CN109068454A - Modified PWM and DIM dimming driving circuit - Google Patents
Modified PWM and DIM dimming driving circuit Download PDFInfo
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- CN109068454A CN109068454A CN201811278279.4A CN201811278279A CN109068454A CN 109068454 A CN109068454 A CN 109068454A CN 201811278279 A CN201811278279 A CN 201811278279A CN 109068454 A CN109068454 A CN 109068454A
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- 230000005347 demagnetization Effects 0.000 claims abstract description 13
- 238000005286 illumination Methods 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 230000001939 inductive effect Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 76
- 239000003990 capacitor Substances 0.000 claims description 19
- 241000667487 Papiine alphaherpesvirus 2 Species 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C3/00—Stoves or ranges for gaseous fuels
- F24C3/12—Arrangement or mounting of control or safety devices
- F24C3/126—Arrangement or mounting of control or safety devices on ranges
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
Abstract
The present invention provides a kind of modified PWM and DIM dimming driving circuits, including LED illumination circuit and light adjusting circuit；High pressure turns low-voltage module by high pressure JFET1 connection busbar voltage, exports the operating voltage used for external equipment or controller；The input terminal of light-adjusting module receives direct current signal and pwm signal by dim signal input port, the output end of light-adjusting module connects system control module, system control module controls the grid of high-voltage MOS pipe by drive module, the drain electrode of the high-voltage MOS pipe connects lighting circuit all the way, when high-voltage MOS pipe is closed, the inductance in circuit of demagnetizing carries out demagnetization electric discharge；Peak detection block is used to detect the source voltage of high-voltage MOS pipe, and system control module controls the closing of high-voltage MOS pipe by drive module according to the source voltage detected so as to adjust the peak value of inductive discharge in LED light adjusting circuit.Modified PWM and DIM dimming driving circuit have the advantages that light leakage, structure are simple, at low cost.
Description
Technical field
The present invention relates to LED to dim field, specifically, relates to a kind of modified PWM and DIM dimming driving circuit.
Background technique
At present in non-isolated PWM, DIM light adjusting system, using high-voltage MOSFET with the internal public DRAIN's of JFET
Structure, with reference to CN201710058800.But power again to JFET since the power supply of system passes through LED lamp tube, so this structure
LED light glimmer is still resulted in the case where needing LED lamp tube not work.Simultaneously because using 500V high-pressure process, single
Piece is integrated with high-voltage MOSFET, and uses the structure of two-way, and power is relatively limited.
In order to solve the above problems, people are seeking always a kind of ideal technical solution.
Summary of the invention
The purpose of the present invention is in view of the deficiencies of the prior art, so that it is simple, at low cost to provide a kind of light leakage, structure
Modified PWM and DIM dimming driving circuit.
To achieve the goals above, the technical scheme adopted by the invention is that: a kind of modified PWM and DIM light modulation driving
Circuit, including LED illumination circuit and light adjusting circuit；The LED illumination circuit includes LED lamp tube and Schottky tube, the LED light
Pipe is also connected with the LC oscillating circuit being made of resistance, capacitor and inductance, the Schottky tube, the LED lamp tube and the inductance
Also constitute demagnetization circuit；The light adjusting circuit includes that high pressure JFET1, high pressure turn low-voltage module, peak detection block, system control
Module, drive module, light-adjusting module, dim signal input port, drive module and high-voltage MOS pipe；The high pressure turns low pressure molding
Block exports the operating voltage used for external equipment or controller by the high pressure JFET1 connection busbar voltage；The light modulation
The input terminal of module receives direct current signal and pwm signal, the output of the light-adjusting module by the dim signal input port
End connects the system control module, and the system control module controls the grid of the high-voltage MOS pipe by the drive module
The drain electrode of pole, the high-voltage MOS pipe connects lighting circuit all the way, and when high-voltage MOS pipe is closed, the inductance in circuit of demagnetizing demagnetizes
Electric discharge；The peak detection block is used to detect the source voltage of high-voltage MOS pipe, and the system control module is according to detecting
Source voltage controls the closing of high-voltage MOS pipe by the drive module so as to adjust the peak of inductive discharge in LED light adjusting circuit
Value.
