CN109075206A - Semiconductor device and display device including the semiconductor device - Google Patents

Semiconductor device and display device including the semiconductor device Download PDF

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Publication number
CN109075206A
CN109075206A CN201780022620.7A CN201780022620A CN109075206A CN 109075206 A CN109075206 A CN 109075206A CN 201780022620 A CN201780022620 A CN 201780022620A CN 109075206 A CN109075206 A CN 109075206A
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oxide semiconductor
film
semiconductor film
transistor
addition
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CN201780022620.7A
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CN109075206B (en
Inventor
山崎舜平
冈崎健
冈崎健一
黑崎大辅
中泽安孝
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)

Abstract

Improve the field-effect mobility and reliability with the transistor of oxide semiconductor film.A kind of semiconductor device, comprising: oxide semiconductor film；Gate electrode；Insulating film on gate electrode；Above-mentioned oxide semiconductor film on insulating film；And a pair of electrodes on oxide semiconductor film, wherein, oxide semiconductor film includes the second oxide semiconductor film on the first oxide semiconductor film and the first oxide semiconductor film, first oxide semiconductor film and the second oxide semiconductor film include identical element, also, the region that there is the first oxide semiconductor film its crystallinity to be lower than the second oxide semiconductor film.

Description

Semiconductor device and display device including the semiconductor device
Technical field
One embodiment of the present invention relates to a kind of semiconductor devices with oxide semiconductor film.In addition, this hair A bright embodiment is related to a kind of display device including above-mentioned semiconductor device.
Note that an embodiment of the invention is not limited to above-mentioned technical field.The disclosed inventions such as this specification The technical field of an embodiment be related to a kind of object, method or manufacturing method.In addition, an embodiment of the invention It is related to a kind of process, machine, product or composition.An embodiment of the invention more particularly to a kind of semiconductor device are shown Showing device, light emitting device, electrical storage device, storage device, its driving method or its manufacturing method.
In this specification etc, semiconductor device refers to all devices that can be worked and using characteristic of semiconductor. Other than the semiconductor elements such as transistor, semiconductor circuit, arithmetic unit or storage device are also the implementation of semiconductor device Mode.Photographic device, display device, liquid crystal display device, light emitting device, electro-optical device, power generator (including thin film solar Battery or organic thin film solar cell etc.) and electronic equipment may include semiconductor device.
Background technique
As the semiconductor material that can be used for transistor, oxide semiconductor is attracted attention.For example, 1 disclosure of patent document Following semiconductor device: multiple oxide semiconductor layers are laminated with, in multiple oxide semiconductor layer, it are used as channel Oxide semiconductor layer include indium and gallium, and keep the ratio of indium higher than the ratio of gallium, and field-effect mobility is (sometimes, simple Referred to as mobility or μ FE) semiconductor device that is improved.
In addition, non-patent literature 1 discloses the following contents: the oxide semiconductor comprising indium, gallium and zinc has with In1- xGa1+xO3(ZnO)mThe homologue that (- 1≤x≤1, m are natural number) indicates.In addition, non-patent literature 1 discloses consolidating for homologue Molten region.For example, the solid solution region of the homologue in the case where m=1 is in the range of x is -0.33 to 0.08, and m=2 In the case of homologue solid solution region x be -0.68 to 0.32 in the range of.
[bibliography]
[patent document]
[patent document 1] Japanese patent application discloses 2014-007399 bulletin
[non-patent literature]
[non-patent literature 1] M.Nakamura, N.Kimizuka, and T.Mohri, " The Phase Relations in the In2O3-Ga2ZnO41350 DEG C of-ZnO System at ", J.Solid State Chem., 1991, Vol.93, pp.298-315
Summary of the invention
Oxide semiconductor film is used for the field-effect mobility of the transistor of channel region, and the higher the better.However, just like Lower problem: when the field-effect mobility of transistor is improved, the characteristic of transistor is easy have normally open characteristic.Note that " normally open " refers to channel not applying voltage to gate electrode, and electric current flows through the state of transistor.
In addition, being formed in oxide semiconductor film in the transistor that oxide semiconductor film is used for channel region Lacking oxygen transistor characteristic is adversely affected.For example, the Lacking oxygen being formed in oxide semiconductor film is bonded with hydrogen To become carrier source of supply.When being formed with carrier source of supply in oxide semiconductor film, generating has oxide half The electrical variation of the transistor of electrically conductive film, it is typical that generate the drift of threshold voltage.
For example, the threshold voltage of transistor drifts about to negative direction when the Lacking oxygen amount in oxide semiconductor film is excessive And transistor has normally open characteristic.Therefore, in oxide semiconductor film, especially on channel region, Lacking oxygen amount is excellent Choosing is few or Lacking oxygen amount is preferably few that transistor is not made to have normally open characteristic.
In view of the above problems, the first purpose of an embodiment of the invention is to improve to have oxide semiconductor film The field-effect mobility and reliability of transistor.In addition, the first purpose of an embodiment of the invention is to inhibit have oxygen The electrical variation of the transistor of compound semiconductor film and the reliability for improving the transistor.In addition, of the invention one is implemented The first purpose of mode is to provide a kind of semiconductor device that power consumption is reduced.In addition, an embodiment of the invention The first purpose is to provide a kind of novel semiconductor device.In addition, the first purpose of an embodiment of the invention is to provide A kind of novel display device.
Note that the record of above-mentioned purpose does not interfere the presence of other purposes.An embodiment of the invention does not need Realize all above-mentioned purposes.Purpose other than above-mentioned purpose appears to be apparent from the record of specification etc. and can derive 's.
First embodiment of the invention is a kind of semiconductor device with oxide semiconductor film, the semiconductor device It include: gate electrode；Insulating film on gate electrode；Oxide semiconductor film on insulating film；And on oxide semiconductor film A pair of electrodes, wherein oxide semiconductor film includes on the first oxide semiconductor film and the first oxide semiconductor film Dioxide semiconductor film, the first oxide semiconductor film and the second oxide semiconductor film include identical element, also, the The region that there is monoxide semiconductor film its crystallinity to be lower than the second oxide semiconductor film.
In the above-described first embodiment, it is preferred that the first oxide semiconductor film and the second oxide semiconductor film It separately include In, M (M Al, Ga, Y or Sn) and Zn.
In addition, in the above-described first embodiment, it is preferred that in the case where the atomic ratio of In is 4, for In, M and The atomic ratio of the M of the summation of Zn be 1.5 or more and 2.5 hereinafter, and in the case where the atomic ratio of In is 4, for In, M and The atomic ratio of the Zn of the summation of Zn is 2 or more and 4 or less.In addition, in the above-described embodiment, the atomic ratio of In, M and Zn are preferred Near In:M:Zn=4:2:3 or its.
In addition, in the above-described first embodiment, it is preferred that in the case where the atomic ratio of In is 5, for In, M and The atomic ratio of the M of the summation of Zn be 0.5 or more and 1.5 hereinafter, and in the case where the atomic ratio of In is 5, for In, M and The atomic ratio of the Zn of the summation of Zn is 5 or more and 7 or less.In addition, in the above-described embodiment, the atomic ratio of In, M and Zn are preferred Near In:M:Zn=5:1:6 or its.
In addition, second embodiment of the present invention is a kind of semiconductor device with oxide semiconductor film, this is partly led Body device includes: gate electrode；Insulating film on gate electrode；Oxide semiconductor film on insulating film；And oxide semiconductor A pair of electrodes on film, wherein oxide semiconductor film includes the first oxide semiconductor film and the first oxide semiconductor film On the second oxide semiconductor film, the first oxide semiconductor film and the second oxide semiconductor film include identical element, The electron affinity of first oxide semiconductor film is greater than the second oxide semiconductor film, the electronics of the first oxide semiconductor film The difference of the electron affinity of affinity and the second oxide semiconductor film is 0.15eV or more and 2.0eV is hereinafter, also, the first oxygen The region that there is compound semiconductor film its crystallinity to be lower than the second oxide semiconductor film.
In addition, third embodiment of the present invention is a kind of semiconductor device with oxide semiconductor film, this is partly led Body device includes: gate electrode；Insulating film on gate electrode；Oxide semiconductor film on insulating film；And oxide semiconductor A pair of electrodes on film, wherein oxide semiconductor film includes the first oxide semiconductor film and the first oxide semiconductor film On the second oxide semiconductor film, the first oxide semiconductor film and the second oxide semiconductor film separately include In, M (M Al, Ga, Y or Sn) and Zn, the atomic ratio of the In for Zn in the first oxide semiconductor film are greater than the second oxidation The atomic ratio of the In for Zn in object semiconductor film, also, there is the first oxide semiconductor film its crystallinity to be lower than second The region of oxide semiconductor film.
In above-mentioned second embodiment and third embodiment, it is preferred that the first oxide semiconductor film and second Oxide semiconductor film separately includes In, M (M Al, Ga, Y or Sn) and Zn.
In above-mentioned second embodiment and third embodiment, it is preferred that in the case where the atomic ratio of In is 4, The atomic ratio of the M of the summation for In, M and Zn in first oxide semiconductor film be 1.5 or more and 2.5 hereinafter, and In the case that the atomic ratio of In is 4, the atomic ratio for the Zn of the summation of In, M and Zn is 2 or more and 4 or less.In addition, In the above-described embodiment, the atomic ratio of the In, the M and the Zn be preferably In:M:Zn=4:2:3 or its near.This Outside, it is preferred that the summation for In, M and Zn in the case where the atomic ratio of In is 1, in the second oxide semiconductor film M atomic ratio be 0.5 or more and 1.5 hereinafter, and in the case where the atomic ratio of In is 1, for the summation of In, M and Zn The Zn atomic ratio be 0.1 or more and 2 or less.In addition, in the above-described embodiment, the atomic ratio of In, M and Zn are preferably In:M:Zn=1:1:1 or its near.
In addition, in above-mentioned second embodiment and third embodiment, it is preferred that the feelings for being 4 in the atomic ratio of In Under condition, the atomic ratio of the M of the summation for In, M and Zn in the first oxide semiconductor film is 1.5 or more and 2.5 hereinafter, simultaneously And in the case where the atomic ratio of In is 4, the atomic ratio for the Zn of the summation of In, M and Zn is 2 or more and 4 or less.This Outside, in the above-described embodiment, the atomic ratio of the In, the M and the Zn be preferably In:M:Zn=4:2:3 or its near. Moreover it is preferred that in the case where the atomic ratio of In is 5, in the second oxide semiconductor film for the total of In, M and Zn The atomic ratio of the M of sum be 0.5 or more and 1.5 hereinafter, and in the case where the atomic ratio of In is 5, for the total of In, M and Zn The atomic ratio of the Zn of sum is 5 or more and 7 or less.In addition, in the above-described embodiment, the atomic ratio of In, M and Zn are preferably In:M:Zn=5:1:6 or its near.
In addition, in above-mentioned first embodiment into third embodiment, it is preferred that the first oxide semiconductor film packet Containing the composite oxide semiconductor including first area and second area, first area includes with appointing in indium, zinc and oxygen One or more multiple first clusters as main component, second area include with selected from indium, M (M Al, Ga, Y or Sn), zinc and Any one or more multiple second clusters as main component in oxygen, multiple first clusters are connected to each other, and multiple second clusters connect each other It connects.
In above-mentioned first embodiment into third embodiment, it is preferred that the second oxide semiconductor film includes knot Brilliant portion, the crystallization unit have c-axis orientation.
Other embodiment of the invention are a kind of display devices, which includes appointing in above embodiment Semiconductor device and display element described in one.Other embodiment of the invention are a kind of display modules, this is aobvious Show that module includes the display device and touch sensor.Other embodiment of the invention are a kind of electronic equipment, should Electronic equipment includes semiconductor device described in any of aforesaid way, display device or display module and operation key or electricity Pond.
An embodiment through the invention, the field-effect that the transistor with oxide semiconductor film can be improved are moved Shifting rate and reliability.In addition, an embodiment through the invention, can inhibit the transistor with oxide semiconductor film Electrical variation and improve the reliability of the transistor.In addition, an embodiment through the invention, can provide one kind The semiconductor device that power consumption is reduced.In addition, an embodiment through the invention, a kind of novel partly lead can be provided Body device.In addition, an embodiment through the invention, can provide a kind of novel display device.
Note that the record of said effect does not interfere the presence of other effects.An embodiment of the invention does not need Realize all said effect.In addition, effect other than the above appears to be aobvious from the record of specification, attached drawing, claims etc. And it is clear to and can derive.
Detailed description of the invention
Figure 1A to Fig. 1 C is the top view and sectional view for showing semiconductor device.
Fig. 2A to Fig. 2 C is the top view and sectional view for showing semiconductor device.
Fig. 3 A to Fig. 3 C is the top view and sectional view for showing semiconductor device.
Fig. 4 A to Fig. 4 C is the top view and sectional view for showing semiconductor device.
Fig. 5 A to Fig. 5 C is the top view and sectional view for showing semiconductor device.
Fig. 6 A to Fig. 6 C is the top view and sectional view for showing semiconductor device.
Fig. 7 A to Fig. 7 C is the sectional view for showing the manufacturing method of semiconductor device.
Fig. 8 A to Fig. 8 C is the sectional view for showing the manufacturing method of semiconductor device.
Fig. 9 A to Fig. 9 C is the sectional view for showing the manufacturing method of semiconductor device.
Figure 10 A to Figure 10 C is the sectional view for showing the manufacturing method of semiconductor device.
Figure 11 A and Figure 11 B are the schematic diagrames for showing the diffusion path of the oxygen or excess oxygen that are diffused into oxide semiconductor film.
Figure 12 A and Figure 12 B are the schematic top plan view and schematic cross-section for showing composite oxide semiconductor.
Figure 13 A and Figure 13 B are the schematic top plan view and schematic cross-section for showing composite oxide semiconductor.
Figure 14 A and Figure 14 B are the schematic top plan view and schematic cross-section for showing composite oxide semiconductor.
Figure 15 is the figure for showing the atomic ratio of composite oxide semiconductor.
Figure 16 A and Figure 16 B are the figures for showing sputtering equipment.
Figure 17 is the process flow chart for showing the manufacturing method of composite oxide semiconductor.
Figure 18 A to Figure 18 C is the figure for showing the section near target.
Figure 19 is the top view for showing an embodiment of display device.
Figure 20 is the sectional view for showing an embodiment of display device.
Figure 21 is the sectional view for showing an embodiment of display device.
Figure 22 is the sectional view for showing an embodiment of display device.
Figure 23 is the sectional view for showing an embodiment of display device.
Figure 24 is the sectional view for showing an embodiment of display device.
Figure 25 is the sectional view for showing an embodiment of display device.
Figure 26 A and Figure 26 B are the figures for showing the top surface and section of semiconductor device.
Figure 27 is the sectional view of semiconductor device.
Figure 28 is the figure for showing the structure example of display panel.
Figure 29 is the figure for showing the structure example of display panel.
Figure 30 A to Figure 30 C is the block diagram and circuit diagram for showing display device.
Figure 31 is the figure for showing display module.
Figure 32 A to Figure 32 E is the figure for showing electronic equipment.
Figure 33 A to Figure 33 G is the figure for showing electronic equipment.
Figure 34 A and Figure 34 B are the perspective views for showing display device.
Figure 35 A and Figure 35 B are the figures for showing the Id-Vg characteristic of transistor.
Figure 36 is the figure for showing the GBT test result of transistor.
Figure 37 A and Figure 37 B are the figures for showing the Id-Vg characteristic of transistor.
Figure 38 is the figure for showing the GBT test result of transistor.
Specific embodiment
In the following, being illustrated referring to attached drawing to embodiment.But person of an ordinary skill in the technical field can be very It will be readily understood that a fact, be exactly that embodiment can be implemented in many different forms, mode and detailed content can be with It is transformed to various forms without deviating from the purpose and scope of the present invention.Therefore, the present invention should not It is interpreted only to limit in content in the content described in following embodiment.
In the accompanying drawings, size, the thickness of layer or region are indicated to exaggerate sometimes convenient for clearly demonstrating.Therefore, of the invention Embodiment be not necessarily limited to above-mentioned size.In addition, in the accompanying drawings, it is schematically shown ideal example, therefore this The embodiment of invention is not limited to shape shown in the drawings or numerical value etc..
The ordinal numbers such as " first ", " second " used in this specification, " third " are obscuring in order to avoid constituent element And it is additional, rather than in order to be defined in terms of the number.
In the present specification, for convenience, the word for having used the expressions such as "upper", " top ", "lower", " lower section " to configure Sentence, to be described with reference to the positional relationship of constituent element.In addition, the positional relationship of constituent element is according to description each component Direction suitably change.Therefore, positional relationship is not limited to the words and phrases illustrated in this specification, can be according to circumstances appropriate Ground is using other words and phrases to illustrate positional relationship.
In this specification etc, transistor refers to the element including at least grid, drain electrode and source electrode these three terminals.It is brilliant Body pipe has ditch between drain electrode (drain terminal, drain region or drain electrode) and source electrode (source terminal, source region or source electrode) Road region, and electric current can be flowed through between drain electrode and source electrode by channel region.Note that in this specification etc, channel region Domain refers to the region that electric current flows mainly through.
In addition, the case where current direction using polarity different transistor the case where or in circuit work changes etc. Under, the function of source electrode and drain electrode is mutually exchanged sometimes.Therefore, in this specification etc, " source electrode " and the words and phrases of " drain electrode " can be with Mutually exchange.
In this specification etc, " electrical connection " is included the case where through " element with certain electro ultrafiltration " connection.Here, " element with certain electro ultrafiltration " does not limit it particularly as long as the electric signal that can be attached between object awards receipts System.For example, " element with certain electro ultrafiltration " not only includes electrode and wiring, but also the switch including transistor etc. is first Part, resistive element, inductor, capacitor, other elements with various functions etc..
In this specification etc, " parallel " refers to that the angle that two straight lines are formed is -10 ° or more and 10 ° of states below. Therefore, also include the angle be -5 ° or more and 5 ° of states below.In addition, the angle that " vertical " refers to that two straight lines are formed is 80 ° or more and 100 ° of states below.It therefore also include the state of 85 ° or more and 95 ° angles below.
In addition, in this specification etc, the words and phrases of " film " and " layer " can mutually be exchanged.For example, " can will lead sometimes Electric layer " is referred to as " conductive film ".In addition, for example, " insulating film " can be referred to as " insulating layer " sometimes.
In this specification etc, in the case where no particularly explanation, off-state current refers to that transistor is in and closes shape The drain current of state (also referred to as nonconducting state, blocking state).In the case where no particularly explanation, in n-channel crystal Guan Zhong, closed state is state of the voltage Vgs between finger grid and source electrode lower than threshold voltage vt h, in p-channel transistor, Closed state is state of the voltage Vgs between finger grid and source electrode higher than threshold voltage vt h.For example, the OFF state of n-channel transistor Electric current is sometimes referred to drain current of the voltage Vgs between grid and source electrode lower than threshold voltage vt h when.
The off-state current of transistor sometimes depends on Vgs.Therefore, " off-state current of transistor is I or less " is sometimes referred to In the presence of make transistor off-state current become I Vgs below.The off-state current of transistor is sometimes referred to: when Vgs is scheduled value When closed state under off-state current；The off-state current under closed state when Vgs is the value in predetermined range；Or The off-state current etc. under closed state when Vgs, which is, can obtain the value of substantially low off-state current.
As an example, it is contemplated that a kind of n-channel transistor, the threshold voltage vt h of the n-channel transistor are 0.5V, Vgs Drain current when for 0.5V is 1 × 10-9Drain current when A, Vgs are 0.1V is 1 × 10-13Leakage when A, Vgs are -0.5V Electrode current is 1 × 10-19Drain current when A, Vgs are -0.8V is 1 × 10-22A.When Vgs is -0.5V or Vgs be - In the range of 0.8V to -0.5V, the drain current of the transistor is 1 × 10-19A is hereinafter, so OFF state of the sometimes referred to as transistor Electric current is 1 × 10-19A or less.The drain current of the transistor is set to become 1 × 10 due to existing-22A Vgs below, therefore sometimes The off-state current of the transistor is referred to as 1 × 10-22A or less.
In this specification etc, the pass of the transistor with channel width W is indicated with the current value of every channel width W sometimes State electric current.In addition, indicating the transistor with channel width W sometimes with the current value of every scheduled channel width (such as 1 μm) Off-state current.When for the latter, off-state current is indicated sometimes with the unit (for example, A/ μm) with electric current/length dimension.
The off-state current of transistor sometimes depends on temperature.In the present specification, in the case where no particularly explanation, Off-state current indicates the off-state current at room temperature, 60 DEG C, 85 DEG C, 95 DEG C or 125 DEG C sometimes.Alternatively, indicating guaranteeing sometimes It at a temperature of the reliability of semiconductor device including the transistor etc. or is including the quilts such as the semiconductor device of the transistor Off-state current at the temperature (for example, temperature in the range of 5 DEG C to 35 DEG C) used." off-state current of transistor be I with Under " be sometimes referred in room temperature, 60 DEG C, 85 DEG C, 95 DEG C, 125 DEG C, guarantee include the reliability of the semiconductor device of the transistor At a temperature of or including the temperature that is used such as semiconductor device of the transistor (for example, in the range of at 5 DEG C to 35 DEG C Temperature) under exist make transistor off-state current become I Vgs below.
The off-state current of transistor sometimes depends on the voltage Vds between drain electrode and source electrode.In the present specification, in no spy In the case where other explanation, off-state current indicate sometimes Vds be 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, Off-state current when 10V, 12V, 16V or 20V.Alternatively, indicate to guarantee sometimes include the transistor semiconductor device etc. can Off-state current when by the Vds of property or when Vds used in the semiconductor device including the transistor etc.." the pass of transistor State electric current is I or less " be sometimes referred to: Vds be 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, Vds or the semiconductor device including the transistor that 16V, 20V, guarantee include the reliability of the semiconductor device of the transistor etc. Existing under the Vds used makes the off-state current of transistor become I Vgs below.
In the explanation of above-mentioned off-state current, drain electrode can be referred to as source electrode.That is, off-state current is sometimes referred to as crystalline substance Body pipe flows through the electric current of source electrode when being in close state.
In this specification etc, off-state current is denoted as leakage current sometimes.In this specification etc, off-state current is for example Sometimes referred to as electric current of the stream between source electrode and drain electrode when transistor is in close state.
In this specification etc, the threshold voltage of transistor refers to grid voltage when forming channel in the transistor (Vg).Specifically, the threshold voltage of transistor is sometimes referred to: indicating grid voltage (Vg) with horizontal axis and indicating leakage with the longitudinal axis The square root of electrode current (Id), and in the curve (Vg- √ Id characteristic) marked and drawn, in the tangent line extrapolation that will have maximum inclination When straight line and drain current (Id) square root be 0 (Id 0A) at crosspoint grid voltage (Vg).Alternatively, transistor Threshold voltage be sometimes referred to be channel length and using W as channel width using L, Id [A] × L [μm]/W [μm] value is 1 × 10-9Grid voltage (Vg) when [A].
In this specification etc, such as when electric conductivity is substantially low, even if also having when being expressed as " semiconductor " sometimes The characteristic of " insulator ".In addition, the indefinite border Chu of " semiconductor " and " insulator ", therefore cannot accurately distinguish sometimes.By This, can be referred to as " insulator " for " semiconductor " documented by this specification etc. sometimes.Similarly, this can be illustrated sometimes " insulator " documented by book etc. is referred to as " semiconductor ".Alternatively, sometimes can be by " insulator " documented by this specification etc. It is referred to as " semi-insulator ".
In this specification etc, such as when electric conductivity is sufficiently high, even if also having when being expressed as " semiconductor " sometimes The characteristic of " electric conductor ".In addition, the indefinite border Chu of " semiconductor " and " electric conductor ", therefore cannot accurately distinguish sometimes.By This, can be referred to as " electric conductor " for " semiconductor " documented by this specification etc. sometimes.Similarly, this can be illustrated sometimes " electric conductor " documented by book etc. is referred to as " semiconductor ".
In this specification etc, the impurity of semiconductor refers to the element outside the main components for constituting semiconductor film.For example, Element of the concentration lower than 0.1atomic% is impurity.When comprising impurity, for example, it is possible to form DOS (state in the semiconductors Density), carrier mobility is likely to decrease or crystallinity is likely to decrease.When semiconductor includes oxide semiconductor, make For the impurity for changing characteristic of semiconductor, such as there are the 1st race's element, the 2nd race's element, the 13rd race's element, the 14th race's element, the 15th race Element or transition metal outside the main components etc. especially have hydrogen (being contained in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen Deng.In the case where being oxide semiconductor, lead to the generation of Lacking oxygen such as being mixed into for the impurity as hydrogen sometimes.In addition, When semiconductor includes silicon, as the impurity for changing characteristic of semiconductor, such as aerobic, the 1st race's element except dehydrogenation, the 2nd race Element, the 13rd race's element, the 15th race's element etc..
(embodiment 1)
In the present embodiment, A to Figure 11 B illustrates the semiconductor device and half of an embodiment of the invention referring to Fig.1 The manufacturing method of conductor device.
<configuration example 1 of 1-1. semiconductor device>
Figure 1A is the top view of the transistor 100 of the semiconductor device as an embodiment of the invention, and Figure 1B is equivalent to Along the sectional view of chain-dotted line X1-X2 shown in figure 1A, Fig. 1 C is equivalent to the section along chain-dotted line Y1-Y2 shown in figure 1A Figure.Note that in figure 1A, for convenience's sake, a part for omitting the constituent element of transistor 100 (is used as gate insulator The insulating film etc. of film) and illustrated.In addition, the direction chain-dotted line X1-X2 is known as orientation sometimes, by chain-dotted line The direction Y1-Y2 is known as channel width dimension.Note that also being omitted in the same manner as Figure 1A in the top view of the transistor below sometimes A part of constituent element.
Transistor 100 includes: the conductive film 104 on substrate 102；Insulating film 106 on substrate 102 and conductive film 104；Absolutely Oxide semiconductor film 108 on velum 106；Conductive film 112a on oxide semiconductor film 108；And oxide semiconductor Conductive film 112b on film 108.In addition, on transistor 100, specifically, in oxide semiconductor film 108, conductive film Insulating film 114, the insulation on insulating film 116 and insulating film 116 on insulating film 114 are formed on 112a and conductive film 112b Film 118.
In addition, transistor 100 is so-called channel etch type transistor.
In addition, oxide semiconductor film 108 includes: the oxide semiconductor film 108_1 on insulating film 106；And oxidation Oxide semiconductor film 108_2 on object semiconductor film 108_1.In addition, oxide semiconductor film 108_1 and oxide semiconductor Film 108_2 includes identical element.For example, oxide semiconductor film 108_1 and oxide semiconductor film 108_2 are preferably only respectively It on the spot include In, M (M Al, Ga, Y or Sn) and Zn.
In addition, oxide semiconductor film 108_1 and oxide semiconductor film 108_2 preferably separately include the original of In The region of atom ratio of the sub- ratio greater than M.As an example, preferably by In, M and Zn of oxide semiconductor film 108_1 Atomic ratio be set as In:M:Zn=4:2:3 or its near.Furthermore it is preferred that by In, M and Zn of oxide semiconductor film 108_2 Atomic ratio be set as In:M:Zn=4:2:3 or its near.Here, " near " include: when In be 4 when, M be 1.5 or more and 2.5 hereinafter, and Zn be 2 or more and 4 or less situation.In this way, working as oxide semiconductor film 108_1 and oxide semiconductor film When the composition of 108_2 is roughly the same, identical sputtering target material can be used, it is possible to inhibit manufacturing cost.In addition, using In the case where identical sputtering target material, can be continuously formed in same vacuum processing chamber oxide semiconductor film 108_1 and Oxide semiconductor film 108_2, it is possible to impurity be inhibited to be mixed into oxide semiconductor film 108_1 and oxide semiconductor film The interface of 108_2.
By making oxide semiconductor film 108_1 and oxide semiconductor film 108_2 separately includes the original of its In The region of atom ratio of the sub- ratio greater than M, can be improved the field-effect mobility of transistor 100.Specifically, transistor 100 field-effect mobility can be more than 50cm2/ Vs, it is preferred that the field-effect mobility of transistor 100 can be more than 100cm2/Vs。
For example, by the gate drivers that the high transistor of above-mentioned field-effect mobility is used to generate grid signal, it can To provide a kind of display device of narrow frame.In addition, by the way that the high transistor of above-mentioned field-effect mobility is used for display device Signal of the included supply from signal wire source electrode driver (especially, with shift LD included by source electrode driver The demultiplexer of the output terminal connection of device), a kind of display device that the cloth line number connecting with display device is less can be provided.
On the other hand, even if oxide semiconductor film 108_1 and oxide semiconductor film 108_2 separately include In Atom ratio greater than M atom ratio region, oxide semiconductor film 108_1's and oxide semiconductor film 108_2 In the case that crystallinity is high, field-effect mobility also declines sometimes.
But in the semiconductor device of an embodiment of the invention, oxide semiconductor film 108_1 includes its knot Crystalline substance is lower than the region of oxide semiconductor film 108_2.In addition, the crystallinity of oxide semiconductor film 108 can for example pass through X X ray diffraction (XRD) or transmission electron microscope (TEM) are determined.
In the case where oxide semiconductor film 108_1 includes the low region of crystallinity, following excellent effect is played.
Firstly, being illustrated to the Lacking oxygen being likely to form in oxide semiconductor film 108.
In addition, the Lacking oxygen being formed in oxide semiconductor film 108 adversely affects transistor characteristic and causes Problem.For example, the Lacking oxygen being formed in oxide semiconductor film 108 is bonded with hydrogen, and become carrier source of supply.It generates Carrier source of supply in oxide semiconductor film 108 make include the transistor 100 of oxide semiconductor film 108 electrical characteristics hair It changes dynamic, typically makes threshold voltage shift.Therefore, in oxide semiconductor film 108, the fewer Lacking oxygen the better.
Then, in an embodiment of the invention, the insulating film near oxide semiconductor film 108, specifically For, the insulating film 114,116 for being formed in 108 top of oxide semiconductor film includes excess oxygen.By make oxygen or excess oxygen from Insulating film 114,116 is moved to oxide semiconductor film 108, can reduce the Lacking oxygen in oxide semiconductor film.
