CN109065442A - A method of it is injected using fluorine ion and realizes induced synthesis 2DHG in gallium nitride - Google Patents
A method of it is injected using fluorine ion and realizes induced synthesis 2DHG in gallium nitride Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 34
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims abstract description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 title claims description 18
- 238000003786 synthesis reaction Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 150000002500 ions Chemical class 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 16
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000004047 hole gas Substances 0.000 abstract description 3
- -1 wherein Substances 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 238000009826 distribution Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- XTLNYNMNUCLWEZ-UHFFFAOYSA-N ethanol;propan-2-one Chemical compound CCO.CC(C)=O XTLNYNMNUCLWEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- Computer Hardware Design (AREA)
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Abstract
Fluorine ion (F is utilized the invention discloses a kind of+) injection method induce in GaN material high concentration removable hole method, form hole quantum well and two-dimensional hole gas (2DHG), realize the efficient p-type doping of GaN material, different from the principle that traditional p is adulterated, this method mainly utilizes F+Strong elecrtonegativity the relative position between valence band and fermi level is adjusted to realize, device architecture includes substrate, N-shaped gallium nitride semiconductor layers (being injected containing fluorine ion) on substrate, wherein, metal electrode is provided on N-shaped gallium nitride semiconductor layers, the present invention utilizes the extremely strong F of ion implanting electronegativity+The 2DHG of high concentration is induced in gallium nitride to provide removable hole, it is compatible with existing silicon technology, inject fluorine ion concentration and depth can accuracy controlling, preparation process is simple, and cost is relatively low.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to one kind is by ion implanting fluorine in semiconductor material with wide forbidden band
The method of inductive formation two-dimensional hole gas in gallium nitride.
Background technique
P-type GaN and AlGaN epitaxial material with high conductivity is all very heavy for various electronics and opto-electronic device
It wants, but since Mg impurity forms the activation efficiency that deep energy level greatly reduces impurity in GaN epitaxy material, in addition heavily doped
The mobility in hole also substantially reduces under the conditions of miscellaneous, causes the conductivity of p-type GaN material that cannot effectively improve always, and
In the higher AlGaN epitaxial material of forbidden bandwidth, the conductivity of p-type material is just lower.Despite the presence of above difficulty, p
The GaN and AlGaN material of type still in photoelectric devices such as laser, solar blind ultraviolet detectors and contain the MOSFET of p-channel
It is applied in power device.With being further increased to device performance requirements, for high conductivity p-type GaN and AlGaN
Demand it is also more more and more urgent.Under this application background, p-type GaN/AlGaN Quantum Well is introduced into the doping for improving Mg
Efficiency, and using the strong spontaneous polarization effect of GaN and AlGaN and piezoelectric polarization caused by Macrolattice mismatch exists between the two
Two-dimensional hole gas (2DHG) is formed at AlGaN/GaN, is greatly enhanced the hole concentration of the AlGaN on surface, is reduced
Surface resistivity, to reduce device contacts resistance.
Selection region doping is very important for preparing high performance electronics, for example can be used to reduce Europe
The contact resistance of nurse electrode and the distribution of optimised devices internal electric field etc..However, growth in situ doping techniques cannot achieve selection
Property region doping.So in order to prepare high performance GaN base device, many researchers are desirable to the side using ion implanting
Method realizes effective p-type doping of GaN material.But, with growth in situ doping problem encountered as, ion implanting Mg by
Ionizing efficiency is still very low after master.2017, U.S. Department of Energy will realize the effective p-type of GaN material using ion implantation technique
Doping and the preparation of high performance GaN base pn-junction are included in one of most important research topic.Based on ion implantation technique in GaN
Induction generates the method for 2DHG compared with the existing method for generating 2DHG using hetero-junctions polarity effect, and preparation process is simple,
And it can be extensive applied to devices, application prospects such as the GaN MOSFET for preparing p-channel with the later period.
Mainstream silicon technology is all made of ion implantation technique and realizes N-shaped and p-type material at present, has benefited from the following of ion implanting
Advantage: 1. pure doping, ion implanting are to carry out in vacuum sealing cavity, while using high-resolution quality analysis
Instrument, it is ensured that inject the uniformity of ion；2. doping concentration is not limited by equilirbium solid solubility, the methods of diffusion institute can achieve
The doping concentration being unable to reach；3. the concentration and depth distribution controllable precise of ion implanting, the ion concentration of injection are decided by tire out
The line of meter, depth distribution are then controlled by acceleration voltage；4. underlayer temperature when injecting ion can unrestricted choice；5. determining range
It is inside uniformly injected into, the beam scanning device in ion implant systems can guarantee there is very high mix in selected areal extent
Miscellaneous uniformity.