Based on above-mentioned, the light adjusting circuit further includes high pressure JFET2, under-voltage protective module, VGG generation circuit and low voltage difference
The input terminal of LDO module, the VGG generation circuit passes through the high pressure JFET2 connection busbar voltage, the VGG generation circuit
Output end be separately connected storage capacitor and the low voltage difference LDO module, the low voltage difference LDO module exports 5V voltage；It is described
High pressure turns low-voltage module and also turns low-voltage module output to the VGG generation circuit and the high pressure by the under-voltage protective module
Enable signal EN.
Based on above-mentioned, it includes amplifier U1, metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2 that the high pressure, which turns low-voltage module, and the amplifier U1's is defeated
Outlet is separately connected the grid of the metal-oxide-semiconductor M1 and the grid of the metal-oxide-semiconductor M2, and the grid of the metal-oxide-semiconductor M1 also passes sequentially through
Switch S1 connects the drain electrode of metal-oxide-semiconductor M1 with resistance R3, and the drain electrode of the metal-oxide-semiconductor M1 and the drain electrode of the metal-oxide-semiconductor M2 are separately connected
The source electrode of the high pressure JFET1, the source electrode of the metal-oxide-semiconductor M1 pass sequentially through resistance R2 and resistance R1 ground connection, the metal-oxide-semiconductor M1's
Source electrode also passes sequentially through switch S2 and resistance R4 ground connection, and the source electrode of the source output voltage VDD of metal-oxide-semiconductor M1, metal-oxide-semiconductor M2 are driving
Module provides voltage；The non-inverting input terminal of amplifier U1 connects reference voltage VREF, and the inverting input terminal of amplifier U1 connects resistance R2
At the tie point of resistance R1, switch S1 and switch S2 are according to enable signal EN open or close.
Based on above-mentioned, the light-adjusting module include amplifier U2, logic control conversion circuit, constant-current source I1, current source I2,
Metal-oxide-semiconductor P1, metal-oxide-semiconductor N1, Schmidt trigger SMT, capacitor C1, logic sum gate and logical AND gate, the amplifier U2 is according to high pressure
The gate leakage capacitance electric feed signal of metal-oxide-semiconductor is by logic control conversion circuit output demagnetization end signal K, with light modulation input DIM letter
The size of number co- controlling current source I2, with control to capacitor C1 charging current, generation time controls signal and controls high pressure
The shut-in time of metal-oxide-semiconductor grid.
Based on above-mentioned, the VGG generation circuit include comparator U3, metal-oxide-semiconductor HVP1, metal-oxide-semiconductor HVP2, metal-oxide-semiconductor HVN1,
Metal-oxide-semiconductor HVN2, metal-oxide-semiconductor HVN3, switch S5, switch S6, resistance R5, resistance R6 and resistance R7, comparator U3 control metal-oxide-semiconductor HVN1
Grid and metal-oxide-semiconductor HVN2 grid, the drain electrode of metal-oxide-semiconductor HVN1 is separately connected the source electrode of metal-oxide-semiconductor HVP1 and the grid of metal-oxide-semiconductor HVP2
Pole, the drain electrode of metal-oxide-semiconductor HVN2 are separately connected the drain electrode of the grid and metal-oxide-semiconductor HVP2 of metal-oxide-semiconductor HVP1, the source electrode of metal-oxide-semiconductor HVP1,
The drain electrode of the source electrode and metal-oxide-semiconductor HVN3 of metal-oxide-semiconductor HVP2 is separately connected the source electrode of high pressure JFET2, the grid connection of metal-oxide-semiconductor HVN3
The drain electrode of metal-oxide-semiconductor HVP2, the source electrode of metal-oxide-semiconductor HVN3 pass sequentially through resistance R5, resistance R6 and resistance R7 ground connection, metal-oxide-semiconductor HVN3's
Source electrode returns storage capacitor charging, the homophase input single connection reference voltage VREF1 of comparator U3, the anti-phase input of comparator U3
End is connected at the tie point of resistance R6 and resistance R7 by switch S5, and the inverting input terminal of comparator U3 also passes through switch S6 company
It connects at the tie point of resistance R5 and resistance R6.
