CN109065736A - A kind of preparation facilities of perovskite light absorption film - Google Patents
A kind of preparation facilities of perovskite light absorption film Download PDFInfo
- Publication number
- CN109065736A CN109065736A CN201810719295.6A CN201810719295A CN109065736A CN 109065736 A CN109065736 A CN 109065736A CN 201810719295 A CN201810719295 A CN 201810719295A CN 109065736 A CN109065736 A CN 109065736A
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- spin coating
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 230000031700 light absorption Effects 0.000 title claims abstract description 20
- 238000004528 spin coating Methods 0.000 claims abstract description 54
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 25
- 239000002243 precursor Substances 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 17
- 238000005070 sampling Methods 0.000 claims description 13
- 239000002390 adhesive tape Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005213 imbibition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to solar cell preparation technology, especially a kind of preparation facilities of perovskite light absorption film.One vacuum device used one end conduit of continous way spin coating liquid of the device extends to be connected in perovskite precursor solution tank, with perovskite precursor solution, and it is interior, corresponding with the sample stage of spin coater which extends to spin coater;Another vacuum device used one end conduit of continous way spin coating liquid is extended in reversed polarity NaOH solution tank NaOH, is connected to reversed polarity solution, which extends to that spin coater is interior, corresponding with the sample stage of spin coater, and spin coating substrate is placed on sample stage;Slidingtype spin coating cover plate is set at the top of spin coater, and the conduit location hole that the vacuum device used conduit of the continous way spin coating liquid is each passed through on slidingtype spin coating cover plate extends in spin coater.It is the configuration of the present invention is simple, low in cost, it is easy to produce and use, it is particularly suitable for preparing perovskite thin film in glove box the continuous preparation, it can be achieved that perovskite thin film.
Description
Technical field
The present invention relates to solar cell preparation technology, the preparation of especially a kind of perovskite light absorption film is filled
It sets.
Background technique
With the aggravation of consumption and the environmental pollution of traditional energy, demand of the people to renewable and clean energy resource is increasingly compeled
It cuts.Solar energy has the advantages such as total amount is big, is easily obtained as a kind of clean energy resource.It, will for various solar utilization techniques
The photovoltaic power generation technology that solar energy is converted into electric energy is always emphasis concerned by people.However, traditional silicon-based photovoltaic cells preparation
The cost is relatively high, and silicon materials production process is seriously polluted, limits its application.Film photovoltaic cell especially perovskite solar energy
Battery is gradually attracted people's attention with cheap cost and easy preparation process.
Perovskite solar cell module mainly includes transparent conductive electrode, electron transfer layer, perovskite light absorbing layer, sky
Cave transport layer and to electrode etc., in perovskite solar battery preparation process, since perovskite light absorbing material is to water and oxygen
Air-sensitive sense, it usually needs operated in inert-atmosphere glove box, process flow is complex, prepared perovskite light absorption film
Yields be in lower range.
Summary of the invention
For the deficiency in existing perovskite thin film technology of preparing, the purpose of the present invention is to provide a kind of easy to operate
Perovskite light absorption film preparation facilities improves working efficiency to simplify the preparation flow of film.
The technical scheme is that
A kind of preparation facilities of perovskite light absorption film, including continous way spin coating liquid is vacuum device used, slidingtype spin coater
Cover board and spin coater, specific structure are as follows:
One vacuum device used one end conduit of continous way spin coating liquid extends in perovskite precursor solution tank and perovskite forerunner
The connection of object solution, it is interior, corresponding with the sample stage of spin coater which extends to spin coater;The rotation of another continous way
The vacuum device used one end conduit of masking liquid extends to be connected in reversed polarity NaOH solution tank NaOH, with reversed polarity solution, which extends to
Spin coater is interior, corresponding with the sample stage of spin coater, and spin coating substrate is placed on sample stage;
Slidingtype spin coating cover plate is set at the top of spin coater, and the vacuum device used conduit of the continous way spin coating liquid is worn respectively
The conduit location hole crossed on slidingtype spin coating cover plate extends in spin coater.