Here, referring to Fig.1 1A and Figure 11 B to the path of the oxygen or excess oxygen that are diffused into oxide semiconductor film 108 into Row explanation.Figure 11 A and Figure 11 B are to indicate that the diffusion path of the oxygen or excess oxygen that are diffused into oxide semiconductor film 108 is shown It is intended to, Figure 11 A is the schematic diagram in orientation, and Figure 11 B is the schematic diagram in channel width dimension.
The oxygen or excess oxygen that insulating film 114,116 is included are spread from top by oxide semiconductor film 108_2 Into oxide semiconductor film 108_1 (Route 1 shown in Figure 11 A and Figure 11 B).
Alternatively, oxygen or excess oxygen that insulating film 114,116 is included partly are led from oxide semiconductor film 108_1 and oxide Each side diffusion of body film 108_2 (Route 2 shown in Figure 11 B) into oxide semiconductor film 108.
For example, in the Route 1 shown in Figure 11 A and Figure 11 B, when the crystallinity of oxide semiconductor film 108_2 is high, Sometimes the diffusion of oxygen or excess oxygen is interfered.It on the other hand, can be by oxygen or excess oxygen from oxygen in the Route 2 shown in Figure 11 B Each side diffusion of compound semiconductor film 108_1 and oxide semiconductor film 108_2 is to oxide semiconductor film 108_1 and oxygen In compound semiconductor film 108_2.
In addition, oxide semiconductor film 108_1 includes the region that its crystallinity is lower than oxide semiconductor film 108_2, it should Region becomes the diffusion path of excess oxygen, it is possible to which excess oxygen is diffused into its crystallinity by Route 2 shown in Figure 11 B In oxide semiconductor film 108_2 higher than oxide semiconductor film 108_1.In addition, although Figure 11 A and Figure 11 B are not shown, It is in the case where insulating film 106 includes oxygen or excess oxygen, oxygen or excess oxygen are possible to be also diffuse into oxide from insulating film 106 In semiconductor film 108.
In this way, in the semiconductor device of an embodiment of the invention, using the different oxide of crystalline texture half The low region of crystallinity is used as the diffusion path of excess oxygen, it is possible thereby to provide a kind of reliability by the laminated construction of electrically conductive film High semiconductor device.
In addition, in the case where only using the low oxide semiconductor film of crystallinity and constituting oxide semiconductor film 108, it is miscellaneous Matter (for example, hydrogen or moisture etc.) is attached to or is mixed into back channel side, that is, the area of oxide semiconductor film 108_2 In domain, the decline of reliability is occasionally resulted in.
The impurity such as the hydrogen or moisture being mixed into the channel region of oxide semiconductor film 108 cause to bear to transistor characteristic Face is rung, so becoming problem.Therefore, in oxide semiconductor film 108, the fewer the impurity such as hydrogen or moisture the better.
Then, in an embodiment of the invention, pass through the oxide half on the upper layer of raising oxide semiconductor film The crystallinity of electrically conductive film can inhibit the impurity that may be mixed into oxide semiconductor film 108.Especially, by improving oxygen The crystallinity of compound semiconductor film 108_2, can inhibit damage when processing to conductive film 112a, 112b.When to conduction When film 112a, 112b are processed, the surface of oxide semiconductor film 108, i.e. the surface exposure of oxide semiconductor film 108_2 In etchant or etching gas.But because oxide semiconductor film 108_2 includes the high region of crystallinity, etching Patience is higher than the low oxide semiconductor film 108_1 of crystallinity.Therefore, oxide semiconductor film 108_2 is used as etch stop Film.
By using the oxide semiconductor that impurity concentration is low and defect state density is low as oxide semiconductor film 108 Film can manufacture the transistor with excellent electrical characteristics, so being preferred.Here, impurity concentration is low and defect state is close The state for spending low (Lacking oxygen is few) is known as " high-purity is intrinsic " or " substantial high-purity is intrinsic ".As in oxide semiconductor film Impurity, can typically enumerate water, hydrogen etc..In this specification etc, it will reduce or remove in oxide semiconductor film sometimes Water and hydrogen processing be known as dehydrationization, dehydrogenation.In addition, sometimes will be to oxide semiconductor film or oxide insulating film addition The processing of oxygen is known as oxygenation, by oxygenation and will comprise more than the state of oxygen of stoichiometric composition sometimes and is known as peroxidating shape State.
Because the carrier occurring source for the oxide semiconductor film that high-purity is intrinsic or substantial high-purity is intrinsic is less, institute Carrier density can be reduced.Therefore, the transistor that channel region is formed in the oxide semiconductor film seldom has The electrical characteristics of negative threshold voltage (seldom there is normally open characteristic).Because of the oxidation that high-purity is intrinsic or substantial high-purity is intrinsic Object semiconductor film has lower defect state density, and it is possible to the lower trap density of states.High-purity is intrinsic or real The off-state current of the intrinsic oxide semiconductor film of high-purity is significantly small in matter, and even channel width is 1 × 106μm, channel Length L is 10 μm of element, when the voltage (drain voltage) of source electrode and electric leakage interpolar is in the range of 1V to 10V, off-state current Or the measuring limit of Semiconductor Parameter Analyzer is hereinafter, i.e. 1 × 10-13A or less.
In addition, in the region that there is oxide semiconductor film 108_1 its crystallinity to be lower than oxide semiconductor film 108_2 When, carrier density is improved sometimes.
In addition, fermi level is sometimes relative to oxide when the carrier density of oxide semiconductor film 108_1 is higher The conduction band of semiconductor film 108_1 is height.The conduction band bottom of oxide semiconductor film 108_1 is lower as a result, oxide semiconductor film The conduction band bottom of 108_1 and the energy difference for the trap level being possibly formed into gate insulating film (here, insulating film 106) have time-varying Greatly.When the energy difference becomes larger, the charge being captured in gate insulating film tails off, and can reduce the threshold value electricity of transistor sometimes Buckling is dynamic.In addition, oxide semiconductor can be improved when the carrier density of oxide semiconductor film 108_1 is improved The field-effect mobility of film 108.
In addition, oxide semiconductor film 108_1 is preferably composite oxide semiconductor.It is partly led about the composite oxides Body will be described in detail in embodiment 2.
In addition, insulating film 106 has the gate insulating film of transistor 100 in the transistor 100 shown in Figure 1A to Fig. 1 C Function, insulating film 114,116,118 has the function of the protection insulating film of transistor 100.In addition, being led in transistor 100 Electrolemma 104 has the function of that gate electrode, conductive film 112a have the function of source electrode, and conductive film 112b has the function of drain electrode Energy.Note that in this specification etc, insulating film 106 is known as the first insulating film sometimes, insulating film 114,116 is known as second Insulating film 118 is known as third insulating film by insulating film.
<constituent element of 1-2. semiconductor device>
Hereinafter, constituent element included by semiconductor device to present embodiment is described in detail.
[substrate]
Although the material etc. to substrate 102 is not particularly limited, at least it is required to bear subsequent heat treatment Heat resistance.For example, glass substrate, ceramic substrate, quartz substrate, Sapphire Substrate etc. can be used as substrate 102.In addition, It can also use using silicon or silicon carbide as the single crystal semiconductor substrate of material or poly semiconductor substrate, with SiGe etc. as material Compound semiconductor substrate, SOI substrate etc., and the above-mentioned substrate for being provided with semiconductor element can also be used as substrate 102. When as substrate 102 using glass substrate, by using the 6th generation (1500mm × 1850mm), the 7th generation (1870mm × 2200mm), eighth generation (2200mm × 2400mm), the 9th generation (2400mm × 2800mm), the tenth generation (2950mm × 3400mm) Deng extensive substrate, large-scale display device can be manufactured.
As substrate 102, flexible substrate also can be used, and directly form transistor 100 on flexible substrates.Or Peeling layer can also be arranged between substrate 102 and transistor 100 in person.Peeling layer can use in the case where there, that is, shell Part or all that semiconductor device is manufactured on absciss layer, then it is separated and be transposed to from substrate 102 on other substrates Situation.At this point, transistor 100 can also be transposed in the low substrate of heat resistance or flexible substrate.
[conductive film]
It is used as the conductive film 104 of gate electrode, be used as the conductive film 112a of source electrode and is used as the conductive film of drain electrode 112b can be used selected from chromium (Cr), copper (Cu), aluminium (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), the metallic element in cobalt (Co), using above-mentioned metallic element as the alloy of ingredient Or alloy of the above-mentioned metallic element of combination etc. is formed.
In addition, oxide (the In-Sn oxidation comprising indium and tin also can be used as conductive film 104,112a, 112b Object), the oxide (In-W oxide) comprising indium and tungsten, the oxide (In-W-Zn oxide) comprising indium, tungsten and zinc, include Indium and titanyl compound (In-Ti oxide), the oxide (In-Ti-Sn oxide) comprising indium, titanium and tin include indium and zinc Oxide (In-Zn oxide), oxide (In-Sn-Si oxide), the oxygen comprising indium, gallium and zinc comprising indium, tin and silicon Oxide conductors or the oxide semiconductors such as compound (In-Ga-Zn oxide).
Here, illustrating oxide conductor.In this specification etc, oxide conductor can also be known as OC.For example, Lacking oxygen is formed in oxide semiconductor, and hydrogen is added to the Lacking oxygen and is formed about donor level in conduction band.As a result, oxygen The electric conductivity of compound semiconductor increases, and becomes electric conductor.The oxide semiconductor for becoming electric conductor can be known as oxide Electric conductor.Generally, due to which the energy gap of oxide semiconductor is big, therefore there is translucency to visible light.On the other hand, it aoxidizes Object electric conductor is the oxide semiconductor near conduction band with donor level.Therefore, in oxide conductor, due to applying The influence of the absorption of main energy level is small, and has the translucency roughly the same with oxide semiconductor to visible light.
In addition, as conductive film 104,112a, 112b, can also using Cu-X alloy film (X Mn, Ni, Cr, Fe, Co, Mo, Ta or Ti).By using Cu-X alloy film, can be processed with wet etching process, so as to inhibit manufacturing cost.
In addition, conductive film 112a, 112b particularly preferably include one in copper, titanium, tungsten, tantalum and molybdenum in above-mentioned metallic element It is a or multiple.Especially, as conductive film 112a, 112b, it is preferable to use nitridation tantalum film.The nitridation tantalum film is conductive and has There is the high barrier to copper or hydrogen.In addition, because few from the hydrogen that discharges of nitridation tantalum film itself, it is possible to as with oxide half The conductive film near conductive film or oxide semiconductor film 108 that electrically conductive film 108 contacts is most suitably using nitridation tantalum film.This Outside, when using copper film as conductive film 112a, 112b, the resistance of conductive film 112a, 112b can be reduced, so being preferred 's.
Conductive film 112a, 112b can be formed by electroless plating method.As the material that can be deposited by the electroless plating method, example It such as can be used selected from one or more of Cu, Ni, Al, Au, Sn, Co, Ag and Pd.Especially since using Cu or Ag When, the resistance of conductive film can be reduced, so being preferred.
[insulating film for being used as gate insulating film]
It, can be heavy by plasma enhanced chemical vapor as the insulating film 106 for the gate insulating film for being used as transistor 100 Product (PECVD) method, the formation such as sputtering method include silicon oxide film, silicon oxynitride film, silicon oxynitride film, silicon nitride film, pellumina, Hafnium oxide film, yittrium oxide film, zirconium oxide film, gallium oxide film, tantalum-oxide film, magnesium oxide films, lanthana film, cerium oxide and oxidation The insulating layer of at least one of neodymium film.Note that insulating film 106 also can have the lamination knot of laminated construction or three layers or more Structure.
Moreover it is preferred that being contacted with the oxide semiconductor film 108 for the channel region for being used as transistor 100 exhausted Velum 106 is oxide insulating film, which has region (the excess oxygen area for the oxygen for comprising more than stoichiometric composition Domain).In other words, insulating film 106 can discharge oxygen.For the formation excess oxygen region in insulating film 106, such as can be using such as Lower method: insulating film 106 is formed under oxygen atmosphere；Or the insulating film 106 after deposition is carried out at heating under oxygen atmosphere Reason.
In addition, playing following effect when insulating film 106 is using hafnium oxide.The dielectric constant of hafnium oxide is than silica or oxygen Silicon nitride is high.Therefore, by using hafnium oxide, compared with the case where using silica, the thickness of insulating film 106 can be made to become Greatly, thus, it is possible to reduce leakage current caused by tunnel current.I.e., it is possible to realize the small transistor of off-state current.Furthermore with Hafnium oxide with non crystalline structure is compared, and the hafnium oxide with crystalline texture has high dielectric constant.Therefore, in order to form OFF state The small transistor of electric current is, it is preferable to use the hafnium oxide with crystalline texture.As the example of crystalline texture, monoclinic crystal can be enumerated System or cubic system etc..Note that an embodiment of the invention is not limited to this.
Note that in the present embodiment, forming the stack membrane of silicon nitride film and silicon oxide film as insulating film 106.With oxygen SiClx film is compared, thickness required for higher and equal with the silicon oxide film in order to obtain static capacity of the dielectric constant of silicon nitride film It spends larger, therefore, by making the gate insulating film of transistor 100 include silicon nitride film, the thickness of insulating film can be increased.Cause This, can inhibit the electrostatic of transistor 100 broken by inhibiting the decline of the insulation pressure resistance of transistor 100 and improving insulation pressure resistance It is bad.
[oxide semiconductor film]
Above-mentioned material can be used as oxide semiconductor film 108.
When oxide semiconductor film 108 includes In-M-Zn oxide, for forming the sputtering target of In-M-Zn oxide The atomic ratio of the metallic element of material preferably satisfies In > M.The atomic ratio of metallic element as this sputtering target material can be enumerated In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, In:M:Zn=5:2:5 etc..
In addition, including in oxide semiconductor film 108_2 in above-mentioned<structure example 2 of 1-1-2. semiconductor device> In the case where In-M-Zn oxide, for formed In-M-Zn oxide sputtering target material metallic element atomic ratio it is preferably full Sufficient In≤M or Zn≤M.The atomic ratio of metallic element as this sputtering target material can enumerate In:M:Zn=1:1:1, In: M:Zn=1:1:1.2, In:M:Zn=1:3:2, In:M:Zn=1:3:4, In:M:Zn=1:3:6 etc..
In addition, as sputtering target material, it is preferable to use packets when oxide semiconductor film 108 is made of In-M-Zn oxide The target of the oxide of In-M-Zn containing polycrystalline.By using the target comprising polycrystalline In-M-Zn oxide, tool easy to form There is crystalline oxide semiconductor film 108.Note that being formed by the atomic ratio of oxide semiconductor film 108 in above-mentioned sputtering Change in the range of ± the 40% of the atomic ratio of metallic element in target.For example, the use of atomic ratio being In:Ga:Zn=4: When the sputtering target material of 2:4.1, be formed by oxide semiconductor film 108 atomic ratio may be In:Ga:Zn=4:2:3 or Near it.
The energy gap of oxide semiconductor film 108 is 2eV or more, preferably 2.5eV or more.In this way, by using energy gap compared with Wide oxide semiconductor can reduce the off-state current of transistor 100.
Oxide semiconductor film 108 preferably has on-monocrystalline structure.On-monocrystalline structure is for example including following c-axis oriented crystallines Oxide semiconductor (CAAC-OS), polycrystalline structure, microstructure or non crystalline structure.In on-monocrystalline structure, non crystalline structure is lacked Density of states highest is fallen into, and the defect state density of CAAC-OS is minimum.
[being used as protecting the insulating film 1 of insulating film]
Insulating film 114,116 is used as the protection insulating film of transistor 100.In addition, insulating film 114,116 has to oxide half The function of the supply oxygen of electrically conductive film 108.That is, insulating film 114,116 includes oxygen.In addition, insulating film 114 be can make oxygen penetrate it is exhausted Velum.Note that insulating film 114 is also act as alleviating when forming insulating film 116 below to caused by oxide semiconductor film 108 The film of damage.
As insulating film 114, can be used with a thickness of 5nm or more and 150nm hereinafter, preferably 5nm or more and 50nm with Under silicon oxide film, silicon oxynitride film etc..
Furthermore it is preferred that keeping the defects of insulating film 114 amount less, it is typical that measured by electron spin resonance (ESR) The spin density of the signal occurred due to silicon dangling bonds and at g=2.001 be preferably 3 × 1017spins/cm3Below. This is because oxygen is bonded with the defect, and makes the permeability of the oxygen in insulating film 114 if the defect concentration of insulating film 114 is high The reason of reduction.
In insulating film 114, the oxygen for being externally entering insulating film 114 sometimes, which is not all of, is moved to the outer of insulating film 114 Portion, but part of it remains in inside insulating film 114.In addition, sometimes while oxygen is externally entering insulating film 114, absolutely Oxygen contained by velum 114 is moved to the outside of insulating film 114, and the movement of oxygen thus occurs in insulating film 114.Forming energy When the oxide insulating film for enough penetrating oxygen is as insulating film 114, it can make from the insulating film 116 being arranged on insulating film 114 The oxygen of disengaging is moved in oxide semiconductor film 108 by insulating film 114.
It is formed in addition, insulating film 114 can be used due to the low oxide insulating film of the density of states of nitrogen oxides.Note Meaning should be formed in sometimes the energy (E of the top of valence band of oxide semiconductor film due to the density of states of nitrogen oxidesV_OS) and oxygen Energy (the E at the conduction band bottom of compound semiconductor filmC_OS) between.As above-mentioned oxide insulating film, nitrogen oxides can be used The few silicon oxynitride film of burst size or the few oxynitriding aluminium film etc. of the burst size of nitrogen oxides.
In addition, the few silicon oxynitride film of the burst size of nitrogen oxides is ammonia burst size in thermal desorption spec-troscopy (TDS) analytic approach (TDS) Than nitrogen oxides burst size more than film, typically the burst size of ammonia be 1 × 1018/cm3Above and 5 × 1019/cm3Below. Note that it is 50 DEG C or more and 650 DEG C hereinafter, preferably 50 DEG C or more and 550 DEG C that the ammonia burst size, which is carrying out film surface temperature, Ammonia burst size when heat treatment below.
Nitrogen oxides (NOx, x is greater than 0 and for 2 hereinafter, preferably 1 or more and 2 or less), typically NO2Or NO is insulating Energy level is formed in film 114 etc..The energy level is located in the energy gap of oxide semiconductor film 108.As a result, when nitrogen oxides is diffused into absolutely When the interface of velum 114 and oxide semiconductor film 108, the energy level is in 114 side trapped electron of insulating film sometimes.As a result, Trapped electron stays near the interface of insulating film 114 and oxide semiconductor film 108, thus makes the threshold voltage of transistor It drifts about to positive direction.
In addition, nitrogen oxides reacts with ammonia and oxygen when being heated.When being heated, insulating film The ammonia that 114 nitrogen oxides for being included are included with insulating film 116 reacts, the nitrogen oxides that thus insulating film 114 is included It reduces.Therefore, it is not easy trapped electron in the interface of insulating film 114 and oxide semiconductor film 108.
By the way that as insulating film 114, using above-mentioned oxide insulating film, the drift of the threshold voltage of transistor can be reduced, So as to reduce the electrical variation of transistor.
By the heat treatment in the manufacturing process of transistor, typically at 300 DEG C of heating more than or lower than 350 DEG C Reason, insulating film 114 is measured using 100K ESR below ESR spectrum in, observe the g factor be 2.037 with Upper and 2.039 first signals below, the g factor is 2.001 or more and 2.003 second signals below and the g factor is 1.964 Above and 1.966 third signals below.In the ESR measurement of X band, segmentation width between the first signal and second signal and Segmentation width between second signal and third signal is 5mT or so.In addition, the g factor is 2.037 or more and 2.039 below First signal, the g factor are 2.001 or more and 2.003 second signals below and the g factor is 1.964 or more and 1.966 or less Third signal spin density summation be lower than 1 × 1018spins/cm3, it is typically 1 × 1017spins/cm3More than or lower than 1×1018spins/cm3。
In 100K ESR below spectrum, the g factor is 2.037 or more and 2.039 first signals below, the g factor is 2.001 or more and 2.003 second signals below and the g factor are the spin of 1.964 or more and 1.966 third signals below The sum of density is equivalent to due to nitrogen oxides (NOx, x is greater than 0 and for 2 hereinafter, preferably 1 or more and 2 or less) signal Spin density sum.As the typical example of nitrogen oxides, there are nitric oxide, nitrogen dioxide etc..That is, the g factor is 2.037 Above and 2.039 first signals below, the g factor is 2.001 or more and 2.003 second signals below and the g factor is The sum of the spin density of 1.964 or more and 1.966 third signals below is fewer, and the nitrogen oxides in oxide insulating film contains It measures fewer.
In addition, the nitrogen concentration of above-mentioned oxide insulating film measured using SIMS is 6 × 1020atoms/cm3Below.
Silane and nitrous oxide are used by utilizing in the case where underlayer temperature is 220 DEG C or more and 350 DEG C of situations below PECVD form above-mentioned oxide insulating film, film fine and close and with high hardness can be formed.
Insulating film 116 is the oxide insulating film that oxygen content is more than stoichiometric composition.Above-mentioned oxide insulating film due to It is heated and the disengaging of part thereof of oxygen.In addition, in TDS, above-mentioned oxide insulating film include oxygen evolution amount be 1.0 × 1019atoms/cm3More than, preferably 3.0 × 1020atoms/cm3Above region.Note that above-mentioned oxygen evolution amount is in TDS Heat treatment temperature be 50 DEG C to 650 DEG C or 50 DEG C to 550 DEG C in the range of the total amount of oxygen that is released.On in addition, Stating oxygen evolution amount is that the oxygen evolution total amount of oxygen atom is scaled in TDS.
It can be used as insulating film 116 with a thickness of 30nm or more and 500nm hereinafter, preferably 50nm or more and 400nm Silicon oxide film below, silicon oxynitride film etc..
Furthermore it is preferred that keeping the defects of insulating film 116 amount less, it is typical that measured by ESR hanging due to silicon The spin density of key and the signal occurred at g=2.001 is lower than 1.5 × 1018spins/cm3, more preferably 1 × 1018spins/cm3Below.Since insulating film 116 is farther from oxide semiconductor film 108 compared with insulating film 114, so insulation The defect concentration of film 116 can also be higher than insulating film 114.
In addition, can not clearly confirm sometimes because insulating film 114,116 can be used identical type material and be formed To the interface of insulating film 114 and insulating film 116.Therefore, in the present embodiment, insulating film 114 and insulation are illustrated with dotted line The interface of film 116.Note that in the present embodiment, although illustrating the double-layer structure of insulating film 114 Yu insulating film 116, this Invent it is not limited to this, for example, it is also possible to using the laminated construction of the single layer structure of insulating film 114 or three layers or more.
[being used as protecting the insulating film 2 of insulating film]
Insulating film 118 is used as the protection insulating film of transistor 100.
Insulating film 118 includes one or both in hydrogen and nitrogen.Alternatively, insulating film 118 includes nitrogen and silicon.Insulating film 118 Have the function of stopping oxygen, hydrogen, water, alkali metal, alkaline-earth metal etc..By the way that insulating film 118 is arranged, can anti-block from oxide Semiconductor film 108 is diffused into outside and the oxygen that can prevent insulating film 114,116 from being included is diffused into outside, additionally it is possible to inhibit Hydrogen, water etc. are from outside intrusion oxide semiconductor film 108.
As insulating film 118, nitride insulation film can be used for example.As the nitride insulation film, there are silicon nitride, nitrogen Silica, aluminium nitride, aluminum oxynitride etc..
Although the various films such as conductive film documented by above-mentioned, insulating film, oxide semiconductor film and metal film can use Sputtering method or PECVD are formed, but also can use other methods, such as thermal chemical vapor deposition (CVD) method is formed.As The example of thermal cvd can enumerate Metalorganic chemical vapor deposition (MOCVD) method or atomic layer deposition (ALD) method etc..
Since thermal cvd is the forming method without using plasma, has and do not generate because plasma damage draws The advantages of defect risen.Furthermore, it is possible to carry out thermal cvd in the following manner: source gas being supplied in process chamber, by process chamber Interior pressure is set as atmospheric pressure or decompression and on substrate deposition film.
Furthermore, it is possible to carry out ALD method in the following manner: source gas being supplied in process chamber, indoor pressure will be handled It is set as atmospheric pressure or decompression and on substrate deposition film.
<configuration example 2 of 1-3. semiconductor device>
Then, the version with transistor 100 shown in Figure 1A to Fig. 1 C is illustrated using Fig. 2A to Fig. 6 C.
Fig. 2A is the top view of the transistor 100A of the semiconductor device as an embodiment of the invention, Fig. 2 B phase When in the sectional view along chain-dotted line X1-X2 shown in Fig. 2A, Fig. 2 C is equivalent to cutting along chain-dotted line Y1-Y2 shown in Fig. 2A Face figure.
Transistor 100A shown in Fig. 2A and Fig. 2 B has so-called channel protective type transistor arrangement.In this way, of the invention The semiconductor device of one embodiment can have channel etch type transistor arrangement or channel protective type transistor arrangement.
In addition, insulating film 114,116 includes opening portion 141a, 141b in transistor 100A.In addition, oxide is partly led Body film 108 opening 141a, 141b and conductive film 112a, 112b are connected.In addition, being formed on conductive film 112a, 112b There is insulating film 118.In addition, insulating film 114,116 has the function of so-called channel protection film.In addition, other of transistor 100A Structure and above-mentioned transistor 100 are same, play same effect.
In addition, Fig. 3 A is the top view of the transistor 100B of the semiconductor device of an embodiment of the invention, Fig. 3 B It is equivalent to the sectional view along chain-dotted line X1-X2 shown in Fig. 3 A, Fig. 3 C is equivalent to along chain-dotted line Y1-Y2 shown in Fig. 3 A Sectional view.
Transistor 100B includes: the conductive film 104 on substrate 102；Insulating film 106 on substrate 102 and conductive film 104； Oxide semiconductor film 108 on insulating film 106；Conductive film 112a on oxide semiconductor film 108；Oxide semiconductor film Conductive film 112b on 108；Insulating film 114 on oxide semiconductor film 108, conductive film 112a and conductive film 112b；Insulation Insulating film 116 on film 114；Conductive film 120a on insulating film 116；Conductive film 120b on insulating film 116；And insulating film 116, the insulating film 118 on conductive film 120a and conductive film 120b.
In addition, insulating film 114,116 includes opening portion 142a.In addition, insulating film 106,114,116 includes opening portion 142b.Conductive film 120a opening 142b is electrically connected with conductive film 104.In addition, conductive film 120b opening 142a It is electrically connected with conductive film 112b.
In addition, insulating film 106 has the function of the first grid insulating film of transistor 100B, absolutely in transistor 100B Velum 114,116 has the function of that the second grid insulating film of transistor 100B, insulating film 118 have the protection of transistor 100B The function of insulating film.In addition, conductive film 104 has the function of first gate electrode in transistor 100B, conductive film 112a has The function of source electrode, conductive film 112b have the function of drain electrode.In addition, in transistor 100B, conductive film 120a has the The function of two gate electrode, conductive film 120b have the function of the pixel electrode of display device.
In addition, as shown in Figure 3 C, conductive film 120a opening 142b is electrically connected with conductive film 104.Therefore, conductive film 104 and conductive film 120a is applied identical current potential.
In addition, as shown in Figure 3 C, oxide semiconductor film 108 is located at the position opposite with conductive film 104 and conductive film 120a It sets, and is clipped between two conductive films for being used as gate electrode.Length and conduction in the orientation of conductive film 120a Length in the channel width dimension of film 120a is both greater than length and oxygen in the orientation of oxide semiconductor film 108 Length in the channel width dimension of compound semiconductor film 108, oxide semiconductor film 108 it is whole across insulating film 114, 116 are covered by conductive film 120a.
In other words, conductive film 104 and conductive film 120a are connected by the opening portion being formed in insulating film 106,114,116 It connects, and conductive film 104 and conductive film 120a include positioned at the region in the outside of the end of oxide semiconductor film 108.
By using above structure, transistor 100B packet is surrounded using the electric field electricity of conductive film 104 and conductive film 120a The oxide semiconductor film 108 included.The electricity of first gate electrode and the second gate electrode can will be utilized as transistor 100B Field electricity is known as surrounding channel (S- around the apparatus structure of the transistor for the oxide semiconductor film for being formed with channel region Channel) structure.
Because transistor 100B has S-channel structure, it is possible to use the conductive film for being used as first gate electrode 104 pairs of oxide semiconductor films 108 effectively apply the electric field for being used to cause channel, as a result, the electric current driving of transistor 100B Ability is improved, so as to obtain biggish on state current characteristic.Further, since on state current can be increased, so can So that transistor 100B is miniaturized.In addition, since transistor 100B has oxide semiconductor film 108 by being used as first grid electricity The structure that the conductive film 104 of pole and the conductive film 120a for being used as the second gate electrode are surrounded, it is possible to improve transistor 100B Mechanical strength.
In addition, can be used same as above-mentioned conductive film 104, the material of 112a, 112b as conductive film 120a, 120b Material.Especially, as conductive film 120a, 120b, it is preferable to use oxide conductive film (OC).By as conductive film 120a, 120b use oxide conductive film, can be to adding oxygen in insulating film 114,116.
In addition, the other structures of transistor 100B and above-mentioned transistor 100 are same, same effect is played.
In addition, Fig. 4 A is the top view of the transistor 100C of the semiconductor device of an embodiment of the invention, Fig. 4 B It is equivalent to the sectional view along chain-dotted line X1-X2 shown in Fig. 4 A, Fig. 4 C is equivalent to along chain-dotted line Y1-Y2 shown in Fig. 4 A Sectional view.
Between transistor 100C and above-mentioned transistor 100B the difference is that: in transistor 100C, conductive film 112a, 112b have three-decker.
The conductive film 112a of transistor 100C includes: conductive film 112a_1；Conductive film 112a_2 on conductive film 112a_1； And the conductive film 112a_3 on conductive film 112a_2.In addition, the conductive film 112b of transistor 100C includes: conductive film 112b_ 1；Conductive film 112b_2 on conductive film 112b_1；And the conductive film 112b_3 on conductive film 112b_2.
For example, conductive film 112a_1, conductive film 112b_1, conductive film 112a_3 and conductive film 112b_3 preferably comprise titanium, One or more of tungsten, tantalum, molybdenum, indium, gallium, tin and zinc.In addition, conductive film 112a_2 and conductive film 112b_2 are preferably comprised One or more of copper, aluminium and silver.
