
In some embodiments, substrate 100 may include multiple pixels.Substrate 100 may, for example, be silicon substrate.Substrate
100 may include the impurity of the first conduction type, such as n-type impurity (for example, aluminium, boron, indium, gallium).In some embodiments, it serves as a contrast
Bottom may include unitary semiconductor material or compound semiconductor materials (such as silicon carbide, SiGe, GaAs, gallium phosphide, phosphatization
Indium, indium arsenide and/or indium antimonide etc.) or combinations thereof.
In some embodiments, substrate 100 can also include photoelectric conversion region PD1, PD2 formed therein.Photoelectricity turns
Area PD1, PD2 is changed to be separated by the first conduction region 170.Each of photoelectric conversion region PD1, PD2 may include the first impurity range
110 and second impurity range 120.First impurity range 110 can be the region of the impurity doped with the first conduction type, and can be with
As well region, such as p-well.Second impurity range 120 can be the region of the impurity doped with the second conduction type, such as N-type is mixed
Miscellaneous area.First impurity range 110 can be formed on the medial surface of first surface 100a, or be separated centainly with first surface 100a
It is formed in inside substrate 100 to distance.Second impurity range 120 can be formed in the first impurity range 110.Although only example in Fig. 4
Show photoelectric conversion region PD1, PD2, but photoelectric conversion region is not limited to two, may include multiple photoelectric conversion regions, it is more
A photoelectric conversion region can be set to be separated in substrate 100 and each other by multiple first conduction regions.
In some embodiments, substrate 100 can also include transmission transistor 210.Transmission transistor 210 can be set
On the surface corresponding to the first impurity range 110 on first surface 100a.The transmission grid TG of transmission transistor 210 can extend
Into the first impurity range 110.Grid oxic horizon 200 can be set between transmission transistor 210 and substrate 100.
In some embodiments, substrate 100 can also include doped layer 150 and insulating layer 160.Insulating layer 160 can be with shape
Extend on the outer surface of the first conduction region 170, and along the outer surface of the first conduction region 170.Insulating layer 160 can
For example by siliceous material (for example, silica, silicon nitride etc.) and/or high-k dielectric material (for example, aluminium oxide, oxidation
Hafnium etc.) at least one of formed.Doped layer 150 can be formed on the outer surface of insulating layer 160, can doped with
The impurity of the different conduction type of substrate 100, for example, the impurity of the second conduction type.In addition, doped layer 150 can wrap containing
The protrusion 151 extended along first surface 100a.Potential barrier, and doped layer can be formed between doped layer 150,151 and substrate
151 can connect to first voltage V1, then electronics caused by the defect of interface can be led from first voltage V1 due to the presence of potential barrier
Electric wire carrying-off, without flowing into photoelectric conversion region PD1 and PD2.
As shown in Figure 4, the first surface 100a and second surface 100b of the first about 170 conduction region connection substrate 100.
In some embodiments, the first conduction region 170 can be by least one of DOPOS doped polycrystalline silicon or metal (for example, aluminium, tungsten etc.)
It is formed.In some embodiments, the first conduction region 170 can be formed by deep trench isolation technology.
As shown in Figure 4, the first insulating layer 500 can extend along the outer surface of the second surface 100b of substrate 100.The
The lower surface of one insulating layer 500 can directly be contacted with the second surface 100b of the top surface of the first conduction region 170 and substrate 100,
The upper surface of first insulating layer 500 can directly connect with the bottom surface of the second conduction region 505 and the lower surface of second insulating layer 510
Touching.In some embodiments, the first insulating layer 500 can be for example by siliceous material (for example, silica, silicon nitride etc.) shape
At.
As shown in Figure 4, second insulating layer 510 can extend along the upper surface of the first insulating layer 500.In some implementations
In example, second insulating layer 510 can have the thickness bigger than the first insulating layer.Second insulating layer 510 can be for example by siliceous
Material (for example, silica, silicon nitride etc.) formation.