The preparation facilities of the perovskite light absorption film, the suction of continous way spin coating liquid put dress and replace with continous way syringe
Or continous way syringe pump.
The preparation facilities of the perovskite light absorption film, slidingtype spin coating cover plate include cover plate main body, sampling hole,
Sliding block, conduit location hole are provided with sampling hole on cover plate main body, and cover plate main body is equipped with sliding block, is provided with conduit location hole on sliding block,
Conduit passes through conduit location hole and extends in spin coater, and conduit location hole is respectively as follows: perovskite precursor solution hole and reversed polarity is molten
Fluid apertures, spin coating substrate are placed on sample stage by sampling hole.
The preparation facilities of the perovskite light absorption film, it includes three-way valve that continous way spin coating liquid is vacuum device used, is led
Pipe, syringe, three-way valve are connected to syringe, and conduit is installed at the both ends of three-way valve respectively, in which: a three-way valve one
End conduit extends to be connected in perovskite precursor solution tank, with perovskite precursor solution, which stretches
In to spin coater, it is corresponding with spin coater sample stage;Another three-way valve one end conduit extends in reversed polarity NaOH solution tank NaOH and anti-
Polar solvent connection, it is interior, corresponding with spin coater sample stage which extends to spin coater.
The preparation facilities of the perovskite light absorption film further includes protective glue band positioning device, the positioning of protective glue band
Device is equipped with positioning pin and porus positioning plate, opens up dowel hole and substrate location hole, two dowel holes on porus positioning plate
It is opened in the both ends of porus positioning plate respectively, substrate location hole is opened between two dowel holes, and positioning pin is plugged in positioning
In pin hole, substrate is placed in substrate positioning hole.
The preparation facilities of the perovskite light absorption film, the dowel hole in the size and porus positioning plate of positioning pin
Size is identical, and the size of porus positioning plate upper substrate location hole is identical as the size of spin coating substrate;In use, positioning pin is inserted into
In dowel hole, and substrate is put into the substrate positioning hole of porus positioning plate, the edge of protective glue band is directed at positioning pin side
Edge, that realizes protective glue band is accurately pasted on spin coating substrate.
It advantage for present invention and has the beneficial effect that:
The present invention includes that protective glue band positioning device, continous way spin coating liquid is vacuum device used and slidingtype spin coating cover plate,
Its is simple and reasonable for structure, and device is easy to produce and use, low in cost, is particularly suitable for preparing perovskite in glove box thin
Film, it can be achieved that perovskite light absorption film continuous preparation, and work efficiency is high.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is the band positioning device structure schematic diagram of protective glue shown in Fig. 1.
Fig. 3 is the vacuum device used structural schematic diagram of continous way spin coating liquid shown in Fig. 1.
Fig. 4 is slidingtype spin coater covering plate structure schematic diagram shown in Fig. 1.
Fig. 5 is X-ray diffractogram (a), the UV-vis DRS of MAPbI3 type perovskite thin film prepared by embodiment 1
Scheme (b), 50000 times of scanning electron microscope diagrams (c);25000 times of scanning electron microscope diagrams (d);(a) in figure, abscissa
2Theta (degree) is represented the angle of diffraction (degree), and ordinate Intensity (a.u.) represents intensity;(b) in figure, abscissa
Wavelength (nm) is represented wavelength (nanometer), and ordinate Intensity (a.u.) represents intensity.
Drawing reference numeral explanation:
1- protective glue band positioning device, 2- continous way spin coating liquid is vacuum device used, 3- slidingtype spin coating cover plate, 4- spin coating
Machine, 5- perovskite precursor solution tank, 6- reversed polarity NaOH solution tank NaOH, 7- positioning pin, 8- porus positioning plate, 9- three-way valve, 10- are led
Pipe, 11- syringe, 12- cover plate main body, 13- sampling hole, 14- sliding block, 15- conduit location hole, 16- dowel hole, 17- substrate
Location hole, 18- sample stage.