The present invention has substantive distinguishing features outstanding and significant progress compared with the prior art, and specifically, the present invention adopts
Directly pass through bussed supply with high pressure JFET1, LED can not be completely closed the shortcomings that light leakage before having corrected, while port is multiple
With only with an input port realizing DIM and PWM dimming function, simplify system and design, reduce system cost, have
Simple, the at low cost advantage of light leakage, structure.
Detailed description of the invention
Fig. 1 is structural schematic block diagram of the invention.
Fig. 2 is the electrical block diagram that high pressure of the present invention turns low-voltage module.
Fig. 3 is the electrical block diagram of light-adjusting module of the present invention.
Fig. 4 is the structural schematic diagram of present invention demagnetization waveform.
Fig. 5 is the electrical block diagram of VGG generation circuit of the present invention.
Fig. 6 is the electrical block diagram of peak detection block of the present invention.
Specific embodiment
Below by specific embodiment, technical scheme of the present invention will be described in further detail.
As shown in figures 1 to 6, a kind of modified PWM and DIM dimming driving circuit, including LED illumination circuit and light modulation electricity
Road；The LED illumination circuit includes LED lamp tube and Schottky tube, and the LED lamp tube is also connected with by resistance, capacitor and inductance group
At LC oscillating circuit, the Schottky tube, the LED lamp tube and the inductance also constitute demagnetization circuit.Inductance passes through Xiao Te
Base tube and LED light tube discharge, this discharge time are the demagnetization time.The light adjusting circuit includes that high pressure JFET1, high pressure turn low pressure molding
Block, peak detection block, system control module, drive module, light-adjusting module, dim signal input port, drive module and height
Press metal-oxide-semiconductor；The high pressure turns low-voltage module by the high pressure JFET1 connection busbar voltage, exports for external equipment or control
The operating voltage that device uses；The input terminal of the light-adjusting module by the dim signal input port receive direct current signal and
The output end of pwm signal, the light-adjusting module connects the system control module, and the system control module passes through the driving
Module controls the grid of the high-voltage MOS pipe, and the drain electrode of the high-voltage MOS pipe connects lighting circuit all the way, closes in high-voltage MOS pipe
When, the inductance in circuit of demagnetizing carries out demagnetization electric discharge；The peak detection block is used to detect the source voltage of high-voltage MOS pipe, institute
State system control module according to the source voltage detected by the drive module control high-voltage MOS pipe closing so as to adjust
The peak value of inductive discharge in LED light adjusting circuit.Light adjusting circuit is encapsulated as chip in practice, and high pressure JFET1 drain electrode passes through the port HV
Busbar voltage is connected, high-voltage MOS pipe drain electrode connects LED illumination circuit by the port DN, and high-voltage MOS pipe source electrode passes through the port ISEN
Connecting resistance Rcs is simultaneously grounded, and VGG generation circuit connects storage capacitor by the port VGG, and low voltage difference LDO module is exported by the port P5V
5V power supply, light-adjusting module connect MCU controller by the port DIM, and unit receives light modulation remote control letter to MCU controller by wireless communication
Number.DIM port compatible PWM light modulation and DC voltage simulation light modulation.The range of DIM port analog light modulation is 1V-3V, when the end DIM
Lower than 1V, then LED current is 0 to mouth voltage, and when the voltage of the port DIM is higher than 3V, then the electric current brightness of LED is 100%.The port DIM
It can also be dimmed using PWM, input the square wave of a duty ratio 0-100%, then adjustable LED current is inputted from 0-100%
The amplitude of square wave is 0V-5V.