In some embodiments, back side illumination image sensor 2 can also include colour filter 410 and 420.As shown in Figure 4,
Colour filter 410 and 420 can be covered by organic photoelectric conversion coating PD3 and be arranged in second insulating layer 510.Colour filter 410
It can respectively correspondingly be covered on photoelectric conversion region PD1 and PD2 with 420, and be separated by the second conduction region 505.Such as Fig. 5 institute
Show, colour filter 410, which may be constructed such that, allows feux rouges LR by preventing blue light LB from passing through, and colour filter 420 may be constructed such that
Allow blue light LB by preventing feux rouges LR from passing through.In the PD1 of photoelectric conversion region, feux rouges LR can produce the first photosignal
S1, in the PD2 of photoelectric conversion region, blue light LB can produce the second photosignal S2.
Note that those skilled in the art should manage although Fig. 4 and Fig. 5 illustrate only a pair of of colour filter 410 and 420
Solution, as shown in Figure 6, colour filter can also be the color filter array for including multipair colour filter.In addition, those skilled in the art are also
Feux rouges LR is allowed to allow blue light LB to pass through by colour filter 420 it will be appreciated that though illustrating only colour filter 410 here, but
It is colour filter 410 also it is so structured that any one in permission blue light LB or green light LG is by preventing the light of other colors logical
It crosses, colour filter 420 is also it is so structured that allow any one light by preventing other colors in feux rouges LR or green light LG
Pass through, if adjacent colour filter allow by light color it is different, and allow by light and organic photoelectric turn
The color for changing the light that layer PD3 is absorbed is different.
As shown in Figure 4, the second conduction region 505 can be located in second insulating layer 510, between colour filter 410 and 420
In second opening.In some embodiments, the second conduction region 505 can be by DOPOS doped polycrystalline silicon or metal (for example, aluminium, tungsten etc.)
At least one formed.In some embodiments, the second conduction region 505 can be formed by shallow trench isolation technology.
In some embodiments, back side illumination image sensor 2 can also include transparent electrode 610 and 620.Transparent electrode
610 can be set in second insulating layer 510, and be arranged above colour filter 410 and 420.Transparent electrode 610 can be with
The top surface of two conduction regions 505 directly contacts, so that organic photoelectric conversion coating PD3 be made to connect with the second conduction region 505.Transparent electrode
610 can directly contact with the lower surface of organic photoelectric conversion coating PD3, but not contact with colour filter 410 and 420.Transparent electricity
Pole 620 can extend along the upper surface of organic photoelectric conversion coating PD3 and directly contact with organic photoelectric conversion coating PD3.Thoroughly
Prescribed electrode 620 can be applied with tertiary voltage V3.Tertiary voltage V3 can be positive bias voltage.In some embodiments, third
Voltage V3 can be the operation voltage for operating organic photoelectric conversion layer PD3.When tertiary voltage V3 is applied to transparent electrode
The electronics formed in organic photoelectric conversion layer PD3 when 620 or hole can pass through transparent electrode 610 and the second conduction region 505
It is transferred at the contact surface of the second conduction region 505 and the first insulating layer 500, to correspondingly incude in the first conduction region 170
Potential out.Transparent electrode 610 and 620 can be formed for example by transparent conductive oxide.
As shown in figure 4, organic photoelectric conversion coating PD3 is formed in second insulating layer 510 and transparent electrode 610.Some
In embodiment, organic photoelectric conversion coating PD3 may include the p-type organic semiconductor material and N-shaped organic semiconductor for constituting pn-junction
Material.With reference to Fig. 5, organic photoelectric conversion coating PD3, which may be constructed such that, absorbs green light LG, and generates electronics-sky from green light LG
Cave pair, to generate third optical signal S3.It therefore, there is no need to provide corresponding colour filter to organic photoelectric conversion coating PD3.It is organic
Photo-generated carrier caused by photoelectric conversion layer PD3 is flowed by the second conduction region 505, to be stored in by the second conduction region
505, in the capacitance type structure C3 that the first insulating layer 500, the first conduction region 170 are formed.Although Fig. 4 and Fig. 5 illustrate only organic
Photoelectric conversion layer PD3 absorbs the example of green light LG, it should be appreciated to those skilled in the art that organic photoelectric conversion coating PD3
It is so structured that any one in the light of tri- kinds of absorption feux rouges LR, green light LG, blue light LB colors, as long as itself and colour filter 410
It is different with the color for the light that 420 are absorbed.