Specific embodiment
The present invention will be further described combined with specific embodiments below, but the present invention is not limited to following embodiments.
As shown in Figure 1, perovskite light absorption film preparation facilities of the invention, specifically includes that protective glue band positioning device
1, continous way spin coating liquid is vacuum device used 2, slidingtype spin coating cover plate 3 and spin coater 4, and specific structure is as follows:
As shown in Fig. 2, protective glue band positioning device 1 includes positioning pin 7 and porus positioning plate 8, opened up on porus positioning plate 8
Dowel hole 16 and substrate location hole 17, two dowel holes 16 are opened in the both ends of porus positioning plate 8, substrate positioning respectively
Hole 17 is opened between two dowel holes 16, and positioning pin 7 is plugged in dowel hole 16, and substrate is placed in substrate location hole 17
It is interior.
The size of positioning pin 7 is identical as 16 size of dowel hole on porus positioning plate 8, and 8 upper substrate of porus positioning plate is fixed
The size in position hole 17 is identical as the size of spin coating substrate.In use, positioning pin 7 is inserted into dowel hole 16, and substrate is put
Enter in the substrate location hole 17 of porus positioning plate 8, the edge of protective glue band is directed at 7 edge of positioning pin, guarantor can be accurately positioned
Retaining tape, so that the accurate stickup of protective glue band is realized, consequently facilitating electrode evaporation.
As shown in figure 3, continous way spin coating liquid vacuum device used 2 includes three-way valve 9, conduit 10, syringe 11, three-way valve
9 both ends are installed by conduit 10 respectively, in which: the conduit 10 of 9 one end of three-way valve extends to perovskite precursor solution tank 5
It is interior, be connected to perovskite precursor solution, the conduit 10 of 9 other end of three-way valve extends in spin coater 4, with spin coater 4
Sample stage 18 is corresponding;The conduit 10 of another 9 one end of three-way valve extends in reversed polarity NaOH solution tank NaOH 6, connects with reversed polarity solution
Logical, it is interior, corresponding with the sample stage 18 of spin coater 4 that the conduit 10 of 9 other end of three-way valve extends to spin coater 4.Three-way valve 9
It is connected to syringe 11, syringe is for absorption and release solution.
In addition, continous way spin coating liquid vacuum device used 2 could alternatively be continous way syringe or continous way syringe pump.
As shown in figure 4, slidingtype spin coating cover plate 3 includes cover plate main body 12, sampling hole 13, sliding block 14, conduit location hole
15, sampling hole 13 is provided on cover plate main body 12, cover plate main body 12 is equipped with sliding block 14, is provided with conduit location hole 15 on sliding block 14,
Conduit 10 passes through conduit location hole 15 and extends in spin coater 4, and conduit location hole 15 is respectively as follows: perovskite precursor solution hole and anti-
Polar solvent hole, spin coating substrate are placed on sample stage 18 by sampling hole 13.
In use, substrate is removed, sliding is passed through after substrate pastes protective glue band by protective glue band positioning device 1
The sampling hole 13 of formula spin coating cover plate 3 is placed on the sample stage 18 of spin coater 4, by the threeway of continous way spin coating liquid vacuum device used 2
Valve 9 is placed in imbibition gear, perovskite precursor solution and reversed polarity solution is drawn respectively with syringe 11, then by triple valve
Door 9 is adjusted to gear is added dropwise, and the sliding block 14 of slidingtype spin coating cover plate 3 is slid into perovskite precursor solution hole location, with note
Emitter 11 discharges perovskite precursor solution and starts spin coater 4, slides the sliding block 14 of slidingtype spin coating cover plate 3 after starting
To reversed polarity solution hole location, and reversed polarity solution is discharged with syringe 11 in the suitable time and rinses substrate, lead to after spin coating
The sampling hole 13 on slidingtype spin coating cover plate 3 is crossed, substrate is taken out and is heat-treated, the perovskite that can be obtained high quality is thin
Film.