Specifically, can be with as conductive film 112a_1, conductive film 112b_1, conductive film 112a_3 and conductive film 112b_3 Using In-Sn oxide or In-Zn oxide, copper can be used as conductive film 112a_2 and conductive film 112b_2.
By using above structure, the routing resistance of conductive film 112a, 112b can be reduced, and inhibits partly to lead oxide The diffusion of the copper of body film 108, so being preferred.In addition, conductive film 112b and conduction can be reduced by using above structure The contact resistance of film 120b, so being preferred.In addition, the other structures of transistor 100C and above-mentioned transistor 100 are same, hair Wave same effect.
In addition, Fig. 5 A is the top view of the transistor 100D of the semiconductor device of an embodiment of the invention, Fig. 5 B It is equivalent to the sectional view along chain-dotted line X1-X2 shown in Fig. 5 A, Fig. 5 C is equivalent to along chain-dotted line Y1-Y2 shown in Fig. 5 A Sectional view.
Between transistor 100D and above-mentioned transistor 100B the difference is that: in transistor 100D, conductive film 112a, 112b have three-decker.In addition, the difference is that conductive between transistor 100D and above-mentioned transistor 100C The shape of film 112a, 112b.
The conductive film 112a of transistor 100D includes: conductive film 112a_1；Conductive film 112a_2 on conductive film 112a_1； And the conductive film 112a_3 on conductive film 112a_2.In addition, the conductive film 112b of transistor 100C includes: conductive film 112b_ 1；Conductive film 112b_2 on conductive film 112b_1；And the conductive film 112b_3 on conductive film 112b_2.In addition, as conduction Film 112a_1, conductive film 112a_2, conductive film 112a_3, conductive film 112b_1, conductive film 112b_2 and conductive film 112b_3, can To use above-mentioned material.
In addition, the end of conductive film 112a_1 has the region in the outside positioned at the end of conductive film 112a_2, conductive film The top surface and side and the region including being contacted with conductive film 112a_1 of 112a_3 covering conductive film 112a_2.In addition, conductive film The end of 112b_1 has the region in the outside positioned at the end of conductive film 112b_2, and conductive film 112b_3 covers conductive film The top surface and side and the region including being contacted with conductive film 112b_1 of 112b_2.
By using above structure, the routing resistance of conductive film 112a, 112b can be reduced, and inhibits partly to lead oxide The diffusion of the copper of body film 108, so being preferred.In addition, in terms of the diffusion for suitably inhibiting copper, with above-mentioned crystal Pipe 100C is compared, and structure shown in transistor 100D is preferred.In addition, conduction can be reduced by using above structure The contact resistance of film 112b and conductive film 120b, so being preferred.In addition, the other structures of transistor 100D and above-mentioned crystal Pipe 100 is same, plays same effect.
In addition, Fig. 6 A is the top view of the transistor 100E of the semiconductor device of an embodiment of the invention, Fig. 6 B It is equivalent to the sectional view along chain-dotted line X1-X2 shown in Fig. 6 A, Fig. 6 C is equivalent to along chain-dotted line Y1-Y2 shown in Fig. 6 A Sectional view.
Between the transistor 100E and above-mentioned transistor 100D the difference is that position of conductive film 120a, 120b.Tool For body, conductive film 120a, 120b of transistor 100E is located on insulating film 118.In addition, the other structures of transistor 100E with Above-mentioned transistor 100D is same, and plays same effect.
In addition, the structure of transistor according to the present embodiment can be freely combined with each other.
<structure example 3 of 1-4. semiconductor device>
The other embodiments of transistor 100,100A, 100B, 100C, 100D and 100E shown in Figure 1A to Fig. 6 C are said It is bright.
Pair in above-mentioned transistor 100,100A, 100B, 100C, 100D and 100E, in oxide semiconductor film 108_1 The atomic ratio of the In for Zn in oxide semiconductor film 108_2 can be greater than in the atomic ratio of the In of Zn.Hereinafter, to satisfaction The atomic ratio of the metallic element of the oxide semiconductor film 108_1 and oxide semiconductor film 108_2 of this condition is illustrated.
As an example, the atomic ratio of In, M and Zn of oxide semiconductor film 108_1 are preferably In:M:Zn=4:2: 3 or its near.The atomic ratio of In, M and Zn of oxide semiconductor film 108_2 be preferably In:M:Zn=1:1:1 or its near. Here, " near " include following situation: when In is 1, M is 0.5 or more and 1.5 hereinafter, and Zn is 0.1 or more and 2 or less. Alternatively, the atomic ratio of In, M and Zn of oxide semiconductor film 108_2 be preferably In:M:Zn=5:1:6 or its near.Here, " near " include following situation: when In is 5, M is 0.5 or more and 1.5 hereinafter, and Zn is 5 or more and 7 or less.
Moreover it is preferred that the electron affinity of oxide semiconductor film 108_1 is greater than oxide semiconductor film 108_2, The difference of the electron affinity of the electron affinity and oxide semiconductor film 108_2 of oxide semiconductor film 108_1 is 0.15eV Above or 0.5eV or more and 2eV or less or 1eV or less.That is the energy level of the conduction band bottom end of oxide semiconductor film 108_2 Than oxide semiconductor film 108_1 closer to vacuum level, it is typical that the conduction band bottom end of oxide semiconductor film 108_1 with The energy level difference of the conduction band bottom end of oxide semiconductor film 108_2 be preferably 0.15eV or more or 0.5eV or more and 2eV or less or 1eV or less.
By using this structure, in transistor 100, oxide semiconductor film 108_1 becomes main current path.Just It is to say, oxide semiconductor film 108_1 has the function of channel region.In addition, oxide semiconductor film 108_2 use by with structure It is shaped to the oxide semiconductor that the identical metallic element of metallic element of the oxide semiconductor film 108_1 of channel region is constituted Film is formed.By using this structure, the interface of oxide semiconductor film 108_1 and oxide semiconductor film 108_2 not It is easy to produce interface scattering.It is not obstructed in the movement of the interface carrier as a result, therefore the field-effect mobility of transistor It is improved.
In addition, in transistor 100, the threshold value of the size due to drain voltage can be inhibited by with this structure The reliability of transistor can be improved in the variation of voltage.
By making oxide semiconductor film 108_1 and oxide semiconductor film 108_2 separately includes the original of its In The region of atom ratio of the sub- ratio greater than M, can be improved the field-effect mobility of transistor 100.Specifically, transistor 100 field-effect mobility can be more than 50cm2/ Vs, it is preferred that the field-effect mobility of transistor 100 can be more than 100cm2/Vs.In addition, passing through the oxide semiconductor that the In of atomic ratio to(for) Zn is greater than to oxide semiconductor film 108_2 For oxide semiconductor film 108_1, oxide semiconductor film 108_1 is used as channel, and becomes main current path.Because Back channel can be made to leave from current path, it is possible to reduce the electron trap in channel region.As a result, it is possible to reduce The electrical variation of transistor.
By making the atom ratio of Zn be higher than the ratio of aggregates of In, M and Zn, the crystallization of oxide semiconductor film can be improved Property.Impurity such as hydrogen or water or the constitution element for conductive film 112a, 112b are not easy to be diffused into the high oxidation of crystallinity In object semiconductor film.The CAAC-OS illustrated below has excellent above-mentioned function.By the way that oxide semiconductor film will be included in The atomic ratio of metallic element in 108_2 is set as above range, can reduce oxide semiconductor film 108_1 and oxide half The impurity level of electrically conductive film 108_2.In addition, because oxide semiconductor film 108_2 can be used as etch stop film, it is possible to Inhibit the thickness for the oxide semiconductor film 108 being etched between caused different transistor to conductive film 122a, 112b Unevenly.In this way, passing through the gold for making each of oxide semiconductor film 108_1 and oxide semiconductor film 108_2 be included The atom ratio for belonging to element is different (ratio at least changing In and Zn), and the field-effect mobility of transistor 100 can be improved, and And the reliability of transistor 100 can be improved.
<manufacturing method 1 of 1-5-1. semiconductor device>
In the following, the manufacture referring to Fig. 7 A to Figure 10 C to the transistor 100B of the semiconductor device of an embodiment of the invention Method is illustrated.
In addition, Fig. 7 A to Fig. 7 C, Fig. 8 A to Fig. 8 C, Fig. 9 A to Fig. 9 C and Figure 10 A to Figure 10 C illustrate semiconductor device The sectional view of manufacturing method.In addition, in Fig. 7 A to Fig. 7 C, Fig. 8 A to Fig. 8 C, Fig. 9 A to Fig. 9 C and Figure 10 A to Figure 10 C, left side It is the sectional view in orientation, right side is the sectional view in channel width dimension.
Firstly, forming conductive film on substrate 102, the conductive film is processed by photo-mask process and etching work procedure, To form the conductive film 104 as first gate electrode.Then, it is formed on conductive film 104 and is used as the exhausted of first grid insulating film Velum 106 (referring to Fig. 7 A).
In the present embodiment, glass substrate is used as substrate 102.As the conductive film for being used as first gate electrode 104, the titanium film with a thickness of 50nm and the copper film with a thickness of 200nm are formed by sputtering method.As insulating film 106, pass through PECVD Method forms the silicon nitride film with a thickness of 400nm and the silicon oxynitride film with a thickness of 50nm.
In addition, above-mentioned silicon nitride film has three including the first silicon nitride film, the second silicon nitride film and third silicon nitride film Layer structure.The three-decker can for example be formed as follows.
The first silicon nitride film with a thickness of 50nm can be formed under the following conditions: for example, using flow as source gas The ammonia gas that the nitrogen and flow that silane, flow for 200sccm are 2000sccm are 100sccm, the reaction to PECVD device Interior for should source gas, control the pressure in the reaction chamber to 100Pa, use 27.12MHz high frequency electric source supply 2000W Power.
The second silicon nitride film with a thickness of 300nm can be formed under the following conditions: using the flow to be as source gas The ammonia gas that the nitrogen and flow that silane, the flow of 200sccm is 2000sccm are 2000sccm, the reaction to PECVD device Interior for should source gas, control the pressure in the reaction chamber to 100Pa, use 27.12MHz high frequency electric source supply 2000W Power.
The third silicon nitride film with a thickness of 50nm can be formed under the following conditions: using the flow to be as source gas The silane and flow of 200sccm be 5000sccm nitrogen, into the reaction chamber of PECVD device for should source gas, will react Indoor pressure control is 100Pa, uses the power of the high frequency electric source supply 2000W of 27.12MHz.
In addition, above-mentioned first silicon nitride film, the second silicon nitride film and third silicon nitride film can be in 350 DEG C of substrates below At a temperature of formed.
By as silicon nitride film use above-mentioned three-decker, such as conductive film 104 use the conduction comprising copper In the case where film, following effect can be played.
First silicon nitride film can inhibit copper to spread from conductive film 104.Second silicon nitride film has the function of release hydrogen Can, the pressure resistance for being used as the insulating film of gate insulating film can be improved.Third silicon nitride film is that the burst size of hydrogen is few and can press down Make the film of the hydrogen diffusion discharged from the second silicon nitride film.
Then, oxide semiconductor film 108_1_0 and oxide semiconductor film 108_2_0 (ginseng are formed on insulating film 106 According to Fig. 7 B and Fig. 7 C).
Fig. 7 B is when forming oxide semiconductor film 108_1_0 and oxide semiconductor film 108_2_0 on insulating film 106 Depositing device in schematic cross-section.Fig. 7 B is schematically shown: the sputtering equipment as depositing device；In the sputtering equipment The target 191 of middle setting；In the plasma 192 that the lower section of target 191 is formed.
In addition, in figure 7b, the oxygen or excess oxygen for being added to insulating film 106 are schematically shown with the arrow of dotted line.Example Such as, in the case where carrier of oxygen is used when forming oxide semiconductor film 108_1_0, suitably insulating film 106 can be added Oxygen.
Firstly, forming oxide semiconductor film 108_1_0 on insulating film 106.The thickness of oxide semiconductor film 108_1_0 Degree can be for 1nm or more and 25nm is hereinafter, preferably 5nm or more and 20nm or less.In addition, oxide semiconductor film 108_1_0 It is formed using either one or two of inert gas (typically, Ar gas) and carrier of oxygen.It is partly led in addition, forming oxide The ratio (hereinafter also referred to as oxygen flow ratio) of shared carrier of oxygen is 0% or more in deposition gases entirety when body film 108_1_0 And it is lower than 30%, preferably 5% or more and 15% or less.
Oxide semiconductor film 108_1_0 is formed by the oxygen flow ratio with above range, oxide semiconductor can be made The crystallinity of film 108_1_0 is lower than the crystallinity of oxide semiconductor film 108_2_0.
Then, oxide semiconductor film 108_2_0 is formed on oxide semiconductor film 108_1_0.In addition, when forming oxygen When compound semiconductor film 108_2_0, plasma discharge is carried out under the atmosphere comprising carrier of oxygen.At this point, to oxide is become The oxide semiconductor film 108_1_0 addition oxygen for being formed face of semiconductor film 108_2_0.In addition, forming oxide semiconductor Oxygen flow ratio when film 108_2_0 is for 30% or more and 100% hereinafter, preferably 50% or more and 100% hereinafter, more preferably 70% or more and 100% or less.
In addition, oxide semiconductor film 108_2_0 with a thickness of 20nm or more and 100nm hereinafter, preferably 20nm or more And 50nm or less.
In addition, as described above, being used to be formed the oxygen flow of oxide semiconductor film 108_2_0 than being preferably higher than used to be formed The oxygen flow ratio of oxide semiconductor film 108_2_0.In other words, oxide semiconductor film 108_1_0 is preferably than oxide half It is formed under electrically conductive film 108_2_0 low partial pressure of oxygen.
In addition, underlayer temperature when forming oxide semiconductor film 108_1_0 and oxide semiconductor film 108_2_0 can be with For more than room temperature (25 DEG C) and 200 DEG C hereinafter, preferably more than room temperature and 130 DEG C or less.Substrate temperature is set to above-mentioned models It is the feelings suitable for the glass substrate (for example, glass substrate of above-mentioned 8th generation to the 10th generation) using large area in enclosing Condition.Substrate temperature when especially, by by the formation of oxide semiconductor film 108_1_0 and oxide semiconductor film 108_2_0 Degree is set as room temperature, can inhibit the deformed or bent of substrate.In addition, wanting to improve oxide semiconductor film 108_2_0's In crystalline situation, underlayer temperature when forming oxide semiconductor film 108_2_0 is preferably improved.
In addition, by being continuously formed oxide semiconductor film 108_1_0 and oxide semiconductor film 108_ in a vacuum 2_0 can prevent impurity to be mixed into each interface, so being preferred.
In addition, it is necessary to carry out the high purity of sputter gas.For example, as the carrier of oxygen or argon gas that are used as sputter gas Body is -40 DEG C hereinafter, being preferably -80 DEG C hereinafter, being more preferably -100 DEG C hereinafter, further preferably -120 DEG C using dew point High-pure gas below, it is possible thereby to which moisture etc. is prevented to be mixed into oxide semiconductor film as much as possible.
In addition, in the case where passing through sputtering method deposition oxide semiconductor film, it is preferable to use the absorption types such as cryogenic pump are true Empty pump air pump carries out fine pumping to the process chamber of sputtering equipment and (is evacuated to 5 × 10-7Pa to 1 × 10-4Pa or so) to the greatest extent may be used The removal of energy ground is the water etc. of impurity for oxide semiconductor film.Especially, sputtering equipment it is standby when handle it is indoor It is equivalent to H2The partial pressure of the gas molecule (gas molecule for being equivalent to m/z=18) of O is preferably 1 × 10-4Pa is hereinafter, more preferably 5×10-5Pa or less.
In the present embodiment, oxide semiconductor film 108_1_0 using In-Ga-Zn metal oxide target (In:Ga: Zn=4:2:4.1 [atomic ratio]) and formed using sputtering method.In addition, substrate when by formation oxide semiconductor film 108_1_0 Temperature is set as room temperature, uses the argon gas that flow is 180sccm and the carrier of oxygen (oxygen that flow is 20sccm as deposition gases 10%) flow-rate ratio is.
In addition, oxide semiconductor film 108_2_0 using In-Ga-Zn metal oxide target (In:Ga:Zn=4:2: 4.1 [atomic ratios]) and formed using sputtering method.In addition, underlayer temperature when forming oxide semiconductor film 108_2_0 is set For room temperature, use the carrier of oxygen that flow is 200sccm as deposition gases (oxygen flow ratio is 100%).
Oxygen flow ratio and oxide semiconductor film 108_2_0 when formation by making oxide semiconductor film 108_1_0 Formation when oxygen flow than different, can be formed with a variety of crystalline stack membranes.
Then, desired by the way that oxide semiconductor film 108_1_0 and oxide semiconductor film 108_2_0 to be processed as Shape forms the oxide semiconductor film 108_1 of the island and oxide semiconductor film 108_2 of island.In addition, in this embodiment party In formula, (the ginseng of oxide semiconductor film 108 of island is made of oxide semiconductor film 108_1, oxide semiconductor film 108_2 According to Fig. 8 A).
Moreover it is preferred that being heated after forming oxide semiconductor film 108, (hereinafter referred to as first adds Heat treatment).By carrying out the first heat treatment, can reduce includes hydrogen, water etc. in oxide semiconductor film 108.In addition, Heat treatment for the purpose of the reduction of hydrogen, water etc. can also carry out before oxide semiconductor film 108 is processed as island. Note that the first heat treatment is one of high purity processing of oxide semiconductor film.
First heat treatment temperature be, for example, 150 DEG C of strain points more than and less than substrate, preferably 200 DEG C or more and 450 DEG C hereinafter, more preferably 250 DEG C or more and 350 DEG C or less.
In addition, electric furnace, RTA equipment etc. can be used in the first heat treatment.By using RTA equipment, if in the short time It is interior to be heated with the temperature more than strain point of substrate.Thus, it is possible to shorten heating time.At first heating Reason can (water content is 20ppm hereinafter, preferably 1ppm is hereinafter, more preferably 10ppb is below in nitrogen, oxygen, ultra dry air Air) or the atmosphere of rare gas (argon, helium etc.) under carry out.Above-mentioned nitrogen, oxygen, ultra dry air or rare gas preferably do not contain Hydrogen, water etc..In addition, after being heated under nitrogen or rare gas atmosphere, it can also be in oxygen or ultra dry air atmosphere Under heated.As a result, oxygen can be supplied while the hydrogen in oxide semiconductor film, water etc. can be made to be detached from Into oxide semiconductor film.As a result, it is possible to reduce the Lacking oxygen in oxide semiconductor film.
Then, conductive film 112 is formed on insulating film 106 and oxide semiconductor film 108 (referring to Fig. 8 B).
In the present embodiment, as conductive film 112, the titanium film with a thickness of 30nm, thickness are sequentially formed by sputtering method Copper film for 200nm, the titanium film with a thickness of 10nm.
Then, by the way that conductive film 112 is processed as desired shape, the conductive film 112a of island is formed, island is led Electrolemma 112b (referring to Fig. 8 C).
In addition, in the present embodiment, being processed using wet etching equipment to conductive film 112.But conductive film 112 Processing method it is not limited to this, such as dry etching equipment also can be used.
In addition it is also possible to wash 108 (more specifically, oxygen of oxide semiconductor film after forming conductive film 112a, 112b Compound semiconductor film 108_2) surface (back channel side).As washing methods, for example, using the chemistry such as phosphoric acid The washing of solution.It is washed by using chemical solutions such as phosphoric acid, can remove and be attached to oxide semiconductor film 108_2 table The impurity (for example, including the element etc. in conductive film 112a, 112b) in face.Note that the washing must be not necessarily carried out, according to Situation can be without the washing.
In addition, in the formation process of conductive film 112a, 112b and/or above-mentioned washing procedure, oxide semiconductor sometimes The region that slave conductive film 112a, 112b of film 108 expose is sometimes thinning.
In addition, in the semiconductor device of an embodiment of the invention, from the area that conductive film 112a, 112b expose Domain, that is, oxide semiconductor film 109_2 is the oxide semiconductor film that its crystallinity is improved.Impurity (is especially used In the constitution element of conductive film 112a, 112b) it is not easy to be diffused into the high oxide semiconductor film of crystallinity.It therefore, can be with A kind of semiconductor device of high reliablity is provided.
In addition, in Fig. 8 C, although showing the surface from conductive film 112a, 112b oxide semiconductor film 108 exposed, That is the surface of oxide semiconductor film 108_2 has the case where recess portion, but an embodiment of the invention is not limited to this, The surface of the oxide semiconductor film 108 exposed from conductive film 112a, 112b can also not have recess portion.
Then, insulating film 114 and insulating film 116 are formed on oxide semiconductor film 108 and conductive film 112a, 112b (referring to Fig. 9 A).
Here, it is preferred that being continuously formed insulating film 116 in a manner that is not exposed to the atmosphere after forming insulating film 114. By the flow, pressure, high frequency power and the lining that adjust source gas in a manner that is not exposed to the atmosphere after forming insulating film 114 At least one of bottom temperature is continuously formed insulating film 116, can reduce the interface of insulating film 114 Yu insulating film 116 The impurity concentration from Atmospheric components.
For example, silicon oxynitride film can be formed by PECVD as insulating film 114.At this point, as source gas, preferably Use deposition gases and oxidizing gas containing silicon.The typical example of deposition gases containing silicon is silane, disilane, the third silicon Alkane, fluorinated silane etc..As oxidizing gas, there are nitrous oxide, nitrogen dioxide etc..In addition, relative to above-mentioned deposition gas The oxidizing gas flowrate of body flow is 20 times or more and 500 times hereinafter, preferably 40 times or more and 100 times or less.
In the present embodiment, as insulating film 114, silicon oxynitride film is formed using PECVD under the following conditions: being protected The temperature for holding substrate 102 is 220 DEG C, uses the silane that flow is 50sccm and the oxygen that flow is 2000sccm as source gas Change phenodiazine, handling indoor pressure is 20Pa, also, the high frequency power for being supplied to parallel-plate electrode is 13.56MHz, 100W (function Rate density is 1.6 × 10-2W/cm2)。
As insulating film 116, silicon oxide film or silicon oxynitride film are formed under the following conditions: will be set to and carried out vacuum The indoor underlayer temperature of the processing of the PECVD device of pumping remains 180 DEG C or more and 350 DEG C hereinafter, by source gas importing In reason room and will handle indoor pressure be set as 100Pa or more and 250Pa hereinafter, preferably 100Pa or more and 200Pa with Under, also, 0.17W/cm is supplied to the indoor electrode of processing is set to2Above and 0.5W/cm2Hereinafter, preferably 0.25W/cm2 Above and 0.35W/cm2High frequency power below.
In the sedimentary condition of insulating film 116, there is above-mentioned power density to the reaction chamber supply with above-mentioned pressure High frequency power, thus the decomposition efficiency of source gas is improved in the plasma, and oxygen radical increases, and promotes source gas Oxidation, so that the oxygen content in insulating film 116 is more than stoichiometric composition.On the other hand, with the lining in above-mentioned temperature range In the film that bottom temperature is formed, since the bonding force of silicon and oxygen is weaker, made in film by the heat treatment of process below A part of oxygen is detached from.As a result, oxygen content can be formed more than stoichiometric composition and part thereof of due to being heated The oxide insulating film that oxygen is detached from.
In the formation process of insulating film 116, insulating film 114 is used as the protective film of oxide semiconductor film 108.Cause This, can be formed to while damage caused by oxide semiconductor film 108 using the high high frequency power of power density reducing Insulating film 116.
In addition, in the sedimentary condition of insulating film 116, by increasing the deposition gas comprising silicon relative to oxidizing gas The flow of body, it is possible to reduce the defects of insulating film 116 amount.Typically, it is capable of forming the less insulated by oxide of defect level Film, wherein by the spin density of the ESR signal occurred due to silicon dangling bonds and at g=2.001 measured lower than 6 × 1017spins/cm3, preferably 3 × 1017spins/cm3Hereinafter, more preferably 1.5 × 1017spins/cm3Below.As a result, It can be improved the reliability of transistor 100.
It is preferred that being heated (the hereinafter referred to as second heat treatment) after forming insulating film 114,116.Pass through Two heat treatment, can reduce the nitrogen oxides being contained in insulating film 114,116.It, can will be exhausted by the second heat treatment A part of oxygen in velum 114,116 is moved in oxide semiconductor film 108 to reduce in oxide semiconductor film 108 The amount of Lacking oxygen.
The temperature of second heat treatment is typically set to lower than 400 DEG C, preferably less than 375 DEG C, further preferably It is 150 DEG C or more and 350 DEG C or less.Second heat treatment can nitrogen, oxygen, ultra dry air (water content be 20ppm hereinafter, Preferably 1ppm is hereinafter, more preferably 10ppb air below) or the atmosphere of rare gas (argon, helium etc.) under carry out.This plus In heat treatment, without containing hydrogen, water etc. preferably in above-mentioned nitrogen, oxygen, ultra dry air or rare gas.In the heat treatment, Electric furnace, RTA etc. can be used and carry out the heat treatment.
Then, opening portion 142a, 142b is formed in the desired region in insulating film 114,116 (referring to Fig. 9 B).
In the present embodiment, opening portion 142a, 142b is formed using dry etching equipment.Opening portion 142a reaches conductive film 112b, opening portion 142b reach conductive film 104.
Then, conductive film 120 is formed on insulating film 116 (referring to Fig. 9 C and Figure 10 A).
Fig. 9 C is the schematic cross-section in the depositing device when forming conductive film 120 on insulating film 116.Fig. 9 C is schematic Ground is shown: the sputtering equipment as depositing device；The target 193 being arranged in the sputtering equipment；It is formed in the lower section of target 193 Plasma 194.
Firstly, carrying out plasma discharge under the atmosphere comprising carrier of oxygen when forming conductive film 120.At this point, to quilt The insulating film 116 for forming conductive film 120 adds oxygen.Atmosphere when forming conductive film 120 can be mixed with inert gas (for example, helium Gas, argon gas, xenon-133 gas etc.) and carrier of oxygen.
Carrier of oxygen includes at least in the deposition gases when forming conductive film 120, heavy when forming conductive film 120 In pneumatosis body, ratio shared by carrier of oxygen is higher than 0% and for 100% hereinafter, preferably 10% or more and 100% hereinafter, more excellent It is selected as 30% or more and 100% or less.
In Fig. 9 C, the oxygen being added in insulating film 116 or excess oxygen are schematically shown with dotted arrow.
In the present embodiment, In-Ga-Zn metal oxide target (In:Ga:Zn=4:2:4.1 is utilized by sputtering method [atomic ratio]) form conductive film 120.
Although note that present embodiment show when forming conductive film 120 to insulating film 116 add oxygen method, It is not limited to this.For example, it is also possible to also add oxygen to insulating film 116 after forming conductive film 120.
As to insulating film 116 add oxygen method, can be used for example comprising indium, tin, silicon oxide (In-Sn-Si Oxide, also referred to as ITSO) target (In2O3:SnO2:SiO2=85:10:5 [wt%]) formed with a thickness of 5nm ITSO film.This When, when ITSO film with a thickness of 1nm or more and 20nm hereinafter, 2nm or more and when 10nm or less, can suitably penetrate oxygen And inhibit the release of oxygen, so being preferred.Then, make oxygen through ITSO film, oxygen is added to insulating film 116.As adding for oxygen Adding method can enumerate ion doping method, ion implantation, plasma processing method etc..In addition, when adding oxygen, by right One side of substrate is biased, and effectively oxygen can be added in insulating film 116.For example, can will be applied using incineration equipment Power density to the bias of the one side of substrate of the incineration equipment is set as 1W/cm2Above and 5W/cm2Below.In addition, pass through by Underlayer temperature when adding oxygen is set as room temperature or more and 300 DEG C hereinafter, preferably 100 DEG C or more and 250 DEG C hereinafter, can height Oxygen is added on effect ground to insulating film 116.
Then, by the way that conductive film 120 is processed as desired shape, the conductive film 120a of island is formed, island is led Electrolemma 120b (0B referring to Fig.1).
In the present embodiment, conductive film 120 is processed using wet etching equipment.
Then, insulating film 118 (0C referring to Fig.1) is formed on insulating film 116, conductive film 120a and conductive film 120b.
Insulating film 118 includes one or both in hydrogen and nitrogen.As insulating film 118, such as it is preferable to use silicon nitride films. Insulating film 118 can for example be formed by sputtering method or PECVD.For example, making when forming insulating film 118 by PECVD Underlayer temperature is lower than 400 DEG C, preferably less than 375 DEG C, further preferably 180 DEG C or more and 350 DEG C or less.By that will insulate The underlayer temperature when formation of film 118 is set as above range, fine and close film can be formed, so being preferred.In addition, passing through Underlayer temperature when by the formation of insulating film 118 is set as above range, can be by the oxygen or surplus in insulating film 114,116 Oxygen is moved to oxide semiconductor film 108.
For example, when as insulating film 118 using PECVD formed silicon nitride film when, as source gas it is preferable to use comprising Deposition gases, nitrogen and the ammonia of silicon.By using being a small amount of ammonia relative to nitrogen, ammonia dissociates and generates activity in the plasma Kind.The reactive species are included within being bonded between the silicon and hydrogen in the deposition gases comprising silicon and three keys between nitrogen molecular are cut It is disconnected.As a result, can be formed, silicon is promoted with being bonded for nitrogen, being bonded less of silicon and hydrogen, defect is few and fine and close silicon nitride film. On the other hand, when it is more that ammonia amount is relative to nitrogen quantity, the decomposition of the deposition gases comprising silicon and the decomposition of nitrogen are not in progress, silicon and hydrogen Bonding can left behind, and result in defect increase and unsound silicon nitride film.As a result, in source gas, preferably will Nitrogen flow-rate ratio relative to ammonia is set as 5 times or more and 50 times hereinafter, more preferably 10 times or more and 50 times or less.