In some embodiments, back side illumination image sensor 2 can also include lenticule 700.Lenticule 700 can be set
In the upper surface of organic photoelectric conversion coating PD3, and each lenticule is accordingly covered on each colour filter.Although Fig. 4 only shows
Gone out a pair of of lenticule 700, it should be appreciated to those skilled in the art that with colour filter correspondingly, lenticule may be
Microlens array including multiple lenticules.
In some embodiments, back side illumination image sensor 2 can also include metal interconnecting layer 300.Metal interconnecting layer 300
It is formed on the outer surface of first surface 100a.Metal interconnecting layer 300 includes making source following transistor and the first conduction region 170
The interconnection structure 220 of connection.Although being not shown, metal interconnecting layer 300 also may include multilayer.
In some embodiments, back side illumination image sensor 2 can also include slide glass 800.Slide glass 800 can be mutual with metal
Even layer 300 is bonded together.
Fig. 7 instantiates the method for manufacturing back side illumination image sensor of some exemplary embodiments according to the disclosure
Flow chart.Fig. 8 A to 8D instantiates the mistake of the manufacture back side illumination image sensor according to some exemplary embodiments of the disclosure
The schematic cross-section of journey.Note that Fig. 8 A to Fig. 8 D has carried out example by taking the structure of back side illumination image sensor 2 shown in Fig. 4 as an example
Show, but it will be apparent to one skilled in the art that may be implemented by the method 700 for manufacturing back side illumination image sensor a variety of
Image sensor structure, back side illumination image sensor 2 including but not limited to shown in Fig. 4.
It is illustrated below in conjunction with Fig. 7 and Fig. 8 A to Fig. 8 D.
As shown in fig. 7, in step 720, providing substrate, provided substrate has first surface and and first surface
Opposite second surface.In step 720, it is recessed inwardly to form the first opening from the first surface, in first opening
In be filled to form the first conduction region.In some embodiments, section of imaging sensor corresponding to step 710 and 720
Face figure can be as shown in Figure 8 A.Substrate 100 is provided, with first surface 100a and the third surface opposite with first surface
100c.With reference to Fig. 8 A, multiple photoelectric conversion regions, such as photoelectric conversion region PD1 and PD2, multiple photoelectricity can be formed in substrate 100
Transition zone is separated by the first conduction region 170.Mask layer (not shown) can be formed on the first surface 100a of substrate 100, from
The one surface side 100a performs etching the substrate 100 that mask layer exposes to form the first opening.Next, by the first table
Forming mask pattern on the side of the separate third surface 100c of face 100a and carrying out N-shaped ion implanting to form in the substrate
Doped layer 150 and 151, removes mask pattern again later.Next, can be by passing through chemical vapor deposition in the first opening
CVD forms insulating layer 160 and the first conduction region 170.Insulating layer 160 can extend along the side surface of the first opening, and first
Conduction region 170 can be formed in insulating layer 160.
With continued reference to Fig. 7, in step 730, the lining on the side of the separate third surface 100c of first surface 100a
Source following transistor is set in bottom.In some embodiments, the sectional view of back side illumination image sensor corresponding to step 730
It can be as shown in Figure 8 B.Referring to Fig. 8 B, the correspondence on first surface 100a is can be set in source following transistor (not shown)
In in the substrate on the bottom surface of the first conduction region 170 and floating diffusion region FD1.It in some embodiments, can be in first surface
Transmission transistor 210 is set on the bottom surface corresponding to the first impurity range 110 on 100a, and makes transmission transistor 210 and floats
It is adjacent to set diffusion region FD1.It in some embodiments, can also be on the side of the separate third surface 100c of first surface 100a
Metal interconnecting layer 300 is formed, so that the first conduction region 170 is connected to source following transistor via metal interconnecting layer 300.Metal
Interconnection layer 300 may include a part of source following transistor and transmission transistor 210.