Embodiment 1
In the present embodiment, conducting glass substrate is put into the substrate positioning hole of porus positioning plate, it is fixed that positioning pin is inserted into
Then position pin hole takes one section of protective glue band, and is pasted on substrate after its edge is directed at positioning pin edge.
Substrate is removed and separated from porus positioning plate, is then transferred in glove box, is fixed on spin coater
On sample stage.It is molten that the MAPbI3 that 100 μ L concentration are 1.6mol/L is drawn respectively using the vacuum device used conduit of continous way spin coating liquid
Liquid (perovskite precursor solution) and 1.5mL anhydrous ether (reversed polarity solution), mobile sliding block lead perovskite precursor solution
Pipe is directed at substrate center, sets 5000 revs/min for the running parameter of spin coater, time 45s.Release MAPbI3 solution simultaneously starts
Spin coater, then moving sliding block makes reversed polarity solution conduit be directed at substrate center, discharges anhydrous ether after spin coater starting 15s,
Substrate is taken out from sampling hole after spin coating, is placed on 100 DEG C of hot plate after being heat-treated 150s, perovskite thin film can be obtained.
As shown in figure 5, unrestrained using the XRD diffracting spectrum of the MAPbI3 type perovskite thin film of device preparation, UV, visible light
Reflect map and sem analysis result.XRD the result shows that, the device preparation MAPbI3 film be practically free of impurity phase, it is ultraviolet
It can be seen that diffusing reflection spectrum shows that film has very high absorption efficiency in visible region, sem analysis shows the crystal grain of this film
For size in 300nm or so, it is high that film is practically free of hole, crystalline quality.
Above description is explanation of the invention, is not intended to limit the invention, and limited range of the present invention is referring to right
It is required that within protection scope of the present invention, any type of modification can be made.
Claims (6)
1. a kind of preparation facilities of perovskite light absorption film, which is characterized in that, sliding vacuum device used including continous way spin coating liquid
Formula spin coating cover plate and spin coater, specific structure are as follows:
It is interior, molten with perovskite predecessor that one vacuum device used one end conduit of continous way spin coating liquid extends to perovskite precursor solution tank
Liquid connection, it is interior, corresponding with the sample stage of spin coater which extends to spin coater;Another continous way spin coating liquid
Vacuum device used one end conduit extends to be connected in reversed polarity NaOH solution tank NaOH, with reversed polarity solution, which extends to spin coating
Machine is interior, corresponding with the sample stage of spin coater, and spin coating substrate is placed on sample stage;
Slidingtype spin coating cover plate is set at the top of spin coater, and the vacuum device used conduit of the continous way spin coating liquid is each passed through cunning
Conduit location hole on dynamic formula spin coating cover plate extends in spin coater.
2. the preparation facilities of perovskite light absorption film as described in claim 1, which is characterized in that the suction of continous way spin coating liquid is put
Dress replaces with continous way syringe or continous way syringe pump.
3. the preparation facilities of perovskite light absorption film as described in claim 1, which is characterized in that slidingtype spin coating cover plate
Including cover plate main body, sampling hole, sliding block, conduit location hole, sampling hole is provided on cover plate main body, cover plate main body is equipped with sliding block,
Conduit location hole is provided on sliding block, conduit passes through conduit location hole and extends in spin coater, before conduit location hole is respectively as follows: perovskite
It drives object solution hole and reversed polarity solution hole, spin coating substrate is placed on sample stage by sampling hole.