In the present embodiment, as insulating film 118, by using PECVD device and using silane, nitrogen and ammonia as source Gas forms the silicon nitride film with a thickness of 50nm.The flow of silane is 50sccm, and the flow of nitrogen is 5000sccm, the flow of ammonia For 100sccm.The pressure of process chamber is set as 100Pa, substrate temperature is set to 350 DEG C, with the high-frequency electrical of 27.12MHz High frequency power of the source to parallel-plate electrode supply 1000W.PECVD device is that electrode area is 6000cm2Parallel-plate-type PECVD Equipment, also, be 1.7 × 10 by the power (power density) for being scaled per unit area for the power supplied-1W/cm2。
In addition, as conductive film 120a, 120b use In-Ga-Zn metal oxide target (In:Ga:Zn=4:2: 4.1 [atomic ratios]) form conductive film in the case where, by forming insulating film 118, in the hydrogen and nitrogen that insulating film 118 is included One or both enters sometimes in conductive film 120a, 120b.At this point, one or both in hydrogen and nitrogen is connected to conductive film When Lacking oxygen in 120a, 120b, the resistance of conductive film 120a, 120b decline sometimes.
In addition it is also possible to be carried out after forming insulating film 118 same with above-mentioned first heat treatment and the second heat treatment Deng heat treatment (hereinafter referred to as third heat treatment).
By carrying out third heat treatment, the oxygen that insulating film 116 is included is moved in oxide semiconductor film 108, fills out Mend the Lacking oxygen in oxide semiconductor film 108.
By above-mentioned operation, transistor 100B shown in Fig. 3 A to Fig. 3 C can be manufactured.
In addition, transistor 100 shown in Figure 1A to Fig. 1 C can be exhausted by being formed after carrying out process shown in Fig. 9 A Velum 118 manufactures.In addition, Fig. 2A to transistor 100A shown in fig. 2 C can be by changing conductive film 112a, 112b, insulation The formation of film 114,116 is sequentially and addition forms the process of opening portion 141a, 141b in insulating film 114,116 to manufacture.
<manufacturing method 2 of 1-5-2. semiconductor device>
Other manufacturing methods of the transistor 100B of the semiconductor device of an embodiment of the invention are illustrated.? This, the structure and manufacturing method of oxide semiconductor film are different from above-mentioned semiconductor device.Here, to above-mentioned < 1-4. semiconductor The structure example 3 of device > shown in the atomic ratio of the In for Zn in oxide semiconductor film 108_1 be greater than oxide and partly lead The manufacturing process of the transistor 100B of the atomic ratio of the In for Zn in body film 108_2 is illustrated.
(In:Ga:Zn=4:2:4.1 is [former using In-Ga-Zn metal oxide target by oxide semiconductor film 108_1_0 Sub- ratio]) and formed using sputtering method.In addition, underlayer temperature when forming oxide semiconductor film 108_1_0 is set as room Temperature, using the argon gas that flow is 180sccm and the carrier of oxygen that flow is 20sccm as deposition gases, (oxygen flow ratio is 10%).
In addition, oxide semiconductor film 108_2_0 uses In-Ga-Zn metal oxide target (In:Ga:Zn=1:1:1 [atomic ratio]) and formed using sputtering method.In addition, underlayer temperature when forming oxide semiconductor film 108_2_0 is set as 170 DEG C, using the argon gas that flow is 100sccm and the carrier of oxygen that flow is 100sccm as deposition gases, (oxygen flow ratio is 50%).
Oxygen flow ratio and oxide semiconductor film 108_2_0 when formation by making oxide semiconductor film 108_1_0 Formation when oxygen flow than different, the different stack membrane of crystallinity can be formed.In addition, by making oxide semiconductor film The temperature when formation of 108_1_0 is different from the temperature when formation of oxide semiconductor film 108_2_0, can form crystallinity Different stack membranes.
In addition, wanting to make the crystallinity of oxide semiconductor film 108_2_0 higher than oxide semiconductor film 108_1_0's In the case of, it is preferred that underlayer temperature when making to form oxide semiconductor film 108_2_0, which is higher than oxide semiconductor film 108_1_0, 's.
As other processes, above-mentioned<manufacturing method 1 of 1-5-1. semiconductor device>can be suitably used.
By above-mentioned operation, transistor shown in<structure example 3 of 1-4. semiconductor device>can be manufactured.
At least part of present embodiment can be appropriate with other embodiments documented by this specification or embodiment It combines and implements in ground.
(embodiment 2)
In the present embodiment, 2A to Figure 18 C carries out the oxide semiconductor film of an embodiment of the invention referring to Fig.1 Explanation.
<2-1. oxide semiconductor film>
Oxide semiconductor film preferably at least includes indium.It particularly preferably include indium and zinc.It is further preferred, that in addition to this, also Include aluminium, gallium, yttrium or tin etc..Alternatively, it is also possible to comprising boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten or One of magnesium etc. is a variety of.
It is considered herein that the case where oxide semiconductor film includes indium, element M and zinc.Note that element M is aluminium, gallium, yttrium or tin Deng.Can be used for the elements of element M as others, other than above-mentioned element, there are also boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium etc..Note that multiple above-mentioned elements can also be combined as element M.Note that in following explanation In, sometimes by the items of the atomic ratio of indium, element M and zinc that oxide semiconductor film is included be referred to as [In], [M] and [Zn]。
<structure of 2-2. oxide semiconductor film>
Oxide semiconductor is divided into monocrystalline oxide semiconductor and on-monocrystalline oxide semiconductor.As on-monocrystalline oxide half Conductor for example has CAAC-OS, polycrystalline oxide semiconductor, nano-crystal oxide semiconductor (nc-OS), amorphous-like Oxide semiconductor (a-like OS) and amorphous oxide semiconductor etc..
CAAC-OS has c-axis orientation, and multiple nanocrystalline link on the direction of the face a-b and crystalline texture have distortion. Note that the distortion in CAAC-OS refers to the consistent region of lattice arrangement and lattice arrangement in the region of multiple nanocrystalline connections The part of the direction change of lattice arrangement between other consistent regions.
Although nanocrystalline substantially hexagon, but be not limited to that regular hexagon, the case where not being regular hexagon. In addition, having pentagon and hexagon etc. polygonal nanocrystalline sometimes in distortion.In addition, near the distortion of CAAC-OS Specific crystal boundary is not observed.I.e., it is known that by making lattice arrangement distort, inhibit the formation of crystal boundary.This may be due to CAAC- OS is tolerable because of the following resulting distortion of original: the low-density of the arrangement of the atom on the direction of the face a-b or because of metallic element It is substituted and interatomic bonding distance is made to generate variation etc..
CAAC-OS has the tendency that with layered crystal structure (also referred to as layer structure), in the layered crystal structure middle layer It is laminated with the layer (hereinafter referred to as In layers) comprising indium and oxygen and the layer (hereinafter referred to as (M, Zn) layer) comprising element M, zinc and oxygen.Separately Outside, indium and element M can replace each other, in the case where replacing the element M in (M Zn) layer with indium, which can also be indicated For (In, M, Zn) layer.In addition, the layer can also be expressed as (In, M) in the case where replacing the indium in In layers with element M Layer.
In nc-OS, small region (such as 1nm or more and the region below 10nm, especially 1nm or more and 3nm with Under region) in atomic arrangement have periodically.In addition, nc-OS it is different it is nanocrystalline between do not observe crystalline orientation Regularity.Therefore, orientation is not observed in film entirety.So sometimes nc-OS in certain analysis methods with a-like OS or amorphous oxide semiconductor do not have difference.
A-like OS is the oxide semiconductor with the structure between nc-OS and amorphous oxide semiconductor.a- Like OS includes cavity or density regions.That is, a-like OS is with unstable compared with nc-OS and CAAC-OS Structure.
Oxide semiconductor has various structures and various characteristics.The oxide semiconductor of an embodiment of the invention Also may include amorphous oxide semiconductor, polycrystalline oxide semiconductor, a-like OS, two kinds in nc-OS, CAAC-OS with On.
In addition, the oxide semiconductor film of an embodiment of the invention includes composite oxide semiconductor.Therefore, exist Below in explanation, oxide semiconductor film is known as composite oxide semiconductor sometimes.By using composite oxide semiconductor, The high transistor of available field-effect mobility.Figure 12 A to Figure 14 B shows the oxide comprising composite oxide semiconductor half The schematic diagram of electrically conductive film.
Figure 12 A is the schematic diagram of the top surface (the referred to herein as face a-b direction) of oxide semiconductor film, and Figure 12 B is formed at The schematic diagram in the section (referred to herein as c-axis direction) of the oxide semiconductor film on substrate S ub..
Although Figure 12 A and Figure 12 B show example when being formed with oxide semiconductor film on substrate, of the invention one A embodiment is not limited to this, also could be formed with the insulation such as basilar memebrane or interlayer film between substrate and oxide semiconductor film The others semiconductor film such as film or oxide semiconductor film.
As illustrated in figs. 12 a and 12b, the oxide semiconductor film of an embodiment of the invention be with region A1 and The composite oxide semiconductor of region B1.
Region A1 shown in Figure 12 A and Figure 12 B is [In]: [M]: the In of [Zn]=x:y:z (x > 0, y >=0, z >=0) compared with More regions.Region B1 is [In]: [M]: the In of [Zn]=a:b:c (a > 0, b > 0, c > 0) less region.
In the present specification, the atomic ratio of In and element M in the A1 of region are greater than to the original of the In and element M in the B1 of region Son than the case where referred to as region A1 it is higher than the In concentration of region B1.Therefore, in the present specification, region A1 is also known as In- Region B1 is known as the region In-poor by the region rich.
For example, the In concentration of region A1 is 1.1 times or more of the In concentration of region B1, preferably 2 times to 10 times.Region A1 It is oxide at least containing In, element M and Zn not have to be contained.
In the oxide semiconductor film of an embodiment of the invention, region A1 and region B1 form complex.? That is being easy to happen carrier movement in the A1 of region, it is mobile to be less likely to occur carrier in the regions bl.It therefore, can be with It is special that the oxide semiconductor of an embodiment of the invention is used as the semiconductor that carrier mobility is high and switching characteristic is high The good material of property.
In other words, region A1 is the region that its semiconductive is higher than region B1 lower than region B1 and its electric conductivity.Another party Face, region B1 are that its semiconductive is higher than region A1 and its region for being less electrically conductive than region A1.Here, " semiconductive is high " meaning Taste band gap is wide, switching characteristic is good, is bordering on i type semiconductor etc..
For example, as illustrated in figs. 12 a and 12b, multiple regions A1 (is also claimed on the face a-b direction and c-axis direction with granular For cluster) exist.In addition, cluster can also unevenly and be erratically distributed.Multiple clusters become the state of overlapping or connection sometimes.Example Such as, the sometimes one cluster shape connection Chong Die with other clusters, is observed with the region A1 of the state of cloud form expansion.
In other words, it includes in the regions bl that the semiconductive including the cluster (also referred to as the first cluster) in the A1 of region, which is lower than, Cluster (also referred to as the second cluster), and it includes cluster in the regions bl that its electric conductivity, which is higher than,.On the other hand, it is included in region B1 In the semiconductive of cluster to be higher than include the cluster in the A1 of region, and it is less electrically conductive than including the cluster in the A1 of region.? In above structure, region B1 includes multiple second clusters, and the part being connected to each other including multiple second clusters.In other words, region A1 Included multiple first clusters include the part that one first cluster and another first cluster are connected to each other with cloud form, included by the B1 of region Multiple second clusters include the part that one second cluster and another second cluster are connected to each other with cloud form.
In this way, in the composite oxide semiconductor of an embodiment of the invention, the highly concentrated first area of In Second area (region B1) (region A1) low with the concentration of In is connected with cloud form.In addition, in an embodiment of the invention Composite oxide semiconductor in, first area that In is distributed with high concentration and In not with the second area of high concentration distribution with Cloud form connection.
As illustrated in figs. 12 a and 12b, it is connected to each other on the direction of the face a-b by region A1, region A1 is likely to become electric current Path.Thus, it is possible to improve the electric conductivity of oxide semiconductor film, and the crystal using the oxide semiconductor film can be improved The field-effect mobility of pipe.
In other words, region B1 shown in Figure 12 A and Figure 12 B is spread in the A1 of region.Therefore, region B1 may be by region A1 exists in the state of being clamped in a manner of three-dimensional.That is, region B1 may be deposited in the state of being surrounded by region A1 ?.In other words, region B1 is surrounded by region A1.
In addition, the ratio that region A1 is spread can be adjusted according to the formation condition or composition of composite oxide semiconductor.Example It such as, can be with the composite oxides more than the ratio of the few composite oxide semiconductor of the ratio of forming region A1 or region A1 half Conductor.In addition, the ratio of the region A1 for region B1 in the composite oxide semiconductor of an embodiment of the invention It is not limited to low.In the very high composite oxide semiconductor of ratio of region A1, range according to the observation, sometimes in region Region B1 is formed in A1.In addition, for example, the size that region A1 is formed by granular region can partly be led according to composite oxides The formation condition or composition of body are suitably adjusted.
Figure 13 A and Figure 13 B show the ratio of region A1 lower than the ratio of Figure 12 A and Figure 12 B and region B1 be higher than Figure 12 A and The composite oxide semiconductor of Figure 12 B.
In addition, can also be higher than according to the formation condition or composition of composite oxide semiconductor with the ratio of forming region A1 The ratio of Figure 12 A and Figure 12 B and region B1 are lower than the composite oxide semiconductor of Figure 12 A and Figure 12 B.
Here, the switching characteristic that may cause transistor is disliked in the case where all areas A1 is connected up in the face side a-b Change, such as the off-state current of transistor rises sometimes.Therefore, as shown in figures 13 a and 13b, region A1 is preferably in region B1 Middle distribution.Therefore, region A1 may exist in the state of being clamped in a manner of three-dimensional by region B1.That is, region A1 may exist in the state of being surrounded by region B1.In other words, region A1 is surrounded by region B1.Thus, it is possible to reduce crystal The switching characteristic of pipe, especially reduction off-state current.
In addition, not observing the specific boundary of region A1 Yu region B1 sometimes.In addition, the size of region A1 and region B1 It can be used and evaluated using the EDX surface analysis image of energy dispersion-type X-ray analytic approach (EDX).For example, in cross-section photograph Or in the EDX surface analysis of planar picture, the diameter of the cluster of region A1 is 0.1nm or more and 2.5nm or less sometimes.In addition, cluster Diameter is preferably 0.5nm or more and 1.5nm or less.
In this way, the oxide semiconductor of an embodiment of the invention is composite oxide semiconductor, wherein region A1 Mix with region B1 and have the function of it is complementary play a role it is different.For example, in the In-Ga-Zn oxygen with element M for Ga In the case where compound (hereinafter referred to as IGZO), the oxide semiconductor of an embodiment of the invention can be known as Complementary IGZO (referred to as: C/IGZO).
On the other hand, for example, in the case where region A1 and region B1 are laminated with stratiform, between region A1 and region B1 It does not interact, or does not allow to be also easy to produce interaction, therefore the function of region A1 and the function of region B1 are sometimes only respectively On the spot play a role.At this point, even if since carrier mobility, the off-state current of transistor can be improved in the region A1 of stratiform Sometimes increase.Therefore, by using above-mentioned composite oxide semiconductor or C/IGZO, it can be realized simultaneously carrier mobility height Function and the good function of switching characteristic.This is obtained in the composite oxide semiconductor of an embodiment of the invention The excellent effect obtained.
In addition, region B1 is also possible to have crystalline region.For example, region B1 has CAAC-OS or multiple nanometers It is brilliant.
Figure 14 A is shown in dashed lines multiple nanocrystalline comprising in the regions bl.It is nanocrystalline using hexagon as base Standard, but it is not limited to regular hexagon shape, it is sometimes non-regular hexagon shape.In addition, having when hexagonal crystallization generates distortion When have pentagon and hexagon etc. polygonal nanocrystalline.
In addition, Figure 14 B schematically show it is nanocrystalline there is c-axis orientation, c-axis towards and form the film of CAAC-OS The case where face (being also referred to as formed face) or the substantially perpendicular direction in top surface.CAAC-OS has the layer that c-axis orientation is presented Shape crystalline texture (also referred to as layer structure), and have be laminated with the layer (hereinafter, referred to as In layers) comprising indium and oxygen and The structure of layer (hereinafter, being referred to as (M, Zn) layer) comprising element M, zinc and oxygen.
Note that indium and element M mutually replace sometimes.Therefore, it when replacing the element M of (M, Zn) layer with indium, can indicate For (In, M, Zn) layer.At this point, becoming the layer structure for being laminated with In layers, (In, M, Zn) layer.
<atomic ratio of 2-3. composite oxide semiconductor>
In the following, illustrating the atomic ratio of the element in the composite oxide semiconductor of an embodiment of the invention.
For example, the atomic ratio of each element can when the region A1 in composite oxide semiconductor contains In, element M and Zn To be indicated with the phasor of Figure 15.The atomic ratio of In, element M and Zn are indicated with x:y:z.Here, which can be in Figure 15 It is indicated with coordinate (x:y:z).The ratio of oxygen atom is not shown in Figure 15.
In Figure 15, dotted line is equivalent to expression [In]: [M]: [Zn]=(1+ α): (1- α): 1 atomic ratio (- 1≤α≤1) Line, indicate [In]: [M]: [Zn]=(1+ α): (1- α): the line of 2 atomic ratio indicates [In]: [M]: [Zn]=(1+ α): (1- α): the line of 3 atomic ratio indicates [In]: [M]: [Zn]=(1+ α): (1- α): the line of 4 atomic ratio and expression [In]: [M]: [Zn]=(1+ α): (1- α): the line of 5 atomic ratio.
Chain-dotted line is equivalent to expression [In]: [M]: the line of the atomic ratio (β >=0) of [Zn]=1:1: β indicates [In]: [M]: The line of the atomic ratio of [Zn]=1:2: β indicates [In]: [M]: the line of the atomic ratio of [Zn]=1:3: β indicates [In]: [M]: The line of the atomic ratio of [Zn]=1:4: β indicates [In]: [M]: the line of the atomic ratio of [Zn]=1:7: β indicates [In]: [M]: The line of the atomic ratio of [Zn]=2:1: β and expression [In]: [M]: the line of the atomic ratio of [Zn]=5:1: β.
In addition, shown in figure 15 have [In]: [M]: the atomic ratio of [Zn]=0:2:1 or the oxide of the value near it half Conductor has the tendency for being easy to become spinel-type crystalline texture.
Region A2 shown in figure 15 shows the one of the preferred scope of the atomic ratio of indium, element M and zinc that region A1 is included A example.In addition, region A2 further includes indicating [In]: [M]: [Zn]=(1+ γ): 0:(1- γ) on the line of (- 1≤γ≤1) Atomic ratio.
Region B2 shown in figure 15 shows the one of the preferred scope of the atomic ratio of indium, element M and zinc that region B1 is included A example.Region B2 includes [In]: [M]: [Zn]=4:2:3 to [In]: [M]: [Zn]=4:2:4.1 and its neighbouring value.It is attached Close value is for example [In]: [M]: [Zn]=5:3:4 comprising atomic ratio.Region B2 include [In]: [M]: [Zn]=5:1:6 and its Neighbouring value.
Since the In concentration height of region A2 is so its electric conductivity is higher than region B2, thus has and improve carrier mobility The function of (field-effect mobility).Therefore, using the on state current of the transistor of the oxide semiconductor film with region A1 and Carrier mobility is high.
Since the In concentration of region B2 is low so it is less electrically conductive than region A2, thus the function with reduction leakage current Energy.Therefore, the off-state current using the transistor of the oxide semiconductor film with region B1 is low.
For example, region A1 is preferably on-monocrystalline.In addition, in the case where region A1 has crystalline situation, when region A1 is by indium When formation, it is easy that there is square crystal structure.In addition, in region A1 by indium oxide ([In]: [M]: [Zn]=x:0:0 (x > 0)) structure In the case where, it is easy that there is bixbyite type crystalline texture.In addition, region A1 by In-Zn oxide ([In]: [M]: [Zn]=x:0:z (x > 0, z > 0)) constitute in the case where, be easy have layered crystal structure.
In addition, for example, region B1 is preferably amorphous.In addition, region B1 preferably comprises CAAC-OS.But region B1 is different It is fixed to be made of CAAC-OS, it is possible to have the region of polycrystalline oxide semiconductor and nc-OS etc..
CAAC-OS is the high oxide semiconductor of crystallinity.On the other hand, it can not be confirmed in CAAC-OS specific Crystal boundary, it is possible to say the reduction that the electron mobility due to crystal boundary is less likely to occur.In addition, the crystallization of oxide semiconductor Property sometimes because impurity be mixed into or the generation of defect etc. due tos, reduce, it can be said that CAAC-OS is impurity or defect (Lacking oxygen Deng) few oxide semiconductor.Therefore, by the way that with CAAC-OS, the physical property as composite oxide semiconductor is stablized, So a kind of composite oxide semiconductor with heat resistance and high reliability can be provided.
When forming oxide semiconductor film using sputtering equipment, the atomic ratio of film and target is slightly different.Especially, root Underlayer temperature when according to deposition, the atomic ratio of the atomic ratio likely to be less than [Zn] in target of [Zn] in film.
The characteristic of the composite oxide semiconductor of an embodiment of the invention is not only determined by atomic ratio.Cause This, the region of diagram is the region for showing the atomic ratio that the region A1 and region B1 of composite oxide semiconductor preferably have, Boundary line is indefinite.
<manufacturing method of 2-4. composite oxide semiconductor>
Here, being illustrated to an example of the manufacturing method of composite oxide semiconductor shown in Figure 12 A and Figure 12 B etc.. The composite oxide semiconductor of an embodiment of the invention can be used sputtering equipment and be formed.
[sputtering equipment]
Figure 16 A is the sectional view for illustrating settling chamber 2501 included by sputtering equipment, and Figure 16 B is magnet included by sputtering equipment The plan view of unit 2530a and magnet unit 2530b.
Settling chamber 2501 shown in Figure 16 A include target frame 2520a, target frame 2520b, backing plate 2510a, backing plate 2510b, Target 2502a, target 2502b, component 2542, substrate holder 2570.Target 2502a is configured on backing plate 2510a.Backing plate 2510a Configuration is on target frame 2520a.Magnet unit 2530a is configured at target 2502a across backing plate 2510a.Target 2502b configuration On backing plate 2510b.Backing plate 2510b is configured on target frame 2520b.Magnet unit 2530b is configured across backing plate 2510b in target Under material 2502b.
As shown in Figure 16 A and Figure 16 B, magnet unit 2530a include magnet 2530N1, magnet 2530N2, magnet 2530S and Magnet frame 2532.In magnet unit 2530a, magnet 2530N1, magnet 2530N2 and magnet 2530S configuration are in magnet frame 2532 On.Magnet 2530N1 and magnet 2530N2 are configured in a manner of being spaced apart with magnet 2530S.Magnet unit 2530b has and magnetic The identical structure of iron unit 2530a.When substrate 2560 is moved in settling chamber 2501, substrate 2560 is contacted with substrate holder 2570.
Target 2502a, backing plate 2510a and target frame 2520a and target 2502b, backing plate 2510b and target frame 2520b by Component 2542 separates.Component 2542 is preferably insulator.Note that component 2542 or electric conductor or semiconductor.In addition, structure Part 2542 or the component that electric conductor or semiconductor surface are covered by insulator.
Target frame 2520a and backing plate 2510a is fixed by screw (bolt etc.), is applied same potential.Target frame 2520a tool There is the function across backing plate 2510a support target 2502a.Target frame 2520b and backing plate 2510b is fixed by screw (bolt etc.), It is applied same potential.Target frame 2520b has the function across backing plate 2510b support target 2502b.
Backing plate 2510a has the function of fixed target 2502a.Backing plate 2510b has the function of fixed target 2502b.
In Figure 16 A, show by the magnet unit 2530a magnetic line of force 2580a formed and magnetic line of force 2580b.
As shown in fig 16b, magnet unit 2530a for example, by using by rectangular or general square shape magnet 2530N1, it is rectangular or The magnet 2530N2 of general square shape and rectangular or general square shape magnet 2530S is fixed on the structure of magnet frame 2532.Such as Figure 16 B Arrow shown in, magnet unit 2530a can be swung in the horizontal direction.For example, with 0.1Hz or more and 1kHz bat below Swing magnet unit 2530a.
Magnetic field on target 2502a changes with the swing of magnet unit 2530a.Since the strong region in magnetic field becomes height Density plasma area, so its sputtering phenomenon for being nearby easy to happen target 2502a.Magnet unit 2530b also with this phase Together.
<manufacturing process of 2-5. composite oxide semiconductor>
Then, the manufacturing method of composite oxide semiconductor is illustrated.Figure 17 is the system for illustrating composite oxide semiconductor Make the process flow chart of method.
Composite oxide semiconductor shown in Figure 12 A and Figure 12 B etc. is at least through first to fourth process shown in Figure 17 And it manufactures.
[process of substrate first step: is configured in settling chamber]
First step has the process (referring to Fig.1 7 in step S101) that substrate is configured in settling chamber.
As first step, for example, substrate 2560 is configured substrate holder included by the settling chamber 2501 shown in Figure 16 A 2570。
The temperature of substrate 2560 when deposition influences the electrical property of composite oxide semiconductor.Underlayer temperature is higher, more The crystallinity and reliability of composite oxide semiconductor can be improved.On the other hand, underlayer temperature is lower, can more reduce compound The crystallinity of oxide semiconductor simultaneously improves carrier mobility.Especially, underlayer temperature when deposition is lower, including composite oxygen The raising of the field-effect mobility at grid voltage low (for example, greater than 0V and being 2V or less) of the transistor of compound semiconductor It is more obvious.
The temperature of substrate 2560 can for more than room temperature (25 DEG C) and 200 DEG C hereinafter, preferably more than room temperature and 170 DEG C with Under, more preferably more than room temperature and 130 DEG C or less.Underlayer temperature in above range is adapted for use with the glass substrate of large area The case where (for example, glass substrate of above-mentioned 8th generation to the 10th generation).Especially, when composite oxide semiconductor will be deposited When underlayer temperature when being set as room temperature, in other words, when the heating to substrate without intention property, the change of substrate can be inhibited Shape or bending, so being preferred.
It can use the cooling substrate 2560 such as cooling body that substrate holder 2570 is set.
In addition, by the way that the temperature of substrate 2560 is set as 100 DEG C or more and 130 DEG C hereinafter, combined oxidation can be removed Water in object semiconductor.In this way, by water of the removal as impurity, the raising and reliably of field-effect mobility can be realized simultaneously The raising of property.
The temperature of substrate 2560 is set as 100 DEG C or more and 130 DEG C or less water removals of making a return journey, thus it can be prevented that surplus The strain of sputtering equipment caused by heat.Thus, it is possible to realize the productive raising of semiconductor device.Therefore, productivity becomes It must stablize and be easily guided into full-scale plant, therefore can be with the large-scale display device of extensive substrate easy to manufacture and use.
In addition, the water in composite oxide semiconductor is not only more effectively removed by the temperature for improving substrate 2560, and And the crystallinity of composite oxide semiconductor can be improved.For example, by by the temperature of substrate 2560 be set as 80 DEG C or more and 200 DEG C hereinafter, preferably 100 DEG C or more and 170 DEG C of temperature below, can form the high composite oxides of crystallinity and partly lead Body.
[the second step: the process that gas is imported to settling chamber]
The second step has the process (referring to Fig.1 7 in step S201) that gas is imported to settling chamber.
As the second step, for example, importing gas to settling chamber 2501 shown in Figure 16 A.As the gas, can import Any one of argon gas and carrier of oxygen or two kinds.The inert gases instead of argon body such as helium, krypton and xenon can be used.
Oxygen flow ratio when forming composite oxide semiconductor using carrier of oxygen has following tendency.Oxygen flow ratio is bigger, The crystallinity of composite oxide semiconductor is higher and reliability is higher.On the other hand, oxygen flow ratio is lower, can more reduce compound The crystallinity of oxide semiconductor, and improve carrier mobility.Especially, oxygen flow ratio is lower, includes composite oxides half The raising of the field-effect mobility at grid voltage low (for example, greater than 0V and being 2V or less) of the transistor of conductor is brighter It is aobvious.
Oxygen flow ratio can be suitably set in 0% or more and 100% range below, to obtain corresponding combined oxidation The preferred characteristics of the purposes of object semiconductor.
For example, will be deposited when composite oxide semiconductor is used for the semiconductor layer of the high transistor of field-effect mobility Oxygen flow ratio when composite oxide semiconductor be set as 0% or more and 30% hereinafter, preferably 5% or more and 30% hereinafter, More preferably 7% or more and 15% or less.
In addition, there is the transistor of high field-effect mobility and high reliability in order to obtain, it will deposition composite oxides half Oxygen flow ratio when conductor is set greater than 30% and less than 70%, and preferably greater than 30% and 50% or less.In addition, will deposition Oxygen flow ratio when composite oxide semiconductor be set as 10% or more and 50% hereinafter, preferably 30% or more and 50% with Under.
In addition, the oxygen flow ratio in order to obtain with the transistor of high reliability, when by deposition composite oxide semiconductor It is set as 70% or more and 100% or less.
In this way, underlayer temperature and oxygen flow ratio when by control deposition, can deposit and realize desired electrical characteristics Composite oxide semiconductor.For example, reducing (raising) underlayer temperature and reduction (raising) oxygen flow ratio for field effect mobility The contribution of rate is sometimes same.Thus, for example, even if can't improve enough underlayer temperature because of the limitation of equipment, by improving oxygen Flow-rate ratio also may be implemented with the field-effect mobility same with the field-effect mobility for the transistor for improving underlayer temperature Transistor.
In addition, by reducing oxygen defect or impurity in oxide semiconductor film using method shown in embodiment 1, it can To realize the transistor of high reliablity.
In addition, it is necessary to the high purity of gas when being deposited.For example, as the carrier of oxygen and argon gas that are used as gas Body is -40 DEG C or less, preferably -80 DEG C or less, more preferably -100 DEG C or less, further preferably -120 DEG C using dew point The gas of high-purity below, it is possible thereby to which moisture etc. is prevented to be mixed into composite oxide semiconductor as much as possible.
In addition, it is preferable to use processing of the absorption types such as cryogenic pump vacuum pump to sputtering equipment in settling chamber 2501 Room carries out fine pumping and (is evacuated to 5 × 10-7Pa to 1 × 10-4Pa or so) composite oxides are partly led with removing as much as possible It is the water etc. of impurity for body.Especially, sputtering equipment it is standby when settling chamber 2501 in be equivalent to H2The gas molecule of O The partial pressure of (gas molecule for being equivalent to m/z=18) is preferably 1 × 10-4Pa is hereinafter, more preferably 5 × 10-5Pa or less.