As shown in Fig. 2, VS1 is connected to the source electrode of 500V high pressure JFET1, it is converted into middle pressure, probably 20 to 30V or so, so
Turn low-voltage circuit reconvert by this high pressure afterwards to be controlled at low pressure 7.5V, switch S1 and switch S2 by enable signal EN, system
After powering on, switch S1 and switch S2 are closed, then NMOS tube M1 and NMOS tube M2 is connected into the form of grid leak short circuit, metal-oxide-semiconductor M1 and MOS
Pipe M2 conducting, VDD and VPOWER voltage begins to ramp up, and switch S2 is closed so that vdd terminal is grounded by resistance R4, control resistance R4
The starting speed of controllable VDD, to keep system more stable.When the voltage value of the voltage arrival enable signal EN of VDD, probably
6.5V or so, then enable signal EN controls S1 and S2 and opens, and disconnects the connection of R3 and R4, system constitutes a negative-feedback at this time
System, VDD and VPOWER voltage are determined by VREF and R1 and R2.Set VDD as
7.5V, then VPOWER is also 7.5V.
As shown in Figure 3 and Figure 4, when system is demagnetized, DN is high voltage, is arrived by the gate leakage capacitance feed of high-voltage MOS pipe
GATE signal, GATE signal is the low voltage signal greater than 0V at this time, about in 0.3V or so.After the completion of inductive discharge, this
When the port DN start resonance, due to the effect of high-voltage MOS pipe gate leakage capacitance, at this time GATE also can resonance, when resonance potential is less than
0V then triggers demagnetization end signal K, and when DIM signal works, then signal K controls the size of current source I2, and current source I2's is big
Small and input DIM is proportional, and I1 is a fixed current source, then IOFF=I1-I2, and when system is demagnetized, then DRV is low electricity
Pressure, IOFF charges to capacitor C1 at this time, and when the voltage of C1 rises to the trigger voltage of Schmidt trigger SMT, then DIM_OFF is defeated
High potential out.When the input of DIM low pressure is low, then I2 electric current becomes larger, and IOFF slowly becomes smaller at this time, and the charging time of C1 is elongated, then moves back
The magnetic time is elongated, then LED light tube current becomes smaller.When DIM foot is hanging, then CON is that low potential shields light-adjusting module.
As shown in figure 5, VS2 is connected to the source electrode of high pressure JFET2, VS2 is high pressure.VREF1 is an internal benchmark electricity
Pressure, enable signal EN is triggered after system start completion, then VGG generation circuit is started to work, and switch S5 closure, S6 is opened, than
Inverting input terminal compared with device U3 is connected to the A point of resistance, and metal-oxide-semiconductor HVN3 starts to charge the storage capacitor of the port VGG at this time, works as electricity
Pressure is charged toThen comparator U3 output voltage jumps, and switch S5 is opened at this time, opens
It closes S6 to close, the inverting input terminal of comparator U3 is connected to the B point of resistance, while metal-oxide-semiconductor HVN3 is closed, and stops to storage capacitor
Charging.VGG generation circuit then passes through low voltage difference LDO module output 5V voltage, is supplied to MCU or other equipment power supply.Work as storage
Energy capacitance voltage ceaselessly consumes, then VGG port voltage slowly declines, when voltage drops toThen comparator U3 output voltage starts to invert again, and switch S5 is closed at this time, switch
S6 is opened, and the inverting input terminal of comparator U3 is connected to the A point of resistance, and metal-oxide-semiconductor HVN3 starts to open the storage capacitor of the port VGG again
Begin to charge, repeatedly.VGG_A and VGG_B is 16V and 8V respectively in such a system.Electric current 5V exported due to periphery compared with
Greatly, it is greater than 10mA, so by the storage capacitor of VGG, to keep the power consumption of system lower, to reduce the heating problem of chip.