4. the preparation facilities of perovskite light absorption film as described in claim 1, which is characterized in that the suction of continous way spin coating liquid is put
Device includes three-way valve, conduit, syringe, and three-way valve is connected to syringe, and conduit is installed at the both ends of three-way valve respectively,
Wherein: three-way valve one end conduit extends to be connected in perovskite precursor solution tank, with perovskite precursor solution, this three
It is interior, corresponding with spin coater sample stage that port valve door other end conduit extends to spin coater;Another three-way valve one end conduit extends to
It is connected in reversed polarity NaOH solution tank NaOH, with reversed polarity solution, which extends in spin coater and spin coater sample
Platform is corresponding.
5. the preparation facilities of perovskite light absorption film as described in claim 1, which is characterized in that further include that protective glue band is fixed
Position device, protective glue band positioning device are equipped with positioning pin and porus positioning plate, open up dowel hole and substrate on porus positioning plate
Location hole, two dowel holes are opened in the both ends of porus positioning plate respectively, substrate location hole be opened in two dowel holes it
Between, positioning pin is plugged in dowel hole, and substrate is placed in substrate positioning hole.
6. the preparation facilities of perovskite light absorption film as claimed in claim 5, which is characterized in that the size of positioning pin and more
Dowel hole size on the positioning plate of hole is identical, the size and the size phase of spin coating substrate of porus positioning plate upper substrate location hole
Together;In use, positioning pin is inserted into dowel hole, and substrate is put into the substrate positioning hole of porus positioning plate, will protected
The edge of adhesive tape is directed at positioning pin edge, and that realizes protective glue band is accurately pasted on spin coating substrate.
Priority Applications (1)
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CN201810719295.6A CN109065736A (en) | 2018-07-03 | 2018-07-03 | A kind of preparation facilities of perovskite light absorption film |
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CN201810719295.6A CN109065736A (en) | 2018-07-03 | 2018-07-03 | A kind of preparation facilities of perovskite light absorption film |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102211076A (en) * | 2010-04-08 | 2011-10-12 | 东京毅力科创株式会社 | Coating treatment method, program, computer storage medium and coating treatment apparatus |
CN105882120A (en) * | 2016-05-11 | 2016-08-24 | 武汉理工大学 | Printer for perovskite solar cell |
CN107779840A (en) * | 2016-08-25 | 2018-03-09 | 杭州纤纳光电科技有限公司 | The evaporation equipment and its application method of a kind of perovskite thin film and application |
CN207103057U (en) * | 2017-06-02 | 2018-03-16 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film coating apparatus |
CN107812673A (en) * | 2017-10-19 | 2018-03-20 | 苏州协鑫纳米科技有限公司 | The apparatus for coating of perovskite thin film |
CN207340307U (en) * | 2017-11-06 | 2018-05-08 | 广东兴达鸿业电子有限公司 | For the gauge taped |
CN208460805U (en) * | 2018-07-03 | 2019-02-01 | 中国科学院金属研究所 | A kind of preparation facilities of perovskite light absorption film |
-
2018
- 2018-07-03 CN CN201810719295.6A patent/CN109065736A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102211076A (en) * | 2010-04-08 | 2011-10-12 | 东京毅力科创株式会社 | Coating treatment method, program, computer storage medium and coating treatment apparatus |
CN105882120A (en) * | 2016-05-11 | 2016-08-24 | 武汉理工大学 | Printer for perovskite solar cell |
CN107779840A (en) * | 2016-08-25 | 2018-03-09 | 杭州纤纳光电科技有限公司 | The evaporation equipment and its application method of a kind of perovskite thin film and application |
CN207103057U (en) * | 2017-06-02 | 2018-03-16 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film coating apparatus |
CN107812673A (en) * | 2017-10-19 | 2018-03-20 | 苏州协鑫纳米科技有限公司 | The apparatus for coating of perovskite thin film |
CN207340307U (en) * | 2017-11-06 | 2018-05-08 | 广东兴达鸿业电子有限公司 | For the gauge taped |
CN208460805U (en) * | 2018-07-03 | 2019-02-01 | 中国科学院金属研究所 | A kind of preparation facilities of perovskite light absorption film |
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