Summary of the invention
In order to solve the above technical problems, realizing gallium nitride using fluorine ion injection the object of the present invention is to provide a kind of
The method of induced synthesis two-dimensional electron gas (2DHG) in (gallium nitride, GaN).
The present invention provides a kind of methods injected using fluorine ion and realize induced synthesis 2DHG in GaN, including following step
It is rapid:
S1: a substrate is provided；
S2: N-shaped GaN semiconductor layer is formed over the substrate；
S3: forming metal electrode on the N-shaped GaN semiconductor layer, and the metal electrode is Ni/Au two-layer electrode thickness
For 300nm；
S4: ion source being injected into the selection region of the N-shaped GaN semiconductor layer, and the ion source of injection is F+, energy
For 10keV, implantation dosage is 2 × 1013cm-2, implant angle is positive 7 °.
Further, the selection region of the ion implanting is circle.
Further, the contact surface of the metal electrode and N-shaped GaN semiconductor layer is round, and the face of the contact surface
Product is less than the area of the selection region.
Further, the substrate includes the gallium nitride body substrate of silicon substrate, Sapphire Substrate or other unintentional doping.
Further, the N-shaped GaN semiconductor layer is using MOCVD epitaxy technology growth.
Further, it is formed before metal electrode on the N-shaped GaN semiconductor layer, further includes cleaning step, that is, use
The surface of organic solution and acid-base solution cleaning N-shaped GaN semiconductor layer.
The invention proposes a kind of semiconductor devices that the above method is prepared.
Application of the semiconductor devices being prepared the invention proposes the above method in electronics and opto-electronic device.
According to the above aspect of the present invention, the present invention has at least the following advantages: the present invention is realized in GaN using fluorine ion injection and is induced
2DHG is formed, compatible with existing silicon technology, the concentration and depth distribution of the fluorine ion of injection can be with accuracy controllings, after injection
The GaN semiconductor layer of fluorine ion has very high uniform doping, and preparation process is simple, and cost is relatively low.It is infused using fluorine ion
Enter into GaN the method for induced synthesis 2DHG compared with the method for traditional p-type AlGaN/GaN hetero-junctions polarization 2DHG, avoids
P-type doping, GaN material is high-impedance state after Hall effect test shows ion implanting, and two Ni/Au on the surface GaN are contacted
Electrology characteristic between electrode is then Ohmic contact, this indicates that hole should be distributed in inside depletion width in limited width
And concentration should be very high.
Detailed description of the invention
Fig. 1 is the device architecture section view for realizing induced synthesis 2DHG in GaN in the embodiment of the present invention using fluorine ion injection
Schematic diagram.
Fig. 2 is the energy band schematic diagram of fluorine ion injection front and back.
Fig. 3 compares F+Inject the 1/C to Ni/Au/n-GaN Schottky junction structure2The influence of-V characteristic.
Specific embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and should not be taken as limiting the scope of the invention.
The person that is not specified actual conditions in embodiment, carries out according to conventional conditions or manufacturer's recommended conditions.Agents useful for same
Or production firm person is not specified in instrument, being can be with conventional products that are commercially available.
Embodiment 1
Referring to Fig. 1, a kind of device architecture being injected induced synthesis 2DHG in the GaN realized using fluorine ion is provided first
Substrate 11, substrate 11 can be silicon (silicon, Si) substrate, Sapphire Substrate or the gallium nitride of other unintentional doping
(gallium nitride, GaN) body substrate uses gallium nitride body substrate in the present embodiment.It is MOCVD epitaxy on substrate 11
Ion source 14 is then directly injected into ion implantation technique described by the N-shaped GaN semiconductor layer 12 of technology growth at normal temperature
In the selection region of N-shaped GaN semiconductor layer 12.Ion source is directly injected by GaN table using NV-GSD-HE model ion implantation apparatus
Face, the ion source 14 of injection are F+, energy 10keV, implantation dosage is 2 × 1013cm-2, implant angle is positive 7 °.Ion source 14
Absorbing electronics after stop motion in N-shaped GaN semiconductor layer 12 becomes fluorine anion aggregation zone 15, and ambient absorption hole is formed
2DHG.Wherein, metal electrode 13 is provided on N-shaped GaN semiconductor layer 12, metal electrode 13 is golden (Ni/Au) two-layer electrode of nickel,
With a thickness of 300nm.It is worth noting that device technology start before surface clean be entire technique important component,
It in the adhesiveness of device surface deposit metal or medium and final device property for playing an important role.In spite of
The clean-up performance that the surface GaN reaches atom level cannot be completely secured in the cleaning of machine solution (acetone ethanol etc.) and acid-base solution, but
GaN surface oxide layer can be effectively removed and stained.