Next, as shown in Figure 8 C, metal interconnecting layer 300 and slide glass 800 are bonded together.It then can be to substrate
100 third surface 100c carries out thinned and planarization process, so that the top surface of the first conduction region 170 is exposed, while being subtracted
Second surface 100b after thin.Then, with continued reference to Fig. 7, in step 740, in the separate first surface of second surface 100b
The first insulating layer 500 and second insulating layer 510 are sequentially formed on the side of 100a.First insulating layer 500 can pass through atomic layer
Deposition ALD is formed.Second insulating layer 510 can be formed by chemical vapor deposition CVD, for example, can pass through normal pressure chemical gas
Mutually deposition APCVD, low-pressure chemical vapor deposition LPCVD, ultra-high vacuum CVD UHVCVD, laser chemical vapor deposition
The formation such as LCVD, metal-organic chemical vapor deposition equipment MOCVD, plasma enhanced chemical vapor deposition PECVD.
With continued reference to Fig. 7, in step 750, in second insulating layer 510 formed second opening, in the second opening into
To form the second conduction region 505, that is filled can be at least one in polysilicon or metal (for example, aluminium, tungsten etc.) for row filling
Kind.Second conduction region 505 is located at the top of the first conduction region 170, and passes through the first insulating layer 500 and the first conduction region 170
It separates.
In some embodiments, as in fig. 8d, color filter array can also be set in second insulating layer 510, for example,
Colour filter 410 and 420.Color filter array is covered by organic photoelectric conversion coating PD3, wherein can be made each in color filter array
A colour filter be accordingly covered on each photoelectric conversion region in multiple photoelectric conversion regions and by the second conduction region 505 every
It opens.In some embodiments, color filter array may include one or more pairs of colour filters.In some embodiments, it can will filter
Each colour filter in color device array be constructed to allow for red R, green G, in indigo plant tri- kinds of colors of B, with organic photoelectric conversion coating PD3 institute
A kind of light of the different color of the color of the light of absorption passes through, and adjacent colour filter allow by light color it is different.
With continued reference to Fig. 7, in step 760, formed on the side of the separate first surface 100a of second insulating layer 510
Organic photoelectric conversion coating PD3.In step 770, it connect the first conduction region 170 with source following transistor, the second conduction region
505 connect with organic photoelectric conversion coating PD3, and the first conduction region 170, the first insulating layer 500 and the second conduction region 170 form capacitor
Formula structure C 3 is to store the photo-generated carrier from organic photoelectric conversion coating PD3.It in some embodiments, can be by organic photoelectric
Conversion coating PD3 be configured to absorb red R, green G, indigo plant tri- kinds of colors of B light in any one.
In some embodiments, transparent electrode 610 and 620 can be formed in the upper and lower surface of organic photoelectric conversion coating PD3.
In some embodiments, lenticule can also be set on the side of the separate second surface 100b of organic photoelectric conversion coating PD3
Array 700, each lenticule in microlens array 700 are accordingly covered on each colour filter in color filter array.
In addition, in some embodiments, high k can also be formed between the first insulating layer 500 and second insulating layer 510 and be situated between
Matter layer 504.
The section that Fig. 9 instantiates the back side illumination image sensor 3 of the other exemplary embodiment according to the disclosure shows
It is intended to.Back side illumination image sensor 3 shown in Fig. 9 is the variation example of back side illumination image sensor 2 shown in Fig. 4, above
The content described in back side illumination image sensor 2 is readily applicable to the correspondence of back side illumination image sensor shown in Fig. 9
Feature, therefore herein only to the difference of the two emphatically be illustrated.It note that the example in Fig. 4 and Fig. 9 is not intended to figure
It is construed as limiting the invention.