Whole system works in this way: after system electrification, busbar voltage is reached in chip by internal high pressure JFET1
Portion, when builtin voltage reaches voltage on enable signal EN, then system starts, open high-voltage MOS pipe, and ISEN port voltage is opened
Beginning slowly rises, and when reaching internal limit value, then closes high-voltage MOS pipe, and inductance is discharged by Schottky tube and LED light at this time,
This discharge time is the demagnetization time, and the port DIM connects MCU or other control equipment, and the port DIM is the case where simulating light modulation
Under, by adjusting the voltage of the port DIM come adjust demagnetization the time, so as to adjust the electric current of LED.PWM waveform is inputted in the port DIM
In the case where, then it is that LED current is adjusted by the duty ratio of input waveform, in the case where the port DIM is hanging, then when demagnetizing
Between determined by the electric current of the voltage and LED light of inductance and LED light.After system start-up, busbar voltage passes through internal high pressure
JFET2 reaches chip interior, and closes after charging to 16V to storage capacitor by VGG generation circuit, and 16V voltage passes through at this time
Low voltage difference LDO module is converted into 5V output, gives MCU or other external system power supplies.When 16V voltage drop is as low as 8V, then JFET2
It opens to capacitor charging, repeatedly.
Finally it should be noted that: the above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof；To the greatest extent
The present invention is described in detail with reference to preferred embodiments for pipe, it should be understood by those ordinary skilled in the art that: still
It can modify to a specific embodiment of the invention or some technical features can be equivalently replaced；Without departing from this hair
The spirit of bright technical solution should all cover within the scope of the technical scheme claimed by the invention.
Claims (5)
1. a kind of modified PWM and DIM dimming driving circuit, it is characterised in that: including LED illumination circuit and light adjusting circuit；Institute
Stating LED illumination circuit includes LED lamp tube and Schottky tube, and the LED lamp tube is also connected with the LC being made of resistance, capacitor and inductance
Oscillating circuit, the Schottky tube, the LED lamp tube and the inductance also constitute demagnetization circuit；The light adjusting circuit includes height
Press that JFET1, that high pressure turns low-voltage module, peak detection block, system control module, drive module, light-adjusting module, dim signal is defeated
Inbound port, drive module and high-voltage MOS pipe；The high pressure turns low-voltage module by the high pressure JFET1 connection busbar voltage, defeated
The operating voltage used out for external equipment or controller；The input terminal of the light-adjusting module passes through the dim signal input terminal
Mouth receives direct current signal and pwm signal, and the output end of the light-adjusting module connects the system control module, the system control
Module controls the grid of the high-voltage MOS pipe by the drive module, and the drain electrode of the high-voltage MOS pipe connects power for illumination all the way
Road, when high-voltage MOS pipe is closed, the inductance in circuit of demagnetizing carries out demagnetization electric discharge；The peak detection block is for detecting high pressure
The source voltage of metal-oxide-semiconductor, the system control module control high pressure by the drive module according to the source voltage detected
The closing of metal-oxide-semiconductor so as to adjust inductive discharge in LED light adjusting circuit peak value.
2. modified PWM according to claim 1 and DIM dimming driving circuit, it is characterised in that: the light adjusting circuit is also
Including high pressure JFET2, under-voltage protective module, VGG generation circuit and low voltage difference LDO module, the input terminal of the VGG generation circuit
By the high pressure JFET2 connection busbar voltage, the output end of the VGG generation circuit is separately connected storage capacitor and described low
Pressure difference LDO module, the low voltage difference LDO module export 5V voltage；The high pressure turns low-voltage module also by the under-voltage protection
Module turns low-voltage module output enable signal EN to the VGG generation circuit and the high pressure.