In the present embodiment, the cross section of N-shaped GaN semiconductor 12 is circle, and structure design is simple, is easy to implement.At it
In his embodiment, the cross section of N-shaped GaN semiconductor layer 12 can be any shape.
The area of the area ratio metal electrode 13 of the selection region of N-shaped GaN semiconductor 12 as ion implanting is big, guarantees
Each test point of half contact of gold can be effective when later period tests.In the present embodiment, region and the metal electricity of ion implanting are selected
The cross section of pole 13 is concentric circles, and the radius of 13 circular area of metal electrode is less than the circular area in the region of selection ion implanting
Radius.Half contact structures of gold which obtains have excellent performance, are reasonable in design, convenient for preparation.In other embodiments, it selects
The region for selecting ion implanting can be any shape.
The energy size of ion implanting and injection depth have relationship, determine position of the 2DHG in GaN, implantation dosage with
The concentration of the 2DHG of formation is related.It can be required to do suitable parameter configuration according to practical devices, to reach the required position 2DHG
With concentration.
Metal electrode 13 refers to the electrode formed by two kinds of metal materials, and the nickel golden (Ni/Au) that the present embodiment uses is double-deck
Electrode is the electrode formed by Ni metal and Au metal.It illustrates, what half contact of gold here was formed is Schottky contacts,
So the material selection of metal electrode can be selected from the metals such as Ni, Pt, Au, Pd, Co, Cr, Cu, Ag, Al, W or its alloy.It can
It is formed using electron beam evaporation method or magnetron sputtering method, prepares material, preparation method and thickness etc. in schottky metal layer
Parameter is this field routine operation, is not being repeated here.
Fig. 2 is the energy band schematic diagram of fluorine ion injection front and back.Since the surface GaN is there are highdensity donor state before injection,
The fermi level of metal is pinned at conduction band or less 1.48eV, F after injection+After into semiconductor will quickly inside the GaN and
The donor state on surface obtains electronics, causes depletion layer to broaden and moves back pinning (depinning) with fermi level, while ion implanted region
It will be raised upwards due to obtaining electron energy band, and semiconductor surface and differential gap will be to declines, finally due to losing electron energy band
The 2DHG of high concentration will be generated when valence band is close to fermi level, system reaches equilibrium state again.
Fig. 3 compares F+Inject the 1/C to Ni/Au/n-GaN Schottky junction structure2The influence of-V characteristic, it is seen that ion implanting
It is 3.43V that the Built-in potential of device is increased by 1.32V afterwards, and the valence band extreme higher position of GaN has surpassed when further demonstrating that equilibrium state
Fermi level is crossed, hole quantum well structure is formd.
The present invention realizes induced synthesis 2DHG in GaN using fluorine ion injection, and existing Si process compatible, inject fluorine from
Son concentration and depth distribution can accuracy controlling, preparation process is simple, and cost is relatively low.
The present invention has direct relation for high density donor state existing for the formation of 2DHG and GaN material surface and inside
Feature proposes a possible hole Forming Mechanism: 1. before ion implanting, since there are highdensity donor state, gold on the surface GaN
The fermi level of category is pinned at conduction band or less 1.48eV；2. due to extremely strong elecrtonegativity, F+It will be quick after into semiconductor
Inside from GaN and the donor state on surface obtains electronics, causes depletion layer to broaden and moves back pinning (depinning) with fermi level；Together
When, ion implanted region will be raised upwards due to obtaining electron energy band, and semiconductor surface and differential gap are due to losing electron energy band
It will be to decline.Finally, the 2DHG of high concentration will be generated when valence band is close to fermi level, system reaches equilibrium state again.This
The formation for locating 2DHG should be F+Electric charge transfer causes semiconductor that transoid occurs and generates after injection.Since biggish forbidden band is wide
Degree, the rate of heat generation of GaN carrier is extremely slow, so hole can not be from the intrinsic thermal excitation process of semiconductor.According to reality
The hole for testing results presumption 2DHG may be to be passed through provided by tunnelling form as metal.