As shown in figure 9, back side illumination image sensor 3 can also include high-k dielectric layer 504, high-k dielectric layer 504 can be with shape
At between the first insulating layer 500 and second insulating layer 510.In some embodiments, high-k dielectric layer 504, which can be, is forming
It is formed on the first insulating layer 500 after first insulating layer 500, and can be and formed by atomic layer deposition.
In Fig. 9, the first conduction region 170, the first insulating layer 500, high-k dielectric layer 504 and the second conduction region 505 form condenser type knot
Structure C3.Caused by high-k dielectric layer 504 can adsorb the defect generated on the second face 100b due to organic semiconductor device 100
Charge further improves the performance of back side illumination image sensor to efficiently reduce dark current.
In conclusion the back side illumination image sensor of embodiment according to the present invention can save transmission transistor Tx and float
Set the space of diffusion region FD.The space of saving can be used to place other devices to realize more advanced functions, make it possible to
More reasonably arranging devices, or device can not also be put to improve fill factor.The increase of fill factor improves back
The full-well capacity of illuminated image sensor.In addition, back side illumination image sensor according to the present invention can also mitigate dark current, mention
High s/n ratio, to effectively promote the overall performance of back side illumination image sensor.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
In addition, middle certain term of use can also be described below, and thus not anticipate just to the purpose of reference
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
It should be understood that the embodiment of present invention disclosed is not limited to specific structure disclosed herein, processing step
Rapid or material, but its equivalent is expanded to as those of ordinary skill in the related art will be recognized.It should also be understood that
, terminology employed herein is used only for the purpose of describing specific embodiments, is not intended to limit.
In addition, described feature, structure or feature can in any suitable manner in one or more embodiments
Combination.In the above description, numerous details and example are provided, to provide the thorough understanding to the embodiment of the present invention.
But one skilled in the relevant art will recognize that, the present invention can be in the feelings of one or more of no detail
It practices, or can be practiced with other methods, component, material etc. under condition.In other cases, well-known structure, material
Material or operation are not shown or described in detail, to avoid fuzzy each aspect of the present invention.
In addition, embodiment of the present disclosure can also include following example:
1) a kind of back-illuminated cmos image sensors characterized by comprising
Substrate, the substrate have first surface and the second surface opposite with first surface；
First conduction region, first conduction region are filled in the first opening for being recessed inwardly and being formed from the first surface
In；
The separate second surface of the first surface is arranged in source following transistor, the source following transistor
Side on substrate in；
First insulating layer, first insulating layer are formed in the side far from the first surface of the second surface
On；
Second insulating layer, the second insulating layer are formed in the side far from the first surface of first insulating layer
On；
Second conduction region, second conduction region are located in the second opening of the second insulating layer；And
Organic photoelectric conversion coating, the organic photoelectric conversion coating are formed in separate first table of the second insulating layer
On the side in face,
Wherein, first conduction region is connect with the source following transistor, second conduction region with it is described organic
Photoelectric conversion layer connection, and first conduction region, first insulating layer and second conduction region form condenser type knot
Structure is to store the photo-generated carrier from the organic photoelectric conversion coating.
2) back-illuminated cmos image sensors according to 1, which is characterized in that further include:
High-k dielectric layer, the high-k dielectric layer are formed between first insulating layer and the second insulating layer.
3) back-illuminated cmos image sensors according to 1, which is characterized in that further include:
Metal interconnecting layer, the metal interconnecting layer are located on the side far from the second surface of the first surface,
And first conduction region is connected to the source following transistor via the metal interconnecting layer.
4) back-illuminated cmos image sensors according to 1, which is characterized in that further include:
Transparent electrode, the transparent electrode are located in the upper and lower surface of the organic photoelectric conversion coating.