[alive process the third step: is applied to target]
The third step, which has, applies alive process (referring to Fig.1 7 in step S301) to target.
As the third step, for example, applying voltage to target frame 2520a shown in Figure 16 A and target frame 2520b.For example, Being applied to the potential setting of the target frame 2520a terminal V1 connecting is than being applied to the terminal V2 connecting with substrate holder 2570 The low current potential of current potential.For example, being applied to the potential setting of the target frame 2520b terminal V4 connecting is than being applied to and serving as a contrast The low current potential of the current potential for the terminal V2 that chassis 2570 connects.It is applied to the potential setting for the terminal V2 connecting with substrate holder 2570 For earthing potential.The potential setting for being applied to the terminal V3 connecting with magnet frame 2532 is earthing potential.
Note that the current potential for being applied to terminal V1, terminal V2, terminal V3 and terminal V4 is not limited to above-mentioned current potential.It can not To whole application current potentials in target frame 2520, substrate holder 2570, magnet frame 2532.For example, substrate holder 2570 also may be at Electrically floating state.Note that the power electric connection of terminal V1 and the current potential that can control application.As power supply, DC electricity can be used Source, AC power supplies or RF power supply.
In addition, as target 2502a and target 2502b, it is preferable to use including indium, element M (M Al, Ga, Y or Sn), zinc And the target of oxygen.As an example of target 2502a and target 2502b, In-Ga-Zn metal oxide target can be used (In:Ga:Zn=4:2:4.1 [atomic ratio]), In-Ga-Zn metal oxide target (In:Ga:Zn=5:1:7 [atomic ratio]) Deng.Hereinafter, being said to the case where using In-Ga-Zn metal oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) It is bright.
[the fourth step: depositing the process of composite oxide semiconductor on substrate]
The fourth step includes that sputtering particle is popped up from target to deposit the process of composite oxide semiconductor on substrate (referring to figure Step S401 in 17).
As the fourth step, for example, argon gas or carrier of oxygen ionize in the settling chamber 2501 shown in Figure 16 A, point Plasma is formed for cation and electronics.Then, the cation in plasma is because being applied to target frame 2520a, target The current potential of frame 2520b and it is accelerated to target 2502a, target 2502b.Because cation collides In-Ga-Zn metal oxide Target, thus generate sputtering particle and sputtering particle is deposited on substrate 2560.
In addition, being In:Ga:Zn=4:2:4.1 or In:Ga:Zn=5 when using atomic ratio as target 2502a, 2502b: When the In-Ga-Zn metal oxide target of 1:7, sometimes comprising forming different multiple crystal grain in target.For example, very much In the case of, the diameter of multiple crystal grain is 10 μm or less.In addition, for example, including In in In-Ga-Zn metal oxide target Ratio more than crystal grain in the case where, the ratio of above-mentioned zone A1 increases sometimes.
<2-6. sedimentation model>
Then, in the fourth step, it may be considered that sedimentation model shown in Figure 18 A to Figure 18 C.
Figure 18 A to Figure 18 C is the sectional view near target 2502a shown in Figure 16 A.In addition, before Figure 18 A shows use Target state, Figure 18 B show deposition before target state, Figure 18 C show deposition in target state.In addition, Figure 18 A to Figure 18 C shows target 2502a, plasma 2190, cation 2192, sputtering particle 2504a, 2506a etc..
In Figure 18 A, the surface of target 2502a is flatter, and it is uniform to form (for example, ratio of components of In, Ga and Zn). On the other hand, in Figure 18 B, bumps are formed on the surface of target 2502a by the sputter process etc. carried out in advance, and form and produce Raw segregation.The bumps and the segregation may be since the plasma in the sputter process that carries out in advance be (for example, Ar plasma Deng) and generate.In addition, Figure 18 B shows segregation zones 2504 and segregation zones 2506.Here, segregation zones 2504 are comprising more The region (region Ga, Zn-Rich) of the Ga and Zn of amount, segregation zones 2506 are the region (area In-Rich of the In comprising volume Domain).In addition, the reasons why including segregation zones 2504 of Ga of volume as being formed, can enumerate following reason: because Ga's is molten Point is lower than In, and target 2502a is applied heat in corona treatment, and a part of Ga is dissolved and is aggregated, and is consequently formed partially Analyse region 2504.
[first step]
In Figure 18 C, argon gas or carrier of oxygen are ionized, and are divided into cation 2192 and electronics (not shown) and are formed plasma Body 2190.Then, the cation 2192 in plasma 2190 is to target 2502a (here, In-Ga-Zn oxide target material) quilt Accelerate.Because cation 2192 collides In-Ga-Zn oxide target material, sputtering particle 2194, sputtering particle 2194 are generated It is ejected from In-Ga-Zn oxide target material.In addition, having because sputtering particle 2504a is ejected from segregation zones 2504 When formed Ga, Zn-Rich cluster.In addition, being formed sometimes because sputtering particle 2506a is ejected from segregation zones 2506 The cluster of In-Rich.
In addition, in In-Ga-Zn oxide target material, firstly, preferentially sputtering sputtering particle from segregation zones 2504 2504a.This is because following reason: because cation 2192 collides In-Ga-Zn oxide target material, from In-Ga-Zn Oxide target material preferentially pops up the Ga and Zn that its relative atomic mass is lighter than In.It is heavy by the sputtering particle 2504a being ejected Product on substrate, forms region B1 shown in Figure 12 A and Figure 12 B etc..
[second step]
Then, as shown in figure 18 c, sputtering particle 2506a is sputtered from segregation zones 2506.Sputtering particle 2506a is collided in advance Region B1 on substrate is formed, region A1 shown in Figure 12 A and Figure 12 B etc. is consequently formed.
In addition, as shown in figure 18 c, target 2502a continues to be sputtered in deposition, so segregation zones discontinuously occur 2504 generation and the disappearance of segregation zones 2504.
By the way that the first step and second step of above-mentioned sedimentation model, the institutes such as available Figure 12 A and Figure 12 B are repeated The composite oxide semiconductor of an embodiment of the invention shown.
That is sputtering particle (2504a and 2506a) is respectively from the segregation zones of In-Rich 2506 and Ga, Zn-Rich Segregation zones 2504 be ejected and be deposited on substrate.On substrate, the region of In-Rich is connected to each other with cloud form, thus It is likely to form the composite oxide semiconductor of an embodiment of the invention as illustrated in figs. 12 a and 12b.By compound The region of In-Rich is connected to each other in the film of oxide semiconductor with cloud form, uses the transistor of the composite oxide semiconductor With high on state current (Ion) and high field-effect mobility (μ FE).
In this way, In is important in the transistor for meeting high on state current (Ion) and high field-effect mobility (μ FE), Not necessarily have to other metals (for example, Ga etc.).
In addition, above description shows the composite oxide semiconductor for forming an embodiment of the invention using argon gas Model.At this point, may include the Lacking oxygen of volume in composite oxide semiconductor.Include in composite oxide semiconductor When the Lacking oxygen of volume, shallow defect state (also referred to as sDOS) is formed in the composite oxide semiconductor sometimes.When compound When forming sDOS in oxide semiconductor, which becomes carrier traps, causes under on state current and field-effect mobility Drop.
Therefore, in the case where forming composite oxide semiconductor using argon gas, it is preferred that by compound in formation Oxygen is supplied in composite oxide semiconductor after oxide semiconductor, fill up the Lacking oxygen in composite oxide semiconductor and Reduce sDOS.
As the Supply Method of above-mentioned oxygen, for example, following method: after forming composite oxide semiconductor, Heated in the case where wrapping oxygen containing atmosphere；Or corona treatment etc. is carried out in the case where wrapping oxygen containing atmosphere.In addition, can also Partly to be led using the insulating film or composite oxides that are contacted in the composite oxide semiconductor with an embodiment of the invention It include the structure of excess oxygen in insulating film near body.Insulating film includes that the structure of excess oxygen is referred to embodiment 1.
But although explanation utilizes the manufacturing method of sputtering method herein, an embodiment of the invention is not limited to In this, for example, pulse laser deposits (PLD) method, plasma enhanced chemical vapor deposition (PECVD) method, hot CVD Method, ALD method, vacuum vapour deposition etc..As the example of thermal cvd, mocvd method can be enumerated.
<transistor that 2-7. has oxide semiconductor film>
In the following, explanation has the transistor of oxide semiconductor film.
Carrier mobility height and switching characteristic may be implemented by the way that above-mentioned composite oxide semiconductor is used for transistor High transistor.Furthermore it is possible to realize the transistor of high reliablity.
Additionally, it is preferred that the low oxide semiconductor film of carrier density is used for transistor.For example, using carrier density Lower than 8 × 1011/cm3, preferably shorter than 1 × 1011/cm3, more preferably less than 1 × 1010/cm3It and is 1 × 10-9/cm3Above oxygen Compound semiconductor film.
In the case where reducing the carrier density of oxide semiconductor film, the impurity reduced in oxide semiconductor film is dense It spends and reduces defect state density.In this specification etc, the state that impurity concentration is low and defect state density is low is known as " high-purity It is intrinsic " or " substantial high-purity is intrinsic ".Because the oxide semiconductor film that high-purity is intrinsic or substantial high-purity is intrinsic Carrier occurring source is less, and it is possible to reduce carrier density.In addition, because high-purity is intrinsic or substantial high-purity sheet The oxide semiconductor film of sign has lower defect state density, and it is possible to the lower trap density of states.
In addition, be oxidized object semiconductor film trap level capture charge to disappearance take a long time, sometimes as Fixed charge acts like that.Therefore, the crystal of channel region is formed in the high oxide semiconductor of the trap density of states sometimes The electrical characteristics of pipe are unstable.
Therefore, in order to stablize the electrical characteristics of transistor, the impurity concentration reduced in oxide semiconductor film is effective. In order to reduce the impurity concentration in oxide semiconductor film, the impurity concentration in film nearby is preferably also reduced.As impurity have hydrogen, Nitrogen, alkali metal, alkaline-earth metal, iron, nickel, silicon etc..
Here, illustrating the influence of each impurity in oxide semiconductor film.
When oxide semiconductor film includes the silicon or carbon of one of the 14th race's element, defect is formed in oxide semiconductor State.Therefore, the concentration of the silicon near in the oxide semiconductor or interface of oxide semiconductor or carbon (passes through Secondary Ion Mass Spectrometry The concentration that analytic approach (SIMS) measures) it is 2 × 1018atoms/cm3Hereinafter, preferably 2 × 1017atoms/cm3Below.
In addition, forming defect state when oxide semiconductor film includes alkali or alkaline earth metal sometimes and forming current-carrying Son.Therefore, it is easy that there is normally open characteristic using the transistor of the oxide semiconductor film comprising alkali or alkaline earth metal.By This, preferably reduces the concentration of the alkali or alkaline earth metal in oxide semiconductor film.Specifically, being measured using sims analysis Oxide semiconductor film in alkali or alkaline earth metal concentration be 1 × 1018atoms/cm3Hereinafter, preferably 2 × 1016atoms/cm3Below.
When oxide semiconductor film includes nitrogen, the electronics as carrier is generated, and carrier density increases, and aoxidized Object semiconductor is easy by N-shaped.As a result, the transistor for being used for semiconductor containing nitrogen oxide semiconductor is easy to have normal Open type characteristic.It is therefore preferable that the nitrogen in oxide semiconductor is reduced as far as, for example, the oxygen measured using sims analysis Nitrogen concentration in compound semiconductor is less than 5 × 1019atoms/cm3, preferably 5 × 1018atoms/cm3Hereinafter, more preferably 1 ×1018atoms/cm3Hereinafter, further preferably 5 × 1017atoms/cm3Below.
Include that hydrogen in oxide semiconductor film reacts with the oxygen for being bonded to metallic atom and generates water, therefore shape sometimes At Lacking oxygen (Vo).When hydrogen enters the Lacking oxygen (Vo) when, the electronics as carrier is generated sometimes.In addition, sometimes due to hydrogen A part is closed with the oxygen key for being bonded to metallic atom, generates the electronics as carrier.Therefore, using the oxide comprising hydrogen half The transistor of conductor is easy have normally open characteristic.Thus it is preferred to reduce the hydrogen in oxide semiconductor as far as possible.It is specific and Speech, measuring the hydrogen concentration in oxide semiconductor using sims analysis is lower than 1 × 1020atoms/cm3, preferably shorter than 1 × 1019atoms/cm3, more preferably less than 5 × 1018atoms/cm3, even more preferably below 1 × 1018atoms/cm3。
By introducing oxygen into oxide semiconductor film, the Lacking oxygen (V in oxide semiconductor film can be reducedo).It changes Yan Zhi, as the Lacking oxygen (V in oxide semiconductor filmo) when being filled up by oxygen, Lacking oxygen (Vo) disappear.Therefore, by spreading oxygen Into oxide semiconductor film, it is possible to reduce the Lacking oxygen (V of transistoro), so as to improve the reliability of transistor.
As the method for introducing oxygen into oxide semiconductor film, for example, can be in a manner of being contacted with oxide semiconductor The oxide for comprising more than the oxygen of stoichiometric composition is set.That is, being comprised more than it is preferred that being formed in above-mentioned oxide The region of the oxygen of stoichiometric composition (hereinafter also referred to as oxygen excess region).Especially, when oxide semiconductor film is used for crystalline substance When body pipe, by near transistor basilar memebrane or the settings such as interlayer film there is the oxide in oxygen excess region, can reduce The Lacking oxygen of transistor, it is possible thereby to improve the reliability of transistor.
The channel formation region of transistor is used for by the oxide semiconductor film for being decreased sufficiently impurity concentration, it can be with Make transistor that there are stable electrical characteristics.
At least part of present embodiment can be appropriate with other embodiments documented by this specification or embodiment It combines and implements in ground.
(embodiment 3)
In the present embodiment, using Figure 19 to Figure 25 illustrate include the transistor illustrated in the embodiment of front display One example of device.
Figure 19 is the top view for showing an example of display device.Display device 700 shown in Figure 19 includes: that setting exists Pixel portion 702 on first substrate 701；Source electrode drive circuit portion 704 on first substrate 701 and gate driving circuit are set Portion 706；The sealant being arranged in a manner of around pixel portion 702, source electrode drive circuit portion 704 and gate driving circuit portion 706 712；And the second substrate 705 being arranged in the mode opposed with the first substrate 701.Note that by first lining of the sealing of sealant 712 Bottom 701 and the second substrate 705.That is, 706 quilt of pixel portion 702, source electrode drive circuit portion 704 and gate driving circuit portion First substrate 701, sealant 712 and the sealing of the second substrate 705.Although note that not shown in Figure 19, in the first substrate 701 and second are provided with display element between substrate 705.
In addition, being provided in the region not surrounded by sealant 712 on the first substrate 701 in display device 700 It is electrically connected the flexible print circuit (FPC) in pixel portion 702, source electrode drive circuit portion 704 and gate driving circuit portion 706 Portion of terminal 708.In addition, FPC portion of terminal 708 is connected to FPC716, and by FPC716 to pixel portion 702, source drive electricity Road portion 704 and gate driving circuit portion 706 supply various signals etc..In addition, pixel portion 702, source electrode drive circuit portion 704, grid Pole drive circuit 706 and FPC portion of terminal 708 are respectively connect with signal wire 710.Various signals etc. by FPC716 supply are logical It crosses signal wire 710 and is supplied to pixel portion 702, source electrode drive circuit portion 704, gate driving circuit portion 706 and FPC portion of terminal 708.
Alternatively, it is also possible to which multiple gate driving circuit portions 706 are arranged in display device 700.In addition, as display device 700, source electrode drive circuit portion 704 and gate driving circuit portion 706 are formed in identical with pixel portion 702 first although showing Example on substrate 701, but be not limited to that the structure.For example, first only can be formed in gate driving circuit portion 706 On substrate 701, or only source electrode drive circuit portion 704 can be formed on the first substrate 701.It will at this point, can also use The substrate of source electrode drive circuit or gate driving circuit etc. is formed with (for example, being formed by single crystal semiconductor films, polycrystal semiconductor film Driving circuit substrate) be formed in the structure of the first substrate 701.In addition, to the connection side of the driving circuit substrate separately formed Method is not particularly limited, and can be using glass flip chip encapsulation (COG) method, wire bonding method etc..
In addition, pixel portion 702, source electrode drive circuit portion 704 included by display device 700 and gate driving circuit portion 706 include multiple transistors, and the crystal of the semiconductor device of an embodiment of the invention can be applicable in as the transistor Pipe.
In addition, display device 700 may include various elements.As the element, for example, electroluminescent (EL) Element (EL element, organic EL element, inorganic EL devices, LED comprising organic matter and inorganic matter etc.), light-emitting transistor device (according to the transistor of galvanoluminescence), electronic emission element, liquid crystal cell, electronic ink elements, electrophoresis element, the wet member of electricity Part, plasma display panel (PDP), microelectromechanical systems (MEMS), display (such as grating light valve (GLV), number it is micro- Mirror device (DMD), digital micro- shutter (DMS) element, interference modulations (IMOD) element etc.), piezoelectric ceramics display etc..
In addition, an example as the display device for using EL element, there is EL display etc..As using electron emission One example of the display device of element has field-emitter display (FED) or SED mode flat-type display (SED: surface Conduct electron emission display device) etc..As an example of the display device for using liquid crystal cell, there is liquid crystal display (transmission Formula liquid crystal display, semi permeable type liquid crystal display, reflective liquid-crystal display, direct view liquid crystal display, projection-type liquid crystal Display) etc..As an example of the display device for using electronic ink elements or electrophoresis element, there is Electronic Paper etc..Note that When realizing semi permeable type liquid crystal display or when reflective liquid-crystal display, part or all for making pixel electrode has reflection The function of electrode.For example, part or all of pixel electrode is made to include aluminium, silver etc..Also, it at this time can also be with The storage circuits such as SRAM are arranged under reflecting electrode.Thus, it is possible to further decrease power consumption.
It, can be using progressive scan mode or interlace mode etc. as the display mode of display device 700.In addition, As when the color element control within the pixel when colored display, being not limited to RGB, (R indicates red, and G indicates green, B Indicate blue) these three colors.For example, can be made of four pixels of R pixel, G pixel, B pixel and W (white) pixel. Alternatively, as PenTile is arranged a color element can also be constituted by two colors in RGB, and select according to color element Different two colors are constituted.Or it can be to the color of one or more of the additional yellow of RGB, cyan, magenta etc..Separately Outside, the size of the display area of the point of each color element can be different.But disclosed invention is not limited to colored display Display device, and also can be applied to the display device of white and black displays.
In addition, in order to which white light (W) is made to show for backlight (organic EL element, inorganic EL devices, LED, fluorescent lamp etc.) Showing device carries out full-color EL display, and coloring layer (also referred to as optical filter) also can be used.Such as red (R) can be appropriately combined Coloring layer, green (G) coloring layer, blue (B) coloring layer, yellow (Y) coloring layer etc..By using coloring layer, can with do not make Colorrendering quality is further increased with comparing the case where coloring layer.At this point, can also by be arranged include coloring layer region and Do not include the region of coloring layer, by do not include coloring layer region in white light be directly used in display.By being partly arranged It does not include the region of coloring layer, in the bright image of display, can reduce brightness caused by coloring layer sometimes reduces and subtract Few power consumption twenty percent is to three one-tenth or so.But full color is being carried out using self-emission devices such as organic EL element or inorganic EL devices When display, R, G, B, Y, W can also be emitted from the element with each luminescent color.By using self-emission device, sometimes with make Power consumption is further reduced with comparing the case where coloring layer.
In addition, the mode as colorization, in addition to luminous a part from above-mentioned white light is turned through color filter It is changed to except red, green and blue mode (colour filter sheet mode), can also use respectively using red, green and blue Luminous mode (three color modes) and luminous a part from blue light is converted into red or green mode (color Conversion regime or quantum point mode).
In the present embodiment, Figure 20 to Figure 22 is used to illustrate the knot for using liquid crystal cell and EL element as display element Structure.Figure 20 is that the structure of liquid crystal cell is used as display element along the sectional view of chain-dotted line Q-R shown in Figure 19.In addition, Figure 22 is that the structure of EL element is used as display element along the sectional view of chain-dotted line Q-R shown in Figure 19.
In the following, explanatory diagram 20 then illustrates different parts to common ground shown in Figure 22 first.
<explanation of the common ground of 3-1. display device>
Display device 700 shown in Figure 20 to Figure 22 includes: winding wiring portion 711；Pixel portion 702；Source electrode drive circuit portion 704；And FPC portion of terminal 708.In addition, winding wiring portion 711 includes signal wire 710.In addition, pixel portion 702 includes transistor 750 and capacitor 790.In addition, source electrode drive circuit portion 704 includes transistor 752.
Transistor 750 and transistor 752 have structure same as above-mentioned transistor 100D.Transistor 750 and transistor 752 can also be using the structure using other transistors shown in above embodiment.
The transistor used in the present embodiment includes highly purified and Lacking oxygen the repressed oxide of formation half Electrically conductive film.The transistor can reduce off-state current.Therefore, the retention time that can extend the electric signals such as picture signal is opening Write-in interval can also be extended in the state of power supply by opening.Therefore, the frequency of refresh work can be reduced, it is possible thereby to play inhibition The effect of power consumption.
In addition, the transistor used in the present embodiment can obtain higher field-effect mobility, therefore can be into Row high speed operation.For example, by the way that this transistor for being able to carry out high speed operation is used for liquid crystal display device, it can be same The switching transistor of pixel portion and the driving transistor for drive circuit are formed on substrate.That is, because as driving Dynamic circuit does not need separately to use by the semiconductor device of the formation such as silicon wafer, it is possible to reduce the number of components of semiconductor device. In addition, in pixel portion the image of high-quality can also be provided by using the transistor for being able to carry out high speed operation.
Capacitor 790 includes: by identical with the conductive film of first gate electrode is used as included by transistor 750 Conductive film is processed and the lower electrode that is formed；And by be used as source electrode and leakage included by transistor 750 The conductive film of electrode or the identical conductive film of the conductive film for being used as the second gate electrode are processed and the upper electrode that is formed.Separately Outside, it is provided between lower electrode and upper electrode by being formed and to be used as first grid included by transistor 750 exhausted The identical insulating film of the insulating film of velum and the insulating film formed；And it is used as protecting on transistor 750 by being formed The identical insulating film of the insulating film of insulating film and the insulating film formed.That is capacitor 790, which has, will be used as dielectric film Insulating film be clipped in the laminate-type structure between a pair of electrodes.
In addition, it is exhausted to be provided with planarization on transistor 750, transistor 752 and capacitor 790 in Figure 20 into Figure 22 Velum 770.
As planarization insulating film 770, can be used polyimide resin, acrylic resin, polyimide amide resin, Benzocyclobutane olefine resin, polyamide, epoxy resin etc. have the organic material of heat resistance.In addition it is also possible to pass through stacking Multiple insulating films formed using above-mentioned material form planarization insulating film 770.In addition it is also possible to exhausted using planarization is not provided with The structure of velum 770.
It is shown into Figure 22 included by transistor 750 and source electrode drive circuit portion 704 included by pixel portion 702 in Figure 20 Transistor 752 using identical structure transistor structure, but it is not limited to this.For example, pixel portion 702 and source electrode drive Different crystal pipe also can be used in dynamic circuit portion 704.Specifically, pixel portion 702 can be enumerated using the transistor npn npn that interlocks, and Source electrode drive circuit portion 704 is used real using the structure or pixel portion 702 of reciprocal cross shift transistor shown in embodiment 1 Reciprocal cross shift transistor shown in mode 1 is applied, and source electrode drive circuit portion 704 uses the structure etc. for the transistor npn npn that interlocks.In addition, The words and phrases in " source electrode drive circuit portion 704 " can also be replaced with into " gate driving circuit portion ".
The conductive film shape in the same process of signal wire 710 and the source electrode and drain electrode that are used as transistor 750,752 At.As signal wire 710, for example, when using material comprising copper, due to signal delay of routing resistance etc. compared with It is few, and the display of large screen may be implemented.
In addition, FPC portion of terminal 708 includes connection electrode 760, anisotropic conductive film 780 and FPC716.Connection electrode 760 form in the same process with the conductive film of the source electrode and drain electrode that are used as transistor 750,752.In addition, connection electricity Pole 760 is electrically connected with terminal included by FPC716 by anisotropic conductive film 780.
In addition, glass substrate can be used for example as the first substrate 701 and the second substrate 705.In addition, as first Substrate 701 and the second substrate 705, also can be used with substrate flexible.As this with substrate flexible, such as can lift Plastic supporting base etc. out.
In addition, being provided with structural body 778 between the first substrate 701 and the second substrate 705.Structural body 778 is to pass through choosing Columnar spacer obtained from being etched to insulating film to selecting property, for control the first substrate 701 and the second substrate 705 it Between distance (liquid crystal cell thick).In addition, spherical spacer also can be used as structural body 778.
In addition, in 705 side of the second substrate, be provided be used as the photomask 738 of black matrix, be used as colour filter Color film 736, the insulating film 734 contacted with photomask 738 and coloring film 736.
<configuration example that 3-2. has the display device of liquid crystal cell>
Display device 700 shown in Figure 20 includes liquid crystal cell 775.Liquid crystal cell 775 include conductive film 772, conductive film 774 and Liquid crystal layer 776.Conductive film 774 is arranged in 705 side of the second substrate and is used as opposite electrode.Display device shown in Figure 20 700 can change the state of orientation of liquid crystal layer 776 by the voltage by being applied between conductive film 772 and conductive film 774, thus Control light transmission and it is non-transmission and show image.
Conductive film 772 is electrically connected to the conductive film for being used as source electrode and drain electrode possessed by transistor 750.Conductive film 772 are formed on planarization insulating film 770 and are used as pixel electrode, i.e. display element a electrode.In addition, conductive film 772 are used as reflecting electrode.Display device 700 shown in Figure 20 be reflected by conductive film 772 outer light and by coloring film 736 into The so-called Reflexible color LCD of row display.
In addition, the conductive film to visible light with translucency can be used or have to visible light anti-as conductive film 772 The conductive film of penetrating property.As the conductive film to visible light with translucency, for example, it is preferable to using comprising being selected from indium (In), zinc (Zn), the material of one of tin (Sn).As having reflexive conductive film to visible light, for example, it is preferable to using aluminium is included Or the material of silver.In the present embodiment, the conductive film to visible light with reflectivity is used as conductive film 772.
In addition, although Figure 20 shows the knot for connecting conductive film 772 with the conductive film for the drain electrode for being used as transistor 750 Structure, but it is not limited to this.For example, as shown in figure 21, can also use conductive film 772 by being used as leading for connection electrode The structure that electrolemma 777 is electrically connected with the conductive film for the drain electrode for being used as transistor 750.In addition, conductive film 777 by with quilt Process that the identical conductive film of conductive film of the second gate electrode as transistor 750 is processed and formed, it is possible to Conductive film 777 is formed in the case where not increasing manufacturing process.
In addition, display device 700 shown in Figure 20 shows Reflexible color LCD, but it is not limited to this. For example, infiltration type Color Liquid Crystal Display dress may be implemented using the conductive film to visible light with translucency as conductive film 772 It sets.Furthermore it is possible to realize the so-called semi-transparent of combined reflected type color liquid crystal display arrangement and infiltration type color liquid crystal display arrangement Cross type color liquid crystal display arrangement.
Here, Figure 23 shows infiltration type color liquid crystal display arrangement.Figure 23 is cutting along chain-dotted line Q-R shown in Figure 19 Face figure, and Figure 23 is shown as the structure that display element uses liquid crystal cell.In addition, display device 700 shown in Figure 23 is to make For liquid crystal cell driving method using horizontal component of electric field mode (for example, FFS mode) structure an example.Shown in Figure 23 Structure in the case where, be used as being provided with insulating film 773 on the conductive film 772 of pixel electrode, be provided with and lead on insulating film 773 Electrolemma 774.At this point, conductive film 774 has the function of public electrode, can by across insulating film 773 in conductive film 772 and conductive The state of orientation of the electric field controls liquid crystal layer 776 generated between film 774.
Although, can also be respectively in conductive film 772 and conductive film 774 note that not shown in Figure 20 and Figure 23 One or two side contacted with liquid crystal layer 776 be arranged alignment films.Although in addition, not shown in Figure 20 and Figure 23, It is that can also be suitably set optical components such as polarizing member, phase difference component, anti-reflection member (optical substrate) etc..For example, Also the circular polarization using polarization substrate and phase difference substrate can be used.In addition, backlight, sidelight also can be used as light source Deng.
In the case where using liquid crystal cell as display element, thermotropic liquid crystal, low molecular weight liquid crystal, macromolecule can be used Liquid crystal, polymer dispersion type liquid crystal, ferroelectric liquid crystals, anti ferroelectric liquid crystal etc..These liquid crystal materials according to condition show cholesteric phase, Smectic phase, cubic phase, chiral nematic phase, homogeneous are equal.
In addition, the liquid of the presentation blue phase without using alignment films also can be used using Transverse electric-field type It is brilliant.Blue phase is one kind of liquid crystalline phase, and referring to will be from cholesteric transition to homogeneous phase when rising the temperature of cholesteryl liquid crystal The phase occurred before.Because blue phase only occurs within the scope of relatively narrow temperature, it will wherein be mixed with the hand of several wt% or more The liquid-crystal composition for levying reagent is used for liquid crystal layer, to expand temperature range.Due to liquid crystal and chiral reagent comprising blue phase is presented Liquid-crystal composition fast response time, and it is with optical isotropy.Liquid crystal and chiral as a result, comprising presentation blue phase The liquid-crystal composition of reagent does not need orientation process.In addition, because not needing setting alignment films without friction treatment, therefore can To prevent the electrostatic breakdown due to caused by friction treatment, it is possible thereby to reduce the bad of the liquid crystal display device in manufacturing process And breakage.In addition, the view angle dependency that the liquid crystal material of blue phase is presented is small.
In addition, can be used when using liquid crystal cell as display element: turning in twisted-nematic (TN) mode, plane Change (IPS) mode, fringe field conversion (FFS) mode, axial symmetry arrangement micro unit (ASM) mode, optical compensation curved (OCB) Mode, ferroelectric liquid crystal (FLC) mode and Antiferroelectric liquid crystal (AFLC) mode etc..