Although the present invention has been described by way of example and in terms of the preferred embodiments, it is not intended to limit the invention, any to be familiar with this skill
The people of art can do various change and modification, therefore protection model of the invention without departing from the spirit and scope of the present invention
Enclosing subject to the definition of the claims.
Claims (8)
1. a kind of inject the method for realizing induced synthesis 2DHG in gallium nitride using fluorine ion, it is characterised in that: including following step
It is rapid:
S1: a substrate is provided；
S2: N-shaped GaN semiconductor layer is formed over the substrate；
S3: forming metal electrode on the N-shaped GaN semiconductor layer, and the metal electrode is Ni/Au two-layer electrode, with a thickness of
300nm；
S4: ion source being injected into the selection region of the N-shaped GaN semiconductor layer, and the ion source of injection is F+, energy is
10keV, implantation dosage are 2 × 1013cm-2, implant angle is positive 7 °.
2. according to claim 1 inject the method for realizing induced synthesis 2DHG in gallium nitride, feature using fluorine ion
Be: the selection region of the N-shaped GaN semiconductor layer is circle.
3. according to claim 2 inject the method for realizing induced synthesis 2DHG in gallium nitride, feature using fluorine ion
Be: the contact surface of the metal electrode and N-shaped GaN semiconductor layer is circle, and the area of the contact surface is less than the choosing
Select the area in region.
4. according to claim 1 inject the method for realizing induced synthesis 2DHG in gallium nitride, feature using fluorine ion
Be: the substrate includes the gallium nitride body substrate of silicon substrate, Sapphire Substrate or other unintentional doping.
5. according to claim 1 inject the method for realizing induced synthesis 2DHG in gallium nitride, feature using fluorine ion
Be: the N-shaped GaN semiconductor layer is using MOCVD epitaxy technology growth.
6. according to claim 1 inject the method for realizing induced synthesis 2DHG in gallium nitride, feature using fluorine ion
It is: is formed before metal electrode on the N-shaped GaN semiconductor layer, further include cleaning step, that is, uses organic solution and acid
The surface of aqueous slkali cleaning N-shaped GaN semiconductor layer.
7. the semiconductor devices that any one of claim 1-6 the method is prepared.
8. application of the semiconductor devices as claimed in claim 7 in electronics and opto-electronic device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111599865A (en) * | 2020-05-29 | 2020-08-28 | 江南大学 | GaN-based P-channel MOSFET and preparation method thereof |
| CN113437021A (en) * | 2021-07-28 | 2021-09-24 | 广东省科学院半导体研究所 | Preparation method of novel heterojunction of thin film material and thin film prepared by preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579330A (en) * | 2012-07-23 | 2014-02-12 | 三星电子株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
| US9431527B1 (en) * | 2015-07-29 | 2016-08-30 | University Of Electronic Science And Technology Of China | Enhancement mode high electron mobility transistor |
| CN106847934A (en) * | 2017-03-24 | 2017-06-13 | 江南大学 | The gallium nitride PN junction and its manufacture method realized using fluorine ion injection |
| CN107221565A (en) * | 2017-05-23 | 2017-09-29 | 江南大学 | The preparation method of high-gain gallium nitride Schottky diode is realized based on ion implanting fluorine |
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- 2018-07-26 CN CN201810833801.4A patent/CN109065442A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579330A (en) * | 2012-07-23 | 2014-02-12 | 三星电子株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
| US9431527B1 (en) * | 2015-07-29 | 2016-08-30 | University Of Electronic Science And Technology Of China | Enhancement mode high electron mobility transistor |
| CN106847934A (en) * | 2017-03-24 | 2017-06-13 | 江南大学 | The gallium nitride PN junction and its manufacture method realized using fluorine ion injection |
| CN107221565A (en) * | 2017-05-23 | 2017-09-29 | 江南大学 | The preparation method of high-gain gallium nitride Schottky diode is realized based on ion implanting fluorine |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111599865A (en) * | 2020-05-29 | 2020-08-28 | 江南大学 | GaN-based P-channel MOSFET and preparation method thereof |
| CN111599865B (en) * | 2020-05-29 | 2021-08-24 | 江南大学 | GaN-based P-channel MOSFET and preparation method thereof |
| CN113437021A (en) * | 2021-07-28 | 2021-09-24 | 广东省科学院半导体研究所 | Preparation method of novel heterojunction of thin film material and thin film prepared by preparation method |
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