3. modified PWM according to claim 1 and DIM dimming driving circuit, it is characterised in that: the high pressure turns low pressure
Module includes amplifier U1, metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2, the output end of the amplifier U1 be separately connected the metal-oxide-semiconductor M1 grid and
The grid of the metal-oxide-semiconductor M2, the grid of the metal-oxide-semiconductor M1 also pass sequentially through the drain electrode that switch S1 connects metal-oxide-semiconductor M1 with resistance R3,
The drain electrode of the metal-oxide-semiconductor M1 and the drain electrode of the metal-oxide-semiconductor M2 are separately connected the source electrode of the high pressure JFET1, the metal-oxide-semiconductor M1's
Source electrode passes sequentially through resistance R2 and resistance R1 ground connection, and the source electrode of the metal-oxide-semiconductor M1 also passes sequentially through switch S2 and resistance R4 ground connection,
The source output voltage VDD of metal-oxide-semiconductor M1, the source electrode of metal-oxide-semiconductor M2 provide voltage for drive module；The non-inverting input terminal of amplifier U1 connects
Reference voltage VREF is met, the inverting input terminal of amplifier U1 connects at the tie point of resistance R2 and resistance R1, switch S1 and switch S2
According to enable signal EN open or close.
4. modified PWM according to claim 1 and DIM dimming driving circuit, it is characterised in that: the light-adjusting module packet
Include amplifier U2, logic control conversion circuit, constant-current source I1, current source I2, metal-oxide-semiconductor P1, metal-oxide-semiconductor N1, Schmidt trigger SMT,
Capacitor C1, logic sum gate and logical AND gate, the amplifier U2 pass through logic control according to the gate leakage capacitance electric feed signal of high-voltage MOS pipe
Conversion circuit output demagnetization end signal K processed, the size with light modulation input DIM signal co- controlling current source I2, with control pair
Capacitor C1 charging current, generation time control the shut-in time of signal control high-voltage MOS pipe grid.
5. modified PWM according to claim 1 and DIM dimming driving circuit, it is characterised in that: the VGG generates electricity
Road includes comparator U3, metal-oxide-semiconductor HVP1, metal-oxide-semiconductor HVP2, metal-oxide-semiconductor HVN1, metal-oxide-semiconductor HVN2, metal-oxide-semiconductor HVN3, switch S5, switch
S6, resistance R5, resistance R6 and resistance R7, comparator U3 control the grid of metal-oxide-semiconductor HVN1 and the grid of metal-oxide-semiconductor HVN2, metal-oxide-semiconductor
The drain electrode of HVN1 is separately connected the source electrode of metal-oxide-semiconductor HVP1 and the grid of metal-oxide-semiconductor HVP2, and the drain electrode of metal-oxide-semiconductor HVN2 is separately connected MOS
The drain electrode of the grid and metal-oxide-semiconductor HVP2 of pipe HVP1, the leakage of the source electrode of metal-oxide-semiconductor HVP1, the source electrode of metal-oxide-semiconductor HVP2 and metal-oxide-semiconductor HVN3
Pole is separately connected the source electrode of high pressure JFET2, the drain electrode of the grid connection metal-oxide-semiconductor HVP2 of metal-oxide-semiconductor HVN3, the source electrode of metal-oxide-semiconductor HVN3
Resistance R5, resistance R6 and resistance R7 ground connection are passed sequentially through, the source electrode of metal-oxide-semiconductor HVN3 returns storage capacitor charging, comparator U3's
The inverting input terminal of homophase input single connection reference voltage VREF1, comparator U3 are connected to resistance R6 and resistance by switch S5
At the tie point of R7, the inverting input terminal of comparator U3 also passes through switch S6 and is connected at the tie point of resistance R5 and resistance R6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811278279.4A CN109068454A (en) | 2018-10-30 | 2018-10-30 | Modified PWM and DIM dimming driving circuit |
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| CN201811278279.4A CN109068454A (en) | 2018-10-30 | 2018-10-30 | Modified PWM and DIM dimming driving circuit |
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| CN106604479A (en) * | 2017-01-23 | 2017-04-26 | 无锡恒芯微科技有限公司 | Non-isolated LED dimming circuit with PWM and DIM dimming |
| CN107690213A (en) * | 2017-10-17 | 2018-02-13 | 无锡恒芯微科技有限公司 | Non-isolated low pressure does not flash LED drive circuit |
| CN209562848U (en) * | 2018-10-30 | 2019-10-29 | 无锡恒芯微科技有限公司 | Modified PWM and DIM dimming driving circuit |
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