5) back-illuminated cmos image sensors according to 1, it is characterised in that:
First conduction region and second conduction region are formed using at least one of polysilicon or metal,
Wherein, first conduction region and second conduction region are to pass through chemical gaseous phase using polysilicon
It deposits CVD and is formed, and first conduction region and second conduction region are to pass through physics using metal
Vapor deposition PVD and formed.
6) back-illuminated cmos image sensors according to 1, which is characterized in that further include:
Multiple photoelectric conversion regions, the multiple photoelectric conversion region are arranged in the substrate and by first conduction region
It separates.
7) back-illuminated cmos image sensors according to 6, which is characterized in that further include:
Color filter array, the color filter array are covered by the organic photoelectric conversion coating and are located at second insulation
In layer, wherein each colour filter in the color filter array is accordingly covered on each in the multiple photoelectric conversion region
It is separated on photoelectric conversion region and by second conduction region.
8) back-illuminated cmos image sensors according to 7, it is characterised in that:
The color filter array includes one or more pairs of colour filters.
9) back-illuminated cmos image sensors according to 7, which is characterized in that further include:
The separate second surface of the organic photoelectric conversion coating is arranged in microlens array, the microlens array
Each lenticule on side, and in the microlens array is accordingly covered on each colour filter in the color filter array
On device.
10) back-illuminated cmos image sensors according to any one of 7-9, it is characterised in that:
The organic photoelectric conversion coating absorb red R, green G, indigo plant tri- kinds of colors of B light in any one.
11) back-illuminated cmos image sensors according to 10, it is characterised in that:
Each colour filter in the color filter array allow red R, green G, in indigo plant tri- kinds of colors of B, with organic light
A kind of light of the different color of the color for the light that electrotransformation layer is absorbed passes through, and adjacent colour filter allow by light
Color is different.
12) a kind of method for manufacturing back-illuminated cmos image sensors, which is characterized in that the described method includes:
Substrate is provided, the substrate has first surface and the second surface opposite with first surface；
It is recessed inwardly to form the first opening from the first surface, be filled in first opening to form first
Conduction region；
Source following transistor is set in the substrate on the side far from the second surface of the first surface；
The first insulating layer and the second insulation are sequentially formed on the side far from the first surface of the second surface
Layer；
The second opening is formed in the second insulating layer, is filled in second opening to form the second conduction
Area；And
Organic photoelectric conversion layer is formed on the side far from the first surface of the second insulating layer；
Wherein, it connect first conduction region with the source following transistor, second conduction region has with described
The connection of machine photoelectric conversion layer, first conduction region, first insulating layer and second conduction region form capacitance type structure
To store the photo-generated carrier from the organic photoelectric conversion coating.
13) method according to 12, which is characterized in that further include:
High-k dielectric layer is formed between first insulating layer and the second insulating layer.
14) method according to 12, which is characterized in that further include:
Metal interconnecting layer is formed on the side far from the second surface of the first surface, so that described first leads
Electric area is connected to the source following transistor via the metal interconnecting layer.
15) method according to 12, which is characterized in that further include:
Transparent electrode is set in the upper and lower surface of the organic photoelectric conversion coating.
16) method according to 12, which is characterized in that further include:
First conduction region and second conduction region are formed using at least one of polysilicon or metal,
Wherein, first conduction region and described is formed by chemical vapor deposition CVD using polysilicon
Second conduction region, and first conduction region and described are formed by physical vapour deposition (PVD) PVD using metal
Two conduction regions.
17) method according to 12, it is characterised in that:
Multiple photoelectric conversion regions are set in the substrate, the multiple photoelectric conversion region by first conduction region every
It opens.
18) method according to 17, which is characterized in that further include:
Color filter array is set in the second insulating layer, and the color filter array is covered by the organic photoelectric conversion coating
Lid, wherein each colour filter in the color filter array is accordingly covered on each light in the multiple photoelectric conversion region
It is separated on electric transition zone and by second conduction region.