In addition, common-black type liquid crystal display device also can be used in display device 700, for example, by using vertically oriented (VA) mode Transmission type liquid crystal display device.As vertical alignment mode, several examples can be enumerated, multidomain can be used for example and vertically take To (MVA) mode, vertically oriented configuration (PVA) mode, advanced Extra Vision (ASV) mode etc..
<display device that 3-3. has light-emitting component>
Display device 700 shown in Figure 22 includes light-emitting component 782.Light-emitting component 782 includes conductive film 772, EL layer 786 and leads Electrolemma 788.Display device 700 shown in Figure 22 is shone by EL layer 786 included by light-emitting component 782, can show image. In addition, EL layer 786 has the inorganic compounds such as organic compound or quantum dot.
As the material that can be used for organic compound, fluorescent material or phosphorescent material etc. can be enumerated.In addition, making For the material that can be used for quantum dot, colloidal quantum dot, alloy-type quantum dot, core-shell type quantum point, caryogram quantum can be enumerated Point etc..Alternatively, it is also possible to use the groups of elements for including the 12nd race and the 16th race, the 13rd race and the 15th race or the 14th race and the 16th race Material.Alternatively, can be used comprising cadmium (Cd), selenium (Se), zinc (Zn), sulphur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), the quanta point material of the elements such as gallium (Ga), arsenic (As), aluminium (Al).
In the display device 700 shown in Figure 22, insulating film is provided on planarization insulating film 770 and conductive film 772 730.A part of the covering conductive film 772 of insulating film 730.Light-emitting component 782 uses top emission structure.Therefore, conductive film 788 With translucency and penetrate the light of the transmitting of EL layer 786.Although note that exemplify top emission structure in the present embodiment, But it is not limited to this.For example, it is also possible to be applied to the bottom-emission structure or conductive film of 772 side of conductive film transmitting light The both sides of 788 side of 772 sides and conductive film emit the both-side emission structure of light.
In addition, being provided with coloring film 736 on the position Chong Die with light-emitting component 782, and Chong Die with insulating film 730 Photomask 738 is provided in position, winding wiring portion 711 and source electrode drive circuit portion 704.738 quilt of coloring film 736 and photomask Insulating film 734 covers.Space between light-emitting component 782 and insulating film 734 is filled by sealing film 732.Although note that exemplifying The structure of coloring film 736 is set in the display device 700 shown in Figure 22, but be not limited to that this.For example, passing through difference It is coated with the structure for being not provided with coloring film 736 can also be used when forming EL layer 786.
<configuration example that input/output unit is arranged in 3-4. in a display device>
Alternatively, it is also possible to which input/output unit is arranged in the display device 700 shown in Figure 22 and Figure 23.As the input and output Device is for example, touch screen etc..
Figure 24 shows the structure to the setting touch screen 791 of display device 700 shown in Figure 22.Figure 25 is shown to shown in Figure 23 Display device 700 be arranged touch screen 791 structure.
Figure 24 is the sectional view that touch screen 791 is arranged in the display device 700 shown in Figure 22, and Figure 25 is shown in Figure 23 Display device 700 in be arranged touch screen 791 sectional view.
Firstly, touch screen 791 shown in following explanatory diagram 24 and Figure 25.
Touch screen 791 shown in Figure 24 and Figure 25 is the so-called In- being arranged between the second substrate 705 and coloring film 736 Cell type touch screen.Touch screen 791 is formed in 705 side of the second substrate before forming coloring film 736.
Touch screen 791 include photomask 738, insulating film 792, electrode 793, electrode 794, insulating film 795, electrode 796, absolutely Velum 797.For example, can detecte out between electrode 793 and electrode 794 by close to the test objects such as finger or screen touch pen The variation of capacitor.
In addition, the top of transistor 750 shown in Figure 24 and Figure 25 shows the cross part of electrode 793, electrode 794.Electricity Pole 796 passes through the opening portion being arranged in insulating film 795 and is electrically connected with two electrodes 793 for clamping electrode 794.In addition, scheming The region that electrode 796 is shown provided in 24 and Figure 25 is arranged in structure in pixel portion 702, but an implementation of the invention Mode is not limited to this, such as can also be formed in source electrode drive circuit portion 704.
The region Chong Die with photomask 738 is arranged in electrode 793 and electrode 794.In addition, as shown in figure 24, electrode 793 is excellent Choosing is arranged in a manner of not Chong Die with light-emitting component 782.In addition, as shown in figure 25, electrode 793 preferably with not with liquid crystal cell The mode of 775 overlappings is arranged.In other words, electrode 793 has in the region Chong Die with light-emitting component 782 and liquid crystal cell 775 and opens Oral area.That is, electrode 793 has mesh shape.By using this structure, electrode 793 can have do not interdict it is luminous The structure for the light that element 782 is emitted.Alternatively, electrode 793 also can have the knot for not interdicting the light through liquid crystal cell 775 Structure.Therefore, because because caused by configuration touch screen 791 brightness decline it is few, it is possible to realize that visibility is high and power consumption obtains To reduced display device.In addition, electrode 794 also can have identical structure.
Electrode 793 and electrode 794 be not due to Chong Die with light-emitting component 782, so electrode 793 and electrode 794 can be used The low metal material of the transmitance of visible light.Alternatively, electrode 793 and electrode 794 be due to Chong Die with liquid crystal cell 775, so The low metal material of transmitance of visible light can be used in electrode 793 and electrode 794.
Therefore, compared with the electrode for the oxide material for using the transmitance of visible light high, electrode 793 and electricity can be reduced The resistance of pole 794, it is possible thereby to improve the transducer sensitivity of touch screen.
For example, conducting nanowires also can be used in electrode 793,794,796.The diameter average value of the nano wire can be 1nm or more and 100nm hereinafter, preferably 5nm or more and 50nm hereinafter, more preferably 5nm or more and 25nm or less.In addition, making The metal nanometer lines or carbon nanotube etc. such as Ag nano wire, Cu nano wire, Al nano wire can be used for above-mentioned nano wire.For example, In the case where using Ag nano wire as any or all in electrode 793,794,796,89% or more can be realized More than visible light transmittance and 40 Ω/sq. and 100 Ω/sq. sheet resistance value below.
Although showing the structure of In-Cell type touch screen, an embodiment of the invention in Figure 24 and Figure 25 It is not limited to this.For example, it is also possible to using the so-called On-Cell type touch screen being formed in display device 700 or fit in aobvious Showing device 700 and the so-called Out-Cell type touch screen used.
In this way, the display device of an embodiment of the invention can be used with the touch screen combinations of various modes.
At least part of present embodiment can be appropriate with other embodiments documented by this specification or embodiment It combines and implements in ground.
(embodiment 4)
In the present embodiment, referring to Figure 26 A and Figure 26 B and Figure 27 to the semiconductor device of an embodiment of the invention into Row explanation.
<structure example of 4-1. semiconductor device>
Figure 26 A is the top view of the semiconductor device 190 of an embodiment of the invention, and Figure 26 B is equivalent to shown in Figure 26 A The sectional view of chain-dotted line A1-A2.In addition, Figure 26 B includes section and crystal on direction channel length (L) of transistor Tr1 Section on direction channel length (L) of pipe Tr2.Figure 27 is equivalent to the sectional view along chain-dotted line B1-B2 shown in Figure 26 A. In addition, Figure 27 includes the section on direction channel width (W) of transistor Tr1.
In addition, in Figure 26 A, for convenience's sake, omit the constituent element of semiconductor device 190 a part (by with Make the insulating film etc. of gate insulating film) and constituent element symbol a part.Note that in the vertical view of semiconductor device below Also a part of a part of constituent element and the symbol of constituent element is omitted in figure in the same manner as Figure 26 A sometimes.
Semiconductor device 190 shown in Figure 26 A and Figure 26 B includes: transistor Tr1；And its at least part and crystal The transistor Tr2 of pipe Tr1 overlapping.In addition, transistor Tr1 and transistor Tr2 are the transistors of bottom grating structure.
The region to be overlapped each other by least part of setting transistor Tr1 and transistor Tr2, can reduce transistor Configuration area.
Transistor Tr1 includes: the conductive film 104 on substrate 102；Insulating film 106 on substrate 102 and conductive film 104；Absolutely Oxide semiconductor film 108 on velum 106；Conductive film 112a on oxide semiconductor film 108；Oxide semiconductor film Conductive film 112b on 108；Insulating film 114 on oxide semiconductor film 108, conductive film 112a and conductive film 112b；Insulation Insulating film 116 on film 114；And the conductive film 122c on insulating film 116.
In addition, transistor Tr2 includes: conductive film 112b；Insulating film 114 on conductive film 112b；It is exhausted on insulating film 114 Velum 116；Oxide semiconductor film 128 on insulating film 116；Conductive film 122a on oxide semiconductor film 128；Oxide Conductive film 122b on semiconductor film 128；Insulating film on oxide semiconductor film 128, conductive film 122a and conductive film 122b 124；Insulating film 126 on insulating film 124；And the conductive film 130 on insulating film 126.In addition, conductive film 130 passes through to be formed Opening portion 182 in insulating film 124,126 is connect with conductive film 122a.
In addition, as shown in Figure 26 A and Figure 26 B, oxide semiconductor film 108 and oxide semiconductor film 128 partly that This overlapping.In addition, as shown in Figure 26 A and Figure 26 B, it is preferred that be formed in the oxide semiconductor film 108 of transistor Tr1 Channel region do not overlap each other with the channel region in the oxide semiconductor film 128 for being formed in transistor Tr2.
In the case where the channel region of the channel region of transistor Tr1 and transistor Tr2 overlaps each other, in any one crystalline substance When body pipe works, another transistor is adversely affected sometimes.It, can be using increase crystal in order to avoid the negative effect The structure at the interval between pipe Tr1 and transistor Tr2 or the knot that conductive film is set between transistor Tr1 and transistor Tr2 Structure etc..But using the former structure, the thickness of semiconductor device becomes larger, thus, for example filling by semiconductor Set 190 be formed in flexible substrate etc. it is upper when, influence bendability etc. sometimes.In addition, using the structure of the latter, sometimes Generate the increase for forming the process number of conductive film and the thickness of with using the former structure the case where same semiconductor device The problem of becoming larger.
On the other hand, in the semiconductor device of an embodiment of the invention 190, by transistor Tr1 and transistor Tr2 is overlappingly configured, and the channel region of each transistor is not arranged overlappingly.In addition, by the way that channel region will be formed A part of each oxide semiconductor film configures overlapping one another, can suitably reduce the configuration area of transistor.
In addition, oxide semiconductor film 108 and oxide semiconductor film 128 all comprising In, M (M Al, Ga, Y or Sn) and Zn.For example, the atom that preferably all there is the atom ratio of In to be greater than M for oxide semiconductor film 108 and oxide semiconductor film 128 The region of ratio.But the semiconductor device of an embodiment of the invention is not limited to this, can also use with In The region of the structure in the region of atom ratio of the atom ratio less than M or atom ratio of the atom ratio equal to M with In Structure.
Moreover it is preferred that the composition of oxide semiconductor film 108 it is identical as the composition of oxide semiconductor film 128 or Person is roughly the same.When the composition of oxide semiconductor film 108 is identical as the composition of oxide semiconductor film 128, can reduce Manufacturing cost.But the semiconductor device of an embodiment of the invention is not limited to this, oxide semiconductor film 108 Composition can be different from the composition of oxide semiconductor film 128.
By making atom of the atom ratio of oxide semiconductor film 108 and oxide semiconductor film 128 with In greater than M The field-effect mobility of transistor Tr1 and transistor Tr2 can be improved in the region of ratio.
In addition, semiconductor device 190 shown in Figure 26 A and Figure 26 B can be suitably used for the pixel circuit of display device, It is configured by using shown in Figure 26 A and Figure 26 B, the pixel density of display device can be improved.For example, even if display device Pixel density is more than 1000ppi (pixel per inch) or 2000ppi, is configured by using shown in Figure 26 A and Figure 26 B, It can also be improved the aperture opening ratio of pixel.Note that ppi refers to the unit for indicating the pixel number of per inch.
In addition, in the case where semiconductor device 190 shown in Figure 26 A and Figure 26 B is used for the pixel of display device, example The channel length (L) and channel width (W) or the line width of the wiring and electrode that connect with transistor of transistor can such as be made Etc. larger.For example, by the way that at least part of transistor Tr1 and transistor Tr2 are overlapped as shown in Figure 26 A and Figure 26 B Ground configuration can increase line width etc. compared with the case where transistor Tr1 and transistor Tr2 is arranged on the same plane, So the uneven of characteristic size can be reduced.
Furthermore, it is possible to be used in conjunction between transistor Tr1 and transistor Tr2 any of conductive film and insulating film or Two, it is possible to reduce mask number or process number.
For example, conductive film 104 is used as first gate electrode in transistor Tr1, conductive film 112a is used as source electrode, Conductive film 112b is used as drain electrode, and conductive film 122c is used as the second gate electrode.In addition, in transistor Tr1, insulating film 106 are used as first grid insulating film, and insulating film 114,116 is used as second grid insulating film.In addition, in transistor Tr2, Conductive film 112b is used as first gate electrode, and conductive film 122a is used as source electrode, and conductive film 122b is used as drain electrode, conductive Film 130 is used as the second gate electrode.In addition, insulating film 114,116 is used as first grid insulating film, absolutely in transistor Tr2 Velum 124,126 is used as second grid insulating film.
Note that in this specification etc, insulating film 106 being known as the first insulating film sometimes, insulating film 114,116 is known as Insulating film 124,126 is known as third insulating film by the second insulating film.
In addition, insulating film 134 is arranged on conductive film 130, insulating film 136 is set on insulating film 134.In addition, exhausted The opening portion 184 for reaching conductive film 130 is formed in velum 134,136.In addition, conductive film 138 is arranged on insulating film 136.Separately Outside, 138 opening 184 of conductive film is connect with conductive film 130.
In addition, insulating film 140, EL layer 150, conductive film 144 are arranged on conductive film 138.Insulating film 140 covers conductive film A part of 138 side end, and have the function of preventing conductive film 138 from generating short circuit between adjacent pixel.In addition, EL Layer 150 has the function of emitting light.In addition, constituting light-emitting component 160 by conductive film 138, EL layer 150, conductive film 144.It is conductive Film 138 is used as an electrode of light-emitting component 160, and conductive film 144 is used as another electrode of light-emitting component 160.
As described above, the semiconductor device of an embodiment of the invention has the laminated construction of multiple transistors, contracting The configuration area of small crystals pipe.In addition, by being used in conjunction with any of insulating film and conductive film between multiple transistors Or two, it is possible to reduce mask number or process number.
In addition, transistor Tr1 and transistor Tr2 include two gate electrodes as shown in Figure 26 A and Figure 26 B.
Here, Figure 26 A and Figure 26 B and Figure 27 is illustrated the effect for the structure for including two gate electrodes.
As shown in figure 27, it is used as the conductive film 122c opening 181 of the second gate electrode and is used as first grid electricity The conductive film 104 of pole is electrically connected.Therefore, identical current potential is supplied in conductive film 104 and conductive film 122c.In addition, such as Figure 27 institute Show, oxide semiconductor film 108 is located at the position opposite with conductive film 104 and conductive film 122c, and is clipped in and is used as gate electrode Two conductive films between.Length in the channel width dimension of conductive film 104 and conductive film 122c is both greater than oxide and partly leads Length in the channel width dimension of body film 108, the entirety of oxide semiconductor film 108 is across 106,114,116 quilt of insulating film Conductive film 104 and conductive film 122c covering.
In other words, conductive film 104 and conductive film 122c are in the opening portion 181 being formed in insulating film 106,114,116 Connection, and there is the region in the outside positioned at the side end of oxide semiconductor film 108.By using above structure, Ke Yili Oxide semiconductor film 108 included by transistor Tr1 is surrounded with the electric field electricity of conductive film 104 and conductive film 122c.In other words, Transistor Tr1 has S-Channel structure.
Note that although the structure for connecting first gate electrode with the second gate electrode is described above, the knot of transistor Structure is not limited to this.For example, transistor Tr2 as shown in fig. 26b is such, can also use makes to be used as leading for the second gate electrode The structure that electrolemma 130 is electrically connected with the conductive film 122a of the source electrode or drain electrode that are used as transistor Tr2.
<constituent element of 4-2. semiconductor device>
In the following, the constituent element for being included to the semiconductor device of present embodiment is described in detail.Note that and embodiment The same structure of structure shown in 1 is indicated by the same numbers and omits detailed description.
[conductive film]
It, can be with as conductive film 122a, conductive film 122b, conductive film 122c, conductive film 130, conductive film 138 and conductive film 144 Using with conductive film 104, conductive film 112a, 112b and the same material of conductive film 120a, 120b.
Conductive film 122a, conductive film 122b, conductive film 122c, conductive film 130, conductive film 138 and conductive film 144 can make With the oxide comprising indium and tin, the oxide comprising tungsten and indium, the oxide comprising tungsten and indium and zinc, the oxygen comprising titanium and indium Compound, the oxide comprising indium and zinc, the oxide comprising silicon and indium and tin, includes indium at the oxide comprising titanium and indium and tin It is formed with oxide conductors (OC) such as the oxides of gallium and zinc.
Especially, above-mentioned oxide conductor (OC) is suitable for conductive film 130.
[insulating film]
As insulating film 124, insulating film 126 and insulating film 134, can be used and insulating film 106, insulating film 114 and insulating film 116 same materials.
Moreover it is preferred that with either one or two of oxide semiconductor film 108 and oxide semiconductor film 128 The insulating film of contact is oxide insulating film, and it is more than the region of stoichiometric composition that the oxide insulating film, which has oxygen content, (excess oxygen region).In other words, the oxide insulating film with excess oxygen region can discharge oxygen.
For example, the above-mentioned oxide insulating film with excess oxygen region can be formed as follows: under oxygen atmosphere Form insulating film；The insulating film after formation is heated under oxygen atmosphere；Or the insulating film after formation is added Oxygenation.As the method to the insulating film addition oxygen after formation, preferably by corona treatment.
In addition, silicon nitride shape can be used in the insulating film for being used as the gate insulating film of transistor Tr1 and transistor Tr2 At.In the case where being used as the insulating film of gate insulating film using silicon nitride formation, following effect is played.With silica phase Than, the relative dielectric constant of silicon nitride is higher and larger in order to obtain thickness required for the static capacity equal with silica, It is thus possible to increase the thickness of insulating film.Therefore, under can be by inhibiting the insulation of transistor Tr1 and transistor Tr2 pressure-resistant It drops and improves insulation pressure resistance to inhibit the electrostatic breakdown of transistor Tr1 and transistor Tr2.
In addition, insulating film 114,116,124,126 has to oxide semiconductor film 108 and oxide semiconductor film 128 Either one or two of supply oxygen function.That is, insulating film 114,116,124,126 includes oxygen.In addition, insulating film 114, 124 be the insulating film that oxygen can be made to penetrate.Note that insulating film 114 is also act as alleviating when forming insulating film 116 below to oxygen The film of damage caused by compound semiconductor film 108, insulating film 124 are also act as alleviating when forming insulating film 126 below to oxygen The film of damage caused by compound semiconductor film 128.
As insulating film 114,124, can be used with a thickness of 5nm or more and 150nm hereinafter, preferably 5nm or more and 50nm silicon oxide film below, silicon oxynitride film etc..
Furthermore it is preferred that make the defects of insulating film 114,124 amount it is less, it is typical that by ESR measure due to silicon The spin density of dangling bonds and the signal occurred at g=2.001 is preferably 3 × 1017spins/cm3Below.This is because if The defect concentration of insulating film 114,124 is high, and oxygen is then bonded with the defect, and reduces the transit dose of the oxygen in insulating film 114.
It is formed in addition, insulating film 114,124 can be used due to the low oxide insulating film of the density of states of nitrogen oxides. Note that energy (the E of the top of valence band of oxide semiconductor film should be formed in sometimes due to the density of states of nitrogen oxidesV_OS) with Energy (the E at the conduction band bottom of oxide semiconductor filmC_OS) between.As above-mentioned oxide insulating film, nitrogen oxides can be used The few silicon oxynitride film or nitrogen oxides of burst size the few oxynitriding aluminium film etc. of burst size.
In addition, the few silicon oxynitride film of the burst size of nitrogen oxides is ammonia burst size in thermal desorption spec-troscopy (TDS) analytic approach (TDS) Than nitrogen oxides burst size more than film, typically the burst size of ammonia be 1 × 1018/cm3Above and 5 × 1019/cm3Below. Note that the temperature that above-mentioned ammonia burst size is heat treatment in TDS be 50 DEG C or more and 650 DEG C or less or 50 DEG C or more and The total amount for the ammonia being released in 550 DEG C or less of range.In addition, above-mentioned ammonia burst size is to be scaled the total of amino molecule in TDS Amount.
Insulating film 134 has the function of the protection insulating film of transistor Tr1 and transistor Tr2.
Insulating film 134 includes either one or two of hydrogen and nitrogen.In addition, insulating film 134 includes nitrogen and silicon.In addition, absolutely Velum 134 has the function of that oxygen, hydrogen, water, alkali metal, alkaline-earth metal etc. can be stopped.By the way that insulating film 134, Neng Goufang is arranged Block is diffused into outside from oxide semiconductor film 108 and oxide semiconductor film 128, and can prevent insulating film 114, 116,124,126 oxygen for being included are diffused into outside, additionally it is possible to prevent hydrogen, water etc. from outside intrusion oxide semiconductor film 108, In 128.
As insulating film 134, nitride insulation film can be used for example.As the nitride insulation film, there are silicon nitride, nitrogen Silica, aluminium nitride, aluminum oxynitride etc..
Insulating film 136 and insulating film 140 have the function of making flat due to the bumps of transistor etc. etc..Insulating film 136 As long as and insulating film 140 has insulating properties, is formed using inorganic material or organic material.It, can be with as the inorganic material Enumerate silicon oxide film, silicon oxynitride film, silicon oxynitride film, silicon nitride film, pellumina, aluminium nitride film etc..As organic material Material, for example, the photoresists material such as acrylic resin or polyimide resin.
[oxide semiconductor film]
As oxide semiconductor film 128, material same as oxide semiconductor film 108 can be used.
[EL layers]
EL layer 150 has light-emitting function, and includes at least light-emitting component.In addition, EL layer 150 also wraps other than the luminescent layer Include the functional layers such as hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer.Low molecule can be used in EL layer 150 Compound and high-molecular compound.
At least part of present embodiment can be appropriate with other embodiments documented by this specification or embodiment It combines and implements in ground.
(embodiment 5)
In the following, referring to the display of Figure 28 and Figure 29 semiconductor device for illustrating to be used for an embodiment of the invention The example of the display panel of the display unit of device etc..Display panel exemplified below be include reflective LCD element and shine member Two kinds of elements of part and the display panel that can be shown with the both of which through mode and reflective-mode.
<structure example of 5-1. display panel>
Figure 28 is the stereoscopic schematic diagram of the display panel 600 of an embodiment of the invention.Display panel 600 includes by substrate 651 structures to fit together with substrate 661.In Figure 28, it is represented by dotted lines substrate 661.
Display panel 600 includes display unit 662, circuit 659 and wiring 666 etc..Substrate 651 be for example provided with circuit 659, It is routed 666 and the conductive film 663 for being used as pixel electrode etc..In addition, Figure 28 show be equipped on substrate 651 IC673 and The example of FPC672.As a result, structure shown in Figure 28 can be described as include display panel 600, FPC672 and IC673 display mould Block.
As circuit 659, the circuit as scan line drive circuit can be used for example.
Wiring 666 has the function to display unit and 659 suppling signal of circuit or electric power.The signal or electric power from the outside through Wiring 666 is input to by FPC672 or from IC673.
Figure 28 such as shows in the way of COG at the example for substrate 6651 being arranged IC673.It is used for example, can be applicable in IC673 Make the IC of scan line drive circuit or signal-line driving circuit.In addition, when display panel 600 has as scan line drive circuit Or the circuit of signal-line driving circuit, or will act as the circuit setting of scan line drive circuit or signal-line driving circuit outside Portion and by FPC672 input be used to drive display panel 600 signal when, IC673 can also be not provided with.Alternatively, it is also possible to incite somebody to action IC673 is installed on FPC672 in the way of thin membrane flip chip encapsulation (COF) etc..
Figure 28 shows the enlarged drawing of a part of display unit 662.Multiple displays are configured in display unit 662 with rectangular Conductive film 663 included by element.Here, conductive film 663 has the function of reflecting visible light and is used as following liquid crystal cells 640 reflecting electrode.
In addition, as shown in figure 28, conductive film 663 includes opening.It furthermore include hair in 651 side of the substrate of conductive film 663 Optical element 660.The light for carrying out self-emission device 660 is emitted to 661 side of substrate through the opening of conductive film 663.
<5-2. cross section structure example>
Figure 29 shows a part in the region including FPC672 in display panel illustrated by Figure 28, the area including circuit 659 The example in the section of a part in domain and a part in the region including display unit 662.
Display panel includes insulating film 620 between substrate 651 and substrate 661.In addition, in substrate 651 and insulating film 620 Between include light-emitting component 660, transistor 601, transistor 605, transistor 606 and coloring layer 634 etc..In addition, in insulating film It include liquid crystal cell 640, coloring layer 631 etc. between 620 and substrate 661.In addition, substrate 661 is across adhesive layer 641 and insulating film 620 bondings, substrate 651 are bonded across adhesive layer 642 and insulating film 620.
Transistor 606 is electrically connected with liquid crystal cell 640, and transistor 605 is electrically connected with light-emitting component 660.Because of crystal Pipe 605 and transistor 606 are formed on the face of 651 side of substrate of insulating film 620, so they can pass through the same process Manufacture.
Substrate 661 is provided with coloring layer 631, photomask 632, insulating layer 621 and the common electrical for being used as liquid crystal cell 640 The conductive film 613 of pole, alignment films 633b, insulating layer 617 etc..Insulating layer 617 is used as the unit for keeping liquid crystal cell 640 The spacer in gap.
651 side of substrate of insulating film 620 is provided with insulating film 681, insulating film 682, insulating film 683, insulating film 684, the insulating layers such as insulating film 685.A part of insulating film 681 is used as the gate insulating layer of each transistor.Insulating film 682, Insulating film 683 and insulating film 684 are arranged in a manner of covering each transistor etc..In addition, insulating film 685 is to cover insulating film 684 Mode be arranged.Insulating film 684 and insulating film 685 have the function of planarization layer.In addition, shown here as covering transistor Deng insulating layer include the case where three layers of insulating film 682, insulating film 683 and insulating film 684, but insulating layer is not limited to This, or four layers or more, single layer or two layers.If it is not required, then the insulating film as planarization layer can be not provided with 684。
In addition, transistor 601, transistor 605 and transistor 606 include part of it be used as grid conductive film 654, its A part is used as the conductive layer 652 of source electrode or drain electrode, semiconductor film 653.Here, being obtained to the processing by same conductive film The multiple layers arrived have identical hacures.
Liquid crystal cell 640 is reflective LCD element.Liquid crystal cell 640 includes being laminated with conductive film 635, liquid crystal layer 612 And the laminated construction of conductive film 613.It is led in addition, being provided with the reflection visible lights of 651 1 side contacts of substrate of conductive film 635 Electrolemma 663.Conductive film 663 includes opening 655.In addition, conductive film 635 and conductive film 613 include the material for making visible light-transmissive. In addition, be provided with alignment films 633a between liquid crystal layer 612 and conductive film 635, and liquid crystal layer 612 and conductive film 613 it Between be provided with alignment films 633b.In addition, being provided with polarizing film 656 on the face in the outside of substrate 661.
In liquid crystal cell 640, conductive film 663 has the function of reflecting visible light, and conductive film 613, which has, penetrates visible light Function.It is polarized from the light of 661 side of substrate incidence by polarizing film 656, through conductive film 613, liquid crystal layer 612, and it is conductive Film 663 reflects.Moreover, being again passed through liquid crystal layer 612 and conductive film 613 and reaching polarizing film 656.At this point, by being applied to conduction The orientation of voltage control liquid crystal between film 663 and conductive film 613, so as to control the optical modulation of light.That is, can To control the intensity of the light emitted by polarizing film 656.Further, since the light except specific wavelength region is by coloring layer 631 It absorbs, therefore red is for example presented in the light being extracted.
Light-emitting component 660 is bottom emissive type light-emitting component.Light-emitting component 660 has from 620 side of insulating film successively layer It is laminated with the structure of conductive layer 643, EL layer 644 and conductive layer 645b.In addition, being provided with the conductive layer of covering conductive layer 645b 645a.Conductive layer 645b includes the material of reflection visible light, and conductive layer 643 and conductive layer 645a include the material for making visible light-transmissive Material.The light that light-emitting component 660 is emitted injects to lining by coloring layer 634, insulating film 620, opening 655 and conductive film 613 etc. 661 side of bottom.
Here, as shown in figure 29, opening 655 is preferably provided with the conductive film 635 through visible light.As a result, liquid crystal with It is also orientated in the same manner as other regions in the region of 655 overlapping of opening, so as to inhibit because of the border portion generation in the region The orientation of liquid crystal is bad and generates the light leakage being not intended to.
It, can also be with here, the polarizing film 656 in the face as the outside that substrate 661 is arranged in, can be used linear polarization piece Use circular polarizing disk.As circular polarizing disk, can be used for example by linear polarization piece and quarter-wave phase plate stacking and At polarizing film.Thus, it is possible to inhibit external light reflection.In addition, by being used for liquid crystal cell 640 according to the adjustment of the type of polarizing film Cell gap, orientation, the driving voltage of liquid crystal cell etc. realize desired contrast.
Insulating film 647 is provided on the insulating film 646 of the end of covering conductive layer 643.Insulating film 647, which has, inhibits exhausted The function of the excessively close separation material of the distance between velum 620 and substrate 651.In addition, when using shadowing mask (metal mask) shape When at EL layer 644 and conductive layer 645a, insulating film 647 can have the function of inhibiting the shadowing mask to be contacted with the face of being formed. In addition, if you do not need to can then be not provided with insulating film 647.
643 electricity of conductive layer by conductive layer 648 and light-emitting component 660 in the source electrode and drain electrode of transistor 605 Connection.
One in the source electrode and drain electrode of transistor 606 is electrically connected by interconnecting piece 607 with conductive film 663.Conductive film 635 It is contacted with conductive film 663, they are electrically connected to each other.Here, interconnecting piece 607 be make to be arranged in insulating film 620 it is two-sided on lead The part that electric layer is electrically connected to each other by the opening being formed in insulating film 620.
Interconnecting piece 604 is provided in substrate 651 and the nonoverlapping region of substrate 661.Interconnecting piece 604 passes through articulamentum 649 are electrically connected with FPC672.Interconnecting piece 604 has structure identical with interconnecting piece 607.Expose on the top surface of interconnecting piece 604 The conductive layer obtained is processed to the conductive film same with conductive film 635.Therefore, can make to connect by articulamentum 649 Portion 604 is electrically connected with FPC672.
Interconnecting piece 687 is provided in the region of a part for being provided with adhesive layer 641.In interconnecting piece 687, pass through company Junctor 686 makes a part of electricity of the conductive layer for being processed to obtain to the conductive film same with conductive film 635 and conductive film 613 Connection.Thus, it is possible to which the signal or current potential inputted from the FPC672 for being connected to 651 side of substrate is supplied by interconnecting piece 687 To the conductive film 613 for being formed in 661 side of substrate.
For example, conducting particles can be used in connector 686.As conducting particles, metal material can be covered with using surface The particle of the organic resin or silica of material etc..As metal material, it is preferable to use nickel or gold, because it can reduce contact Resistance.Additionally, it is preferred that using the particle covered by two or more metal materials with stratiform such as by nickel and the grain of gold covering Son.In addition, connector 686 is preferably using the material for capableing of flexible deformation or plastic deformation.At this point, the connection of conducting particles sometimes Body 686 becomes the shape being crushed in the longitudinal direction as shown in Figure 29.By having the shape, connector 686 can be increased With the contact area for the conductive film for being electrically connected to the connector, the problems such as so as to reduce contact resistance and inhibit poor contact Occur.
Connector 686 is preferably configured in a manner of being covered by adhesive layer 641.For example, connector 686 can be dispersed in solid Adhesive layer 641 before change.
In Figure 29, as the example of circuit 659, it is shown provided with the example of transistor 601.
In Figure 29, as transistor 601 and the example of transistor 605, channel is formed with using being clipped by two grids Semiconductor film 653 structure.One grid is made of conductive film 654, and another grid by across insulating film 682 with partly lead The conductive film 623 that body film 653 is overlapped is constituted.By using this structure, it can control the threshold voltage of transistor.At this point, Same signal can be supplied by two grids of connection and to two grids to drive transistor.Compared with other transistors, This transistor can be improved field-effect mobility, and can increase on state current.Height is able to carry out as a result, it is possible to manufacture The circuit of speed work.Furthermore the occupied area of circuit portion can be reduced.By using the high transistor of on state current, even if Make display panel enlargement or cloth line number increases when high resolution, can also reduce the signal delay of each wiring, and can be with Inhibit the uneven of display.
Transistor included by transistor included by circuit 659 and display unit 662 also can have identical structure.This Outside, multiple transistors included by circuit 659 can structure all having the same or different structures.In addition, 662 institute of display unit Including multiple transistors can structure all having the same or different structures.
Cover at least one of insulating film 682 and insulating film 683 of each transistor use of water is preferred or the impurity such as hydrogen not It is easy the material of diffusion.I.e., it is possible to which insulating film 682 or insulating film 683 are used as barrier film.It by using this structure, can be with It effectively inhibits impurity to be diffused into transistor from outside, so as to realize the display panel of high reliablity.
661 side of substrate is provided with the insulating layer 621 of covering coloring layer 631, photomask 632.Insulating layer 621 can have There is the function of planarization layer.The surface general planar that can make conductive film 613 by using insulating layer 621, can make liquid crystal layer 612 state of orientation becomes uniform.
The example of the method for manufacture display panel 600 is illustrated.For example, include peeling layer support substrate on according to Secondary formation conductive film 635, conductive film 663 and insulating film 620 form transistor 605, transistor 606 and light-emitting component 660 etc., Then substrate 651 and support substrate are bonded using adhesive layer 642.Later, by the interface of peeling layer and insulating film 620 and stripping The interface of absciss layer and conductive film 635 is removed, and support substrate and peeling layer are removed.In addition, in addition preparing to be pre-formed The substrate 661 of chromatograph 631, photomask 632, conductive film 613 etc..Moreover, dripping liquid crystal to substrate 651 or substrate 661, and by gluing It closes layer 641 and is bonded substrate 651 and substrate 661, so as to manufacture display panel 600.
As peeling layer, can properly select in the material for generating removing with the interface of insulating film 620 and conductive film 635 Material.In particular, as peeling layer, the layer using the high melting point metal materials comprising tungsten etc. and the oxide comprising the metal material Layer lamination, and be laminated with multiple silicon nitrides, silicon oxynitride, nitrogen oxygen preferably as 620 use of insulating film on peeling layer The layer of SiClx etc..When high melting point metal materials are used for peeling layer, the layer formed after forming peeling layer can be improved Formation temperature, so as to reduce impurity concentration and realize the display panel of high reliablity.
As conductive film 635, it is preferable to use the oxides such as metal oxide or metal nitride or nitride.Using gold Belong to oxide when, by the concentration and Lacking oxygen amount of hydrogen concentration, boron concentration, phosphorus concentration, nitrogen concentration and other impurities at least One material higher than the semiconductor layer for transistor is used for conductive film 635.
<5-3. each component>
In the following, illustrating above-mentioned each component.In addition, omitting has the function of and same function shown in above embodiment The explanation of structure.
[adhesive layer]
As each adhesive layer, the Photocurable adhesives such as ultraviolet curing adhesive, reaction solidification adhesive, heat cure can be used The various solidification adhesives such as adhesive, anaerobic adhesive.As these adhesives, can enumerate epoxy resin, acrylic resin, Silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl alcohol contracting fourth Aldehyde) resin, EVA (ethylene-vinyl acetate) resin etc..Particularly preferably using low materials of penetrability such as epoxy resin.In addition, Also two liquid hybrid resins can be used.In addition it is also possible to use adhesive sheet etc..
In addition, also may include desiccant in above-mentioned resin.It is, for example, possible to use (the oxidations of the oxide of alkaline-earth metal Calcium or barium monoxide etc.) such substance for passing through chemisorption adsorption moisture.Pass through alternatively, zeolite or silicone etc. also can be used Physical absorption carrys out the substance of adsorption moisture.When in resin including desiccant, it is able to suppress the impurity such as moisture and enters element, from And the reliability of display panel is improved, so being preferred.
In addition, scattering component by the high filler of the blended refractive index in above-mentioned resin or light, light extraction effect can be improved Rate.It is, for example, possible to use titanium oxide, barium monoxide, zeolite, zirconiums etc..
[articulamentum]
As articulamentum, anisotropic conductive film (ACF), anisotropic conductive cream (ACP) etc. can be used.
[coloring layer]
As the material that can be used in coloring layer, metal material, resin material, the resinous wood comprising pigments or dyes can be enumerated Material etc..
[light shield layer]
As the material that can be used in light shield layer, black carbon black, titanium, metal, metal oxide or comprising multiple metals can be enumerated The composite oxides etc. of the solid solution of oxide.Light shield layer may be the film comprising resin material or comprising the inorganic material such as metal The film of material.Alternatively, it is also possible to the stack membrane to light shield layer using the film of the material comprising coloring layer.For example, can be using packet The film of material containing the coloring layer for penetrating the light of some color and include the coloring for penetrating the light of other colors The laminated construction of the film of the material of layer.By keeping coloring layer identical as the material of light shield layer, in addition to identical device can be used In addition, process can also be simplified, be therefore preferred.
It is the explanation about each component above.
<5-4. manufacturing method example>
Here, being illustrated to the example for the manufacturing method for using the display panel with substrate flexible.
Here, will include optical components and the insulating layers such as display element, circuit, wiring, electrode, coloring layer and light shield layer Deng layer be collectively referred to as element layer.For example, element layer includes display element, it in addition to this can also include being electrically connected with display element Wiring, for elements such as the transistors of pixel or circuit.
In addition, here, support component layer in the stage of (manufacturing process terminates) will be completed in display element and there is flexibility Component be known as substrate.For example, substrate also includes that it is below very thin thin with a thickness of 10nm or more and 300 μm in its range Film etc..
As the method for forming element layer on there is substrate that is flexible and having insulating surface, typically there is the following two kinds Method.One method is the method for directly forming element layer on substrate.Another method is served as a contrast in the support different from substrate Resolution element layer is with support substrate and by element layer transposition in the method for substrate after forming element layer on bottom.In addition, not having herein It is discussed in detail, but other than above-mentioned two method, also there are as below methods: forming element on no substrate flexible Layer makes the substrate is thinning the substrate is made to have method flexible by polishing etc..
When constituting the heating in formation process of the material of substrate to element layer has heat resistance, if on substrate directly Element layer is formed, then process can be made to simplify, so being preferred.At this point, if in the state that substrate is fixed on support substrate Element layer is formed, then the transmission in device and between device can be made to become easy, so being preferred.
In addition, being formed when using by element layer on the support substrate afterwards by its transposition when the method for substrate, exist first Peeling layer and insulating layer are laminated in support substrate, forms element layer on which insulating layer.Then, by element layer and support substrate it Between carry out removing and by element layer transposition in substrate.At this point, selection the interface of support substrate material and peeling layer, peeling layer with Peeling-off material in the interface of insulating layer or peeling layer.In the above-mentioned methods, by the way that high heat resistance to be used for Support substrate and peeling layer, the upper limit of the temperature applied when can be improved to form element layer, so as to be formed including higher The element layer of the element of reliability, so being preferred.
For example, it is preferable that using the layer comprising high melting point metal materials such as tungsten as peeling layer and comprising the metal material The lamination of the layer of the oxide of material uses the multiple silicon oxide layers of stacking, silicon nitride layer, oxynitriding as the insulating layer on peeling layer The layer of silicon layer, silicon oxynitride layer etc..
As the method removed between element layer and support substrate, for example, following method: applying mechanical The method of strength；The method for etching peeling layer；And make Liquid Penetrant to the method at removing interface；Deng.Furthermore it is possible to pass through benefit With the difference for two layers of thermal expansion coefficient for forming removing interface, support substrate is heated or cooled and is removed.
In addition, when peeling layer can be not provided with when the interface of support substrate and insulating layer is removed.
For example, it is also possible to use glass as support substrate, the organic resins such as polyimides are used as insulating layer.This When, it can also locally be heated by using a part to organic resin such as laser, or by using sharp keen Component physically cuts off or punches a part of organic resin etc. to form the starting point of removing, thus in glass and organic resin Interface removed.When using photosensitive material as above-mentioned organic resin, the shape of opening easy to form etc., so being excellent Choosing.Above-mentioned laser for example be preferably luminous ray to ultraviolet light wavelength region light.It is, for example, possible to use wavelength to be 200nm or more and 400nm are hereinafter, preferably 250nm or more and 350nm light below.It especially, is 308nm when using wavelength Excimer laser, productivity is improved, so being preferred.Alternatively, it is also possible to the third used as Nd:YAG laser The wavelength of harmonic wave is the solids UV laser (also referred to as semiconductor UV laser) such as the UV laser of 355nm.
Alternatively, it is also possible to which heating layer is arranged between support substrate and the insulating layer being made of organic resin, by this Heating layer is heated, and is thus removed at the interface of the heating layer and insulating layer.As heating layer, it can be used and pass through electricity Stream flows through a variety of materials such as the material of fever, the material by absorbing light fever, the material by applying magnetic field fever.For example, As the material of heating layer, the material in semiconductor, metal and insulator can be used.
In the above-mentioned methods, the insulating layer being made of organic resin can be used as substrate after being removed.
It is the explanation to the manufacturing method of flexible display panels above.
At least part of present embodiment can be appropriate with other embodiments documented by this specification or embodiment It combines and implements in ground.
(embodiment 6)
In the present embodiment, using Figure 30 A to Figure 30 C illustrate include an embodiment of the invention semiconductor device Display device.
<circuit structures of 6. display devices>
Display device shown in Figure 30 A includes: the region (hereinafter referred to as pixel portion 502) of the pixel with display element；Configuration In 502 outside of pixel portion and with the circuit portion (hereinafter referred to as drive circuit 504) for driving the circuit of pixel；With guarantor The circuit (hereinafter referred to as protection circuit 506) of the function of protection element；And portion of terminal 507.In addition it is also possible to be not provided with protection electricity Road 506.
Part or all of drive circuit 504 is preferably formed as on the same substrate with pixel portion 502.Thus, it is possible to Reduce the quantity of component and the quantity of terminal.When part or all of drive circuit 504 is not formed in together with pixel portion 502 When on one substrate, part or all of drive circuit 504 can be installed by COG or tape-automated bonding (TAB).
Pixel portion 502 includes being configured to X row (natural number that X is 2 or more) Y column (natural number that Y is 2 or more) for driving Multiple display elements circuit (hereinafter referred to as pixel circuit 501), drive circuit 504 include output be used to select pixel The circuit (hereinafter referred to as gate drivers 504a) of signal (scanning signal) and supply are used to drive the display element in pixel The driving circuits such as the circuit (hereinafter referred to as source electrode driver 504b) of signal (data-signal).
Gate drivers 504a has shift register etc..Gate drivers 504a is received by portion of terminal 507 to be used to drive The signal and output signal of dynamic shift register.For example, gate drivers 504a is entered initial pulse signal, clock signal etc. And output pulse signal.Wiring (the hereinafter referred to as scan line GL_1 that there is gate drivers 504a control scanning signal is supplied To the function of the current potential of GL_X).Alternatively, it is also possible to which multiple gate drivers 504a are arranged, and pass through multiple gate drivers 504a is individually controlled scan line GL_1 to GL_X.Alternatively, gate drivers 504a has the function of supplying initializing signal.But It is that not limited to this, gate drivers 504a can also supply other signals.
Source electrode driver 504b has shift register etc..Source electrode driver 504b is received by portion of terminal 507 to be used to drive The signal of dynamic shift register and from the signal (picture signal) for wherein obtaining data-signal.Source electrode driver 504b has basis Picture signal generates the function of being written to the data-signal of pixel circuit 501.In addition, source electrode driver 504b have according to due to Pulse signal that the input of initial pulse signal, clock signal etc. generates controls the function of the output of data-signal.In addition, source Wiring (the function of the current potential of hereinafter referred to as data line DL_1 to DL_Y) that there is driver 504b control data-signal is supplied Energy.Alternatively, source electrode driver 504b has the function of supplying initializing signal.But not limited to this, source electrode driver 504b Other signals can be supplied.
Source electrode driver 504b is for example constituted using multiple analog switches etc..Source electrode driver 504b is more by successively making A analog switch is opened and can export and carry out the obtained signal of time segmentation as data-signal to picture signal.In addition, Also shift register etc. can be used and constitute source electrode driver 504b.
By one of multiple scan line GL that scanning signal is supplied and number is supplied respectively in pulse signal and data-signal It is believed that number one of multiple data line DL be input into multiple pixel circuits 501 each.In addition, gate drivers 504a is controlled Make the write-in and holding of the data-signal in each of multiple pixel circuits 501.For example, pulse signal passes through scan line GL_m (m is X natural number below) is input into the pixel circuit 501 that m row n-th arranges, data-signal root from gate drivers 504a M is input into from source electrode driver 504b by data line DL_n according to the current potential of scan line GL_m (n is Y natural number below) The pixel circuit 501 that row n-th arranges.
Protection circuit 506 shown in Figure 30 A is for example connected to as between gate drivers 504a and pixel circuit 501 The scan line GL of wiring.Alternatively, protection circuit 506 is connected to as the cloth between source electrode driver 504b and pixel circuit 501 The data line DL of line.Alternatively, protection circuit 506 can connect the wiring between gate drivers 504a and portion of terminal 507.Or Person, protection circuit 506 can connect the wiring between source electrode driver 504b and portion of terminal 507.In addition, portion of terminal 507 is Refer to the part being provided with for from external circuit to the terminal of display device input electric power, control signal and picture signal.
Protection circuit 506 is to make the wiring and other in the current potential supplied except a certain range wiring connected to it The circuit be connected between wiring.
As shown in fig. 30 a, by can be improved aobvious to pixel portion 502 and the setting protection circuit 506 of drive circuit 504 Patience of the showing device to the overcurrent generated by static discharge (ESD) etc..But the structure of circuit 506 is protected to be not limited to This, for example, it is also possible to using by gate drivers 504a and the structure that connect of protection circuit 506 or by source electrode driver 504b with The structure for protecting circuit 506 to connect.Alternatively, can also be using the structure for connecting portion of terminal 507 with protection circuit 506.
Drive circuit is formed by gate drivers 504a and source electrode driver 504b in addition, though showing in Figure 30 A 504 example, but not limited to this.For example, it is also possible to which only forming gate drivers 504a and installing the formation in addition prepared has The substrate (for example, the driving circuit substrate formed by single crystal semiconductor films or polycrystal semiconductor film) of source electrode drive circuit.
In addition, multiple pixel circuits 501 shown in Figure 30 A for example can be using structure shown in Figure 30 B.
Pixel circuit 501 shown in Figure 30 B includes liquid crystal cell 570, transistor 550 and capacitor 560.Can will before Transistor shown in the embodiment in face is suitable for transistor 550.
One current potential in a pair of electrodes of liquid crystal cell 570 is suitably set according to the specification of pixel circuit 501.Root According to the state of orientation for the data setting liquid crystal cell 570 being written into.In addition it is also possible to each to multiple pixel circuits 501 A supply common potential in a pair of electrodes of possessed liquid crystal cell 570.In addition, to the pixel circuit in a row The current potential of the supply of one of a pair of electrodes of liquid crystal cell 570 possessed by 501 can be different to the pixel circuit in another row The current potential of the supply of one of a pair of electrodes of liquid crystal cell 570 possessed by 501.
For example, following mode: TN mould also can be used in the driving method as the display device for including liquid crystal cell 570 Formula；STN mode；VA mode；ASM mode；Ocb mode；FLC mode；AFLC mode；MVA mode；PVA mode；IPS mode； FFS mode or transverse curvature orientation (TBA) mode etc..In addition, the driving method as display device, in addition to above-mentioned driving method Except, there are also electrically conerolled birefringence (ECB) mode, polymer dispersed liquid crystals (PDLC) mode, polymer network liquid crystal (PNLC) moulds Formula, host and guest's mode etc..But it is not limited to this, as liquid crystal cell and its driving method can be used various liquid crystal cells and Driving method.
In the pixel circuit 501 that m row n-th arranges, one in the source electrode and drain electrode of transistor 550 and data line DL_n electrical connection, another electrode in a pair of electrodes of another in source electrode and drain electrode with liquid crystal cell 570 are electrically connected It connects.The gate electrode of transistor 550 is electrically connected with scan line GL_m.Transistor 550 has the function of controlling the write-in of data-signal.
An electrode in a pair of electrodes of capacitor 560 and wiring (the hereinafter referred to as current potential supply line that current potential is supplied VL it) is electrically connected, another electrode is electrically connected with another electrode in a pair of electrodes of liquid crystal cell 570.In addition, according to pixel The specification of circuit 501 suitably sets the current potential of current potential supply line VL.The storage for the data that there is capacitor 560 storage to be written into The function of capacitor.
For example, passing through gate driving shown in Figure 30 A in the display device for including pixel circuit 501 shown in Figure 30 B Device 504a successively selects the pixel circuit 501 of each row, and transistor 550 is made to open and data-signal is written.
When transistor 550 is closed, the pixel circuit 501 for being written into data becomes hold mode.By pressing row successively Above-mentioned steps are carried out, can show image.
Multiple pixel circuits 501 shown in Figure 30 A for example can be using structure shown in Figure 30 C.
Pixel circuit 501 shown in Figure 30 C includes transistor 552,554, capacitor 562 and light-emitting component 572.It can be with Transistor application shown in embodiment by front is in transistor 552 and/or transistor 554.
One in the source electrode and drain electrode of transistor 552 is electrically connected to the wiring that data-signal is supplied (hereinafter, claiming For signal wire DL_n).Also, the gate electrode of transistor 552, which is electrically connected to, to be supplied the wiring of grid signal and (hereinafter referred to as sweeps Retouch line GL_m).
Transistor 552 has the function of controlling the write-in of data-signal.
An electrode in a pair of electrodes of capacitor 562 is electrically connected to wiring (the hereinafter referred to as current potential that current potential is supplied Supply line VL_a), another electrode is electrically connected to another in the source electrode and drain electrode of transistor 552.
Capacitor 562 has the function of the storage for the data that storage is written into.
One in the source electrode and drain electrode of transistor 554 is electrically connected to current potential supply line VL_a.Also, transistor 554 gate electrode is electrically connected to another in the source electrode and drain electrode of transistor 552.
One in the anode and cathode of light-emitting component 572 is electrically connected to current potential supply line VL_b, another is electrically connected to Another in the source electrode and drain electrode of transistor 554.
As light-emitting component 572, organic electroluminescent device (also referred to as organic EL element) etc. can be used for example.Note Meaning, light-emitting component 572 are not limited to organic EL element, the inorganic EL devices being made of inorganic material also can be used.
In addition, one in current potential supply line VL_a and current potential supply line VL_b is supplied high power supply potential VDD, another Low power supply potential VSS is supplied.
For example, passing through gate driving shown in Figure 30 A in the display device for including pixel circuit 501 shown in Figure 30 C Device 504a successively selects the pixel circuit 501 of each row, and transistor 552 is made to open and data-signal is written.
When transistor 552 is closed, the pixel circuit 501 for being written into data becomes hold mode.Also, flow through crystal The magnitude of current between the source electrode and drain electrode of pipe 554 is controlled according to the current potential of the data-signal of write-in, light-emitting component 572 with Intensity LEDs corresponding to the magnitude of current flowed through.Follow the above steps by pressing OK, image can be shown.
At least part of present embodiment can be appropriately combined with other embodiments documented by this specification and Implement.
(embodiment 7)
In the present embodiment, referring to Figure 31 to Figure 34 B to the aobvious of the semiconductor device for including an embodiment of the invention Show that module, electronic equipment are illustrated.
<7-1. display module>
Display module 7000 shown in Figure 31 includes the touch screen for being connected to FPC7003 between upper cover 7001 and lower cover 7002 7004, display panel 7006, backlight 7007, frame 7009, printed circuit board 7010, the battery 7011 of FPC7005 are connected to.
Such as the semiconductor device of an embodiment of the invention can be used for display panel 7006.
Upper cover 7001 and lower cover 7002 can suitably change shape according to the size of touch screen 7004 and display panel 7006 Shape or size.
Touch screen 7004 can be resistive touch panel or capacitive touch screen, and can be formed and display surface Plate 7006 is overlapped.In addition it is also possible to which making the opposed substrate (seal substrate) of display panel 7006 has the function of touch screen.Separately Outside, optical sensor can also be set in each pixel of display panel 7006, and forms optical touch screen.
Backlight 7007 has light source 7008.Although note that exemplifying the configuration light source 7008 in backlight 7007 in Figure 31 Structure, but it is not limited to this.For example, light source 7008 can be arranged in the end of backlight 7007, and use light diffusing sheet.When When using the emissive types light-emitting component such as organic EL element, or whens using reflection-type panel etc., it can use and be not provided with carrying on the back The structure of light 7007.
Frame 7009 also has other than having the function of protecting display panel 7006 to be used to interdict because of printed circuit board 7010 work and the function of the electromagnetic shielding of electromagnetic wave of generating.In addition, frame 7009 also can have the function of heat sink.
Printed circuit board 7010 has power circuit and for exporting the signal processing of vision signal and clock signal electricity Road., not only can be using external commercial power supply as the power supply to power circuit supply electric power, but also can separately be set using utilizing The power supply for the battery 7011 set.When using commercial power supply, it is convenient to omit battery 7011.
In addition, the components such as polarizer, phase difference board, prismatic lens can also be arranged in display module 7000.
<7-2. electronic equipment 1>
In addition, Figure 32 A to Figure 32 E shows an example of electronic equipment.
Figure 32 A is the outside drawing for being equipped with the camera 8000 of view finder 8100.
Camera 8000 includes framework 8001, display unit 8002, operation button 8003, shutter release button 8004 etc..In addition, according to Camera 8000 is equipped with removably camera lens 8006.
Here, camera 8000 has the structure that can be dismantled lower camera lens 8006 from framework 8001 and exchange, camera lens 8006 It can also be formed one with framework.
By pressing shutter release button 8004, camera 8000 can be imaged.In addition, display unit 8002 is used as touching Screen, can also be imaged by touch display part 8002.
The framework 8001 of camera 8000 include embedded device with electrode, in addition to can be connect with view finder 8100 with Outside, it can also be connect with flash unit etc..
View finder 8100 includes framework 8101, display unit 8102 and button 8103 etc..
Framework 8101 includes the embedded device for being fitted to the embedded device of camera 8000, view finder 8100 can be installed to photograph Camera 8000.In addition, the embedded device includes electrode, can will be shown to from camera 8000 by received image of the electrode etc. On display unit 8102.
Button 8103 is used as power knob.By utilizing button 8103, the display or non-of display unit 8102 can be switched Display.
The display device of an embodiment of the invention can be adapted for the display unit 8002 of camera 8000 and find a view The display unit 8102 of device 8100.
In addition, in Figure 32 A, camera 8000 and view finder 8100 be separate and dismountable electronic equipment, but The view finder for having display device can be built-in in the framework 8001 of camera 8000.
In addition, Figure 32 B is the figure for showing the appearance of head-mounted display 8200.
Head-mounted display 8200 includes mounting portion 8201, lens 8202, main body 8203, display unit 8204 and cable 8205 Deng.In addition, being built-in with battery 8206 in mounting portion 8201.
By cable 8205, electric power is supplied to main body 8203 from battery 8206.Main body 8203 has wireless receiver etc., Can by received image data etc. image information display to display unit 8204 on.In addition, being arranged by utilizing in main body The movement of the eyeball and eyelid of cameras capture user in 8203, and the coordinate of the viewpoint according to information calculating user, The viewpoint of user be can use as input method.
Alternatively, it is also possible to the position contacted by user to mounting portion 8201, multiple electrodes are set.Main body 8203 can also To have the electric current for flowing through electrode and detecting the movement according to the eyeball of user, the function of the viewpoint of user is identified Energy.In addition, main body 8203 can have the electric current by detecting to flow through the electrode to monitor the function of the pulse of user.Peace Dress portion 8201 can have the various sensors such as temperature sensor, pressure sensor, acceleration transducer, it is possible to have will make The biological information of user is shown in the function on display unit 8204.In addition, main body 8203 also can detecte out the head of user Movement etc., and synchronously make the image change being shown on display unit 8204 with the movement on the head of user etc..
The display device of an embodiment of the invention can be applicable in display unit 8204.
Figure 32 C, Figure 32 D and Figure 32 E are the figures for showing the appearance of head-mounted display 8300.Head-mounted display 8300 includes frame Body 8301, display unit 8302, band-like setting tool 8304 and a pair of lens 8305.
User can see the display on display unit 8302 by camera lens 8305.Preferably, bending configuration display unit 8302.Display unit 8302 is configured by bending, user can experience high realism.Note that in the present embodiment, exemplifying The structure of one display unit 8302 is set, but it is not limited to this, such as can also be using the knot of two display units 8302 of setting Structure.At this point, the Three-dimensional Display using parallax can be carried out when each display unit to be configured to each eyes side in user Deng.
The display device of an embodiment of the invention can be suitable for display unit 8302.Because including of the invention The display device of the semiconductor device of one embodiment has high resolution ratio, so even if using as Figure 32 E Camera lens 8305 amplifies, and user can not also be made to see pixel and can show the higher image of presence.
<7-3. electronic equipment 2>
Then, Figure 33 A to Figure 33 G shows the example of the electronic equipment different from electronic equipment shown in Figure 32 A to Figure 32 E.
Electronic equipment shown in Figure 33 A to Figure 33 G includes framework 9000, display unit 9001, loudspeaker 9003, operation key (sensor, which has, measures following factor for 9005 (including power switch or Operation switches), connection terminal 9006, sensor 9007 Function: power, displacement, position, speed, acceleration, angular speed, revolving speed, distance, light, liquid, magnetic, temperature, chemical substance, sound, Time, hardness, electric field, electric current, voltage, electric power, radiation, flow, humidity, gradient, vibration, smell or infrared ray), Mike Wind 9008 etc..
Electronic equipment shown in Figure 33 A to Figure 33 G has various functions.Such as, it is possible to have the following functions: by various letters Breath (still image, dynamic image, character image etc.) is shown in the function on display unit；The function of touch panel；Display calendar, The function of date or time etc.；Pass through the function using various softwares (program) control processing；The function of carrying out wireless communication；It is logical It crosses using wireless communication function and is connected to the function of various computer networks；By utilizing wireless communication function, carry out various The function of sending or receiving of data；It reads the program that is stored in storage medium or data comes that it will be shown on display unit Function；Deng.Note that the function that electronic equipment shown in Figure 33 A to Figure 33 G can have is not limited to the above functions, and can have There are various functions.In addition, though it is not shown in Figure 33 A to Figure 33 G, but electronic equipment may include multiple display units.This Outside, camera etc. can also be set in the electronic equipment and makes it have following function: shoot the function of still image；Shooting The function of dynamic image；It stores the captured image in storage medium (exterior storage medium or the storage for being built in camera Medium) in function；Display the captured image the function on display unit；Deng.
In the following, explaining electronic equipment shown in Figure 33 A to Figure 33 G in detail.
Figure 33 A is the perspective view for showing television equipment 9100.It can be by e.g. 50 inches or more or 100 inches or more Large-scale display unit 9001 is assembled into television equipment 9100.
Figure 33 B is the perspective view for showing portable data assistance 9101.Portable data assistance 9101 is for example with phone One of mechanical, electrical sub- notebook and information reading device etc. or a variety of functions.Specifically, intelligent hand can be used as Machine.In addition, loudspeaker, connection terminal, sensor etc. has can be set in portable data assistance 9101.In addition, portable information Terminal 9101 can be by text and image information display on its multiple face.For example, three operation buttons 9050 (can also be claimed For handle icon or only it is known as icon) it is shown on a face of display unit 9001.Furthermore it is possible to will be indicated by dashed rectangle Information 9051 is shown on another face of display unit 9001.In addition, the example as information 9051, can enumerate prompt and receive The display of information from Email, social networking service (SNS) or phone etc.；The title of Email or SNS etc.；Electronics Sender's name of mail or SNS etc.；Date；Time；Electricity；And antenna receiving intensity etc..Alternatively, letter can shown Display operation button 9050 etc. replace information 9051 on the position of breath 9051.