19) method according to 18, it is characterised in that:
The color filter array includes one or more pairs of colour filters.
20) method according to 18, which is characterized in that further include:
Microlens array is set on the side far from the second surface of the organic photoelectric conversion coating, it is described micro-
Each lenticule in lens array is accordingly covered on each colour filter in the color filter array.
21) method according to 18-20, which is characterized in that further include:
By the organic photoelectric conversion coating be configured to absorb red R, green G, indigo plant tri- kinds of colors of B light in any one.
22) method according to 21, which is characterized in that further include:
By each colour filter in the color filter array be constructed to allow for red R, green G, in indigo plant tri- kinds of colors of B and institute
The light for stating a kind of different color of color for the light that organic photoelectric conversion coating is absorbed passes through, and adjacent colour filter allows to lead to
The color for the light crossed is different.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of back-illuminated cmos image sensors characterized by comprising
Substrate, the substrate have first surface and the second surface opposite with first surface；
First conduction region, first conduction region, which is filled in, to be recessed inwardly in the first opening to be formed from the first surface；
One far from the second surface of the first surface is arranged in source following transistor, the source following transistor
In substrate on side；
First insulating layer, first insulating layer are formed on the side far from the first surface of the second surface；
Second insulating layer, the second insulating layer are formed on the side far from the first surface of first insulating layer；
Second conduction region, second conduction region are located in the second opening of the second insulating layer；And
Organic photoelectric conversion coating, the organic photoelectric conversion coating are formed in the separate first surface of the second insulating layer
On side,
Wherein, first conduction region is connect with the source following transistor, second conduction region and the organic photoelectric
Conversion coating connection, and first conduction region, first insulating layer and second conduction region formed capacitance type structure with
Store the photo-generated carrier from the organic photoelectric conversion coating.
2. back-illuminated cmos image sensors according to claim 1, which is characterized in that further include:
High-k dielectric layer, the high-k dielectric layer are formed between first insulating layer and the second insulating layer.
3. back-illuminated cmos image sensors according to claim 1, which is characterized in that further include:
Metal interconnecting layer, the metal interconnecting layer are located on the side far from the second surface of the first surface, and
First conduction region is connected to the source following transistor via the metal interconnecting layer.
4. back-illuminated cmos image sensors according to claim 1, which is characterized in that further include:
Transparent electrode, the transparent electrode are located in the upper and lower surface of the organic photoelectric conversion coating.
5. back-illuminated cmos image sensors according to claim 1, it is characterised in that:
First conduction region and second conduction region are formed using at least one of polysilicon or metal,
Wherein, first conduction region and second conduction region are to pass through chemical vapor deposition using polysilicon
CVD and formed, and first conduction region and second conduction region are to pass through physical vapor using metal
It deposits PVD and is formed.
6. back-illuminated cmos image sensors according to claim 1, which is characterized in that further include:
Multiple photoelectric conversion regions, the setting of the multiple photoelectric conversion region in the substrate and by first conduction region every
It opens.
7. back-illuminated cmos image sensors according to claim 6, which is characterized in that further include:
Color filter array, the color filter array are covered by the organic photoelectric conversion coating and are located at the second insulating layer
In, wherein each colour filter in the color filter array is accordingly covered on each light in the multiple photoelectric conversion region
It is separated on electric transition zone and by second conduction region.
8. back-illuminated cmos image sensors according to claim 7, it is characterised in that:
The color filter array includes one or more pairs of colour filters.
9. back-illuminated cmos image sensors according to claim 7, which is characterized in that further include:
The side far from the second surface of the organic photoelectric conversion coating is arranged in microlens array, the microlens array
On, and each lenticule in the microlens array is accordingly covered on each colour filter in the color filter array
On.
10. the back-illuminated cmos image sensors according to any one of claim 7-9, it is characterised in that:
The organic photoelectric conversion coating absorb red R, green G, indigo plant tri- kinds of colors of B light in any one.
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Application publication date: 20181225 |