Figure 33 C is the perspective view for showing portable data assistance 9102.Portable data assistance 9102, which has, shows information Show the function on three or more of display unit 9001 faces.Distinguish here, showing information 9052, information 9053, information 9054 The example being shown on different faces.For example, the user of portable data assistance 9102 can be by portable data assistance 9102 be placed in coat pocket in the state of confirm its show (being information 9053 here).Specifically, the people that will be called Telephone number or name etc. be shown in the position that these information can be watched from the top of portable data assistance 9102.It uses Person can be confirmed that this is displayed without and take out portable data assistance 9102 in pocket, and thus, it is possible to judge whether to connect electricity Words.
Figure 33 D is the perspective view for showing Wristwatch-type portable data assistance 9200.Portable data assistance 9200 can be held Row mobile phone, Email, the reading of article and editor, music, network communication, computer game etc. are various to apply journey Sequence.In addition, the display surface of display unit 9001 is bent, can be shown on the curved display surface of institute.In addition, portable letter Breath terminal 9200 can be carried out by the wireless near field communication of communication standardization.For example, by with the ear that can carry out wireless communication Wheat is in communication with each other, and can carry out hand-free call.In addition, portable data assistance 9200 includes connection terminal 9006, can pass through Connector directly carries out exchanging for data with other information terminal.Alternatively, it is also possible to be charged by connection terminal 9006.This Outside, charging work also can use wireless power progress, without passing through connection terminal 9006.
Figure 33 E, Figure 33 F and Figure 33 G are the perspective views for showing the portable data assistance 9201 that can be folded.In addition, figure 33E is the perspective view of the portable data assistance 9201 of unfolded state, and Figure 33 F is one from unfolded state and folded state State becomes the perspective view of the portable data assistance 9201 of the state of the midway of another state, and Figure 33 G is folded state The perspective view of portable data assistance 9201.Portability is good in a folded configuration for portable data assistance 9201, in expansion shape Under state because with seamless spliced biggish display area and its display guide look it is strong.Portable data assistance 9201 is wrapped The display unit 9001 included is supported by three frameworks 9000 that hinge 9055 is connected.Make two frameworks 9000 by hinge 9055 Between bend, can reversibly become folded state from the unfolded state of portable data assistance 9201.For example, can be with 1mm or more and 150mm radius of curvature below are bent portable data assistance 9201.
Then, Figure 34 A and Figure 34 B shows different from electronic equipment shown in Figure 32 A to Figure 32 E, Figure 33 A to Figure 33 G The example of electronic equipment.Figure 34 A and Figure 34 B be include multiple display panels display device perspective view.Figure 34 A is multiple aobvious Show that perspective view when panel is wound, Figure 34 B are perspective views when multiple display panels are unfolded.
Display device 9500 shown in Figure 34 A and Figure 34 B includes multiple display panels 9501, axle portion 9511, bearing portion 9512.Multiple display panels 9501 all include display area 9502, the region 9503 with translucency.
Multiple display panels 9501 have flexibility.Two adjacent display surfaces are set in such a way that part of it overlaps each other Plate 9501.For example, the region 9503 respectively with translucency of two adjacent display panels 9501 can be overlapped.By using more The big display device of screen may be implemented in a display panel 9501.In addition, display panel can be wound according to service condition 9501, it is possible to realize the high display device of versatility.
The case where display area 9502 that Figure 34 A and Figure 34 B show adjacent display panel 9501 is separated from each other, but not It is confined to this, for example, it is also possible to by the display area 9502 for being overlapped adjacent display panel 9501 very close to each otherly, the company of realization Continuous display area 9502.
Electronic equipment shown in present embodiment has the feature including display unit used to display some information.Note that The semiconductor device of an embodiment of the invention also can be applied to do not include display unit electronic equipment.
At least part of present embodiment can be appropriate with other embodiments documented by this specification or embodiment It combines and implements in ground.
[embodiment 1]
In the present embodiment, the transistor of an embodiment of the invention is manufactured.In addition, the Id-Vg to transistor is special Property measure, and carry out GBT test.
[manufacture of transistor]
In the following, manufacture is equivalent to the transistor of above-mentioned transistor 100E, the electrical characteristics of the transistor are evaluated.In this implementation In example, following sample A1 and sample A2 is manufactured.
In addition, sample A1 and sample A2 has transistor, the channel length L of each transistor is respectively 3 μm and 6 μm, channel Width W is 50 μm.
[manufacturing method of sample A1 and sample A2]
Firstly, forming the tungsten film with a thickness of 100nm on a glass substrate using sputtering equipment.Then, this is led using photoetching process Electrolemma is processed, and the conductive film 104 for being used as first gate electrode is formed.
Then, four layers of insulating film is laminated on substrate and conductive film, forms the insulation for being used as first grid insulating film Film 106 (referring to Fig. 7 A).Insulating film 106 is continuous in a vacuum using plasma enhanced chemical vapor deposition (PECVD) equipment Ground is formed.As insulating film 106, the silicon nitride film with a thickness of 50nm, the silicon nitride film with a thickness of 300nm, thickness are sequentially formed Silicon nitride film for 50nm, the silicon oxynitride film with a thickness of 50nm.
Then, oxide semiconductor film 108_1_0 and oxide semiconductor film 108_2_ is sequentially formed on insulating film 106 0 (referring to Fig. 7 C).In the following, forming oxide semiconductor film 108 by the way that the oxide semiconductor film of the stacking is processed as island (referring to Fig. 8 A).The In-Ga-Zn film that oxide semiconductor film 108_1_0 uses with a thickness of 20nm, oxide semiconductor film 108_ The In-Ga-Zn film that 2_0 uses with a thickness of 25nm.
Oxide semiconductor film 108_1_0 is formed under the following conditions: underlayer temperature is 130 DEG C, is 180sccm by flow Argon gas and flow be 20sccm carrier of oxygen imported into the process chamber of sputtering equipment, pressure 0.6Pa, to comprising indium, The AC power of the metal oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) of gallium and zinc application 2.5kW.Note that having When the ratio of oxygen shared in deposition gases entirety is known as " oxygen flow ratio ".When formation oxide semiconductor film 108_1_0 Oxygen flow ratio is 10%.
Sputtering gas oxide semiconductor film 108_2_0 different in the sedimentary condition of oxide semiconductor film 108_1_0 It is formed under conditions of the flow of body.Specifically, stopping importing carrier of oxygen to process chamber, the carrier of oxygen for being 200sccm by flow It imported into the process chamber of sputtering equipment to be formed.In addition, oxygen flow ratio when forming oxide semiconductor film 108_2_0 is 100%.
Then, heated.Heating temperature is set as 350 DEG C, is carried out at heating in 1 hour under nitrogen atmosphere Reason, then carries out heat treatment in 1 hour under the mixed-gas atmosphere of nitrogen and oxygen.
Then, conductive film is formed on insulating film 106 and oxide semiconductor film 108, which is processed as wishing Conductive film 112a, 112b is consequently formed in the shape of prestige.Here, as conductive film, using sputtering equipment sequentially form with a thickness of The first titanium film of 30nm and copper film (referring to Fig. 8 C) with a thickness of 200nm.Then, copper film is etched by photoetching process, so The second titanium film with a thickness of 50nm is formed using sputtering equipment afterwards.Then, by photoetching process, to the first titanium film and the second titanium film into Row etching, is consequently formed conductive film 112a, 112b with shape shown in Fig. 8 C.
Then, it is washed using surface (back channel side) of the phosphoric acid to oxide semiconductor film 108.
Then, insulating film 114 is formed on insulating film 106, oxide semiconductor film 108 and conductive film 112a, 112b, Insulating film 116 is formed on insulating film 114 (referring to Fig. 9 A).Insulating film 114 and insulating film 116 use plasma enhanced chemical gas Mutually deposition (PECVD) equipment is continuously formed in a vacuum.The silicon oxynitride film with a thickness of 30nm is used as insulating film 114, The silicon oxynitride film with a thickness of 400nm is used as insulating film 116.
Then, heated.Heating temperature is set as 350 DEG C, is carried out at heating in 1 hour under nitrogen atmosphere Reason.
Then, conductive film (not shown) is formed on insulating film 116.As conductive film, thickness is formed using sputtering equipment For the ITSO film of 6nm.
Then, make oxygen via conductive film by plasma processing method, oxygen is added to insulating film 116.At plasma In logos, plasma discharge is carried out under the atmosphere comprising carrier of oxygen.
Then, conductive film is etched.
Then, insulating film is formed on insulating film 116.Insulating film uses plasma enhanced chemical vapor deposition (PECVD) equipment forms the silicon nitride film with a thickness of 100nm.
Then, opening portion is formed in the desired region of insulating film.As the forming method of opening portion, dry corrosion is utilized Lithography.
Then, conductive film is formed in a manner of filling opening portion, which is processed as island, is consequently formed and is used as The conductive film of second gate electrode.As the conductive film, the ITSO film with a thickness of 100nm is formed using sputtering equipment.
Then, insulating film is formed on insulating film and conductive film.As insulating film, the acrylic acid with a thickness of 1.5 μm is used Class photoresist.
As described above, perparation of specimen A1 and sample A2.
[the Id-Vg characteristic of transistor]
Then, the Id-Vg characteristic of the transistor of sample A1 and sample A2 manufactured above is measured.Id-Vg as transistor is special The measuring condition of property, be applied to the voltage (hereinafter also referred to as gate voltage (Vg)) for being used as the conductive film of first gate electrode and The voltage (hereinafter also referred to as back gate voltage (Vbg)) for being used as the conductive film of the second gate electrode is applied to from -10V every 0.25V Change to+10V.In addition, the voltage (hereinafter also referred to as source voltage (Vs)) applied to the conductive film for being used as source electrode is set For 0V (comm), the voltage (hereinafter also referred to as drain voltage (Vd)) applied to the conductive film for being used as drain electrode is set as 0.1V and 20V.
The Id-Vg characterization result of sample A1 and sample A2 is shown respectively in Figure 35 A and Figure 35 B.In Figure 35 A and Figure 35 B, the One longitudinal axis indicates Id (A), and second longitudinal axis indicates field-effect mobility (μ FE (cm2/ Vs)), horizontal axis indicates Vg (V).Note that field is imitated Mobility is answered to refer to the value measured when Vd is 20V.
From Figure 35 A and Figure 35 B it is found that field-effect mobility height and the crystal with excellent switching characteristic can be manufactured Pipe.
[grid bias-thermal stress test (GBT test)]
Then, reliability evaluation is carried out to above-mentioned sample A2.As reliability evaluation, tested using GBT.
The GBT test condition of the present embodiment is as follows: being applied to the conductive film for being used as first gate electrode and is used as The voltage (hereinafter referred to as grid voltage (Vg)) of the conductive film of second gate electrode is set as ± 30V；It is applied to and is used as source electricity The voltage (hereinafter, being known respectively as drain voltage (Vd), source voltage (Vs)) of the conductive film of pole and drain electrode is set as 0V (COMMON)；Stress temperature is 60 DEG C；And stress time is 1 hour, and in dark surrounds and light irradiation environment (using white The light of color LED illumination 10000lx or so) two kinds of environment.That is by the potential setting of the source electrode and drain electrode of transistor For identical current potential, and (here, 1 hour) is to first gate electrode within the set time and the second gate electrode applies and source electrode And the current potential that drain electrode is different.
In addition, the feelings higher than the current potential of source electrode and drain electrode in the current potential for being applied to first gate electrode and the second gate electrode Apply direct stress under condition, and it is lower than the current potential of source electrode and drain electrode in the current potential for being applied to first gate electrode and the second gate electrode In the case where apply negative stress.Therefore, with measurement environment combine and in positive GBT (dark), negative GBT (dark), positive GBT (illumination Penetrate) and four kinds of negative GBT (light irradiation) under the conditions of carry out reliability evaluation.In addition, positive GBT (dark) is expressed as below PBTS (Positive Bias Temperature Stress), is expressed as NBTS (Negative Bias for negative GBT (dark) Temperature Stress), positive GBT (light irradiation) is expressed as PBITS (Positive Bias Illumination Temperature Stress), negative GBT (light irradiation) is expressed as NBITS (Negative Bias Illumination Temperature Stress)。
Figure 36 shows the GBT test result of sample A2.In addition, left side indicates the threshold voltage of transistor in Figure 36 Variable quantity (Δ Vth), right side indicate the variable quantity (Δ Shift) of drift value.
Note that drift value refers in leakage current (Id)-gate voltage (Vg) characteristic of transistor, electric leakage expressed in logarithmic Flow the tangent line and 1 × 10 of the maximum inclination of (Id)-12Gate voltage (Vg) on the intersection point of the axis of A.Δ Shift refers to drift value Variable quantity.
From result shown in Figure 36 it is found that the variation of threshold voltage in GBT test of transistor included by sample A2 The variable quantity (Δ Shift) for measuring (Δ Vth) and drift value is within ± 2V.It can thus be appreciated that transistor included by sample A2 has High reliability.
[embodiment 2]
In the present embodiment, transistor is manufactured using an embodiment of the invention.In addition, to the Id-Vg of transistor Characteristic measures, and carries out GBT test.
[manufacture of transistor]
In the following, manufacture is equivalent to the transistor of above-mentioned transistor 100E, the electrical characteristics of the transistor are evaluated.In this implementation In example, following sample B1 and sample B2 is manufactured.In addition, the difference between sample B1 and sample B2 and sample A1 and sample A2 Be: in sample B1 and sample B2, the atomic ratio of the In for Zn in oxide semiconductor film 108_1 is greater than oxide half The atomic ratio of the In for Zn in electrically conductive film 108_2.
In addition, sample B1 and sample B2 has transistor, the channel length L of each transistor is respectively 3 μm and 6 μm, channel Width W is 50 μm.
[manufacturing method of sample B1 and B2]
Oxygen included by the manufacturing method and sample A1 and sample A2 of oxide semiconductor film included by sample B1 and sample B2 The manufacturing method of compound semiconductor film is different.Specifically, being used to be formed the atom of the target of oxide semiconductor film 108_1_0 It is more different than from the atomic ratio of target for being used to form oxide semiconductor film 108_2_0.
Oxide semiconductor film 108_1_0 is formed under the following conditions: underlayer temperature is 130 DEG C, is 180sccm by flow Argon gas and flow be 20sccm carrier of oxygen imported into the process chamber of sputtering equipment, pressure 0.6Pa, to comprising indium, The AC power of the metal oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) of gallium and zinc application 2.5kW.Note that having When the ratio of oxygen shared in deposition gases entirety is known as " oxygen flow ratio ".When formation oxide semiconductor film 108_1_0 Oxygen flow ratio is 10%.In addition, in the In-Ga-Zn oxide formed using the target that atomic ratio is In:Ga:Zn=4:2:4.1 In film, energy gap is about 3.0eV, and electron affinity is about 4.4eV.
Oxide semiconductor film 108_2_0 is formed under the following conditions: underlayer temperature is 170 DEG C, is 100sccm by flow Argon gas and flow be 100sccm carrier of oxygen imported into the process chamber of sputtering equipment, pressure 0.6Pa, to comprising indium, The AC power of the metal oxide target (In:Ga:Zn=1:1:1 [atomic ratio]) of gallium and zinc application 0.5kW.Note that sometimes The ratio of oxygen shared in deposition gases entirety is known as " oxygen flow ratio ".Form oxygen when oxide semiconductor film 108_2_0 Flow-rate ratio is 50%.In addition, in the In-Ga-Zn oxidation film formed using the target that atomic ratio is In:Ga:Zn=1:1:1 In, energy gap is about 3.2eV, and electron affinity is about 4.7eV.
[the Id-Vg characteristic of transistor]
Then, the Id-Vg characteristic of the transistor of the sample B1 of above-mentioned manufacture and sample B2 is measured.In addition, as crystal The measuring condition of the Id-Vg characteristic of pipe, using measuring condition same as sample A1 and sample A2.
The Id-Vg characterization result of sample B1 and sample B2 is shown respectively in Figure 37 A and Figure 37 B.In Figure 37 A and Figure 37 B, the One longitudinal axis indicates Id (A), and second longitudinal axis indicates field-effect mobility (μ FE (cm2/ Vs)), horizontal axis indicates Vg (V).Note that field is imitated Mobility is answered to refer to the value measured when Vd is 20V.
From Figure 37 A and Figure 37 B it is found that field-effect mobility height and the crystal with excellent switching characteristic can be manufactured Pipe.
[grid bias-thermal stress test (GBT test)]
Then, reliability evaluation is carried out to above-mentioned sample B2.As reliability evaluation, tested using GBT.In addition, being surveyed as GBT Strip part, using measuring condition same as sample A1 and sample A2.
Figure 38 shows the GBT test result of sample B2.In addition, left side indicates the threshold voltage of transistor in Figure 38 Variable quantity (Δ Vth), right side indicate the variable quantity (Δ Shift) of drift value.
Note that drift value refers in leakage current (Id)-gate voltage (Vg) characteristic of transistor, electric leakage expressed in logarithmic Flow the tangent line and 1 × 10 of the maximum inclination of (Id)-12Gate voltage (Vg) on the intersection point of the axis of A.Δ Shift refers to drift value Variable quantity.
From result shown in Figure 38 it is found that the variation of threshold voltage in GBT test of transistor included by sample B2 The variable quantity (Δ Shift) for measuring (Δ Vth) and drift value is within ± 3V.It can thus be appreciated that transistor included by sample B2 has High reliability.
At least part of the present embodiment can be appropriately combined and reality with other embodiments documented by this specification It applies.
Symbol description
100: transistor, 100A: transistor, 100B: transistor, 100C: transistor, 100D: transistor, 100E: crystal Pipe, 102: substrate, 104: conductive film, 106: insulating film, 108: oxide semiconductor film, 108_1: oxide semiconductor film, 108_1_0: oxide semiconductor film, 108_2: oxide semiconductor film, 108_2_0: oxide semiconductor film, 109_2: oxidation Object semiconductor film, 112: conductive film, 112a: conductive film, 112a_1: conductive film, 112a_2: conductive film, 112a_3: conductive film, 112b: conductive film, 112b_1: conductive film, 112b_2: conductive film, 112b_3: conductive film, 114: insulating film, 116: insulating film, 118: insulating film, 120: conductive film, 120a: conductive film, 120b: conductive film, 122a: conductive film, 122b: 122c: conductive film is led Electrolemma, 124: insulating film, 126: insulating film, 128: oxide semiconductor film, 130: conductive film, 134: insulating film, 136: insulation Film, 138: conductive film, 140: insulating film, 141a: opening portion, 141b: opening portion, 142a: opening portion, 142b: opening portion, 144: Conductive film, 150:EL layers, 160: light-emitting component, 181: opening portion, 182: opening portion, 184: opening portion, 190: semiconductor device, 191: target, 192: plasma, 193: target, 194: plasma, 501: pixel circuit, 502: pixel portion, 504: driving Circuit portion, 504a: gate drivers, 504b: source electrode driver, 506: protection circuit, 507: portion of terminal, 550: transistor, 552: transistor, 554: transistor, 560: capacitor, 562: capacitor, 570: liquid crystal cell, 572: light-emitting component, 600: aobvious Show panel, 601: transistor, 604: interconnecting piece, 605: transistor, 606: transistor, 607: interconnecting piece, 612: liquid crystal layer, 613: Conductive film, 617: insulating film, 620: insulating film, 621: insulating film, 623: conductive film, 631: coloring layer, 632: photomask, 633a: alignment films, 633b: alignment films, 634: coloring layer, 640: liquid crystal cell, 641: adhesive layer, 642: adhesive layer, 643: leading Electrolemma, 644:EL layers, 645a: conductive film, 645b: conductive film, 646: insulating film, 647: insulating film, 648: conductive film, 649: even Connect layer, 651: substrate, 652: conductive film, 653: semiconductor film, 654: conductive film, 655: opening, 656: polarizing film, 659: electricity Road, 660: light-emitting component, 661: substrate, 662: display unit, 663: conductive film, 664: electrode, 665: electrode, 666: wiring, 667: electrode, 672:FPC, 673:IC, 681: insulating film, 682: insulating film, 683: insulating film, 684: insulating film, 685: insulation Film, 686: connector, 687: interconnecting piece, 700: display device, 701: substrate, 702: pixel portion, 704: drive circuit, 705: Substrate, 706: gate driving circuit portion, 708:FPC portion of terminal, 710: signal wire, 711: wiring portion, 712: sealant, 716: FPC, 730: insulating film, 732: sealing film, 734: insulating film, 736: coloring film, 738: photomask, 750: transistor, 752: brilliant Body pipe, 760: connection electrode, 770: planarization insulating film, 772: conductive film, 773: insulating film, 774: conductive film, 775: liquid crystal Element, 776: liquid crystal layer, 777: conductive film, 778: structural body, 780: anisotropic conductive film, 782: light-emitting component, 786:EL Layer, 788: conductive film, 790: capacitor, 791: touch screen, 792: insulating film, 793: electrode, 794: electrode, 795: insulating film, 796: electrode, 797: insulating film, 2190: plasma, 2192: cation, 2501: settling chamber, 2502a: target, 2502b: target Material, 2504: segregation zones, 2504a: sputtering particle, 2506: segregation zones, 2506a: sputtering particle, 2510a: backing plate, 2510b: backing plate, 2520: target frame, 2520a: target frame, 2520b: target frame, 2530a: magnet unit, 2530b: magnet list Member, 2530N1: magnet, 2530N2: magnet, 2530S: magnet, 2532: magnet frame, 2542: component, 2560: substrate, 2570: lining Chassis, 2580a: the magnetic line of force, 2580b: the magnetic line of force, 6651: substrate, 7000: display module, 7001: upper cover, 7002: lower cover, 7003:FPC, 7004: touch screen, 7005:FPC, 7006: display panel, 7007: backlight, 7008: light source, 7009: frame, 7010: printed circuit board, 7011: battery, 8000: camera, 8001: framework, 8002: display unit, 8003: operation button, 8004: shutter release button, 8006: camera lens, 8100: view finder, 8101: framework, 8102: display unit, 8103: button, 8200: wearing Display, 8201: mounting portion, 8202: lens, 8203: main body, 8204: display unit, 8205: cable, 8206: battery, 8300: Head-mounted display, 8301: framework, 8302: display unit, 8304: setting tool, 8305: camera lens, 9000: framework, 9001: display Portion, 9003: loudspeaker, 9005: operation key, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: operation is pressed Button, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9100: television equipment, 9101: portable Formula information terminal, 9102: portable data assistance, 9200: portable data assistance, 9201: portable data assistance, 9500: Display device, 9501: display panel, 9502: display area, 9503: region, 9511: axle portion, 9512: bearing portion
The application based on the Japanese patent application No.2016-080066 for being submitted to Japanese Patent Office on April 13rd, 2016 and No.2016-080137 is incorporated its complete content into this by reference.

Claims (24)

1. a kind of semiconductor device, comprising:
Gate electrode；
Insulating film on the gate electrode；
Oxide semiconductor film on the insulating film；And
A pair of electrodes on the oxide semiconductor film,
Wherein, the oxide semiconductor film includes on the first oxide semiconductor film and first oxide semiconductor film Second oxide semiconductor film,
First oxide semiconductor film and second oxide semiconductor film separately include In, M and Zn,
The M be Al, Ga, Y or Sn,
First oxide semiconductor film includes the region that its crystallinity is lower than second oxide semiconductor film,
In the case where the atomic ratio of the In is 4, for the atomic ratio of the M of the summation of the In, the M and the Zn For 1.5 or more and 2.5 hereinafter,
Also, in the case where the atomic ratio of the In is 4, for the summation of the In, the M and the Zn The atomic ratio of the Zn is 2 or more and 4 or less.
2. semiconductor device according to claim 1,
Wherein the atomic ratio of the In, the M and the Zn be In:M:Zn=4:2:3 or its near.
3. semiconductor device according to claim 1,
Wherein second oxide semiconductor film includes crystallization unit,
And the crystallization unit has c-axis orientation.
4. a kind of display device, comprising:
Semiconductor device described in claim 1；And
Display element.
5. a kind of electronic equipment, comprising:
Display device as claimed in claim 4；And
Operation key or battery.
6. a kind of semiconductor device, comprising:
Gate electrode；
Insulating film on the gate electrode；
Oxide semiconductor film on the insulating film；And
A pair of electrodes on the oxide semiconductor film,
Wherein, the oxide semiconductor film includes on the first oxide semiconductor film and first oxide semiconductor film Second oxide semiconductor film,
First oxide semiconductor film and second oxide semiconductor film separately include In, M and Zn,
The M be Al, Ga, Y or Sn,
First oxide semiconductor film includes the region that its crystallinity is lower than second oxide semiconductor film,
In the case where the atomic ratio of the In is 5, for the atomic ratio of the M of the summation of the In, the M and the Zn For 0.5 or more and 1.5 hereinafter,
Also, in the case where the atomic ratio of the In is 5, for the summation of the In, the M and the Zn The atomic ratio of the Zn is 5 or more and 7 or less.
7. semiconductor device according to claim 6,
Wherein the atomic ratio of the In, the M and the Zn be In:M:Zn=5:1:6 or its near.
8. semiconductor device according to claim 6,
Wherein second oxide semiconductor film includes crystallization unit,
And the crystallization unit has c-axis orientation.
9. a kind of display device, comprising:
Semiconductor device as claimed in claim 6；And
Display element.
10. a kind of electronic equipment, comprising:
Display device as claimed in claim 9；And
Operation key or battery.
11. a kind of semiconductor device, comprising:
Gate electrode；
Insulating film on the gate electrode；
Oxide semiconductor film on the insulating film；And
A pair of electrodes on the oxide semiconductor film,
Wherein, the oxide semiconductor film includes on the first oxide semiconductor film and first oxide semiconductor film Second oxide semiconductor film,
First oxide semiconductor film and second oxide semiconductor film include identical element,
The electron affinity of first oxide semiconductor film is greater than the electron affinity of second oxide semiconductor film,
The electronics of the electron affinity of first oxide semiconductor film and second oxide semiconductor film The difference of affinity be 0.15eV or more and 2.0eV hereinafter,
Also, first oxide semiconductor film includes the region that its crystallinity is lower than second oxide semiconductor film.
12. semiconductor device according to claim 11,
Wherein first oxide semiconductor film and second oxide semiconductor film separately include In, M and Zn,
And the M is Al, Ga, Y or Sn.
13. semiconductor device according to claim 11,
Wherein second oxide semiconductor film includes crystallization unit,
And the crystallization unit has c-axis orientation.
14. a kind of display device, comprising:
Semiconductor device described in claim 11；And
Display element.
15. a kind of electronic equipment, comprising:
Display device described in claim 14；And
Operation key or battery.
16. a kind of semiconductor device, comprising:
Gate electrode；
Insulating film on the gate electrode；
Oxide semiconductor film on the insulating film；And
A pair of electrodes on the oxide semiconductor film,
Wherein, the oxide semiconductor film includes on the first oxide semiconductor film and first oxide semiconductor film Second oxide semiconductor film,
First oxide semiconductor film and second oxide semiconductor film separately include In, M and Zn,
The M be Al, Ga, Y or Sn,
The atomic ratio of the In for the Zn in first oxide semiconductor film is greater than second oxide half The atomic ratio of the In for the Zn in electrically conductive film,
Also, first oxide semiconductor film includes the region that its crystallinity is lower than second oxide semiconductor film.
17. semiconductor device according to claim 16,
Wherein in the case where the atomic ratio of the In is 4, in first oxide semiconductor film for the In, described The atomic ratio of the M of the summation of M and the Zn be 1.5 or more and 2.5 hereinafter,
In the case where the atomic ratio of the In is 4, in first oxide semiconductor film for the In, described The atomic ratio of the Zn of the summation of the M and Zn be 2 or more and 4 hereinafter,
In the case where the atomic ratio of the In is 1, in second oxide semiconductor film for the In, the M and The atomic ratio of the M of the summation of the Zn be 0.5 or more and 1.5 hereinafter,
And in the case where the atomic ratio of the In is 1, in second oxide semiconductor film for the In, The atomic ratio of the Zn of the summation of the M and Zn is 0.1 or more and 2 or less.
18. semiconductor device according to claim 17,
Wherein the atomic ratio of the In, the M in first oxide semiconductor film and the Zn are In:M:Zn= 4:2:3 or its near,
And the atomic ratio of the In, the M and the Zn in second oxide semiconductor film are In:M:Zn= 1:1:1 or its near.
19. semiconductor device according to claim 16,
Wherein in the case where the atomic ratio of the In is 4, in first oxide semiconductor film for the In, described The atomic ratio of the M of the summation of M and the Zn be 1.5 or more and 2.5 hereinafter,
In the case where the atomic ratio of the In is 4, in first oxide semiconductor film for the In, described The atomic ratio of the Zn of the summation of the M and Zn be 2 or more and 4 hereinafter,
In the case where the atomic ratio of the In is 5, in second oxide semiconductor film for the In, the M and The atomic ratio of the M of the summation of the Zn be 0.5 or more and 1.5 hereinafter,
And in the case where the atomic ratio of the In is 5, in second oxide semiconductor film for the In, The atomic ratio of the Zn of the summation of the M and Zn is 5 or more and 7 or less.
20. semiconductor device according to claim 19,
Wherein the atomic ratio of the In, the M in first oxide semiconductor film and the Zn are In:M:Zn= 4:2:3 or its near,
And the atomic ratio of the In, the M and the Zn in second oxide semiconductor film are In:M:Zn= 5:1:6 or its near.
21. semiconductor device according to claim 16,
Wherein first oxide semiconductor film includes the composite oxide semiconductor of first area and second area,
The first area includes multiple first clusters,
The multiple first cluster includes that one or two of the In and the Zn are used as main component,
The second area includes multiple second clusters,
The multiple second cluster includes one or more in the In, the M and the Zn as main component,
The M be Al, Ga, Y or Sn,
The multiple first cluster is connected to each other,
And the multiple second cluster is connected to each other.
22. semiconductor device according to claim 16,
Wherein second oxide semiconductor film includes crystallization unit,
And the crystallization unit has c-axis orientation.
23. a kind of display device, comprising:
Semiconductor device described in claim 16；And
Display element.
24. a kind of electronic equipment, comprising:
Display device described in claim 23；And
Operation key or battery.
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